Light-emitting substrate and display device

Abstract

The embodiment of the utility model provides a light-emitting substrate and a display device, relates to the technical field of display, and is used for reducing the preparation cost. The light-emitting substrate comprises a driving backboard, a light-emitting device, a first packaging layer and a second electrode layer. The driving backboard comprises a first bonding pad and a second bonding pad, the light-emitting device comprises a light-emitting stacking layer and a first electrode, and the first electrode is connected with the first bonding pad and shrinks inwards relative to the light-emitting stacking layer and the first bonding pad to form a groove. The first packaging layer comprises a first packaging part and a second packaging part, the first packaging part covers the driving backboard, and the second packaging part covers the light emitting device. The second electrode layer is in direct contact with the first encapsulation layer. The second electrode layer comprises a first conductive part and a second conductive part, the first conductive part is connected with the first bonding pad or the second bonding pad, and the second conductive part wraps the second packaging part and is connected with the light-emitting device. And an air gap is formed between the second electrode layer and the first electrode at the groove. The light-emitting substrate is used for the display device.

Description

Technical Field

[0001] The present disclosure relates to the field of display technology, and in particular to a light-emitting substrate and a display device. Background Art

[0002] With the development of light-emitting diode (LED) technology, display devices using submillimeter (Mini) or even micron (Micro)-scale LEDs have gained widespread application. Micro / Mini LED displays, due to their advantages such as high brightness, high contrast, long life, low energy consumption, and high resolution, are widely used in various display products such as mobile phones, televisions, and laptops. However, the manufacturing process of display devices in related technologies is complex, with low production efficiency and high production costs. Utility Model Content

[0003] The purpose of the embodiments of the present disclosure is to provide a light-emitting substrate and a display device, which are used to simplify the process flow, improve production efficiency, and reduce preparation costs.

[0004] To achieve the above objectives, the embodiments of the present disclosure provide the following technical solutions:

[0005] In one aspect, a light-emitting substrate is provided. The light-emitting substrate includes a driving backplane, a light-emitting device, a first encapsulation layer, and a second electrode layer. The driving backplane includes a first pad and a second pad, the first pad being configured to transmit a driving current signal, and the second pad being configured to transmit a second power supply signal. The light-emitting device includes a light-emitting stacked layer and a first electrode, the first electrode being disposed on one side of the light-emitting stacked layer and connected to the first pad. The first electrode is recessed relative to the light-emitting stacked layer and the first pad, so that a groove is formed between the light-emitting stacked layer, the first electrode, and the first pad.

[0006] The first encapsulation layer is arranged on a side of the driving backplane close to the light-emitting device. The first encapsulation layer includes a first encapsulation portion and a second encapsulation portion, the first encapsulation portion covers the driving backplane, the second encapsulation portion encapsulates the light-emitting device, and exposes at least a portion of the side of the light-emitting stack layer away from the first electrode. The second electrode layer is arranged on a side of the first encapsulation layer away from the driving backplane, and is in direct contact with the first encapsulation layer. The second electrode layer includes a first conductive portion and a second conductive portion, the first conductive portion is located on the surface of the first encapsulation portion away from the driving backplane, and is connected to the first pad or the second pad. The second conductive portion encapsulates the second encapsulation portion and is connected to the exposed portion of the light-emitting device. Wherein, at the groove, there is an air gap between the second electrode layer and the first electrode.

[0007] In the above-mentioned light-emitting substrate, in the process of preparing the second electrode layer or the first encapsulation layer by a deposition process, the thickness of the second electrode layer or the first encapsulation layer can be increased so that the second electrode layer or the first encapsulation layer is sealed in advance at the groove to avoid the second electrode layer from being disconnected at the groove. At this time, the second electrode layer or the first encapsulation layer covers the opening of the groove, and there is an air gap between the second electrode layer and the first electrode. Compared with the related art, the light-emitting substrate provided by the embodiment of the present disclosure does not require the addition of a flat layer, which can simplify the process flow, improve production efficiency, and reduce preparation costs. In addition, the problem of a significant decrease in the light extraction efficiency of the light-emitting device due to the low transmittance of the flat layer can be avoided, which is beneficial to improving the light extraction efficiency of the light-emitting substrate and reducing energy consumption.

[0008] In some embodiments, the second encapsulation portion includes a first sub-portion, a second sub-portion, and a third sub-portion connected in sequence. The first sub-portion is located on the side of the light-emitting stack away from the driver backplane. The second sub-portion covers the sidewalls of the light-emitting stack and the side close to the driver backplane. The third sub-portion covers the sidewalls of the first electrode. The first encapsulation portion is connected to the third sub-portion, with a gap between them and the second sub-portion. The second conductive portion and the third sub-portion have an air gap.

[0009] In some embodiments, a ratio of a maximum thickness of the first encapsulation layer to a thickness of the first electrode is greater than or equal to 0.5 and less than 1.25.

[0010] In some embodiments, the maximum thickness of the second electrode layer is greater than or equal to a first distance; the first distance is the distance between the second sub-portion and the first packaging portion.

[0011] In some embodiments, the maximum thickness of the second electrode layer is greater than or equal to 0.3 μm.

[0012] In some embodiments, the material of the second electrode layer includes indium zinc oxide.

