Ion implanter

Abstract

The utility model discloses an ion implanter, and relates to the technical field of semiconductor manufacturing, and the ion implanter comprises a wafer stage and a mechanical arm. An alignment table; an airlock table; a V-shaped arm; clamping points are arranged on the two sides of the target disc; groove-shaped structures are arranged on the left side and the right side of the target disc, alignment marks of wafers are arranged on the surface of the target disc, it is ensured that the wafers are tightly attached to the surface of the target disc during rotation through vacuum adsorption points, displacement caused by centrifugal force during rotation is avoided, and the groove-shaped structures on the two sides of the target disc provide a stable operation path for wafer conveying of the V-shaped arm. According to the ion implanter, the edge of the wafer is further fixed through the clamping points, the wafer is prevented from shaking in the wafer moving process, the alignment marks ensure that the wafer is accurately positioned, the problem that the position is deviated due to the fact that the wafer shakes when a 6-inch wafer is produced by an existing ion implanter is solved, and the production efficiency of the ion implanter is improved. The ion implanter can prevent the wafer from shaking when producing a 6-inch wafer, and avoids position displacement.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to an ion implanter. Background Art

[0002] With the continuous development of semiconductor manufacturing technology, ion implanters play a vital role in the wafer manufacturing process. Ion implantation technology can precisely control the concentration and distribution of dopants and is a key step in manufacturing high-performance semiconductor devices. Existing ion implantation equipment has certain limitations in its flexibility in supporting wafers of different sizes, especially its weak support for 6-inch wafers.

[0003] The mainstream ion implantation equipment currently on the market, such as the Nissin ion implanter model 2300AH, mainly supports the process processing of 8-inch and 12-inch silicon wafers. These devices were optimized for large-size wafers at the beginning of their design and are widely used in large-scale, high-precision semiconductor manufacturing processes. However, due to design and process limitations, the Nissin ion implanter model 2300AH has not yet taken into account the processing requirements of 6-inch wafers. When manufacturing 6-inch wafers, the wafers are prone to shaking during rotation, causing position shifting.

[0004] Therefore, we need an ion implanter to solve the problem that the existing ion implanter causes the wafer to shake and cause position displacement when producing 6-inch wafers. The ion implanter can prevent the wafer from shaking and position displacement when producing 6-inch wafers. Utility Model Content

[0005] The purpose of this application is to solve the problem that the existing ion implanter causes the wafer to shake when producing 6-inch wafers, resulting in position displacement. In order to solve the above problem, this application provides an ion implanter that can prevent the wafer from shaking and position displacement when producing 6-inch wafers.

[0006] To achieve the above-mentioned purpose, the embodiments of the present application adopt the following technical solutions: a wafer carrier, which is located at the starting point of the conveying system; a robotic arm, which is movably connected to the wafer carrier, and is used in conjunction with the wafer carrier; an alignment stage, which is connected to one end of the robotic arm; an air lock stage, which is connected to the other end of the robotic arm; a V-shaped arm, which is connected to the air lock stage, and is used to transfer the wafer to the target disk; the target disk is connected to a rotation drive system, and a plurality of vacuum adsorption points are provided in the central area of ​​the target disk, which are used to fix the wafer, and an alignment mark with the wafer is provided on the surface of the target disk; a groove structure is provided on the left and right sides of the target disk, which is used to provide a path for the V-shaped arm, and clamping points are provided on both sides of the V-shaped arm, which are fixed to the edge of the wafer.

[0007] In the above technical solution, the embodiment of the present application solves the problem of unstable wafer position when producing 6-inch wafers in the existing ion implanter by setting multiple vacuum adsorption points suitable for 6-inch wafers and clamping points and alignment marks on both sides in the central area of ​​the target plate, so that the ion implanter can prevent the wafer from shifting when producing 6-inch wafers.

[0008] Furthermore, according to an embodiment of the present application, a cooling device is provided in the middle of the target plate.

[0009] Furthermore, according to an embodiment of the present application, the target disk diameter is smaller than the wafer diameter.

[0010] Furthermore, according to an embodiment of the present application, the groove structure is located on both sides of the target plate and matches the gripping structure of the V-shaped arm.

