Warp measuring device

Abstract

The utility model relates to a warping measuring device. The warping measuring device comprises a measuring table; the chuck is positioned on the upper side of the measuring table, is used for fixing the wafer and is not in contact with the edge area of the wafer; and the sensor is positioned on one side, close to the measuring table or far away from the measuring table, of the chuck, and is used for measuring the warping of the wafer. As the chuck is not in contact with the edge area of the wafer, the chuck does not support or support the edge area of the wafer, and the edge area of the wafer is not supported by the chuck, so that the warping data measured by the sensor is more accurate and closer to the warping data of the wafer during subsequent wafer processing, and the warping data is more real.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a warpage measurement device. Background Art

[0002] Wafers will have a certain degree of warpage. Since this directly affects subsequent process operations, it is generally necessary to measure the warpage of the wafer. During measurement, the wafer is usually placed on the chuck, and the sensor reads the height data of various points on the wafer to obtain the wafer warpage data.

[0003] In related technologies, warpage measurement is performed by placing the wafer directly on the chuck. Since the wafer material is relatively soft, the collapsed edge is held up by the chuck. In subsequent processes, the wafer is generally lifted by a robotic arm without the support of the chuck. Therefore, the warpage data measured on the chuck is distorted and inaccurate, which may lead to the risk of wafer collision during subsequent machine operations. Utility Model Content

[0004] Based on this, it is necessary to provide a warpage measurement device to address the problem of inaccurate warpage data, the device comprising:

[0005] Measuring platform;

[0006] a chuck, located on the upper side of the measuring table, for fixing the wafer and not contacting the edge area of ​​the wafer;

[0007] The sensor is located on a side of the chuck close to the measuring table or a side away from the measuring table, and is used to measure the warpage of the wafer.

[0008] In one embodiment, the chuck includes a first chuck; the first chuck is used for non-contact adsorption of the wafer.

[0009] In one embodiment, the sensor is located on a side of the first chuck close to the measuring platform.

[0010] In one embodiment, the first chuck comprises a Bernoulli chuck.

[0011] In one embodiment, the chuck includes a second chuck; one side of the second chuck is connected to the measuring table, and the other side away from the measuring table is provided with an ejection mechanism, and the ejection mechanism is used to at least contact the center of the wafer.

[0012] In one embodiment, the sensor is located on the upper side and / or the lower side of the ejection mechanism.

[0013] In one embodiment, one end of the ejection mechanism is connected to the other side of the second chuck, and a rubber pad is provided on the other end away from the second chuck, and the rubber pad is used to contact the wafer.

[0014] In one embodiment, the ejection mechanism is one of an annular ejection mechanism, a rectangular ejection mechanism, and a polygonal ejection mechanism; the annular ejection mechanism includes: cylindrical bodies arranged in an annular shape.

[0015] In one embodiment, one end of each of the columnar bodies is connected to the other surface of the second chuck, and a rubber pad is provided on the other end away from the second chuck, and the rubber pad is used to contact the wafer;

[0016] or

[0017] One end of each of the columnar bodies is connected to the other surface of the second chuck, and the other end away from the second chuck is configured as a spherical surface, and the spherical surface is used to contact the wafer.

[0018] In one embodiment, the outer radius of the annular ejection mechanism is smaller than the radius of the wafer.

[0019] The warp measurement device comprises a measuring table, a chuck, and a sensor. The chuck, located above the measuring table, secures the wafer and maintains contact with the wafer's edge. The sensor, located on either side of the chuck, close to or away from the measuring table, measures the wafer's warp. Because the chuck does not contact the wafer's edge, it does not lift or support it, and the chuck's support force does not affect the wafer's edge. Consequently, the warp data measured by the sensor is more accurate, closer to the actual warp data expected during subsequent wafer processing, and more realistic. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 Schematic diagram of a traditional warpage measurement device;

[0021] Figure 2 is a schematic diagram of a warpage measurement device in a parallel embodiment;

[0022] Figure 3 A schematic diagram of a warpage measurement device in one embodiment;

[0023] Figure 4 A warpage measurement device and detailed schematic diagram in one embodiment;

[0024] Figure 5 A schematic diagram of a warpage measurement device in another embodiment;

[0025] Figure 6 A warpage measurement device and detailed schematic diagram in another embodiment;

[0026] Figure 7 This is a warpage measurement device in another embodiment.

