Impedance matcher and plasma generating device

Abstract

The utility model discloses an impedance matcher and a plasma generating device, and relates to the technical field of microelectronics, the impedance matcher is used for the plasma generating device, the device comprises a reaction chamber and a radio frequency signal source, and the radio frequency signal source outputs a first radio frequency signal. The impedance matcher comprises a pre-stage filter circuit, an impedance matching circuit and a feedback circuit, and the pre-stage filter circuit filters the first radio frequency signal and then outputs a corresponding second radio frequency signal; the input end of the impedance matching circuit is connected with the output end of the preceding-stage filter circuit, and the output end is connected with the reaction chamber; after the impedance matching circuit matches the second radio frequency signal, a corresponding third radio frequency signal is generated, and the third radio frequency signal is input into the reaction chamber; the feedback circuit is connected with the pre-stage filter circuit and the reaction chamber, and the feedback circuit is used for detecting the third radio frequency signal and adjusting the pre-stage filter circuit. The technical scheme provided by the utility model aims to improve the integrity and reliability of signals output by the impedance matcher.

Description

Technical Field

[0001] The utility model relates to the technical field of microelectronics, in particular to an impedance matcher and a plasma generating device. Background Art

[0002] In the semiconductor industry, plasma technology utilizes radio frequency (RF) energy to interact with active particles on wafers to achieve surface engineering goals. Currently, impedance matching devices are used in related technologies. The primary purpose of impedance matching devices is to minimize signal reflections, improve energy transmission efficiency, and ensure efficient transfer of RF energy from the power source to the load. If the impedance is mismatched, RF energy will reflect along the transmission path, resulting in energy loss, reduced plasma density and stability, and impacted process accuracy and repeatability. This can also lead to equipment overheating and other reliability issues.

[0003] However, traditional impedance matchers are inefficient in some broadband applications, ultimately resulting in poor signal integrity and reliability. Utility Model Content

[0004] The main purpose of the utility model is to provide an impedance matcher and a plasma generating device, aiming to improve the integrity and reliability of the signal output by the impedance matcher.

[0005] To achieve the above-mentioned object, the utility model proposes an impedance matcher for a plasma generating device, wherein the plasma generating device includes a reaction chamber and a radio frequency signal source, wherein the radio frequency signal source is used to output a first radio frequency signal, and the impedance matcher includes:

[0006] a pre-stage filter circuit, wherein an input end of the pre-stage filter circuit is connected to an output end of the radio frequency signal source, and the pre-stage filter circuit is used to filter the first radio frequency signal and output a corresponding second radio frequency signal;

[0007] an impedance matching circuit, wherein an input end of the impedance matching circuit is connected to an output end of the pre-stage filter circuit, and an output end of the impedance matching circuit is connected to the reaction chamber; after matching the second RF signal, the impedance matching circuit generates a corresponding third RF signal, and inputs the third RF signal into the reaction chamber;

[0008] A feedback circuit is connected to the pre-stage filter circuit and the reaction chamber, and is used to detect the third radio frequency signal and adjust the pre-stage filter circuit.

[0009] Optionally, the pre-stage filtering circuit is a low-pass filtering circuit, configured to filter out signals higher than a first reference frequency.

[0010] Optionally, the low-pass filter circuit includes a first capacitor, a second capacitor, a first inductor and a first resistor;

[0011] The output end of the RF signal source is connected to one end of the first capacitor and the first inductor, the other end of the first capacitor is grounded, and the other end of the first inductor is connected to the second capacitor, the first resistor and one end of the impedance matching circuit; the other end of the second capacitor is grounded, and the other end of the first resistor is grounded.

[0012] Optionally, the pre-stage filtering circuit is a bandpass filtering circuit, configured to filter out signals exceeding a first reference frequency.

