Gas spraying device and semiconductor processing equipment

Abstract

The utility model discloses a gas spraying device and semiconductor processing equipment, and the gas spraying device comprises a spraying head body which comprises an upper surface and a lower surface which are opposite to each other; a first concave part is formed on the upper surface of the spray head body, and a second concave part is formed on the bottom surface of the first concave part; a first spraying hole and a second spraying hole are further formed in the spraying head body, the first spraying hole penetrates from the upper surface of the spraying head body to the lower surface of the spraying head body, and the second spraying hole penetrates from the bottom surface of the second concave part to the lower surface of the spraying head body; the first spraying holes and the second spraying holes are uniformly distributed in the lower surface of the spraying head body; the supporting assembly is fixedly connected with the spraying head body, comprises a supporting plate and is fixed in the first concave part; the supporting rod is connected with the supporting plate; the supporting plate is matched with the second concave part to form a gas containing cavity, and a first through hole communicated with the gas containing cavity is formed in the supporting plate.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor preparation, in particular to a gas spraying device and semiconductor processing equipment. Background Art

[0002] In the semiconductor manufacturing process, a gas showerhead is typically used to introduce process gases into the reaction chamber for etching, deposition, and other processes on the substrates within the chamber. In recent years, as substrates have become larger, the area of ​​the gas showerhead has also continued to grow, sometimes exceeding four square meters. During substrate processing, the process temperatures often reach as high as 300°C or even 400°C. Such high temperatures can cause the gas showerhead (especially the larger ones) to expand and thermally deform.

[0003] Currently, supports are typically installed directly around and in the center of the gas showerhead to lift and prevent deformation. However, this conventional support arrangement can block certain nozzle holes on the showerhead, resulting in uneven flow of process gas into the reaction chamber and impacting substrate fabrication yield. Furthermore, the existing support provides insufficient tension, making it prone to breakage during use. Therefore, adjustments to the structure of the gas showerhead and its supports are necessary. Utility Model Content

[0004] The purpose of the utility model is to provide a gas spraying device and semiconductor processing equipment, which can not only improve the connection stability between the support component and the shower head body, but also ensure the uniformity of the introduced process gas.

[0005] In order to achieve the above object, the present invention is implemented through the following technical solutions:

[0006] A gas spraying device, comprising:

[0007] A shower head body comprising an upper surface and a lower surface opposite to each other; a first recessed portion is formed on the upper surface of the shower head body, and a second recessed portion is formed on the bottom surface of the first recessed portion;

[0008] The shower head body is further provided with a first spray hole and a second spray hole. The first spray hole extends from the upper surface of the shower head body to the lower surface of the shower head body, and the second spray hole extends from the bottom surface of the second recessed portion to the lower surface of the shower head body. The first spray hole and the second spray hole are evenly distributed on the lower surface of the shower head body.

[0009] A support assembly is fixedly connected to the shower head body; the support assembly includes: a support plate fixed in the first recessed portion; a support rod fixedly connected to the support plate and used to lift the shower head body; and the support plate and the second recessed portion cooperate to form a gas containing cavity, and a first through hole connected to the gas containing cavity is provided on the support plate.

[0010] Optionally, the gas accommodating chamber includes a first sub-accommodating chamber and a second sub-accommodating chamber connected to each other vertically, the first sub-accommodating chamber is close to the first recessed portion, and the cross-sectional area of ​​the first sub-accommodating chamber is smaller than the cross-sectional area of ​​the second sub-accommodating chamber.

[0011] Optionally, the longitudinal section of the first sub-accommodating cavity is rectangular, and the longitudinal section of the second sub-accommodating cavity is an isosceles trapezoid or a rectangle.

[0012] Optionally, the longitudinal section of the gas containing chamber is an isosceles trapezoid.

[0013] Optionally, an end surface of the support plate away from the gas accommodating chamber is flush with an upper surface of the shower head body.

[0014] Optionally, the cross-sectional shape of the support plate matches the cross-sectional shape of the first recessed portion.

[0015] Optionally, the support plate is further provided with at least two second through holes, the bottom surface of the first recess is provided with connecting holes corresponding to the second through holes, and the support assembly is fixedly connected to the shower head body through the corresponding second through holes and the connecting holes.

[0016] Optionally, the connecting hole is a threaded hole, and the second through hole is a smooth hole or a threaded hole.