[0011] Furthermore, according to an embodiment of the present application, the target plate is connected to the rotation drive system by a mechanical fixing method, and the mechanical fixing method includes a plurality of evenly distributed fixing points.

[0012] Further, according to an embodiment of the present application, the alignment marks are provided in the center and edge areas of the target disk.

[0013] Furthermore, according to an embodiment of the present application, the target plate's vacuum adsorption points, clamping points, alignment marks, and groove structures are all made of antistatic materials.

[0014] Furthermore, according to an embodiment of the present application, the rotation drive system is controlled by a high-precision servo motor.

[0015] Furthermore, according to an embodiment of the present application, wafers are transferred between the target plate and the air lock stage via a V-shaped arm.

[0016] Compared with the existing technology, the present application has the following beneficial effects: the vacuum adsorption points are used to ensure that the wafer is tightly attached to the target disk surface during rotation, avoiding displacement caused by centrifugal force during rotation; the groove structure on both sides of the target disk provides a stable operating path for the V-arm wafer transfer, ensuring a smooth and correct transfer process; the clamping points further fix the edge of the wafer, preventing the wafer from shaking during wafer movement; the alignment marks ensure accurate wafer positioning, and solve the problem of wafer shaking and position displacement caused by the existing ion implantation machine when producing 6-inch wafers. The ion implantation machine can prevent the wafer from shaking and position displacement when producing 6-inch wafers. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present application is further described below with reference to the accompanying drawings and examples.

[0018] Figure 1 It is an axonometric view of an ion implanter.

[0019] Figure 2 This is a front view of an ion implanter.

[0020] Figure 3 This is a top view of an ion implanter.

[0021] Figure 4 This is an axonometric view of the target.

[0022] Figure 5 This is a top view of the target plate.

[0023] Figure 6 is a top view of the clamping point.

[0024] Figure 7 yes Figure 6 "AA" section view of the .

[0025] Figure 8 yes Figure 6 "AA" section view of the improved clamping point.

[0026] In the attached figure

[0027] 1. Wafer stage 2. Robotic arm 3. Alignment stage

[0028] 4. Air lock platform 5. V-shaped arm 51. Clamping point

[0029] 511, clamping arm 512, clamping head 513, elastic adjustment mechanism

[0030] 6. Target plate 61, vacuum adsorption point 62, cooling device

[0031] 63. Groove structure 64. Alignment mark 7. Wafer DETAILED DESCRIPTION

[0032] In order to clearly and completely describe the purpose and technical solution of the present invention and make its advantages more clearly understood, the following is a further detailed description of the embodiments of the present invention in conjunction with the accompanying drawings. It should be understood that the specific embodiments described herein are only part of the embodiments of the present invention, not all of them, and are only used to explain the embodiments of the present invention and are not intended to limit the embodiments of the present invention. All other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0033] In the description of the present invention, it should be noted that the terms "center," "middle," "upper," "lower," "left," "right," "inner," "outer," "top," "bottom," "side," "vertical," "horizontal," and the like, indicating positions or location relationships, are based on the positions or location relationships shown in the accompanying drawings and are intended only to facilitate the description of the present invention and simplify the description. They are not intended to indicate or imply that the devices or components referred to must have a specific orientation, be constructed, or operate in a specific orientation. Therefore, they should not be construed as limiting the present invention. Furthermore, the terms "one," "first," "second," "third," "fourth," "fifth," and "sixth" are used for descriptive purposes only and should not be construed as indicating or implying relative importance.

[0034] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," and "connected" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integral connections; mechanical connections, electrical connections; direct connections, indirect connections through an intermediate medium, and internal communication between two components. Those skilled in the art will understand the specific meanings of the above terms in this utility model based on the specific circumstances.

[0035] For the purposes of simplicity and illustration, the principles of the embodiments are described primarily with reference to examples. In the following description, many specific details are provided to provide a thorough understanding of the embodiments. However, it will be apparent to those skilled in the art that the embodiments may not be limited to these specific details in practice. In some instances, well-known methods and apparatus are not described in detail to avoid unnecessarily obscuring the embodiments. In addition, all embodiments may be used in combination with each other.

