Mini-LED chip with anti-collision crack structure

Abstract

The embodiment of the utility model provides a Mini-LED chip with an anti-collision crack structure, the Mini-LED chip is provided with an epitaxial substrate, a first sub-chip, a second sub-chip and a metal connecting wire, the first sub-chip is provided with a first electrode and a second electrode, and the second sub-chip is provided with a third electrode and a fourth electrode. A second electrode of the first sub-chip is connected with a third electrode of the second sub-chip through a metal connecting wire to realize electric conduction, a coating insulating layer is also arranged, the coating insulating layer covers the surface of the metal connecting wire to perform insulation protection on the metal connecting wire, a clearance area is arranged between the first sub-chip and the second sub-chip, and the first sub-chip and the second sub-chip are electrically connected through the clearance area. The width of the clearance area is greater than the width of the first sub-chip and the width of the second sub-chip, and a photoresist block is arranged in the clearance area.

Description

Technical Field

[0001] The present disclosure relates to the field of LED technology, and in particular to a Mini-LED chip with an anti-cracking structure. Background Art

[0002] Mini-LED chips have been widely used in liquid crystal display backlight, high-resolution direct display, digital display and other fields. With the increase in the number of Mini-LED chip manufacturing, yield and quality improvement have become key issues in the industry. During the die bonding process, existing Mini-LED chips may have the problem of the die bonding machine's ejector pins cracking the epitaxial layer, causing chip failure, which restricts the industry's technological progress. Chinese patents CN202180005001.3 and CN202111212826.0 both propose the use of multiple sub-chips in series to realize Mini-LED devices. By reinforcing the sub-chip located in the middle of the Mini-LED device, it can buffer the needle-piercing force during the die bonding process and improve the reliability of the micro-LED. However, due to the brittle material characteristics of the epitaxial layer itself, the sub-chip in the middle still faces the problem of being cracked. Even if the sub-chip in the middle is not powered, the sub-chip in the middle faces the risk of the sub-chip in the middle falling off from the epitaxial substrate after being cracked, causing the epitaxial layer or insulating layer of the device to peel. How to set up a force-bearing structure in the middle area of ​​the Mini-LED device that can withstand the impact of the ejector pin of the crystal bonding machine has become a technical problem that needs to be solved. Utility Model Content

[0003] In view of this, the present invention provides a Mini-LED chip with an anti-cracking structure, which at least partially solves the problems existing in the prior art.

[0004] A Mini-LED chip with an anti-cracking structure is provided with an epitaxial substrate, a first sub-chip, a second sub-chip, and metal wiring. The first sub-chip and the second sub-chip are respectively provided with a first semiconductor layer, a multi-quantum well light-emitting layer, a second semiconductor layer, and a first insulating layer. The first sub-chip is provided with a first electrode and a second electrode, and the second sub-chip is provided with a third electrode and a fourth electrode. The second electrode of the first sub-chip is connected to the third electrode of the second sub-chip through a metal wiring to achieve electrical conduction. A coating insulating layer is also provided. The coating insulating layer covers the surface of the metal wiring to insulate and protect the metal wiring. A clearance area is provided between the first sub-chip and the second sub-chip. The width of the clearance area is greater than the width of the first sub-chip and the width of the second sub-chip. A photoresist block is provided in the clearance area.

[0005] The photoresist block is made through a standard semiconductor yellow light process of spin coating, exposure, development, and post-baking. After development, the photoresist block of the desired shape is obtained and retained on the Mini-LED chip with an anti-cracking structure.

[0006] The first sub-chip and the second sub-chip are respectively located at the left and right ends of the epitaxial substrate.

[0007] A first lead-out electrode and a second lead-out electrode are also provided. The first lead-out electrode is connected to the first electrode of the first sub-chip, and the second lead-out electrode is connected to the fourth electrode of the second sub-chip.

[0008] The length of the photoresist block is smaller than the length of the clearance area.

[0009] The metal connection line is provided with a first metal connection line and a second metal connection line, the first metal connection line and the second metal connection line are connected in parallel, and the first metal connection line and the second metal connection line are respectively located at the upper and lower sides of the photoresist block.

[0010] The width of the photoresist block is smaller than the distance between the first metal connection line and the second metal connection line.

[0011] The thickness of the photoresist block is smaller than the thickness of the first sub-chip and the thickness of the second sub-chip.