[0017] Optionally, the second through hole is a countersunk hole, and a top surface of a connecting piece for connecting the connecting hole and the second through hole is not higher than an upper surface of the shower head body.

[0018] Optionally, the connecting piece does not extend into the gas containing cavity.

[0019] Optionally, a portion of the first spray hole is provided at an edge of the support plate, and another portion of the first spray hole is provided at an edge of the first recessed portion; and after the support plate is fixed to the first recessed portion, the portion of the first spray hole and the other portion of the first spray hole are combined into the first spray hole.

[0020] Optionally, the area of ​​the bottom surface of the second recessed portion is not greater than the area of ​​the bottom surface of the first recessed portion.

[0021] Optionally, the orthographic projection of the connecting hole on the surface where the bottom surface of the second recessed portion is located falls into the bottom surface of the second recessed portion.

[0022] Optionally, the first through hole and the second spray hole are arranged opposite to each other.

[0023] Optionally, the support rod and the support plate are integrated.

[0024] In another aspect, the present invention further provides a semiconductor processing device, comprising:

[0025] reaction chamber;

[0026] a top cover, arranged on the top of the reaction chamber;

[0027] A base is provided at the bottom of the reaction chamber and is used to support the substrate;

[0028] The gas spraying device as described above is located between the top cover and the base; the edge of the shower head body is fixedly connected to the top cover or the side wall of the reaction chamber, and the support rod is fixedly connected to the top cover.

[0029] Optionally, a gas channel is provided in the top cover;

[0030] A gas distribution cavity communicating with the gas channel is formed between the upper surface of the shower head body and the top cover;

[0031] A reaction area is formed between the lower surface of the shower head body and the base; and process gas flows into the reaction area through the gas channel, the gas distribution cavity, and the first and second nozzle holes in the shower head body to process the substrate.

[0032] Optionally, a seal is provided between the support rod and the top cover.

[0033] Compared with the prior art, the present invention has at least one of the following advantages:

[0034] The utility model provides a gas spray device and semiconductor processing equipment. A support plate in a support assembly is fixed within a first recessed portion of a showerhead body. A support rod lifts the showerhead body via the support plate, effectively increasing the strength and stability of the connection between the support assembly and the showerhead body. Furthermore, the support plate cooperates with the second recessed portion of the showerhead body to form a gas-containing chamber. A first through-hole communicating with the gas-containing chamber is provided on the support plate, ensuring that the support plate does not obstruct the flow of process gas to the second nozzle orifice. This allows both the first and second nozzle orifices on the showerhead body to be fully operational, thereby enhancing the stability of the connection between the support assembly and the showerhead body while ensuring uniformity in the flow of process gas.

[0035] In the present invention, at least two second through holes are provided on the support plate, and connecting holes corresponding to the second through holes are provided on the bottom surface of the first recessed portion, and the support is fixed to the shower head body through the corresponding second through holes and the connecting holes, thereby ensuring the stability of the connection between the support plate and the shower head body, and further ensuring the stability of the connection between the support assembly and the shower head body.

[0036] In the present invention, the end surface of the support plate away from the gas accommodating cavity is flush with the upper surface of the shower head body to prevent the support plate from affecting the flow direction of the process gas on the upper surface of the shower head body, thereby ensuring the uniformity of the introduced process gas.

[0037] In the present invention, the top surface of the connector that connects the connecting hole and the second through hole is not higher than the upper surface of the shower head body, thereby preventing the top of the connector from affecting the flow direction of the process gas on the upper surface of the shower head body; at the same time, the connector does not extend into the gas containing cavity, so as to prevent the bottom of the connector from affecting the flow direction of the process gas in the gas containing cavity, thereby further ensuring the uniformity of the introduced process gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0038] Figure 1 This is a structural diagram of a semiconductor processing device provided by one embodiment of the present utility model;

[0039] Figure 2 yes Figure 1 A is an enlarged schematic diagram;

[0040] Figure 3 This is a schematic structural diagram of a second sub-accommodating chamber in a gas spray device provided by one embodiment of the present utility model, wherein the longitudinal section thereof is rectangular;

[0041] Figure 4 This is a structural schematic diagram of a second sub-accommodating chamber in a gas spray device provided by an embodiment of the present utility model, wherein the longitudinal section thereof is an isosceles trapezoid;

