Sheld box washing system
By setting electrodes in the mirror box chamber to generate plasma to react with carbon-containing organic matter and produce extractable product gas, the problem of incomplete cleaning of the mirror box chamber is solved, and efficient cleaning and stability of beam transmission are achieved.
Patent Information
- Application Number
- CN202422627772.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-29
- Publication Date
- 2025-09-23
- Estimated Expiration
- 2034-10-29
AI Technical Summary
In the prior art, it is difficult to effectively remove hydrocarbon contaminants in the beamline mirror box chamber, resulting in the vacuum chamber being not clean enough, affecting the efficiency and quality of beam transmission.
Electrodes are set in the chamber of the mirror box, and working gas is introduced through the air inlet. The electrodes are used to generate plasma to react with carbon-containing organic matter to generate extractable product gas. The product gas is extracted by combining with the vacuum exhaust port to achieve efficient cleaning.
It achieves efficient cleaning of the mirror box chamber, obtains a cleaner vacuum environment, reduces beam transmission loss, and does not damage the inner wall of the chamber. It is suitable for mirror box before installation, during use and later maintenance.
Smart Images

Figure CN223367740U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of mirror box cleaning, in particular to a mirror box cleaning system. Background Art
[0002] Synchrotron radiation sources provide irreplaceable experimental platforms for research in basic disciplines and applied technologies. Beamlines are a crucial component of synchrotron radiation experiments, monochromatizing synchrotron radiation and maximizing the light flux delivered to samples, meeting diverse user requirements.
[0003] To reduce the loss of the beam during transmission, all equipment in the entire beamline must meet the requirements of near-zero carbon and hydrogen contamination and high vacuum. The content of carbon and hydrogen contaminants above 39, 41, 43, and 45 must be less than 0.1% (1-100 amu) of the total pressure of the equipment. The total leakage rate of the equipment should be less than 1×10 -10 How to better remove hydrocarbon contaminants from the chamber of the mirror box in the beam line and obtain a cleaner vacuum chamber is one of the problems that need to be solved urgently. Utility Model Content
[0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the present invention is to provide a mirror box cleaning system that can better remove carbon-containing organic matter in the chamber of the mirror box to obtain a cleaner vacuum chamber.
[0005] According to an embodiment of the present invention, the mirror box cleaning system includes: a mirror box, the mirror box having a chamber, the mirror box being provided with an air inlet and a vacuum exhaust port connected to the chamber; an electrode, the electrode being arranged in the chamber, the electrode being connected to a radio frequency source, the air inlet being connected to the gas source, the air inlet being used to introduce a working gas into the chamber, the electrode being used to ionize the working gas to generate plasma, the plasma being used to remove carbon-containing organic matter in the chamber, the vacuum exhaust port being connected to a vacuum source, and the vacuum exhaust port being used to extract gas from the chamber.
[0006] According to the mirror box cleaning system of the embodiment of the present invention, an electrode is arranged in the chamber of the mirror box, and an air inlet and a vacuum exhaust port connected to the chamber are arranged. The air inlet introduces working gas into the chamber, and the electrode can ionize the working gas introduced into the chamber to generate plasma. The plasma will directly or indirectly react with the carbon-containing organic matter in the chamber to produce product gas, and finally the product gas is extracted from the chamber under the suction action of the vacuum exhaust port. As the plasma is continuously generated and the reaction is continuously carried out, the carbon-containing organic matter in the chamber is continuously consumed and removed, thereby achieving efficient cleaning of the chamber of the mirror box and obtaining a cleaner vacuum chamber, which is conducive to preventing the light beam from being lost as much as possible during transmission in the chamber; in addition, the cleaning process will not cause damage to the inner wall of the chamber, and the chamber of the mirror box can be cleaned before the installation of the mirror box, during use, and during later maintenance.
[0007] In some embodiments, the mirror box cleaning system further includes a cleaning monitoring device, which is used to monitor the removal process of carbon-containing organic matter.
