Intelligent power module

Abstract

The utility model provides an intelligent power module. The intelligent power module comprises a packaging body; the first lead frame is arranged in the packaging body; a plurality of power chips arranged according to a predetermined electrical connection relationship, wherein the power chips are arranged on the first lead frame; the plurality of pins are arranged on the side edge of the packaging body; the heat dissipation substrate is arranged on the heat dissipation surface of the packaging body opposite to the first lead frame; wherein the distance between the first lead frame and the heat dissipation surface of the packaging body is a first distance, the distance between the pins and the heat dissipation surface of the packaging body is a second distance, and the first distance is smaller than the second distance. The distance between the first lead frame and the heat dissipation surface is reduced, so that the power chip arranged on the first lead frame can be closer to the heat dissipation surface of the packaging body, heat dissipation of the power chip can be faster, meanwhile, the heat dissipation substrate is arranged relative to the first lead frame, heat dissipation of the power chip is further accelerated, and the heat dissipation efficiency of the power chip is improved. Therefore, the heat dissipation capability of the intelligent power module is improved, and the intelligent power module is prevented from overheating.

Description

Technical Field

[0001] The utility model relates to the technical field of electronic devices, in particular to an intelligent power module. Background Art

[0002] The Intelligent Power Module (IPM) is an advanced power switching device that is gaining increasing application in the field of power electronics. Based on traditional power modules, the IPM integrates logic, control, detection, and protection circuits. It features high integration and system reliability, simplifies peripheral application circuits, and is easy to use.

[0003] When the intelligent power module is in use, the internal chip will generate heat. If the heat dissipation of the intelligent power module is poor, it will cause the intelligent power module to overheat, affecting the performance of the intelligent power module. Utility Model Content

[0004] The main purpose of the utility model is to provide an intelligent power module, aiming to solve the problem of how to improve the heat dissipation capability of the intelligent power module in the prior art.

[0005] To achieve the above objectives, the present invention provides an intelligent power module, comprising:

[0006] Encapsulation;

[0007] A first lead frame is disposed inside the package body;

[0008] a plurality of power chips arranged in a predetermined electrical connection relationship, wherein the power chips are arranged on the first lead frame;

[0009] A plurality of pins are arranged on the side of the package body;

[0010] a heat dissipation substrate, disposed on a heat dissipation surface of the package body opposite to the first lead frame;

[0011] in:

[0012] The distance between the first lead frame and the heat dissipation surface of the package body is a first distance, the distance between the lead and the heat dissipation surface of the package body is a second distance, and the first distance is smaller than the second distance.

[0013] Optionally, the heat dissipation substrate is a ceramic substrate, and the ceramic substrate is soldered on the base island of the first lead frame by means of tin solder.

[0014] Optionally, the heat dissipation substrate is a ceramic substrate, a heat-conducting metal layer is provided on a side of the ceramic substrate close to the first lead frame, and the heat-conducting metal layer is soldered to the base island of the first lead frame by tin solder.

[0015] Optionally, the thermally conductive metal layer is consistent with a projection of the first lead frame on the ceramic substrate.

[0016] Optionally, the outer surface of the heat-conducting metal layer is plated with a welding metal layer.

[0017] Optionally, the heat dissipation substrate is a metal substrate, and the metal substrate is bonded to the base island of the first lead frame by insulating adhesive.

[0018] Optionally, the intelligent power module further includes:

[0019] A second lead frame is disposed inside the package body;

[0020] a plurality of high-voltage driver chips arranged in a predetermined electrical connection relationship, wherein the high-voltage driver chips are arranged on the second lead frame;

[0021] in:

[0022] The distance between the second lead frame and the heat dissipation surface of the package body is a third distance, and the third distance is smaller than the second distance and larger than the first distance.

[0023] Optionally, the package body has a first side and a second side opposite to each other;

[0024] The pins include a low-voltage pin and a high-voltage pin of the high-voltage driver chip, and a power pin of the power chip; wherein:

[0025] The high-voltage pin and the power pin are arranged on the first side of the package body, and the low-voltage pin is arranged on the second side of the package body;

[0026] The first lead frame is disposed on a first side of the package body, and the second lead frame is disposed on a second side of the package body.

[0027] Optionally, the power chip includes a high-side power chip and a low-side power chip, the number of the high-side power chips is 3, including a high-side U-phase power chip, a high-side V-phase power chip, and a high-side W-phase power chip; the number of the low-side power chips is 3, including a low-side U-phase power chip, a low-side V-phase power chip, and a low-side W-phase power chip; wherein:

[0028] The high-side U-phase power chip is arranged adjacent to the low-side U-phase power chip, the high-side V-phase power chip is arranged adjacent to the low-side V-phase power chip, and the high-side W-phase power chip is arranged adjacent to the low-side W-phase power chip.