[0013] Optionally, the bandpass filter circuit includes a third capacitor, a fourth capacitor, a fifth capacitor, a second inductor, a third inductor, a fourth inductor and a second resistor;

[0014] The output end of the RF signal source is connected to one end of the third capacitor, the fourth capacitor, and the second inductor; the other ends of the third capacitor and the second inductor are commonly grounded, the other end of the fourth capacitor is connected to one end of the third inductor, and the other end of the third inductor is connected to the fifth capacitor, the fourth inductor, the second resistor, and one end of the impedance matching circuit; the fifth capacitor and the fourth inductor are commonly grounded, and the second resistor is grounded.

[0015] Optionally, the bandpass filter circuit includes a sixth capacitor, a seventh capacitor, an eighth capacitor, a fifth inductor, a sixth inductor, a seventh inductor, an eighth inductor and a third resistor;

[0016] The output end of the RF signal source is connected to the first end of the fifth inductor, and the other end of the fifth inductor is connected to the sixth capacitor, the seventh capacitor, and one end of the sixth inductor; the other ends of the sixth capacitor and the sixth inductor are commonly grounded, the other end of the seventh capacitor is connected to one end of the seventh inductor, and the other end of the seventh inductor is connected to the eighth capacitor, the eighth inductor, the third resistor, and one end of the impedance matching circuit; the eighth capacitor and the eighth inductor are commonly grounded, and the third resistor is grounded.

[0017] Optionally, the feedback circuit includes:

[0018] a detection unit, connected to the reaction chamber, and configured to detect the third radio frequency signal;

[0019] a comparing unit, connected to the detecting unit, and configured to compare the second radio frequency signal with the third radio frequency signal;

[0020] A control unit is connected to the comparison unit and the pre-stage filter circuit, and is used to adjust the pre-stage filter circuit according to the comparison result.

[0021] Optionally, the front-stage filter circuit includes a tunable reactor, and the tunable reactor is used to perform dynamic adjustment according to the plasma parameters detected by the feedback circuit.

[0022] The utility model also provides a plasma generating device, comprising a reaction chamber, a radio frequency signal source and the impedance matching device as described above.

[0023] The technical solution of the present invention improves the signal integrity and reliability by adopting an impedance matcher, thereby improving the performance of the plasma generating device. First, the pre-stage filter circuit improves the quality of the input signal and enhances the reliability of the signal by eliminating interference and noise. Secondly, the impedance matching circuit realizes the optimal power transmission between the signal and the reaction chamber, reduces energy loss, and improves the efficiency of the plasma generation process. Finally, the feedback circuit, as the core of the closed-loop control, detects and corrects the signal deviation in real time, ensuring the high performance and high reliability of the entire system in broadband applications. Through the coordinated work of the above three circuits, the signal integrity and reliability of the impedance matcher are greatly improved, thereby improving the performance of the plasma generating device, reducing production costs, and improving the yield and speed of semiconductor manufacturing. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the structures shown in these drawings without paying any creative work.

[0025] Figure 1 A schematic diagram of an embodiment of an impedance matching device provided by the present invention;

[0026] Figure 2 A schematic diagram of a first embodiment of a pre-stage filter circuit provided by the present utility model;

[0027] Figure 3 A schematic diagram of a second embodiment of a pre-stage filter circuit provided by the present utility model;

[0028] Figure 4 This is a schematic diagram of a third embodiment of the pre-stage filter circuit provided by the present utility model.

[0029] Description of Figure Numbers:

[0030] 1. Pre-stage filter circuit; 2. Impedance matching circuit; 3. Feedback circuit.

[0031] The realization of the purpose, functional features and advantages of the present invention will be further explained in conjunction with embodiments and with reference to the accompanying drawings. DETAILED DESCRIPTION

[0032] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0033] It should be noted that if the embodiments of the present invention involve directional indications (such as up, down, left, right, front, back, etc.), such directional indications are only used to explain the relative position relationship, movement status, etc. between the various components in a certain specific posture. If the specific posture changes, the directional indication will also change accordingly.

