Crystalline silicon cell electrode structure

Abstract

The utility model provides an electrode structure of a crystalline silicon cell. The electrode structure comprises a silicon wafer, a plurality of thin grid lines which are arranged on the surface of the silicon wafer in parallel, gradual change lines which are arranged on the surfaces of the thin grid lines, a plurality of anti-breaking grids which are respectively arranged on the surfaces of the thin grid lines, and a plurality of welding extension lines which are respectively arranged on the surfaces of the thin grid lines. According to the crystalline silicon battery electrode structure provided by the utility model, the plurality of fine grid lines are matched with the plurality of gradual change lines, the plurality of anti-breaking grids and the plurality of welding extension lines, and the design of a main grid is canceled, so that the shading area of the battery is increased, the generating capacity of the battery is increased, the cost of silver paste used for printing the main grid is reduced, and the production efficiency is improved. And the manufacturing cost of the crystalline silicon cell is reduced.

Description

Technical Field

[0001] The utility model relates to the field of crystalline silicon batteries, in particular to an electrode structure of a crystalline silicon battery. Background Art

[0002] Crystalline silicon cells generally refer to crystalline silicon solar cells. Solar energy is an inexhaustible and renewable energy source for mankind. It is also a clean energy source that does not produce any environmental pollution. Among the effective utilization of solar energy, solar photovoltaic utilization is the fastest-growing and most dynamic research field in recent years, and is one of the most anticipated projects. For this reason, people have studied and developed solar cells. The production of solar cells is mainly based on semiconductor materials. Its working principle is to use photoelectric materials to absorb light energy and then undergo photoelectron conversion reaction, depending on the materials used.

[0003] In crystalline silicon solar cells, busbars are usually metal lines used to collect current. There are usually multiple parallel main grids and multiple parallel fine grids. Traditional photovoltaic cells usually use 2 to 5 main grid lines, while multi-busbar technology can use 9 or even more main grid lines. These main grid lines are used to collect and conduct photogenerated current. More main grid lines disperse the current and reduce the current density of each grid line, thereby reducing ohmic losses and improving the fill factor and overall efficiency of the battery.

[0004] The design of the busbar, especially multiple busbars, reduces the shading area of ​​the crystalline silicon cell while increasing the manufacturing cost of the crystalline silicon cell.

[0005] Therefore, it is necessary to provide a crystalline silicon battery electrode structure to solve the above technical problems. Utility Model Content

[0006] The utility model provides a crystalline silicon battery electrode structure, which solves the problem that the existing main grid, especially the design of multiple main grids, reduces the shading area of ​​the crystalline silicon battery and increases the manufacturing cost of the crystalline silicon battery.

[0007] In order to solve the above technical problems, the present invention provides a crystalline silicon battery electrode structure, comprising:

[0008] silicon wafers;

[0009] A plurality of fine gate lines, wherein the plurality of fine gate lines are all arranged on the surface of the silicon wafer, the plurality of fine gate lines are arranged parallel to each other, and the surfaces of the plurality of fine gate lines are all provided with gradient lines;

[0010] A plurality of anti-breakage grids, each of which is disposed on a surface of the plurality of fine grid lines;

[0011] A plurality of welding extension lines are respectively arranged on the surfaces of the plurality of fine grid lines.

[0012] Preferably, the size of the silicon wafer is 182.2*191.6 mm, and the number of the fine gate lines is 164.

[0013] Preferably, the fine grid line spacing is 1.1663 mm, and the cutting spacing is 1.1663 mm.

[0014] Preferably, the welding extension line has a length of 4.665 mm and a width of 0.02 mm, and there are 80 pieces in 4 rows. The spacing between the multiple welding extension lines is 8.61 mm, and they are designed as wavy lines.

[0015] Preferably, both the welding extension line and the fine grid line are provided with a gradient line, the gradient line designed on the welding extension line has a size of 1.71*0.05, and the gradient line designed on the fine grid line has a size of 1.71*0.06.

[0016] Preferably, the anti-breakage grid has ten columns, which are designed to correspond to the intervals of the welding extension lines and have a width of 0.02 mm.

[0017] Preferably, a plurality of limiting grooves are provided inside the silicon wafer, the interiors of the plurality of limiting grooves are all slidably connected to limiting blocks, the surfaces of the inner walls of the plurality of limiting grooves are all fixedly connected to fixed blocks, and the interiors of the plurality of limiting blocks are all provided with fixing grooves.

