Vapor deposition equipment and semiconductor processing system
By introducing a base, central shielding part, shielding ring and driving structure into the vapor deposition equipment, the automatic adjustment of the shielding ring is achieved, solving the problem that existing equipment needs to shut down and replace the shielding ring, improving work efficiency and saving manpower.
Patent Information
- Application Number
- CN202422605688.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-28
- Publication Date
- 2025-08-22
- Estimated Expiration
- 2034-10-28
AI Technical Summary
Existing vapor deposition equipment needs to shut down and replace the shielding ring when compensating for the collapse of wafer edge profiles of different sizes, resulting in waste of working time and labor.
A vapor deposition device is designed, including a base, a central shading part, a shielding ring and a driving structure. The position of the shielding ring is automatically adjusted through the driving structure to achieve automatic compensation of the collapsed areas of different edge profiles.
Improve work efficiency, save manpower, reduce equipment downtime, and realize automatic adjustment according to the edge profile of different substrates.
Smart Images
Figure CN223255416U_ABST
Abstract
Description
Technical Field
[0001] The utility model belongs to the technical field of semiconductor manufacturing, and more specifically, relates to a vapor deposition device and a semiconductor processing system. Background Art
[0002] In the 3DIC process, multiple wafer stacking and bonding processes are involved. Some products often cause varying degrees of wafer edge profile collapse due to the groove structure involved in the front wafer and the different process edge washing widths (PH edge washing / ECP edge washing). If this collapse is too severe, the wafer edge profile flatness requirements cannot be met during subsequent normal CVD film deposition and CMP polishing repair, which requires the introduction of an edge deposition process. Because the edge profile collapse morphology of different products is different, in order to compensate for edge areas of different sizes, edge deposition shielding rings of different sizes are required in the edge deposition process. For example, the current outer contour sizes of edge deposition shielding rings are 292.5mm, 294.5mm, 295.5mm, and 297.5mm, which are used to deposit and compensate for 3.75mm, 2.75mm, 2.25mm, and 1.25mm edge profile collapses, respectively.
[0003] In the wafer edge deposition process, the wafer edge profile depends on the size of the edge deposition shielding ring. Because different wafer products have different edge profile morphology requirements, in order to compensate for edge areas of different sizes, it is necessary to stop the machine to cool down and manually replace the shielding ring. After replacing the shielding ring, the deposition equipment needs to be debugged, wasting a lot of working time and manpower. Utility Model Content
[0004] The purpose of the utility model is to provide a vapor deposition device and a semiconductor processing system, wherein the vapor deposition device can automatically adjust the positions of different shielding rings to deposit and compensate for the collapsed areas of different edge contours of the wafer, thereby saving working time and manpower and improving work efficiency.
[0005] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is as follows: In a first aspect, the present invention provides a vapor deposition device, comprising:
[0006] a base for supporting a substrate;
[0007] a central shielding portion, disposed above the base and configured to shield the middle portion of the substrate;
[0008] At least one shielding ring, configured to be nested in the edge of the central shielding portion and cooperate with the central shielding portion to deposit an edge thin film layer within a preset range at the edge of the substrate;
[0009] A driving structure is provided in a one-to-one correspondence with the shielding ring, and the driving structure is used to drive the shielding ring to move toward or away from the central shielding portion.
[0010] In one embodiment, the outer contour of the central shielding portion is circular, and the shielding ring is annular.
[0011] In one embodiment, the driving structure is a cylinder, the cylinder includes a cylinder barrel and a piston rod, and the shielding ring is fixedly connected to the piston rod of the cylinder.
[0012] In one embodiment, the vapor deposition equipment includes a first shielding ring, a second shielding ring, and a third shielding ring nested in sequence from the inside to the outside, and a first cylinder, a second cylinder, and a third cylinder for driving the three shielding rings respectively. The three cylinders each include a cylinder barrel and a piston rod connected to the cylinder barrel. The three piston rods are all hollow structures. The piston rod of the first cylinder is located in the hollow structure of the piston rod of the second cylinder, and the piston rod of the second cylinder is located in the hollow structure of the piston rod of the third cylinder.
[0013] In one embodiment, the radius of the central shielding portion is 100 mm-145 mm.
[0014] In one embodiment, the widths of the three shielding rings along the radial direction are all 1.00 mm to 1.50 mm.
