Temperature field for fluoride crystal growth

Abstract

The utility model discloses a temperature field for fluoride crystal growth, and particularly relates to the technical field of crystal growth, which comprises a processing table, a rotating unit arranged on the processing table, a support frame arranged on the rotating unit, a lifting unit arranged on the support frame, and a hanging bracket arranged at the lifting position of the lifting unit, a positioning barrel is fixedly connected to the upper surface of the machining table, a fluoride hearth group is arranged in the positioning barrel and comprises a plurality of longitudinally stacked crystal growth hearths, a positioning rod and a positioning groove which are inserted in a matched mode are arranged between every two adjacent crystal growth hearths, and graphite heaters used for heating fluoride crystal growth are arranged on the inner walls of the crystal growth hearths. The utility model solves the technical problems that the maintenance cost is increased due to the damage of the hearth because the hearth for the current thermal field is mostly of an integrated structure, and the thermal field for the crystal growth of fluoride crystals is relatively high in construction difficulty and is inconvenient to transfer and transport at the same time.

Description

Technical Field

[0001] The utility model relates to the technical field of crystal growth, and more specifically, to a temperature field for growing fluoride crystals. Background Art

[0002] With the increasing integration of semiconductor devices, the wavelengths of various light sources are becoming shorter, and this demand extends into the vacuum ultraviolet (UV) range. Fluoride crystals exhibiting excellent transmittance are used for optical materials in this wavelength range. For example, calcium fluoride single crystals are used in optical materials for photolithography using AF excimer lasers (193nm) and Fz excimer lasers (157nm). Within the single crystal furnace, different media exist, such as the melt, the crystal, and the surrounding atmosphere. Different media have different temperatures, and even within the same medium, the temperature distribution is not uniform. Obviously, the temperature within the furnace varies with spatial location. The temperature at a specific point may be different. We call the spatial distribution of temperature a moment. Every point in the entire space within the furnace has a specific temperature, which is the furnace temperature field. Currently, the quality of the temperature field significantly influences the quality of fluoride crystal growth. An appropriate temperature field produces high-quality single crystals, while an inappropriate temperature field can easily cause the single crystal to become polycrystalline or prevent seeding.

[0003] At present, the temperature field for fluoride crystal growth is mainly composed of a furnace and heating elements arranged in the furnace. By strictly controlling the temperature gradient formed by the heating elements, the quality of fluoride crystal growth can be guaranteed. However, the furnaces used for the temperature field are mostly integrated structures. Damage to the furnace will increase maintenance costs. In addition, the construction of the temperature field for fluoride crystal growth is relatively difficult and it is not convenient to transfer and transport.

[0004] The above information disclosed in this background technology is only used to increase the understanding of the background technology of this application. Therefore, it may include information that does not constitute the prior art known to ordinary technicians in this field. Utility Model Content

[0005] In order to overcome the above-mentioned shortcomings, the present invention aims to provide a technical solution that can solve the above-mentioned problems.

[0006] To achieve the above-mentioned purpose, the utility model provides the following technical solutions: a temperature field for fluoride crystal growth, comprising a processing table, a rotating unit is provided on the processing table, a support frame is provided on the rotating unit, a lifting unit is provided on the support frame, a hanger is provided at the lifting position of the lifting unit, a positioning cylinder is fixedly connected to the upper surface of the processing table, a fluoride furnace group is provided in the positioning cylinder, the fluoride furnace group includes a plurality of longitudinally stacked crystal growth furnaces, and positioning rods and positioning grooves for mating and plugging are provided between adjacent two crystal growth furnaces, a graphite heater for heating fluoride crystal growth is provided on the inner wall of the crystal growth furnace, and a support ring that cooperates with the hanger is fixedly connected to the outer surface of the crystal growth furnace.

[0007] In a preferred embodiment, the rotating unit includes a rotating device 1, which is fixedly connected to the bottom of the processing table, and the output end of the rotating device 1 is fixedly connected to a gear, and a toothed disc is meshed with the gear, and the toothed disc is rotatably connected to the upper surface of the processing table, and the support frame is fixedly connected to the toothed disc.