[0034] In addition, if there are descriptions involving "first", "second", etc. in the embodiments of the present invention, the descriptions of "first", "second", etc. are only for descriptive purposes and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features limited to "first" and "second" may explicitly or implicitly include at least one of such features. In addition, if "and / or" or "and / or" appears in the full text, its meaning includes three parallel schemes. Taking "A and / or B" as an example, it includes scheme A, or scheme B, or a scheme in which A and B are satisfied at the same time. In addition, the technical solutions between the various embodiments can be combined with each other, but it must be based on the ability of ordinary technicians in this field to implement. When the combination of technical solutions is mutually contradictory or cannot be implemented, it should be deemed that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0035] In semiconductor manufacturing, plasma technology is a key enabler for material deposition, etching, cleaning, and modification. This process involves generating plasma using radio frequency (RF) energy, which is converted into ions, free electrons, and reactive chemical species within the plasma. These particles interact with the wafer surface, enabling highly controllable micro- and nanoscale processing. However, efficient and uniform transfer of RF energy to the plasma requires impedance matching.

[0036] The primary purpose of an impedance matcher is to minimize signal reflections, improve energy transmission efficiency, and ensure efficient transfer of RF energy from the power source to the load (in this case, the plasma). If the impedance is mismatched, RF energy will reflect along the transmission path, causing energy loss, reducing plasma density and stability, and affecting process accuracy and repeatability. It can also lead to equipment overheating and other reliability issues.

[0037] Currently, although impedance matching boxes are used in related technologies, traditional impedance matching boxes have low efficiency in some broadband applications, ultimately resulting in low signal integrity and reliability.

[0038] To alleviate the above problem, this embodiment proposes an impedance matcher, which is used in a plasma generating device. It can be understood that the plasma generating device includes a reaction chamber and a radio frequency signal source, and the radio frequency signal source is used to output a first radio frequency signal.

[0039] like Figure 1 As shown, the impedance matching device includes a pre-stage filter circuit 1, an impedance matching circuit 2 and a feedback circuit 3.

[0040] In this embodiment, the input end of the pre-stage filter circuit 1 is connected to the output end of the RF signal source, and the pre-stage filter circuit 1 is used to filter the above-mentioned first RF signal and output a corresponding second RF signal; the second RF signal is a RF signal generated after the pre-stage filter circuit 1 filters the first RF signal, thereby improving the reliability of the RF signal.

[0041] The pre-stage filter circuit 1 can use an RLC (resistance, inductance, and capacitance) combination to form any one or more of a low-pass filter, a high-pass filter, a band-pass filter, and a band-stop filter. For example, a simple low-pass filter can be composed of an inductor and a capacitor in series to block high-frequency noise. The specific structure of the pre-stage filter circuit 1 used depends on the actual situation.

[0042] In this embodiment, the input end of impedance matching circuit 2 is connected to the output end of pre-stage filter circuit 1, and the output end of impedance matching circuit 2 is connected to the reaction chamber. After matching the second RF signal, impedance matching circuit 2 generates a corresponding third RF signal, and inputs the third RF signal into the reaction chamber. Impedance matching circuit 2 is used to adjust the second RF signal so that it can be effectively transmitted to the reaction chamber. Specifically, it compensates for changes in the load impedance of the reaction chamber to achieve optimal power transmission and minimize reflections, and outputs the third RF signal.

[0043] The impedance matching circuit 2 may include one or both of an adjustable inductor and an adjustable capacitor. By varying the inductor and capacitor values, the circuit's impedance characteristics can be adjusted to accommodate changes in load impedance. The impedance matching circuit 2 may also be a π-type or T-type matching network, depending on the application.

[0044] In this embodiment, feedback circuit 3 connects pre-filter circuit 1 and the reaction chamber. Feedback circuit 3 detects the third RF signal and adjusts pre-filter circuit 1. This is a closed-loop control mechanism that detects the third RF signal (i.e., the signal reaching the reaction chamber) and adjusts pre-filter circuit 1 as needed. This allows for real-time optimization of signal quality and system performance.