[0042] Figure 5 This is a structural schematic diagram of a gas containing chamber in a gas spray device provided by one embodiment of the present utility model, wherein the longitudinal section of the gas containing chamber is an isosceles trapezoid;

[0043] Figure 6 This is a three-dimensional diagram of a shower head body in a gas shower device provided by one embodiment of the present invention;

[0044] Figure 7 It is a structural schematic diagram of a support assembly in a gas spray device provided by one embodiment of the present utility model. DETAILED DESCRIPTION

[0045] The following is a further detailed description of a gas spray device and semiconductor processing equipment proposed by the present invention in conjunction with the accompanying drawings and specific embodiments. According to the following description, the advantages and features of the present invention will become clearer. It should be noted that the drawings are in a very simplified form and use non-precise proportions, which are only used to conveniently and clearly assist in explaining the purpose of the implementation of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the drawings. It should be noted that the structure, proportion, size, etc. illustrated in the drawings of this specification are only used to match the content disclosed in the specification for people familiar with this technology to understand and read, and are not used to limit the implementation conditions of the present invention, so they have no technical significance. Any modification of the structure, change in the proportional relationship or adjustment of the size should still fall within the scope of the technical content disclosed by the present invention without affecting the efficacy and purpose that can be achieved by the present invention.

[0046] It should be noted that, in this document, relational terms such as first and second, etc., are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply the existence of any such actual relationship or order between these entities or operations. Moreover, the terms "comprises," "comprising," or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article, or device comprising a series of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or device. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of other identical elements in the process, method, article, or device comprising the element.

[0047] Combined with attachment Figures 1 to 7 As shown, this embodiment provides a gas spraying device, including: a spray head body 110, which includes opposite upper surfaces 1101 (such as Figure 3 ) and the lower surface 1102 (as shown Figure 3 As shown); a first recessed portion 111 is formed on the upper surface 1101 of the shower head body 110, and a second recessed portion 112 is formed on the bottom surface 1111 of the first recessed portion 111; the shower head body 110 is further provided with a first spray hole 113 and a second spray hole 114, the first spray hole 113 penetrates from the upper surface 1101 of the shower head body 110 to the lower surface 1102 of the shower head body 110, and the second spray hole 114 penetrates from the bottom surface 1121 of the second recessed portion 112 to the lower surface 1102 of the shower head body 110, that is, the height h1 of the first spray hole 113 is greater than the height h2 of the second spray hole 114; and the first spray hole 113 and the second spray hole 114 are evenly distributed on the lower surface 1102 of the shower head body.

[0048] The gas spraying device further comprises: a support assembly 120, which is fixedly connected to the spray head body 110. The support assembly 120 comprises: a support plate 121 (such as Figure 7 As shown), fixed in the first recessed portion 111; support rod 122 (as Figure 2 、 Figure 7 As shown), it is fixedly connected to the support plate 121 for lifting the shower head body 110; and the support plate 121 cooperates with the second recessed portion 112 to form a gas accommodating chamber 130 (as shown Figure 3 、 Figure 4 、 Figure 5 The support plate 121 is provided with a first through hole 123 (as shown) communicating with the gas containing cavity 130. Figure 7 shown).

[0049] Specifically, the number of the support assembly 120 and the number of the first recessed portions 111 in the gas spray device are the same, and both are multiple, that is, the support assembly 120 and the first recessed portions 111 are arranged in a one-to-one correspondence. The support plate 121 in the support assembly 120 is fixedly connected to the bottom of the corresponding first recessed portion 111 to achieve a fixed connection between the support assembly 120 and the shower head body 110; the support rod 122 in the support assembly 120 can lift the shower head body 110 through the support plate 121 to prevent the shower head body 110 from deforming in a high-temperature environment. In this embodiment, the provision of the support plate 121 can increase the contact area between the support assembly 120 and the shower head body 110, thereby effectively increasing the connection strength and stability between the support assembly 120 and the shower head body 110, thereby improving the reliability of the support assembly 120. Optionally, the support rod 122 and the support plate 121 are integrated to ensure the connection stability between the support rod 122 and the support plate 121, further improve the reliability of the support assembly 120, and reduce manufacturing costs.

