Substrate processing equipment and semiconductor processing system

Abstract

The utility model provides a substrate processing device and a semiconductor processing system, belonging to the technical field of semiconductor manufacturing, the substrate processing device comprises a reaction chamber and a detection part arranged on the side wall of the reaction chamber, the detection part comprises a shell connected with the reaction chamber and a detection window arranged in the shell, and the detection window is arranged on the side wall of the reaction chamber. The detection window is used for acquiring an optical signal in the reaction cavity so as to determine an etching end point in the reaction cavity, the shell is provided with a protective gas inlet, a gas inlet channel communicated with the reaction cavity is formed between the side wall of the detection window and the shell, and the included angle between the gas inlet channel and the vertical direction is 30-60 degrees. The substrate processing equipment can prevent or reduce etching gas or etching gas byproducts from reaching the detection window, the included angle between the gas inlet direction of protective gas at the detection window and the vertical direction is 30-60 degrees, the protective gas is prevented from directly blowing the etching gas, and the stability of the etching gas is improved.

Description

Technical Field

[0001] The utility model belongs to the technical field of semiconductor manufacturing, and more specifically, relates to a substrate processing device and a semiconductor processing system. Background Art

[0002] In integrated circuit manufacturing, etching technology is often required to form various etched patterns, such as contact hole patterns, trench patterns, or gate patterns. Dry etching (plasma etching) is one of the most commonly used methods in existing etching processes. The accuracy of etching is directly related to the characteristic size of the etched pattern. Therefore, etching endpoint detection in plasma etching has become a key process in plasma etching.

[0003] Optical emission spectroscopy is one of the most commonly used methods for detecting the endpoint of plasma etching. Its operating principle is based on analyzing the spectrum emitted by a substance after being excited. During the plasma etching process, the etched substance is excited and emits a spectrum that can be analyzed to provide useful information about the etching process. During the etching process, especially at the endpoint, the conversion of the etched material causes changes in the plasma composition and, consequently, in the emission spectrum. By continuously monitoring changes in the plasma emission spectrum, it is possible to determine when the etched film layer has been completely removed. However, as the plasma etching process continues, etching byproducts deposit on the detection window of the reaction chamber. As the reaction chamber runs longer, the etching byproducts on the detection window become increasingly thick, causing unstable signal reception in the endpoint detection system and resulting in system downtime. Utility Model Content

[0004] The purpose of the present utility model is to provide a substrate processing device and a semiconductor processing system to solve the problem that as the substrate processing equipment runs longer in the reaction chamber, the etching byproducts on the detection window become thicker and thicker, resulting in unstable signal reception of the endpoint detection system and downtime.

[0005] To achieve the above-mentioned purpose, the technical solution adopted by the present invention is as follows: In a first aspect, the present invention provides a substrate processing device, comprising:

[0006] A reaction chamber and a detection portion provided on a side wall of the reaction chamber;

[0007] The detection portion includes a shell connected to the reaction chamber and a detection window arranged in the shell. The detection window is used to obtain an optical signal in the reaction chamber to determine the etching end point in the reaction chamber. An air inlet channel connected to the reaction chamber is formed between the side wall of the detection window and the shell. The angle between the air inlet channel and the vertical direction is 30-60 degrees. A protective gas inlet is provided on the shell for introducing protective gas into the air inlet channel.

[0008] In one embodiment, a nozzle is provided in the shell, and the nozzle is used to evenly distribute the protective gas in the air inlet channel.

[0009] In one embodiment, the angle between the air inlet passage and the vertical direction is 45 degrees.

[0010] In one embodiment, the detection window includes a window glass and an optical fiber connected to the window glass, the window glass is used to receive the optical signal in the reaction chamber, and the optical fiber is used to connect to an endpoint detection device.

[0011] In one embodiment, the window glass has a receiving surface parallel to the side wall of the reaction chamber and an extension portion parallel to the inner wall of the shell, the receiving surface is used to obtain the optical signal in the reaction chamber, and the air inlet channel is formed between the extension portion and the inner wall of the shell.

[0012] In one embodiment, a pipe joint is provided at the shielding gas inlet, and the pipe joint is used to be connected to a shielding gas supply device.

[0013] In one embodiment, a susceptor and a gas shower head are provided in the reaction chamber. The susceptor is used to support the wafer, and the gas shower head is used to introduce reaction gas into the reaction chamber. A plasma processing area is located between the susceptor and the gas shower head.

[0014] In one embodiment, the base is an electrostatic chuck, and a plasma confinement ring is provided on the outer side of the base.