[0012] The photoresist block is made of a transparent material, and the light emitted by the first sub-chip and the second sub-chip can pass through the photoresist block.

[0013] The area of ​​the first semiconductor layer is larger than the area of ​​the multi-quantum well light-emitting layer and the area of ​​the second semiconductor layer.

[0014] The lower surface of the first extraction electrode and the lower surface of the second extraction electrode are in the same plane.

[0015] Beneficial effects of the technical solution:

[0016] (1) A clearance area is provided between the first sub-chip and the second sub-chip, and a photoresist block is provided in the clearance area. The photoresist block is provided above the covering insulating layer. Even if the photoresist block is damaged, it will not affect the epitaxial layer and will not affect the device performance.

[0017] (2) The photoresist block is located between the first sub-chip and the second sub-chip and is transparent so as not to affect the light extraction of the sub-chips.

[0018] (3) The photoresist block is made through the standard semiconductor yellow light process of spin coating, exposure, development and post-baking, which is easy to manufacture. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present disclosure, the following briefly introduces the drawings required for use in the embodiments. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0020] Figure 1 Schematic diagram of the structure of a Mini-LED chip with an anti-cracking structure according to Example 1;

[0021] Figure 2 A bottom view of the Mini-LED chip with an anti-cracking structure according to Example 1;

[0022] Figure 3 Schematic diagram of the structure of the Mini-LED chip with an anti-cracking structure according to Example 2. DETAILED DESCRIPTION

[0023] The embodiments of the present disclosure are described in detail below with reference to the accompanying drawings.

[0024] The following describes the embodiments of the present disclosure through specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the contents disclosed in this specification. Obviously, the described embodiments are only a part of the embodiments of the present disclosure, rather than all of the embodiments. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present disclosure. It should be noted that, in the absence of conflict, the following embodiments and features in the embodiments can be combined with each other. Based on the embodiments in the present disclosure, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present disclosure.

[0025] It should be noted that various aspects of the embodiments within the scope of the appended claims are described below. It should be apparent that the aspects described herein can be embodied in a wide variety of forms, and any specific structure and / or function described herein is merely illustrative. Based on this disclosure, it should be understood by those skilled in the art that an aspect described herein can be implemented independently of any other aspect, and two or more of these aspects can be combined in various ways. For example, any number of aspects described herein can be used to implement an apparatus and / or practice a method. In addition, other structures and / or functionalities other than one or more of the aspects described herein can be used to implement this apparatus and / or practice this method.

[0026] It should also be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present disclosure. The illustrations only show components related to the present disclosure and are not drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component can be changed at will, and the component layout type may also be more complicated.

[0027] Additionally, in the following description, specific details are provided to provide a thorough understanding of the examples. However, one skilled in the art will appreciate that the aspects described can be practiced without these specific details. Example 1

[0028] See also Figures 1 to 2 A Mini-LED chip with an anti-cracking structure is provided with an epitaxial substrate 1, a first sub-chip 2, a second sub-chip 3, and a metal connection 4. The first sub-chip 2 and the second sub-chip 3 are respectively provided with a first semiconductor layer 5, a multi-quantum well light-emitting layer 6, a second semiconductor layer 7, and a first insulating layer 8. The first sub-chip 2 is provided with a first electrode 9 and a second electrode 10, and the second sub-chip 3 is provided with a third electrode 11 and a fourth electrode 12. The second electrode 10 of the first sub-chip 2 is connected to the third electrode 11 of the second sub-chip 3 through the metal connection 4 to achieve electrical conduction. A coating insulating layer 13 is also provided. The coating insulating layer 13 covers the surface of the metal connection 4 to insulate and protect the metal connection 4. A clearance area is provided between the first sub-chip 2 and the second sub-chip 3. The width of the clearance area is greater than the width of the first sub-chip 2 and the width of the second sub-chip 3. A photoresist block 14 is provided in the clearance area.

[0029] The photoresist block 14 is made by a standard semiconductor yellow light process of spin coating, exposure, development, and post-baking. After development, the photoresist block 14 of the desired shape is obtained and remains on the Mini-LED chip with the anti-cracking structure.

[0030] The first sub-chip 2 and the second sub-chip 3 are respectively located at the left and right ends of the epitaxial substrate 1 .

