Micro-cone silicon array with nanopore structure

By forming a micro-cone silicon array with nanopore structure on the surface of the silicon wafer, the problem of poor optical absorption performance of silicon material is solved, and efficient light absorption is achieved, which is suitable for mass production.

CN223372782UActive Publication Date: 2025-09-23唐锦程
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Patent Information

Application Number
CN202422056201.5
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-08-23
Publication Date
2025-09-23
Estimated Expiration
2034-08-23

AI Technical Summary

Technical Problem

Existing silicon materials have a smooth surface and high reflectivity, resulting in poor optical absorption performance, which limits their application in optics and optoelectronics.

Method used

A micro-cone silicon array with a nanopore structure is formed on the surface of the silicon wafer, and nanopores are prepared on the conical protrusions through wet etching technology to increase the light absorption rate.

Benefits of technology

By increasing the number of times light is reflected on the silicon wafer surface, the light absorption rate is significantly improved. The process is reliable and low-cost, making it suitable for mass production.

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Abstract

The utility model relates to the technical field of micro-nano optics, in particular to a micro-cone silicon array with a nanopore structure, which comprises a silicon wafer, the surface of the silicon wafer is provided with a bulge structure, and the surface of the bulge structure is provided with nanopores; the surface of each conical protrusion is provided with the nano-hole, and micron-scale and nano-scale surface features are formed on the surface of the silicon wafer, so that the surface microstructure of the silicon wafer is more complex, the reflection frequency of light in the conical protrusion array is increased, and the light absorptivity is effectively increased.
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Description

Technical Field

[0001] The utility model relates to the technical field of micro-nano optics, in particular to a micro-cone silicon array with a nanopore structure. Background Art

[0002] Compared to general materials, materials with high optical absorption properties have lower reflectivity, effectively reducing stray light and achieving efficient light absorption and conversion, ultimately improving the performance of optical equipment and optoelectronic devices. Therefore, such materials have important scientific significance and broad application prospects in fields such as precision optical instruments, photoelectric sensors, solar cells, and photocatalysis.

[0003] Silicon, as a semiconductor material, has attracted attention due to its abundant reserves, low cost, and mature processing technology. However, the relatively smooth surface and high reflectivity of silicon make it less than ideal for light absorption, severely restricting its application in optics, optoelectronics, and other fields. To obtain silicon materials with high optical absorption properties and reduce light reflection, silicon must be processed to improve its optical properties.

[0004] Prior art, patent application CN201410196870.0 discloses a crystalline silicon surface with a cone array structure to enhance light absorption. However, the surface structure of this crystalline silicon, which only has a cone array structure, is relatively simple and has limited benefits in improving the optical absorption performance of silicon, leaving room for improvement. Utility Model Content

[0005] The purpose of the present invention is to provide a micro-cone silicon array with a nanopore structure, which can effectively increase the light absorption rate to solve the defects mentioned in the above background technology.

[0006] To achieve the above objectives, the present invention provides the following technical solutions:

[0007] A micro-cone silicon array with a nanopore structure comprises a silicon wafer, a surface of the silicon wafer is provided with a convex structure, and a surface of the convex structure is provided with nanopores.

[0008] As a preferred technical solution, the protrusion structure array is distributed on the surface of the silicon wafer.

[0009] As a preferred technical solution, the protrusion structure is a conical protrusion.

[0010] As a preferred technical solution, the adjacent conical protrusions are distributed continuously.

[0011] As a preferred technical solution, the height of the conical protrusion is 1-5 μm; the bottom diameter of the conical protrusion is 1-5 μm.

[0012] As a preferred technical solution, the conical protrusions are obtained by performing wet alkaline etching on the surface of the silicon wafer.

[0013] As a preferred technical solution, a plurality of the nanopores are distributed on the surface of the protruding structure.

[0014] As a preferred technical solution, the diameter of the nanopore is 20-150 nm.

[0015] As a preferred technical solution, the nanopores are produced by wet acid etching the surface of the protrusion structure.

