Magnetic assembly and magnetron sputtering equipment

Abstract

The utility model discloses a magnetic force assembly and magnetron sputtering equipment, the magnetic force assembly is applied to the magnetron sputtering equipment, and the magnetic force assembly comprises a first magnetic field generator group located above a substrate. The second magnetic field generator group is positioned below the substrate; and the third magnetic field generator group is positioned above the substrate. The first magnetic field generator set, the second magnetic field generator set and the third magnetic field generator set are coaxially arranged with the base plate and located outside the radial area of the base. The first magnetic field generator set and the second magnetic field generator set jointly act on the substrate to form a uniform magnetic field perpendicular to the substrate. And the third magnetic field generator group is used for regulating and controlling the uniformity and / or intensity of the magnetic field of the whole substrate area. The first magnetic field generator set, the second magnetic field generator set and / or the third magnetic field generator set are / is composed of a plurality of electromagnetic coils. According to the utility model, the uniform distribution of magnetic field intensity on the surface of the substrate can be adjusted, and the consistency of metal deposition and the overall performance of a film are improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor equipment, in particular to a magnetic component and magnetron sputtering equipment. Background Art

[0002] Existing PVD (physical vapor deposition) equipment has undergone numerous attempts and optimizations to optimize the arrangement of permanent magnets or electromagnetic coils in the hope of improving the quality and efficiency of metal deposition. However, the commonly used technical solutions still have significant deficiencies in the uniformity of magnetic field distribution, which directly affects the consistency of metal deposition on the substrate.

[0003] Specifically, existing layout schemes are mostly limited to setting up a single permanent magnet or electromagnetic coil on the underside of the substrate, or configuring an array of multiple permanent magnets or electromagnetic coils under the substrate support base. Although this type of layout method enhances the magnetic field strength in the substrate area to a certain extent, due to the natural properties of the magnetic field line distribution, the magnetic field strength from the center to the edge of the substrate tends to show a decreasing trend. This uneven magnetic field distribution directly leads to the metal particles being subjected to different force fields when deposited on the substrate surface, which in turn affects the basic thickness uniformity and composition consistency of the deposited layer. Moreover, the existing layout scheme cannot achieve the adjustment of the uniformity of the magnetic field distribution in the entire surface area of ​​the substrate. Utility Model Content

[0004] The purpose of the utility model is to provide a magnetic component and magnetron sputtering equipment, which can adjust the uniform distribution of magnetic field intensity on the surface of the substrate, thereby improving the consistency of metal deposition and the overall performance of the film.

[0005] In order to solve the above problems, the present invention is implemented through the following technical solutions:

[0006] A magnetic assembly for use in a magnetron sputtering device includes a vacuum chamber and a base within the chamber for supporting a substrate. The magnetic assembly comprises a first magnetic field generator group located above the substrate, a second magnetic field generator group located below the substrate, and a third magnetic field generator group located above the substrate. The first, second, and third magnetic field generator groups are coaxially arranged with the substrate and located radially outside the base. The first and second magnetic field generator groups work together to generate a uniform magnetic field perpendicular to the substrate at the substrate. The third magnetic field generator group is used to control the uniformity and / or intensity of the magnetic field across the entire substrate area. The first, second, and / or third magnetic field generator groups are composed of multiple electromagnetic coils.

[0007] Optionally, the first magnetic field generator group, the second magnetic field generator group and the third magnetic field generator group are all arranged outside the cavity of the vacuum chamber.

[0008] Optionally, the bottom of the vacuum chamber is provided with an accommodating groove which is recessed inwardly along its axial direction, and the second magnetic field generator group is arranged in the accommodating groove.

[0009] Optionally, the accommodating groove is located outside the axial projection area of ​​the base and is spaced apart from the base.

[0010] Optionally, it also includes: a fourth magnetic field generator group; a accommodating cover is provided below the base, the accommodating cover and the lower surface of the base form an accommodating space, and the accommodating space is not connected to the interior of the vacuum chamber; the fourth magnetic field generator group is arranged in the accommodating space, and is used to regulate the magnetic field strength of the entire substrate area.

[0011] Optionally, the fourth magnetic field generator group and the second magnetic field generator group are located at the same height.