[0045] The feedback circuit 3 may include any one or more of a sensor, amplifier, controller, or adjustable element, and the entire feedback loop may be analog or digital. Specifically, in the feedback circuit 3, sensors detect key parameters in the plasma reaction chamber, such as power, voltage, current, or impedance. The detected data is then compared with a predetermined threshold or target value to determine whether adjustment is required. If a deviation is detected, the feedback circuit 3 issues a command to adjust the parameters of the pre-stage filter circuit 1 and / or the impedance matching circuit 2 to optimize signal transmission.

[0046] It should be explained that this embodiment does not limit the specific structures of the pre-stage filter circuit 1, the impedance matching circuit 2, and the feedback circuit 3. What is important is that in this embodiment, the pre-stage filter circuit 1 is used to reduce noise and unnecessary frequency components, and the feedback circuit 3 cooperates with the pre-stage filter circuit 1 to timely detect and optimize the output signal quality, thereby ensuring the effectiveness and stability of the RF energy during the plasma generation process.

[0047] In actual applications, when the plasma generating device is started, the RF power supply begins to deliver energy to the reaction chamber. At this time, the impedance matcher comes into play. First, the pre-stage filter circuit 1 receives the first RF signal from the RF signal source, and through filtering, effectively removes the stray components in the signal and outputs a purer second RF signal. Subsequently, the impedance matching circuit 2 receives the second RF signal and dynamically adjusts the signal based on the actual impedance characteristics of the reaction chamber to ensure the optimization of energy transmission. The generated third RF signal not only has high power transmission efficiency, but also has extremely low reflection loss, thereby significantly improving the efficiency and quality of plasma generation. Throughout the process, the feedback circuit 3 continuously monitors the state of the third RF signal in the reaction chamber. Once signal distortion or impedance mismatch is detected, it can respond quickly and adjust the working parameters of the pre-stage filter circuit 1 to form a closed-loop control system to ensure signal integrity and system stability.

[0048] In summary, the impedance matcher can improve signal integrity and reliability, thereby improving the performance of the plasma generating device. First, the pre-stage filter circuit 1 improves the quality of the input signal and enhances the reliability of the signal by eliminating interference and noise. Secondly, the impedance matching circuit 2 achieves optimal power transmission between the signal and the reaction chamber, reduces energy loss, and improves the efficiency of the plasma generation process. Finally, the feedback circuit 3, as the core of the closed-loop control, detects and corrects signal deviations in real time, ensuring the high performance and high reliability of the entire system in broadband applications. Through the coordinated work of these three circuits, the signal integrity and reliability of the impedance matcher are greatly improved, thereby improving the performance of the plasma generating device, reducing production costs, and improving the yield and speed of semiconductor manufacturing.

[0049] Optionally, the pre-stage filter circuit 1 is a low-pass filter circuit for filtering out signals higher than the first reference frequency. The design goal of the low-pass filter circuit is to allow signals within a specific frequency range to pass through without attenuation while effectively suppressing high-frequency signals higher than the cutoff frequency.

[0050] It's important to explain that the first reference frequency typically refers to a base frequency point set within the system. In a plasma generation system, the first reference frequency may be the most effective excitation frequency for the plasma reaction chamber, or the center frequency of the RF power output. The choice of this frequency is often based on the properties of the plasma, the characteristics of the material, and the process requirements. For example, in semiconductor manufacturing, a plasma process may require the use of 60 MHz, 13.56 MHz, or other specific frequencies to achieve optimal material deposition or etching results.

[0051] As you can see, the low-pass filter ensures that only the desired RF signal enters the subsequent impedance matching system and ultimately the reaction chamber. The purity of the RF signal is directly related to plasma quality and its performance in the semiconductor manufacturing process. By eliminating unnecessary high-frequency noise and interference, the low-pass filter ensures stable and controllable plasma generation.

