Pipeline connecting piece and process equipment of semiconductor device

Abstract

The utility model discloses a pipeline connecting piece and process equipment of a semiconductor device. The pipeline connecting piece comprises a transmission pipeline, a gas inlet end of which is connected with a plasma source and a gas outlet end of which is connected with a reaction cavity, so as to transmit plasma in the plasma source to the reaction cavity; and the temperature adjusting water channel is arranged on the periphery of the transmission pipeline and is used for cooling the pipeline connecting piece when the plasma is transmitted in the transmission pipeline and preheating the pipeline connecting piece when the reaction cavity is in a vacant state. By means of the pipeline connecting piece, when a large amount of heat is released in the plasma transmission process, the pipeline connecting piece can be cooled in time, so that the defect that harmful particles generated by the reaction of high-temperature plasma and metal on the surface of the connecting piece enter a reaction cavity to cause deposition and film formation is avoided, in addition, the temperature rising time of a machine can be shortened, and the production efficiency is improved. Therefore, the production cycle is shortened and the equipment yield is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor process equipment, in particular to a pipeline connector and process equipment for semiconductor devices. Background Art

[0002] A remote plasma system (RPS) is a device used to generate plasma, typically used in vacuum environments for processes such as surface treatment, material modification, and thin film deposition. In thin film deposition equipment, a remote plasma source can be connected to the equipment's reaction chamber to perform regular molecular-level cleaning inside the chamber, preventing contamination that could affect film performance.

[0003] At present, the remote plasma system can transport plasma to the reaction chamber through the pipe connector to clean the reaction chamber. However, during the chamber cleaning process, since the remote plasma system needs to excite the gas through high-power radio frequency to generate plasma, the transmitted plasma has the heat provided by the high-power radio frequency, which will increase the heat input at the position of the pipe connector. Moreover, not only is the plasma itself a high-temperature ionized gas and is in a high-temperature state, but the gas will react at the position of the pipe connector, releasing a large amount of heat, which will cause the temperature at this position to rise sharply. After the temperature rises, the activity of the plasma will also increase, which will cause the metal on the surface of the pipe connector to react more easily with the plasma, thereby easily generating some harmful particles that can be detached on the surface inside the connector. In addition, in the prior art, after completing one process preparation, when performing the next process preparation, it is necessary to first heat the various components in the machine to the process temperature, which requires a certain amount of process time, thereby lengthening the production cycle and reducing equipment output.

[0004] In order to solve the above-mentioned problems existing in the prior art, there is an urgent need in the art for an improved pipe connector that can cool down the pipe connector in a timely manner when a large amount of heat is released during the transmission of plasma, thereby preventing harmful particles generated by the reaction between high-temperature plasma and the metal on the surface of the connector from entering the reaction chamber and causing defects in deposition and film formation. In addition, it can also shorten the heating time of the machine, thereby shortening the production cycle and improving equipment output. Utility Model Content

[0005] The following is a brief summary of one or more aspects to provide a basic understanding of these aspects. This summary is not an exhaustive overview of all conceivable aspects and is neither intended to identify key or critical elements of all aspects nor to define the scope of any or all aspects. Its sole purpose is to present some concepts of one or more aspects in a simplified form as a prelude to the more detailed description that will be provided later.

[0006] In order to overcome the above-mentioned defects of the prior art, the present invention provides a pipe connector and a process equipment for a semiconductor device, which can timely cool down the pipe connector when a large amount of heat is released during the transmission of plasma, thereby preventing harmful particles generated by the reaction between high-temperature plasma and the metal on the surface of the connector from entering the reaction chamber and causing deposition film defects. In addition, it can also shorten the heating time of the machine, thereby shortening the production cycle and improving equipment output.

