Three-phase discrete gallium nitride full-bridge inverter based on heat dissipation of one aluminum substrate

Abstract

The utility model belongs to the technical field of frequency converters, and discloses a three-phase discrete gallium nitride full-bridge inverter based on heat dissipation of an aluminum substrate, which comprises the aluminum substrate, six gallium nitride discrete devices and a frequency converter circuit board. The six gallium nitride discrete devices are respectively installed on the frequency converter circuit board, each gallium nitride discrete device is responsible for a switching function, and the six gallium nitride discrete devices are connected together through a conductive path on the frequency converter circuit board to form a three-phase full-bridge inverter. According to the scheme, all gallium nitride discrete devices are mounted on one aluminum substrate and then assembled on the frequency converter circuit board, so that a heat dissipation effect is achieved, integration of six discrete devices is realized, and manufacturability and processing efficiency are improved. And the heating value of GaN is smaller than that of an S device under the same switching frequency, so that an ideal heat dissipation effect can be completely achieved by adopting the aluminum substrate, and the volume and the weight of the frequency converter are reduced.

Description

Technical Field

[0001] The utility model relates to the technical field of frequency converters, and more specifically to a three-phase discrete gallium nitride full-bridge inverter based on an aluminum substrate for heat dissipation. Background Art

[0002] Washing machine inverters typically use intelligent power modules (IPMs) to achieve DC to three-phase AC inversion through sinusoidal pulse-width modulation. Currently, IPMs are typically integrated with three-phase, six-channel Si-based IGBTs or MOSFETs. Because IGBTs (insulated-gate bipolar transistors) and MOSFETs (metal-oxide-semiconductor field-effect transistors) generate significant heat during high-frequency switching, a large heat sink must be mounted on the surface of the IPM when in use.

[0003] However, the application of the heat sink increases the volume and weight of the inverter, and affects the assembly method and structural layout of the inverter, which is not conducive to the miniaturization development of the inverter. Utility Model Content

[0004] The purpose of the utility model is to solve the shortcomings of the prior art and to propose a three-phase discrete gallium nitride full-bridge inverter based on an aluminum substrate for heat dissipation.

[0005] In order to solve the above problems, the present invention adopts the following technical solutions:

[0006] A three-phase discrete GaN full-bridge inverter based on an aluminum substrate for heat dissipation, comprising an aluminum substrate, six discrete GaN devices, and an inverter circuit board.

[0007] The six GaN discrete devices are respectively mounted on a frequency converter circuit board, each GaN discrete device is responsible for a switch function, and the six GaN discrete devices are connected together through a conductive path on the frequency converter circuit board to form a three-phase full-bridge inverter;

[0008] The six GaN discrete devices are fixedly connected to the aluminum substrate via a thermally conductive interface material.

[0009] As a further description of the above technical solution: a plurality of heat sinks arranged at equal distances are provided on the side of the aluminum substrate away from the gallium nitride discrete device.

[0010] As a further description of the above technical solution: both sides of the heat sink are a sawtooth structure formed by continuous concave and convex.

[0011] As a further description of the above technical solution: the width of the heat sink decreases evenly from one end connected to the aluminum substrate to the other end.

[0012] As a further description of the above technical solution: the thermal interface material is thermal paste or thermal pad.

[0013] Compared with the prior art, the advantages of the present invention are:

[0014] This solution mounts all GaN discrete components onto an aluminum substrate, which is then assembled onto the inverter circuit board. This not only dissipates heat but also enables integration of six discrete components, improving manufacturability and processing efficiency. Furthermore, GaN generates less heat than Si devices at the same switching frequency, so the aluminum substrate achieves ideal heat dissipation, reducing the size and weight of the inverter. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 It is a structural diagram of the utility model;

[0016] Figure 2 It is a structural diagram of the utility model;

[0017] Figure 3 For this utility model Figure 2 Enlarged view of point A in the middle.

[0018] Description of the numbers in the figure:

[0019] 1. Aluminum substrate; 11. Heat sink; 2. GaN discrete device; 3. Inverter circuit board. DETAILED DESCRIPTION

[0020] The following will clearly and completely describe the technical solutions in the embodiments of the present invention in conjunction with the drawings in the embodiments of the present invention; it is obvious that the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0021] With the development of power electronics technology, SiC and GaN semiconductor devices are becoming increasingly mature. Compared with Si semiconductor devices, they have low switching losses, low heat generation, and low heat dissipation requirements. Therefore, the present invention is based on a three-phase discrete gallium nitride full-bridge inverter with heat dissipation on an aluminum substrate. Figure 1-3 , including an aluminum substrate 1, a gallium nitride discrete device 2 and an inverter circuit board 3.