[0029] Optionally, the number of the high-voltage driver chips is 3, including a high-voltage U-phase driver chip, a high-voltage V-phase driver chip, and a high-voltage W-phase driver chip; the high-voltage driver chip includes a low-side drive ground terminal, and the low-side power chip includes a source terminal; wherein:

[0030] The low-side drive ground terminal of the high-voltage U-phase driver chip is connected to the source terminal of the low-side U-phase power chip, the low-side drive ground terminal of the high-voltage V-phase driver chip is connected to the source terminal of the low-side V-phase power chip, and the low-side drive ground terminal of the high-voltage W-phase driver chip is connected to the source terminal of the low-side W-phase power chip.

[0031] The present invention provides an intelligent power module, comprising: a package; a first lead frame disposed within the package; a plurality of power chips arranged in a predetermined electrical connection relationship, the power chips being disposed on the first lead frame; a plurality of pins disposed on the side edges of the package; and a heat dissipation substrate disposed on the heat dissipation surface of the package relative to the first lead frame. The distance between the first lead frame and the heat dissipation surface of the package is a first distance, and the distance between the pins and the heat dissipation surface of the package is a second distance, the first distance being smaller than the second distance. By reducing the distance between the first lead frame and the heat dissipation surface, the power chip disposed on the first lead frame can be closer to the heat dissipation surface of the package. As the primary heat generating component in the intelligent power module, the reduced distance between the power chip and the heat dissipation surface enables faster heat dissipation from the power chip. Furthermore, the heat dissipation substrate is disposed relative to the first lead frame to further accelerate heat dissipation from the power chip, thereby improving the heat dissipation capability of the intelligent power module and preventing overheating of the intelligent power module. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] The accompanying drawings are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the present invention, and together with the description, serve to explain the principles of the present invention.

[0033] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, for ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0034] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings. These exemplifications do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings are represented as similar elements. Unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0035] Figure 1This is a side view of the internal structure of the first embodiment of the intelligent power module of the utility model;

[0036] Figure 2 A side view of the internal structure of an intelligent power module in the prior art;

[0037] Figure 3 This is a side view of the ceramic substrate of the intelligent power module of the present invention;

[0038] Figure 4 This is a front view of the ceramic substrate of the intelligent power module of the present utility model;

[0039] Figure 5 This is a front view of the internal structure of the intelligent power module of the utility model;

[0040] Figure 6 This is a side view of the internal structure of the second embodiment of the intelligent power module of the present utility model;

[0041] Figure 7 This is a pin diagram of the intelligent power module of the utility model.

[0042] Description of Figure Numbers:

[0043]

[0044] DETAILED DESCRIPTION

[0045] To make the purpose, technical solutions, and advantages of the embodiments of this application more clear, the technical solutions in the embodiments of this application will be clearly and completely described below in conjunction with the drawings in the embodiments of this application. Obviously, the described embodiments are part of the embodiments of this application, not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0046] The following disclosure provides many different embodiments or examples for implementing different structures of the present invention. To simplify the disclosure of the present invention, the components and configurations of specific examples are described below. Of course, these are merely examples and are not intended to limit the present invention. In addition, the present invention may repeat reference numbers and / or letters in different examples. This repetition is for the purpose of simplicity and clarity and does not in itself indicate the relationship between the various embodiments and / or configurations discussed.

[0047] It should be understood that the specific embodiments described herein are only used to explain the present invention and are not intended to limit the present invention. In order to enable those skilled in the art to better understand the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work should fall within the scope of protection of this application.

[0048] The utility model provides an intelligent power module, referring to Figure 1 , Figure 1 This is a schematic structural diagram of the first embodiment of the intelligent power module of the utility model, including:

[0049] Package 1;

[0050] A first lead frame 21 is disposed inside the package body 1;

[0051] A plurality of power chips 3 arranged in a predetermined electrical connection relationship, wherein the power chips 3 are arranged on the first lead frame 21;

[0052] A plurality of pins are arranged on the side of the package body 1;

[0053] The heat dissipation substrate 6 is disposed on the heat dissipation surface of the package body 1 relative to the first lead frame 21; wherein:

[0054] The distance between the first lead frame 21 and the heat dissipation surface of the package body 1 is a first distance, and the distance between the lead and the heat dissipation surface of the package body 1 is a second distance. The first distance is smaller than the second distance.