[0007] Specifically, the pipe connector provided according to the first aspect of the present invention includes: a transmission pipeline, the air inlet end of which is connected to a plasma source, and the air outlet end of which is connected to a reaction chamber, so as to transmit the plasma in the plasma source to the reaction chamber; and a temperature regulating water channel, which is arranged on the periphery of the transmission pipeline and is used to cool the pipe connector when the plasma is transmitted in the transmission pipeline, and to preheat the pipe connector when the reaction chamber is in an idle state.

[0008] Furthermore, in some embodiments of the present invention, the pipe connector also includes: a heat pipe, a first section of which is connected to the transmission pipeline, and a second section of which is connected to the temperature-regulating water channel, for transferring heat between the transmission pipeline and the temperature-regulating water channel.

[0009] Furthermore, in some embodiments of the present invention, when the plasma is transmitted in the transmission pipeline, a coolant is introduced into the temperature-regulating water channel, the first section of the heat pipe is an evaporation section, and the second section of the heat pipe is a condensation section, so as to transfer the heat in the transmission pipeline to the temperature-regulating water channel.

[0010] Furthermore, in some embodiments of the present invention, when the reaction chamber is in an empty state, insulation liquid is introduced into the temperature-regulating water channel, the first section of the heat pipe is a condensation section, and the second section of the heat pipe is an evaporation section, so as to transfer the heat in the temperature-regulating water channel to the transmission pipeline.

[0011] Furthermore, in some embodiments of the present invention, the first section of the heat pipe is closely attached to the transmission pipeline, and the second section of the heat pipe is immersed in the temperature-regulating water channel.

[0012] Furthermore, in some embodiments of the present invention, the temperature-regulating water channel includes a plurality of bends, and the temperature-regulating water channel is distributed at least in bends on both sides of the transmission pipeline.

[0013] Furthermore, in some embodiments of the present invention, the bottom of the inner wall of the pipe at the gas outlet end of the transmission pipeline includes a plurality of air holes for introducing protective gas to form an air cushion at the bottom of the inner wall of the pipe to isolate the plasma from the inner wall of the pipe when transmitting the plasma.

[0014] In addition, the process equipment for the above-mentioned semiconductor device provided according to the second aspect of the present invention includes: a reaction chamber for performing a thin film deposition process; a plasma source for generating plasma; and the above-mentioned pipe connector provided by the first aspect of the present invention, the air inlet end being connected to the plasma source, and the air outlet end being connected to the reaction chamber, for transmitting the plasma to the reaction chamber after completing the thin film deposition process in the reaction chamber, and performing chamber cleaning on the reaction chamber.

[0015] Furthermore, in some embodiments of the present invention, the process equipment also includes: a conversion valve, whose water inlet end is respectively connected to a cold water source for providing a coolant and a hot water source for providing an insulating liquid, and whose water outlet end is connected to the water inlet of the temperature-regulating water channel, for switching the conversion valve to the cold water source when the thin film deposition process is completed in the reaction chamber, and passing coolant into the temperature-regulating water channel to cool the pipe connector, and when the process equipment is in an idle state, switching the conversion valve to the hot water source, and passing insulating liquid into the temperature-regulating water channel to preheat the pipe connector. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] The above features and advantages of the present invention can be better understood after reading the detailed description of the embodiments of the present disclosure in conjunction with the following drawings. In the drawings, the components are not necessarily drawn to scale, and components with similar related properties or characteristics may have the same or similar reference numerals.

[0017] Figure 1 A schematic structural diagram of a semiconductor device process equipment provided according to some embodiments of the present utility model is shown;

[0018] Figure 2 A schematic structural diagram of a pipe connector provided according to some embodiments of the present utility model is shown;

[0019] Figure 3 for Figure 2 The front structural diagram of the pipe connector shown;

[0020] Figure 4 A side cross-sectional view of a pipe connector provided according to some embodiments of the present invention beside its transmission pipeline is shown;

[0021] Figure 5 Shows a connection diagram of a conversion valve provided according to some embodiments of the present utility model;

[0022] Figure 6 A side cross-sectional view showing a midline position of a pipe connector provided according to other embodiments of the present invention; and

[0023] Figure 7 A flow chart of a method for cleaning process equipment of a semiconductor device provided according to some embodiments of the present invention is shown.