[0022] In a three-phase power system, an inverter typically requires six switches to control the output of three-phase AC power. Each phase requires two switches to achieve a full-bridge configuration, so a three-phase inverter requires a total of six switches. Consequently, this embodiment includes six GaN discrete devices 2. These six GaN discrete devices 2 are mounted on the inverter circuit board 3, each performing a switch function. These six GaN discrete devices 2 are connected together via conductive paths on the inverter circuit board 3, forming the circuit topology of a three-phase full-bridge inverter. Each GaN discrete device 2 performs a switch function, and by controlling the state of these switches, DC to AC conversion can be achieved.

[0023] The six GaN discrete devices 2 are fixedly connected to the aluminum substrate 1 via a thermally conductive interface material; the aluminum substrate 1 provides excellent heat dissipation performance and can effectively conduct away the heat generated by the GaN discrete devices 2.

[0024] As can be seen from the above, this embodiment mounts all GaN discrete devices 2 onto an aluminum substrate 1, which is then assembled onto the inverter circuit board 3. This achieves both heat dissipation and integration of six discrete devices, improving manufacturability and processing efficiency. Furthermore, GaN generates less heat than Si devices at the same switching frequency. Therefore, the use of an aluminum substrate 1 fully achieves ideal heat dissipation, thereby reducing the size and weight of the inverter.

[0025] The thermal interface material is a thermal paste or a thermal pad to ensure that heat can be effectively transferred from the discrete device to the aluminum substrate 1. In addition, the GaN discrete device 2 can also be replaced by a SiC discrete device.

[0026] Furthermore, a plurality of heat sinks 11 arranged at equal intervals are provided on the side of the aluminum substrate 1 away from the GaN discrete device 2 to improve the heat dissipation effect.

[0027] Furthermore, the two sides of the heat sink 11 have a zigzag structure formed by continuous concave and convex shapes, which increases the heat dissipation area and improves heat dissipation efficiency. In addition, the width of the heat sink 11 decreases evenly from the end connected to the aluminum substrate 1 to the other end, which helps optimize air flow and further improves heat dissipation performance. It should be noted that the structure of the heat sink 11 only improves the shape of the heat sink 11 and does not increase the production cost of the heat sink 11. It is also suitable for standardized production of heat sinks 11.

[0028] As can be seen from the above, the heat generated by the GaN discrete device 2 is transferred to the aluminum substrate 1 through the thermal interface material, and then conducted through the aluminum substrate 1 to the heat sink 11. The heat sink 11 dissipates the heat through convection with the surrounding air, thereby reducing the temperature of the GaN discrete device 2.

[0029] The above description is merely a preferred embodiment of the present invention; however, the scope of protection of the present invention is not limited thereto. Any person skilled in the art who, within the technical scope disclosed in the present invention, makes equivalent substitutions or modifications based on the technical solutions and improved concepts of the present invention shall be covered by the scope of protection of the present invention.

Claims

1. A three-phase discrete GaN full-bridge inverter based on an aluminum substrate for heat dissipation, characterized by: It comprises an aluminum substrate (1), a gallium nitride discrete device (2) and a frequency converter circuit board (3), wherein the number of the gallium nitride discrete devices (2) is six; The six gallium nitride discrete devices (2) are respectively mounted on a frequency converter circuit board (3), each of the gallium nitride discrete devices (2) is responsible for a switch function, and the six gallium nitride discrete devices (2) are connected together through a conductive path on the frequency converter circuit board (3) to form a three-phase full-bridge inverter; The six gallium nitride discrete devices (2) are fixedly connected to the aluminum substrate (1) via a thermally conductive interface material; A plurality of equidistantly arranged heat sinks (11) are provided on a side of the aluminum substrate (1) away from the gallium nitride discrete device (2), and both sides of the heat sink (11) are in a sawtooth structure formed by continuous concave and convex portions; The width of the heat sink (11) decreases uniformly from one end connected to the aluminum substrate (1) to the other end.

2. The three-phase discrete GaN full-bridge inverter based on an aluminum substrate for heat dissipation according to claim 1, characterized in that: The thermal interface material is thermal paste or thermal pad.

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