[0015] In one embodiment, the protective gas is argon or helium.

[0016] A second aspect of the present invention provides a semiconductor processing system, comprising the substrate processing equipment as described above.

[0017] The substrate processing equipment provided by the present invention includes a reaction chamber and a detection part arranged on the side wall of the reaction chamber, the detection part includes a shell connected to the reaction chamber and a detection window arranged in the shell, the detection window is used to obtain an optical signal in the reaction chamber to determine the etching end point in the reaction chamber, an air inlet channel connected to the reaction chamber is formed between the side wall of the detection window and the shell, the angle between the air inlet channel and the vertical direction is 30-60 degrees, and a protective gas inlet is provided on the shell for introducing protective gas into the air inlet channel. The substrate processing equipment introduces protective gas through a protective gas inlet on the shell, and the protective gas forms a gas protection layer at the detection window through the air inlet channel. During the etching process, the gas protection layer can prevent or reduce the etching gas or etching gas by-products from reaching the detection window, thereby avoiding the phenomenon of unstable signal reception and shutdown of the endpoint detection system caused by the accumulation of etching by-products on the detection window as the reaction chamber runs longer. The angle between the air inlet channel and the vertical direction is 30-60 degrees, and the angle between the air inlet direction of the protective gas in the reaction chamber and the vertical direction is 30-60 degrees, thereby avoiding the protective gas from blowing directly onto the etching gas and improving the stability of the etching gas in the reaction chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0019] Figure 1 A schematic structural diagram of a substrate processing device provided by an embodiment of the present utility model;

[0020] Figure 2 for Figure 1 The schematic diagram of the structure after enlarging A in the middle;

[0021] Figure 3 This is a schematic structural diagram of a nozzle disposed in a shell of a substrate processing device provided in an embodiment of the present utility model.

[0022] Among them, the reference numerals in the figures are:

[0023] Reaction chamber; 2-detection part; 11-top wall; 12-bottom wall; 13-side wall; 14-base; 15-gas shower head; 16-upper electrode; 17-lower electrode; 18-plasma confinement ring; 21-housing; 22-detection window; 23-gas inlet channel; 24-shower head; 211-shielding gas inlet; 212-pipeline connector; 221-window glass; 222-optical fiber; 2211-receiving surface; 2212-extension part; 241-mounting hole; 242-injection hole.

[0024] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts shall fall within the scope of protection of the present invention.

[0025] In the description of the present invention, it should be understood that the terms "including" and "having" and any variations thereof used herein are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units explicitly listed, but may include other steps or units not explicitly listed or inherent to these processes, methods, products or apparatuses.

[0026] It should be understood that the terms "length", "width", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention.

[0027] In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. It should be understood that the term "and / or" used in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone. In the description of this utility model, unless otherwise specified, "multiple" means two or more.

[0028] The substrate processing equipment and semiconductor processing system provided by the present invention are described in detail below with reference to specific embodiments.

[0029] Figure 1 A schematic structural diagram of a substrate processing device provided by an embodiment of the present utility model is shown. Figure 2 for Figure 1 Please refer to the enlarged structural diagram of A in the middle. Figure 1 and Figure 2 In a first aspect of the present embodiment, a substrate processing device is provided, comprising a reaction chamber 1 and a detection portion 2 arranged on the side wall of the reaction chamber; the detection portion 2 comprises a shell 21 connected to the reaction chamber and a detection window 22 arranged in the shell 21, the detection window 22 is used to obtain an optical signal in the reaction chamber 1 to determine the etching end point in the reaction chamber 1, an air inlet channel 23 connected to the reaction chamber 1 is formed between the side wall of the detection window 22 and the shell 21, the angle between the air inlet channel 23 and the vertical direction is 30-60 degrees, and a protective gas inlet 211 is provided on the shell 21 for introducing protective gas into the air inlet channel 23.

[0030] The substrate processing equipment of this embodiment is a plasma etching apparatus. The reaction chamber 1 of this embodiment is a reaction chamber surrounded by multiple walls. For example, the reaction chamber 1 of this embodiment is formed by a top wall 11, a bottom wall 12, and side walls 13. The shape and volume of the reaction chamber 1 are not particularly limited in this embodiment. The reaction chamber 1 of this embodiment is provided with a susceptor 14 for placing the substrate and a gas showerhead 15. The gas showerhead 15 is connected to a reaction gas supply device to supply reaction gas to the reaction chamber 1 during the plasma etching process. The gas showerhead 15 of this embodiment is located above and opposite the susceptor 14. The plasma reaction chamber 1 is provided with corresponding upper and lower electrodes 16 and 17 for exciting the reaction gas to generate plasma PS, thereby filling the reaction chamber 1 with plasma during the process. An exhaust pump (not shown) is also provided below the reaction chamber 1 to remove reaction byproducts from the plasma reaction chamber 1.