[0031] A first extraction electrode 15 and a second extraction electrode 16 are further provided. The first extraction electrode 15 is connected to the first electrode 9 of the first sub-chip 2 , and the second extraction electrode 16 is connected to the fourth electrode 12 of the second sub-chip 3 .

[0032] The length of the photoresist block 14 is smaller than the length of the clearance area.

[0033] The metal connection line 4 includes a first metal connection line 41 and a second metal connection line 42 . The first metal connection line 41 and the second metal connection line 42 are connected in parallel. The first metal connection line 41 and the second metal connection line 42 are located at the upper and lower sides of the photoresist block 14 , respectively.

[0034] The width of the photoresist block 14 is smaller than the distance between the first metal connection line 41 and the second metal connection line 42 .

[0035] The thickness of the photoresist block 14 is smaller than the thickness of the first sub-chip 2 and the thickness of the second sub-chip 3 .

[0036] The photoresist block 14 is made of transparent material, and the light emitted by the first sub-chip 2 and the second sub-chip 3 can pass through the photoresist block 14 .

[0037] The area of ​​the first semiconductor layer 5 is larger than the area of ​​the multi-quantum well light-emitting layer 6 and the area of ​​the second semiconductor layer 7 .

[0038] The lower surface of the first extraction electrode 15 and the lower surface of the second extraction electrode 16 are on the same plane. Example 2

[0039] like Figure 3 As shown, the photoresist block 14 is a two-layer composite structure, with the upper and lower layers using different photoresists.

[0040] The rest is the same as that of the first embodiment.

[0041] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that can be easily conceived by a person skilled in the art within the technical scope disclosed in this disclosure should be included in the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A Mini-LED chip with an anti-cracking structure, comprising an epitaxial substrate, a first sub-chip, a second sub-chip, and metal wiring, wherein the first sub-chip and the second sub-chip are respectively provided with a first semiconductor layer, a multi-quantum well light-emitting layer, a second semiconductor layer, and a first insulating layer; the first sub-chip is provided with a first electrode and a second electrode, and the second sub-chip is provided with a third electrode and a fourth electrode; the second electrode of the first sub-chip is electrically connected to the third electrode of the second sub-chip via a metal wiring, and the chip is characterized in that: A coating insulating layer is also provided, which covers the surface of the metal connection to provide insulation protection for the metal connection. A clearance area is provided between the first sub-chip and the second sub-chip. The width of the clearance area is greater than the width of the first sub-chip and the width of the second sub-chip. A photoresist block is provided in the clearance area, and the photoresist block is provided above the coating insulating layer.

2. The Mini-LED chip with an anti-cracking structure according to claim 1, wherein: The first sub-chip and the second sub-chip are respectively located at the left and right ends of the epitaxial substrate.

3. The Mini-LED chip with an anti-cracking structure according to claim 1, wherein: A first lead-out electrode and a second lead-out electrode are also provided. The first lead-out electrode is connected to the first electrode of the first sub-chip, and the second lead-out electrode is connected to the fourth electrode of the second sub-chip.

4. The Mini-LED chip with an anti-cracking structure according to claim 1, wherein: The length of the photoresist block is smaller than the length of the clearance area.

5. The Mini-LED chip with an anti-cracking structure according to claim 1, wherein: The metal connection line is provided with a first metal connection line and a second metal connection line, the first metal connection line and the second metal connection line are connected in parallel, and the first metal connection line and the second metal connection line are respectively located at the upper and lower sides of the photoresist block.

6. The Mini-LED chip with an anti-cracking structure according to claim 5, wherein: The width of the photoresist block is smaller than the distance between the first metal connection line and the second metal connection line.

7. The Mini-LED chip with an anti-cracking structure according to claim 1, wherein: The thickness of the photoresist block is smaller than the thickness of the first sub-chip and the thickness of the second sub-chip.

8. The Mini-LED chip with an anti-cracking structure according to claim 1, wherein: The photoresist block is made of a transparent material, and the light emitted by the first sub-chip and the second sub-chip can pass through the photoresist block.

9. The Mini-LED chip with an anti-cracking structure according to claim 1, wherein: The area of ​​the first semiconductor layer is larger than the area of ​​the multi-quantum well light-emitting layer and the area of ​​the second semiconductor layer.

10. The Mini-LED chip with an anti-cracking structure according to claim 3, wherein: The lower surface of the first extraction electrode and the lower surface of the second extraction electrode are in the same plane.

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