Atomizing core and atomizing device

Abstract

The utility model discloses an atomizing core and an atomizing device, and the atomizing core comprises a semiconductor substrate which is provided with a plurality of first micropores; the cover plate is arranged on one side of the semiconductor substrate, and the cover plate is provided with a plurality of second micropores; the second micropores are communicated with the first micropores in a one-to-one correspondence manner; the semiconductor heating layer is arranged on the surface, far away from the cover plate, of the semiconductor substrate; the resistivity of the semiconductor heating layer is smaller than that of the semiconductor substrate; the electrode is arranged on one side, far away from the cover plate, of the semiconductor substrate and is electrically connected with the semiconductor heating layer; wherein the surface, close to the cover plate, of the semiconductor substrate and / or the surface, close to the semiconductor substrate, of the cover plate is provided with a plurality of microgrooves, and the microgrooves are communicated with the first micropores. According to the atomizing core, the combining capacity of the heating element and the flow guide element is improved, and the micro-grooves are formed in the atomizing core so that bubbles generated by the micro-holes in the atomizing core can be guided out.

Description

Technical Field

[0001] The present application relates to the technical field of atomizer components, and in particular to an atomizer core and an atomizer device. Background Art

[0002] The core component of an atomizer is the atomizer assembly, which converts the stored aerosol into a vaporized form that can be inhaled by the user. A typical atomizer assembly has an atomizer core within the aerosol storage chamber, which generates heat to atomize the aerosol. The atomizer core typically uses cotton or ceramic materials as a liquid-conducting element. Cotton materials include, but are not limited to, pure cotton fibers and linen. The heating element is made of metal materials such as printed thick film, thin film, metal mesh, and spring wire. Furthermore, the atomizer core typically has multiple circular holes on the body to aid in liquid conduction.

[0003] However, the above structure has the following disadvantages: First, since the heating element is made of metal material, there is a risk of falling off due to loose fit with the liquid-conducting element; second, when the heating element with a porous structure is in use, the microchannel formed by its circular holes will produce serious back-gas phenomenon at the microscale during atomization and boiling. The back-gas phenomenon is due to the different wall temperatures at different positions in the microchannel, resulting in different flow shapes. For example, the boiling state at the position with high temperature is bubbly flow, elastic flow (or plug flow), while the boiling state at the position with lower temperature is annular flow or mist flow. The characteristics of bubbly flow and elastic flow (or plug flow) are that a large number of bubbles will be generated in the microchannel during the boiling process, and enter the liquid storage cavity along the microchannel, resulting in the back-gas phenomenon. The bubbles returning to the liquid storage cavity have a greater risk of blocking the liquid absorption surface of the heating element, resulting in poor liquid discharge, and then causing the heating element to burn dry. Utility Model Content

[0004] The embodiments of the present application provide an atomizer core and an atomizer device, which can avoid the occurrence of backflow by optimizing the structure or material of the heating element in the atomizer core and the internal structure of the atomizer core.

[0005] In a first aspect, an embodiment of the present application provides an atomizer core, comprising:

[0006] A semiconductor substrate having a plurality of first micro-holes;

[0007] a cover plate, disposed on one side of the semiconductor substrate, the cover plate having a plurality of second micropores; the second micropores being connected to the first micropores in a one-to-one correspondence;

[0008] a semiconductor heating layer, disposed on a surface of the semiconductor substrate away from the cover plate; the resistivity of the semiconductor heating layer is less than the resistivity of the semiconductor substrate;

[0009] an electrode, disposed on a side of the semiconductor substrate away from the cover plate and electrically connected to the semiconductor heating layer;

[0010] The surface of the semiconductor substrate close to the cover plate and / or the surface of the cover plate close to the semiconductor substrate has a plurality of microgrooves, and each of the microgrooves is connected to a plurality of the first micropores.

[0011] In some embodiments, the plurality of first micropores are arranged in an array; each of the microgrooves connects the first micropores in the same row or column.

[0012] In some embodiments, the width of the microgroove is greater than or equal to half the pore size of the first micropore, and the width of the microgroove is less than or equal to the pore size of the first micropore.

[0013] In some embodiments, the first micropores in the same row have the same shape and size, and the first micropores in the same column have different shapes and / or sizes; each of the microgrooves is connected to the first micropores in the same column.