[0008] In some embodiments, the cleaning monitoring device includes a plasma spectrometer, the mirror box is provided with an observation window, and the plasma spectrometer monitors the plasma concentration distribution in the chamber through the observation window. Changes in the plasma concentration distribution reflect the removal progress of the carbon-containing organic matter.
[0009] In some embodiments, the cleaning monitoring device includes a mass spectrometer, a vacuum tube is connected between the vacuum exhaust port and the vacuum source, and the mass spectrometer is connected to the vacuum tube. The mass spectrometer is used to extract the gas in the vacuum tube and generate a mass spectrum of the gas. Changes in the mass spectrum of the gas reflect the removal process of the carbon-containing organic matter.
[0010] In some embodiments, an optical element is provided in the chamber, and the mirror box system further includes a film thickness measuring instrument, which is used to detect the thickness of the film layer on the surface of the optical element. When the film thickness measuring instrument detects that the thickness of the film layer on the surface of the optical element is less than a set value, the electrode is controlled to stop working.
[0011] In some embodiments, the film thickness measuring instrument includes a measuring probe, which is disposed in the chamber and opposite to the surface of the optical element for detecting the thickness of the film layer on the surface of the optical element.
[0012] In some embodiments, the gas source includes a mixing chamber, a reaction gas source and an auxiliary gas source. The reaction gas source and the auxiliary gas source are both connected to the mixing chamber. The reaction gas source is used to introduce reaction gas into the mixing chamber. The auxiliary gas source is used to introduce auxiliary gas into the mixing chamber. The mixing chamber is used to mix the reaction gas and the auxiliary gas to form the working gas. The mixing chamber is connected to the air inlet.
[0013] In some embodiments, the gas mixing chamber is connected to a vacuum suction component, and the vacuum suction component is used to perform a vacuum process on the gas mixing chamber before the reaction gas and the auxiliary gas are filled into the gas mixing chamber.
[0014] In some embodiments, the reaction gas includes oxygen or hydrogen, and the auxiliary gas includes argon.
[0015] In some embodiments, the vacuum exhaust port extracts the gas in the chamber from the chamber when the electrode is in the working state; the vacuum exhaust port is used to vacuum the chamber before the electrode is switched to the working state.
[0016] Additional aspects and advantages of the present invention will be given in part in the following description and will become apparent from the following description or learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] The above and / or additional aspects and advantages of the present invention will become apparent and readily understood from the description of the embodiments in conjunction with the following drawings, in which:
[0018] Figure 1 This is a structural diagram of a mirror box cleaning system according to an embodiment of the present invention;
[0019] Figure 2 This is a structural block diagram of a mirror box cleaning system according to an embodiment of the present utility model.
[0020] Reference numerals:
[0021] Mirror box cleaning system 100;
[0022] Mirror box 10;
[0023] Chamber 101; air inlet 102; vacuum pumping port 103; observation window 104; angle valve 105; micro-leakage valve 106;
[0024] Electrode 20; RF source 30; RF matching device 301; RF power source 302; vacuum source 40;
[0025] Cleaning monitoring device 50;
[0026] Plasma spectrometer 501; mass spectrometer 502; film thickness measuring instrument 503; measuring probe 504; vacuum tube 601;
[0027] Optical element 70;
[0028] Gas source 80;
[0029] Gas mixing chamber 801; reaction gas source 802; auxiliary gas source 803; vacuum suction component 804;
[0030] Gas distribution cabinet 805; flow controller 806;
[0031] Control host 90; human-computer interaction interface 901; cleaning vehicle 200. DETAILED DESCRIPTION
[0032] To make the purpose, technical solutions, and advantages of the embodiments of the present invention more clear, the technical solutions in the embodiments of the present invention will be clearly described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.