[0015] In one embodiment, a controller is further included, and the controller is electrically connected to the driving structure.
[0016] In one embodiment, the central shielding portion has a plurality of axially penetrating through holes; the through holes near the center of the central shielding portion are straight holes, and the through holes near the edge of the central shielding portion are inclined holes inclined toward the edge.
[0017] In one embodiment, a gas introduction unit is further included, wherein the gas introduction unit is used to supply reaction gas from above the substrate toward the outside of the shielding ring, and the gas introduction unit is also used to supply inert gas from the through hole toward the substrate.
[0018] A second aspect of the present invention provides a semiconductor processing system, comprising the vapor deposition apparatus as described above.
[0019] The vapor deposition equipment provided by the present invention includes a base, a central shielding part, at least one shielding ring and a driving structure. The base is used to carry a substrate. The central shielding part is arranged above the base and is used to shield the middle part of the substrate. The shielding ring is used to be nested in the edge of the central shielding part and cooperate with the central shielding part to deposit an edge thin film layer of a preset range on the edge of the substrate. The driving structure and the shielding ring are arranged in a one-to-one correspondence. The driving structure is used to drive the shielding ring to move toward or away from the central shielding part. The shielding ring of the vapor deposition equipment can be driven by the driving structure to move toward or away from the central shielding part. When the shielding ring moves toward the central shielding part and is nested in the edge of the central shielding part, the edge thin film layer of a preset range can be deposited on the edge of the substrate. The deposition equipment can automatically adjust the range of the edge deposition thin film layer according to the edge profile morphology requirements of different substrates, thereby improving work efficiency and saving manpower. BRIEF DESCRIPTION OF THE DRAWINGS
[0020] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0021] Figure 1 A front view of a vapor deposition apparatus provided by an embodiment of the present invention, wherein arrows represent the flow direction of the inert gas;
[0022] Figure 2 A schematic diagram of the structure of a vapor deposition device provided by an embodiment of the present utility model using a first shielding ring and a central shielding portion nested together;
[0023] Figure 3 A schematic structural diagram of a vapor deposition device provided by an embodiment of the present utility model using a first shielding ring and a second shielding ring nested with a central shielding portion;
[0024] Figure 4 A schematic diagram of the structure of the vapor deposition equipment provided by an embodiment of the present utility model using a first shielding ring, a second shielding ring, and a third shielding ring nested with a central shielding portion;
[0025] Figure 5 A bottom view of the three shielding rings and the central shielding portion provided in an embodiment of the present utility model when they are nested;
[0026] Figure 6 A schematic diagram of the thickness of the deposited film provided in an embodiment of the present invention.
[0027] Among them, the reference numerals in the figures are:
[0028] 1-base; 2-central shielding portion; 3-shielding ring; 4-driving structure; 11-substrate; 21-through hole; 31-first shielding ring; 32-second shielding ring; 33-third shielding ring. DETAILED DESCRIPTION
[0029] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.
[0030] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.
[0031] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.
[0032] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. It should be understood that the term "and / or" used in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In the description of this utility model, unless otherwise specified, "multiple" means two or more.
[0033] The vapor deposition equipment and semiconductor processing system provided by the present invention are described in detail below with reference to specific embodiments.
[0034] Figure 1Please refer to Figure 1 for a front view of the vapor deposition equipment provided by an embodiment of the present utility model. A first aspect of this embodiment provides a vapor deposition equipment, including a base 1, a central shielding part 2, at least one shielding ring 3 and a driving structure 4. The base 1 is used to carry a substrate 11, and the central shielding part 2 is arranged above the base 1 to shield the middle part of the substrate 11. The shielding ring 3 is used to be nested in the edge of the central shielding part 2. When the shielding ring 3 of this embodiment is nested in the edge of the central shielding part 2, the shielding ring 3 and the central shielding part 2 are seamlessly fitted together. The shielding ring 3 cooperates with the central shielding part 2 to deposit an edge thin film layer of a preset range on the edge of the substrate 11. The driving structure 4 is arranged in a one-to-one correspondence with the shielding ring 3. The driving structure 4 is used to drive the shielding ring 3 to move toward or away from the central shielding part 2, wherein the driving structure 4 drives the shielding ring 3 to move in the vertical direction, so that the shielding ring 3 moves toward or away from the central shielding part 2, so that the shielding ring 3 is nested in the edge of the central shielding part 2 or leaves the edge of the central shielding part 2.
