Material feeding device

Abstract

The embodiment of the utility model provides a material feeding device which comprises a storage tank used for storing a liquid material and feeding carrier gas into the liquid material through a gas inlet port of the storage tank to generate a droplet-shaped material, and the droplet-shaped material carried by the carrier gas is discharged through a gas outlet port of the storage tank; the crushing device is positioned between the storage tank and the reaction chamber; the crushing device comprises a pipe body and a crushing part located in the pipe body and arranged in the extending direction of the pipe body. The crushing part is used for crushing liquid drop-shaped materials carried by the carrier gas introduced into the gas inlet port of the crushing device, and the crushed liquid drop-shaped materials carried by the carrier gas are discharged through the gas outlet port of the crushing device.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to, but not limited to, a material feeding device. Background Art

[0002] Furnace oxidation processes are widely used in the chip manufacturing industry due to their low cost and scalability. However, current oxidation processes, such as dichloroethylene (DCE) (C2H2Cl2), often result in a high number of spherical defects on wafers. This significantly impacts subsequent manufacturing processes and ultimately affects wafer quality. Reducing these defects is crucial to improve the DCE oxidation process and ensure wafer yield in subsequent processes. Utility Model Content

[0003] In view of this, an embodiment of the present application provides a material introduction device, which includes: a storage tank, used to store liquid material, and used to introduce a carrier gas into the liquid material through the air inlet port of the storage tank to produce droplet-shaped material, and the droplet-shaped material carried by the carrier gas is discharged through the air outlet port of the storage tank; a crushing device, located between the storage tank and the reaction chamber; the crushing device includes a tube body, and a crushing component located in the tube body and arranged along the extension direction of the tube body; the crushing component is used to crush the droplet-shaped material carried by the carrier gas introduced into the air inlet port of the crushing device, and the droplet-shaped material carried by the carrier gas after crushing is discharged through the air outlet port of the crushing device.

[0004] In some embodiments, the crushing component includes multiple crushing holes with a preset aperture and a preset number; within the unit cross-sectional area of ​​the tube body, the preset number is negatively correlated with the preset aperture; the droplet-shaped material carried by the carrier gas after crushing has a flow rate, and the preset aperture is positively correlated with the flow rate.

[0005] In some embodiments, the crushing component includes a plurality of crushing layers with a first preset aperture located in the tube body and arranged in series along the extension direction of the tube body; the crushing layers include a plurality of crushing holes.

[0006] In some embodiments, the multiple crushing layers include a first crushing layer and a second crushing layer; the first crushing layer is close to the air inlet port of the crushing device, and the second crushing layer is close to the air outlet port of the crushing device; wherein the first preset aperture of the first crushing layer is larger than the first preset aperture of the second crushing layer.

[0007] In some embodiments, the droplet-shaped material carried by the carrier gas after being crushed has a first flow rate ranging from 0 to 300 sccm; the first preset pore size ranges from 0.1 μm to 10 μm; and the inner diameter of the tube body ranges from 5 mm to 20 mm.

[0008] In some embodiments, the crushing component includes a plurality of crushing tubes with a second preset aperture located in the tube body and arranged in parallel along the extension direction of the tube body; the crushing tubes are connected to at least one crushing hole.

[0009] In some embodiments, the crushing tube includes a first end and a second end; the first end is close to the air inlet port of the crushing device, and the second end is close to the air outlet port of the crushing device; wherein the second preset aperture of the first end is larger than the second preset aperture of the second end.

[0010] In some embodiments, the crushing tube is at least partially bent.

[0011] In some embodiments, the material introduction device further includes: a liquid delivery system connected to the liquid replenishment port of the storage tank, for introducing liquid material into the storage tank; and a filter located between the liquid delivery system and the storage tank, for filtering the liquid material introduced into the storage tank.

[0012] In some embodiments, the material introduction device includes a plurality of crushing devices; the plurality of crushing devices are arranged in series or in parallel between the storage tank and the reaction chamber.

[0013] In each embodiment of the present application, a crushing component is added to the material introduction device before entering the reaction chamber. The crushing component is used to crush the droplet-shaped material carried by the carrier gas, reduce the number / volume of large droplets of material in the droplet-shaped material carried by the carrier gas, and make the material entering the reaction chamber completely vaporized, reducing or eliminating the residual material droplets after incomplete vaporization of a very small number of large material droplets in the reaction chamber, resulting in spherical defects in the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 Schematic diagram of a material inlet pipeline of a reaction chamber in the related art;

[0015] Figure 2 This is a schematic diagram of the DCE oxidation reaction in the DCE oxidation process;

[0016] Figure 3 This is a microscopic diagram of the air flow in the gas pipe before entering the furnace tube;

[0017] Figure 4 This is a microscopic diagram of the airflow before and after entering the pre-reaction chamber of the furnace tube;

[0018] Figure 5 This is a microscopic diagram of the airflow in the reaction chamber entering the furnace tube;

[0019] Figure 6 A schematic diagram of a material feeding device provided in an embodiment of the present application;

[0020] Figure 7AA schematic diagram of a crushing device with one crushing layer provided in an embodiment of the present application;

[0021] Figure 7B A schematic diagram of a crushing device with multiple crushing layers provided in an embodiment of the present application;