[0008] In a preferred embodiment, the lifting unit includes a screw rod, which is rotatably connected to the inner side of the support frame, and the top of the support frame is fixedly connected to a rotating device 2, the output end of the rotating device 2 is transmission-connected to one end of the screw rod, and a lifting block is threadedly connected to the screw rod, and a light rod is fixedly connected to the inner side of the support frame, the lifting block is slidably connected to the lifting block, and the hanger is fixedly connected to the lifting block.

[0009] In a preferred embodiment, the screw rod is also threadedly connected to an auxiliary support block, the auxiliary support block is slidably connected to the light rod, the auxiliary support block is fixedly connected to a reinforcing rib, and one end of the reinforcing rib is fixedly connected to the hanger.

[0010] In a preferred embodiment, the crystal growth furnace at the bottom is a single-opening structure, and the fluoride furnace group is used to place a crucible filled with fluoride raw materials.

[0011] In a preferred embodiment, a thermal insulation felt is fixedly connected to the bottom of each crystal growth furnace, and a positioning rod arranged on the crystal growth furnace movably passes through the thermal insulation felt.

[0012] The technical effects and advantages of this utility model are:

[0013] 1. The utility model provides a temperature field for fluoride crystal growth, which is composed of a plurality of longitudinally stacked crystal growth furnaces. The traditional furnace is divided into a plurality of independent individuals, and the stacked plug-in positioning is achieved by providing matching plug-in positioning rods and positioning grooves between two adjacent crystal growth furnaces. This can reduce the complexity of the overall construction of the furnace structure. At the same time, since a plurality of crystal growth furnace individuals are provided, the cost of subsequent maintenance and replacement can be reduced.

[0014] 2. The utility model provides a temperature field for fluoride crystal growth. By setting a rotating unit and a lifting unit, the two can provide lifting and rotating capabilities for the hanger, and can provide transportation for the crystal growth furnace when the fluoride furnace group is being built or dismantled, so as to achieve the purpose of improving the disassembly and assembly efficiency of the fluoride furnace group. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] To more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for the embodiments or the description of the prior art. Obviously, the drawings described below are merely illustrative, and those skilled in the art can, without inventive effort, derive other implementation drawings based on the provided drawings.

[0016] Figure 1 This is a schematic diagram of the planar structure of a temperature field for growing fluoride crystals according to the present invention.

[0017] Figure 2 For this utility model Figure 1 Enlarged view of part A in the middle.

[0018] Figure 3 It is a three-dimensional diagram of the processing table, rotating unit and lifting unit of the present invention.

[0019] Figure 4 This is a structural diagram of the crystal growth furnace of the present invention.

[0020] The accompanying drawings are marked as follows: 1. processing table; 2. rotating unit; 21. rotating device 1; 22. gear; 23. gear disc; 3. support frame; 4. lifting unit; 41. screw; 42. rotating device 2; 43. lifting block; 44. light rod; 5. hanger; 6. positioning cylinder; 7. fluoride furnace group; 8. graphite heater; 9. support ring; 10. positioning rod; 101. positioning groove; 11. auxiliary support block; 12. reinforcing rib; 13. thermal insulation felt. DETAILED DESCRIPTION

[0021] The following describes the implementation of the present invention through specific embodiments. Those skilled in the art can readily understand the other advantages and benefits of the present invention from the contents disclosed in this specification. Obviously, the embodiments described are only a portion of the embodiments of the present invention, not all of them. All other embodiments derived by persons of ordinary skill in the art based on the embodiments of the present invention without inventive effort are also within the scope of protection of the present invention.