[0018] Compared with related technologies, the crystalline silicon battery electrode structure provided by the present invention has the following beneficial effects:

[0019] The utility model provides a crystalline silicon battery electrode structure, which eliminates the main grid design by combining multiple fine grid lines with multiple gradient lines, multiple anti-break grids and multiple welding extension lines, thereby increasing the battery's shading area and the battery's power generation while reducing the cost of silver paste used for printing the main grid and lowering the manufacturing cost of the crystalline silicon battery. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a structural schematic diagram of a first embodiment of a crystalline silicon battery electrode structure provided by the present utility model;

[0021] Figure 2 for Figure 1 The structural diagram of the anti-break fence shown;

[0022] Figure 3 for Figure 1 The structural diagram of the welding extension line shown;

[0023] Figure 4 This is a structural schematic diagram of a second embodiment of a crystalline silicon battery electrode structure provided by the present utility model;

[0024] Figure 5 for Figure 4 The structural diagram of the limit block shown;

[0025] Figure 6 for Figure 4 An enlarged schematic diagram of part A is shown.

[0026] Numbers in the figure: 1, silicon wafer, 2, fine gate line, 3, gradient line, 4, anti-break gate, 5, welding extension line, 6, limit groove, 7, limit block, 8, fixed groove, 9, fixed block. DETAILED DESCRIPTION

[0027] The present invention will be further described below with reference to the accompanying drawings and implementation examples.

[0028] First embodiment

[0029] Please refer to Figure 1 、 Figure 2 and Figure 3 ,in, Figure 1 This is a structural schematic diagram of a first embodiment of a crystalline silicon battery electrode structure provided by the present utility model; Figure 2 for Figure 1 The structural diagram of the anti-break fence shown; Figure 3 for Figure 1 A crystalline silicon battery electrode structure, comprising:

[0030] Silicon wafer 1;

[0031] A plurality of fine gate lines 2, each of which is disposed on the surface of the silicon wafer, is parallel to each other, and has a gradient line 3 disposed on its surface;

[0032] A plurality of anti-breakage grids 4, wherein the plurality of anti-breakage grids 4 are respectively arranged on the surfaces of the plurality of fine grid lines 2;

[0033] A plurality of welding extension lines 5 are respectively arranged on the surfaces of the plurality of fine grid lines 2 .

[0034] The size of the silicon wafer 1 is 182.2*191.6 mm, and the number of the fine gate lines 2 is 164.

[0035] The spacing between the fine grid lines 2 is 1.1663 mm, and the cutting spacing is 1.1663 mm.

[0036] The welding extension line 5 has a length of 4.665 mm and a width of 0.02 mm, and there are 80 welding extension lines in 4 rows. The spacing between the welding extension lines 5 is 8.61 mm, and the welding extension lines are designed as wavy lines.

[0037] Gradient lines 3 are provided on both the welding extension lines 5 and the thin grid lines 2. The gradient lines 3 designed on the welding extension lines 5 are sized 1.71*0.05, and the gradient lines 3 designed on the thin grid lines 2 are sized 1.71*0.06.

[0038] The anti-breakage fence 4 has a total of ten rows, which are designed to correspond to the intervals of the welding extension lines 5 and have a width of 0.02 mm.

[0039] The entire silicon wafer 1 consists of two symmetrical halves, each with a plurality of fine grid lines 2 arranged parallel to one another. Gradient lines 3 are evenly distributed on the fine grid lines 2 and are prismatic or polygonal in shape. The fine grid lines 2 extend through the gradient lines and connect to each other.

[0040] The welding extension line 5 that runs through the outermost line of the pattern is perpendicular to the thin grid lines 2 and intersects with the five thin grid lines 2. The welding extension line 5 is designed as a wavy line and has a gradient line 3 on it.

[0041] The part where the fine grid lines 2 are vertically connected to each other is designed with an anti-breakage grid 4 structure, which is designed to be spaced apart corresponding to the welding extension lines 5 and is connected to the outermost side of the gradient line 3.

[0042] Compared with related technologies, the crystalline silicon battery electrode structure provided by the present invention has the following beneficial effects:

[0043] The utility model provides a crystalline silicon battery electrode structure, which replaces the previous main grid by using multiple fine grid lines 2 in combination with multiple gradient lines 3, multiple anti-break grids 4 and multiple welding extension lines 5. Therefore, by eliminating the design of the main grid, the shading area of ​​the battery is increased, the power generation of the battery is increased, and the cost of silver paste used for printing the main grid is reduced.