[0022] Figure 8 Schematic diagram of the cross-sectional shapes of some crushed layers provided in the embodiments of the present application;

[0023] Figure 9 One of the schematic diagrams of a crushing device with multiple crushing tubes provided in an embodiment of the present application;

[0024] Figure 10A The second schematic diagram of a crushing device with multiple crushing tubes provided in an embodiment of the present application;

[0025] Figure 10B The third schematic diagram of a crushing device with multiple crushing tubes provided in an embodiment of the present application;

[0026] Figure 10C A fourth schematic diagram of a crushing device with multiple crushing tubes provided in an embodiment of the present application;

[0027] Figure 11 This is a microscopic diagram of the air flow in the gas duct before entering the furnace tube according to an embodiment of the present application;

[0028] Figure 12 This is a microscopic diagram of the front and rear airflows entering the pre-reaction chamber of the furnace tube according to an embodiment of the present application;

[0029] Figure 13 This is a microscopic diagram of the airflow entering the reaction chamber of the furnace tube according to an embodiment of the present application. DETAILED DESCRIPTION

[0030] The following will be combined with the embodiments of this application and the accompanying drawings to clearly and completely describe the technical solutions in the embodiments of this application. The described embodiments are only part of the embodiments of this application, not all of the embodiments. Based on the embodiments of this application, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of this application.

[0031] In the drawings, the sizes of layers, regions, elements and their relative sizes may be exaggerated for clarity. Like reference numerals denote like elements throughout.

[0032] It should be understood that when an element or layer is referred to as being "on," "adjacent to," "connected to," or "coupled to" another element or layer, it may be directly on, adjacent to, connected to, or coupled to the other element or layer, or there may be intervening elements or layers. Conversely, when an element is referred to as being "directly on," "directly adjacent to," "directly connected to," or "directly coupled to" another element or layer, there may be no intervening elements or layers. It should be understood that although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, and / or parts, these elements, components, regions, layers, and / or parts should not be limited by these terms. These terms are merely used to distinguish one element, component, region, layer, or part from another element, component, region, layer, or part. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, or part discussed below may be represented as a second element, component, region, layer, or part. And when the second element, component, region, layer, or part is discussed, it does not necessarily mean that the first element, component, region, layer, or part is present in the present application.

[0033] Spatially relative terms such as "under," "beneath," "below," "under," "above," "above," etc., may be used herein for convenience of description to describe the relationship of an element or feature shown in the figures to other elements or features. It should be understood that in addition to the orientations shown in the figures, the spatially relative terms are intended to include different orientations of the device in use and operation. For example, if the device in the drawings is flipped, then the elements or features described as "under the other elements" or "under it" or "under it" will be oriented as "on" the other elements or features. Thus, the exemplary terms "under" and "under" may include both upper and lower orientations. The device may be oriented otherwise (rotated 90 degrees or in other orientations) and the spatial descriptors used herein are interpreted accordingly.

[0034] It should be noted that, unless otherwise specified, components / layers / materials / structures, etc. identified by the same reference numerals in the following drawings are to be understood as the same or similar components / layers / materials / structures.

[0035] It should be noted that, in the following specific description, the reaction chamber may be the reaction chamber of a furnace tube oxidation machine, and the material is DCE as an example for detailed description, but the following specific description is not intended to limit the embodiments of the present application.

[0036] Figure 1 Schematic diagram of the material inlet pipeline of the reaction chamber in the related art.

[0037] refer to Figure 1The furnace tube oxidation machine implements the DCE oxidation process. During the DCE oxidation step, an oxidizing gas (e.g., oxygen (O2)) and DCE (gaseous, with the chemical formula C2H2Cl2) are introduced into the furnace tube, and the following reaction occurs:

[0038] (1), C2H2Cl2(g)+2O2(g)→2CO2(g)+2HCl(g);

[0039] (2) HCl(g)+O2(g)→H2O(g)+Cl2(g) (produces water molecules, accelerating the oxidation rate);

[0040] (3) Na(s)+Cl2(g)→2NaCl(s) (solidifies metal ions such as sodium (Na) and improves the quality of the oxide film);

[0041] (4), Si(s)+O2(g)→SiO2(s);

[0042] (5), Si(s)+H2O(g)→SiO2(s)+H2(g).

[0043] Liquid DCE is stored in a 20°C tank and is bubbled out by a carrier gas (e.g., nitrogen (N2)). It is then heated in a pre-reaction chamber of the furnace tube (e.g., at a set temperature of 890°C / 900°C) before entering the reaction chamber of the furnace tube. It reacts at a reaction temperature (e.g., at a set temperature of 700°C) to form a dense oxide film (SiO2).

[0044] Figure 2 This is the schematic diagram of the DCE oxidation reaction in the DCE oxidation process.

[0045] refer to Figure 2 DCE oxidation is a chlorine-doped oxidation, which plays the role of providing chloride ions in the oxidation process. As a catalyst in the reaction, it has the function of generating water molecules to accelerate oxidation and take away metal ions (such as sodium (Na) ions) to improve the quality of the oxide film.

[0046] The overall equation of the above reaction formula (1) to reaction formula (5) is:

[0047] (6), Si(s)+O2(g)→SiO2(s).