[0022] See also Figures 1-4 The utility model provides a temperature field for growing fluoride crystals, including a processing table 1, see Figure 1 One side of the upper surface of the processing table 1 is the loading area, the processing table 1 is provided with a rotating unit 2, the rotating unit 2 is provided with a support frame 3, the support frame 3 is provided with a lifting unit 4, the lifting position of the lifting unit 4 is provided with a hanger 5, the upper surface of the processing table 1 is fixedly connected with a positioning cylinder 6, the positioning cylinder 6 is provided with a fluoride furnace group 7, the fluoride furnace group 7 includes a plurality of longitudinally stacked crystal growth furnaces, and the fluoride furnace group 7 is constructed by setting up a plurality of independent crystal growth furnaces, which can meet the fluoride furnace In order to meet the needs of the combined construction of the chamber group 7 and facilitate the subsequent dismantling and transfer of the fluoride furnace chamber group 7, a positioning rod 10 and a positioning groove 101 for mating are set between the two adjacent crystal growth furnaces, and a graphite heater 8 for heating fluoride crystal growth is set on the inner wall of the crystal growth furnace. The number of graphite heaters 8 can be set multiple, and the specific number of graphite heaters 8 matched on the crystal growth furnace should meet the temperature gradient requirements for fluoride crystal growth. The outer surface of the crystal growth furnace is fixedly connected with a support ring 9 supported by the matching hanger 5.

[0023] The rotating unit 2 includes a rotating device 21, which is a self-locking rotating motor. The rotating device 21 is fixedly connected to the bottom of the processing table 1. The output end of the rotating device 21 is fixedly connected to a gear 22, and a toothed disc 23 is meshed with the gear 22. The toothed disc 23 is rotatably connected to the upper surface of the processing table 1. The support frame 3 is fixedly connected to the toothed disc 23. The rotating device 21 drives the gear 22 to rotate, and the toothed disc 23 can rotate on the upper surface of the processing table 1, so that the angle of the support frame 3 can be easily adjusted.

[0024] The lifting unit 4 includes a screw rod 41, which is rotatably connected to the inner side of the support frame 3. The top of the support frame 3 is fixedly connected to a rotating device 2 42. The rotating device 2 42 also adopts a self-locking rotating motor. The rotating devices in this application are all program-controlled by an existing controller. The output end of the rotating device 2 42 is transmission-connected to one end of the screw rod 41. A lifting block 43 is threadedly connected to the screw rod 41. A light rod 44 is fixedly connected to the inner side of the support frame 3. The lifting block 43 is slidably connected to the lifting block 43. The hanger 5 is fixedly connected to the lifting block 43. The rotating device 2 42 drives the screw rod 41 to rotate, and the lifting block 43 can provide lifting power for the hanger 5. Combined with the rotational power of the rotating unit 2, the hanger 5 can provide multi-position transportation for the crystal growth furnace to promote the construction of the fluoride furnace group 7.

[0025] An auxiliary support block 11 is also threadedly connected to the screw rod 41, and the auxiliary support block 11 is slidably connected to the light rod 44. A reinforcing rib 12 is fixedly connected to the auxiliary support block 11, and one end of the reinforcing rib 12 is fixedly connected to the hanger 5. The auxiliary support block 11 can be lifted and lowered synchronously with the lifting block 43. The auxiliary support block 11 and the lifting block 43 provide two-point support for the position of the hanger 5, so that the hanger 5 fixed on the auxiliary support block 11 and the lifting block 43 can be more stable.

[0026] The crystal growth furnace at the bottom is a single-opening structure, that is, except for the bottom, all other crystal growth furnaces are double-opening structures. The fluoride furnace group 7 is used to place a crucible filled with fluoride raw materials.

[0027] The bottom of each crystal growth furnace is fixedly connected with an insulation felt 13, and the positioning rod 10 arranged on the crystal growth furnace moves through the insulation felt 13. When the positioning rods 10 and positioning grooves 101 of two adjacent crystal growth furnaces are plugged and assembled, the insulation felt 13 can be pressed between the two adjacent crystal growth furnaces, and the insulation felt 13 insulates the connection between the crystal growth furnaces, which can reduce the heat loss of the crystal growth furnace.