[0016] Compared with the prior art, the beneficial effects of the present invention are:

[0017] (1) The surface of the conical protrusions is provided with nanopores, which form micron- and nanoscale surface features on the silicon wafer surface, making the silicon wafer surface microstructure more complex, increasing the number of light reflections in the conical protrusion array, and effectively increasing the light absorption rate;

[0018] (2) The conical protrusions and nanopores can be obtained by wet etching, respectively, with stable performance, reliable process, high efficiency, low cost, and can be mass-produced. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the following briefly introduces the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0020] Figure 1 It is a structural schematic diagram of an embodiment of the present utility model.

[0021] In the figure: 1-silicon wafer; 2-conical protrusion; 3-nanopore. DETAILED DESCRIPTION

[0022] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts are within the scope of protection of the present invention.

[0023] like Figure 1As shown, a micro-cone silicon array with a nanopore structure includes a silicon wafer 1 with a protrusion structure on its top surface. The protrusion structure is specifically micron-scale conical protrusions 2, with a height of 1-5 μm and a base diameter of 1-5 μm. The conical protrusions 2 are distributed in an array on the top surface of the silicon wafer 1, with adjacent conical protrusions 2 distributed continuously and completely covering the top surface of the silicon wafer 1. The continuously distributed conical protrusions 2 are obtained by surface modification of the silicon wafer 1 using wet alkaline etching.

[0024] The surface of the conical protrusion 2 is distributed with a number of recessed nanopores 3, forming a highly absorptive nanoscale light-trapping structure on the top surface of the silicon wafer 1. The nanopores 3 have a diameter of 20-150 nm. These nanopores 3 are created by wet acid etching the surface of the conical protrusion 2, giving it a nanoscale porous surface.

[0025] The preparation of the micro-cone silicon array with nanopore structure includes the following steps:

[0026] (1) Place the silicon wafer in a mixed solution of sodium hydroxide and isopropyl alcohol, where the mass percentage concentration of sodium hydroxide is 2.85% and the volume percentage concentration of isopropyl alcohol is 6.25%. Soak the wafer at 78°C for 35 minutes and then remove and rinse.

[0027] (2) Place the silicon wafer after the first step treatment into a mixed solution of hydrofluoric acid and hydrogen peroxide (volume ratio 1:3.5), where the concentration of hydrofluoric acid is 38% and the concentration of hydrogen peroxide is 28%. Immediately add 0.18 mL of 0.9 M chloroauric acid solution, and take it out and wash it after 3 minutes.

[0028] The above shows and describes the basic principles, main features, and advantages of the present invention. Those skilled in the art should understand that the present invention is not limited to the above embodiments. The above embodiments and descriptions are merely preferred examples of the present invention and are not intended to limit the present invention. Various changes and improvements may be made to the present invention without departing from the spirit and scope of the present invention, and such changes and improvements fall within the scope of the present invention. The scope of protection claimed in the present invention is defined by the appended claims and their equivalents.

Claims

1. A micro-cone silicon array with a nanopore structure, comprising a silicon wafer, characterized in that: The surface of the silicon wafer is provided with a protrusion structure, and the surface of the protrusion structure is provided with nanopores; The protrusion structure is a conical protrusion; A plurality of the nanopores are distributed on the surface of the protrusion structure.

2. The micro-cone silicon array with a nanopore structure according to claim 1, wherein: The protrusion structure array is distributed on the surface of the silicon wafer.

3. The micro-cone silicon array with a nanopore structure according to claim 1, wherein: The adjacent conical protrusions are distributed continuously.

4. The micro-cone silicon array with a nanopore structure according to claim 1, wherein: The height of the conical protrusion is 1-5 μm; the bottom diameter of the conical protrusion is 1-5 μm.

5. The micro-cone silicon array with a nanopore structure according to claim 1, wherein: The conical protrusions are obtained by performing wet alkali etching on the surface of the silicon wafer.

6. The micro-cone silicon array with a nanopore structure according to claim 1, wherein: The diameter of the nanopore is 20-150 nm.

7. The micro-cone silicon array with a nanopore structure according to claim 1, wherein: The nanopores are formed by performing wet acid etching on the surface of the protruding structure.

Citation Information

Patent Citations

  • Array structure fabric surface and preparing method and application thereof

    CN103956395A