Semiconductor device
By using a one-time laser marking path to form a laser marking mark on a semiconductor device, the problem of excessive marking depth caused by traditional marking methods is solved, and the integrity of the device is protected.
Patent Information
- Application Number
- CN202421738567.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Priority Date
- 2024-07-15
- Filing Date
- 2024-07-22
- Publication Date
- 2025-09-23
- Estimated Expiration
- 2034-07-22
AI Technical Summary
Conventional laser marking methods can easily lead to excessive marking depth when forming overlapping pattern lines on the surface of semiconductor devices, causing damage to the device.
The laser marking mark is formed by using a one-time laser marking path to ensure that the marking paths do not overlap with each other and avoid repeated marking.
The problem of excessive engraving depth at the overlapping areas of pattern lines is effectively avoided, thereby protecting the integrity of the semiconductor device.
Smart Images
Figure CN223378172U_ABST
Abstract
Description
Technical Field
[0001] The present application relates to a semiconductor device, and more particularly to a semiconductor device with laser-engraved markings. Background Art
[0002] In today's technologically advanced world, electronic products play an indispensable role in our lives. As demand for electronic products continues to grow, product identity tracking becomes increasingly important. One current method for tracing electronic product identity is to print markings on the semiconductor devices within them.
[0003] In order to print product names or codes on the surface of semiconductor devices, some industries use ink printing. However, ink may pose risks such as harming worker health and polluting the environment.
[0004] Therefore, some industries use laser marking to mark product names or codes on the surface of semiconductor devices. However, when using traditional laser marking methods, the laser marking is repeated at the overlapping areas of the pattern lines. As a result, the laser marking depth at the overlapping areas is deep, which can easily damage the semiconductor device.
[0005] Therefore, how to overcome the various problems of the above-mentioned prior art has become a topic that needs to be solved urgently. Utility Model Content
[0006] In view of the above-mentioned deficiencies in the prior art, the present application provides a semiconductor device, comprising: a semiconductor structure; and laser engraved marks formed on a surface of the semiconductor structure, wherein the engraved paths do not overlap with each other.
[0007] In the aforementioned semiconductor device, the semiconductor structure is a substrate, an electronic component or a packaging module.
[0008] In the aforementioned semiconductor device, the laser marking mark is formed by irradiating the surface of the semiconductor structure with laser light.
[0009] In the aforementioned semiconductor device, the laser engraving mark includes a plurality of line segments.
[0010] In the aforementioned semiconductor device, the plurality of line segments are formed by laser marking paths at one time, and the marking paths of the plurality of line segments do not overlap with each other.
[0011] In the aforementioned semiconductor device, the laser engraved mark includes uppercase English letters, lowercase English letters, Arabic numerals, text symbols or a combination thereof.
[0012] In the aforementioned semiconductor device, the plurality of line segments constituting the laser marking mark include a plurality of straight line segments, a plurality of curved line segments, or a combination of curved line segments and straight line segments.
[0013] As can be seen from the above, the semiconductor device of the present application mainly makes the laser engraving (irradiation) path a one-time path when forming the laser engraving mark, that is, its engraving paths do not overlap (intersect) with each other, so as to avoid the existing problem of repeated laser engraving at the overlapping parts of the pattern lines, resulting in a deeper laser engraving depth at the overlapping parts of the pattern lines, causing damage to the semiconductor device and other problems. BRIEF DESCRIPTION OF THE DRAWINGS
[0014] Figure 1 is a schematic cross-sectional view of the semiconductor device of the present application.
[0015] Figures 2 to 5 FIG. 1 is a schematic diagram of a laser marking mark on a semiconductor device of the present application.
[0016] Main component symbols
[0017] 1Semiconductor devices
[0018] 11Semiconductor Structure
[0019] 110 circuit layer
[0020] 111 semiconductor wafer
[0021] 112 conductive pillars
[0022] 113 first encapsulation layer
[0023] 114 line structure
[0024] 115 second semiconductor wafer
[0025] 116 second packaging layer
[0026] 12 laser engraved marks
[0027] 120 line segments
[0028] 2 Laser. DETAILED DESCRIPTION
[0029] The following describes the implementation of the present application through specific embodiments. Those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification.