[0048] DCE is trans-dichloroethylene with the chemical formula C2H2Cl2. It is slightly soluble in water and miscible with various organic solvents such as ethanol and ether. Its boiling point is between 48°C and 60°C. It is chemically unstable, flammable, explosive, and volatile. It decomposes easily when exposed to light or heat. Its proportion in air should be less than 9% and its proportion in oxygen should be less than 5.5%.

[0049] When storing DCE, in order to prevent concentration, crystallization and decomposition, it should be stored at a low temperature of 20°C. Figure 1 In the illustrated DCE oxidation process, a carrier gas (e.g., nitrogen) is introduced into the furnace tube via a bubbling method. Before the DCE oxidation reaction begins, an oxidizing gas (e.g., oxygen) is introduced into the furnace tube's reaction chamber to purge the pre-reaction chamber and reaction chamber to prevent carbonization and decomposition of DCE. Furthermore, the DCE is not heated for a long time while flowing through the pipeline and pre-reaction chamber. Therefore, the physical state of the DCE changes within the pipeline, the pre-reaction chamber, and the reaction chamber, affecting the formation of an oxide film.

[0050] Figure 3 This is a microscopic diagram of the airflow in the gas pipe before entering the furnace tube. Figure 4 This is a microscopic diagram of the airflow before and after entering the pre-reaction chamber of the furnace tube. Figure 5 This is a microscopic diagram of the airflow entering the reaction chamber of the furnace tube.

[0051] The physical state of DCE changes in the pipe before entering the furnace tube, the pre-reaction chamber of the furnace tube, and the reaction chamber of the furnace tube are analyzed as follows: Figure 3 、 Figure 4 and Figure 5 The specific process analysis is as follows:

[0052] refer to Figure 3 Before entering the furnace tube, the liquid DCE droplets are carried by a carrier gas (e.g., nitrogen) in the pipeline. Due to vapor pressure, the liquid molecules in the droplets are accelerated, and a small portion of the droplets evaporate into a gaseous state. The droplets of DCE carried by the carrier gas include small DCE droplets and large DCE droplets, with the volume of the large DCE droplets being larger than that of the small DCE droplets. It should be noted that, for example, the fluid in the pipeline may include nitrogen, droplets of DCE carried by nitrogen, and gaseous DCE carried by nitrogen. The gaseous DCE carried by nitrogen accounts for a small portion of the total amount of DCE carried by nitrogen, and the upper limit of the gaseous DCE carried by nitrogen is limited by the saturated vapor pressure of DCE.

[0053] refer to Figure 4 DCE droplets are carried by a carrier gas (e.g., nitrogen) into the pre-reaction chamber of the furnace tube. The pre-reaction chamber is heated briefly, for example, at 890°C, vaporizing some of the large and small DCE droplets. For example, most of the large and small DCE droplets carried by the nitrogen gas are vaporized.

[0054] refer to Figure 5After entering the reaction chamber of the furnace tube, most of the large and small DCE droplets are heated to 700°C, for example, and are vaporized to react with oxygen. However, since vaporization requires absorbing heat, the airflow distribution in the reaction chamber of the furnace tube is not absolutely uniform, resulting in uneven heat transfer. During the reaction time, a very small number of large DCE droplets do not have time to vaporize and participate in the reaction, resulting in DCE droplets remaining on the oxide film of the wafer, resulting in spherical defects, which have a significant impact on subsequent process technology.

[0055] The terms "very small portion", "a small portion", "a portion", "most portion" and "the vast majority" herein represent different levels of content proportions. For example, when used to represent the proportion of a portion of droplet-shaped DCE to the whole, the proportion relationship is: the proportion of the very small portion of droplet-shaped DCE < the proportion of the small portion of droplet-shaped DCE < the proportion of the portion of droplet-shaped DCE < the proportion of the vast majority of droplet-shaped DCE.

[0056] It should be noted that, ideally, both large and small DCE droplets need to be completely vaporized before reacting with oxygen to form an oxide film that meets the process requirements. However, a very small number of small DCE droplets may not have time to vaporize and participate in the reaction. In this case, it can be assumed that spherical defects will not occur or that spherical defects will not occur within the allowable range of process error.

[0057] The bubbling method involves introducing a carrier gas (e.g., nitrogen) into a liquid storage tank, transporting both the carrier gas and the carried gas (e.g., DCE droplets) together. As the carrier gas enters the liquid tank, bubbles are generated, carrying the liquid with it. Due to the decreasing concentration within the liquid storage tank and the uneven flow rate of the carrier gas entering the liquid, the size of the bubbles generated and the amount of liquid adsorbed vary. This results in droplets of varying sizes (e.g., the large and small DCE droplets mentioned above) upon bubble collapse.

[0058] According to Laplace equation ΔP max =2γ / r (or γ=(r / 2)ΔP max ), where ΔP max represents the maximum bubble retraction force, γ represents the bubble surface tension, and r represents the bubble radius; the bubble retraction force is proportional to the surface tension and inversely proportional to the bubble radius. The size of the bulging bubble is related to the surface tension of the bubble and the external atmospheric pressure. Changes in surface tension will cause the radius of the bubble to change. According to common sense in fluid mechanics, the movement of fluid in a pipe is caused by pressure difference. Due to factors such as pipe resistance, the flow velocity distribution in the pipe is generally large in the middle and slow at the edge. According to Bernoulli's equation, the greater the flow velocity, the lower the pressure, which will affect the change in the surface tension of the bubbles entering the tank, that is, the difference in droplet size.