[0012] Optionally, the fourth magnetic field generator group is located in a radial region of the base.

[0013] Optionally, the fourth magnetic field generator group includes a plurality of electromagnetic coils.

[0014] Optionally, it also includes: a shielding ring located in the vacuum chamber, one end of the shielding ring is arranged around the base, and the other end of the shielding ring is connected to the side wall of the vacuum chamber above the base and is grounded through the side wall of the vacuum chamber.

[0015] Optionally, it further includes: a fifth magnetic field generator group, which is arranged on the inner or outer side wall of the shielding ring; the fifth magnetic field generator group is located outside the radial area of ​​the base.

[0016] Optionally, the height of the fifth magnetic field generator group is between the heights of the first magnetic field generator group and the third magnetic field generator group.

[0017] Optionally, the fifth magnetic field generator group includes a plurality of electromagnetic coils.

[0018] Optionally, an annular groove recessed radially inward is provided on the outer side of the bottom of the vacuum chamber, and the second magnetic field generator group is arranged in the annular groove.

[0019] Optionally, it further includes: at least one magnetic shielding cover, which covers the outside of the first to third magnetic field generator groups and is used to shield part of the magnetic field generated by the first to third magnetic field generator groups that diverges to the outside of the vacuum chamber.

[0020] Optionally, the multiple electromagnetic coils are arranged radially.

[0021] Optionally, the multiple electromagnetic coils are arranged in a matrix.

[0022] Optionally, the multiple electromagnetic coils are arranged in a zigzag shape.

[0023] On the other hand, the present invention further provides a magnetron sputtering device, comprising: a target material, which is arranged on the top of the vacuum chamber and opposite to the base; and the magnetic component as described above.

[0024] The utility model has the following technical effects:

[0025] The utility model utilizes the arrangement of the third, fourth or fifth magnetic field generator group to adjust the uniform distribution of the magnetic field intensity on the substrate surface, thereby improving the consistency of metal deposition and the overall performance of the deposited layer. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic structural diagram of a magnetron sputtering device with a magnetic component provided in one embodiment of the present invention;

[0027] Figure 2 A schematic structural diagram of a magnetron sputtering device with a magnetic component provided in another embodiment of the present invention;

[0028] Figure 3 A schematic structural diagram of a magnetron sputtering device with a magnetic component provided in yet another embodiment of the present invention;

[0029] Figure 4 A schematic structural diagram of a magnetron sputtering device with a magnetic component provided in another embodiment of the present invention;

[0030] FIG5 is a schematic structural diagram of a magnetic assembly provided in one embodiment of the present invention.

[0031] 100 - vacuum chamber; 102 - target; 101 - base; W - substrate; 201 - 205 - first to fifth magnetic field generator groups; 103 - annular groove; 104 - housing cover; 105 - shielding ring; 106 - magnetic shielding cover; 107 - housing groove; 2011 - electromagnetic coil. DETAILED DESCRIPTION

[0032] The following is a further detailed description of a magnetic assembly and magnetron sputtering equipment proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size, etc. illustrated in the drawings of this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the implementation conditions of the present invention, so they have no technical substantive significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0033] As described in the background, due to the inherent distribution of magnetic field lines, the magnetic field strength tends to decrease from the center to the edge of the substrate. Specifically, the magnetic field strength is higher in the center of the substrate, where the metal particles experience a greater Lorentz force, resulting in faster deposition and a thicker layer. Meanwhile, the magnetic field strength is weaker at the edge of the substrate, where the metal particles experience less force, resulting in a slower deposition rate and a thinner layer. This difference not only leads to uneven thickness of the deposited layer but can also cause variations in the metal composition within the deposited layer, impacting the performance and quality of the entire deposited layer.

[0034] In view of this, the present invention optimizes the arrangement of the magnetic field generator to achieve uniform distribution of the magnetic field intensity on the substrate surface, thereby improving the consistency of metal deposition and the overall performance of the deposited layer.

[0035] like Figure 1 As shown, this embodiment provides a magnetron sputtering device including: a vacuum chamber 100, a base 101 located at the bottom of the vacuum chamber 100, the base 101 is used to carry a substrate W, a target material 102, which is arranged at the top of the vacuum chamber 100 and opposite to the base 101; and a magnetic component.