[0035] The base 1 of this embodiment is used to support a wafer or other semiconductor device. For example, the base 1 is formed of a material such as graphite and is disk-shaped. It is understood that the substrate 11 of this embodiment is described using a wafer as an example, but is not limited to wafers and may also include other types of substrates, which are not limited in this embodiment of the utility model.
[0036] The central shielding portion 2 is arranged above the base 1 and directly above the wafer. The central shielding portion 2 can effectively shield the central portion of the wafer to prevent the deposition of a film layer on the central upper surface of the wafer during the deposition process. The central shielding portion 2 is generally circular, similar to the shape of the wafer. The size of the central shielding portion 2 in the radial direction (left and right directions in the figure) can be determined according to the area to be shielded, and is generally determined according to the size of the wafer. For example, the vapor deposition equipment is applied to edge deposition of a wafer with a diameter of 300 mm, and the radius of the central shielding portion 2 can be 140 mm, 143 mm or 145 mm. The material of the central shielding portion 2 includes metals such as stainless steel, titanium alloy or aluminum alloy, or non-metals such as ceramics. It will be understood that the central shielding portion 2 can be supported inside the vapor deposition equipment in any known manner.
[0037] The shielding ring 3 of this embodiment is arranged directly above the base 1, and cooperates with the central shielding part 2 to deposit a thin film layer of a preset range on the edge of the substrate 11. The shielding ring 3 of this embodiment is used to be nested in the edge of the central shielding part 2. The material of the shielding ring 3 can be a corrosion-resistant material such as ceramic, and the shielding ring 3 has a certain thickness. The number of shielding rings 3 in this embodiment is one or more. This embodiment does not impose any special restrictions on the specific number of shielding rings 3. For example, the radius of the central shielding part 2 is 145mm, the number of shielding rings 3 is two, and the width of the two shielding rings 3 is 1mm. When the inner shielding ring 3 is nested with the central shielding part 2, that is, when the inner shielding ring 3 is nested at the edge of the central shielding part 2, the deposition equipment deposits a 4mm edge thin film layer within the edge range of the substrate 11 with a radius of 146mm-150mm. When both shielding rings 3 are nested with the central shielding portion 2, i.e. the inner shielding ring 3 is nested with the edge of the central shielding portion 2 and the outer shielding ring 3 is nested with the edge of the inner shielding ring 3, the deposition apparatus deposits a 3mm edge thin film layer within a radius of 147mm-150mm on the substrate 11. Figure 5 There are three shielding rings 3, all of which are circular. Depending on the sizes of the three shielding rings 3 and the number of nesting of the shielding rings 3 and the central shielding portion 2, edge thin film layers of different sizes can be deposited.
[0038] The driving structure 4 of this embodiment is arranged in a one-to-one correspondence with the shielding ring 3, and is used to drive the shielding ring 3 to move toward or away from the central shielding part 2. This embodiment does not impose any special restrictions on the specific form of the driving structure 4, as long as it can drive the shielding ring 3 to move toward or away from the central shielding part 2 to cooperate with the central shielding part 2 to shield the substrate 11. For example, the driving structure 4 is a cylinder, or other linear driving structure.