[0055] Package 1 is injection-molded, encapsulating the chip, inner leads, and lead frame, protecting them. The material can be customized based on actual needs, such as epoxy resin. The lead frame, the chip carrier within the intelligent power module, is used to electrically connect the circuit leads within the intelligent power module to the external pins of the intelligent power module via bonding material, forming an electrical circuit. The bonding material used for the lead frame can be customized based on actual needs, such as gold or copper wire.

[0056] The first lead frame 21 is a carrier of the power chip 3 ; the first lead frame 21 establishes an electrical connection between the circuit lead-out terminal of the power chip 3 and the power pin of the intelligent power module.

[0057] It is understandable that the power chip 3 is the main heat source in the intelligent power module; see Figure 2In the prior art, in order to facilitate wiring arrangement, the lead frame and the pins of the intelligent power module are usually arranged on the same plane. In this case, the lead frame is far away from the heat dissipation surface of the package 1. Therefore, the power chip 3 arranged on the lead frame is also far away from the heat dissipation surface of the package 1, resulting in poor heat dissipation capacity. Figure 2 The right side of the middle package body 1 is the heat dissipation surface.

[0058] In order to improve the heat dissipation of the power chip 3, in this embodiment, the distance between the first lead frame 21 and the heat dissipation surface of the package body 1 is reduced. Since the relative position of the pins and the heat dissipation surface of the package body 1 remains unchanged, the distance between the first lead frame 21 and the heat dissipation surface of the package body 1 is smaller than the distance between the pins and the heat dissipation surface of the package body 1, that is, the first distance is smaller than the second distance. As a result, the power chip 3 arranged on the first lead frame 21 is closer to the heat dissipation surface of the package body 1, and the power chip 3 can achieve faster heat dissipation, thereby improving the heat dissipation capacity of the intelligent power module.

[0059] The specific setting method of the distance between the first lead frame 21 and the heat dissipation surface of the package body 1 can be set based on actual needs, such as setting a step to increase the height of the first lead frame 21 in the thickness direction, thereby achieving the setting of the distance between the first lead frame 21 and the heat dissipation surface of the package body 1; the specific value of the first distance between the first lead frame 21 and the heat dissipation surface of the package body 1 can be set based on the needs of the actual application of the intelligent power module, such as 0.55mm.

[0060] The heat dissipation substrate 6 can increase the speed of heat dissipation. Therefore, in this embodiment, by positioning the heat dissipation substrate 6 relative to the first lead frame 21, the heat dissipation substrate 6 can accelerate the heat dissipation of the power chip 3 on the first lead frame 21, thereby further improving the heat dissipation capability of the intelligent power module. It will be understood that the side of the heat dissipation substrate 6 facing away from the first lead frame 21 is exposed to the environment and directly serves as the heat dissipation surface of the intelligent power module.

[0061] It is understandable that the heat dissipation substrate 6 needs to be made of a material with high thermal conductivity, which may be, but is not limited to, ceramic or metal.

[0062] In this embodiment, the distance between the first lead frame 21 and the heat dissipation surface is reduced, so that the power chip 3 arranged on the first lead frame 21 can be closer to the heat dissipation surface of the package body 1. The power chip 3 is the main heat generating device in the intelligent power module. The reduced distance between the power chip 3 and the heat dissipation surface can enable the power chip 3 to dissipate heat faster. At the same time, a heat dissipation substrate 6 is provided relative to the first lead frame 21 to further accelerate the heat dissipation of the power chip 3, thereby improving the heat dissipation capacity of the intelligent power module and preventing the intelligent power module from overheating.

[0063] Further, see Figure 1The heat dissipation substrate 6 is a ceramic substrate 61 , and the ceramic substrate 61 is soldered on the base island of the first lead frame 21 through tin solder 7 .

[0064] It can be understood that the heat generated by the power chip 3 needs to be transferred to the heat dissipation surface of the package body 1 for dissipation. Therefore, the heat generated by the power chip 3 needs to reach the external environment through the base island, solder, and heat dissipation substrate 6; therefore, the solder between the heat dissipation substrate 6 and the first lead frame 21 will also affect the heat dissipation of the power chip 3; the heat dissipation substrate 6 is welded on the first lead frame 21. Purely for welding, the specific welding material can be selected based on actual needs; and in this embodiment, in order to further improve the heat dissipation of the power chip 3, tin solder 7 is selected as the welding material, and tin solder 7 has good thermal conductivity. Therefore, the heat dissipation substrate 6 is welded to the base island through tin solder 7, so that the heat dissipation capacity can be improved; in other embodiments, welding can also be performed using materials with excellent thermal conductivity such as silver paste.