[0036] In this embodiment, the magnetic assembly includes: a first magnetic field generator group 201 located above the substrate W; a second magnetic field generator group 202 located below the substrate W; and a third magnetic field generator group 203 located above the substrate W.

[0037] The first magnetic field generator group 201, the second magnetic field generator group 202, and the third magnetic field generator group 203 are all coaxially arranged with respect to the substrate W and are located outside the radial region of the base 101. The first magnetic field generator group 201 and the second magnetic field generator group 202 work together to form a uniformly distributed magnetic field perpendicular to the substrate W (it is understood that a perpendicular magnetic field is a substantially perpendicular magnetic field, i.e., the direction of the magnetic field is approximately parallel to the axis of the substrate W). The third magnetic field generator group 203 is used to control the uniformity and / or intensity of the magnetic field across the entire substrate W region. The first magnetic field generator group 201, the second magnetic field generator group 202, and / or the third magnetic field generator group 203 are composed of multiple electromagnetic coils.

[0038] Through the above scheme, during use, the uniformity of the magnetic field distribution on the substrate can be improved by applying currents of different magnitudes and directions to the various electromagnetic coils in the third magnetic field generator group 203, thereby improving the uniformity of the deposition of the thin film (deposition layer). The first magnetic field generator 201 on the upper side of the substrate can guide the ions emitted from the target material to move toward the substrate, preventing the ions emitted from the target material 102 from bombarding the side walls of the vacuum chamber 100, thereby increasing the deposition rate. The first magnetic field generator 201, the third magnetic field generator 203 and the second magnetic field generator group 202 on the lower side of the substrate work together to improve the uniformity of the magnetic field at the edge of the substrate, that is, the uniformity of the magnetic field in the entire substrate area can be adjusted, thereby improving the consistency of metal deposition and the overall performance of the deposited layer.

[0039] During use, the current direction passed through the first magnetic field generator group 201 and the second magnetic field generator group 202 can be made the same, and the magnetic field direction generated can be made the same. The two cooperate with each other to generate a magnetic field that is almost perpendicular to the surface of the substrate W, thereby guiding the ions emitted from the target to move almost vertically toward the substrate.

[0040] When the direction of the current passed into the third magnetic field generator group 203 is the same as the direction of the current passed into the first magnetic field generator group 201 and the direction of the current of the first magnetic field generator group 201, and the direction of the magnetic field generated is the same as that of the first magnetic field generator group 201, the magnetic field strength of the entire substrate area can be increased, which can be used to remove unnecessary deposited layers or etch away the thin film on the corresponding deposited area, thereby increasing the efficiency of thin film removal.

[0041] When the direction of the current passed into the third magnetic field generator group 203 is opposite to the direction of the current passed into the first magnetic field generator group, the direction of the magnetic field generated by the third magnetic field generator group 203 is opposite to the direction of the magnetic field generated by the first magnetic field generator group 201, which can adjust the uniformity of the magnetic field in the entire substrate area, thereby improving the consistency of metal deposition and the overall performance of the deposited layer.

[0042] Please continue to refer to Figure 1 As shown, the first magnetic field generator group 201, the second magnetic field generator group 202 and the third magnetic field generator group 203 are all arranged outside the vacuum chamber 100. The vacuum degree of the vacuum chamber 100 can be improved.

[0043] This is because the insulating layer on the surface of the electromagnetic coil has microscopic pores, which easily allow impurity gases and other substances to precipitate in the vacuum chamber, polluting the vacuum chamber and affecting the ultra-high vacuum degree in the vacuum chamber 100 .

[0044] Please continue to refer to Figure 1 As shown, in this embodiment or some other embodiments, the outer side of the bottom of the vacuum chamber 100 is provided with an annular groove 103 that is recessed radially inward, and the second magnetic field generator group 202 is arranged in the annular groove 103. This makes it easier to arrange the second magnetic field generator group 202 and saves space occupied by the equipment. Figure 2 As shown, in this embodiment or some other embodiments, a fourth magnetic field generator group 204 is further included. A housing 104 is provided below the base 101. The housing 104 and the lower surface of the base 101 form a housing space, which is not connected to the interior of the vacuum chamber 100. The fourth magnetic field generator group 204 is disposed within the housing space and is used to control the magnetic field intensity across the entire substrate W region. Therefore, placing the fourth magnetic field generator group 204 within the vacuum chamber, close to the substrate W, allows for a smaller current to be supplied to achieve the desired magnetic field intensity, thereby saving electricity and costs. This reduces energy consumption and is environmentally friendly.