[0059] Through relevant composition and theoretical analysis of spherical defects, the causes include incomplete DCE vaporization. For example, a small number of large DCE droplets are not completely vaporized and react with oxygen in liquid form, resulting in residual DCE droplets, which cause spherical defects on the wafer.

[0060] Figure 6 This is a schematic diagram of a material introduction device provided in an embodiment of the present application.

[0061] The present application embodiment provides a material feeding device, referring to Figure 6 The material introduction device includes: a storage tank, which is used to store liquid materials and to introduce carrier gas into the liquid materials through the air inlet port of the storage tank to produce droplet-shaped materials, and the droplet-shaped materials carried by the carrier gas are discharged through the air outlet port of the storage tank; a crushing device, which is located between the storage tank and the reaction chamber; the crushing device includes a tube body, and a crushing component located in the tube body and arranged along the extension direction of the tube body; the crushing component is used to crush the droplet-shaped materials carried by the carrier gas introduced into the air inlet port of the crushing device, and the droplet-shaped materials carried by the carrier gas after crushing are discharged through the air outlet port of the crushing device.

[0062] It should be noted that the crushing device is located in the tube body, which can be understood as at least part of the crushing device (the part where the crushing device is connected to the tube body) being located within the range covered by the inner diameter of the tube body, or it can be understood as the entire crushing device being located within the range covered by the inner diameter of the tube body.

[0063] The storage tank is used to store liquid DCE and to generate droplets of DCE that can be carried by carrier gas through the bubbling method. Figure 1 and Figure 2 The relevant description will not be repeated here.

[0064] refer to Figure 6 In some embodiments, the material inlet device further includes: a first valve located between the storage tank and the crushing device's air inlet port; and a second valve located between the crushing device's air outlet port and the reaction chamber. The first valve is used to open or close the pipeline between the storage tank and the crushing device, while the second valve is used to open or close the pipeline between the crushing device and the furnace pipe, facilitating removal, installation, and inspection of the crushing device. Exemplarily, the first and second valves comprise vacuum pressure valves.

[0065] refer to Figure 6In some embodiments, the material introduction device further includes: a liquid delivery system connected to the liquid replenishment port of the storage tank for introducing liquid material into the storage tank; and a filter located between the liquid delivery system and the storage tank for filtering the liquid material introduced into the storage tank. The liquid DCE is pre-filtered before entering the storage tank to remove impurities and improve the cleanliness of the liquid DCE after entering the storage tank.

[0066] The crushing device of the DCE feeding device is installed and checked, which exemplarily includes the following steps: step S101, select the model of the crushing device to be installed, and check whether the material quality is correct; step S102, turn off the automatic liquid replenishment of the liquid delivery system; and turn off the first valve and the second valve; step S103, remove the air pipe from the first valve to the second valve, and install the air pipe with the crushing device; step S104, draw back the DCE liquid in the front air pipe at the storage tank, cut off part of the air pipe and install the crushing device; step S105, maintain the pressure from the first valve to the second valve for 3 hours, and the pressure drop is less than 1% / 2 hours; step S106: Nitrogen gas was introduced into the pipeline for a trial run, and no abnormalities were observed during the trial run. A pH test paper was placed at the connection between the crushing device, the first valve, and the second valve. Step S107: Gaseous DCE was introduced into the gas pipeline at set flow rates, including 0.05 L / min for 5 minutes, 0.1 L / min for 10 minutes, 0.35 L / min for 10 minutes, and 0.7 L / min for 20 minutes. During the test run, the pH test paper was checked to see that it did not turn red, and the pH value was zero using a hydrochloric acid tester. No leakage was observed in the gas pipeline, and the crushing device was installed. For a detailed description of the crushing device model (which can be understood as the specific configuration of the crushing device), please refer to the details of the following embodiments.

[0067] In each embodiment of the present application, the first direction, the second direction and the third direction are orthogonal to each other. For example, the first direction is represented by the X direction in the drawings; the second direction is represented by the Y direction in the drawings, and the third direction is represented by the Z direction in the drawings. In some drawings, the third direction can be understood as the direction of fluid flow in each element, component, or structure. In some drawings, the plane where the first direction and the second direction are located is a horizontal plane, and the third direction is a vertical direction perpendicular to the horizontal plane. It should be noted that Figure 7B (a) does not show the crushing hole, Figure 7B (b) shows the crushing hole. Figure 7B (b) Figure 7B (a) A schematic diagram of a broken layer; similar situations include Figure 9 、 Figure 10A 、 Figure 10B 、 Figure 10C ,For example, Figure 10A (b) Figure 10A (a) Schematic diagram of a linear crushing tube.

[0068] In some embodiments, the crushing component includes multiple crushing holes with a preset aperture and a preset number; within the unit cross-sectional area of ​​the tube body, the preset number is negatively correlated with the preset aperture; the droplet-shaped material carried by the carrier gas after crushing has a flow rate, and the preset aperture is positively correlated with the flow rate.