[0039] Existing wafer edge deposition equipment requires shield rings of varying sizes due to varying requirements for edge drop dimensions (edge profiles) for different wafers. For example, the outer diameters of shield rings for 300mm diameter wafer edge deposition are typically 297.5mm, 292.5mm, 294.5mm, and 295.5mm. These are primarily used to compensate for edge dropouts of 3.75mm, 2.75mm, 2.25mm, and 1.25mm, respectively. Because the wafer edge profile during edge deposition depends on the size of the shield ring, existing edge deposition equipment often requires shutdown, cooling, and manual replacement of shield rings and debugging to meet the edge profile requirements of different products, wasting significant time and manpower. In this embodiment, the central shielding portion 2 is arranged above the base 1 to shield the middle of the wafer. The shielding ring 3 is used to be nested in the edge of the central shielding portion and cooperate with the central shielding portion 2 to deposit an edge thin film layer of a preset range on the edge of the substrate 11. The driving structure 4 is arranged in a one-to-one correspondence with the shielding ring 3. The driving structure 4 is used to drive the shielding ring 3 to move toward or away from the central shielding portion 2 so that the shielding ring 3 cooperates with the central shielding portion 2 to deposit a thin film layer of a preset size on the edge of the substrate 11. The vapor deposition equipment can drive the shielding ring 3 to move through the driving structure 4 so that the shielding ring 3 is nested in the edge of the central shielding portion 2 and cooperates with the central shielding portion 2 to deposit a thin film layer of a preset range on the edge of the substrate. Compared with existing edge deposition equipment, the vapor deposition equipment can realize deposition compensation of edge areas of different size ranges of wafers by driving the shielding ring 3 toward or away from the central shielding portion 2 through the driving structure 4. Compared with existing edge deposition equipment, the process of frequently replacing parts in the process chamber is greatly reduced, saving equipment downtime and manpower.
[0040] The vapor deposition equipment provided in this embodiment includes a base, a central shielding part, at least one shielding ring and a driving structure. The base is used to support the substrate. The central shielding part is arranged above the base to shield the middle part of the substrate. The shielding ring is used to be nested in the edge of the central shielding part and cooperate with the central shielding part to deposit an edge thin film layer of a preset range on the edge of the substrate. The driving structure and the shielding ring are arranged in a one-to-one correspondence. The driving structure is used to drive the shielding ring to move toward or away from the central shielding part. The shield ring of the vapor deposition equipment can be driven by the driving structure to move toward or away from the central shielding part. When the shielding ring moves toward the central shielding part and is nested in the edge of the central shielding part, the edge thin film layer of a preset range can be deposited on the edge of the substrate. The deposition equipment can automatically adjust the range of the edge deposition thin film layer according to the edge profile morphology requirements of different substrates, thereby improving work efficiency and saving manpower.
[0041] In one embodiment, see Figure 1The drive structure 4 is a pneumatic cylinder, which includes a cylinder barrel and a piston rod. The shielding ring 3 is fixedly connected to the piston rod of the cylinder. The drive structure 4 of this embodiment is a pneumatic cylinder. Cylinders have the advantages of simple structure, high output force, and strong adaptability. In addition, the principle and structure of the cylinder are simple, and the installation and maintenance are easy.
[0042] Figure 2 A schematic diagram of a structure in which a first shielding ring and a central shielding portion are nested in a vapor deposition device provided by an embodiment of the present utility model. Figure 3 A schematic diagram of the structure of the vapor deposition device provided by the embodiment of the present utility model using a first shielding ring and a second shielding ring nested with a central shielding portion, Figure 4 A schematic diagram of the structure of the vapor deposition device provided by the embodiment of the present utility model using the first shielding ring, the second shielding ring and the third shielding ring nested with the central shielding part, Figure 5 For a bottom view of the three shielding rings and the central shielding portion provided in the embodiment of the present invention when nested, please refer to Figure 2-Figure 5 ,in Figure 2-Figure 4 The circled portion is the edge deposition film position. Specifically, the vapor deposition apparatus of this embodiment includes a first shielding ring 31, a second shielding ring 32, and a third shielding ring 33 nested in sequence from the inside out, and a first cylinder, a second cylinder, and a third cylinder that respectively drive the three shielding rings. Each of the three cylinders includes a cylinder barrel and a piston rod connected to the cylinder barrel. The three piston rods are all hollow structures. The piston rod of the first cylinder is located within the hollow structure of the piston rod of the second cylinder, and the piston rod of the second cylinder is located within the hollow structure of the piston rod of the third cylinder.
[0043] In this embodiment, optionally, the radius of the central shielding portion 2 is 100 mm-145 mm. Exemplarily, the radius of the central shielding portion 2 can be 100 mm or 145 mm, or any value between 100 mm and 145 mm.
[0044] Optionally, the widths of the three shielding rings 3 along the radial direction are all 1.0 mm to 1.50 mm. Exemplarily, the widths of the three shielding rings 3 along the radial direction can be 1.0 mm, 1.50 mm, or any value between 1.0 mm and 1.50 mm.