[0050] More specifically, all first recesses 111 are evenly distributed on the upper surface of the showerhead body 110, so that all support assemblies 120 embedded in the first recesses 111 are also evenly distributed on the upper surface of the showerhead body 110. This allows the support assemblies 120 to evenly lift the showerhead body 110, thereby evenly applying force to the showerhead body 110 and preventing the showerhead body 110 from tilting to one side. This effectively improves the connection stability between the support assemblies 120 and the showerhead body 110 and the reliability of the gas spray device. Optionally, the number of support assemblies 120 is no less than six; the support assemblies 120 are made of aluminum or stainless steel, and the showerhead body 110 is made of aluminum, but the present invention is not limited to this.

[0051] Specifically, if Figure 7 As shown, the support plate 121 includes a relative upper end surface 1211 and a lower end surface (not shown in the figure), and when the support plate 121 is fixed in the first recessed portion 111, the lower end surface of the support plate 121 contacts the bottom surface 1111 of the first recessed portion 111; the first through hole 123 on the support plate 121 passes through the upper end surface 1211 of the support plate 121 to the lower end surface of the support plate 121 to communicate with the gas containing chamber 130.

[0052] Furthermore, after the support assembly 120 is fixedly connected to the showerhead body 110, during use of the gas spray device, process gas can enter the reaction area below the gas spray device through two paths: one path: the process gas flows directly into the reaction area through the first nozzle 113; the other path: the process gas flows into the gas containing chamber 130 through the first through-hole 123 and then flows into the reaction area through the second nozzle 114. In this case, the provision of the support plate 121 does not hinder the flow of the process gas to the second nozzle 114, allowing both the first nozzle 113 and the second nozzle 114 on the showerhead body 110 to be fully usable. This improves the stability of the connection between the support assembly 120 and the showerhead body 110 while ensuring the uniformity of the process gas entering the reaction area. More specifically, the area of ​​the bottom surface 1121 of the second recessed portion 112 is not larger than the area of ​​the bottom surface 1111 of the first recessed portion 111, so as to ensure that the gas containing chamber 130 is not connected to the first nozzle 113, thereby ensuring that the process gas only flows into the reaction area through the above two paths, thereby avoiding unnecessary diversion of the process gas in the process of flowing into the reaction area.

[0053] Specifically, the number of the first nozzles 113 and the second nozzles 114 is multiple, and the first nozzles 113 and the second nozzles 114 are evenly distributed on the lower surface 1102 of the showerhead body, so that the process gas can flow evenly into the reaction area through the first nozzles 113 and the second nozzles 114, thereby ensuring the uniformity of the process treatment results. Optionally, the number of the first through holes 123 is multiple, and the first through holes 123 are evenly distributed on the support plate 121. Preferably, the first through holes 123 and the second nozzles 114 are arranged opposite each other, so that after the process gas flows into the gas holding chamber 130 through the first through holes 123, it can quickly flow through the second nozzles 114 into the reaction area. Optionally, a contraction hole 116 is provided in each of the first nozzles 113 and the second nozzles 114, and the aperture of the contraction hole 116 is smaller than the aperture of the first nozzles 113 and the second nozzles 114, so as to adjust the flow rate of the process gas, but the present invention is not limited to this.

[0054] In some embodiments, as Figure 3 and Figure 4 As shown, the gas accommodating chamber 130 includes a first sub-accommodating chamber 131 and a second sub-accommodating chamber 132 connected to each other from top to bottom. The first sub-accommodating chamber 131 is close to the upper surface 1101 of the shower head body 110, and the cross-sectional area of ​​the first sub-accommodating chamber 131 is smaller than the cross-sectional area of ​​the second sub-accommodating chamber 132, so that the gas accommodating chamber 130 has a small upper and large lower structure to ensure the number and arrangement density of the second nozzles 114, thereby ensuring the uniformity of the process gas entering the reaction area. Optionally, the longitudinal section of the first sub-accommodating chamber 131 is rectangular, and the longitudinal section of the second sub-accommodating chamber 132 is rectangular (as shown in FIG. Figure 3 as shown) or an isosceles trapezoid (as Figure 4 Optionally, the cross section of the first sub-accommodating cavity 131 is snowflake-shaped (as shown); Figure 6 As shown in FIG, the cross section of the second sub-accommodating cavity 132 is circular or polygonal, but the present invention is not limited thereto.