[0013] In some embodiments, the second encapsulation section includes a first subsection, a second subsection, and a third subsection, which are connected in sequence. The first subsection is located on the side of the light-emitting stack away from the driver backplane. The second subsection covers the sidewalls of the light-emitting stack and the side closer to the driver backplane. The third subsection covers the sidewalls of the first electrode. The first encapsulation section is connected to the third subsection and also to the second subsection. An air gap is formed between the first encapsulation section, the second subsection, and the third subsection.

[0014] In some embodiments, a ratio of a maximum thickness of the first encapsulation layer to a thickness of the first electrode is greater than or equal to 1.25.

[0015] In some embodiments, the maximum thickness of the second electrode layer is 0.07 μm to 0.1 μm.

[0016] In some embodiments, the material of the second electrode layer includes indium zinc oxide and / or indium tin oxide.

[0017] In some embodiments, the plurality of light-emitting devices include a first light-emitting device and a second light-emitting device, a first solder pad directly connected to the first electrode of the second light-emitting device is a target solder pad, and the first encapsulation portion exposes at least a portion of the target solder pad. The second electrode layer includes a first connecting electrode and a second connecting electrode spaced apart from each other, one end of the first connecting electrode being directly connected to the exposed portion of the first light-emitting device, and the other end being directly connected to the second solder pad. One end of the second connecting electrode being directly connected to the exposed portion of the first light-emitting device, and the other end being directly connected to the exposed portion of the target solder pad corresponding to one of the second light-emitting devices. Alternatively, one end of the second connecting electrode being directly connected to the exposed portion of one of the second light-emitting devices, and the other end being directly connected to the exposed portion of the target solder pad corresponding to another of the second light-emitting devices.

[0018] In some embodiments, the transmittance of the second conductive portion is greater than or equal to 80%; and / or the transmittance of the second packaging portion is greater than or equal to 90%.

[0019] In some embodiments, the maximum thickness of the first encapsulation layer is greater than or equal to 0.3 μm.

[0020] In another aspect, a display device is provided, comprising the light-emitting substrate described in any one of the above embodiments and a housing, wherein the light-emitting substrate is disposed in the housing.

[0021] The above-mentioned display device has the same structure and beneficial technical effects as the light-emitting substrate provided in some of the above-mentioned embodiments, which will not be described in detail here. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] To more clearly illustrate the technical solutions of the present disclosure, the following briefly introduces the drawings required for use in some embodiments of the present disclosure. Obviously, the drawings described below are only drawings of some embodiments of the present disclosure, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of the present disclosure.

[0023] Figure 1 is a structural diagram of a display device according to some embodiments;

[0024] Figure 2 is a structural diagram of another display device according to some embodiments;

[0025] Figure 3 is a cross-sectional view of a display device according to some embodiments;

[0026] Figure 4 is a top view of a light-emitting substrate according to some embodiments;

[0027] Figure 5 is a structural diagram of a light emitting device according to some embodiments;

[0028] Figure 6 for Figure 4 A cross-sectional view along section line CC;

[0029] Figure 7 for Figure 6 A partial enlarged view of point D in the middle;

[0030] Figure 8 for Figure 4 Another cross-sectional view along section line CC;

[0031] Figure 9 for Figure 8 A partial enlarged view of point E in the middle;

[0032] Figure 10 is a partially enlarged view of a light emitting device according to some embodiments;

[0033] Figure 11 for Figure 4 Another cross-sectional view along section line CC. DETAILED DESCRIPTION

[0034] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in some embodiments of the present disclosure. Obviously, the embodiments described are only some embodiments of the present disclosure, not all embodiments. Based on the embodiments provided by the present disclosure, all other embodiments obtained by ordinary technicians in this field are within the scope of protection of the present disclosure.

[0035] Unless the context requires otherwise, throughout the specification and claims, the term "comprise" and its other forms, such as the third person singular form "comprises" and the present participle form "comprising", are to be interpreted as open and inclusive, that is, "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiments", "example", "specific example" or "some examples" are intended to indicate that the particular features, structures, materials or characteristics associated with the embodiment or example are included in at least one embodiment or example of the present disclosure. The schematic representation of the above terms does not necessarily refer to the same embodiment or example. In addition, the particular features, structures, materials or characteristics may be included in any one or more embodiments or examples in any appropriate manner.

[0036] In the following, the terms "first" and "second" are used for descriptive purposes only and should not be understood to indicate or imply relative importance or implicitly specify the number of the technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the embodiments of the present disclosure, unless otherwise specified, "plurality" means two or more.

[0037] When describing some embodiments, the expressions "coupled" and "connected" and their derivatives may be used. The term "connected" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be directly connected or indirectly connected through an intermediate medium. The term "coupled" indicates, for example, that two or more components are in direct physical or electrical contact. The term "coupled" or "communicatively coupled" may also refer to two or more components that are not in direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited to the contents of this document.

[0038] “At least one of A, B and C” has the same meaning as “at least one of A, B or C” and both include the following combinations of A, B and C: A only, B only, C only, the combination of A and B, the combination of A and C, the combination of B and C, and the combination of A, B and C.

[0039] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.

[0040] The use of "adapted to" or "configured to" herein is intended to be open and inclusive language that does not exclude devices adapted or configured to perform additional tasks or steps.