[0069] refer to Figure 7A and Figure 7B In some embodiments, the crushing component includes multiple crushing layers with a first predetermined aperture, located within the tubular body and arranged in series along the tubular body's extension direction; the crushing layers include multiple crushing holes. In the following description, the tubular body is defined as the first tubular body, and the multiple crushing layers are described in detail as being located within the first tubular body and arranged in series along the tubular body's extension direction. The multiple crushing layers being located within the first tubular body can be understood as all of the multiple crushing layers being located within the inner diameter of the first tubular body. For example, the multiple crushing layers can be fixed to the inner wall of the first tubular body.

[0070] In some embodiments, the multiple crushing holes have a first preset number and a first preset aperture. Within the unit cross-sectional area of ​​the first tube body, the first preset number is negatively correlated with the first preset aperture. The droplet-shaped material carried by the carrier gas after crushing has a first flow rate, and the first preset aperture is positively correlated with the first flow rate.

[0071] In some embodiments, a furnace tube oxidation machine requires a suitable first flow rate to implement the DCE oxidation process, and the specific structure of the crushing device, the relative installation position of the crushing device, etc. are all related to the first flow rate.

[0072] When the first flow rate is less than or equal to the first preset threshold, the droplet-shaped DCE carried by the carrier gas is insufficient to support the furnace tube oxidation machine to implement the DCE oxidation process; when the first flow rate is greater than the second preset threshold, there are undesirable large DCE droplets in the droplet-shaped DCE carried by the carrier gas. The undesirable large DCE droplets do not have time to vaporize in the furnace tube and participate in the DCE oxidation reaction, resulting in DCE droplets remaining on the oxide film of the wafer and spherical defects.

[0073] The first flow rate is related to the specific structure of the crushing device. For example, a greater number of crushing layers and a smaller crushing hole diameter result in a smaller first flow rate. The first flow rate is also related to the relative installation position of the crushing device. For example, a vertical placement of the crushing device relative to a horizontal placement of the crushing device results in a larger first flow rate. For another example, a horizontal placement of the crushing device relative to the top surface of the storage tank, the bottom surface or top surface of the crushing device, and the bottom surface of the air inlet port of the furnace pipe results in a larger first flow rate.

[0074] In some embodiments, a crushing layer (e.g. Figure 7A ).

[0075] In some embodiments, two crushing layers, three crushing layers, or more than three crushing layers can be arranged in series in the first tube. Figure 7B ) takes the three crushing layers arranged in series in the first tube as an example, and the example is not intended to limit the embodiments of the present application.

[0076] refer to Figure 7B In some embodiments, the multiple crushing layers include a first crushing layer and a second crushing layer; the first crushing layer is close to the air inlet port of the crushing device, and the second crushing layer is close to the air outlet port of the crushing device; wherein the first preset aperture of the first crushing layer is larger than the first preset aperture of the second crushing layer.

[0077] In some embodiments, the crushing effect of the multiple crushing layers (which can be understood as an obstruction to the fluid in the first tube body) gradually reduces the fluid flow in the extension direction of the first tube body. For example, the flow rate of the droplet-shaped DCE carried by the carrier gas passing through the first crushing layer is greater than the flow rate of the droplet-shaped DCE carried by the carrier gas passing through the second crushing layer. The aperture size of the crushing holes corresponding to the multiple crushing layers is set to decrease gradually in the extension direction of the first tube body, which can conform to the fluid flow in the first tube body and is conducive to crushing the droplet-shaped DCE carried by the carrier gas entering the crushing device to form droplet-shaped DCE carried by the carrier gas with a first flow rate.

[0078] refer to Figure 7B In some embodiments, the multiple crushing layers further include a third crushing layer located between the first crushing layer and the second crushing layer; the first crushing layer is close to the air inlet port of the crushing device, and the second crushing layer is close to the air outlet port of the crushing device; wherein the first preset aperture of the third crushing layer is located between the first preset aperture of the first crushing layer and the first preset aperture of the second crushing layer.

[0079] refer to Figure 8 The cross section of the fracture layer shown can be referred to Figure 7B (a) is an XZ section passing through the center of the first crushed layer, for example, Figure 8 The crushing holes are not shown in the cross-sections of the crushing layers shown. In some embodiments, the crushing holes can be through holes that penetrate the crushing layer; or the crushing layer can be a crushing layer made of synthetic fibers, which has a porous structure, and the porous structure constitutes the crushing holes. In some embodiments, the cross-sectional shape of the crushing layer includes a square (or a straight line). Figure 8 (a) The square shown.

[0080] Fluid movement within a pipeline is caused by pressure differentials. Due to factors such as pipeline resistance, the flow velocity distribution within the pipeline is generally characterized by higher velocity in the center and slower velocity at the edges. For example, the flow velocity of the fluid in the center of the first tube is higher than that at the edges of the first tube. In some embodiments, the center portion of the crushing layer in the center of the first tube protrudes / is recessed relative to the edge portion of the crushing layer at the edge of the first tube. This can align with the flow of fluid within the first tube and facilitate the fragmentation of droplets of DCE carried by the carrier gas entering the fragmentation device, thereby forming droplets of DCE carried by the carrier gas having a first flow rate.