[0027] 10. Measuring table; 11. Chuck; 12. Sensor; 13. Wafer; 111. First chuck; 112. Second chuck; 113. Ejection mechanism. DETAILED DESCRIPTION

[0028] To make the above-mentioned objects, features, and advantages of the present application more clearly understood, the specific embodiments of the present application are described in detail below with reference to the accompanying drawings. The following description sets forth many specific details to facilitate a full understanding of the present application. However, the present application can be implemented in many other ways than those described herein, and those skilled in the art can make similar improvements without violating the scope of the present application. Therefore, the present application is not limited to the specific embodiments disclosed below.

[0029] In the description of this application, it should be understood that if the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. appear, the orientation or position relationship indicated by these terms is based on the orientation or position relationship shown in the accompanying drawings, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application.

[0030] In addition, if the terms "first" or "second" appear, these terms are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of technical features indicated. Therefore, a feature specified as "first" or "second" may explicitly or implicitly include at least one of such features. In the description of this application, if the term "plurality" appears, "plurality" means at least two, for example, two, three, etc., unless otherwise specifically defined.

[0031] In this application, unless otherwise specified or limited, the terms "mounted," "connected," "connected," "fixed," etc., should be interpreted broadly. For example, these terms may refer to fixed connections, removable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediary; and internal communication between two components or interaction between two components, unless otherwise specified. Those skilled in the art will understand the specific meanings of these terms in this application based on the specific circumstances.

[0032] In this application, unless otherwise expressly specified or limited, if a first feature is described as being "above" or "below" a second feature, or similar descriptions, this may mean that the first and second features are in direct contact, or that the first and second features are in indirect contact through an intermediate medium. Furthermore, when a first feature is described as being "above," "above," or "above" a second feature, it may mean that the first feature is directly above or diagonally above the second feature, or simply means that the first feature is at a higher level than the second feature. When a first feature is described as being "below," "below," or "below" a second feature, it may mean that the first feature is directly below or diagonally below the second feature, or simply means that the first feature is at a lower level than the second feature.

[0033] It should be noted that if an element is referred to as being "fixed to" or "disposed on" another element, it may be directly on the other element or there may be an intermediate element. If an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be an intermediate element. If any, the terms "vertical", "horizontal", "upper", "lower", "left", "right" and similar expressions used in this application are for illustrative purposes only and do not represent the only embodiment.

[0034] See Figure 1 , Figure 1 A schematic diagram of a conventional warpage measurement device is shown. A chuck 11 is placed on a measurement table 10, and a wafer 13 is placed on the chuck 11. Chuck 11 is used to secure wafer 13. A sensor 12 is located on the side of chuck 11 away from the measurement table 10. The position of sensor 12 is movable. When sensor 12 moves directly above wafer 13, the sensor 12 uses a probe to obtain the distance between sensor 12 and multiple points on wafer 13, thereby detecting the warpage data and the degree of warpage of wafer 13.

[0035] See Figure 2 , Figure 2 Schematic diagrams of the warpage measurement devices in two parallel embodiments of the present application are shown. The warpage measurement device provided in one embodiment of the present application includes: a measurement platform 10; a chuck 11 located on the upper side of the measurement platform 10 for securing a wafer 13 and not contacting the edge of the wafer 13; and a sensor 12 located on the side of the chuck 11 near the measurement platform 10 for measuring the warpage of the wafer 13.

[0036] Since the wafer 13 (circular piece) may be warped to a certain extent, the wafer 13 has a convex surface and a concave surface.