[0041] As used herein, "about," "substantially," or "approximately" includes the stated value and an average value that is within an acceptable range of deviation from the particular value as determined by one of ordinary skill in the art taking into account the measurements in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system).

[0042] As used herein, "parallel", "perpendicular", and "equal" include the situations described and situations similar to the situations described, and the range of the similar situations is within an acceptable deviation range, wherein the acceptable deviation range is as determined by a person of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the specific quantity (i.e., the limitations of the measurement system). For example, "parallel" includes absolute parallelism and approximate parallelism, wherein the acceptable deviation range of approximate parallelism can be, for example, a deviation within 5°; "perpendicular" includes absolute perpendicularity and approximate perpendicularity, wherein the acceptable deviation range of approximate perpendicularity can also be, for example, a deviation within 5°. "Equal" includes absolute equality and approximate equality, wherein the acceptable deviation range of approximate equality can be, for example, that the difference between the two equals is less than or equal to 5% of either one.

[0043] It will be understood that when a layer or element is referred to as being on another layer or substrate, it can be directly on the other layer or substrate, or intervening layers may be present therebetween.

[0044] Exemplary embodiments are described herein with reference to cross-sectional and / or plan views that are idealized exemplary drawings. In the drawings, the thickness of layers and the area of ​​regions are exaggerated for clarity. Therefore, variations in shape relative to the drawings due to, for example, manufacturing techniques and / or tolerances are contemplated. Therefore, the exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but rather include deviations in shape due to, for example, manufacturing. For example, an etched region shown as a rectangle will typically have curved features. Therefore, the regions shown in the drawings are schematic in nature, and their shapes are not intended to illustrate the actual shape of regions of the device and are not intended to limit the scope of the exemplary embodiments.

[0045] In the present specification, when an element (or region, layer, part) is referred to as “coating” another element, it can directly coat the other element or an intervening third element may also be present.

[0046] In the present disclosure, terms such as "lower", "below", "above" and similar words are used to explain the relationship between components shown in the drawings. Terms may be relative concepts and described based on the directions shown in the drawings, but are not limited thereto.

[0047] The term "opposite" means that the first element may be directly or indirectly opposite to the second element. In the case where a third element is interposed between the first and second elements, the first and second elements may be understood to be indirectly opposite to each other although they are still opposite to each other.

[0048] like Figure 1 As shown, some embodiments of the present disclosure provide a display device 1000 , which may be any device that displays an image, whether in motion (eg, video) or fixed (eg, still image), and whether text or text.

[0049] For example, see Figure 1 and Figure 2 The display device 1000 can be any product or component with a display function, such as a television, a laptop computer, a tablet computer, a mobile phone, a personal digital assistant (PDA), a car display, a flight display, a navigator, a wearable device, an augmented reality (AR) device, a virtual reality (VR) device, or an extended reality (XR) device.

[0050] For example, Figure 1 As shown, the display device 1000 may be a portable display product; for example, the display device 1000 may be Figure 1 For example, see Figure 2 , the display device 1000 may be a wearable device; for example, the display device 1000 may be Figure 2 The watch shown in.

[0051] It should be noted that, depending on different application scenarios, the display device 1000 can be a flat display device, a curved display device, a foldable display device, etc., and the shape of the display surface of the display device 1000 can be any of circular, elliptical, polygonal or irregular shapes.

[0052] In some embodiments, see Figure 3 The display device 1000 includes a light-emitting substrate 100 , a housing 200 and a cover 300 . The light-emitting substrate 100 may be disposed in the housing 200 .

[0053] For example, Figure 3As shown, the housing 200 may be a box-shaped structure with an opening, the light-emitting substrate 100 is disposed in the housing 200 , and the cover 300 is disposed on the light-emitting side of the light-emitting substrate 100 and located at the opening of the housing 200 .

[0054] It should be noted that the light emitting substrate 100 has a light emitting side and a non-light emitting side. The light emitting side refers to the side of the light emitting substrate 100 that can emit light ( Figure 3 The non-light-emitting side refers to the other side opposite to the light-emitting side ( Figure 3 The lower side of the light emitting substrate 100).

[0055] In some embodiments, see Figure 3 The display device 1000 may further include a circuit board 400 and a battery 500. The circuit board 400 and the battery 500 may be disposed on the non-light-emitting side of the light-emitting substrate 100. The circuit board 400 is connected to the light-emitting substrate 100 to provide display control signals to the light-emitting substrate 100. The battery 500 is connected to the light-emitting substrate 100 to provide power signals to the light-emitting substrate 100.

[0056] In some embodiments, see Figure 3 The light-emitting substrate 100 includes a driving backplane 10 and a light-emitting device 20. The light-emitting device 20 is disposed on the driving backplane 10 and connected to the driving backplane 10 to receive a driving signal to drive the light-emitting device 20 to emit light.

[0057] It should be noted that the light-emitting device 20 may include a Micro LED and / or a Mini LED. The size (e.g., length) of the Micro LED is less than 50 microns, for example, 10 to 50 microns. The size (e.g., length) of the Mini LED is 50 to 150 microns, for example, 80 to 120 microns.

[0058] Among them, see Figure 4 The driving backplane 10 has a light-emitting area A, which can be configured to accommodate light-emitting devices 20. For example, the driving backplane 10 has a first solder pad P1 located in the light-emitting area A. A plurality of light-emitting devices 20 are disposed in the light-emitting area A and connected to the driving backplane 10 via the first solder pad P1. Furthermore, the plurality of light-emitting devices 20 can be arranged, for example, in multiple rows and columns.