[0081] In some embodiments, along the direction of fluid flow (which can be understood as the Z direction), the middle portion of the crushing layer located in the middle of the first tube body is recessed from the edge portion of the crushing layer located at the edge of the first tube body. In some embodiments, the cross-sectional shape of the crushing layer includes a V-shape, an arc shape, or a semi-wave shape. Figure 8 (b) V-shaped, Figure 8 (c) shown in the arc (such as a semicircular arc or a semi-elliptical arc), Figure 8 (d) The partial arc (e.g., composed of two straight lines and an arc), Figure 8 (e) shows the half waveform (e.g., the negative half-cycle waveform of a sine wave).

[0082] In some embodiments, the droplet-shaped material carried by the carrier gas after fragmentation has a first flow rate ranging from 0 to 300 sccm; the first predetermined pore size ranges from 0.1 μm to 10 μm; and the inner diameter of the tube body ranges from 5 mm to 20 mm. In some embodiments, the first predetermined number ranges from 1000 to 8000. Preferably, the first predetermined pore size ranges from 1.25 μm to 6.5 μm. Preferably, the first predetermined number ranges from 1300 to 6000.

[0083] In some embodiments, the mesh size of the crushing layer ranges from 406 to 3000, and the diameter of the crushing holes ranges from 30 μm to 5 μm. For example, if the crushing layer size is 1600 mesh and the diameter of the crushing holes is 10 μm, the number of holes = S / (25.4*25.4)*1600, where S is the cross-sectional area corresponding to the inner diameter of the first tube.

[0084] In some embodiments, the multiple crushing layers can be made of the same material as the first tube and integrally molded. For example, the multiple crushing layers can be made of the same polytetrafluoroethylene (PTFE) material as the first tube and integrally molded. The crushing layer area is consistent with the area S corresponding to the inner diameter of the first tube. The manufacturing method only requires changing the mold based on the original first tube, while the raw materials, additives, modifiers, and extrusion molding method remain unchanged.

[0085] refer to Figure 9In some embodiments, the crushing component includes a plurality of crushing tubes having a second predetermined aperture, located within the tube body and arranged in parallel along the tube body's extension direction; the crushing tubes communicate with at least one crushing hole. In the following description, the tube body is defined as the second tube body, and the multiple crushing tubes are described in detail as being located within the second tube body and arranged in parallel along the tube body's extension direction. The multiple crushing tubes being located within the second tube body can be understood as at least a portion of the multiple crushing tubes (the portion connected to the second tube body) being located within the range encompassed by the second tube body's inner diameter, or as all of the multiple crushing tubes being located within the range encompassed by the second tube body's inner diameter.

[0086] In some embodiments, the plurality of crushing tubes have a second preset number, each crushing tube has a second preset aperture, and within a unit cross-sectional area of ​​the second tube body, the second preset number is negatively correlated with the second preset aperture; the droplet-shaped material carried by the carrier gas after crushing has a second flow rate, and the second preset aperture is positively correlated with the second flow rate.

[0087] It should be noted that Figure 9 In the embodiment, the second tube body includes two discontinuous parts, which are connected by a plurality of crushing tubes. The part where the plurality of crushing tubes are connected to the second tube body has a layered structure, and the layered structure has at least one crushing hole for communicating with the crushing tube.

[0088] In some embodiments, a furnace tube oxidation machine requires a suitable second flow rate to implement the DCE oxidation process, and the specific structure of the crushing device, the relative installation position of the crushing device, etc. are all related to the second flow rate.

[0089] When the second flow rate is less than or equal to the third preset threshold, the droplet-shaped DCE carried by the carrier gas is insufficient to support the furnace tube oxidation machine to implement the DCE oxidation process; when the second flow rate is greater than the fourth preset threshold, there are undesirable large DCE droplets in the droplet-shaped DCE carried by the carrier gas. The undesirable large DCE droplets do not have time to vaporize in the furnace tube and participate in the DCE oxidation reaction, resulting in DCE droplets remaining on the oxide film of the wafer and the appearance of spherical defects.

[0090] The second flow rate is related to the specific structure of the crushing device. For example, a larger number of crushing tubes and a smaller diameter of the crushing tube holes result in a smaller first flow rate. The second flow rate is also related to the relative installation position of the crushing device. For example, a vertical placement of the crushing device relative to a horizontal placement of the crushing device results in a larger second flow rate. For another example, a horizontal placement of the crushing device relative to the top surface of the storage tank, the bottom surface or top surface of the crushing device, and the bottom surface of the air inlet port of the furnace pipe results in a larger second flow rate.

[0091] In some embodiments, two crushing tubes, three crushing tubes, four crushing tubes or more than four crushing tubes can be arranged in parallel in the second tube body. Figure 9 ) takes four crushing tubes arranged in parallel in the second tube body as an example, and the example is not intended to limit the embodiments of the present application.

[0092] In some embodiments, the crushing tube includes a first end and a second end; the first end is proximate to the gas inlet port of the crushing device, and the second end is proximate to the gas outlet port of the crushing device; the second predetermined aperture of the first end is larger than the second predetermined aperture of the second end. The flow rate of the droplets of DCE carried by the carrier gas through the first end is larger than the flow rate of the droplets of DCE carried by the carrier gas through the second end. The crushing holes in the crushing tube are configured to have a gradually decreasing aperture size along the extension direction of the second tube body, thereby aligning with the fluid flow within the second tube body and facilitating the crushing of the droplets of DCE carried by the carrier gas entering the crushing device, thereby forming the crushed droplets of DCE carried by the carrier gas having the second flow rate.