[0052] Furthermore, low-pass filtering helps protect the entire plasma generation system from potential damage caused by high-frequency signals. In the RF field, excessively high frequencies can cause equipment overheating, signal distortion, and even hardware failure. By limiting the maximum signal frequency, low-pass filtering ensures safe system operation while maintaining energy efficiency and long-term reliability.

[0053] Thus, the low-pass filter structure used in pre-stage filter circuit 1 can simultaneously ensure signal integrity and system stability. The low-pass filter not only provides high-quality RF signals for plasma generation, but also effectively protects against high-frequency noise, thus creating an ideal working environment for plasma processes in semiconductor manufacturing.

[0054] Optional, such as Figure 2 As shown, the low-pass filter circuit includes a first capacitor C1, a first capacitor C2, a first inductor L1 and a first resistor R1; the output end of the RF signal source is connected to the first capacitor C1 and one end of the first inductor L1, the other end of the first capacitor C1 is grounded, and the other end of the first inductor L1 is connected to the first capacitor C2, the first resistor R1 and one end of the impedance matching circuit 2; the other end of the first capacitor C2 is grounded, and the other end of the first resistor R1 is grounded.

[0055] As the first end of the radio frequency signal processing link of the plasma generating device, the low-pass filter circuit adopts a π-type low-pass filter structure design, which may include a first capacitor C1, a first capacitor C2, a first inductor L1 and a first resistor R1. The output end of the radio frequency signal source is directly coupled to the first capacitor C1 and one end of the first inductor L1, and the other end of the first capacitor C1 is grounded to ensure that high-frequency noise is effectively shielded, while the other end of the first inductor L1 is connected to the second capacitor C2, the first resistor R1 and one end of the impedance matching circuit 2, and the other end of the second capacitor C2 is also grounded. Under this configuration, the first inductor L1 and the second capacitor C2 form a series resonant circuit, which can accurately control the frequency response of the signal, significantly reduce the high-frequency components above the cutoff frequency, and allow signals below the cutoff frequency to pass smoothly. The presence of the first resistor R1 not only helps to set the quality factor of the filter, but also determines the output impedance of the filter to a certain extent, ensuring the efficiency and stability of signal transmission. The entire low-pass filter circuit is designed to provide high-quality RF signals, laying a solid foundation for subsequent impedance matching and plasma generation processes. At the same time, its effective suppression of high-frequency noise also makes an important contribution to the overall performance and reliability of the system.

[0056] Optionally, the pre-stage filter circuit 1 is a bandpass filter circuit for filtering out signals outside the first reference frequency range. The pre-stage filter circuit 1 takes the form of a bandpass filter, which is used to screen out a specific frequency range in the RF signal and remove frequency components outside this range. This effectively isolates and transmits signals within the specific frequency range while significantly attenuating noise at both the low-frequency and high-frequency ends.

[0057] It should be explained that the first reference frequency range can be a frequency interval around the first reference frequency, defining the frequency span in which the system can effectively operate. It can be determined based on the need to cover multiple frequencies in actual operation to adapt to different process conditions or materials, or it can be determined by the frequency response characteristics of the system itself. For example, in a plasma process, in order to adapt to the reaction characteristics of different gases or to optimize the process window, the system may need to adjust the frequency within a certain range, such as operating within a range of ±1 MHz based on 13.56 MHz.

[0058] During the plasma generation process, the use of a bandpass filter circuit can ensure the precise focusing of the RF energy, avoiding unnecessary energy waste and potential interference problems. It can effectively improve the purity of the signal and ensure the stability and efficiency of plasma generation. It also helps protect the system from external noise and internal stray signals, thereby providing important guarantees for the performance and reliability of the entire plasma generation device.