[0036] Example 1: Figure 1-5 As shown, an ion implanter comprises:

[0037] The wafer stage 1 is located at the starting point of the conveying system and is used to store the 6-inch wafer 7 to be processed and transport the wafer 7 to the next processing stage through the conveying system;

[0038] The robot arm 2 cooperates with the wafer stage 1 to transfer the wafer 7 from the wafer stage 1 to the alignment stage 3 through the control system for subsequent wafer 7 transfer operations;

[0039] The alignment stage 3 is connected to the robot arm 2 and is used to accurately position the wafer 7 before it is transferred to the target plate 6 to ensure that the wafer 7 is consistent with the ion implantation direction and improve the implantation accuracy;

[0040] The air lock 4 is connected to the robot arm 2 and switches between the atmospheric environment and the vacuum environment through the air pressure conversion function to ensure that the wafer 7 completes the air pressure balance before being transferred to the target plate 6 to prevent contamination and damage;

[0041] The V-shaped arm 5 is connected to the air lock stage 4 and is used to transfer the wafer 7 from the air lock stage 4 to the target plate 6. The design of the V-shaped arm 5 ensures the stability and precise alignment of the wafer 7 during the transfer process.

[0042] The target plate 6 is connected to a rotation drive system, which is used to fix and rotate the 6-inch wafer 7 during the ion implantation process. The target plate 6 has vacuum adsorption points 61 located in the central area of ​​the target plate 6. Multiple adsorption points are evenly distributed, and the wafer 7 is firmly fixed to the surface of the target plate 6 through vacuum adsorption, ensuring that the wafer 7 does not shift during rotation.

[0043] Clamping points 51 are provided on both sides of the V-shaped arm 5 , and the clamping points 51 cooperate with the edge of the wafer 7 to provide further fixing effect, thereby preventing the wafer 7 from deflecting due to shaking during movement.

[0044] A cooling device 62 is provided in the middle of the target plate 6 for cooling the target plate 6 during the ion implantation process. The cooling device 62 includes a cooling liquid channel through which the cooling liquid circulates to reduce the temperature of the target plate 6 and prevent the wafer 7 from deformation or thermal stress due to excessive temperature.

[0045] The left and right sides of the target plate 6 are provided with groove structures 63 for providing an operating path for the V-shaped arm 5 to ensure that the V-shaped arm 5 can smoothly transfer and retrieve the wafer 7 and prevent the wafer 7 from being bumped or scratched during the transfer process.

[0046] The alignment marks 64 of the target disk 6 are arranged at the center and edge areas of the target disk 6 to ensure that the wafer 7 is accurately aligned on the target disk 6 and to ensure precise positioning during the ion implantation process.

[0047] The target disk 6 is connected to the rotation drive system through a mechanical fixing method. The mechanical fixing method includes multiple evenly distributed fixing points to ensure that the target disk 6 remains stable during high-speed rotation without any mechanical deviation. The rotation drive system is controlled by a high-precision servo motor and can adjust the rotation speed according to demand, thereby ensuring that the ion beam evenly covers the surface of the wafer 7.

[0048] The vacuum adsorption points 61 , the clamping points 51 , the alignment marks 64 and the groove structures 63 of the target plate 6 are all made of antistatic materials to prevent damage caused by static electricity accumulation during the transfer and fixation of the wafer 7 .

[0049] Specifically, the alignment mark 64 is set within a radius of 70-55 mm of the target plate 6 , which is suitable for implantation measurement of a 6-inch wafer 7 .

[0050] The wafer 7 is fixed by the vacuum adsorption point 61, combined with the fixed transmission of the clamping point 51 of the V-arm 5, so that the wafer 7 remains stable during the rotation process and avoids displacement, thereby solving the problem of unstable position of the wafer 7 when the existing ion implanter produces 6-inch wafers 7, and enabling the ion implanter to prevent the wafer 7 from displacement when producing 6-inch wafers 7.

[0051] Example 2: Figure 6-8 As shown, based on the first embodiment, this embodiment further improves the clamping point 51, including:

[0052] A clamping arm 511; one end of the clamping arm 511 is fixed to the V-shaped arm 5, and the other end is provided with a clamping head 512 that can gently contact the wafer 7;

[0053] Between the clamping arm 511 and the clamping head 512, an elastic adjustment mechanism 513 is provided to enable the clamping point 51 to adapt to the changes in the edge of the wafer 7 and adjust the contact pressure;

[0054] By adjusting the angle of the clamping point 51, it can adapt to 6-inch wafers 7 of different thicknesses and edge shapes, ensuring that the clamping point 51 always maintains the best contact angle with the edge of the wafer 7 during movement, avoiding displacement of the wafer 7 due to uneven pressure or looseness.