[0033] Unless otherwise defined, all technical and scientific terms used in this utility model have the same meanings as those commonly understood by those skilled in the art to which this utility model belongs; the terms used in the specification of this utility model are only for the purpose of describing specific embodiments and are not intended to limit this utility model; the terms "including" and "having" and any variations thereof in the specification and claims of this utility model and the above-mentioned drawings are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of this utility model or the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order or a primary-secondary relationship.
[0034] In the description of this utility model, it should be noted that, unless otherwise expressly specified or limited, the terms "mounted," "connected," "connected," and "attached" should be understood in a broad sense. For example, they may refer to fixed connections, detachable connections, or integral connections; they may refer to direct connections, indirect connections through an intermediate medium, or internal communication between two components. Those skilled in the art will understand the specific meanings of these terms in this utility model based on specific circumstances.
[0035] In this application, the term "and / or" simply describes a relationship between related objects, indicating that three possible relationships exist. For example, "A and / or B" can represent: A exists alone, A and B exist simultaneously, and B exists alone. Furthermore, the character " / " in this application generally indicates that the related objects are in an "or" relationship.
[0036] In the embodiments of the present invention, the same reference numerals represent the same components, and for the sake of brevity, detailed descriptions of the same components in different embodiments are omitted. It should be understood that the thickness, length, width, and other dimensions of the various components in the embodiments of the present invention, as well as the overall thickness, length, width, and other dimensions of the integrated device shown in the drawings are for illustrative purposes only and do not constitute any limitation on the present invention.
[0037] The term "plurality" used in the present invention refers to more than two (including two).
[0038] It should be noted that a synchrotron radiation source typically consists of a linear accelerator, a booster, a storage ring, a beamline, and an experimental station. The linear accelerator provides the initial velocity for electrons; the booster further accelerates the electrons; the storage ring, after injecting electrons, produces the synchrotron radiation beam and is equipped with various inserts, such as wiggler magnets and undulators; and the experimental station is located at the end of the beamline.
[0039] Beamlines are key components for extracting and guiding high-energy beams from the storage ring. They not only guide the beams generated in the storage ring to the experimental stations, but also ensure minimal loss of beam quality to support a variety of high-precision experiments. Effective cleaning of the beamline's mirror box chamber ensures a cleaner vacuum, minimizing beam loss during transmission.
[0040] The following combination Figure 1 and Figure 2 The mirror box cleaning system 100 of the present invention is described below.
[0041] like Figure 1 and Figure 2 As shown, a mirror box cleaning system 100 according to an embodiment of the present invention includes a mirror box 10 and an electrode 20. The mirror box 10 has a chamber 101, and is provided with an air inlet 102 and a vacuum pumping port 103 connected to the chamber 101; the electrode 20 is disposed in the chamber 101, and is connected to the radio frequency source 30. The air inlet 102 is connected to the gas source 80. The air inlet 102 is used to introduce a working gas into the chamber 101. The electrode 20 is used to ionize the working gas to generate plasma, which is used to remove carbon-containing organic matter in the chamber 101. The vacuum pumping port 103 is connected to the vacuum source 40 and is used to extract gas from the chamber 101.
[0042] Specifically, the mirror box 10 comprises a high-vacuum chamber 101, which may be provided with optical elements 70 or other components, such as reflectors, lenses, observation windows, filters, scintillators, photodiodes, slits, pinholes, slit blades, slides, sample holders, etc. The beamline includes a connected water-cooled four-knife diaphragm, a monochromator, a manual four-knife diaphragm, a mirror box (e.g., a deflection mirror box), a gas ionization chamber, and a differential system, etc. The mirror box is primarily used to collimate and focus synchrotron radiation. The mirror box 10 in this application can be a mirror box in a beamline or in other systems.