[0093] Fluid movement within a pipeline is caused by pressure differentials. Due to factors such as pipeline resistance, the flow velocity distribution within the pipeline is generally characterized by a high velocity in the center and a slow velocity at the edges. For example, in some embodiments, the multiple crushing tubes include a first crushing tube and a second crushing tube; the first crushing tube is located near the inner wall of the second tube, and the second crushing tube is located near the middle of the second tube; the aperture of the first crushing tube is larger than the aperture of the second crushing tube. The fluid velocity in the center of the second tube is greater than the fluid velocity at the edge of the second tube. The larger aperture of the first crushing tube can optimize fluid flow within the second tube, facilitating the fragmentation of droplets of DCE carried by the carrier gas entering the fragmentation device, thereby forming droplets of DCE carried by the carrier gas having a second flow rate.

[0094] By reducing the air inlet diameter of the crushing tube (the aperture of the crushing tube hole), and / or setting a bending idea to achieve liquid vapor collision with the tube wall and air flow cutting, the crushing effect is achieved. The specific principle diagram is as follows Figure 10A 、 Figure 10B and Figure 10C It should be noted that Figure 10A 、 Figure 10B and Figure 10C In the figure, the second tube body extends continuously, and multiple crushing tubes can be fixed to the inner wall of the second tube body. In order to clearly show the multiple crushing tubes, only part of the second tube wall is shown.

[0095] In some embodiments, the crushing tube is at least partially bent. For example, the crushing tube may be in the shape of a bend or a spring. Figure 10B (b) The bent crushing tube shown, Figure 10C(b) The spring-type crushing tube shown. In other embodiments, the crushing tube is a straight tube. For example, the crushing tube can be in a straight line shape, referring to Figure 10A (b) The linear crushing tube shown.

[0096] In some embodiments, reference Figure 9 The second tube body includes two discontinuous parts, which are connected by a plurality of broken tubes, or, referring to Figure 10A 、 Figure 10B or Figure 10C The second tube body extends continuously, and a plurality of crushing tubes are fixed to the inner wall of the second tube body.

[0097] In some embodiments, the second flow rate ranges from 0 to 300 sccm; the second preset aperture ranges from 0.5 mm to 1.5 mm; and the tube body inner diameter ranges from 5 mm to 20 mm. In some embodiments, the second preset number ranges from 2 to 12. Preferably, the second preset aperture ranges from 0.5 mm to 1.25 mm. Preferably, the second preset number ranges from 3 to 9. For example, the crushing tube is a straight air tube, the aperture of the crushing tube hole is 0.7 mm, and the number of air tubes = S / (25.4*25.4)*12, whichever is the integer; the crushing tube is a spiral air tube, the aperture of the crushing tube hole is 1 mm, and the number of air tubes is 4, where S is the cross-sectional area corresponding to the second tube body inner diameter.

[0098] In some embodiments, the multiple crushing tubes can be made of the same material as the second tube and integrally molded. For example, the multiple crushing tubes can be made of the same polytetrafluoroethylene (PTFE) material as the second tube and integrally molded. The crushing tube area is consistent with the area S corresponding to the inner diameter of the second tube. The manufacturing method only requires changing the mold based on the original second tube, while the raw materials, additives, modifiers, and extrusion molding method remain unchanged.

[0099] In some embodiments, the material introduction device includes multiple crushing devices; the multiple crushing devices are arranged in series or in parallel between the storage tank and the reaction chamber. For example, multiple crushing devices can be arranged in parallel or in series between the first valve and the second valve.

[0100] In some embodiments, the specific structures of multiple parallel-connected breakup devices can be identical; the specific structures of multiple breakup devices in a series can be different. The multiple breakup devices function as a single, integrated breakup unit to break up the droplets of DCE carried by the carrier gas, reducing the number and volume of large DCE droplets within the droplets, ensuring complete vaporization of the DCE entering the reaction chamber, and reducing or eliminating the possibility of residual DCE droplets remaining in the furnace tube due to incomplete vaporization of a small number of large DCE droplets, which can lead to spherical defects in the wafer.

[0101] Figure 11This is a microscopic schematic diagram of the airflow in the gas duct before entering the furnace tube in an embodiment of the present application. Figure 12 This is a microscopic diagram of the front and rear airflows entering the pre-reaction chamber of the furnace tube according to an embodiment of the present application. Figure 13 This is a microscopic diagram of the airflow entering the reaction chamber of the furnace tube according to an embodiment of the present application.

[0102] Figure 3 、 Figure 4 and Figure 5 As shown in the example, the physical state of the DCE provided in the embodiment of the present application changes in the pipe before entering the furnace tube, the pre-reaction chamber of the furnace tube, and the reaction chamber of the furnace tube as shown in the example. Figure 11 、 Figure 12 and Figure 13 The specific process analysis is as follows:

[0103] Compared to Figure 3 ,refer to Figure 11 A crushing component is installed in the DCE introduction device before entering the furnace tube. The crushing component is used to crush the droplet-shaped DCE carried by the carrier gas, reducing the number / volume of large DCE droplets in the droplet-shaped DCE carried by the carrier gas. As a result, there are fewer large DCE droplets in the droplet-shaped DCE carried by the carrier gas (such as nitrogen N2) entering the furnace tube.