[0059] In addition, see Figure 4 The driving backplane 10 has a peripheral area B, which is located on at least one side of the light-emitting area A. Figure 4In the example, the peripheral area B surrounding the light-emitting area A is used for illustration. The peripheral area B can be configured to house a driving circuit, circuit traces, and pads. For example, the driver backplane 10 has a second pad P2 located in the peripheral area B. The light-emitting device 20 can be connected to the second pad P2 via a circuit trace to receive a driving signal, such as a second power supply signal.

[0060] In some embodiments, see Figure 5 The light emitting device 20 includes a first electrode 210 , a second electrode 220 and a light emitting stack layer 230 . The first electrode 210 and the second electrode 220 are disposed on opposite sides of the light emitting stack layer 230 and are connected to the light emitting stack layer 230 .

[0061] The light emitting stacked layer 230 includes a quantum well layer 233, and a first semiconductor doping layer 231 and a second semiconductor doping layer 232 disposed on opposite sides of the quantum well layer 233. The first semiconductor doping layer 231 may be located between the quantum well layer 233 and the first electrode 210, for example.

[0062] It should be noted that one of the first semiconductor doping layer 231 and the second semiconductor doping layer 232 is an N-type doped semiconductor layer, and the other is a P-type doped semiconductor layer. For example, the material of the first semiconductor doping layer 231 is a P-type doped semiconductor layer, and the material of the second semiconductor doping layer 232 is N-type doped gallium nitride. The material of the quantum well layer 233 includes gallium nitride and / or indium gallium nitride.

[0063] In addition, if Figure 5 As shown, the first electrode 210 can, for example, be retracted relative to the light-emitting stack 230. That is, in an orthographic projection onto the driving backplane 10, the first electrode 210 is close to the boundary of the end face of the light-emitting stack 230 and is located within the range of the boundary of the end face of the light-emitting stack 230 close to the first electrode 210. This arrangement can reduce the area of ​​the first electrode 210, lower costs, and the corresponding pad on the driving backplane 10 can be smaller.

[0064] In some embodiments, as Figure 5 As shown, the light-emitting device 20 may further include a current spreading layer 240 and a second encapsulation layer 250. The current spreading layer 240 is disposed between the first electrode 210 and the first semiconductor doping layer 231 to reduce the contact resistance between the first electrode 210 and the first semiconductor doping layer 231 and improve the conductivity. The second encapsulation layer 250 covers the sidewalls of the light-emitting stacked layer 230 and the side of the first semiconductor doping layer 231 away from the second semiconductor doping layer 232, and exposes at least a portion of the current spreading layer 240 to provide insulation protection. It should be noted that the material of the second encapsulation layer 250 includes an inorganic insulating material, such as silicon nitride, but the embodiments of the present disclosure are not limited thereto.

[0065] It should be understood that there are two main driving modes for the light emitting substrate 100: passive matrix (PM) driving and active matrix (AM) driving. Based on different driving modes, the structure of the driving backplane 10 is different.

[0066] The following takes the light-emitting substrate 100 using AM driving as an example to exemplify some embodiments of the present disclosure, but the implementation of the present disclosure is not limited thereto, and PM driving may also be considered as long as the same technical concept is applied.

[0067] like Figure 6 As shown, the driving backplane 10 may further include a substrate 110 and a driving circuit layer 120 , and the driving circuit layer 120 is disposed on one side of the substrate 110 .

[0068] The substrate 110 may be made of a flexible material or a rigid material. The flexible material may include at least one of epoxy resin, triazine, silicone resin, and polyimide, but the present disclosure is not limited thereto. The rigid material may include a glass material containing silicon dioxide as a main component, but the present disclosure is not limited thereto.

[0069] In addition, the driving circuit layer 120 may include a pixel driving circuit, which is connected to the first electrode 210 of the light-emitting device 20 through the first pad P1 to transmit a driving current signal to the light-emitting device 20, so that each pixel driving circuit can independently drive the connected light-emitting device 20 to emit light, forming AM driving. The second electrode 220 of the light-emitting device 20 can be connected to the second pad P2 to receive a power signal.

[0070] The pixel driving circuit can be connected to, for example, a first power signal terminal and a data signal terminal. The first power signal terminal can be connected to the positive electrode of the battery 500 to transmit the first power signal. The data signal terminal can be connected to the circuit board 400 to transmit the data signal. The pixel driving circuit is configured to generate a driving current based on the first power signal and the data signal.

[0071] At least one second pad P2 can be connected to the negative electrode of the battery 500 to transmit a second power signal. The first power signal and the second power signal can be constant DC voltages, and the voltage of the first power signal is greater than the voltage of the second power signal.

[0072] In some embodiments, as Figure 6 As shown, the first electrode 210 is also retracted compared to the first pad P1, that is, in the orthographic projection onto the driving backplane 10, the first electrode 210 is close to the boundary of the end face of the first pad P1, and is also located within the range of the boundary of the end face of the first pad P1 close to the first electrode 210.