[0043] When the mirror box cleaning system of the present invention is in operation, the gas source 80 introduces working gas into the chamber 101 through the air inlet 102, and the radio frequency source 30 acts on the electrode 20, causing the electrode 20 to generate radio frequency plasma discharge, ionizing the working gas to generate plasma, and the plasma is used to remove carbon-containing organic matter in the chamber 101. For example, the working gas may include oxygen and argon. The electrode 20 can ionize oxygen to obtain activated oxygen ions, and the oxygen ions will combine with oxygen to generate ozone. The ozone reacts with the carbon-containing compounds in the chamber 101 to generate gaseous carbon monoxide or carbon dioxide. Then, under the suction action of the vacuum exhaust port 103, the carbon monoxide and carbon dioxide are extracted from the chamber 101, thereby achieving the removal of carbon-containing organic matter in the chamber 101.
[0044] For example, the electrode 20 may be directly provided on the inner wall of the chamber 101, or may be installed on the inner wall of the chamber 101 via a bracket. Figure 2 As shown, the RF source 30 includes a RF matcher 301 and a RF power source 302 . The RF matcher 301 is electrically connected to the RF power source 302 , and the RF power source 302 is electrically connected to the electrode 20 .
[0045] For example, the working gas may be composed of a certain ratio of oxygen and argon, or may be composed of a certain ratio of hydrogen and argon. The argon mainly plays a role in assisting the catalysis. For example, the vacuum source 40 may be a molecular pump group, a mechanical pump group, etc.
[0046] According to the mirror box cleaning system 100 of the embodiment of the present invention, an electrode 20 is set in the chamber 101 of the mirror box 10, and an air inlet 102 and a vacuum exhaust port 103 connected to the chamber 101 are set. The air inlet 102 introduces working gas into the chamber 101, and the electrode 20 can ionize the working gas introduced into the chamber 101 to generate plasma. The plasma will directly or indirectly react with the carbon-containing organic matter in the chamber 101 to produce product gas, and the final product gas is extracted under the suction action of the vacuum exhaust port 103. Chamber 101, as plasma is continuously generated and the reaction is continuously carried out, the carbon-containing organic matter in chamber 101 is continuously consumed and removed, thereby achieving efficient cleaning of chamber 101 of mirror box 10 and obtaining a cleaner vacuum chamber 101, which is conducive to preventing the light beam from being lost as much as possible during the transmission process in chamber 101; in addition, the cleaning process will not cause damage to the inner wall of chamber 101, and chamber 101 of mirror box 10 can be cleaned before installation, during use, and during subsequent maintenance.
[0047] According to some embodiments of the present invention, reference may be made to Figure 1 and Figure 2 The mirror box cleaning system 100 also includes a cleaning monitoring device 50, which is used to monitor the progress of carbon-containing organic matter removal. This allows the user to determine the cleaning process's endpoint based on the monitoring results of the cleaning monitoring device 50 and terminate the cleaning process promptly. Furthermore, the type of working gas and the design of the electrode 20 can be optimized based on the data monitored by the cleaning monitoring device 50 to achieve better cleaning results.
[0048] For example, reference may be made to Figure 1 and Figure 2 The cleaning monitoring device 50 may include a plasma spectrometer 501. The mirror box 10 is provided with an observation window 104. The plasma spectrometer 501 can monitor the plasma concentration distribution in the chamber 101 through the observation window 104. For example, the plasma spectrometer 501 is opposite to the observation window 104 to monitor the plasma concentration distribution in the chamber 101. The change in the plasma concentration distribution reflects the removal process of the carbon-containing organic matter.
[0049] It should be noted that the plasma spectrometer 501 can monitor the plasma concentration distribution, such as the oxygen ion concentration distribution, in the chamber 101 through the observation window 104. It is understandable that in the initial state, the concentration of carbon-containing organic matter in the chamber 101 is high, and oxygen ions are continuously consumed. Therefore, the oxygen ion concentration at various locations in the chamber 101 is low; as the cleaning process continues, the carbon-containing organic matter is continuously removed, and oxygen ions are continuously generated, so the oxygen ion concentration in the chamber 101 continues to increase. Therefore, by setting the plasma spectrometer 501 to monitor the plasma concentration distribution in the chamber 101, the removal process of the carbon-containing organic matter can be judged to obtain a better cleaning effect, and the removal process can be terminated in time.