[0059] Optional, such as Figure 3 As shown, the bandpass filter circuit includes a third capacitor C3, a fourth capacitor C4, a fifth capacitor C5, a second inductor L2, a third inductor L3, a fourth inductor L4 and a second resistor R2;

[0060] The output end of the RF signal source is connected to the third capacitor C3, the fourth capacitor C4, and one end of the second inductor L2; the other ends of the third capacitor C3 and the second inductor L2 are commonly grounded, the other end of the fourth capacitor C4 is connected to one end of the third inductor L3, and the other end of the third inductor L3 is connected to the fifth capacitor C5, the fourth inductor L4, the second resistor R2, and one end of the impedance matching circuit 2; the fifth capacitor C5 and the fourth inductor L4 are commonly grounded, and the second resistor R2 is grounded.

[0061] Optional, such as Figure 4 As shown, the band-pass filter circuit includes a sixth capacitor C6, a seventh capacitor C7, an eighth capacitor C8, a fifth inductor L5, a sixth inductor L6, a seventh inductor L7, an eighth inductor L8 and a third resistor R3;

[0062] The output end of the RF signal source is connected to the first end of the fifth inductor L5, and the other end of the fifth inductor L5 is connected to the sixth capacitor C6, the seventh capacitor C7, and one end of the sixth inductor L6; the sixth capacitor C6 and the other end of the sixth inductor L6 are commonly grounded, the other end of the seventh capacitor C7 is connected to one end of the seventh inductor L7, and the other end of the seventh inductor L7 is connected to the eighth capacitor C8, the eighth inductor L8, the third resistor R3, and one end of the impedance matching circuit 2; the eighth capacitor C8 and the eighth inductor L8 are commonly grounded, and the third resistor R3 is grounded.

[0063] As can be understood, the series and parallel connection of multi-stage LC networks precisely regulates the signal's frequency response, ensuring that only RF signals falling within a specific frequency band pass smoothly while other frequency components are effectively attenuated. This optimizes signal purity, improves energy conversion efficiency during plasma generation, and provides a stable and reliable RF energy foundation for surface engineering in semiconductor manufacturing processes.

[0064] like Figure 3 The bandpass filter circuit shown can be matched to the real part of the load impedance, and Figure 4 The bandpass filter circuit shown is more convenient for comprehensive matching of load impedance, including its real and imaginary parts. Figure 4 The bandpass filter circuit shown is compared to Figure 3 The bandpass filter circuit shown in the figure has an additional inductor, namely the fifth inductor L5. In this way, the circuit can be converted into a step impedance matching network. By equating the capacitor and inductor to low-impedance and high-impedance transmission lines, respectively, not only the circuit integration is improved, but also the impedance matching capability and signal transmission efficiency in broadband applications are significantly enhanced.

[0065] Optionally, the feedback circuit 3 includes a detection unit, a comparison unit and a control unit, the detection unit is connected to the reaction chamber and is used to detect the third RF signal; the comparison unit is connected to the detection unit and is used to compare the second RF signal and the third RF signal; the control unit is connected to the comparison unit and the pre-stage filter circuit 1 and is used to adjust the pre-stage filter circuit 1 according to the comparison result.

[0066] It can be understood that the feedback circuit 3 serves as a closed-loop control mechanism in the radio frequency signal processing link of the plasma generating device. Its structure can include three parts: a detection unit, a comparison unit and a control unit. It is intended to monitor the signal quality and system performance in real time, and dynamically adjust the working state of the pre-stage filter circuit 1 according to the detection results to maintain the efficiency and reliability of signal transmission.

[0067] The detection unit is directly connected to the reaction chamber and is used to continuously monitor the third RF signal flowing into the reaction chamber, obtaining real-time status information of the signal, including but not limited to key parameters such as signal strength, frequency characteristics, and phase changes. Through accurate signal detection, the detection unit provides basic data support for subsequent feedback control.

[0068] The comparison unit receives the third RF signal data from the detection unit and compares and analyzes it with the second RF signal output by the pre-filter circuit 1. The comparison unit's task is to identify any unexpected changes in the signal during transmission, such as signal attenuation, phase shift, or frequency drift. These changes may indicate impedance mismatch or other system anomalies. Through real-time comparison, the comparison unit can quickly identify the degree of deviation in signal quality, providing a basis for further control decisions.