[0045] In some other embodiments, it is understood that the fourth magnetic field generator group 204 and the second magnetic field generator group 202 are located at the same or different heights. Preferably, the fourth magnetic field generator group 204 and the second magnetic field generator group 202 are located at the same height to reduce the difficulty of electromagnetic decoupling and achieve precise adjustment of the magnetic field strength within the vacuum chamber 100.

[0046] Please continue to refer to Figure 2 As shown, the fourth magnetic field generator group 204 is located within the radial region of the base 101. However, the fourth magnetic field generator group 204 is relatively far away from the radial region of the substrate W, so that the magnetic field lines of the fourth magnetic field generator group 204 at the edge of the substrate W are not bent or deflected due to being too close. In addition, because the fourth magnetic field generator group 204 is located far away from the substrate, the vertical magnetic field lines generated on the substrate W are not excessively concentrated in the center of the substrate W, but are instead dispersed across the entire substrate W. Furthermore, the density distribution of the magnetic field lines on the substrate W is closer to the peak distribution region, resulting in a more even density distribution. Therefore, the uniformity of the magnetic field lines on the substrate W is significantly improved.

[0047] like Figure 3 As shown, in this embodiment or some other embodiments, the device further includes a shielding ring 105 located in the vacuum chamber 100. One end of the shielding ring 105 surrounds the base 101, and the other end of the shielding ring 105 is connected to the side wall of the vacuum chamber 100 above the base 101 and is grounded through the side wall of the vacuum chamber 100. The shielding ring 105 can prevent the sputtered target material from adhering to the inner wall of the vacuum chamber 100.

[0048] Please continue to refer to Figure 3 As shown, in this embodiment or some other embodiments, it further includes: a fifth magnetic field generator group 205, which is arranged on the inner or outer wall of the shielding ring 105; the fifth magnetic field generator group 205 is located outside the radial area of ​​the base 101.

[0049] The fifth magnetic field generator set 205 is positioned within the vacuum chamber, close to the substrate W, allowing for a smaller current to be supplied to achieve the required magnetic field strength, thereby saving power and costs. However, since the fifth magnetic field generator set 205 is isolated from the reaction area of ​​the vacuum chamber 100 by the shielding ring 105, the presence of the fifth magnetic field generator set 205 does not affect the vacuum level in the reaction area of ​​the vacuum chamber 100.

[0050] It is understandable that, based on this, the fourth magnetic field generator group 204 can also be directly disposed below the base 101 , preferably outside the radial region of the substrate W.

[0051] Please continue to refer to Figure 3 As shown, preferably, the height of the fifth magnetic field generator group 205 is between the heights of the first magnetic field generator group 201 and the third magnetic field generator group 203 .

[0052] The fifth magnetic field generator group 205 is coupled with the other magnetic field generator groups (the first to fourth magnetic field generator groups) to further enhance the control accuracy of the magnetic field near the substrate W and improve the uniformity of the magnetic field near the substrate W.

[0053] Please continue to refer to Figure 3 As shown, it also includes: at least one magnetic shielding cover 106, which covers the outside of the first magnetic field generator group 201 to the third magnetic field generator group 203, and is used to shield the part of the magnetic field generated by the first magnetic field generator group 201 to the third magnetic field generator group 203 that diverges toward the outside of the vacuum chamber 100.