[0055] In some embodiments, as Figure 5 As shown, the longitudinal section of the gas-containing chamber 130 is an isosceles trapezoid, which also makes the gas-containing chamber 130 a structure that is small at the top and large at the bottom; optionally, the cross-section of the gas-containing chamber 130 is circular or polygonal. In this case, the gas-containing chamber 130 can be a truncated cone or a frustum that is small at the top and large at the bottom, but the present invention is not limited to this.

[0056] Please continue to refer to Figure 2 、 Figure 6 and Figure 7, the cross-sectional shape of the support plate 121 matches or is identical to the cross-sectional shape of the first recess 111, so that the support plate 121 can be embedded in the first recess 111. Optionally, the cross-sectional shapes of the first recess 111 and the support plate 121 are both regular hexagons. Optionally, when the support plate 121 is fixed to the first recess 111, the end face of the support plate 121 away from the gas containing chamber 130 (i.e., the upper end face 1211 of the support plate 121) is flush with the upper surface 1101 of the shower head body 110 to prevent the support plate 121 from affecting the flow direction of the process gas on the upper surface 1101 of the shower head body 110, thereby ensuring the uniformity of the process gas entering the reaction chamber.

[0057] Please continue to refer to Figure 2 、 Figure 6 and Figure 7 The support plate 121 is further provided with at least two second through holes 124 (such as Figure 7 As shown), a connection hole 115 corresponding to the second through hole 124 is provided on the bottom surface 1111 of the first recessed portion 111 (as shown Figure 6 As shown), the support assembly 120 is fixedly connected to the shower head body 110 through the corresponding second through hole 124 and the connecting hole 115.

[0058] Specifically, the second through holes 124 are evenly distributed on the support plate 121 and are connected to the support plate 121 by connecting members 125 (such as Figure 2 (as shown) the second through hole 124 is connected to the connecting hole 115 to uniformly fix the support plate 121 to the showerhead body 110, thereby ensuring the stability of the connection between the support plate 121 and the showerhead body 110, and further ensuring the stability of the connection between the support assembly 120 and the showerhead body 110. More specifically, the orthographic projection of the connecting hole 115 on the surface where the bottom surface 1121 of the second recessed portion 112 is located falls within the bottom surface 1121 of the second recessed portion 112. When the connecting member 125 is installed in the connecting hole 115, the connecting member 125 does not block any nozzle, thereby making all the nozzles on the showerhead body 110 usable. Furthermore, while achieving a fixed connection between the support assembly 120 and the showerhead body 110, the uniformity of the process gas introduced into the reaction area is ensured.

[0059] Optionally, the second through hole 124 is a countersunk hole, so that the top surface of the connector 125 connecting the connecting hole 115 and the second through hole 124 is no higher than the upper surface 1101 of the showerhead body 110. This prevents the top of the connector 125 from affecting the flow direction of the process gas on the upper surface 1101 of the showerhead body 110, thereby ensuring the uniformity of the process gas entering the reaction area. Optionally, the connector 125 does not extend into the gas-containing chamber 130, thereby preventing the bottom of the connector 125 from affecting the flow direction of the process gas in the gas-containing chamber 130, further ensuring the uniformity of the process gas entering the reaction area. Preferably, the connecting hole 115 is not connected to the gas-containing chamber 130, thereby ensuring that the connector 125 does not extend into the gas-containing chamber 130. Optionally, the number of the second through holes 124 is six; the connecting hole 115 is a threaded hole, the second through hole 124 is a smooth hole or a threaded hole, and the connecting member 125 is a bolt, but the present invention is not limited thereto.

[0060] Furthermore, in some embodiments, Figure 3 、 Figure 4 、 Figure 6 and Figure 7 As shown, a portion 1131 of the first spray hole 113 is provided at the edge of the support plate 121, and another portion 1132 of the first spray hole 113 is provided at the edge of the first recessed portion 111; and when the support plate 121 is fixed to the first recessed portion 111, the portion 1131 of the first spray hole 113 and the other portion 1132 of the first spray hole 113 are combined into the first spray hole 113, so that the width of the support plate 121 extending from the second through hole 124 in the direction away from the support shaft 122 can be increased under the premise of ensuring the integrity of the first spray hole 113, that is, the width at the edge of the support plate 121 is increased, so that when the support plate 121 is fixedly connected to the shower head body 110 through the corresponding second through hole 124 and the connecting hole 115, the connection rigidity and strength of the support plate 121 can be increased, but the present invention is not limited to this.