[0069] The control unit, the central nervous system of feedback circuit 3, receives signal deviation information from the comparison unit and is closely connected to the pre-stage filter circuit 1. Based on the comparison results, the control unit intelligently adjusts the filter circuit parameters, such as changing the capacitance, inductance, or resistance values, to compensate for the detected signal deviation and thus restore signal integrity. This ensures that the system can always maintain optimal signal transmission under changing load conditions, effectively improving the performance and stability of the plasma generation device.

[0070] In summary, the feedback circuit 3 realizes real-time detection and intelligent adjustment of the RF signal processing of the plasma generating device through the detection, comparison and control mechanisms, ensuring high-quality transmission of the signal in a broadband application environment.

[0071] Optionally, the pre-stage filter circuit 1 includes a tunable reactor, which is used to perform dynamic adjustment according to the plasma parameters detected by the feedback circuit 3 .

[0072] It is understandable that the pre-stage filter circuit 1 includes a tunable inductor. As a dynamic adjustment element, the core function of the tunable inductor is to be able to intelligently adjust its own reactance characteristics according to the changes in plasma parameters detected in real time by the feedback circuit 3, so as to achieve precise control and optimization of the RF signal. Specifically, when the feedback circuit 3 detects fluctuations in the plasma state in the reaction chamber, such as changes in plasma density, temperature or pressure, slight changes in these parameters will affect the load impedance, thereby affecting the transmission efficiency of the RF signal. At this time, the tunable inductor can quickly respond to these changes, and dynamically compensate for changes in the load impedance by adjusting its own inductance or capacitance value, ensuring that the RF signal and the reaction chamber always maintain the best matching state. In this way, the flexibility and adaptability of the plasma generating device are significantly improved, the utilization efficiency of the RF energy is greatly optimized, and energy loss and signal reflection are reduced, thereby improving the stability and controllability of plasma generation.

[0073] The present invention also includes a plasma generating device comprising a reaction chamber, a radio frequency signal source, and the impedance matching device described above. It should be noted that since the plasma generating device includes the impedance matching device, the specific structure of the impedance matching device is similar to that of the aforementioned embodiments. Since the present plasma generating device utilizes all the technical solutions of all the aforementioned embodiments, it at least possesses all the beneficial effects brought about by the technical solutions of the aforementioned embodiments, and therefore, no further elaboration is required here.

[0074] Combined with the impedance matcher described above, it is applied to the plasma generation device, which can significantly improve the efficiency and quality of the semiconductor manufacturing process. Specifically, this impedance matching solution can ensure that the RF energy is more efficiently and evenly transmitted to the plasma reaction chamber, reducing energy loss and signal reflection, thereby improving the density and stability of the plasma. Through the noise suppression and frequency optimization of the pre-stage filter circuit 1, and the closed-loop control of the feedback circuit 3, the entire system can detect and adjust in real time, and even in the face of complex and changing process conditions, it can maintain the integrity of the signal and the reliability of the system performance. In practical applications, this impedance matcher can adapt to a variety of RF frequencies, including the commonly used 60 MHz, 13.56 MHz, etc., making the plasma generation device more versatile and adaptable, and able to flexibly respond to different process requirements and material properties, whether it is depositing thin films, etching patterns or surface modification, it can obtain better process effects.

[0075] In summary, this embodiment significantly improves the signal integrity and reliability of the impedance matcher by adopting the impedance matcher including the pre-stage filter circuit 1, the impedance matching circuit 2 and the feedback circuit 3, thereby improving the performance of the plasma generating device and enhancing the production efficiency and production quality of the plasma generating device.

[0076] The above description is merely an exemplary embodiment of the present invention and does not limit the patent scope of the present invention. All equivalent structural transformations made using the contents of the present invention specification and drawings under the technical concept of the present invention, or direct / indirect application in other related technical fields are included in the patent protection scope of the present invention.

