Broadband power amplification circuit and device
By using three sets of power amplifier units and transformers connected in series in the power amplification system, the output power superposition and frequency band expansion are achieved, solving the problem of difficulty in achieving wide frequency band and high output power at the same time in the existing technology.
Patent Information
- Application Number
- CN202422127639.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-30
- Publication Date
- 2025-09-19
- Estimated Expiration
- 2034-08-30
AI Technical Summary
It is difficult for existing power amplification systems to achieve both wide bandwidth and high output power at the same time.
Three groups of power amplifier units and transformers are connected in series, with each power amplifier unit corresponding to one transformer, to achieve superposition of output power and widen the frequency band at the same time.
It achieves both wide bandwidth and high output power, and improves the performance of the power amplification system.
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Figure CN223364119U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of transmitters, and in particular to a wide-band power amplifier circuit and device. Background Art
[0002] The power amplifier system is the core component of a high-power transmitter. Its performance determines the transmitter's output power, efficiency, and other key technical indicators. The power amplifier system's primary function is to amplify small signals to meet the transmitter's output power requirements.
[0003] In related technologies, power amplifier systems are limited by bandwidth and output power. Broadband power amplifier systems have low output power, while high-output power amplifier systems have narrow operating bandwidths. Therefore, how to achieve both high output power and wide bandwidth in a power amplifier system is a pressing issue. Utility Model Content
[0004] In order to make the amplification part have a large output power and a wide frequency bandwidth, the present application provides a wide-band power amplifier circuit and device.
[0005] In a first aspect, the present application provides a broadband power amplifier circuit that adopts the following technical solution:
[0006] A broadband power amplifier circuit includes a first power amplifier unit, a second power amplifier unit, a third power amplifier unit, a first transformer T1, a second transformer T2, and a third transformer T3, wherein the first power amplifier unit is connected to the first transformer T1, the second power amplifier unit is connected to the second transformer T2, and the third power amplifier unit is connected to the third transformer T3. A first output end of the first transformer T1 is used to connect to an external load, a second output end of the first transformer T1 is connected to a first output end of the second transformer T2, a second output end of the second transformer T2 is connected to a first output end of the third transformer T3, and a second output end of the third transformer T3 is connected to a ground end.
[0007] By adopting the above technical solution, the first transformer T1, the second transformer T2 and the third transformer T3 are connected in series, and each transformer corresponds to a power amplifier unit, so that the output power is superimposed and the frequency band is increased, that is, a wide frequency band is achieved.
[0008] Optionally, the first power amplifier unit, the second power amplifier unit and the third power amplifier unit are all full-bridge circuits.
[0009] Optionally, the control end of the first power amplifier unit is connected to a first driving module and a second driving module, the second power amplifier unit is connected to a third driving module and a fourth driving module, and the third power amplifier unit is connected to a fifth driving module and a sixth driving module.
[0010] By adopting the above technical solution and utilizing the driving module to drive each power amplifier unit, the operation of the power amplifier unit can be better controlled.
[0011] Optionally, the first power amplifier unit includes a MOS transistor Q1, a MOS transistor Q2, a MOS transistor Q3, and a MOS transistor Q4. The gate of the MOS transistor Q1 is used to connect to the first driving module, the drain of the MOS transistor Q1 is connected to the power supply terminal VCC, the source of the MOS transistor Q1 is connected to the drain of the MOS transistor Q2, the source of the MOS transistor Q2 is connected to the source of the MOS transistor Q4, the source of the MOS transistor Q2 is also connected to the ground terminal, the drain of the MOS transistor Q4 is connected to the source of the MOS transistor Q3, the drain of the MOS transistor Q3 is connected to the power supply terminal VCC, the source of the MOS transistor Q1 is connected to the capacitor C1, the other end of the capacitor C1 is used to connect to the first transformer T1, and the source of the MOS transistor Q3 is also used to connect to the first transformer T1.
[0012] By adopting the above technical solution, the MOS tube has the characteristics of high input impedance, high gain, and power amplification.
[0013] In a second aspect, the present application provides a broadband power amplifier device that adopts the following technical solution:
[0014] A wide-band power amplifier device includes the wide-band power amplifier circuit as described in the first aspect.
[0015] In summary, this application includes at least one of the following beneficial technical effects:
[0016] By connecting the first transformer T1, the second transformer T2 and the third transformer T3 in series, each transformer corresponds to a power amplifier unit, so as to achieve output power superposition and also increase the frequency band, that is, to achieve a wide frequency band. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] Figure 1 It is a block diagram showing the overall connection of this embodiment.
[0018] Figure 2 2 is a circuit diagram showing the first power amplifier unit of this embodiment.
[0019] Description of the accompanying drawings: 1. First power amplifier unit; 2. Second power amplifier unit; 3. Third power amplifier unit. DETAILED DESCRIPTION
[0020] The following is combined with Figure 1-2 This application is described in further detail.
[0021] The embodiment of the present application discloses a wide-band power amplifier circuit. Figure 1 A broadband power amplifier circuit includes a first power amplifier unit 1, a second power amplifier unit 2, a third power amplifier unit 3, a first transformer T1, a second transformer T2 and a third transformer T3, wherein the first power amplifier unit 1 is connected to the first transformer T1, the second power amplifier unit 2 is connected to the second transformer T2, the third power amplifier unit 3 is connected to the third transformer T3, a first output end of the first transformer T1 is used to connect to an external load, a second output end of the first transformer T1 is connected to the first output end of the second transformer T2, a second output end of the second transformer T2 is connected to the first output end of the third transformer T3, and a second output end of the third transformer T3 is connected to a ground end.