[0104] Compared to Figure 4 ,refer to Figure 12 The droplets of DCE carried by the carrier gas (such as nitrogen N2) entering the reaction chamber of the furnace tube contain fewer large DCE droplets.

[0105] Compared to Figure 5 ,refer to Figure 13 When the reaction chamber of the furnace tube is heated at, for example, 700°C, most of the large and small DCE droplets are vaporized and react with oxygen. The number of large DCE droplets that fail to vaporize within the reaction time is reduced or eliminated, and they participate in the DCE oxidation reaction, resulting in a reduction in or no spherical defects in the oxide film of the wafer.

[0106] In each embodiment of the present application, a crushing component is added to the material introduction device before entering the reaction chamber. The crushing component is used to crush the droplet-shaped material carried by the carrier gas, reduce the number / volume of large droplets of material in the droplet-shaped material carried by the carrier gas, and make the material entering the reaction chamber completely vaporized, reducing or eliminating the residual material droplets after incomplete vaporization of a very small number of large material droplets in the reaction chamber, resulting in spherical defects in the wafer.

[0107] It should be understood that "one embodiment" or "an embodiment" mentioned throughout the specification means that the specific features, structures or characteristics related to the embodiment are included in at least one embodiment of the present application. Therefore, "in one embodiment" or "in an embodiment" appearing throughout the specification does not necessarily refer to the same embodiment. In addition, these specific features, structures or characteristics can be combined in one or more embodiments in any suitable manner. It should be understood that in the various embodiments of the present application, the size of the serial numbers of the above-mentioned processes does not mean the order of execution. The execution order of each process should be determined by its function and internal logic, and should not constitute any limitation on the implementation process of the embodiments of the present application. The above-mentioned serial numbers of the embodiments of the present application are for description only and do not represent the advantages and disadvantages of the embodiments.

[0108] The above description is only a preferred embodiment of the present application and does not limit the scope of protection of the present application. All equivalent structural transformations made based on the contents of the present application description and drawings, or direct / indirect applications in other related technical fields, are included in the scope of protection of the present application.

Claims

1. A material feeding device, characterized in that: include: A storage tank for storing liquid material and for introducing a carrier gas into the liquid material through an air inlet port of the storage tank to produce droplet-shaped material, wherein the droplet-shaped material carried by the carrier gas is discharged through an air outlet port of the storage tank; A crushing device is located between the storage tank and the reaction chamber; the crushing device includes a tube body and a crushing component located in the tube body and arranged along the extension direction of the tube body; the crushing component is used to crush the droplet-shaped material carried by the carrier gas entering the air inlet port of the crushing device, and the droplet-shaped material carried by the carrier gas after crushing is discharged through the air outlet port of the crushing device.

2. The material feeding device according to claim 1, characterized in that: The crushing component includes a plurality of crushing holes having a preset aperture and a preset number; within a unit cross-sectional area of ​​the tube body, the preset number is negatively correlated with the preset aperture; The droplet-shaped material carried by the carrier gas after being crushed has a flow rate, and the preset aperture is positively correlated with the flow rate.

3. The material feeding device according to claim 2, characterized in that: The crushing component includes a plurality of crushing layers with a first preset aperture, which are located in the tube body and arranged in series along the extending direction of the tube body; the crushing layers include a plurality of the crushing holes.

4. The material feeding device according to claim 3, characterized in that: The multiple crushing layers include a first crushing layer and a second crushing layer; the first crushing layer is close to the air inlet port of the crushing device, and the second crushing layer is close to the air outlet port of the crushing device; wherein the first preset aperture of the first crushing layer is larger than the first preset aperture of the second crushing layer.

5. The material feeding device according to claim 3, characterized in that: The droplet-shaped material carried by the carrier gas after being crushed has a first flow rate, which is in the range of 0 to 300 sccm; the first preset pore size is in the range of 0.1 μm to 10 μm; and the inner diameter of the tube body is in the range of 5 mm to 20 mm.

6. The material feeding device according to claim 2, characterized in that: The crushing component includes a plurality of crushing tubes with a second preset aperture, which are located in the tube body and arranged in parallel along the extending direction of the tube body; the crushing tubes are connected to at least one of the crushing holes.

7. The material feeding device according to claim 6, characterized in that: The crushing tube includes a first end and a second end; the first end is close to the air inlet port of the crushing device, and the second end is close to the air outlet port of the crushing device; wherein the second preset aperture of the first end is larger than the second preset aperture of the second end.

8. The material feeding device according to claim 6, characterized in that: The crushing tube is at least partially bent.

9. The material feeding device according to claim 1, characterized in that: The material feeding device also includes: a liquid delivery system connected to the liquid replenishing port of the storage tank and used for introducing the liquid material into the storage tank; The filter is located between the liquid delivery system and the storage tank and is used to filter the liquid material entering the storage tank.

10. The material feeding device according to claim 1, characterized in that: The material introduction device includes a plurality of the crushing devices; the plurality of the crushing devices are arranged in series or in parallel between the storage tank and the reaction chamber.

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