Temperature shock experiment device for semiconductor power device

Abstract

The utility model discloses a semiconductor power device temperature shock experiment device, which comprises a low temperature box, a high temperature box, a heat insulation baffle and a clamp, the heat insulation baffle is arranged between the low temperature box and the high temperature box to isolate the high temperature box and the low temperature box, and the clamp is used for clamping and moving a semiconductor power device. A cold table is arranged in the low-temperature box and divides the low-temperature box into an upper low-temperature box body and a lower low-temperature box body, and a hot table is arranged in the high-temperature box and divides the high-temperature box into an upper high-temperature box body and a lower high-temperature box body. According to the utility model, heat conduction is realized through the cold and hot stage, rapid heat transfer with the semiconductor power device can be realized, rapid temperature shock conversion can be realized through assistance of the clamp, in addition, errors between the actual test temperature and the heating or refrigerating temperature of the device to be tested can be reduced through heat conduction of the cold stage and the hot stage, and the detection accuracy is improved.

Description

Technical Field

[0001] The utility model relates to a temperature shock experimental device, in particular to a temperature shock experimental device for semiconductor power devices. Background Art

[0002] Currently, semiconductor power devices undergo environmental reliability testing and evaluation during both R&D and before shipment. Power devices, especially the components and solders of optical devices like lasers and detectors, are sensitive to extreme temperature shocks. Device performance after temperature shocks is a crucial aspect of semiconductor testing and reliability evaluation.

[0003] In traditional temperature shock test equipment, a fixture is usually used to grab and move the device under test, so that the device under test can be switched between a high-temperature chamber and a low-temperature chamber. However, the device under test and the low-temperature chamber and the high-temperature chamber use non-contact heat transfer. This method takes a long time to achieve high-low temperature conversion, consumes a lot of energy, and there is a large error between the actual test temperature and the heating / cooling temperature. Utility Model Content

[0004] Purpose of the utility model: The purpose of the utility model is to provide a temperature shock test device for semiconductor power devices that can achieve rapid heat transfer and high test accuracy.

[0005] Technical solution: The semiconductor power device temperature shock experimental device described in the present invention includes a low-temperature box, a high-temperature box, an insulating baffle and a clamp. The insulating baffle is arranged between the low-temperature box and the high-temperature box to isolate the high-temperature box and the low-temperature box. The clamp is used to clamp and move the semiconductor power device. A cold stage is provided in the low-temperature box, and the cold stage separates the low-temperature box into an upper low-temperature box body and a lower low-temperature box body. A hot stage is provided in the high-temperature box, and the hot stage separates the high-temperature box into an upper high-temperature box body and a lower high-temperature box body.

[0006] Optionally, the cold stage and the hot stage can be made of highly thermally conductive metal materials such as aluminum alloy or copper. The semiconductor power device can be a gallium nitride radio frequency device, a gallium arsenide radio frequency device, an LDMOS, a gallium nitride power electronic device, a SiC-based power electronic device, a semiconductor laser, or the like. The present invention utilizes heat conduction through the cold and hot stages to rapidly transfer heat to and from the semiconductor power device. With the aid of a fixture, rapid temperature shock conversion can be achieved. Furthermore, heat conduction through the cold and hot stages can reduce the error between the actual test temperature of the device under test and the heating or cooling temperature, thereby improving detection accuracy.

[0007] The cold stage and the hot stage are located at the same height so that the semiconductor power device can move on the cold stage and the hot stage.

[0008] The thermal insulation baffle includes an upper thermal insulation baffle, a middle thermal insulation baffle, and a lower thermal insulation baffle. The upper thermal insulation baffle is located between the upper low-temperature box and the upper high-temperature box. A transfer channel is provided in the lower middle portion of the upper thermal insulation baffle. The fixture is used to horizontally move the semiconductor power device. The middle thermal insulation baffle is located between the hot stage and the cold stage. The lower thermal insulation baffle is located between the lower low-temperature box and the upper high-temperature box. The transfer channel provides a path for the movement of the semiconductor power device.

[0009] The upper insulation baffle and the middle insulation baffle are provided separately, and the upper insulation baffle is configured to move up and down. The up and down movement of the insulation baffle can change the connection area between the high-temperature box and the low-temperature box, thereby controlling the insulation effect of the upper insulation baffle.

[0010] The lower high-temperature box is provided with a hot stage temperature control device, and the lower low-temperature box is provided with a cold stage temperature control device and liquid nitrogen. The cold stage temperature control device and the hot stage temperature control device can respectively realize rapid cooling and heating of the cold stage and the hot stage.