[0073] At this point, the first electrode 210 is retracted relative to the light-emitting stack 230 and the first pad P1, forming a groove between the light-emitting stack 230, the first electrode 210, and the first pad P1. This arrangement reduces the bonding area between the first electrode 210 and the first pad P1, thus reducing the size of the first electrode 210 and the first pad P1 and lowering costs.

[0074] The thickness of the first electrode 210 can be such that the first electrode 210 forms a good bonding connection with the first pad P1. For example, the thickness of the first electrode 210 is 0.3 μm to 1 μm. For example, the thickness of the first electrode 210 is any one of 0.3 μm, 0.4 μm, 0.5 μm, 0.6 μm, 0.7 μm, 0.8 μm, 0.9 μm, and 1 μm.

[0075] In some embodiments, as Figure 6 As shown, the light-emitting substrate 100 further includes a second electrode layer 30 and a first encapsulation layer 40. The first encapsulation layer 40 is disposed on a side of the driving backplane 10 close to the light-emitting device 20, and the second electrode layer 30 is disposed on a side of the first encapsulation layer 40 away from the driving backplane 10. That is, the first encapsulation layer 40 is located between the second electrode layer 30 and the light-emitting device 20, and between the second electrode layer 30 and the driving backplane 10, to provide insulation protection.

[0076] In this document, "maximum thickness" may be understood as the thickness of a film layer formed by a deposition process on a plane (flat area) perpendicular to the deposition direction. The deposition process may include any one of a sputtering process, a chemical vapor deposition process, a physical vapor deposition process, or an atomic layer deposition process.

[0077] The material of the first encapsulation layer 40 includes an inorganic insulating material, such as silicon nitride, but the embodiments of the present disclosure are not limited thereto. The maximum thickness of the first encapsulation layer 40 is greater than or equal to 0.3 μm, which can provide insulation protection for the light-emitting device 20 and effectively reduce the risk of failure of the light-emitting device 20 due to water and oxygen corrosion. The maximum thickness of the first encapsulation layer 40 can be, for example, the thickness of the portion of the first encapsulation layer 40 located on the first pad P1, that is, Figure 7 The thickness shown in T1.

[0078] See Figure 6 The second electrode layer 30 is in electrical contact with the end surface of the light-emitting stacked layer 230 away from the first electrode 210, and is coupled to the second pad P2 to provide a second power signal to the light-emitting device 20. In this case, the second electrode 220 may be, for example, a portion of the second electrode layer 30 in contact with the end surface of the light-emitting stacked layer 230 away from the first electrode 210.

[0079] The material of the second electrode layer 30 includes a transparent conductive material. For example, the material of the second electrode layer 30 includes indium zinc oxide and / or indium tin oxide. The embodiments of the present disclosure are not limited thereto.

[0080] In some related technologies, the light-emitting substrate also includes a planar layer that covers the periphery of the light-emitting device and fills the groove formed between the light-emitting device and the first pad. This prevents the second electrode layer from being disconnected at the groove during sputtering. However, the addition of the planar layer to the light-emitting substrate increases the number of manufacturing steps, resulting in reduced production efficiency and increased production costs.

[0081] Based on this, see Figure 6 In the light-emitting substrate 100 provided by the embodiment of the present disclosure, the second electrode layer 30 is in direct contact with the first encapsulation layer 40. Here, "direct contact" between the second electrode layer 30 and the first encapsulation layer 40 means that there is no other film layer between the second electrode layer 30 and the first encapsulation layer 40, but a gap may exist in part of the area between the second electrode layer 30 and the first encapsulation layer 40.

[0082] For example, Figure 6 and Figure 7 As shown, the first encapsulation layer 40 includes a first encapsulation portion 41 and a second encapsulation portion 42 . The first encapsulation portion 41 covers the driving backplane 10 , and the second encapsulation portion 42 encapsulates the light-emitting device 20 and exposes at least a portion of the side of the light-emitting stack layer 230 away from the first electrode 210 .

[0083] Furthermore, the second electrode layer 30 includes a first conductive portion 310 and a second conductive portion 320. The first conductive portion 310 is located on the surface of the first packaging portion 41 away from the driver backplane 10 to couple to the second pad P2. Here, the first conductive portion 310 can be directly connected to the second pad P2 or indirectly connected to the second pad P2. For details, please refer to the following. The second conductive portion 320 covers the second packaging portion 42 and is connected to the exposed portion of the light-emitting device 20. An air gap S is formed between the second electrode layer 30 and the first electrode 210 at the groove.

[0084] In this case, in the process of preparing the second electrode layer 30 or the first encapsulation layer 40 using a deposition process, the thickness of the second electrode layer 30 or the first encapsulation layer 40 can be increased so that the second electrode layer 30 or the first encapsulation layer 40 is sealed in advance at the groove to avoid the second electrode layer 30 from being disconnected at the groove. At this time, the second electrode layer 30 or the first encapsulation layer 40 covers the opening of the groove, and there is an air gap S between the second electrode layer 30 and the first electrode 210. Compared with the related art, the light-emitting substrate 100 provided in the embodiment of the present disclosure does not require the addition of a flat layer, which can simplify the process flow, improve production efficiency, and reduce preparation costs. In addition, the problem of a significant decrease in the light extraction efficiency of the light-emitting device 20 due to the low transmittance of the flat layer can be avoided, which is beneficial to improving the light extraction efficiency of the light-emitting substrate 100 and reducing energy consumption.