[0030] It should be noted that the structures, proportions, sizes, etc. illustrated in the drawings attached to this specification are only used to match the contents disclosed in the specification for the understanding and reading of those skilled in the art, and are not used to limit the limiting conditions for the implementation of this application. Therefore, they have no substantial technical significance. Any modification of the structure, change in the proportional relationship, or adjustment of the size should still fall within the scope of the technical content disclosed in this application without affecting the efficacy and purpose that can be achieved by this application. At the same time, terms such as "on", "first", "second", "second" and "one" quoted in this specification are only for the convenience of description and are not used to limit the scope of the implementation of this application. Changes or adjustments in their relative relationships should also be regarded as the scope of the implementation of this application without substantially changing the technical content.
[0031] Figure 1 is a schematic cross-sectional view of the semiconductor device 1 of the present application.
[0032] The semiconductor device 1 includes a semiconductor structure 11 and a laser-engraved mark 12 formed on a surface of the semiconductor structure 11 .
[0033] The semiconductor structure 11 can be a substrate, an electronic component, or a packaging module.
[0034] In this embodiment, the semiconductor structure 11 is a packaging module, primarily comprising a first semiconductor chip 111 and a plurality of conductive pillars 112 electrically connected to the circuit layer 110, disposed on a circuit layer 110. The semiconductor chip 111 and the plurality of conductive pillars 112 are then encapsulated with a first packaging layer 113. Subsequently, a circuit structure 114 electrically connecting the first semiconductor chip 111 and the plurality of conductive pillars 112 is formed on the first packaging layer 113. A plurality of second semiconductor chips 115 electrically connected to the circuit structure 114 are disposed on the circuit structure 114, and the plurality of second semiconductor chips 115 are encapsulated with a second packaging layer 116.
[0035] The laser marking mark 12 is formed on a surface of the semiconductor structure 11 by irradiating the surface of the semiconductor structure 11 with a laser 2 to form the laser marking mark 12 on the surface. In this embodiment, the laser marking mark 12 is formed on the second packaging layer 116 of the packaging module by laser irradiation.
[0036] The laser-marked mark 12 includes a plurality of line segments 120, and the plurality of line segments 120 do not overlap with each other. That is, during the manufacturing process, the laser 2 forms the plurality of line segments 120 in a one-time marking path manner, and the marking paths of the plurality of line segments 120 do not overlap (intersect) with each other and do not touch each other.
[0037] Please also refer to Figures 2 to 5In this embodiment, the laser engraved mark 12 may include, for example, capital letters (such as Figure 2 As shown), lowercase English letters (such as Figure 3 As shown), Arabic numerals (such as Figure 4 As shown), text symbols (such as Figure 5 In addition, the plurality of line segments 120 constituting the laser engraved mark 12 may include a plurality of straight line segments (such as Figure 2 The capital letter A shown), multiple curve segments (such as Figure 3 The lowercase letter g shown), or a combination of curved and straight line segments (such as Figure 4 The displayed Arabic numeral 5) has many related implementation styles and is not limited to this embodiment.
[0038] In summary, the semiconductor device of the present application mainly uses a one-time laser marking (irradiation) path when forming a laser marking mark, that is, the marking paths do not overlap (intersect) with each other, so as to avoid the existing problem of repeated laser marking at the overlapping parts of the pattern lines, resulting in a deeper laser marking depth at the overlapping parts of the pattern lines, causing damage to the semiconductor device and other problems.
[0039] The above embodiments are intended to illustrate the principles and effects of this application and are not intended to limit this application. Any person skilled in the art may modify the above embodiments without departing from the spirit and scope of this application. Therefore, the scope of protection of this application shall be as set forth in the claims.
Claims
1. A semiconductor device, characterized in that: include: semiconductor structures; as well as A laser engraved mark is formed on the surface of the semiconductor structure, and the engraving paths thereof do not overlap or contact each other, wherein the laser engraved mark includes a plurality of line segments.
2. The semiconductor device according to claim 1, wherein The semiconductor structure is a substrate, an electronic component or a packaging module.
3. The semiconductor device according to claim 1, wherein The laser marking mark is formed by irradiating the surface of the semiconductor structure with laser.
4. The semiconductor device according to claim 1, wherein The plurality of line segments are formed by laser marking paths at one time, and the marking paths of the plurality of line segments do not overlap with each other.
5. The semiconductor device according to claim 1, wherein The laser engraved mark includes uppercase English letters, lowercase English letters, Arabic numerals, text symbols or a combination thereof.
6. The semiconductor device according to claim 1, wherein The plurality of line segments constituting the laser engraved mark include a plurality of straight line segments, a plurality of curved line segments, or a combination of curved line segments and straight line segments.