[0014] In some embodiments, the depth and / or width of the microgroove gradually decreases from one end to the other end of the microgroove; and the size of adjacent first micropores gradually decreases.

[0015] In some embodiments, the cover plate further has an exhaust hole on at least one side of the area where the second micropores are formed, and the microgrooves are connected to the exhaust hole; the aperture of the exhaust hole is greater than or equal to three times the aperture of the second micropores.

[0016] In some embodiments, the cover plate has exhaust holes on opposite sides of the row direction of the plurality of second micropores; the exhaust holes at both ends are respectively connected to different microgrooves; from one end of the microgroove to the other end, the width of the microgroove gradually decreases, or the width of the microgroove gradually increases.

[0017] In some embodiments, the semiconductor substrate is an intrinsic silicon substrate; wherein the semiconductor heating layer is a doped conductive silicon substrate, the surface of the intrinsic silicon substrate away from the cover plate has a receiving groove, and the conductive silicon substrate is embedded in the receiving groove; or, the semiconductor heating layer is a conductive silicon layer formed by doping on the surface of the intrinsic silicon substrate away from the cover plate.

[0018] In a second aspect, an embodiment of the present application provides an atomization device, comprising:

[0019] a liquid storage chamber for storing an aerosol-generating matrix;

[0020] An atomizing core is communicated with the liquid storage chamber and is used to atomize the aerosol-generating matrix from the liquid storage chamber; the atomizing core is any one of the atomizing cores described above.

[0021] In some embodiments, the atomizer core is arranged parallel to the axial direction of the atomizer assembly, and the depth and / or width of the microgroove gradually decreases from one end of the atomizer assembly close to the mouthpiece of the atomizer assembly of the atomizer device to the end of the mouthpiece away from the atomizer assembly; and the size of the first micropore gradually decreases.

[0022] In some embodiments, the atomization device is a battery-free atomizer.

[0023] In some embodiments, the atomization device is an atomization device having a battery assembly, and the battery assembly is used to provide energy for the operation of the atomization assembly.

[0024] The beneficial effects of this application are:

[0025] The present application replaces the existing metal heating element with a semiconductor heating layer, thereby improving the bonding ability between the heating element and the guide element and reducing the risk of the heating element falling off.

[0026] The present application provides a guidance function for the bubbles entering the microgrooves from the first micropores by configuring the atomizing core as a multi-layered and porous structure and providing microgrooves between the silicon substrate and the cover plate, thereby helping to guide the movement trend of the bubbles in the microgrooves, ensuring that the bubbles are guided out of the microgrooves, and avoiding the occurrence of back-gas phenomenon. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0028] Figure 1 This is a schematic diagram of the explosion structure of the atomizer core of an embodiment of the present application;

[0029] Figure 2 This is a schematic cross-sectional view of the structure of the atomizer core of an embodiment of the present application;

[0030] Figure 3 This is a schematic cross-sectional view of the structure of the atomizer core of another embodiment of the present application;

[0031] Figure 4 This is a schematic cross-sectional view of the structure of an atomizer core according to another embodiment of the present application;

[0032] Figure 5Schematic diagram of the arrangement of the first microholes and microgrooves in one embodiment of the present application;

[0033] Figure 6 is a schematic diagram of the arrangement of first microholes and microgrooves in another embodiment of the present application;

[0034] Figure 7 This is a schematic diagram of the arrangement of the first microholes and microgrooves in another embodiment of the present application;

[0035] Figure 8 This is a schematic diagram of the arrangement of the first microholes and microgrooves in another embodiment of the present application;

[0036] Figure 9 Schematic diagram of the arrangement of the first microholes and microgrooves in one embodiment of the present application;

[0037] Figure 10 is a schematic diagram of the arrangement of first microholes and microgrooves in another embodiment of the present application;

[0038] Figure 11 This is a schematic diagram of the arrangement of the first microholes and microgrooves in another embodiment of the present application;

[0039] Figure 12 This is a schematic diagram of an exhaust hole in one embodiment of the present application;

[0040] Figure 13 This is a schematic cross-sectional view of the atomizer core structure of another embodiment of the present application;

[0041] Figure 14 This is a schematic diagram of the microgroove arrangement in one embodiment of the present application;

[0042] Figure 15 This is a schematic structural diagram of an atomizing device according to an embodiment of the present application;

[0043] Figure 16 is a structural schematic diagram of an atomizing device in another embodiment of the present application;

[0044] Figure 17 It is a structural schematic diagram of an atomization device in another embodiment of the present application.