[0050] Illustratively, the cleaning monitoring device 50 includes a mass spectrometer 502. A vacuum tube 601 is connected between the vacuum pumping port 103 and the vacuum source 40. The mass spectrometer 502 is connected to the vacuum tube 601. The mass spectrometer 502 extracts gas from the vacuum tube 601 and generates a mass spectrum of the gas. Changes in the gas mass spectrum reflect the progress of the carbon-containing organic matter removal. Illustratively, the vacuum tube 601 is connected to the mirror box 10 via a valve, such as an angle valve 105.
[0051] It should be noted that the carbon-containing organic matter reacts with the plasma to produce product gas. In the early stages of carbon-containing organic matter removal, due to the high concentration of carbon-containing organic matter, the concentration of the produced product gas is relatively high. Correspondingly, the concentration of the product gas entering the vacuum tube 601 is relatively high. In the later stages of carbon-containing organic matter removal, the carbon-containing organic matter gradually decreases, and the corresponding product gas produced also gradually decreases, and the concentration of the product gas entering the vacuum tube 601 decreases. Therefore, by providing a mass spectrometer 502 to extract the gas in the vacuum tube 601 and obtain a gas mass spectrum, the concentration change of the product gas can be monitored to understand the progress of carbon-containing organic matter removal, thereby achieving a better cleaning effect and terminating the removal process in a timely manner.
[0052] Exemplarily, an optical element 70 is provided in the chamber 101, and the mirror box cleaning system 100 also includes a film thickness measuring instrument 503, which is used to detect the thickness of the film layer on the surface of the optical element 70. When the film thickness measuring instrument 503 detects that the thickness of the film layer on the surface of the optical element 70 is less than the set value, the control electrode 20 stops working.
[0053] It should be noted that the plasma will react with the film layer on the surface of the optical element 70, causing the film layer on the surface of the optical element 70 to become thinner. Therefore, a film thickness measuring instrument 503 is set to detect the thickness of the film layer on the surface of the optical element 70. When the film thickness measuring instrument 503 detects that the thickness of the film layer on the surface of the optical element 70 is less than the set value, the control electrode 20 stops working, thereby avoiding the film layer on the surface of the optical element 70 being too thin and affecting the use of the optical element 70.
[0054] For example, the film thickness measuring instrument 503 may include a measuring probe 504 , which is disposed in the chamber 101 and opposite to the surface of the optical element 70 for detecting the thickness of the film on the surface of the optical element 70 .
[0055] According to some embodiments of the present invention, Figure 2 As shown, the gas source 80 includes a gas mixing chamber 801, a reaction gas source 802, and an auxiliary gas source 803. The reaction gas source 802 and the auxiliary gas source 803 are both connected to the gas mixing chamber 801. The reaction gas source 802 is used to pass the reaction gas into the gas mixing chamber 801, and the auxiliary gas source 803 is used to pass the auxiliary gas into the gas mixing chamber 801. The gas mixing chamber 801 is used to mix the reaction gas and the auxiliary gas to form a working gas. The gas mixing chamber 801 is connected to the gas inlet 102. Exemplarily, the gas mixing chamber 801 is connected to the mirror box 10 via a micro-leak valve 106.
[0056] For example, the reaction gas is oxygen and the auxiliary gas is argon; or the reaction gas is hydrogen and the auxiliary gas is argon. That is, the reaction gas and the auxiliary gas are pre-mixed in the gas mixing chamber 801 before being introduced into the chamber 101. The mixed reaction gas and auxiliary gas are ionized by the electrode 20, which has a better removal effect on carbon-containing organic matter. By providing the gas mixing chamber 801 to mix the reaction gas and auxiliary gas, the working gas introduced into the chamber 101 is more uniform, the working gas has a higher removal efficiency for carbon-containing organic matter, and the utilization rate of the working gas is higher.