[0024] Reference numerals:

[0025] 100 Process equipment for semiconductor devices;

[0026] 110 plasma source;

[0027] 120 reaction chamber;

[0028] 200 pipe connectors;

[0029] 210 intake end;

[0030] 220 outlet end;

[0031] 230 transmission pipeline;

[0032] 240 Tempering water channel;

[0033] 250 heat pipes;

[0034] 251 The first section of the heat pipe;

[0035] 252 The second section of the heat pipe;

[0036] 300 switching valve;

[0037] 310 Coolant;

[0038] 320 Insulation fluid;

[0039] 610 Pipeline inner wall;

[0040] 620 pores;

[0041] 621 air intake passage;

[0042] 630 plasma transport path;

[0043] 640 shielding gas flow path; and

[0044] Steps S710~S720. DETAILED DESCRIPTION

[0045] The following specific embodiments illustrate the implementation of the present invention. Those skilled in the art can easily understand other advantages and functions of the present invention from the contents disclosed in this specification. Although the description of the present invention will be introduced in conjunction with the preferred embodiment, this does not mean that the features of this utility model are limited to this implementation. On the contrary, the purpose of introducing the utility model in conjunction with the implementation is to cover other options or modifications that may be extended based on the claims of the present invention. In order to provide an in-depth understanding of the present invention, the following description will contain many specific details. The present invention can also be implemented without using these details. In addition, in order to avoid confusion or blurring the focus of the present invention, some specific details will be omitted in the description.

[0046] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0047] Furthermore, the terms "upper," "lower," "left," "right," "top," "bottom," "horizontal," and "vertical" used in the following description should be understood to refer to the orientations depicted in that section and the accompanying drawings. These relative terms are used solely for convenience of description and do not necessarily imply that the devices described herein must be manufactured or operated in a specific orientation. Therefore, they should not be construed as limiting the present invention.

[0048] It is understood that although the terms "first," "second," "third," etc. may be used herein to describe various components, regions, layers, and / or portions, these components, regions, layers, and / or portions should not be limited by these terms, and these terms are merely used to distinguish different components, regions, layers, and / or portions. Thus, a first component, region, layer, and / or portion discussed below may be referred to as a second component, region, layer, and / or portion without departing from some embodiments of the present invention.

[0049] As mentioned above, during the chamber cleaning process, since a remote plasma system is required to excite the gas and generate plasma through high-power radio frequency, the transmitted plasma has the heat provided by the high-power radio frequency, which increases the heat input at the location of the pipe connector. Moreover, not only is the plasma itself a high-temperature ionized gas and is in a high-temperature state, but the gas will react at the location of the pipe connector, releasing a large amount of heat, which will cause the temperature at this location to rise sharply. After the temperature rises, the activity of the plasma will also increase, which will cause the metal on the surface of the pipe connector to react more easily with the plasma, thereby easily generating some harmful particles (particles) that can be detached on the surface inside the connector. In addition, in the prior art, after completing one process preparation, when performing the next process preparation, it is necessary to first heat the various components in the machine to the process temperature, which requires a certain amount of process time, thereby lengthening the production cycle and reducing equipment output.

[0050] In order to solve the above-mentioned problems existing in the prior art, the present invention provides a pipe connector and a process equipment for semiconductor devices, which can timely cool down the pipe connector when a large amount of heat is released during the transmission of plasma, thereby preventing harmful particles generated by the reaction between high-temperature plasma and the metal on the surface of the connector from entering the reaction chamber and causing defects in deposition and film formation. In addition, it can also shorten the heating time of the machine, thereby shortening the production cycle and improving equipment output.

[0051] In some non-limiting embodiments, the pipe connector provided in the first aspect of the present invention may be configured in the process equipment of the semiconductor device provided in the second aspect of the present invention.