[0045] Description of reference numerals:

[0046] 10-semiconductor substrate; 11-first micropore; 20-cover plate; 21-second micropore; 30-semiconductor heating layer; 40-electrode; 50-microgroove; 60-exhaust hole; 70-liquid storage chamber; 80-atomizer core; 90-nozzle; 100-atomizer assembly; 200-battery assembly. DETAILED DESCRIPTION

[0047] The following will be combined with the drawings in the embodiments of this application to clearly and completely describe the technical solutions in the embodiments of this application. Obviously, the embodiments described are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0048] Please refer to Figures 1 to 4 , the embodiment of the present application provides an atomizer core, comprising:

[0049] The semiconductor substrate 10 has a plurality of first micro-holes 11;

[0050] The cover plate 20 is disposed on one side of the semiconductor substrate 10 and has a plurality of second micropores 21 ; the second micropores 21 are connected to the first micropores 11 in a one-to-one correspondence;

[0051] The semiconductor heating layer 30 is disposed on a surface of the semiconductor substrate 10 away from the cover plate 20 ; the resistivity of the semiconductor heating layer 30 is lower than that of the semiconductor substrate 10 ;

[0052] The electrode 40 is disposed on a side of the semiconductor substrate 10 away from the cover plate 20 and is electrically connected to the semiconductor heating layer 30;

[0053] The surface of the semiconductor substrate 10 close to the cover plate 20 and / or the surface of the cover plate 20 close to the semiconductor substrate 10 has a plurality of micro grooves 50 (the micro grooves 50 are formed on the semiconductor substrate 10 and the cover plate 20 is formed on the semiconductor substrate 10). Figure 1 The dotted line in the figure indicates the position of the microgroove 50 corresponding to the first micropore 11, and it is not limited to setting the microgroove 50 on the semiconductor substrate 10. Each microgroove 50 connects multiple first micropores 11.

[0054] In this embodiment, the semiconductor substrate 10 has a plurality of first micropores 11 for conducting liquid. The first micropores 11 may be straight through holes perpendicular to the semiconductor substrate 10 .

[0055] In this embodiment, the cover plate 20 is used to be installed in combination with the semiconductor substrate 10 to enhance the strength of the atomizer core itself and improve the safety and stability of the atomizer core during use. Specifically, by installing a cover plate 20 that is different from the semiconductor substrate 10, since the thermal conductivity of the cover plate 20 is lower than that of the semiconductor substrate 10, during the use of the atomizer core, its heat is transferred from the semiconductor substrate 10 to the cover plate 20. The cover plate 20 delays the heat transfer, reduces the impact of the atomizer core on surrounding components due to heat generation, especially the atomization medium in the liquid storage chamber, and thus reduces the safety issues of the atomizer core during use. In one embodiment, a mounting groove is provided on the cover plate 20, and the semiconductor substrate 10 is embedded in the cover plate 20 through the mounting groove.

[0056] In this embodiment, the semiconductor heating layer 30 is the heating element of the atomizer core, which is achieved by making the resistivity of the semiconductor heating layer 30 lower than the resistivity of the semiconductor substrate 10. In this embodiment, the semiconductor heating layer 30 replaces the existing metal heating element, demetallizing the heating element, thereby avoiding problems such as metal corrosion during atomization, greatly reducing or even eliminating heavy metals, and improving safety. Since the semiconductor heating layer 30 and the semiconductor substrate 10 are made of similar materials and have similar expansion coefficients, the bonding ability between the semiconductor heating layer 30 and the semiconductor substrate 10 is higher than that of metal materials, and the stability is higher after installation, which reduces the risk of the heating element falling and improves the safety of the atomizer core.

[0057] In this embodiment, since the semiconductor heating layer 30 has higher thermal conductivity and thinner thickness than metal, the volume of the atomizer core is smaller. At the same time, the thinner heating layer 30 will cause the bubbles generated on the surface of the heating layer 30 to more easily enter the semiconductor substrate 10, thereby causing the occurrence of backgassing. Therefore, it is necessary to design an anti-backgassing structure to prevent the occurrence of this phenomenon. The microgroove 50 in this embodiment can serve as an anti-backgassing structure of the atomizer core, guiding the gas in the first through hole 11 into the microgroove 50 and then out, to prevent the gas from continuing to return to the liquid storage chamber.