[0085] In some embodiments, see Figure 6 and Figure 7 The second encapsulation portion 42 includes a first sub-portion 421, a second sub-portion 422, and a third sub-portion 423, which are connected in sequence. The first sub-portion 421 is located on the side of the light-emitting stacked layer 230 away from the driving backplane 10. The second sub-portion 422 covers the sidewalls of the light-emitting stacked layer 230 and the side close to the driving backplane 10. The third sub-portion 423 covers the sidewalls of the first electrode 210. At this time, an air gap S is formed between the second conductive portion 320 and the third sub-portion 423, or an air gap S is formed between the second sub-portion 422 and the third sub-portion 423.

[0086] In some examples, such as Figure 8 and Figure 9 As shown, the first encapsulation portion 41 is connected to the third sub-portion 423 and also to the second sub-portion 422. Furthermore, an air gap S is present between the first encapsulation portion 41, the second sub-portion 422, and the third sub-portion 423. In other words, during the process of preparing the first encapsulation layer 40 using a chemical vapor deposition process, the first encapsulation layer 40 can be pre-sealed at the groove. In this case, the first encapsulation layer 40 covers the opening of the groove, so that during the subsequent preparation of the second electrode layer 30, the second electrode layer 30 can be directly formed on the surface of the first encapsulation layer 40 without the risk of disconnection.

[0087] In this case, the ratio of the maximum thickness of the first encapsulation portion 41 to the thickness of the first electrode 210 is greater than or equal to 1.25. In this case, during the process of preparing the first encapsulation layer 40 using the chemical vapor deposition process, since the first encapsulation layer 40 is thicker, the first encapsulation layer 40 can be sealed in advance at the groove. The maximum thickness of the first encapsulation layer 40 can be, for example, the thickness of the portion of the first encapsulation layer 40 located on the first pad P1, that is, Figure 7 The thickness shown in T1.

[0088] On this basis, the second electrode layer 30 can be directly formed on the surface of the first packaging layer 40, and the second electrode layer 30 does not need to be designed to increase its thickness to avoid the second electrode layer 30 being disconnected at the groove. That is, the maximum thickness of the second electrode layer 30 can be set smaller. Exemplarily, the maximum thickness of the second electrode layer 30 can be, for example, 0.07μm to 0.1μm. For example, the maximum thickness of the second electrode layer 30 is any one of 0.07μm, 0.075μm, 0.08μm, 0.085μm, 0.09μm, 0.095μm and 0.1μm. Among them, the maximum thickness of the second electrode layer 30 can be, for example, the thickness of the portion of the second electrode layer 30 located on the first pad P1, that is Figure 7 The thickness shown in T2.

[0089] It should be understood that during the sputtering process to form the second electrode layer 30, the temperature of the driving backplane 10 will gradually rise. Specifically, when the maximum thickness of the second electrode layer 30 is 0.07 μm to 0.1 μm, the time required to prepare the second electrode layer 30 using the sputtering process is relatively short, and the maximum temperature of the driving backplane 10 is relatively low. The maximum temperature of the driving backplane 10 is lower than the temperature at which indium tin oxide begins to crystallize, preventing crystallization of indium tin oxide. Furthermore, the maximum temperature of the driving backplane 10 is lower than the temperature at which indium zinc oxide begins to crystallize, preventing crystallization of indium zinc oxide.

[0090] Based on this, the material of the second electrode layer 30 includes indium zinc oxide and / or indium tin oxide. The second electrode layer 30 formed by the sputtering process has a high transmittance and does not produce crystallization. Subsequently, a weakly acidic etching solution (hydrogen fluoride solution) can be used for patterning. There are more types of etching solutions to choose from, the cost is low, and the etching yield is high.

[0091] In other examples, such as Figure 6 and Figure 7 As shown, the first encapsulation portion 41 is connected to the third sub-portion 423, and there is a gap between the first encapsulation portion 41 and the second sub-portion 422. Furthermore, there is an air gap S between the second conductive portion 320 and the third sub-portion 423. That is, during the process of preparing the first encapsulation layer 40 using a chemical vapor deposition process, the first encapsulation layer 40 is not prematurely sealed at the groove, and the first encapsulation layer 40 covers the inner wall of the groove within the groove. At this time, during the process of preparing the second electrode layer 30 using a sputtering process, the second electrode layer 30 is sealed at the groove, thereby covering the opening of the groove and preventing the second electrode layer 30 from being disconnected at the groove.

[0092] In this case, the ratio of the maximum thickness of the first encapsulation layer 40 to the thickness of the first electrode 210 is less than 1.25. In this case, during the process of preparing the first encapsulation layer 40 using the chemical vapor deposition process, due to the thin thickness of the first encapsulation layer 40, the first encapsulation layer 40 will be formed in the groove and will not be sealed in advance at the groove. The maximum thickness of the first encapsulation layer 40 can be, for example, the thickness of the portion of the first encapsulation layer 40 located on the first pad P1, that is, Figure 7 The thickness shown in T1.

[0093] Furthermore, the ratio of the maximum thickness of the first encapsulation layer 40 to the thickness of the first electrode 210 is greater than or equal to 0.5. Thus, after the first encapsulation layer 40 is formed, the remaining gap in the groove is small, that is, the distance L1 between the second sub-portion 422 and the first encapsulation portion 41 is small, and the groove is sealed in advance using the second electrode layer 30.