[0031] In this embodiment, a plasma confinement ring 18 is provided around the base 14. The plasma confinement ring 18 is located between the base 14 and the inner wall 13 of the plasma reaction chamber 1. The plasma confinement ring 18 is used to discharge the reaction by-product gases out of the reaction area while confining the plasma PS within the plasma processing area to prevent the plasma PS from overflowing from the plasma reaction chamber 1 with the exhaust gases.

[0032] The base 14 of this embodiment is used to support wafers or other semiconductor devices. One or more recesses for accommodating wafers may be formed in the base 14. Exemplarily, the base 14 is formed of a material such as graphite and is disc-shaped. The base 14 is disposed on a drive unit, which can drive the base 14 to rotate, causing the wafer supported on the base 14 to rotate accordingly. It is understandable that the substrate of this embodiment is described using a wafer as an example, but is not limited to wafers and may also include other types of substrates, and the embodiment of the utility model is not limited to this.

[0033] The substrate processing equipment of this embodiment uses an endpoint detection device to detect the endpoint of plasma etching in the reaction chamber. At the endpoint of the etching process, the etched material undergoes a transformation, causing the plasma composition to change, resulting in a change in the emission spectrum. The endpoint detection device performs endpoint detection through optical emission spectroscopy, which continuously monitors changes in the plasma emission spectrum to determine when the etched film layer has been completely removed. The detection unit 2 of the substrate processing equipment of this embodiment includes a housing 21 connected to the reaction chamber 1 and a detection window 22 disposed within the housing 21. The detection window 22 is used by the endpoint detection device to obtain an optical signal within the reaction chamber 1 to determine the etching endpoint within the reaction chamber 1.

[0034] In this embodiment, a protective gas inlet 211 is provided on the shell 21, and an air inlet channel 23 is formed between the side wall of the detection window 22 and the shell 21. The angle between the air inlet channel 23 and the vertical direction is 30-60 degrees. In this embodiment, a protective gas inlet 211 is provided on the shell 21 to introduce protective gas into the reaction chamber 1. The protective gas can be helium or argon, or other inert gases. The protective gas entering from the protective gas inlet 211 forms a protective layer at the air inlet channel 23 between the shell 21 and the detection window 22. The gas protective layer protects the detection window 22 and can avoid or reduce the accumulation of etching gas or etching by-products in the detection window 22, thereby ensuring that the detection window 22 can fully obtain the optical signal in the reaction chamber and avoid the endpoint detection system from shutting down due to unstable signal reception. In this embodiment, the angle between the sidewall of the detection window 22 and the housing 21 of the gas inlet channel 23 and the vertical direction is 30-60 degrees, so that the angle between the inlet direction of the shielding gas in the reaction chamber 1 and the vertical direction is 30-60 degrees. The angle of 30-60 degrees includes any angle between 30 degrees, 60 degrees, and 30-60 degrees. The gas shield enters the reaction chamber 1 at an angle of 30-60 degrees, preventing the shielding gas from being directly blown toward the plasma PS. Moreover, after entering the reaction chamber 1, the gas shield is quickly pumped away by the exhaust pump through the plasma confinement ring 18 below the reaction chamber 1, thereby minimizing the impact on the plasma PS and improving the stability of the plasma PS in the reaction chamber 1.

[0035] The substrate processing equipment provided in this embodiment includes a reaction chamber and a detection part arranged on the side wall of the reaction chamber, the detection part includes a shell connected to the reaction chamber and a detection window arranged in the shell, the detection window is used to obtain an optical signal in the reaction chamber to determine the etching end point in the reaction chamber, and an air inlet channel connected to the reaction chamber is formed between the side wall of the detection window and the shell, and the angle between the air inlet channel and the vertical direction is 30-60 degrees. A protective gas inlet is provided on the shell for introducing protective gas into the air inlet channel. The substrate processing equipment introduces protective gas through a protective gas inlet on the shell. The protective gas forms a gas protection layer at the detection window through the air inlet channel. During the etching process, the gas protection layer can prevent or reduce the etching gas or etching gas byproducts from reaching the detection window, thereby avoiding the phenomenon of unstable signal reception and shutdown of the endpoint detection system caused by the accumulation of etching byproducts on the detection window as the reaction chamber operates for an increasing time. The angle between the air inlet channel and the vertical direction is 30-60 degrees, and the angle between the air inlet direction of the protective gas in the reaction chamber and the vertical direction is also 30-60 degrees, thereby avoiding the protective gas from directly blowing toward the plasma and improving the stability of the plasma.