[0058] In this embodiment, a plurality of first micropores 11 and a plurality of second micropores 21 are provided on the semiconductor substrate 10 and the cover plate 20 respectively, and the two are connected one by one, and are both oil-conducting structures of the atomizing core, for improving the liquid-conducting ability and atomization effect of the atomizing core. On this basis, in order to prevent the bubbles formed in the first micropores 11 during the heating process of the atomizing core from entering the liquid storage cavity storing the aerosol matrix that can be atomized along the second micropores 21, a plurality of microgrooves 50 are provided between the semiconductor substrate 10 and the cover plate 20, and one side of each microgroove 50 is connected to a plurality of first micropores 11. Help the microgrooves 50 to guide and discharge the bubbles generated in the first micropores 11, and prevent the bubbles from escaping from the second micropores 21 into the interior of the liquid storage cavity. In one example, as Figure 2 As shown, the semiconductor substrate 10 and the cover plate 20 are respectively provided with micro grooves 50. When installed, the micro grooves 50 of the semiconductor substrate 10 and the micro grooves 50 of the cover plate 20 cooperate with each other to form a gap. Figure 3 As shown, micro grooves 50 are only provided on the semiconductor substrate 10. In another example, as shown in FIG. Figure 4 As shown, the micro grooves 50 are provided only on the cover plate 20 .

[0059] In this embodiment, the semiconductor substrate 10 and cover plate 20 can be etched using MEMS processing technology to form the first micropores 11 and second micropores 21. The micropore structure makes the liquid guide path short and straight, which is conducive to the transmission of flavors and fragrances in the e-liquid, ensuring high transmission efficiency and good taste reproduction. Because the structure is very thin and there is almost no internal oil storage space, each puff of atomized e-liquid is the e-liquid in the liquid storage chamber, ensuring consistency and freshness of taste. In one embodiment, the semiconductor heating layer 30 also uses MEMS processing technology to etch an array of micropores on the semiconductor heating layer 30.

[0060] MEMS, short for Micro Electro Mechanical Systems, is a term for systems that process various input and output signals using tiny three-dimensional structures. MEMS processes are based on conventional semiconductor process flows, including film formation, photolithography, and etching.

[0061] In this embodiment, the atomizer core is configured as a laminated structure, namely, a laminated combination of a cover plate 20, a semiconductor substrate 10, a semiconductor heating layer 30, and an electrode 40, and is processed and packaged using semiconductor technology, so that the atomizer core can be produced in a modular manner.

[0062] In one embodiment, please refer to Figures 5 and 6 ( Figures 5 and 6 The dotted lines in the figure indicate the positions of the microgrooves 50 corresponding to the first micropores 11), and the plurality of first micropores 11 are arranged in an array; each microgroove 50 is connected to the first micropores 11 in the same row or column. Figure 5 As shown, the microgrooves 50 are connected to the first micropores 11 in the same row. Figure 6 As shown, the microgrooves 50 are connected to the first micropores 11 in the same row. The width of the microgrooves 50 can be greater than the pore diameter of the first micropores 11.

[0063] The microgrooves 50 connecting the first micropores 11 in the same row or column serve as guides and exhaust for the plurality of first micropores 11 in the row or column. In an embodiment of the present application, the microgrooves 50 connecting the first micropores 11 in the same row and the microgrooves 50 connecting the first micropores 11 in the same column are simultaneously provided. In other embodiments, the microgrooves 50 connect to the plurality of first micropores 11 at intersections on the arrayed micropores, for example, the microgrooves 50 are configured as cross-shaped microgrooves 50.

[0064] In one embodiment, please refer to Figure 7 ( Figure 7The dotted line in the figure indicates the position of the microgroove 50 corresponding to the first micropore 11 ), the width of the microgroove 50 is greater than or equal to half the aperture of the first micropore 11 , and the width of the microgroove 50 is less than or equal to the aperture of the first micropore 11 .