[0065] Further, see Figure 3 The heat dissipation substrate 6 is a ceramic substrate 61 , and a heat-conducting metal layer 62 is provided on the side of the ceramic substrate 61 close to the first lead frame. The heat-conducting metal layer 62 is welded to the base island of the first lead frame 21 through tin solder 7 .

[0066] To further improve heat dissipation, in this embodiment, a thermally conductive metal layer 62 is further provided on one side of the heat dissipation substrate 6. The thermally conductive metal layer 62 contacts the base islands and can accelerate the transfer of heat from the base islands to the heat dissipation substrate 6 for heat dissipation, thereby improving the heat dissipation of the power chip 3. The thermally conductive metal layer 62 can be made of a material with good thermal conductivity, such as tungsten or molybdenum copper.

[0067] It is understandable that the thermally conductive metal layer 62 contacts the base island, and therefore, the thermally conductive metal layer 62 needs to be welded to the base island. Based on the same reasons as the aforementioned embodiment, tin solder 7 is used to achieve welding of the thermally conductive metal layer 62.

[0068] Further, see Figure 3 、 Figure 4 and Figure 5 The thermally conductive metal layer 62 is consistent with the projection of the first lead frame 21 on the ceramic substrate.

[0069] It can be understood that the thermally conductive metal layer 62 is in direct contact with the first lead frame 21; in order to improve the thermal conductivity efficiency and reduce the material of the thermally conductive metal layer 62; in this embodiment, the thermally conductive metal layer 62 is set to be consistent with the projection of the first lead frame 21 on the ceramic substrate; it can be understood that the first lead frame 21, the thermally conductive metal layer 62, and the heat dissipation substrate 6 are arranged in an overlapping manner. When the thermally conductive metal layer 62 is consistent with the projection of the first lead frame 21 on the ceramic substrate, the thermally conductive metal layer 62 can be completely fitted with the first lead frame 21, so that the heat on the base island can be transferred to the ceramic substrate with the maximum area, thereby improving the heat dissipation efficiency.

[0070] Furthermore, the outer surface of the heat-conducting metal layer 62 is plated with a welding metal layer.

[0071] It is understandable that the thermally conductive metal layer 62 is made of a material with good thermal conductivity, but a metal with good thermal conductivity does not necessarily have good weldability. Therefore, in this embodiment, a welding metal layer is plated on the outer surface of the thermally conductive metal layer 62 so that the thermally conductive metal layer 62 has both good thermal conductivity and weldability. It is understandable that the welding metal layer is made of a material with good weldability, such as nickel, silver, and gold.

[0072] Further, see Figure 6 The heat dissipation substrate 6 is a ceramic substrate 61 or a metal substrate 63 , and the metal substrate 63 is bonded to the base island of the first lead frame 21 through an insulating adhesive 64 .

[0073] It can be understood that when the heat dissipation substrate 6 is metal, if the metal substrate 63 is soldered to the base island by tin solder, a short circuit will occur between the base islands. Therefore, in this embodiment, when the heat dissipation substrate 6 is a metal substrate 63, the metal substrate 63 is bonded to the base island of the first lead frame 21 by an insulating glue 64 to prevent a short circuit between the base islands.

[0074] Furthermore, the intelligent power module further includes:

[0075] A second lead frame 22 is provided inside the package body 1;

[0076] A plurality of high-voltage driver chips 4 arranged in a predetermined electrical connection relationship, wherein the high-voltage driver chips 4 are arranged on the second lead frame 22;

[0077] in:

[0078] The distance between the second lead frame 22 and the heat dissipation surface of the package body 1 is a third distance, which is smaller than the second distance and larger than the first distance.

[0079] The second lead frame 22 is a carrier of the high-voltage driver chip 4 ; the second lead frame 22 establishes electrical connections between the circuit lead-out terminals of the high-voltage driver chip 4 and the high-voltage pins and low-voltage pins of the intelligent power module.

[0080] The high-voltage driver chip 4 is used to drive the power chip 3 .