[0052] The following describes the operating principles of the aforementioned pipe connector in conjunction with examples of semiconductor device process equipment. Those skilled in the art will understand that these examples of semiconductor device process equipment are merely non-limiting implementations of the present invention, intended to clearly demonstrate the main concepts of the present invention and provide specific solutions that facilitate implementation by the public. They are not intended to limit the full operating methods or functions of the pipe connector. Similarly, the pipe connector is merely a non-limiting implementation of the present invention and does not constitute a limitation on the configuration objects in these semiconductor device process equipment.

[0053] Please see Figure 1 , Figure 1 A schematic structural diagram of a semiconductor process equipment provided according to some embodiments of the present utility model is shown.

[0054] like Figure 1As shown, in some embodiments of the present invention, the process equipment 100 of the semiconductor device may include a plasma source 110, a reaction chamber 120, and a pipe connector 200. Wafers can be fed into the reaction chamber 120 and subjected to a thin film deposition process. The plasma source 110 can be used to generate plasma to perform chamber cleaning on the reaction chamber 120 after the deposition process is completed. Preferably, in order not to increase the floor space of the process equipment, a remote plasma system (RPS) can be used as the plasma source 110. The gas inlet end 210 of the pipe connector 200 can be connected to the plasma source 110, and the gas outlet end 220 thereof can be connected to the reaction chamber 120, for transmitting the plasma to the reaction chamber 120 after the thin film deposition process is completed in the reaction chamber 120, so as to perform chamber cleaning on the reaction chamber 120.

[0055] Specifically, the plasma source 110 can dissociate nitrogen fluoride (NF3) gas to produce plasma, wherein the plasma can include a large number of fluoride ions. After the thin film deposition process is completed and the wafer is sent out of the reaction chamber 120, a cleaning process can be run in the reaction chamber 120 to clean off the thin film deposited on the inner side of the chamber dome, the surface of the wafer tray, and the inner wall of the chamber. The plasma in the plasma source 110 is transmitted to the reaction chamber 120 through a pipe and a pipe connector 200. These high-energy fluoride ions in the plasma can react with residual silicon dioxide, silicon nitride and other deposits in the reaction chamber 120 to form volatile silicon fluoride, thereby being able to remove the residual accumulation of silicon dioxide and silicon nitride films on the internal surface of the reaction chamber 120 and other parts during the chamber cleaning process, thereby achieving the effect of chamber cleaning.

[0056] In addition, before the plasma enters the pipe connector 200, its inlet pressure, temperature, and flow rate ratio can be adjusted to ensure the activity of the plasma. Optionally, the plasma inlet pressure can be adjusted by a precision pressure reducing valve, the plasma flow rate can be adjusted by a mass flow controller (MFC), and the temperature of the heating belt can be used to close the loop to control the plasma temperature.

[0057] Continue as Figure 1 As shown, the semiconductor device process equipment 100 may further include multiple reaction chambers 120, for example, two reaction chambers 120. The gas outlet end of the pipe connector 200 may also include multiple gas outlet ends 220, which are respectively connected to each reaction chamber 120 to transmit plasma to the corresponding reaction chamber 120, thereby increasing the production capacity of the equipment.

[0058] Next, please refer to Figure 2 and Figure 3 , Figure 2A schematic structural diagram of a pipe connector provided according to some embodiments of the present utility model is shown. Figure 3 for Figure 2 The front structural diagram of the pipe connector is shown.

[0059] like Figure 2 As shown, the pipe connector 200 may include a transfer pipe 230 and a temperature-regulating water channel 240. The gas inlet end 210 of the transfer pipe 230 is connected to the plasma source 110, and the gas outlet end 220 is connected to the reaction chamber 120, so as to transfer the plasma in the plasma source 110 to the reaction chamber 120. The temperature-regulating water channel 240 may be provided on the periphery of the transfer pipe 230 to cool the pipe connector 200 when the plasma is transferred in the transfer pipe 230, and to preheat the pipe connector 200 when the reaction chamber 120 is in an idle state.