[0065] In this embodiment, the width of microgrooves 50 is limited within the aperture range of the first micropore 11. The reason is that the guiding exhaust effect of microgrooves 50 is affected by the relationship between the width of microgrooves 50 and the aperture of the first micropore 11. When the width of microgrooves 50 is too large, that is, the width of microgrooves 50 is greater than the aperture of the first micropore 11, when the bubbles generated in the first micropore 11 enter the microgrooves 50, due to the excessive internal space of microgrooves 50, the bubbles may stay in the microgrooves 50 for a long time without being derived, which has an impact or obstruction on the subsequent bubble introduction into the microgrooves 50 of the first micropore 11; and when the width of microgrooves 50 is too small, that is, the width of microgrooves 50 is less than half the aperture of the first micropore 11, the bubbles generated in the first micropore 11 are difficult to enter the microgrooves 50 smoothly, and are hindered to stay in the first micropore 11, which easily causes the first micropore 11 to be clogged or even blocked by bubbles. Therefore, the arrangement range of the microgrooves 50 can ensure that the bubbles can smoothly enter the microgrooves 50 and be guided out by the microgrooves 50 .

[0066] In one embodiment, please refer to Figures 8 to 11 The multiple first micropores 11 located in the same row have the same shape and size, and the multiple first micropores 11 located in the same column have different shapes and / or sizes; each microgroove 50 is connected to the first micropores 11 located in the same column.

[0067] In this embodiment, the purpose of setting the size arrangement of the first micropores 11 in this way is to optimize the heating efficiency of the atomizer core at different positions, thereby improving the atomization efficiency of the atomizer core. Specifically, at positions where the first micropores 11 are larger in size, the core wall of the atomizer core (including the material thickness between adjacent first micropores 11 and the material thickness at the edge of the first micropore 11 reaching the semiconductor substrate 10) is relatively thinner, so that the resistance at this position is higher than the resistance at positions where the first micropores 11 are smaller in size, thereby making the heating efficiency at this position higher and the temperature higher, thereby improving the atomization efficiency of the atomizer core. In the actual application of the atomizer core, by utilizing this structure, at positions closer to the liquid storage chamber, or closer to the nozzle, or at positions where the heating temperature needs to be increased according to the structure of the actual atomizer device, the heating efficiency at the position where the structure is set can be effectively improved, thereby improving the atomization efficiency. Furthermore, since the shapes and / or sizes of the first micropores 11 in the same column connected by the microgroove 50 are different, the shapes and / or sizes of the bubbles entering the microgroove 50 are different, and the bubbles in the microgroove 50 move at different speeds in the extension direction of the microgroove 50, which is conducive to the bubbles in the microgroove 50 moving toward both ends along the extension direction of the microgroove 50, thereby being discharged.

[0068] Similarly, in one example, it can also be set as follows: the shapes and sizes of multiple first micropores 11 located in the same column are the same, and the shapes and / or sizes of multiple first micropores 11 located in the same row are different; each microgroove 50 is connected to the first micropores 11 located in the same row.

[0069] In one example, if Figure 8 As shown, the first micropores 11 in the same row have the same shape and size, and the first micropores 11 in the same column have the same shape but different sizes. Each microgroove 50 is connected to the first micropores 11 in the same column. In this example, each first micropore 11 is a circular hole with a regular shape. In this example, Figure 8 As shown, the microgrooves 50 are arranged perpendicular to the straight-line distance between the two electrodes 40, further increasing the resistance to current transfer between the electrodes 40, thereby improving heating efficiency. It should be noted that the electrodes 40 shown in the figure only represent the positional relationship between the electrodes 40 relative to the microgrooves 50 and the first micropores 11, and do not indicate that the electrodes 40 are disposed on the semiconductor substrate 10.

[0070] In another example, Figure 9 As shown, the first micropores 11 in the same column have the same shape and size, and the first micropores 11 in the same row have the same shape but different sizes. Each microgroove 50 is connected to the first micropores 11 in the same row. In this example, each first micropore 11 is a circular hole with a regular shape. In this example, Figure 9 As shown, the microgrooves 50 are arranged parallel to the straight-line distance between the two electrodes 40. The arrangement of the microgrooves 50 makes the groove wall between the two electrodes 40 thinner, thereby increasing the resistance between them and improving the heating efficiency. It should be noted that the electrodes 40 shown in the figure only represent the positional relationship between the electrodes 40 and the microgrooves 50 and the first micropores 11, and do not indicate that the electrodes 40 are arranged on the semiconductor substrate 10.

