Device for improving edge passivation winding plating of crystalline silicon cell

Abstract

The utility model provides a device for improving edge passivation winding plating of a crystalline silicon battery, which comprises a piece clamping part, a bottom plate and a baffle plate, the bottom plate is arranged at the bottom of the piece clamping part, and a plurality of crystalline silicon batteries and baffle plates which are arranged in a staggered manner are arranged on the bottom plate; and the baffle plate is provided with an electrode groove corresponding to the crystalline silicon battery. The beneficial effects of the utility model are that the baffle plates are arranged between the crystalline silicon cells, so that the adhesion between the cells is better, the metal electrodes are protected, gaps are reduced, and the gas winding plating deposition during the passivation deposition of the edges of the crystalline silicon cells is improved.

Description

Technical Field

[0001] The utility model belongs to the field of batteries, and in particular relates to a device for improving the passivation plating of edges of crystalline silicon batteries. Background Art

[0002] With the continuous increase in battery power, various large-size and rectangular cells are becoming increasingly popular. The corresponding module manufacturing requires cutting and scribing, but the power loss of the cell after slicing also increases. The production of crystalline silicon cells with two or more slices, or shingled pattern cells, all require laser scribing, which results in a corresponding loss in cell conversion efficiency and further reduces module power. Currently, the industry is beginning to adopt the method of coating the cut surfaces of the finished cell after slicing, generally with an aluminum oxide or silicon dioxide passivation film. This reduces minority carrier recombination at the cut interface, improves the overall passivation performance and open-circuit voltage of the cell, and thus reduces the cell power loss caused by cutting. Although this method improves the power loss caused by slicing, because the coating is performed once on the cut surface, the strong flow of the reactive gas can flow around to the front and back of the cell, resulting in significant color difference at the cell edge, affecting the cell appearance and seriously affecting the yield. At the same time, color difference at the module end due to lamination can also affect the appearance quality of the module.

[0003] The main solution to improve the color difference caused by the bypass plating caused by the cell edge passivation technology in the existing technology is: in the production process of crystalline silicon cells, laser cutting is performed before the coating. In this way, after cutting, the passivation layer can be plated on the cut surface after cleaning and then coating to reduce cutting losses and avoid the bypass plating. For example, the Chinese patent with publication number CN118299468A introduces a technical solution in the preparation of TOPCon cells. Before the RCA cleaning step in the process, laser scribing and cutting of silicon wafers are added, and then RCA cleaning is performed. After cleaning, aluminum oxide film is plated in the ALD atomic deposition equipment to protect the front and edge of the silicon wafer. After the ALD atomic deposition is completed, the front and back PECVD coating is performed, and finally the electrical performance is tested by screen printing. Although this solution solves the problems of passivation of the cut surface and color difference in appearance due to plating, it has great limitations. First, scribing before coating will make the tooling and automation for battery preparation unsuitable and need to be replaced, which will increase a lot of investment costs. Secondly, slicing before coating divides the battery into two or more pieces, resulting in an exponential increase in the number of battery pieces, which seriously affects the battery production capacity and greatly increases the battery manufacturing cost. Thirdly, the product compatibility of the sliced ​​products before coating is poor, and conversion between different products cannot be achieved. For example, after a battery product is changed to a half-piece cut into two, it can no longer be compatible with a whole-piece battery, and cannot cope with the changing market and customer needs. Utility Model Content

[0004] In view of this, the present invention aims to provide a device for improving the passivation coating of the edges of crystalline silicon cells, so as to solve at least one technical problem in the background technology.

[0005] In order to achieve the above-mentioned purpose, the technical solution of the utility model is achieved as follows:

[0006] A device for improving the passivation plating of the edge of a crystalline silicon cell comprises a sheet clamp component, a base plate, and a baffle. The base plate is arranged at the bottom of the sheet clamp component and is provided with a plurality of staggered crystalline silicon cells and baffles; the baffle is provided with electrode grooves corresponding to the crystalline silicon cells.

[0007] The cut surfaces of the crystalline silicon solar cells are all arranged on the side of the clip component that is exposed to the outside and is not on the baffle side.

[0008] Furthermore, the bottom thickness of the baffle is 1-2 mm.

[0009] Furthermore, the thickness of the electrode groove corresponds to the thickness of the electrode of the clip component.

[0010] Furthermore, the baffle is a high temperature resistant plate.