[0081] In the prior art, the first lead frame 21 and the second lead frame 22 of the intelligent power module are arranged on the same plane as the pins of the intelligent power module, that is, the distance between the first lead frame 21, the second lead frame 22 and the pins of the intelligent power module and the heat dissipation surface of the package 1 is consistent; after the distance between the first lead frame 21 and the heat dissipation surface of the package 1 is reduced to the first distance, the second lead frame 22 and the pins of the intelligent power module are still in the same plane. At this time, the distance between the second lead frame 22 and the first lead frame 21 is the difference between the first distance and the second distance; it can be understood that the power chip 3 arranged on the first lead frame 21 needs to be connected to the high-voltage driver chip 4 arranged on the second lead frame 22, and when the height difference between the first lead frame 21 and the second lead frame 22 is large, it will cause the connecting line arc between the high-voltage driver chip 4 and the power chip 3 to be too high, and the line length The lead frame 22 is too long, making it inconvenient to manufacture. Furthermore, if the distance between the second lead frame 22 and the heat dissipation surface of the package 1 is simultaneously reduced to the first distance, the high-voltage driver chip 4 on the second lead frame 22 and the low-voltage pins will also have the problem of excessively high wire loops and excessively long wire lengths. To address this problem, in this embodiment, the distance between the second lead frame 22 and the heat dissipation surface of the package 1 is reduced to a third distance, which is between the first and second distances. That is, the distance between the second lead frame 22 and the heat dissipation surface of the package 1 is less than the distance between the pins and the heat dissipation surface of the package 1, and greater than the distance between the first lead frame 21 and the heat dissipation surface of the package 1. That is, the height of the second lead frame 22 is between the first lead frame 21 and the pins, thereby preventing excessively high wire loops and excessively long wire lengths between the second lead frame 22 and the first lead frame 21, and between the second lead frame 22 and the pins. The third distance between the second lead frame 22 and the heat dissipation surface of the package 1 can be set based on actual needs, such as being set to the average of the first and second distances.

[0082] In this embodiment, by setting the third distance between the second lead frame 22 and the heat dissipation surface to be between the first distance and the second distance, it is possible to avoid excessive arc height and excessive length of the line between the second lead frame 22 and the first lead frame 21, and between the second lead frame 22 and the pin.

[0083] Furthermore, the package body 1 has a first side and a second side opposite to each other;

[0084] The pins include the low-voltage pin and the high-voltage pin of the high-voltage driver chip 4, and the power pin of the power chip 3; wherein:

[0085] The high-voltage pin and the power pin are arranged on the first side of the package body 1, and the low-voltage pin is arranged on the second side of the package body 1;

[0086] The first lead frame 21 is disposed on a first side of the package body 1 , and the second lead frame 22 is disposed on a second side of the package body 1 .

[0087] It can be understood that the intelligent power module integrates the power chip 3 and the high-voltage driver chip 4. Therefore, when the intelligent power module is used, it is necessary to set a high-voltage power supply and a low-voltage logic power supply, logic signal, etc., and the low-voltage power supply is easily interfered by the high-voltage power supply, causing high-voltage breakdown, false triggering and other problems; in order to solve this problem, in this embodiment, the pins are divided based on high and low voltage and set separately. Specifically, all the low-voltage pins are set on the first side of the package body 1, and all the high-voltage pins and power pins are set on the second side of the package body 1, thereby achieving isolation between the positions of the high and low voltage pins and avoiding interference of the high-voltage pins on the low-voltage pins.

[0088] It is understandable that in order to facilitate connection with high voltage pins, low voltage pins and power pins, the first lead frame 21 can be set on the first side of the package body 1 and the second lead frame 22 can be set on the second side of the package body 1.

[0089] See also Figure 7 ,based on Figure 7 The pins specifically provided in this embodiment are described as follows: Pins 1 to 16 are low-voltage pins, specifically including a low-voltage logic power pin VCC, a low-voltage power ground pin COM, a low-voltage signal pin HIN / LIN, and other low-voltage pins, wherein U, V, and W indicate the pins corresponding to U, V, and W, respectively. For example, LINu is the low-voltage signal pin of the U phase; the same applies to the subsequent description and will not be repeated.

[0090] Pins 18, 22, and 25 are high-voltage pins. Pin 18 is the U-phase high-voltage pin VBu; Pin 22 is the V-phase high-voltage pin VBv; Pin 25 is the W-phase high-voltage pin VBw.

[0091] The remaining pins are power pins, specifically, pin 17 is the DC bus positive pin; pin 19 is the U-phase output terminal; pin 23 is the V-phase output terminal, pin 24 is a false pin, which is internally connected to the P terminal and externally cut off; pin 26 is the W-phase output terminal; in this embodiment, three additional DC bus negative pins 20, 21, and 27 are provided, specifically, pin 20 is the U-phase DC bus negative pole Nu; pin 21 is the V-phase DC bus negative pole Nv; pin 27 is the W-phase DC bus negative pole Nw.

[0092] In this embodiment, an independent DC bus negative pin is provided so that a current sensing resistor and its related protection circuit can be externally connected to the DC bus negative pin, so that overcurrent protection can be independently provided to the three-phase low side.

[0093] Furthermore, the distance between the inner pin 23 corresponding to the high-voltage pin and the heat dissipation surface of the package body 1 is a fourth distance, and the fourth distance is consistent with the second distance.