[0022] Among them, the first transformer T1, the second transformer T2 and the third transformer T3 are transformers using annular ferrite rings, which can reduce the loss of the transformers when working at high frequencies, and have good output characteristics and anti-interference capabilities, and high electrical efficiency.
[0023] The three transformers are connected in series to achieve power superposition and widen the frequency band.
[0024] The first power amplifier unit 1, the second power amplifier unit 2 and the third power amplifier unit 3 are all full-bridge circuits, that is, the first power amplifier unit 1, the second power amplifier unit 2 and the third power amplifier unit 3 have the same component composition, but are respectively connected to different transformers and different drive modules. In this embodiment, they are named separately for better distinction and description.
[0025] The control end of the first power amplifier unit 1 is connected to the first driving module and the second driving module, the second power amplifier unit 2 is connected to the third driving module and the fourth driving module, and the third power amplifier unit 3 is connected to the fifth driving module and the sixth driving module.
[0026] The driving module can drive the corresponding power amplifier unit to work.
[0027] Reference Figure 2Taking the first power amplifier unit 1 as an example, the first power amplifier unit 1 includes a MOS transistor Q1, a MOS transistor Q2, a MOS transistor Q3, and a MOS transistor Q4. The gate of the MOS transistor Q1 is used to connect to the first driving module. The drain of the MOS transistor Q1 is connected to the power supply terminal VCC. The source of the MOS transistor Q1 is connected to the drain of the MOS transistor Q2. The source of the MOS transistor Q2 is connected to the source of the MOS transistor Q4. The source of the MOS transistor Q2 is also connected to the ground terminal. The drain of the MOS transistor Q4 is connected to the source of the MOS transistor Q3. The drain of the MOS transistor Q3 is connected to the power supply terminal VCC. The source of the MOS transistor Q1 is connected to a capacitor C1. The other end of the capacitor C1 is used to connect to the first transformer T1. The other end of the capacitor C1 is connected to pin 1 of the first transformer T1. The source of the MOS transistor Q3 is connected to the first transformer T1, that is, the source of the MOS transistor Q3 is connected to pin 2 of the first transformer T1. The gates of the MOS transistor Q1 and the MOS transistor Q2 are both connected to the first driving module, and the gates of the MOS transistor Q3 and the MOS transistor Q4 are both connected to the second driving module.
[0028] The full-bridge circuit is driven by the first driving module and the second driving module to realize the on and off of the control circuit, that is, to drive the operation of the power amplifier unit.
[0029] In this embodiment, the six driving modules are all selected from existing MOS transistor driving modules.
[0030] The implementation principle of a wide-band power amplifier circuit in an embodiment of the present application is: three power amplifier units and corresponding three transformers are provided to form a superimposed output, which can increase the power. Compared with related technologies, it has both high power and wide bandwidth characteristics.
[0031] The present application also discloses a broadband power amplifier device, which includes the broadband power amplifier circuit described above.
[0032] The above are all preferred embodiments of the present application, and are not intended to limit the scope of protection of the present application. Therefore, any equivalent changes made based on the structure, shape, and principle of the present application should be included in the scope of protection of the present application.
Claims
1. A broadband power amplifier circuit, characterized in that: The invention comprises a first power amplifier unit (1), a second power amplifier unit (2), a third power amplifier unit (3), a first transformer T1, a second transformer T2 and a third transformer T3, wherein the first power amplifier unit (1) is connected to the first transformer T1, the second power amplifier unit (2) is connected to the second transformer T2, the third power amplifier unit (3) is connected to the third transformer T3, the first output end of the first transformer T1 is used to connect to an external load, the second output end of the first transformer T1 is connected to the first output end of the second transformer T2, the second output end of the second transformer T2 is connected to the first output end of the third transformer T3, and the second output end of the third transformer T3 is connected to the ground end.
2. The broadband power amplifier circuit according to claim 1, wherein: The first power amplifier unit (1), the second power amplifier unit (2) and the third power amplifier unit (3) are all full-bridge circuits.
3. A broadband power amplifier circuit according to claim 1 or 2, characterized in that: The control end of the first power amplifier unit (1) is connected to the first drive module and the second drive module, the second power amplifier unit (2) is connected to the third drive module and the fourth drive module, and the third power amplifier unit (3) is connected to the fifth drive module and the sixth drive module.
4. The broadband power amplifier circuit according to claim 3, wherein: The first power amplifier unit (1) comprises a MOS transistor Q1, a MOS transistor Q2, a MOS transistor Q3 and a MOS transistor Q4. The gate of the MOS transistor Q1 is used to connect to the first driving module. The drain of the MOS transistor Q1 is connected to the power supply terminal VCC. The source of the MOS transistor Q1 is connected to the drain of the MOS transistor Q2. The source of the MOS transistor Q2 is connected to the source of the MOS transistor Q4. The source of the MOS transistor Q2 is also connected to the ground terminal. The drain of the MOS transistor Q4 is connected to the source of the MOS transistor Q3. The drain of the MOS transistor Q3 is connected to the power supply terminal VCC. The source of the MOS transistor Q1 is connected to a capacitor C1. The other end of the capacitor C1 is used to connect to the first transformer T1. The source of the MOS transistor Q3 is also used to connect to the first transformer T1.
5. A broadband power amplifier device, characterized in that: The invention comprises a wide-band power amplifier circuit as claimed in any one of claims 1 to 4.