[0044] Second embodiment

[0045] Please refer to Figure 4 、 Figure 5 and Figure 6 Based on the crystalline silicon battery electrode structure provided in the first embodiment of this application, the second embodiment of this application proposes another crystalline silicon battery electrode structure. The second embodiment is merely a preferred embodiment of the first embodiment, and the implementation of the second embodiment will not affect the independent implementation of the first embodiment.

[0046] Specifically, the difference of the crystalline silicon battery electrode structure provided in the second embodiment of the present application is that, in a crystalline silicon battery electrode structure, a plurality of limiting grooves 6 are opened inside the silicon wafer 1, and the interiors of the plurality of limiting grooves 6 are all slidably connected to limiting blocks 7, and the surfaces of the inner walls of the plurality of limiting grooves 6 are fixedly connected to fixed blocks 9, and the interiors of the plurality of limiting blocks 7 are all provided with fixing grooves 8.

[0047] The top and one side of the silicon wafer 1 are fixedly connected with multiple limit blocks 7, and the top and one opposite side are provided with multiple limit grooves 6, so that when two silicon wafers 1 are merged, the contact area between the two silicon wafers 1 is increased, thereby enhancing the fixing effect.

[0048] The fixing block 9 is semi-cylindrical and made of rubber. After the limit block 7 enters the interior of the limit groove 6, the fixing block 9 is deformed. After the limit block 7 moves to the appropriate position, the fixing block 9 returns to the interior of the fixing groove 8. The fixing groove 8 is a semi-cylindrical groove that matches the fixing block 9.

[0049] After the plurality of limiting blocks 7 respectively enter the interiors of the plurality of limiting grooves 6 , and the plurality of fixing blocks 9 enter the interiors of the plurality of fixing grooves 8 , the limiting blocks 7 are limited, thereby increasing the fixing effect.

[0050] The working principle of the crystalline silicon battery electrode structure provided by the utility model is as follows:

[0051] When in use, by moving one silicon wafer 1 to one side, multiple limit blocks 7 are moved to one side until they are aligned with multiple limit grooves 6 on one side of another silicon wafer 1, and then the silicon wafer 1 is moved to one side to drive multiple limit blocks 7 to enter the interior of the multiple limit grooves 6 respectively, thereby increasing the contact area between the two silicon wafers 1.

[0052] Compared with related technologies, the crystalline silicon battery electrode structure provided by the present invention has the following beneficial effects:

[0053] The utility model provides a crystalline silicon battery electrode structure, which increases the contact area between the two silicon wafers 1 when installing them through multiple limiting grooves 6 and multiple limiting blocks 7, thereby improving the fixing effect.

[0054] The above description is merely an embodiment of the present invention and does not limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made by using the contents of the description and drawings of the present invention, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A crystalline silicon battery electrode structure, characterized in that: include: silicon wafers; A plurality of fine gate lines, wherein the plurality of fine gate lines are all arranged on the surface of the silicon wafer, the plurality of fine gate lines are arranged parallel to each other, and the surfaces of the plurality of fine gate lines are all provided with gradient lines; A plurality of anti-breakage grids, each of which is disposed on a surface of the plurality of fine grid lines; A plurality of welding extension lines are respectively arranged on the surfaces of the plurality of fine grid lines.

2. A crystalline silicon battery electrode structure according to claim 1, characterized in that: The size of the silicon wafer is 182.2*191.6 mm, and the number of the fine gate lines is 164.

3. The crystalline silicon battery electrode structure according to claim 1, characterized in that: The fine grid line spacing is 1.1663 mm, and the cutting spacing is 1.1663 mm.

4. The crystalline silicon battery electrode structure according to claim 1, characterized in that: The welding extension line is 4.665 mm long and 0.02 mm wide, with 80 pieces in 4 rows. The spacing between multiple welding extension lines is 8.61 mm, with a wavy line design.

5. The crystalline silicon battery electrode structure according to claim 1, characterized in that: Gradient lines are provided on both the welding extension line and the fine grid line. The gradient line designed on the welding extension line has a size of 1.71*0.05, and the gradient line designed on the fine grid line has a size of 1.71*0.

06.

6. The crystalline silicon battery electrode structure according to claim 1, characterized in that: The anti-breakage grid has a total of ten rows, corresponding to the interval design of the welding extension line, and has a width of 0.02mm.

7. The crystalline silicon battery electrode structure according to claim 2, characterized in that: A plurality of limiting grooves are provided inside the silicon wafer, and the interiors of the plurality of limiting grooves are slidably connected to limiting blocks. The surfaces of the inner walls of the plurality of limiting grooves are fixedly connected to fixed blocks, and the interiors of the plurality of limiting blocks are provided with fixing grooves.

Images