[0060] Specifically, if Figure 2 and Figure 3 As shown, the pipe connector 200 may also include a heat pipe 250. The first section 251 of the heat pipe can be connected to the transmission pipeline 230, and the second section 252 of the heat pipe can be connected to the temperature-controlled water channel 240, for transferring heat between the transmission pipeline 230 and the temperature-controlled water channel 240. Because the heat pipe 250 is a highly efficient heat transfer device with an ultra-fast thermal conductivity coefficient, its thermal conductivity rate is higher than that of ordinary metals. The heat pipe 250 is a closed tube that does not require heating. It contains a thermal conductor inside. The heat transfer rate between the transmission pipeline 230 and the temperature-controlled water channel 240 is accelerated by vaporization and liquefaction.

[0061] Furthermore, if Figure 3 As shown, preferably, the first section 251 of the heat pipe can be close to the transmission pipeline 230, and the second section 252 of the heat pipe can be immersed in the temperature-regulating water channel 240, thereby accelerating the heat transfer between the transmission pipeline 230 and the temperature-regulating water channel 240.

[0062] When the plasma is output from the plasma source 110 and passes through the pipe connector 200, not only is the plasma itself a high-temperature ionized gas in a high-temperature state, but the heat released by the gas during the internal reaction will cause the temperature of the pipe connector 200 to rise sharply. Then, due to the corrosion of the transmitted plasma, many harmful particles, such as fluoride, will be generated on the surface of the pipe connector 200. These particles will enter the reaction chamber 120 with the air flow and cause defects in the deposition film. In order to avoid the harmful particles, such as fluoride, generated by the rapid temperature rise of the pipe connector 200 during the transmission of plasma, Figure 3As shown, in some embodiments of the present invention, when plasma is being transported within the transmission pipeline 230, a coolant, such as cold water, is passed into the temperature-regulating water channel 240. In this case, the first section 251 of the heat pipe can function as an evaporation section, and the second section 252 of the heat pipe can function as a condensation section, rapidly transferring heat from the high-temperature plasma within the transmission pipeline 230 to the temperature-regulating water channel 240, thereby promptly cooling the pipe connector 200.

[0063] Preferably, the temperature of the coolant introduced is not necessarily as low as possible, but needs to reach a process balance point, that is, the temperature of the coolant introduced needs to be able to ensure the activity of the plasma while not generating harmful particles.

[0064] Further, see Figure 4 , Figure 4 FIG2 shows a side cross-sectional view of a pipe connector provided by other embodiments of the present invention beside its transmission pipeline. Figure 4 As shown, the temperature-regulating water channel 240 may further include multiple bends, so that it is distributed in a bend at least on both sides of the transmission pipeline 230. By providing multiple bends in the temperature-regulating water channel 240, the contact area between the temperature-regulating water channel 240 and the interior of the pipe connector 200 can be increased within a limited space, thereby increasing the heat dissipation efficiency and extending the cooling time of the coolant circulation, which is beneficial to improving the cooling effect on the pipe connector 200, quickly removing heat, and reducing temperature fluctuations of the pipe connector 200.

[0065] On this basis, we can combine Figure 2 and Figure 3 Optionally, the pipe connector 200 may include multiple rows of heat pipes 250 arranged in parallel, and the two ends of the heat pipe 250 serve as the second section 252 of the heat pipe, i.e., the condensation section, and the middle part of the heat pipe 250 serves as the first section 251 of the heat pipe, i.e., the evaporation section, thereby further accelerating the heat conduction rate of the transmission pipeline 230 in the pipe connector 200, so as to quickly cool the pipe connector 200 and avoid drastic temperature fluctuations.