[0094] It can be understood that after the distance between the first lead frame 21 and the heat dissipation surface of the package body 1 is reduced to the first distance and the distance between the second lead frame 22 and the heat dissipation surface of the package body 1 is reduced to the third distance, the distance between the pin and the heat dissipation surface of the package body 1 is still the second distance; however, the high-voltage pin among the pins is arranged on the first side of the package body 1, and the high-voltage driver chip 4 to be connected to the inner pin 23 of the high-voltage pin is arranged on the second side of the package body 1. Therefore, when the height of the second lead frame 22 where the high-voltage driver chip 4 is located is increased, the inner pin 23 of the high-voltage pin is connected to the second side of the package body 1. The arc of the connecting line between 23 and the high-voltage driver chip 4 is too high and the length is too long, which is not convenient for process manufacturing; therefore, in order to solve this problem, in this embodiment, the distance between the inner pin 23 of the high-voltage pin and the heat dissipation surface of the package body 1 is reduced to be consistent with the first lead frame 21, that is, the distance between the inner pin 23 of the high-voltage pin and the heat dissipation surface of the package body 1 is equal to the distance between the first lead frame 21 and the heat dissipation surface of the package body 1; that is, the fourth distance is equal to the first distance, thereby avoiding the arc of the line between the high-voltage driver chip 4 and the inner pin 23 of the high-voltage pin being too high and the length being too long.

[0095] At the same time, the inner pins 23 of the high-voltage pins are at the same height as the first lead frame 21 , which can also facilitate product packaging.

[0096] In this embodiment, by setting the fourth distance between the inner pin 23 of the high-voltage pin and the heat dissipation surface to be consistent with the first distance, it is possible to avoid the line arc between the high-voltage driver chip 4 and the inner pin 23 of the high-voltage pin being too high and the line length being too long.

[0097] Further, see Figure 5 The first lead frame 21 has a base island for mounting the power chip 3 , and the first lead frame 21 leads the power end of the power chip 3 to the power pin on the first side of the package body 1 .

[0098] The first lead frame 21 includes multiple base islands, and each base island corresponds to a power chip 3; specifically, the power chip 3 can be soldered to the corresponding base island of the first lead frame 21 using solder through corresponding welding equipment. The specific type of solder can be set based on actual needs, and can be but is not limited to tin solder 7 or silver paste.

[0099] The electrical connection between the power end of the power chip 3 and the electrode of the first lead frame 21 is achieved by bonding wire 5. The material of the bonding wire 5 can be set based on actual needs, such as gold wire or copper wire; the first lead frame 21 leads the power end to the corresponding power pin.

[0100] Furthermore, the second lead frame 22 has a base island for mounting the high-voltage driver chip 4 , and the second lead frame 22 leads the low-voltage end of the high-voltage driver chip 4 to the low-voltage pin on the second side of the package body 1 .

[0101] The second lead frame 22 includes multiple base islands, each of which corresponds to a high-voltage driver chip 4; specifically, the high-voltage driver chip 4 can be bonded to the corresponding base island of the second lead frame 22 by chip bonding glue. The specific type of chip bonding glue can be set based on actual needs, and can be but is not limited to conductive silver glue or non-conductive glue.

[0102] The electrical connection between the low-voltage end of the high-voltage driver chip 4 and the electrode of the second lead frame 22 is achieved by bonding wire 5. The material of the bonding wire 5 can be set based on actual needs, such as gold wire or copper wire; the second lead frame 22 leads the low-voltage end to the corresponding low-voltage pin.

[0103] Furthermore, the intelligent power module further includes a third lead frame; wherein:

[0104] The third lead frame leads the high-voltage end of the high-voltage driver chip 4 to the high-voltage pin on the second side of the package body 1 .

[0105] The third lead frame is provided with an inner pin 23 of the high voltage pin. One end of the third lead frame is bonded to the high voltage end of the high voltage driver chip 4 using a bonding wire 5 , and the other end is led out to the corresponding high voltage pin.

[0106] Specifically, in the setting of the inner pin 23, the third lead frame corresponding to the inner pin 23 is set between the high-side power chip 3 and the low-side power chip of the corresponding phase; for example, the inner pin 23 corresponding to the U-phase high-voltage pin is set between the high-side U-phase power chip Q1 and the low-side U-phase power chip Q2; for example, the inner pin 23 corresponding to the V-phase high-voltage pin is set between the high-side V-phase power chip Q3 and the low-side V-phase power chip Q4; for example, the inner pin 23 corresponding to the W-phase high-voltage pin is set between the high-side W-phase power chip Q5 and the low-side W-phase power chip Q6.