[0011] The cold stage temperature control device includes a fan, a float, and a scale connected to the float. The fan is located above the liquid nitrogen and is used to control the volatilization rate of the liquid nitrogen. The float and the scale are used to determine the temperature of the cold stage at the current liquid nitrogen level. The distance between the liquid nitrogen level and the cold stage affects the efficiency of heat transfer. By actually measuring the distance between the two and the cold stage temperature, and establishing a functional relationship between different liquid nitrogen levels and the cold stage temperature, a scale marked with liquid nitrogen levels and corresponding temperatures can be created, thereby achieving precise low-temperature control.

[0012] The cold stage is provided with a nitrogen escape port, and the liquid nitrogen evaporates to generate nitrogen gas, which can enter the upper low-temperature box and the upper high-temperature box through the nitrogen escape port to achieve nitrogen environment simulation of the upper low-temperature box and / or the upper high-temperature box.

[0013] The cold stage and the hot stage are both provided with temperature sensors, which can accurately sense the temperature of the cold stage and the hot stage, further improving the accuracy of high temperature and low temperature detection.

[0014] A cover plate is provided on the top of the low-temperature box and the high-temperature box, an exhaust port is opened on the cover plate, and a nitrogen addition port is opened on the side wall of the lower low-temperature box.

[0015] Beneficial effects: Compared with the existing technology, the present invention has the following advantages: 1. By setting up a cold stage and a hot stage to carry out temperature shock tests, the thermal conductivity efficiency can be improved, the error between the actual test temperature and the heating / cooling temperature can be reduced, and the efficiency and accuracy of the test can be improved; 2. By establishing a functional relationship between different liquid nitrogen water levels and the cold stage temperature, a scale marked with liquid nitrogen water levels and corresponding temperatures is formed, thereby achieving precise low-temperature control. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 It is a structural diagram of the utility model;

[0017] Figure 2 It is a top view of the cold stage and the hot stage of the utility model;

[0018] Figure 3 It is a side view of the heat insulation baffle of the utility model. DETAILED DESCRIPTION

[0019] The technical solution of the present utility model will be further described below with reference to the accompanying drawings.

[0020] Example 1: Figures 1 to 3 As shown, the semiconductor power device temperature shock experimental device described in the present invention includes a low-temperature box 1, a high-temperature box 2, an insulating baffle 3 and a clamp. The insulating baffle 3 is arranged between the low-temperature box 1 and the high-temperature box 2 to isolate the high-temperature box 2 from the low-temperature box 1. The clamp is used to clamp and horizontally move the semiconductor power device. In this embodiment, the clamp is installed on a horizontally arranged guide rail.

[0021] The low-temperature chamber 1 is provided with a cold stage 11, which divides the low-temperature chamber 1 into an upper low-temperature chamber 12 and a lower low-temperature chamber 13. The high-temperature chamber 2 is provided with a hot stage 21, which divides the high-temperature chamber 2 into an upper high-temperature chamber 22 and a lower high-temperature chamber 23. The cold stage 11 and the hot stage 21 are located at the same height. Both are made of hard aluminum alloy, and their upper and lower surfaces are semicircular with a radius of 10 cm.

[0022] The thermal insulation baffle 3 includes an upper thermal insulation baffle 31, a middle thermal insulation baffle 32 and a lower thermal insulation baffle 33. The upper thermal insulation baffle 31 is located between the upper low-temperature box 12 and the upper high-temperature box 22, and a transfer channel 31a is opened in the middle position of the lower part of the upper thermal insulation baffle 31; the middle thermal insulation baffle 32 is located between the hot stage 21 and the cold stage 11; the lower thermal insulation baffle 33 is located between the lower low-temperature box 13 and the lower high-temperature box 22; the upper thermal insulation baffle 31 and the middle thermal insulation baffle 32 are separately arranged, and the upper thermal insulation baffle 31 is configured to be able to move up and down.