[0036] Figure 3 For a schematic diagram of the structure of the nozzle provided in the housing of the substrate processing device provided by the embodiment of the present invention, please refer to Figure 1-Figure 3 In a specific embodiment, a nozzle 24 is provided in the shell 21, and the nozzle 24 is used to evenly distribute the protective gas in the air inlet channel 23. In this embodiment, by providing the nozzle 24 in the shell 21, the protective gas is evenly distributed in the air inlet channel 23, so that the gas protection layer can better protect the detection window 22. Specifically, the gas protection layer of this embodiment can protect the detection window 22 within a 360-degree range, which can not only protect the detection window 22 from the problem of unstable light intensity reception caused by the etching gas or the by-products of the etching gas, but also reduce the maintenance frequency of the detection window during maintenance. The nozzle 24 of this embodiment is annular, including an annular main body, the annular main body having a mounting hole 241 located in the center and a plurality of injection holes 242 opened on the annular main body, and the injection holes 242 are evenly distributed along the circumference. The nozzle 24 is installed in the shell 21 through the mounting hole 241.

[0037] Preferably, the angle between the air inlet channel 23 and the vertical direction is 45 degrees. In this embodiment, the angle between the side wall of the housing 21 and the side wall 13 of the reaction chamber 1 is 45 degrees, and the manufacturing method is simple.

[0038] The detection window 22 includes a window glass 221 and an optical fiber 222 connected to the window glass 221. The window glass 221 is used to receive optical signals within the reaction chamber 1, and the optical fiber 222 is used to connect to an endpoint detection device. This embodiment uses the optical fiber 222 extending into the housing to transmit the optical signal within the reaction chamber 1 received by the window glass 221 to the endpoint detection device, resulting in a simple structure and easy manufacture.

[0039] The window glass 221 of this embodiment has a receiving surface 2211 parallel to the side wall 13 of the reaction chamber 1 and an extension portion 2212 parallel to the inner wall of the shell 21. The receiving surface 2211 is used to obtain optical signals in the reaction chamber 1. The air inlet channel 23 is formed between the extension portion 2212 and the inner wall of the shell 21.

[0040] The receiving surface 2211 of the window glass 221 of this embodiment is used to receive optical signals within the reaction chamber. The receiving surface 2211 is parallel to the sidewall 13 of the reaction chamber 1, allowing the window glass 221 to more directly receive the spectrum emitted by the plasma within the reaction chamber 1. The extension 2212 of the window glass 221 of this embodiment is parallel to the inner wall of the housing 21. The extension 2212 has a certain length, which ensures that the air inlet channel 23 has a certain length in the air inlet direction. This allows the protective gas to form a stable gas protective layer outside the receiving surface 2211. The gas protective layer can better isolate the etching gas or etching byproducts from the receiving surface 2211, preventing the etching gas or etching byproducts from accumulating on the receiving surface 2211 of the window glass 221.

[0041] In this embodiment, the outer contour of the cross section of the extension portion 2212 is the same as the outer contour of the cross section of the housing 21. For example, the outer contour of the cross section of the extension portion 2212 and the outer contour of the cross section of the housing 21 are both circular. An air inlet channel 23 is formed between the extension portion 2212 and the housing 21. The protective gas entering from the protective gas inlet flows out through the air inlet channel 23 to form a circular gas protective layer. The gas protective layer can protect the detection window 22 within a 360-degree range, better protecting the detection window 22 from the etching gas or etching gas byproducts. The extension portion 2212 of this example has a hollow structure, and part of the optical fiber 222 is located in the hollow portion of the extension portion 2212 and connected to the receiving surface 2211.

[0042] The shielding gas inlet 211 is provided with a pipe joint 212 for connecting to a shielding gas supply device. In this embodiment, the shielding gas inlet 211 is provided with a pipe joint 212 to facilitate connection of an external pipe to the shielding gas supply device.

[0043] Preferably, the base 14 is an electrostatic chuck, and a plasma confinement ring is provided outside the base 14. The base 14 of this embodiment adopts an electrostatic chuck, which utilizes the principle of electrostatic adsorption to evenly distribute the force and maintain good flatness of the wafer.