[0055] Example 3: Figure 1-8 As shown, based on the embodiment 1-2, this embodiment further provides a method for using an ion implanter, comprising: placing the wafer 7 to be processed on the wafer stage 1, and the conveying system automatically senses the presence of the wafer 7;

[0056] The wafer 7 is transferred from the wafer stage 1 to the alignment stage 3 by the robot arm 2;

[0057] The wafer 7 is aligned on the alignment stage 3. After alignment is completed, the robot arm 2 transfers the wafer 7 from the alignment stage 3 to the air lock stage 4.

[0058] Performing air pressure conversion on the air lock stage 4 to switch the atmospheric environment to a vacuum environment to meet the process requirements of ion implantation;

[0059] After the gas pressure conversion is completed, the V-shaped arm will transfer the wafer 7 from the gas lock table 4 to the target plate 6;

[0060] The wafer 7 is placed on the target plate 6 and fixed at the center of the target plate 6 by the vacuum adsorption point 61 of the target plate 6 to ensure that the wafer 7 remains stable during the entire ion implantation process.

[0061] The target disk 6 starts to rotate to ensure that the ion beam evenly covers the surface of the wafer 7 to achieve accurate ion implantation;

[0062] After the implantation is completed, the V-shaped arm will take the wafer 7 out of the target plate 6 and put it back into the air lock stage 4. The air lock stage 4 will restore the air pressure and convert the vacuum environment back to the atmospheric environment.

[0063] The robotic arm 2 transfers the processed wafer 7 from the air lock 4 back to the wafer carrier 1 to complete the entire ion implantation process;

[0064] After the ion implantation is completed for each wafer 7, the entire process will repeat the above steps until all the wafers 7 are processed.

[0065] Although the above describes the illustrative specific implementation methods of the present application so that those skilled in the art can understand the present application, the present application is not limited to the scope of the specific implementation methods. For those of ordinary skill in the art, as long as various changes are within the spirit and scope of the present application defined and determined by the attached claims, all application creations based on the concept of the present application are protected.

Claims

1. An ion implanter, comprising: A wafer stage, the wafer stage being located at the starting point of the conveying system; A robotic arm, the robotic arm being movably connected to the wafer stage and used in conjunction with the wafer stage; an alignment stage connected to one end of the robotic arm; an air lock platform connected to the other end of the robotic arm; A V-shaped arm, the V-shaped arm is connected to the air lock platform, and the V-shaped arm is used to transfer the wafer to the target plate; It is characterized by: The target plate is connected to a rotation drive system, a plurality of vacuum adsorption points are provided in the central area of ​​the target plate, the vacuum adsorption points are used to fix the wafer, and an alignment mark with the wafer is provided on the surface of the target plate; The left and right sides of the target plate are provided with groove structures for providing a path for the V-shaped arm. Clamping points are provided on both sides of the V-shaped arm, and the clamping points are fixed to the edge of the wafer.

2. An ion implanter according to claim 1, characterized in that: A cooling device is provided in the middle of the target plate.

3. An ion implanter according to claim 1, characterized in that: The target disk has a diameter smaller than the wafer diameter.

4. The ion implanter according to claim 1, wherein: The groove structure is located on both sides of the target plate and matches the grasping structure of the V-shaped arm.

5. The ion implanter according to claim 1, characterized in that: The target plate is connected to the rotation drive system by a mechanical fixing method, and the mechanical fixing method includes a plurality of evenly distributed fixing points.

6. The ion implanter according to claim 1, characterized in that: The alignment marks are arranged at the center and edge areas of the target disk.

7. The ion implanter according to claim 1, characterized in that: The vacuum adsorption points, the clamping points, the alignment marks and the groove structure of the target plate are all made of antistatic materials.

8. The ion implanter according to claim 1, characterized in that: The rotation drive system is controlled by a servo motor.

9. The ion implanter according to claim 1, characterized in that: Wafers are transferred between the target plate and the air lock platform via the V-shaped arm.

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