[0054] like Figure 4As shown, in this embodiment or some other embodiments, the bottom of the vacuum chamber 100 is provided with a receiving groove 107 that is recessed inward along its axial direction, and the second magnetic field generator group 202 is disposed within the receiving groove 107. The location and function of the second magnetic field generator group 202 are equivalent to those of the fourth magnetic field generator group 404 described above. Furthermore, compared to the fourth magnetic field generator group 404, which is disposed within the vacuum chamber 100, the receiving groove 107 is formed by recessing inward from the outside of the vacuum chamber 100. It is located in the atmosphere rather than in a vacuum environment. This significantly reduces the probability of atmospheric air or impurities being introduced into the vacuum chamber 100, thus reducing the difficulty of maintaining a vacuum level within the vacuum chamber 100. Furthermore, since it is essentially disposed outside the vacuum chamber 100, it is easily installed and removed, and saves space.

[0055] In one embodiment, the accommodating groove 107 is located outside the axial projection area of ​​the base 101 and is spaced apart from the base 101, and thus is radially away from the range of the substrate W and axially away from the range of the substrate W. This can make the distance between the second magnetic field generator group 202 and the first magnetic field generator group 201 relative to the substrate W more consistent, and make the radii of the two magnetic field generator groups converge, which is conducive to forming a magnetic field perpendicular to the substrate W on the substrate W.

[0056] like Figures 5a to 5c As shown, any one or more of the first magnetic field generator group 201 to the fifth magnetic field generator group 205 include a plurality of electromagnetic coils.

[0057] By applying currents of varying magnitude and direction to each electromagnetic coil, the uniformity of the magnetic field distribution near the substrate and the uniformity of the deposited layer can be improved. The magnetic field generator group located above the substrate W guides ions emitted from the target toward the substrate to increase the deposition rate. Together with the electromagnetic coils below the substrate, they improve the uniformity of the magnetic field near the substrate. The magnetic field generator group located above the substrate prevents ions emitted from the target from bombarding the chamber sidewalls.

[0058] Among them, such as Figure 5a As shown, the multiple electromagnetic coils in an electromagnetic generator group are arranged radially. This arrangement can reduce the difficulty of electromagnetic decoupling and achieve precise adjustment of the magnetic field strength in the vacuum chamber.

[0059] Among them, such as Figure 5b As shown, the multiple electromagnetic coils in an electromagnetic generator group are arranged in a matrix. Although this arrangement increases the difficulty of decoupling, since the electromagnetic coils can be placed as close as possible to the base 101, it can not only adjust the magnetic field distribution in the vacuum chamber, but also minimize power consumption, saving costs, reducing energy consumption, and being low-carbon and environmentally friendly.

[0060] Among them, such as Figure 5c As shown, the multiple electromagnetic coils in an electromagnetic generator group are arranged in a zigzag shape to reduce the electromagnetic crosstalk problem between a group of electromagnetic coils.

[0061] The multiple electromagnetic coils have different diameters and placement heights, and can have different current magnitudes and current directions. The current in each electromagnetic coil can be independently controlled to ensure that current flows through at least one electromagnetic coil.

[0062] In summary, the present invention can regulate the magnetic field uniformity of the entire substrate surface area and obtain higher metal deposition consistency by arranging a third, fourth or fifth electron generator group with multiple electromagnetic coils and controlling the current input direction and current magnitude of the electromagnetic coils.

[0063] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0064] In the description of the present invention, it should be understood that the terms "center," "height," "thickness," "up," "down," "vertical," "horizontal," "top," "bottom," "inside," "outside," "axial," "radial," "circumferential," and the like, indicating positions or location relationships, are based on the positions or location relationships shown in the accompanying drawings and are intended solely to facilitate the description of the present invention and simplify the description. They do not indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limitations on the present invention. In the description of the present invention, unless otherwise specified, "plurality" means two or more.

[0065] In the description of this utility model, unless otherwise expressly specified or limited, the terms "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connection, detachable connection, or integration; mechanical connection or electrical connection; direct connection or indirect connection through an intermediate medium; internal communication between two components or interaction between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0066] In the present invention, unless otherwise expressly specified or limited, a first feature being "above" or "below" a second feature may include the first and second features being in direct contact, or may include the first and second features being in contact not directly but through another feature between them. Moreover, a first feature being "above," "above," and "above" a second feature may include the first feature being directly above or obliquely above the second feature, or may simply mean that the first feature is higher in level than the second feature. A first feature being "below," "below," and "below" a second feature may include the first feature being directly below or obliquely below the second feature, or may simply mean that the first feature is lower in level than the second feature.