[0044] During the plasma etching process in the substrate processing apparatus of this embodiment, the shielding gas entering through the shielding gas inlet 211 forms a shielding layer at the inlet channel 23 between the housing 21 and the detection window 22. This shielding layer protects the detection window 22, preventing or reducing the accumulation of etching gas or etching byproducts at the detection window 22, thereby ensuring that the detection window 22 can fully obtain the optical signal within the reaction chamber and preventing the endpoint detection system from shutting down due to unstable signal reception. In this embodiment, the inlet channel 23 between the sidewall of the detection window 22 and the housing 21 is angled at 30-60 degrees with respect to the vertical direction. The shielding layer enters the reaction chamber 1 at an angle of 30-60 degrees, preventing the shielding gas from being directly blown toward the plasma. Furthermore, after entering the reaction chamber 1, the shielding layer is rapidly drawn away by the exhaust pump through the plasma confinement ring 18 below the reaction chamber 1, minimizing its impact on the plasma PS and improving the stability of the plasma PS within the reaction chamber 1.

[0045] A second aspect of this embodiment provides a semiconductor processing system, which includes the substrate processing equipment described in the above embodiment.

[0046] For example, the substrate processing equipment includes a reaction chamber and a detection part arranged on the side wall of the reaction chamber, the detection part includes a shell connected to the reaction chamber and a detection window arranged in the shell, the detection window is used to obtain the optical signal in the reaction chamber to determine the etching end point in the reaction chamber, and an air inlet channel connected to the reaction chamber is formed between the side wall of the detection window and the shell, and the angle between the air inlet channel and the vertical direction is 30-60 degrees. A protective gas inlet is provided on the shell for introducing protective gas into the air inlet channel.

[0047] The semiconductor processing system provided by an embodiment of the present invention includes the above-mentioned substrate processing equipment, which introduces protective gas through a protective gas inlet on the shell, and the protective gas forms a gas protection layer at the detection window through the air inlet channel. During the etching process, the gas protection layer can prevent or reduce the etching gas or etching gas by-products from reaching the detection window, thereby avoiding the phenomenon of unstable signal reception and shutdown of the endpoint detection system caused by the accumulation of etching by-products on the detection window as the operation time of the reaction chamber increases. The angle between the air inlet channel and the vertical direction is 30-60 degrees, and the angle between the air inlet direction of the protective gas in the reaction chamber and the vertical direction is 30-60 degrees, thereby avoiding the protective gas from blowing directly onto the plasma, thereby improving the stability of the plasma in the reaction chamber.

[0048] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the above embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the above embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A substrate processing device, characterized in that: include: A reaction chamber and a detection portion provided on a side wall of the reaction chamber; The detection portion includes a shell connected to the reaction chamber and a detection window arranged in the shell. The detection window is used to obtain an optical signal in the reaction chamber to determine the etching end point in the reaction chamber. An air inlet channel connected to the reaction chamber is formed between the side wall of the detection window and the shell. The angle between the air inlet channel and the vertical direction is 30-60 degrees. A protective gas inlet is provided on the shell for introducing protective gas into the air inlet channel.

2. The substrate processing equipment according to claim 1, characterized in that A nozzle is provided in the shell, and the nozzle is used to evenly distribute the protective gas in the air inlet channel.

3. The substrate processing equipment according to claim 1, wherein: The included angle between the air inlet passage and the vertical direction is 45 degrees.

4. The substrate processing equipment according to claim 1, wherein The detection window includes a window glass and an optical fiber connected to the window glass. The window glass is used to receive the optical signal in the reaction chamber, and the optical fiber is used to connect to an endpoint detection device.

5. The substrate processing equipment according to claim 4, characterized in that The window glass has a receiving surface parallel to the side wall of the reaction chamber and an extension portion parallel to the inner wall of the shell. The receiving surface is used to obtain the optical signal in the reaction chamber. The air inlet channel is formed between the extension portion and the inner wall of the shell.

6. The substrate processing equipment according to claim 1, wherein A pipe joint is provided at the shielding gas inlet, and the pipe joint is used to be connected to a shielding gas supply device.

7. The substrate processing equipment according to any one of claims 1 to 6, characterized in that: A susceptor and a gas shower head are provided in the reaction chamber. The susceptor is used to carry a wafer, and the gas shower head is used to introduce reaction gas into the reaction chamber. A plasma processing area is located between the susceptor and the gas shower head.

8. The substrate processing equipment according to claim 7, wherein: The base is an electrostatic chuck, and a plasma confinement ring is arranged on the outer side of the base.

9. The substrate processing equipment according to claim 7, wherein: The protective gas is argon or helium.

10. A semiconductor processing system, characterized in that: The semiconductor processing system includes the substrate processing equipment according to any one of claims 1-9.

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