[0066] In other embodiments of the present invention, when the reaction chamber 120 in the process equipment 100 of the semiconductor device has completed the previous process preparation and is in an idle state, an insulation liquid, such as hot water, can be introduced into the temperature-controlled water channel 240. The first section 251 of the heat pipe can be used as a condensation section, and the second section 252 of the heat pipe can be used as an evaporation section to transfer the heat of the insulation liquid in the temperature-controlled water channel 240 to the transmission pipeline 230, thereby preheating the pipe connector 200. In this way, when the next process preparation is carried out, the heating time of each component of the machine can be greatly reduced, thereby shortening the production cycle and helping to increase equipment output.

[0067] Specifically, in order to realize the requirement of switching the cooling liquid and the insulation liquid into the pipe connector 200, please refer to Figure 5 , Figure 5 A connection diagram of a conversion valve provided according to some embodiments of the present utility model is shown.

[0068] like Figure 5 As shown, in some optional embodiments, the semiconductor device processing equipment 100 may further include a switching valve 300. The water inlet of the switching valve 300 is connected to a cold water source and a hot water source, respectively. The cold water source stores a coolant 310, and the hot water source stores an insulating liquid 320. The coolant 310 and the insulating liquid 320 are respectively transported to the water inlet of the switching valve 300 via two independent pipelines. The water outlet of the switching valve 300 can be connected to the water inlet of the temperature-regulating water channel 240 to introduce coolant or insulating liquid into the pipe connector 200 according to specific process requirements.

[0069] In other embodiments, the cold water source and the hot water source can be replaced with circulating water of a specific temperature. That is, when a cooling liquid is required, the circulating water temperature can be set to a cold water temperature suitable for cooling the equipment, and when a heat preservation liquid is required, the circulating water temperature can be set to a hot water temperature suitable for heat preservation of the equipment.

[0070] Furthermore, if Figure 5 As shown, a conversion valve 300 can be set on both sides of the pipe connector 200 so that the coolant and the insulation liquid can be distributed on both sides of the pipe connector 200 to achieve uniform temperature reduction or temperature increase on the left and right sides.

[0071] Furthermore, since a large number of high-speed charged particles gather inside the transmitted plasma, they directly impact the inner wall of the pipe during the transmission process, which will cause damage to the inner wall of the pipe and directly affect the service life of the pipe connector. Therefore, please refer to Figure 6 , Figure 6 A side cross-sectional view of a pipe connector provided according to some other embodiments of the present invention at its midline position is shown.

[0072] like Figure 6 As shown, in other embodiments of the present invention, the bottom of the pipe inner wall 610 at the gas outlet end of the transmission pipeline 230 of the pipe connector 200 may further include a plurality of air holes 620 for introducing protective gas to form an air cushion at the bottom of the pipe inner wall 610 to isolate the plasma from the pipe inner wall 610 during transmission. Furthermore, the bottom of the pipe inner wall 610 may further include an air inlet channel 621. The air inlet channel 621 may connect the air holes 620, and protective gas may be introduced into the air holes 620 through the air inlet channel 621. The transmission path 630 of the plasma in the pipe connector 200 may be as shown in FIG. Figure 6As shown by the dotted arrows in FIG. 6 , the flow path 640 of the protective gas can be as follows Figure 6 Optionally, the protective gas may include but is not limited to nitrogen, argon, helium, etc.

[0073] Preferably, multiple air holes 620 can be evenly distributed at the bottom of the inner wall 610 of the pipe. For example, the bottom of the inner wall 610 of the pipe can be provided with multiple air holes 620, which are used to form an air cushion with uniform air density at the bottom of the inner wall 610 of the pipe after the protective gas is introduced, thereby avoiding the situation where the local air density of the air cushion is low, resulting in direct contact between the inner wall 610 of the pipe and the plasma during the plasma transmission process, and being impacted and corroded by the plasma.

[0074] Furthermore, in some embodiments, the semiconductor device process equipment 100 may further include a controller (not shown in the drawings), and the controller may be used to implement various steps in the cleaning method of the semiconductor device process equipment.