[0037] Optionally, the chuck 11 can fix the wafer 13 by contacting or non-contacting the convex surface of the wafer 13, and does not contact the edge area of ​​the wafer 13. For example, the convex surface of the wafer 13 is adsorbed by a contact suction cup, or the convex surface of the wafer 13 is adsorbed by a non-contact suction cup. The chuck 11 fixes the wafer 13 by adsorbing the convex surface of the wafer 13. At this time, the sensor 12 is located on the side of the chuck 11 close to the measuring table 10. The sensor 12 can be located on the measuring table 10. The measuring table 10 can be provided with a slide rail. The sensor 12 moves on the slide rail, thereby changing the position of the sensor 12. By collecting the height data of each point on the concave surface of the wafer 13, the warping data of the wafer 13 is obtained.

[0038] Figure 2 Also shown is a warpage measurement device provided in another embodiment of the present application, including a measuring table 10; a chuck 11, located on the upper side of the measuring table 10, for fixing the wafer 13 and not contacting the edge area of ​​the wafer 13; a sensor 12, located on the side of the chuck 11 away from the measuring table 10, for measuring the warpage of the wafer 13.

[0039] Optionally, the chuck 11 is located on the upper side of the measuring table 10, or on the measuring table 10. The chuck 11 is used to fix the wafer 13, and the chuck 11 does not contact the edge area of ​​the wafer 13. By providing an ejection mechanism 113 on the existing chuck 11, the ejection mechanism 113 contacts the concave surface of the wafer 13, and the ejection mechanism 113 does not contact the edge area of ​​the wafer 13. The chuck 11 fixes the wafer 13 by supporting the concave surface of the wafer 13 through the ejection mechanism 113. At this time, the sensor 12 is located on the side of the chuck 11 away from the measuring table 10. The position of the sensor 12 can be moved, and the warping data of the wafer 13 is obtained by collecting the height data of each point on the convex surface of the wafer 13.

[0040] In this embodiment, since the chuck does not contact the edge area of ​​the wafer, the chuck will not lift or support the edge area of ​​the wafer, and the edge area of ​​the wafer is not supported by the chuck. Therefore, the warpage data measured by the sensor is more accurate and closer to the warpage data of the wafer during subsequent wafer processing, and the warpage data is more realistic.

[0041] Combine Figure 3 , Figure 3 It is shown that in some embodiments, the chuck 11 includes a first chuck 111; the first chuck 111 is used for non-contact adsorption of the wafer 13; accordingly, the sensor 12 is located on the side of the first chuck 111 close to the measuring table 10, and the sensor 12 can be located on the measuring table 10 or inside the measuring table 10.

[0042] The first chuck 111 may be a non-contact vacuum suction cup, or other vacuum suction cup that meets the requirements of this application.

[0043] Optionally, the first chuck 111 is fixed in a certain position and is used for non-contact adsorption of the wafer 13. The sensor 12 is located on the side of the first chuck 111 close to the measuring table 10. The sensor 12 is located on the measuring table 10. The measuring table 10 may be provided with a slide rail. The sensor 12 moves on the slide rail, thereby changing the position of the sensor 12. By collecting height data of various points on the concave surface of the wafer 13, the warpage data of the wafer 13 is obtained.

[0044] In this embodiment, the first chuck non-contactly adsorbs the wafer, so that the first chuck does not contact the edge area of ​​the wafer, which is more realistic to the warpage value in actual work, thereby obtaining more accurate warpage data of the wafer.

[0045] Alternatively, as Figure 4 As shown, the first chuck 111 includes a Bernoulli suction cup. The Bernoulli suction cup is arranged above the measuring table 10. The airflow of the Bernoulli suction cup simulates the working condition of sucking the wafer 13 in the working condition, which is more realistic than the warpage value in actual work. As long as the airflow is provided, a negative pressure can be formed on the convex surface of the wafer 13. As long as the force of the Bernoulli suction cup is greater than 0, the influence of the gravity of the wafer 13 on the warpage of the wafer 13 is reduced. A sensor 12 is provided on the measuring table 10. The measuring table 10 can be provided with a slide rail. The sensor 12 moves on the slide rail, thereby changing the position of the sensor 12. By collecting the height data of each point on the concave surface of the wafer 13, the warpage data of the wafer 13 is obtained.