[0067] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be readily apparent to those skilled in the art. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. A magnetic assembly used in a magnetron sputtering device, wherein the magnetron sputtering device comprises a vacuum chamber and a base located inside the vacuum chamber, wherein the base is used to support a substrate, wherein: The magnetic assembly includes: a first magnetic field generator group, located above the substrate; a second magnetic field generator group, located below the substrate; a third magnetic field generator group, located above the substrate; The first magnetic field generator group, the second magnetic field generator group, and the third magnetic field generator group are all coaxially arranged with the substrate, and are all located outside the radial area of ​​the base; The first magnetic field generator group and the second magnetic field generator group work together to form a uniform magnetic field perpendicular to the substrate at the substrate position; The third magnetic field generator group is used to control the uniformity and / or intensity of the magnetic field in the entire substrate area; The first magnetic field generator group, the second magnetic field generator group and / or the third magnetic field generator group are composed of a plurality of electromagnetic coils.

2. The magnetic assembly according to claim 1, wherein: The first magnetic field generator group, the second magnetic field generator group, and the third magnetic field generator group are all arranged outside the vacuum chamber.

3. The magnetic assembly according to claim 1, wherein: The bottom of the vacuum chamber is provided with an accommodating groove which is recessed inwardly along its axial direction, and the second magnetic field generator group is arranged in the accommodating groove.

4. The magnetic assembly according to claim 3, wherein: The accommodating groove is located outside the axial projection area of ​​the base and is spaced apart from the base.

5. The magnetic assembly according to claim 1, wherein: Also includes: A fourth magnetic field generator group; a accommodating cover is provided below the base, and the accommodating cover and the lower surface of the base form an accommodating space, and the accommodating space is not connected to the interior of the vacuum chamber; the fourth magnetic field generator group is arranged in the accommodating space, and is used to regulate the magnetic field strength of the entire substrate area.

6. The magnetic assembly according to claim 5, wherein: The fourth magnetic field generator group and the second magnetic field generator group are located at the same height.

7. The magnetic assembly according to claim 5, wherein: The fourth magnetic field generator group is located in the radial region of the base.

8. The magnetic assembly according to claim 5, wherein: The fourth magnetic field generator group includes a plurality of electromagnetic coils.

9. The magnetic assembly according to claim 1, wherein: Also includes: A shielding ring is located in the vacuum chamber, one end of the shielding ring is arranged around the base, and the other end of the shielding ring is connected to the side wall of the vacuum chamber above the base and is grounded through the side wall of the vacuum chamber.

10. The magnetic assembly according to claim 9, wherein: Also includes: The fifth magnetic field generator group is arranged on the inner or outer wall of the shielding ring; the fifth magnetic field generator group is located on the outer substrate of the radial area of ​​the base.

11. The magnetic assembly according to claim 10, wherein: The height of the fifth magnetic field generator group is between the heights of the first magnetic field generator group and the third magnetic field generator group.

12. The magnetic assembly according to claim 10, wherein: The fifth magnetic field generator group includes a plurality of electromagnetic coils.

13. The magnetic assembly according to claim 1, wherein: An annular groove recessed radially inward is provided on the outer side of the bottom of the vacuum chamber, and the second magnetic field generator group is arranged in the annular groove.

14. The magnetic assembly according to claim 1, wherein: Also includes: At least one magnetic shielding cover is covered on the outside of the first to third magnetic field generator groups, and is used to shield part of the magnetic field generated by the first to third magnetic field generator groups that diverges to the outside of the vacuum chamber.

15. The magnetic assembly according to any one of claims 1 to 14, characterized in that: The plurality of electromagnetic coils are arranged radially.

16. The magnetic assembly according to any one of claims 1 to 14, characterized in that: The multiple electromagnetic coils are arranged in a matrix.

17. The magnetic assembly according to any one of claims 1 to 14, characterized in that: The multiple electromagnetic coils are arranged in a zigzag shape.

18. A magnetron sputtering device, characterized in that: include: A target material is arranged at the top of the vacuum chamber and is opposite to the base; and a magnetic assembly according to any one of claims 1 to 17.

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