[0107] Furthermore, the power chip 3 includes a high-side power chip 3 and a low-side power chip. The number of the high-side power chips 3 is 3, including a high-side U-phase power chip Q1, a high-side V-phase power chip Q3, and a high-side W-phase power chip Q5; the number of the low-side power chips is 3, including a low-side U-phase power chip Q2, a low-side V-phase power chip Q4, and a low-side W-phase power chip Q6; wherein:

[0108] The high-side U-phase power chip Q1 is adjacent to the low-side U-phase power chip Q2 , the high-side V-phase power chip Q3 is adjacent to the low-side V-phase power chip Q4 , and the high-side W-phase power chip Q5 is adjacent to the low-side W-phase power chip Q6 .

[0109] In this embodiment, a three-phase full-bridge circuit is constructed by setting a high-side U-phase power chip Q1, a high-side V-phase power chip Q3, a high-side W-phase power chip Q5, a low-side U-phase power chip Q2, a low-side V-phase power chip Q4, and a low-side W-phase power chip Q6, and a high-power side chip and a low-side power chip are set in each phase.

[0110] It can be understood that for the high-side power chip 3 and the low-side power chip of the same phase, their connection relationship is relative, such as the high-side power chip 3 and the low-side power chip need to be connected to the high-voltage driver chip 4 of the corresponding phase, and the relevant circuits of the corresponding phase; therefore, in order to facilitate the circuit setting, the high-side and low-side power chips of the same phase are arranged adjacent to each other in this embodiment; Figure 5 In the figure, from left to right, the low-side W-phase power chip Q6, the high-side W-phase power chip Q5, the low-side V-phase power chip Q4, the high-side V-phase power chip Q3, the low-side U-phase power chip Q2, and the high-side U-phase power chip Q1 are arranged respectively.

[0111] In order to further facilitate the layout of the circuit, when setting the pins on the second side of the package 1, the high voltage pins can be set adjacent to the output pins of the corresponding phase, such as Figure 6 In the figure, pin 18 is the U-phase high-voltage pin, pin 19 is the U-phase output terminal, and pin 18 is adjacent to pin 19; pin 22 is the V-phase high-voltage pin, pin 23 is the V-phase output terminal, and pin 22 is adjacent to pin 23; pin 25 is the W-phase high-voltage pin, pin 26 is the W-phase output terminal, and pin 25 is adjacent to pin 26.

[0112] Furthermore, the number of the high-voltage driver chips 4 is 3, including a high-voltage U-phase driver chip D1, a high-voltage V-phase driver chip D2, and a high-voltage W-phase driver chip D3; the high-voltage driver chip 4 includes a low-side driver ground terminal, and the low-side power chip includes a source terminal; wherein:

[0113] The low-side drive ground terminal of the high-voltage U-phase driver chip D1 is connected to the source terminal of the low-side U-phase power chip Q2, the low-side drive ground terminal of the high-voltage V-phase driver chip D2 is connected to the source terminal of the low-side V-phase power chip Q4, and the low-side drive ground terminal of the high-voltage W-phase driver chip D3 is connected to the source terminal of the low-side W-phase power chip Q6.

[0114] The high-voltage driver chip 4 is used to drive the power chip 3 of the corresponding phase; specifically, the high-voltage U-phase driver chip D1 drives the high-side U-phase power chip Q1 and the low-side U-phase power chip Q2; the high-voltage V-phase driver chip D2 drives the high-side V-phase power chip Q3 and the low-side V-phase power chip Q4; the high-voltage W-phase driver chip D3 drives the high-side W-phase power chip Q5 and the low-side W-phase power chip Q6

[0115] When the ESD (Electrostatic Protection) capability of the negative pin of the COM-DC bus is poor, it is easy to cause the gate of the low-side power chip to be broken down by ESD; therefore, in order to improve the ESD capability, in this embodiment, a high-voltage driver chip 4 with an independent low-side drive ground terminal is selected, and the source of the low-side power chip of the corresponding phase is connected to the low-side drive ground terminal of the high-voltage driver chip 4, thereby increasing the ESD release circuit; avoiding the ESD voltage between COM-Nu, Nv, and Nw directly acting on the gate of the low-side power chip, and causing the gate-source breakdown problem of the low-side power chip.

[0116] During the overall manufacturing of the intelligent power module, the power chip 3 is soldered to the corresponding base islands of the first lead frame 21 using appropriate welding equipment. The high-voltage driver chip 4 is bonded to the corresponding base islands of the second lead frame 22 using chip bonding equipment. Bonding wires 5 are used to electrically connect the power chip 3 to the electrodes of the first lead frame 21. Bonding wires 5 are also used to bond the driver chip electrodes to the electrodes of the second lead frame 22, and to the electrodes of the driver chip 3. Tin solder 7 is used to weld the ceramic substrate 61 to the base islands of the lead frame. After the intelligent power module completes the bonding process, it is molded with plastic encapsulant, followed by electroplating. Finally, the individual products are separated through a cutting and forming process.