Claims

1. An impedance matching box, characterized in that: Used in a plasma generating device, the plasma generating device includes a reaction chamber and a radio frequency signal source, the radio frequency signal source is used to output a first radio frequency signal, and the impedance matching device includes: a pre-stage filter circuit, wherein an input end of the pre-stage filter circuit is connected to an output end of the radio frequency signal source, and the pre-stage filter circuit is used to filter the first radio frequency signal and output a corresponding second radio frequency signal; an impedance matching circuit, wherein an input end of the impedance matching circuit is connected to an output end of the pre-stage filter circuit, and an output end of the impedance matching circuit is connected to the reaction chamber; after matching the second RF signal, the impedance matching circuit generates a corresponding third RF signal, and inputs the third RF signal into the reaction chamber; A feedback circuit is connected to the pre-stage filter circuit and the reaction chamber, and is used to detect the third radio frequency signal and adjust the pre-stage filter circuit.

2. The impedance matching box according to claim 1, wherein: The pre-stage filtering circuit is a low-pass filtering circuit, which is used to filter out signals with a frequency higher than a first reference frequency.

3. The impedance matching box according to claim 2, wherein: The low-pass filter circuit includes a first capacitor, a second capacitor, a first inductor and a first resistor; The output end of the RF signal source is connected to one end of the first capacitor and the first inductor, the other end of the first capacitor is grounded, and the other end of the first inductor is connected to the second capacitor, the first resistor and one end of the impedance matching circuit; the other end of the second capacitor is grounded, and the other end of the first resistor is grounded.

4. The impedance matching box according to claim 1, wherein: The pre-stage filter circuit is a bandpass filter circuit, which is used to filter out signals that exceed a first reference frequency range.

5. The impedance matching box according to claim 4, wherein: The bandpass filter circuit includes a third capacitor, a fourth capacitor, a fifth capacitor, a second inductor, a third inductor, a fourth inductor and a second resistor; The output end of the RF signal source is connected to one end of the third capacitor, the fourth capacitor, and the second inductor; the other ends of the third capacitor and the second inductor are commonly grounded, the other end of the fourth capacitor is connected to one end of the third inductor, and the other end of the third inductor is connected to the fifth capacitor, the fourth inductor, the second resistor, and one end of the impedance matching circuit; the fifth capacitor and the fourth inductor are commonly grounded, and the second resistor is grounded.

6. The impedance matching box according to claim 4, wherein: The bandpass filter circuit includes a sixth capacitor, a seventh capacitor, an eighth capacitor, a fifth inductor, a sixth inductor, a seventh inductor, an eighth inductor and a third resistor; The output end of the RF signal source is connected to the first end of the fifth inductor, and the other end of the fifth inductor is connected to the sixth capacitor, the seventh capacitor, and one end of the sixth inductor; the other ends of the sixth capacitor and the sixth inductor are commonly grounded, the other end of the seventh capacitor is connected to one end of the seventh inductor, and the other end of the seventh inductor is connected to the eighth capacitor, the eighth inductor, the third resistor, and one end of the impedance matching circuit; the eighth capacitor and the eighth inductor are commonly grounded, and the third resistor is grounded.

7. The impedance matching box according to claim 1, wherein: The feedback circuit comprises: a detection unit, connected to the reaction chamber, and configured to detect the third radio frequency signal; a comparing unit, connected to the detecting unit, and configured to compare the second radio frequency signal with the third radio frequency signal; A control unit is connected to the comparison unit and the pre-stage filter circuit, and is used to adjust the pre-stage filter circuit according to the comparison result.

8. The impedance matching box according to any one of claims 1 to 7, wherein: The front-stage filter circuit includes a tunable reactor, and the tunable reactor is used to perform dynamic adjustment according to the plasma parameters detected by the feedback circuit.

9. A plasma generating device, characterized in that: It comprises a reaction chamber, a radio frequency signal source and the impedance matching device according to any one of claims 1 to 8.

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