[0046] Alternatively, the measuring platform 10 may be made of a transparent material and have a hollow interior. The sensor 12 may also be located within the hollow space of the measuring platform 10. During testing, the probe of the sensor 12 moves within the hollow space, and the distance between the probe and multiple points on the wafer 13 is measured to detect the degree of warpage of the wafer 13.

[0047] For example, a controller (not shown) may be provided to connect to the sensor, and the controller receives distance data of multiple points provided by the sensor to detect the degree of warping of the wafer.

[0048] In this embodiment, the Bernoulli chuck is used to non-contactly adsorb the wafer, so that the Bernoulli chuck does not contact the edge area of ​​the wafer, which is more realistic to the warpage value in actual work, thereby obtaining more accurate wafer warpage data.

[0049] Combine Figure 5 As shown, Figure 5 A schematic diagram of a warpage measurement device in an embodiment of the present application is shown. In some embodiments, the chuck 11 includes a second chuck 112; one side of the second chuck 112 is connected to the measuring table 10, and the other side away from the measuring table 10 is provided with an ejection mechanism 113, which is used to fix the wafer 13; accordingly, the sensor 12 is located on the upper side of the ejection mechanism 113.

[0050] Optionally, the second chuck 112 is located on the upper side of the measuring table 10, or on the measuring table 10. The second chuck 112 is used to fix the wafer 13, and the second chuck 112 does not contact the edge area of ​​the wafer 13. By providing an ejection mechanism 113 on the second chuck 112, the ejection mechanism 113 contacts the concave surface of the wafer 13, and the ejection mechanism 113 at least contacts the center of the wafer 13, and does not contact the edge area of ​​the wafer 13. The second chuck 112 fixes the wafer 13 by supporting the concave surface of the wafer 13 through the ejection mechanism 113. At this time, the sensor 12 is located on the side of the second chuck 112 away from the measuring table 10. The position of the sensor 12 can be moved, and the warping data of the wafer 13 is obtained by collecting the height data of each point on the convex surface of the wafer 13.

[0051] In this embodiment, the ejection mechanism is used instead of relying on the reaction force of gravity at the edge for a certain support. The closer the ejection mechanism 113 is to the center of the wafer 13, the better the effect of simulating the warping of the wafer in actual work.

[0052] In some embodiments, one end of the ejection mechanism 113 is connected to the other side of the second chuck 112 , and a rubber pad is provided on the other end away from the second chuck 112 , and the rubber pad is used to contact the wafer 13 .

[0053] Optionally, one end of the ejection mechanism 113 is connected to a side of the second chuck 112 away from the measuring table 10. The ejection mechanism 113 can be fixedly connected to the second chuck 112 or detachably connected to the second chuck 112. A rubber pad can also be provided on the other end away from the second chuck 112 to contact the wafer 13. The rubber pad can be any of a rubber pad, a silicone pad, and a spring rubber pad.

[0054] In this embodiment, by providing a rubber pad at the end of the ejection mechanism away from the second chuck, scratches on the wafer can be effectively prevented or reduced when the ejection mechanism contacts the wafer.

[0055] In some embodiments, the ejection mechanism 113 is one of an annular ejection mechanism, a rectangular ejection mechanism, and a polygonal ejection mechanism.

[0056] Optionally, the ejection structure may be any one of an annular ejection structure, a rectangular ejection structure, a triangular ejection structure, a polygonal ejection structure, or other ejection structures of other shapes that do not contact the edge area of ​​the wafer 13. The annular ejection structure may be a true circular ejection structure or an elliptical ejection structure.