[0045] Exemplarily, the vapor deposition equipment is applied to edge deposition of a wafer with a diameter of 300 mm, the radius of the central shielding portion 2 is 145 mm, and the widths of the three shielding rings 3 are 1.00 mm, 1.50 mm, and 1.50 mm, respectively. In this embodiment, the widths of the first shielding ring 31, the second shielding ring 32 and the third shielding ring 33 are 1.00 mm, 1.50 mm and 1.50 mm respectively. When the first shielding ring 31 is nested with the edge of the central shielding portion 2, the vapor deposition equipment is used to deposit and compensate for the collapsed area within the edge range of 146 mm to 150 mm of the wafer radius (i.e., within a 4 mm edge range). When the second cylinder drives the second shielding ring 32 to move toward the central shielding portion 2 so that the second shielding ring 32 is nested with the edge of the first shielding ring 31, the vapor deposition equipment is used to deposit and compensate for the collapsed area within the edge range of 147.5 mm to 150 mm of the wafer radius (i.e., within a 2.5 mm edge range). When the third cylinder drives the third shielding ring 33 to move toward the central shielding portion 2 so that the third shielding ring 33 is nested with the edge of the second shielding ring 32, the vapor deposition equipment is used to deposit and compensate for the collapsed area within the edge range of 149 mm to 150 mm of the wafer radius (i.e., within a 1 mm edge range). Of course, in other embodiments, the number of shadow rings 3 may be more than three or less than three.
[0046] Furthermore, in the above embodiment, the vapor deposition apparatus further includes a controller electrically connected to the drive structure 4. This embodiment controls the action of the drive structure 4 through the controller, thereby improving the user's operating experience and making it more convenient to operate the drive structure 4 of the vapor deposition apparatus.
[0047] See also Figure 1 As shown, the central shielding portion 2 of this embodiment has multiple axially extending through-holes 21; the through-holes 21 near the center of the central shielding portion 2 are straight holes, while the through-holes 21 near the edge of the central shielding portion 2 are inclined holes inclined toward the edge. In this embodiment, by providing multiple axially extending through-holes 21 in the central shielding portion 2, in order to prevent the deposited film from affecting the center of the wafer during edge deposition, this embodiment passes inert gas through the through-holes 21 to block the reaction gas of edge deposition as much as possible. Figure 1 The middle arrow represents the direction of inert gas flow during the deposition process. To better prevent edge deposition of reactive gases from depositing on the wafer directly opposite the central shielding portion 2 and the shielding ring 3, the through-holes 21 near the center of the central shielding portion 2 in this embodiment are straight holes, while the through-holes 21 near the edge of the central shielding portion 2 are inclined toward the edge. The vapor deposition apparatus of this embodiment has a greater inert gas flow rate than the reactive gas flow rate during edge deposition.
[0048] Specifically, the vapor deposition apparatus of this embodiment further includes a gas introduction unit (not shown) for supplying a reaction gas from above the substrate 11 toward the outside of the shielding ring 3. The gas introduction unit is also for supplying an inert gas from the through hole 21 toward the substrate 11. The type of reaction gas may vary depending on the thin film layer to be formed on the edge of the wafer.
[0049] Figure 6 For a schematic diagram of the thickness of the deposited film provided in the embodiment of the present invention, please refer to Figure 6 As shown, the horizontal axis represents the distance from the center of the wafer, and the vertical axis represents the thickness of the film formed on the wafer. Taking a 300mm diameter wafer as an example, when edge deposition is not performed, the thickness of the deposited film on the wafer is curve B; when edge deposition is performed using the vapor deposition equipment of the embodiment of the present invention, the thickness of the deposited film at the edge of the wafer is curve A. Figure 6 As shown, the thin film layer formed on the wafer using the vapor deposition equipment in the embodiment of the present invention has a thickness of the film layer close to the edge of the wafer, and curve A shows that the thickness of the film layer is equivalent to that of the center of the wafer, and the edge profile of the wafer meets the requirements.