[0094] On this basis, the maximum thickness of the second electrode layer 30 is greater than or equal to the first distance L1. The first distance L1 is the distance between the second sub-portion 422 and the first packaging portion 41. For example, the maximum thickness of the second electrode layer 30 is greater than or equal to 0.3 μm. The maximum thickness of the second electrode layer 30 can be, for example, the thickness of the portion of the second electrode layer 30 located on the first pad P1, i.e. Figure 7 The thickness is shown as T2 in FIG. In this way, during the sputtering process for preparing the second electrode layer 30, the second electrode layer 30 can be sealed at the groove, thereby covering the opening of the groove and preventing the second electrode layer 30 from being disconnected at the groove. Here, the slope angle of the surface of the second electrode layer 30 facing the groove can be, for example, less than or equal to 45°.

[0095] It should be understood that during the sputtering process to form the second electrode layer 30, the temperature of the driving backplate 10 will gradually rise. Specifically, when the maximum thickness of the second electrode layer 30 is greater than or equal to 0.3 μm, the sputtering process takes a long time to prepare the second electrode layer 30, and the maximum temperature of the driving backplate 10 rises to a high level. If the maximum temperature of the driving backplate 10 is greater than or equal to the temperature at which indium tin oxide begins to crystallize, this may cause indium tin oxide to crystallize. Furthermore, if the maximum temperature of the driving backplate 10 is less than the temperature at which indium zinc oxide begins to crystallize, this will not cause indium zinc oxide to crystallize.

[0096] Based on this, the material of the second electrode layer 30 includes indium zinc oxide. For example, the material of the second electrode layer 30 is indium zinc oxide. The second electrode layer 30 formed by the sputtering process has a high transmittance and does not produce crystallization. Subsequent patterning can be performed using a weakly acidic etchant (hydrogen fluoride solution), which provides a wider range of etchant options, low cost, and high etching yield.

[0097] In any of the above examples, the transmittance of the second conductive portion 320 can be greater than or equal to 80%. For example, the transmittance of the second conductive portion 320 is 82% to 96%. The transmittance of the second encapsulation portion 42 can be greater than or equal to 90%. For example, the transmittance of the second encapsulation portion 42 is 92% to 97%.

[0098] In some embodiments, see Figure 10 and Figure 11 In the light-emitting substrate 100, at least two light-emitting devices 20 are connected in series. Thus, the multiple light-emitting devices 20 connected in series can use high voltage to transmit drive signals, thereby reducing drive current and power consumption. For example, the light-emitting substrate 100 includes multiple light-emitting device groups 2, each of which includes multiple light-emitting devices 20 connected in series. For example, the light-emitting device group 2 may include two, three, four, or more light-emitting devices 20 connected in series, although this is not specifically limited in the present embodiment.

[0099] For example, see Figure 10 and Figure 11 The plurality of light emitting devices 20 include a first light emitting device 21 and a second light emitting device 22 , a first pad P1 directly connected to the first electrode 210 of the second light emitting device 22 is a target pad M, and the first encapsulation portion 41 exposes at least a portion of the target pad M.

[0100] At this time, the second electrode layer 30 includes a first connection electrode 31 and a second connection electrode 32 arranged at intervals. One end of the first connection electrode 31 is directly connected to the exposed portion of the first light emitting device 21, and the other end is directly connected to the second pad P to transmit the second power signal.

[0101] Moreover, one end of the second connecting electrode 32 is directly connected to the exposed portion of the first light-emitting device 21, and the other end is directly connected to the exposed portion of the target pad M corresponding to a second light-emitting device 22; or, one end of the second connecting electrode 32 is directly connected to the exposed portion of a second light-emitting device 22, and the other end is directly connected to the exposed portion of the target pad M corresponding to another second light-emitting device 22.

[0102] It should be noted that the target pad M corresponding to the second light emitting device 22 is the first pad P1 to which the first electrode 210 of the second light emitting device 22 is directly connected.

[0103] For example, Figure 10 and Figure 11 As shown, when two light emitting devices 20 are connected in series, one end of the second connection electrode 32 is directly connected to the exposed portion of the first light emitting device 20 , and the other end is directly connected to the exposed portion of the target pad M corresponding to one of the second light emitting devices 22 .

[0104] For another example, as shown in the figure, when three or more light-emitting devices 20 are connected in series, one end of a second connection electrode 32a is directly connected to the exposed portion of the first light-emitting device 20, and the other end is directly connected to the exposed portion of the target pad M corresponding to a second light-emitting device 22. One end of a second connection electrode 32b is directly connected to the exposed portion of one second light-emitting device 22, and the other end is directly connected to the exposed portion of the target pad M corresponding to another second light-emitting device 22.

[0105] In other embodiments, see Figure 6 and Figure 8 In the light emitting substrate 100 , at least one light emitting device 20 is directly connected to the first pad P1 and the second pad P2 , so that each light emitting device 20 can be controlled individually.

[0106] For example, as shown in the figure, the first electrodes 210 of the plurality of light-emitting devices 20 included in the light-emitting substrate 100 are each connected to a first pad P1. In this case, the second electrode layer 30 can be a continuous, integral layer structure, that is, the second electrodes 220 of the plurality of light-emitting devices 20 are directly connected and can be directly connected to the same second pad P2, which simplifies the process and reduces the manufacturing cost.