[0075] Next, see Figure 7 , Figure 7 A flow chart of a method for cleaning process equipment of a semiconductor device provided according to some embodiments of the present invention is shown.

[0076] like Figure 7 As shown, in some embodiments of the present invention, a method for cleaning process equipment for semiconductor devices may include the following steps S710: in response to the completion of a thin film deposition process in the reaction chamber 120 in the process equipment 100 for the semiconductor device, a coolant is introduced into the temperature regulating water channel in the pipe connector 200 to cool the pipe connector 200.

[0077] Specifically, it can be combined Figure 5 It is understood that upon completion of the thin film deposition process within the reaction chamber 120, the switching valve 300 can be switched to the cold water source to allow a coolant, such as cold water, to be introduced into the temperature-controlled water channel. In this case, the first section 251 of the heat pipe can function as an evaporation section, and the second section 252 of the heat pipe can function as a condensation section, rapidly transferring heat from the high-temperature plasma within the transmission line 230 to the temperature-controlled water channel 240, thereby promptly cooling the pipe connector 200.

[0078] Thereafter, step S720 may be performed. In response to the pipe connector 200 being in a cooling state, the plasma in the plasma source 110 is transferred to the reaction chamber 120 through the pipe connector 200 to clean the reaction chamber 120 .

[0079] Because coolant is constantly flowing through the temperature-controlled water channel 240 within the pipe connector 200, and the condenser section of the heat pipe 250 is immersed in the temperature-controlled water channel 240, the heat of the high-temperature plasma can be quickly transferred to the temperature-controlled water channel 240 containing the coolant during the process of entering the pipe connector 200 and transmitting. This allows the pipe connector 200 to be cooled promptly, smoothing out the temperature peaks during the chamber cleaning process of the reaction chamber 120, and maintaining the temperature of the pipe connector 200 between 70° and 120°. This prevents a rapid temperature increase that could lead to the formation of harmful particles on the surface of the pipe connector 200, thereby affecting the quality of subsequent thin film deposition. In addition, if the temperature of the pipe connector 200 increases, the transmission speed of the plasma will also increase, which will further cause the plasma to bombard the inner wall of the pipe connector 200, resulting in an increase in harmful particles.

[0080] Further, combined with Figure 6 As shown, in some preferred embodiments, the bottom of the pipe inner wall 610 at the gas outlet end of the transmission pipeline 230 of the pipe connector 200 may further include a plurality of air holes 620. The controller may be further configured to: in response to the completion of the thin film deposition process in the reaction chamber 120, a protective gas may be introduced into the plurality of air holes 620 at the bottom of the pipe inner wall 610 at the gas outlet end, so that the protective gas forms an air cushion at the bottom of the pipe inner wall 610. Therefore, in step S720, during the process of transmitting the plasma in the plasma source 110 to the reaction chamber 120 via the pipe connector 200, the plasma may be isolated from the pipe inner wall 610 via the air cushion, thereby avoiding direct impact of the plasma on the pipe inner wall 610 during transmission, thereby protecting the pipe inner wall 610 and extending the service life of the pipe connector 200.

[0081] Optionally, when the reaction chamber 120 in the semiconductor device process equipment 100 completes the previous process preparation and is in an idle state, the controller can also switch the switching valve 300 to the hot water source to introduce a heat preservation liquid, such as hot water, into the temperature-controlled water channel 240. The first section 251 of the heat pipe can be used as a condensation section, and the second section 252 of the heat pipe can be used as an evaporation section to transfer the heat of the heat preservation liquid in the temperature-controlled water channel 240 to the transmission pipeline 230, thereby preheating the pipe connector 200. In this way, when the next process preparation is carried out, the heating time of each component of the machine can be greatly reduced, thereby shortening the production cycle and helping to increase equipment output.

[0082] Although the above methods are illustrated and described as a series of acts for simplicity of explanation, it is to be understood and appreciated that these methods are not limited by the order of the acts, as some acts may occur in a different order and / or concurrently with other acts from those illustrated and described herein or not illustrated and described herein but understandable to those skilled in the art according to one or more embodiments.