[0061] On the other hand, combined with Figures 1-2 As shown, this embodiment also provides a semiconductor processing equipment, including: a reaction chamber 200; a top cover 210, arranged on the top of the reaction chamber 200; a base 220, arranged at the inner bottom of the reaction chamber 200, for carrying a substrate 230; the gas spraying device as described above, located between the top cover 210 and the base 220; and the edge of the shower head body 110 is fixedly connected to the top cover 210 or the side wall of the reaction chamber 200, and the support rod 122 is fixedly connected to the top cover 210.

[0062] It can be understood that a gas channel 2101 is provided in the top cover 210; a gas distribution chamber 211 connected to the gas channel 2101 is formed between the upper surface 1101 of the shower head body 110 and the top cover 210; a reaction area 221 is formed between the lower surface 1102 of the shower head body and the base 220; and the process gas is introduced into the reaction area 221 through the gas channel 2101, the gas distribution chamber 211 and the first nozzle 113 and the second nozzle 114 in the shower head body 110 to perform process treatment on the substrate 230.

[0063] Specifically, the gas channel 2101 can be connected to a gas source (not shown) outside the reaction chamber 200, and the process gas in the gas source first flows into the gas distribution chamber 211 through the gas channel 2101. The process gas is then divided into two paths and flows into the reaction area 221. One path is: the process gas flows directly into the reaction area 221 through the first nozzle 113; the other path is: the process gas flows into the gas holding chamber 130 through the first through hole 123, and then flows into the reaction area 221 through the second nozzle 114. After the process gas flows evenly into the reaction area 221 through the first nozzle 113 and the second nozzle 114, it is ionized into plasma to perform deposition or etching processes on the substrate 230.

[0064] Specifically, a third through hole (not shown) is provided inside the top cover 210, a nut 212 is provided at the top end of the third through hole, and the support rod 122 can pass through the third through hole and be threadedly connected to the nut 212 to achieve a fixed connection between the support rod 122 and the top cover 210, so that the support rod 122 can lift the shower head body 110, thereby preventing the shower head body 110 from deforming in a high temperature environment. Optionally, a seal 213 is provided between the support rod 122 and the top cover 210 to ensure the sealing of the gas distribution chamber 211, thereby preventing the process gas from escaping from the connection between the support rod 122 and the top cover 210, but the present invention is not limited to this.

[0065] In summary, this embodiment provides a gas spray device and semiconductor processing equipment. In the support assembly, a support plate is fixed within the first recess of the showerhead body. The support rod lifts the showerhead body via the support plate, effectively increasing the strength and stability of the connection between the support assembly and the showerhead body. Furthermore, the support plate cooperates with the second recess of the showerhead body to form a gas-containing chamber. The support plate is provided with a first through-hole that communicates with the gas-containing chamber, so that the support plate does not hinder the flow of process gas to the second nozzle holes. This allows both the first and second nozzle holes on the showerhead body to be fully operational, thereby improving the stability of the connection between the support assembly and the showerhead body while ensuring uniformity in the flow of process gas. In this embodiment, the support plate is provided with at least two second through-holes. The bottom surface of the first recess is provided with connection holes corresponding to the second through-holes. The support plate is fixed to the showerhead body via the corresponding second through-holes and connection holes, thereby ensuring the stability of the connection between the support plate and the showerhead body, and thus the stability of the connection between the support assembly and the showerhead body. The end surface of the support plate facing away from the gas containment chamber is flush with the upper surface of the showerhead body to prevent the support plate from affecting the flow direction of the process gas on the upper surface of the showerhead body, thereby ensuring uniform process gas introduction. Furthermore, in this embodiment, the top surface of the connector connecting the connection hole and the second through hole is no higher than the upper surface of the showerhead body, thereby preventing the top of the connector from affecting the flow direction of the process gas on the upper surface of the showerhead body. Furthermore, the connector does not extend into the gas containment chamber to prevent the bottom of the connector from affecting the flow direction of the process gas in the gas containment chamber, further ensuring uniform process gas introduction.

[0066] Although the present invention has been described in detail through the above preferred embodiments, it should be understood that the above description should not be considered as limiting the present invention. After reading the above description, various modifications and alternatives to the present invention will be readily apparent to those skilled in the art. Therefore, the scope of protection of the present invention shall be defined by the appended claims.