[0117] In the present invention, the terms "first", "second", "third", "fourth" and "fifth" are used for descriptive purposes only and are not to be understood as indicating or implying relative importance. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to the specific circumstances.

[0118] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification and features of different embodiments or examples without contradiction.

[0119] Although the embodiments of the present invention have been shown and described above, the scope of protection of the present invention is not limited thereto. It should be understood that the above embodiments are exemplary and should not be construed as limiting the present invention. A person of ordinary skill in the art may make changes, modifications, and substitutions to the above embodiments within the scope of the present invention, and such changes, modifications, and substitutions should be included within the scope of protection of the present invention. Therefore, the scope of protection of the present invention should be based on the scope of protection of the claims.

Claims

1. An intelligent power module, characterized in that: include: Encapsulation; A first lead frame is disposed inside the package body; a plurality of power chips arranged in a predetermined electrical connection relationship, wherein the power chips are arranged on the first lead frame; A plurality of pins are arranged on the side of the package body; a heat dissipation substrate, disposed on a heat dissipation surface of the package body opposite to the first lead frame; in: The distance between the first lead frame and the heat dissipation surface of the package body is a first distance, the distance between the lead and the heat dissipation surface of the package body is a second distance, and the first distance is smaller than the second distance.

2. The intelligent power module according to claim 1, wherein: The heat dissipation substrate is a ceramic substrate, and the ceramic substrate is soldered on the base island of the first lead frame by tin solder.

3. The intelligent power module according to claim 1, wherein: The heat dissipation substrate is a ceramic substrate. A heat-conducting metal layer is provided on a side of the ceramic substrate close to the first lead frame. The heat-conducting metal layer is soldered to the base island of the first lead frame by tin solder.

4. The intelligent power module according to claim 3, wherein: The thermally conductive metal layer is consistent with a projection of the first lead frame on the ceramic substrate.

5. The intelligent power module according to claim 3, wherein: The outer surface of the heat-conducting metal layer is plated with a welding metal layer.

6. The intelligent power module according to claim 1, wherein: The heat dissipation substrate is a metal substrate, and the metal substrate is bonded to the base island of the first lead frame by insulating adhesive.

7. The intelligent power module according to claim 1, wherein: The intelligent power module further includes: A second lead frame is disposed inside the package body; a plurality of high-voltage driver chips arranged in a predetermined electrical connection relationship, wherein the high-voltage driver chips are arranged on the second lead frame; in: The distance between the second lead frame and the heat dissipation surface of the package body is a third distance, and the third distance is smaller than the second distance and larger than the first distance.

8. The intelligent power module according to claim 7, wherein: The package body has a first side and a second side opposite to each other; The pins include a low-voltage pin and a high-voltage pin of the high-voltage driver chip, and a power pin of the power chip; wherein: The high-voltage pin and the power pin are arranged on the first side of the package body, and the low-voltage pin is arranged on the second side of the package body; The first lead frame is disposed on a first side of the package body, and the second lead frame is disposed on a second side of the package body.

9. The intelligent power module according to claim 7, wherein: The power chip includes a high-side power chip and a low-side power chip. The number of the high-side power chips is 3, including a high-side U-phase power chip, a high-side V-phase power chip, and a high-side W-phase power chip; the number of the low-side power chips is 3, including a low-side U-phase power chip, a low-side V-phase power chip, and a low-side W-phase power chip; wherein: The high-side U-phase power chip is arranged adjacent to the low-side U-phase power chip, the high-side V-phase power chip is arranged adjacent to the low-side V-phase power chip, and the high-side W-phase power chip is arranged adjacent to the low-side W-phase power chip.

10. The intelligent power module according to claim 9, wherein: The number of the high-voltage driver chips is 3, including a high-voltage U-phase driver chip, a high-voltage V-phase driver chip, and a high-voltage W-phase driver chip; the high-voltage driver chip includes a low-side drive ground terminal, and the low-side power chip includes a source terminal; wherein: The low-side drive ground terminal of the high-voltage U-phase driver chip is connected to the source terminal of the low-side U-phase power chip, the low-side drive ground terminal of the high-voltage V-phase driver chip is connected to the source terminal of the low-side V-phase power chip, and the low-side drive ground terminal of the high-voltage W-phase driver chip is connected to the source terminal of the low-side W-phase power chip.

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