[0028] When the present invention is in use, the crystal growth furnace is loaded at the loading area position to control the hanger 5 to descend to the loading area position, and the hanger 5 is moved to the bottom of the support ring 9 on the crystal growth furnace to control the rotation of the screw rod 41. Under the action of the guide sliding lifting block 43 of the light rod 44, the hanger 5 can adjust the height of the crystal growth furnace, and then the toothed disc 23 is rotated to allow the crystal growth furnace to move to the upper position of the positioning cylinder 6 and control the crystal growth furnace to fall into the positioning cylinder 6. Subsequently, multiple crystal growth furnaces are vertically stacked in the positioning cylinder 6 in sequence, and the positioning rod 10 and the positioning groove 101 are used to achieve superposition positioning, so that the fluoride crystal growth temperature field is completed; similarly, the cooperation of the rotating unit 2 and the lifting unit 4 can assist in the disassembly of the fluoride furnace group 7;

[0029] When fluoride crystals need to be produced, the crucible is filled with fluoride and other raw materials and placed in the fluoride furnace group 7. The existing temperature control system is used to control the temperature gradient of the graphite heater 8, so that the existing crystal growth method such as the lifting method can be used to carry out the crystal growth processing of fluoride crystals.

Claims

1. A temperature field for growing fluoride crystals, comprising a processing table (1), characterized in that: The processing table (1) is provided with a rotating unit (2), the rotating unit (2) is provided with a supporting frame (3), the supporting frame (3) is provided with a lifting unit (4), the lifting position of the lifting unit (4) is provided with a hanger (5), the upper surface of the processing table (1) is fixedly connected with a positioning cylinder (6), a fluoride furnace group (7) is provided in the positioning cylinder (6), the fluoride furnace group (7) includes a plurality of longitudinally stacked crystal growth furnaces, and a positioning rod (10) and a positioning groove (101) for mating and plugging are provided between two adjacent crystal growth furnaces, a graphite heater (8) for heating fluoride crystal growth is provided on the inner wall of the crystal growth furnace, and a supporting ring (9) for supporting by the hanger (5) is fixedly connected to the outer surface of the crystal growth furnace.

2. The temperature field for fluoride crystal growth according to claim 1, characterized in that: The rotating unit (2) comprises a rotating device (21) fixedly connected to the bottom of the processing table (1), an output end of the rotating device (21) fixedly connected to a gear (22), a toothed disc (23) meshingly connected to the gear (22), the toothed disc (23) rotatably connected to the upper surface of the processing table (1), and the support frame (3) fixedly connected to the toothed disc (23).

3. The temperature field for growing fluoride crystals according to claim 1, characterized in that: The lifting unit (4) includes a screw rod (41), the screw rod (41) is rotatably connected to the inner side of the support frame (3), the top of the support frame (3) is fixedly connected to a second rotating device (42), the output end of the second rotating device (42) is transmission-connected to one end of the screw rod (41), a lifting block (43) is threadedly connected to the screw rod (41), the inner side of the support frame (3) is fixedly connected to a light rod (44), the lifting block (43) is slidably connected to the lifting block (43), and the hanger (5) is fixedly connected to the lifting block (43).

4. The temperature field for growing fluoride crystals according to claim 3, characterized in that: An auxiliary support block (11) is also threadedly connected to the screw rod (41), and the auxiliary support block (11) is slidably connected to the light rod (44). A reinforcing rib (12) is fixedly connected to the auxiliary support block (11), and one end of the reinforcing rib (12) is fixedly connected to the hanger (5).

5. The temperature field for growing fluoride crystals according to claim 1, characterized in that: The crystal growth furnace at the bottom is a single-opening structure, and the fluoride furnace group (7) is used to place a crucible filled with fluoride raw materials.

6. The temperature field for growing fluoride crystals according to claim 1, characterized in that: The bottom of each crystal growth furnace is fixedly connected with a thermal insulation felt (13), and a positioning rod (10) arranged on the crystal growth furnace movably passes through the thermal insulation felt (13).

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