[0057] In this embodiment, an ejection mechanism is provided instead of relying on the reaction force of gravity at the edge for a certain support, and the second chuck does not contact the edge area of ​​the wafer, so that more accurate wafer warpage data can be obtained.

[0058] Combine Figure 6 As shown, Figure 6 It is shown that in some embodiments of the present application, the annular ejection mechanism in the aforementioned embodiment includes: cylindrical bodies arranged in a ring.

[0059] The columnar body can be a jack pipe, a jack cylinder, a jack rod or other supporting body, and the jack pipe, jack cylinder, jack rod or other supporting body can be a hollow structure or a solid structure. The columnar body can be a cylindrical body, a quadrilateral columnar body, a polygonal columnar body, etc.

[0060] Optionally, the annular ejection mechanism includes ejection tubes, ejection cylinders or ejection rods that are evenly arranged in an annular pattern. Figure 6 As shown, the annular ejection structure includes six uniformly arranged columns. The annular ejection mechanism can also include annular non-uniformly arranged ejection tubes, ejection cylinders or ejection rods.

[0061] It should be noted that the number of the circularly arranged columns is not specifically limited, and can be either an odd number or an even number.

[0062] In this embodiment, the wafer is contacted by the annular ejection mechanism, which can ensure that the wafer is subjected to uniform force and minimize the deformation of the wafer caused by the force, thereby measuring the warpage data of the wafer more accurately.

[0063] In some embodiments, the number of the columns in the aforementioned embodiments is an even number.

[0064] Alternatively, as Figure 6 As shown, the number of the columns is 6, which is an even number. The number of the columns can also be 8, 10, 12, etc.

[0065] In this embodiment, by limiting the even number of columns in the ejection structure, it is possible to ensure that the wafer is subjected to uniform force, and minimize the deformation of the wafer due to the force, so that the warpage data of the wafer can be measured more accurately.

[0066] In some embodiments, one end of each columnar body in the above embodiments is connected to the other surface of the second chuck 112 , and a rubber pad is provided on the other end away from the second chuck 112 , and the rubber pad is used to contact the wafer 13 .

[0067] Optionally, one end of each column is connected to the other side of the second chuck 112, and a rubber pad is provided on the other end of each column away from the second chuck 112, and the rubber pad is used to contact the wafer 13. The rubber pad can be any one of a rubber pad, a silicone pad or a spring rubber pad.

[0068] In some embodiments, one end of each columnar body in the above embodiment is connected to the other surface of the second chuck 112 , and the other end away from the second chuck 112 is configured as a spherical surface for contacting the wafer 13 .

[0069] Optionally, one end of each column is connected to the other surface of the second chuck 112 , and the other end of each column away from the second chuck 112 is configured as a spherical surface, which is used to contact the wafer 13 .

[0070] In this embodiment, by setting a spherical surface at the end of the column away from the second chuck 112, or by providing a rubber pad at the end of the column away from the second chuck, scratches on the wafer can be effectively prevented and reduced when contacting the wafer.

[0071] In some embodiments, the outer radius of the annular ejection mechanism in the above embodiments is smaller than the radius of the wafer 13 .

[0072] Alternatively, if the radius of wafer 13 is X, the outer radius of the annular ejection mechanism is Y, where X>Y. In this case, XY represents the edge region of wafer 13. The specific values ​​are not limited here. The outer radius of the annular ejection mechanism is smaller than the radius of wafer 13 to ensure that the annular ejection mechanism does not contact the edge region of wafer 13.

[0073] In this embodiment, since the second chuck does not contact the edge area of ​​the wafer, the second chuck will not lift or support the edge area of ​​the wafer. The edge area of ​​the wafer is not affected by the support force of the second chuck, which can more simulate the warping of actual work. Therefore, the warping data measured by the sensor is more accurate and closer to the warping data of the wafer during subsequent wafer processing, and the warping data is more realistic.