[0011] Furthermore, the sheet clamp component includes a U-shaped frame and a top plate; the top plate is installed on the U-shaped frame.

[0012] Furthermore, sliding grooves are provided on both sides of the interior of the U-shaped frame, and sliding blocks corresponding to the sliding grooves are provided on both sides of the top plate, so that the top plate can be slidably arranged inside the U-shaped frame through the sliding blocks.

[0013] Furthermore, a handle is provided on the top plate.

[0014] Furthermore, a locking bolt is provided on the top plate, and the locking bolt is arranged on both sides of the handle, and the locking bolt abuts against the baffle.

[0015] Compared with the prior art, the device for improving the edge passivation and wrapping of crystalline silicon cells described in the present invention has the following advantages:

[0016] 1. In this application, by providing baffles between the crystalline silicon cells, the cells can be better fitted together, the metal electrodes can be protected, and the gaps can be reduced while improving the gas-around deposition during the passivation deposition at the edges of the crystalline silicon cells.

[0017] 2. The present application provides electrode grooves on the baffles, and then stacks the cells and the baffles of their electrode grooves in an interlaced manner. This can avoid the stacking gaps on the surface of the crystalline silicon cell caused by the electrodes, thereby improving the color difference problem of the cell edge appearance caused by the gaps between the sheets during edge passivation deposition.

[0018] 3. This application solves the problem of color shading during passivation deposition on the edges of crystalline silicon cells. The metal electrodes are also protected by baffles, preventing them from being coated with thin films. This improves the overall appearance yield by over 1%, and the conversion efficiency by approximately 0.02%. It also reduces lamination color shading and welding risks at the component end, improving the uniformity of cell and component appearance and further increasing product market competitiveness. Furthermore, this invention only adds baffles for protection and automated micro-adjustments, eliminating the need for additional processes or equipment. The original process remains unchanged, facilitating industrialized production. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The accompanying drawings, which constitute part of the present invention, are intended to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are intended to explain the present invention and do not constitute an improper limitation of the present invention. In the accompanying drawings:

[0020] Figure 1 This is an overall schematic diagram of a device for improving the passivation coating of the edges of crystalline silicon cells according to an embodiment of the present utility model.

[0021] Description of reference numerals:

[0022] 1. Baffle; 2. Bottom plate; 3. Electrode slot; 4. Crystalline silicon cell; 5. U-shaped frame; 6. Top plate; 7. Sliding slot; 8. Handle; 9. Locking bolt. DETAILED DESCRIPTION

[0023] It should be noted that, in the absence of conflict, the embodiments of the present invention and the features therein can be combined with each other.

[0024] The present invention will be described in detail below with reference to the accompanying drawings and in combination with embodiments.

[0025] Example 1

[0026] like Figure 1 As shown, a device for improving the passivation coating of the edges of crystalline silicon cells comprises a wafer clamp, a base plate 2, and a baffle 1. The base plate 2 is positioned at the bottom of the wafer clamp, and is provided with a plurality of staggered crystalline silicon cells 4 and baffles 1. The baffle 1 is provided with electrode grooves 3 corresponding to the crystalline silicon cells 4. The cut surfaces of the crystalline silicon cells 4 are all located on the exposed side of the wafer clamp, not on the baffle 1 side. When the stack of crystalline silicon half-cells and baffles 1 is placed in the wafer clamp, the cut surfaces of the crystalline silicon cells 4 face in one direction and are completely exposed outside the wafer box. The crystalline silicon cells 4 are formed by splitting the entire cell into two using laser scribing and mechanical splitting. The baffle 1 shields the metal electrodes on the front and back of the crystalline silicon cells 4 and the edge cells from being coated with a passivation film. The baffle 1 must withstand temperatures exceeding 200°C, and its material and design will not cause scratches on the cells due to hard contact due to tight fit.

[0027] The size of the baffle 1 is the same as that of the crystalline silicon cell 4 .

[0028] In a specific implementation, the bottom thickness of the baffle 1 is 1-2 mm.

[0029] In a specific implementation, the thickness of the electrode groove 3 corresponds to the thickness of the electrode of the clip component.

[0030] In a specific implementation, the baffle 1 is a high temperature resistant plate.

[0031] In a specific implementation, the sheet clamp component includes a U-shaped frame 5 and a top plate 6 ; the top plate 6 is installed on the U-shaped frame 5 .