[0071] In another example, Figure 10 As shown, the shapes and sizes of the multiple first micropores 11 in the same row are the same, and the shapes and sizes of the multiple first micropores 11 in the same column are different, and each microgroove 50 is connected to the first micropores 11 in the same column. In this example, the shapes of the first micropores 11 in the same row include but are not limited to regular polygonal holes with an even number of sides (including hexagonal holes and octagonal holes, etc.), circular holes, cross-shaped holes, star-shaped holes, and fork-shaped holes. In this example, as shown in FIG. Figure 10As shown, the microgrooves 50 are arranged perpendicular to the straight-line distance between the two electrodes 40, further increasing the resistance to current transfer between the electrodes 40, thereby improving heating efficiency. It should be noted that the electrodes 40 shown in the figure only represent the positional relationship between the electrodes 40 relative to the microgrooves 50 and the first micropores 11, and do not indicate that the electrodes 40 are disposed on the semiconductor substrate 10.

[0072] In another example, Figure 11 As shown, the shapes and sizes of the multiple first micropores 11 in the same column are the same, and the shapes and sizes of the multiple first micropores 11 in the same row are different, and each microgroove 50 is connected to the first micropores 11 in the same row. In this example, the shapes of the first micropores 11 in the same row include but are not limited to regular polygonal holes with an even number of sides (including hexagonal holes and octagonal holes, etc.), circular holes, cross-shaped holes, star-shaped holes, and fork-shaped holes. In this example, as shown in FIG. Figure 11 As shown, the microgrooves 50 are arranged parallel to the straight-line distance between the two electrodes 40. The arrangement of the microgrooves 50 makes the groove wall between the two electrodes 40 thinner, thereby increasing the resistance between them and improving the heating efficiency. It should be noted that the electrodes 40 shown in the figure only represent the positional relationship between the electrodes 40 and the microgrooves 50 and the first micropores 11, and do not indicate that the electrodes 40 are arranged on the semiconductor substrate 10.

[0073] In the above example, the purpose of providing holes of various shapes is to increase the surface area of ​​the inner wall of first micropore 11, thereby improving heat exchange. Furthermore, because bubbles formed within the holes are generally circular or nearly circular, they tend to settle within the circular holes and fill them entirely. Non-circular holes, or even holes that deviate further from circular shapes, allow bubbles to more easily pass through the microchannels within them, making them less likely to cause bubble blockage. This prevents bubbles from clogging or even blocking first micropore 11, ensuring normal liquid supply.

[0074] In some embodiments, please refer to Figures 8 to 11 From one end to the other end of the microgroove 50 , the depth and / or width of the microgroove 50 gradually decreases, and the size of the adjacent first microholes 11 gradually decreases.

[0075] Specifically, the purpose of the above arrangement is to make the size of the microgrooves 50 and the size of the first micropores 11 change simultaneously, further ensuring that bubbles in each first micropore 11 connected to the same microgrooves 50 can smoothly enter and be discharged from the first microgrooves 50. The depth and / or width of the microgrooves 50 gradually decrease, making it easier for bubbles that enter the microgrooves 50 to move to the wide area of ​​the microgrooves 50, guiding the bubbles to be discharged from the microgrooves 50.

[0076] Similarly, the size of the microgrooves 50 at different positions also affects the groove wall size of the atomizer core at the corresponding position, that is, it affects the material thickness between adjacent microgrooves 50, and affects the material thickness of the microgrooves 50 reaching the edge of the semiconductor substrate 10 or the cover plate 20, thereby affecting the heating efficiency of the corresponding position. This setting can further improve the efficiency of heat transfer or heating.

[0077] In one example, in combination with the above embodiments, the size relationship between the microgroove 50 and the first micropore 11 can be further set, such as provided above: the width of the microgroove 50 is greater than or equal to half the aperture of the first micropore 11, and the width of the microgroove 50 is less than or equal to the aperture of the first micropore 11.

[0078] In one embodiment, please refer to Figures 12 to 13 The cover plate 20 further has an exhaust hole 60 on at least one side of the area where the second micropores 21 are opened, and the microgrooves 50 are connected to the exhaust hole 60; the aperture of the exhaust hole 60 is greater than or equal to three times the aperture of the second micropores 21.