[0050] The vapor deposition equipment provided by the embodiment of the present invention includes a base, a central shielding part, at least one shielding ring and a driving structure. The base is used to support the substrate. The central shielding part is arranged above the base and is used to shield the middle part of the substrate. The shielding ring is used to be nested in the edge of the central shielding part and cooperate with the central shielding part to deposit an edge thin film layer in a preset range on the edge of the substrate. The driving structure and the shielding ring are arranged in a one-to-one correspondence. The driving structure is used to drive the shielding ring to move toward or away from the central shielding part. The shielding ring of the vapor deposition equipment can be driven by the driving structure to move toward or away from the central shielding part. When the shielding ring moves toward the central shielding part and is nested in the edge of the central shielding part, the edge thin film layer in a preset range can be deposited on the edge of the substrate. The deposition equipment can automatically adjust the range of the edge deposition thin film layer according to the edge profile morphology requirements of different substrates, thereby improving work efficiency and saving manpower.
[0051] A second aspect of this embodiment provides a semiconductor processing system, which includes the vapor deposition equipment described in the above embodiment.
[0052] For example, the vapor deposition equipment includes a base, a central shielding part, at least one shielding ring and a driving structure. The base is used to support the substrate. The central shielding part is arranged above the base to shield the middle part of the substrate. The shielding ring is used to be nested in the edge of the central shielding part and cooperate with the central shielding part to deposit an edge thin film layer in a preset range on the edge of the substrate. The driving structure is arranged in a one-to-one correspondence with the shielding ring, and the driving structure is used to drive the shielding ring to move toward or away from the central shielding part.
[0053] The vapor deposition equipment of the semiconductor processing system provided by the embodiment of the present invention includes a base, a central shielding part, at least one shielding ring and a driving structure. The shielding ring of the vapor deposition equipment can be driven by the driving structure to move toward or away from the central shielding part. When the shielding ring moves toward the central shielding part and is nested in the edge of the central shielding part, it can achieve the deposition of an edge thin film layer within a preset range on the edge of the substrate. The deposition equipment can automatically adjust the range of the edge deposited thin film layer according to the edge profile morphology requirements of different substrates, thereby improving work efficiency and saving manpower.
[0054] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.
Claims
1. A vapor deposition device, characterized in that include: a base for supporting a substrate; a central shielding portion, disposed above the base and used to shield the middle portion of the substrate; At least one shielding ring, configured to be nested in the edge of the central shielding portion and cooperate with the central shielding portion to deposit an edge thin film layer within a preset range at the edge of the substrate; A driving structure is provided in a one-to-one correspondence with the shielding ring, and the driving structure is used to drive the shielding ring to move toward or away from the central shielding portion.
2. The vapor deposition apparatus according to claim 1, wherein: The outer contour of the central shielding portion is circular, and the shielding ring is annular.
3. The vapor deposition apparatus according to claim 1, wherein: The driving structure is a cylinder, which includes a cylinder barrel and a piston rod. The shielding ring is fixedly connected to the piston rod of the cylinder.
4. The vapor deposition apparatus according to claim 3, wherein: The vapor deposition equipment includes a first shielding ring, a second shielding ring and a third shielding ring which are nested in sequence from the inside to the outside, and a first cylinder, a second cylinder and a third cylinder which respectively drive the three shielding rings. The three cylinders each include a cylinder barrel and a piston rod connected to the cylinder barrel. The three piston rods are all hollow structures. The piston rod of the first cylinder is located in the hollow structure of the piston rod of the second cylinder, and the piston rod of the second cylinder is located in the hollow structure of the piston rod of the third cylinder.
5. The vapor deposition apparatus according to claim 4, characterized in that The radius of the central shielding portion is 100mm-145mm.
6. The vapor deposition apparatus according to claim 5, characterized in that The widths of the three shielding rings along the radial direction are all 1.00 mm to 1.50 mm.
7. The vapor deposition apparatus according to claim 1, wherein: A controller is also included, and the controller is electrically connected to the driving structure.
8. The vapor deposition apparatus according to claim 1, wherein: The central shielding portion has a plurality of axially penetrating through holes; the through holes near the center of the central shielding portion are straight holes, and the through holes near the edge of the central shielding portion are inclined holes inclined toward the edge.
9. The vapor deposition apparatus according to claim 8, characterized in that The invention also includes a gas introduction unit, which is used to supply reaction gas from above the substrate toward the outside of the shielding ring, and the gas introduction unit is also used to supply inert gas from the through hole toward the substrate.
10. A semiconductor processing system, characterized in that: The vapor deposition device comprises the vapor deposition device according to any one of claims 1 to 9.