Claims

1. A gas spraying device, characterized in that: include: A shower head body comprising an upper surface and a lower surface opposite to each other; a first recessed portion is formed on the upper surface of the shower head body, and a second recessed portion is formed on the bottom surface of the first recessed portion; The shower head body is further provided with a first spray hole and a second spray hole. The first spray hole extends from the upper surface of the shower head body to the lower surface of the shower head body, and the second spray hole extends from the bottom surface of the second recessed portion to the lower surface of the shower head body. The first spray hole and the second spray hole are evenly distributed on the lower surface of the shower head body. A support assembly is fixedly connected to the shower head body; the support assembly includes: a support plate fixed in the first recessed portion; a support rod fixedly connected to the support plate and used to lift the shower head body; and the support plate and the second recessed portion cooperate to form a gas containing cavity, and a first through hole connected to the gas containing cavity is provided on the support plate.

2. The gas spraying device according to claim 1, characterized in that: The gas accommodating chamber includes a first sub-accommodating chamber and a second sub-accommodating chamber connected vertically. The first sub-accommodating chamber is close to the first recessed portion, and a cross-sectional area of ​​the first sub-accommodating chamber is smaller than a cross-sectional area of ​​the second sub-accommodating chamber.

3. The gas spraying device according to claim 2, characterized in that: The longitudinal section of the first sub-accommodating cavity is rectangular, and the longitudinal section of the second sub-accommodating cavity is an isosceles trapezoid or a rectangle.

4. The gas spraying device according to claim 1, wherein: The longitudinal section of the gas accommodating chamber is an isosceles trapezoid.

5. The gas spraying device according to claim 1, wherein: An end surface of the support plate away from the gas accommodating cavity is flush with an upper surface of the shower head body.

6. The gas spraying device according to claim 1, wherein: The cross-sectional shape of the support plate matches the cross-sectional shape of the first recessed portion.

7. The gas spraying device according to claim 1, wherein: The support plate is further provided with at least two second through holes, and the bottom surface of the first recessed portion is provided with connecting holes corresponding to the second through holes, and the support assembly is fixedly connected to the shower head body through the corresponding second through holes and the connecting holes.

8. The gas spraying device according to claim 7, characterized in that: The connecting hole is a threaded hole, and the second through hole is a smooth hole or a threaded hole.

9. The gas spraying device according to claim 7, characterized in that: The second through hole is a countersunk hole, and the top surface of the connecting piece used to connect the connecting hole and the second through hole is not higher than the upper surface of the shower head body.

10. The gas spraying device according to claim 9, characterized in that: The connecting piece does not extend into the gas containing chamber.

11. The gas spraying device according to claim 6, characterized in that: A portion of the first nozzle hole is provided at the edge of the support plate, and another portion of the first nozzle hole is provided at the edge of the first recessed portion; and after the support plate is fixed to the first recessed portion, the portion of the first nozzle hole and the other portion of the first nozzle hole are combined into the first nozzle hole.

12. The gas spraying device according to claim 1, wherein: An area of ​​a bottom surface of the second recessed portion is not greater than an area of ​​a bottom surface of the first recessed portion.

13. The gas spraying device according to claim 7, wherein: The orthographic projection of the connecting hole on the surface where the bottom surface of the second recessed portion is located falls into the bottom surface of the second recessed portion.

14. The gas spraying device according to claim 1, wherein: The first through hole and the second spray hole are arranged opposite to each other.

15. The gas spraying device according to claim 1, wherein: The support rod and the support plate are integrated.

16. A semiconductor processing device, characterized in that: include: reaction chamber; a top cover, arranged on the top of the reaction chamber; A base is provided at the bottom of the reaction chamber and is used to support the substrate; The gas spray device according to any one of claims 1 to 15 is located between the top cover and the base; the edge of the shower head body is fixedly connected to the top cover or the side wall of the reaction chamber, and the support rod is fixedly connected to the top cover.

17. The semiconductor processing equipment according to claim 16, wherein A gas passage is provided in the top cover; A gas distribution cavity communicating with the gas channel is formed between the upper surface of the shower head body and the top cover; A reaction area is formed between the lower surface of the shower head body and the base; and process gas flows into the reaction area through the gas channel, the gas distribution cavity, and the first and second nozzle holes in the shower head body to process the substrate.

18. The semiconductor processing equipment according to claim 16, wherein A sealing member is provided between the support rod and the top cover.

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