[0057] According to some embodiments of the present invention, Figure 2 As shown, the gas mixing chamber 801 is connected to a vacuum suction component 804 , and the vacuum suction component 804 is used to perform a vacuum process on the gas mixing chamber 801 before charging the reaction gas and the auxiliary gas into the gas mixing chamber 801 .
[0058] Here, the vacuum suction assembly 804 can extract some impurity gases and moisture from the gas mixing chamber 801 to reduce the contamination of the reaction gas and auxiliary gas by moisture and impurity gases, thereby affecting the ratio of the reaction gas to the auxiliary gas, and reducing the interference of impurity moisture and the like on the cleaning process, thereby improving the cleaning effect. For example, the vacuum suction assembly 804 can be a molecular pump assembly, a mechanical pump assembly, etc.
[0059] According to some embodiments of the present invention, the vacuum pumping port 103 is used to extract the gas in the chamber 101 from the chamber 101 when the electrode 20 is in an operating state. In other words, the vacuum pumping port 103 can be used only to extract the gas in the chamber 101 from the chamber 101 when the electrode 20 is in an operating state. When the electrode 20 is not in an operating state, another interface can be used to vacuum the chamber 101. In this way, when it is necessary to separate the vacuum source 40 and the vacuum pumping port 103, the frequency of use of the vacuum pumping port 103 can be reduced, thereby increasing the service life of the vacuum pumping port 103.
[0060] According to some embodiments of the present invention, the vacuum port 103 is used to evacuate the chamber 101 before the electrode 20 is switched to the working state. In other words, before the plasma cleaning process is performed, the chamber 101 can be evacuated to reduce the impact of the existing gas or moisture in the chamber 101 on the cleaning process. For example, the impact of the existing gas in the chamber 101 on the working gas ratio can be reduced, thereby making the cleaning process more efficient.
[0061] In a specific embodiment, the cleaning process is as follows: first, the gas mixing chamber 801 is vacuumed, and the chamber 101 is vacuumed; the amount of argon-oxygen mixed gas is set, and the argon-oxygen mixed gas is filled into the vacuum chamber 101 through the air inlet 102; the RF source 30 is turned on, the RF parameters are set, the cleaning time is set, the electrode 20 is controlled to start glow discharge, and the cleaning of the chamber 101 is started; at the same time, the cleaning process of the carbon-containing organic matter is monitored by the plasma spectrometer 501 and the mass spectrometer 502 to determine the cleaning cutoff point.
[0062] Exemplarily, the gas mixing chamber 801, the reaction gas source 802, and the auxiliary gas source 803 can be integrated into a gas distribution cabinet 805 to form a gas source 80. Flow controllers 806 are connected between the reaction gas source 802 and the gas mixing chamber 801, and between the auxiliary gas source 803 and the gas mixing chamber 801. The mirror box cleaning system 100 also includes a control host 90. The mass spectrometer 502, the plasma spectrometer 801, the RF source 30, the flow controller 806 between the reaction gas source 802 and the gas mixing chamber 801, and the flow controller 806 between the auxiliary gas source 803 and the gas mixing chamber 801 are all communicatively connected to the control host 90. The control host 90 has a human-computer interaction interface 901 to facilitate personnel to control the mirror box cleaning system 100 through the human-computer interaction interface 901.
[0063] Exemplarily, the vacuum source 40, the control host 90, the radio frequency source 30, and the gas source 80 can be integrated together to form a cleaning cart 200. When in use, the cleaning cart 200 is connected to the mirror box 10. When not in use, the cleaning cart 200 and the mirror box 10 can be separated to reduce the impact on the normal use of the mirror box 10 and make it more flexible to use.
[0064] Throughout this specification, references to terms such as "one embodiment," "some embodiments," "illustrative embodiments," "examples," "specific examples," or "some examples" mean that the specific features, structures, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
[0065] Although the embodiments of the present invention have been shown and described, those skilled in the art will appreciate that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and purpose of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.