[0107] The above description is merely a specific embodiment of the present disclosure, but the scope of protection of the present disclosure is not limited thereto. Any changes or substitutions that a person skilled in the art can conceive within the technical scope disclosed in the present disclosure should be included within the scope of protection of the present disclosure. Therefore, the scope of protection of the present disclosure should be based on the scope of protection of the claims.

Claims

1. A light-emitting substrate, characterized in that: include: A driving backplane, comprising a first pad and a second pad, wherein the first pad is configured to transmit a driving current signal, and the second pad is configured to transmit a second power supply signal; A light-emitting device comprising a light-emitting stacked layer and a first electrode, wherein the first electrode is disposed on one side of the light-emitting stacked layer and connected to the first pad; the first electrode is retracted relative to the light-emitting stacked layer and the first pad, so that a groove is formed between the light-emitting stacked layer, the first electrode, and the first pad; a first encapsulation layer, disposed on a side of the driving backplane close to the light-emitting device; the first encapsulation layer comprises a first encapsulation portion and a second encapsulation portion, the first encapsulation portion covering the driving backplane, the second encapsulation portion encapsulating the light-emitting device and exposing at least a portion of a side of the light-emitting stack away from the first electrode; The second electrode layer is arranged on the side of the first packaging layer away from the driving backplane and is in direct contact with the first packaging layer; the second electrode layer includes a first conductive part and a second conductive part, the first conductive part is located on the surface of the first packaging part away from the driving backplane, and is connected to the first pad or the second pad; the second conductive part covers the second packaging part and is connected to the exposed part of the light-emitting device; wherein, at the groove, there is an air gap between the second electrode layer and the first electrode.

2. The light-emitting substrate according to claim 1, wherein The second encapsulation portion includes a first sub-portion, a second sub-portion, and a third sub-portion connected in sequence; the first sub-portion is located on a side of the light-emitting stack layer away from the driving backplane, the second sub-portion covers the sidewall of the light-emitting stack layer and a side close to the driving backplane, and the third sub-portion covers the sidewall of the first electrode; The first packaging portion is connected to the third sub-portion and has a gap between the first packaging portion and the second sub-portion; the second conductive portion and the third sub-portion have the air gap.

3. The light-emitting substrate according to claim 2, wherein: A ratio of a maximum thickness of the first encapsulation layer to a thickness of the first electrode is greater than or equal to 0.5 and less than 1.

25.

4. The light-emitting substrate according to claim 2, wherein The maximum thickness of the second electrode layer is greater than or equal to a first distance; the first distance is the distance between the second sub-portion and the first packaging portion.

5. The light-emitting substrate according to claim 4, characterized in that The maximum thickness of the second electrode layer is greater than or equal to 0.3 μm.

6. The light-emitting substrate according to claim 2, wherein: The material of the second electrode layer includes indium zinc oxide.

7. The light-emitting substrate according to claim 1, wherein The second encapsulation portion includes a first sub-portion, a second sub-portion, and a third sub-portion connected in sequence; the first sub-portion is located on a side of the light-emitting stack layer away from the driving backplane, the second sub-portion covers the sidewall of the light-emitting stack layer and a side close to the driving backplane, and the third sub-portion covers the sidewall of the first electrode; The first packaging portion is connected to the third sub-portion and also connected to the second sub-portion; and the air gap is located between the first packaging portion, the second sub-portion, and the third sub-portion.

8. The light-emitting substrate according to claim 7, wherein: A ratio of a maximum thickness of the first encapsulation layer to a thickness of the first electrode is greater than or equal to 1.

25.

9. The light-emitting substrate according to claim 7, wherein: The maximum thickness of the second electrode layer is 0.07 μm to 0.1 μm.

10. The light emitting substrate according to claim 6, wherein The material of the second electrode layer includes indium zinc oxide and / or indium tin oxide.

11. The light emitting substrate according to any one of claims 1 to 10, characterized in that The plurality of light-emitting devices include a first light-emitting device and a second light-emitting device, a first pad directly connected to the first electrode of the second light-emitting device is a target pad, and the first encapsulation portion exposes at least a portion of the target pad; The second electrode layer includes a first connecting electrode and a second connecting electrode spaced apart from each other, one end of the first connecting electrode being directly connected to the exposed portion of the first light emitting device, and the other end being directly connected to the second pad; One end of the second connecting electrode is directly connected to the exposed portion of the first light-emitting device, and the other end is directly connected to the exposed portion of the target pad corresponding to one of the second light-emitting devices; or, one end of the second connecting electrode is directly connected to the exposed portion of one of the second light-emitting devices, and the other end is directly connected to the exposed portion of the target pad corresponding to another second light-emitting device.

12. The light emitting substrate according to any one of claims 1 to 10, wherein The transmittance of the second conductive portion is greater than or equal to 80%; and / or the transmittance of the second packaging portion is greater than or equal to 90%.

13. The light emitting substrate according to any one of claims 1 to 10, characterized in that The maximum thickness of the first encapsulation layer is greater than or equal to 0.3 μm.

14. A display device, characterized in that: include: The light-emitting substrate according to any one of claims 1 to 13; A housing is provided in which the light emitting substrate is arranged.

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