[0079] The vent 60 serves to discharge the gas in the microgrooves 50. The size relationship between the vent 60 and the second micropore 21 is designed to make it easier for the gas in the microgrooves 50 to be discharged through the vent 60, thereby reducing the gas remaining in the microgrooves 50 and helping the bubbles in the first micropore 11 to move into the microgrooves 50. Figure 12 In the figure, only dotted lines are used to indicate that the position of the microgroove 50 corresponds to the first micropore 11 and the vent 60 and that the microgroove 50 and the vent 60 are in communication.

[0080] In one embodiment, please refer to Figure 14 The cover plate 20 has exhaust holes 60 on opposite sides of the row direction of the plurality of second micropores 21; the exhaust holes 60 at both ends are respectively connected to different microgrooves 50; from one end to the other end of the microgroove 50, the width of the microgroove 50 gradually decreases or the width of the microgroove 50 gradually increases.

[0081] Through the arrangement of this embodiment, in a certain microgroove 50 , bubbles in the connected first micropores 11 will spontaneously move toward the wider end of the microgroove 50 after entering the microgroove 50 and be discharged from the connected exhaust hole 60 .

[0082] In one example, the exhaust hole 60 is configured as a long strip-shaped hole. In this case, the distance between two symmetrical long sides of the exhaust hole 60 is greater than or equal to three times the aperture of the second micropore 21 .

[0083] Please continue to refer to Figure 14, it can be further configured as follows: the width of the microgrooves 50 located in odd-numbered rows gradually decreases from one end of the microgrooves 50 to the other end; the width of the microgrooves 50 located in even-numbered rows gradually increases from one end of the microgrooves 50 to the other end; only the end of the microgrooves 50 with a larger width is connected to the exhaust hole 60.

[0084] In this embodiment, the arrangement of the micro grooves 50 is further optimized, so that the overall heating efficiency of the atomizer core is more uniform and the exhaust efficiency is improved. Figure 14 It should be noted that the dotted line portion only indicates the positional relationship between the microgroove 50 and the second micropore, and indicates the communication between the microgroove 50 and the vent 60 , and does not indicate that the microgroove 50 is provided on the cover plate 20 .

[0085] In one embodiment, the semiconductor substrate 10 is an intrinsic silicon substrate; wherein the semiconductor heating layer 30 is a doped conductive silicon substrate, the surface of the intrinsic silicon substrate away from the cover plate 20 has a receiving groove, and the conductive silicon substrate is embedded in the receiving groove; or, the semiconductor heating layer 30 is a conductive silicon layer formed by doping on the surface of the intrinsic silicon substrate away from the cover plate 20.

[0086] Among them, the semiconductor substrate 10 and the semiconductor heating layer 30 are both made of wafer-level silicon wafer materials. Using semiconductor technology, the silicon wafer is doped to make the single-crystalline silicon conductive. By controlling the amount of doping, the resistance can be customized and can replace the traditional metal heating element. In addition, the conductive silicon substrate can be independently manufactured from the intrinsic silicon substrate and then the two are assembled. It can also be directly doped on a whole silicon wafer without separate processing.

[0087] In one example, the pore size of the first micropore 11 or the second micropore 21 ranges from 5 to 100 μm.

[0088] In another example, the pore size of the first micropore 11 or the second micropore 21 ranges from 10 to 50 μm.

[0089] In yet another example, the pore size ranges of the first micropore 11 or the second micropore 21 include 5 um, 10 um, 25 um, 50 um, 75 um, 90 um, and 100 um.

[0090] In one example, the width of the microgroove 50 is half of the first aperture, and the depth of the microgroove 50 is 1 μm.

[0091] In one example, the cover plate 20 is a glass substrate or a quartz substrate.

[0092] In another embodiment of the present application, please refer to Figure 15 , provides an atomization device for an electronic atomization device, comprising:

[0093] a liquid storage chamber 70 for storing an aerosol-generating matrix;

[0094] The atomizing core 80 is communicated with the liquid storage chamber 70 and is used to atomize the aerosol-generating matrix from the liquid storage chamber 70 ; the atomizing core 80 is any of the atomizing cores described above.

[0095] During use, the aerosol-generating matrix in the liquid storage chamber 70 enters the atomizing core 80 , and the aerosol-generating matrix is ​​atomized by the atomizing core 80 to be converted into an aerosol.