[0074] See Figure 7 , Figure 7 It is shown that in some embodiments, the chuck 11 includes a first chuck 111 and a second chuck 112 provided with an ejection mechanism 113; the first chuck 111 is used for non-contact adsorption of the wafer 13; one side of the second chuck 112 is connected to the measuring table 10, and the other side away from the measuring table 10 is provided with an ejection mechanism 113, and the ejection mechanism 113 is used to fix the wafer 13; accordingly, the sensor 12 can be set to be multiple, wherein one sensor is located on the lower side of the ejection mechanism 113, such as the measuring table 10 or inside the measuring table 10; the other sensor is located on the upper side of the ejection mechanism 113, such as the upper side of the first chuck.

[0075] In some embodiments, the chuck 11 includes a first chuck 111 and a second chuck 112 provided with an ejection mechanism 113; the first chuck 111 is used for non-contact adsorption of the wafer 13; one side of the second chuck 112 is connected to the measuring table 10, and the other side away from the measuring table 10 is provided with an ejection mechanism 113, and the ejection mechanism 113 is used to fix the wafer 13; the sensor is located on the lower side of the ejection mechanism 113, such as the measuring table 10 or inside the measuring table 10.

[0076] In this embodiment, a non-contact first chuck and a second chuck provided with an ejection mechanism are used to fix or support the wafer, and the first chuck and the second chuck do not contact the edge area of ​​the wafer, which more simulates the warpage value in actual work, thereby obtaining more accurate wafer warpage data.

[0077] The technical features of the above-mentioned embodiments can be combined arbitrarily. In order to make the description concise, not all possible combinations of the technical features in the above-mentioned embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0078] The above-described embodiments merely represent several implementation methods of the present application. While the descriptions are relatively specific and detailed, they should not be construed as limiting the scope of the patent application. It should be noted that a person of ordinary skill in the art may make various modifications and improvements without departing from the spirit of the present application, and these modifications and improvements fall within the scope of protection of the present application. Therefore, the scope of protection of the present patent application shall be determined by the appended claims.

Claims

1. A warpage measuring device, characterized in that: The device comprises: Measuring platform; a chuck, located on the upper side of the measuring table, for fixing the wafer and not contacting the edge area of ​​the wafer; The sensor is located on a side of the chuck close to the measuring table or a side away from the measuring table, and is used to measure the warpage of the wafer.

2. The device according to claim 1, characterized in that The chuck includes a first chuck; the first chuck is used for non-contact adsorption of wafers.

3. The device according to claim 2, characterized in that The sensor is located on a side of the first chuck close to the measuring platform.

4. The device according to claim 2, characterized in that The first chuck includes a Bernoulli chuck.

5. The device according to claim 1 or 2, characterized in that The chuck includes a second chuck; one side of the second chuck is connected to the measuring table, and the other side away from the measuring table is provided with an ejection mechanism, and the ejection mechanism is used to at least contact the center of the wafer.

6. The device according to claim 5, characterized in that The sensor is located on the upper side and / or the lower side of the ejection mechanism.

7. The device according to claim 5, characterized in that One end of the ejection mechanism is connected to the other surface of the second chuck, and a rubber pad is provided on the other end away from the second chuck, and the rubber pad is used to contact the wafer.

8. The device according to claim 5, characterized in that The ejection mechanism is one of an annular ejection mechanism, a rectangular ejection mechanism, and a polygonal ejection mechanism; the annular ejection mechanism includes: cylindrical bodies arranged in an annular manner.

9. The device according to claim 8, characterized in that One end of each of the columnar bodies is connected to the other surface of the second chuck, and a rubber pad is provided on the other end away from the second chuck, and the rubber pad is used to contact the wafer; or One end of each of the columnar bodies is connected to the other surface of the second chuck, and the other end away from the second chuck is configured as a spherical surface, and the spherical surface is used to contact the wafer.

10. The device according to claim 8 or 9, characterized in that The outer radius of the annular ejection mechanism is smaller than the radius of the wafer.

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