[0083] In summary, the present invention provides a pipe connector and a process equipment for semiconductor devices, which can timely cool down the pipe connector when a large amount of heat is released during the transmission of plasma, thereby preventing harmful particles generated by the reaction between high-temperature plasma and the metal on the surface of the connector from entering the reaction chamber and causing defects in deposition and film formation. In addition, it can also shorten the heating time of the machine, thereby shortening the production cycle and improving equipment output.

[0084] The previous description of the disclosure is provided to enable any person skilled in the art to make or use the disclosure. Various modifications to the disclosure will be apparent to those skilled in the art, and the general principles defined herein may be applied to other variations without departing from the spirit or scope of the disclosure. Thus, the disclosure is not intended to be limited to the examples and designs described herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims

1. A pipe connector, characterized in that: include: a transmission pipeline, the gas inlet end of which is connected to the plasma source, and the gas outlet end of which is connected to the reaction chamber, so as to transmit the plasma in the plasma source to the reaction chamber; as well as The temperature regulating water channel is provided on the periphery of the transmission pipeline, and is used to cool the pipeline connector when the plasma is transmitted in the transmission pipeline, and to preheat the pipeline connector when the reaction chamber is in an empty state.

2. The pipe connector according to claim 1, wherein: Also includes: A heat pipe, the first section of which is connected to the transmission pipeline and the second section of which is connected to the temperature-regulating water channel, is used to transfer heat between the transmission pipeline and the temperature-regulating water channel.

3. The pipe connector according to claim 2, wherein: When the plasma is transmitted in the transmission pipeline, coolant is introduced into the temperature-regulating water channel. The first section of the heat pipe is an evaporation section, and the second section of the heat pipe is a condensation section, so as to transfer the heat in the transmission pipeline to the temperature-regulating water channel.

4. The pipe connector according to claim 2, wherein: When the reaction chamber is in an empty state, insulation liquid is introduced into the temperature-regulating water channel, the first section of the heat pipe is a condensing section, and the second section of the heat pipe is an evaporating section, so as to transfer the heat in the temperature-regulating water channel to the transmission pipeline.

5. The pipe connector according to claim 2, wherein: The first section of the heat pipe is closely attached to the transmission pipeline, and the second section of the heat pipe is immersed in the temperature-regulating water channel.

6. The pipe connector according to claim 1, wherein: The temperature-regulating water channel includes a plurality of bends, and the temperature-regulating water channel is distributed at least in bends on both sides of the transmission pipeline.

7. The pipe connector according to claim 1, wherein: The bottom of the inner wall of the pipe at the gas outlet end of the transmission pipeline includes multiple air holes for introducing protective gas to form an air cushion at the bottom of the inner wall of the pipe to isolate the plasma from the inner wall of the pipe when transmitting the plasma.

8. A process equipment for a semiconductor device, characterized in that: include: a reaction chamber for performing a thin film deposition process; a plasma source for generating plasma; as well as The pipe connector according to any one of claims 1 to 7, wherein the air inlet end is connected to the plasma source and the air outlet end is connected to the reaction chamber, and is used to transmit the plasma to the reaction chamber after completing the thin film deposition process in the reaction chamber to perform chamber cleaning on the reaction chamber.

9. The process equipment according to claim 8, characterized in that Also includes: A conversion valve, whose water inlet end is respectively connected to a cold water source for providing a coolant and a hot water source for providing an insulation liquid, and whose water outlet end is connected to the water inlet of the temperature-regulating water channel. When the thin film deposition process is completed in the reaction chamber, the conversion valve is switched to the cold water source, and coolant is passed into the temperature-regulating water channel to cool the pipe connector; when the process equipment is in an idle state, the conversion valve is switched to the hot water source, and insulation liquid is passed into the temperature-regulating water channel to preheat the pipe connector.

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