[0096] In one embodiment, please refer to Figure 16 The atomizer core 80 is arranged parallel to the axial direction of the atomizer assembly 100. From the end of the nozzle 90 close to the atomizer assembly 100 to the end of the nozzle 90 away from the atomizer assembly 100, the depth and / or width of the microgroove 50 gradually decreases; and the size of the first micropore 11 gradually decreases. Since the atomizer core 80 is arranged parallel to the axial direction of the atomizer assembly, the first micropore 11 is arranged perpendicular to the axial direction of the atomizer assembly 100. Therefore, since the first micropore 11 and the microgroove 50 are the largest in size near the nozzle 90, the first micropore 11 at this position has better liquid conduction and atomization effects.

[0097] In another embodiment of the present application, the atomization device is a battery-free atomizer.

[0098] In another embodiment of the present application, please refer to Figure 17 The atomizing device is an atomizing device having a battery assembly 200 , which includes an atomizing assembly 100 and a battery assembly 200 . The atomizing assembly 100 uses the above-mentioned atomizing assembly 100 , and the battery assembly 200 is used to provide energy for the operation of the atomizing assembly 100 .

[0099] The atomizing device can be used to atomize a liquid matrix. The battery assembly 200 provides energy to the atomizing assembly 100, thereby driving the atomizing assembly 100 to atomize the liquid aerosol matrix into an aerosol that can be inhaled.

[0100] The above description is merely an embodiment of the present application and does not limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. An atomizer core, characterized in that: include: A semiconductor substrate having a plurality of first micro-holes; a cover plate, disposed on one side of the semiconductor substrate, the cover plate having a plurality of second micro-holes; The second micropores are connected to the first micropores in a one-to-one correspondence; A semiconductor heating layer is provided on a surface of the semiconductor substrate away from the cover plate; an electrode, disposed on a side of the semiconductor substrate away from the cover plate and electrically connected to the semiconductor heating layer; The surface of the semiconductor substrate close to the cover plate and / or the surface of the cover plate close to the semiconductor substrate has a plurality of microgrooves, and each of the microgrooves is connected to a plurality of the first micropores.

2. The atomizer core according to claim 1, characterized in that: The plurality of first micropores are arranged in an array; each of the microgrooves is connected to the first micropores in the same row or column.

3. The atomizer core according to claim 2, characterized in that: The width of the microgroove is greater than or equal to half of the pore size of the first micropore, and the width of the microgroove is less than or equal to the pore size of the first micropore.

4. The atomizer core according to claim 2, characterized in that: The first micropores in the same row have the same shape and size, and the first micropores in the same column have different shapes and / or sizes; each of the microgrooves is connected to the first micropores in the same column.

5. The atomizer core according to claim 1, characterized in that: From one end to the other end of the microgroove, the depth and / or width of the microgroove gradually decreases, and the size of adjacent first micropores gradually decreases.

6. The atomizer core according to claim 1, characterized in that: The cover plate further has an exhaust hole on at least one side of the region where the second micropores are formed, and the microgrooves are connected to the exhaust hole; the diameter of the exhaust hole is greater than or equal to three times the diameter of the second micropores.

7. The atomizer core according to claim 6, characterized in that: The cover plate has exhaust holes on opposite sides of the row direction of the plurality of second micropores; the exhaust holes at both ends are respectively connected to different microgrooves; and the width of the microgrooves gradually decreases or increases from one end to the other end of the microgrooves.

8. The atomizer core according to any one of claims 1 to 7, characterized in that: The semiconductor substrate is an intrinsic silicon substrate; wherein, the semiconductor heating layer is a conductive silicon substrate, the surface of the intrinsic silicon substrate away from the cover plate has a receiving groove, and the conductive silicon substrate is embedded in the receiving groove; or, the semiconductor heating layer is a conductive silicon layer formed by doping on the surface of the intrinsic silicon substrate away from the cover plate.

9. An atomizing device, characterized in that: include: a liquid storage chamber for storing an aerosol-generating matrix; An atomizing core is communicated with the liquid storage chamber and is used to atomize the aerosol-generating matrix from the liquid storage chamber; the atomizing core is the atomizing core according to any one of claims 1 to 8.

10. The atomizing device according to claim 9, characterized in that: The atomizing core is arranged parallel to the axial direction of the atomizing assembly of the atomizing device. From one end close to the suction nozzle of the atomizing assembly to the other end away from the suction nozzle of the atomizing assembly, the depth and / or width of the microgroove gradually decreases; and the size of the first micropore gradually decreases.

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