[0023] The lower high-temperature box 23 is equipped with a hot stage temperature control device 4; the lower low-temperature box 13 is equipped with a cold stage temperature control device 5 and liquid nitrogen 6. The cold stage temperature control device includes a fan 51, a float 52, a scale 53 connected to the float 52, and a conductive member 54 fixed below the cold stage 11. The fan 51 is located above the liquid nitrogen 6 and is used to control the volatilization rate of the liquid nitrogen 6. The float 52 and scale 53 are used to determine the temperature of the cold stage 11 at the current liquid nitrogen level. The lower end of the conductive member 54 contacts the liquid nitrogen 6. The conductive member 54 is made of metal. A nitrogen escape vent 11a is provided on the cold stage 11. The volatilization of liquid nitrogen 6 produces nitrogen gas, which can enter the upper low-temperature box 12 and the upper high-temperature box 22 through the nitrogen escape vent 11a to simulate a nitrogen environment. Temperature sensors 7 are installed on both the cold stage 11 and the hot stage 21 to monitor the temperature of the cold stage 11 and the hot stage 21 in real time. A cover plate 8 is provided on the top of the low temperature box 1 and the high temperature box 2. An exhaust port 8a is provided on the cover plate 8. A nitrogen adding port 13a is provided on the side wall of the lower low temperature box body 13. The nitrogen adding port 13a is sealable for timely replenishing liquid nitrogen 6.

[0024] Example 2: The difference between this example and Example 1 is that the semiconductor power device temperature shock test device is in the shape of a rectangular parallelepiped as a whole, and the upper and lower surfaces of the cold stage 11 and the hot stage 21 are rectangular.

[0025] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some or all of the technical features therein. These modifications or replacements do not deviate the essence of the corresponding technical solutions from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.

Claims

1. A semiconductor power device temperature shock test device, comprising a low temperature box (1), a high temperature box (2), a heat insulation baffle (3) and a fixture, wherein the heat insulation baffle (3) is arranged between the low temperature box (1) and the high temperature box (2) to isolate the high temperature box (2) from the low temperature box (1), and the fixture is used to clamp and move the semiconductor power device, characterized in that: The low-temperature box (1) is provided with a cold stage (11), and the cold stage (11) divides the low-temperature box (1) into an upper low-temperature box body (12) and a lower low-temperature box body (13); the high-temperature box (2) is provided with a hot stage (21), and the hot stage (21) divides the high-temperature box (2) into an upper high-temperature box body (22) and a lower high-temperature box body (23).

2. The semiconductor power device temperature shock test device according to claim 1, characterized in that: The cold stage (11) and the hot stage (21) are located at the same height.

3. The semiconductor power device temperature shock test device according to claim 2, characterized in that: The heat insulation baffle (3) comprises an upper heat insulation baffle (31), a middle heat insulation baffle (32) and a lower heat insulation baffle (33); the upper heat insulation baffle (31) is located between the upper low-temperature box (12) and the upper high-temperature box (22); a transfer channel (31a) is provided at the middle position of the lower portion of the upper heat insulation baffle (31); and the clamp is used to horizontally move the semiconductor power device; the middle heat insulation baffle (32) is located between the hot stage (21) and the cold stage (11); and the lower heat insulation baffle (33) is located between the lower low-temperature box (13) and the lower high-temperature box (23).

4. The semiconductor power device temperature shock test device according to claim 3, characterized in that: The upper heat insulation baffle (31) and the middle heat insulation baffle (32) are separately provided, and the upper heat insulation baffle (31) is configured to be able to move up and down.

5. The semiconductor power device temperature shock test device according to claim 1, characterized in that: The lower high-temperature box (23) is provided with a hot stage temperature control device (4); the lower low-temperature box (13) is provided with a cold stage temperature control device (5) and liquid nitrogen (6).

6. The semiconductor power device temperature shock test device according to claim 5, characterized in that: The cold stage temperature control device comprises a fan (51), a float (52), a scale (53) connected to the float (52), and a conductive member (54) fixed below the cold stage (11); the fan (51) is located above the liquid nitrogen (6) and is used to control the volatilization rate of the liquid nitrogen (6); the float (52) and the scale (53) are used to determine the temperature of the cold stage (11) under the current liquid nitrogen water level; and the lower end of the conductive member (54) is in contact with the liquid nitrogen (6).

7. The semiconductor power device temperature shock test device according to claim 6, characterized in that: The cold stage (11) is provided with a nitrogen escape port (11a), and the liquid nitrogen (6) evaporates to generate nitrogen, which can enter the upper low-temperature box (12) and the upper high-temperature box (22) through the nitrogen escape port (11a).

8. The semiconductor power device temperature shock test device according to claim 1, characterized in that: Temperature sensors (7) are provided on both the cold stage (11) and the hot stage (21).

9. The semiconductor power device temperature shock test device according to claim 1, characterized in that: A cover plate (8) is provided on the top of the low-temperature box (1) and the high-temperature box (2), an exhaust port (8a) is provided on the cover plate (8), and a nitrogen addition port (13a) is provided on the side wall of the lower low-temperature box body (13).

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