Claims
1. A mirror box cleaning system, characterized in that: include: A mirror box (10), the mirror box (10) having a chamber (101), the mirror box (10) being provided with an air inlet (102) and a vacuum exhaust port (103) communicating with the chamber (101); An electrode (20) is provided in the chamber (101), the electrode (20) is connected to a radio frequency source (30), the gas inlet (102) is connected to a gas source (80), the gas inlet (102) is used to introduce a working gas into the chamber (101), the electrode (20) is used to ionize the working gas to generate plasma, and the plasma is used to remove carbon-containing organic matter in the chamber (101), the vacuum pumping port (103) is connected to a vacuum source (40), and the vacuum pumping port (103) is used to extract gas from the chamber (101).
2. The mirror box cleaning system according to claim 1, characterized in that: The invention also comprises a cleaning monitoring device (50), wherein the cleaning monitoring device (50) is used to monitor the removal process of carbon-containing organic matter.
3. The mirror box cleaning system according to claim 2, characterized in that: The cleaning monitoring device (50) includes a plasma spectrometer (501), the mirror box (10) is provided with an observation window (104), and the plasma spectrometer (501) monitors the plasma concentration distribution in the chamber (101) through the observation window (104), and changes in the plasma concentration distribution reflect the removal process of the carbon-containing organic matter.
4. The mirror box cleaning system according to claim 2, characterized in that: The cleaning monitoring device (50) includes a mass spectrometer (502), a vacuum tube (601) is connected between the vacuum exhaust port (103) and the vacuum source (40), and the mass spectrometer (502) is connected to the vacuum tube (601). The mass spectrometer (502) is used to extract gas from the vacuum tube (601) and generate a mass spectrum of the gas. Changes in the mass spectrum of the gas reflect the removal process of the carbon-containing organic matter.
5. The mirror box cleaning system according to claim 1, characterized in that: An optical element (70) is provided in the chamber (101), and the mirror box (10) system further comprises a film thickness measuring instrument (503), wherein the film thickness measuring instrument (503) is used to detect the thickness of a film layer on the surface of the optical element (70), and when the film thickness measuring instrument (503) detects that the thickness of the film layer on the surface of the optical element (70) is less than a set value, the electrode (20) is controlled to stop working.
6. The mirror box cleaning system according to claim 5, characterized in that: The film thickness measuring instrument (503) comprises a measuring probe (504), which is arranged in the chamber (101) and opposite to the surface of the optical element (70) for detecting the thickness of the film layer on the surface of the optical element (70).
7. The mirror box cleaning system according to any one of claims 1 to 6, characterized in that: The gas source (80) includes a gas mixing chamber (801), a reaction gas source (802) and an auxiliary gas source (803). The reaction gas source (802) and the auxiliary gas source (803) are both connected to the gas mixing chamber (801). The reaction gas source (802) is used to pass the reaction gas into the gas mixing chamber (801). The auxiliary gas source (803) is used to pass the auxiliary gas into the gas mixing chamber (801). The gas mixing chamber (801) is used to mix the reaction gas and the auxiliary gas to form the working gas. The gas mixing chamber (801) is connected to the gas inlet (102).
8. The mirror box cleaning system according to claim 7, characterized in that: The gas mixing chamber (801) is connected to a vacuum suction component (804), and the vacuum suction component (804) is used to perform a vacuum process on the gas mixing chamber (801) before the reaction gas and the auxiliary gas are filled into the gas mixing chamber (801).
9. The mirror box cleaning system according to claim 7, characterized in that: The reaction gas includes oxygen or hydrogen, and the auxiliary gas includes argon.
10. The mirror box cleaning system according to claim 1, characterized in that: The vacuum pumping port (103) pumps gas in the chamber (101) out of the chamber (101) when the electrode (20) is in an operating state; and the vacuum pumping port (103) performs a vacuum process on the chamber (101) before the electrode (20) is switched to an operating state.