[0032] In a specific implementation, sliding grooves 7 are provided on both sides of the interior of the U-shaped frame 5 , and sliders corresponding to the sliding grooves 7 are provided on both sides of the top plate 6 , so that the top plate 6 can be slidably arranged inside the U-shaped frame 5 through the sliders.

[0033] In a specific implementation, a handle 8 is provided on the top plate 6 , and locking bolts 9 are provided on the top plate 6 . The locking bolts 9 are arranged on both sides of the handle 8 , and the locking bolts 9 abut against the baffle 1 .

[0034] Use of the wafer clamp component: Slide the top plate 6, remove the top plate 6, and place the crystalline silicon cells 4 and the baffle 1 alternately in the U-shaped frame 5, with the sliced ​​cross-section of the crystalline silicon cells 4 facing in one direction and completely exposed outside the wafer box. Use the handle 8 to slide the top plate 6 along the sliding groove 7 to the top baffle 1, tighten the locking bolts 9 on both sides, so that the locking bolts 9 are in contact with the top top plate 6, so that different numbers of crystalline silicon cells can be used.

[0035] The sliced ​​solar cell sections are stacked horizontally in one direction. A baffle (1) of the same size is added between each cell. The surface of this baffle features a groove pattern identical to the cell metallization pattern. The baffles (1) and cells are stacked in an alternating pattern, with the grooves aligned with the cell electrodes. Once aligned, the cells are stacked so that the sliced ​​sections of each solar cell are aligned. The stack is then placed into a supporting clip assembly. The clip assembly, along with the baffles (1) and cells, is then placed into a deposition apparatus for edge passivation. A layer of aluminum oxide or silicon oxide passivation film is deposited on the edges of the sliced ​​sections of the crystalline silicon cells (4).

[0036] Comparative Example 1

[0037] After the crystalline silicon cell 4 is cut in half, when the half-pieces of crystalline silicon cells 4 are stacked together for the next edge passivation process, the metal electrodes printed on the surface of the cell prevent the silicon wafers from being completely fitted together, resulting in color difference caused by the reaction gas plating during edge passivation deposition.

[0038] In this application, a baffle 1 of the same size is added between each battery (such as a PTFE plate, the material of which is resistant to high temperatures of 200-300 degrees Celsius, has a smooth surface and will not cause hard scratches on the battery). The baffle 1 is grooved corresponding to the metal electrode area of ​​the battery (the groove size can be slightly larger than the size of the metal electrode of the battery). When stacking, the baffle 1 and the battery are staggered with each other, so that the protruding part of the electrode is just facing the groove of the baffle 1, completely avoiding the color difference of the plating caused by the protruding metal electrode when the half-cell battery is stacked together for edge passivation deposition.

[0039] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A device for improving the passivation coating of the edge of a crystalline silicon cell, characterized by: Including film clip parts, bottom plate, baffle, The bottom plate is arranged at the bottom of the sheet clamp component, and a plurality of staggered crystalline silicon cells and baffles are arranged on the bottom plate; and the baffles are provided with electrode grooves corresponding to the crystalline silicon cells.

2. The device for improving the edge passivation of crystalline silicon cells according to claim 1, characterized in that: The thickness of the bottom of the baffle is 1-2mm.

3. The device for improving the edge passivation of crystalline silicon cells according to claim 1, characterized in that: The thickness of the electrode groove corresponds to the thickness of the electrode of the clip member.

4. The device for improving the edge passivation of crystalline silicon cells according to claim 1, characterized in that: The baffle is a high temperature resistant plate.

5. The device for improving the edge passivation of crystalline silicon cells according to claim 1, characterized in that: The sheet clamping parts include a U-shaped frame and a top plate; the top plate is installed on the U-shaped frame.

6. The device for improving the edge passivation of crystalline silicon cells according to claim 5, characterized in that: Sliding grooves are provided on both sides of the interior of the U-shaped frame, and sliding blocks corresponding to the sliding grooves are provided on both sides of the top plate. The top plate can be slidably arranged inside the U-shaped frame through the sliding blocks.

7. The device for improving the edge passivation of crystalline silicon cells according to claim 5, characterized in that: A handle is provided on the top panel.

8. The device for improving the edge passivation of crystalline silicon cells according to claim 7, characterized in that: The top plate is provided with a locking bolt, the locking bolt abuts against the baffle, and the locking bolt is arranged on both sides of the handle.

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