Deposition apparatus

Abstract

The embodiment of the utility model relates to the field of semiconductors, and provides deposition equipment, which comprises a cavity, the cavity is internally provided with a bearing table, the surface of the bearing table is provided with a placing area for placing a wafer, and the size of the placing area is the same as that of the wafer; the protection ring comprises a plurality of shielding parts which are arranged in sequence, the shielding parts are arranged on the bearing table and located on the periphery of the containing area, each shielding part comprises a main body part and a protruding part, the bottom of each main body part is movably connected with the bearing table, and each protruding part is connected with the top of the corresponding main body part and located above the edge of the containing area; the area of the area defined by the protruding parts is smaller than that of the containing area. The deposition equipment provided by the embodiment of the utility model is at least beneficial to improving the manufacturing yield of the semiconductor structure.

Description

Technical Field

[0001] The embodiments of the present application relate to the semiconductor field, and in particular to a deposition device. Background Art

[0002] Chemical vapor deposition (CVD), physical vapor deposition (PVD), and atomic layer deposition (ALD) are all commonly used thin film deposition equipment and are widely used in the manufacturing processes of integrated circuits, light-emitting diodes, and displays.

[0003] During the manufacturing process of integrated circuits, when depositing thin films on wafers, it is inevitable that thin films will grow on the sides and back of the wafer. The parts located on the sides or back of the wafer are difficult to clean, which can easily cause defects in the semiconductor structure, thereby reducing the manufacturing yield of the semiconductor structure. Utility Model Content

[0004] The embodiments of the present application provide a deposition device that is at least beneficial in improving the manufacturing yield of semiconductor structures.

[0005] According to some embodiments of the present application, on the one hand, the embodiments of the present application provide a deposition device, including: a cavity, a carrier platform is provided in the cavity, the surface of the carrier platform has a placement area for placing wafers, and the size of the placement area is the same as the size of the wafer; a protective ring, the protective ring includes a plurality of shielding members arranged in sequence, the shielding members are provided on the carrier platform, and the plurality of shielding members are located around the placement area, the shielding members include a main body and a protrusion, the bottom of the main body is movably connected to the carrier platform, the protrusion is connected to the top of the main body, the protrusion is located above the edge of the placement area, and the area of ​​the area enclosed by the protrusion is smaller than the area of ​​the placement area.

[0006] In some embodiments, it also includes: a flushing mechanism, the flushing mechanism includes a flushing channel and a flushing port, the flushing channel is located inside the shielding member, and the flushing port is located on the bottom surface of the protrusion; or, the flushing port is located on the bottom surface of the main body facing the placement area.

[0007] In some embodiments, the flushing port is located on a surface of the bottom of the main body facing the placement area, and the bottom surface of the protrusion is an inclined surface.

[0008] In some embodiments, it also includes: an air suction mechanism, the air suction mechanism includes an air suction channel and an air suction port, the air suction channel is located inside the shielding member, and the air suction channel and the flushing channel are independent of each other, the air suction port is located on the bottom surface of the protrusion, or the air suction port is located on the bottom surface of the main body facing the placement area.

[0009] In some embodiments, the flushing port is located on the bottom surface of the protrusion, and the air inlet is located on the bottom surface of the protrusion; or, the flushing port is located on the surface of the bottom of the main body facing the placement area, and the air inlet is located on the surface of the bottom of the main body facing the placement area; along the circumference of the placement area, the flushing port and the air inlet are located at different positions of the shielding member.

[0010] In some embodiments, the flushing port is located on the bottom surface of the protrusion, and the air suction port is located on the surface of the bottom of the main body facing the placement area; or, the flushing port is located on the surface of the bottom of the main body facing the placement area, and the air suction port is located on the bottom surface of the protrusion; the flushing port and the air suction port are arranged in a direction perpendicular to the surface of the support platform.

[0011] In some embodiments, the shape of the flushing port is linear, and the shape of the suction port is linear; or, there are multiple flushing ports, and the multiple flushing ports are arranged along the circumferential direction of the placement area, and there are multiple suction ports, and the multiple suction ports are arranged along the circumferential direction of the placement area.

[0012] In some embodiments, it also includes: a baffle, which is located at the bottom of the end of the protrusion away from the main body. After the wafer is placed in the placement area on the surface of the carrier platform, the bottom of the baffle contacts the surface of the wafer.

[0013] In some embodiments, the bottom of the main body is connected to the supporting platform via a rotation axis, so that the shielding member can rotate relative to the supporting platform in a direction away from the placement area along the rotation axis.

[0014] In some embodiments, a movable track is provided on the surface of the supporting platform, and the movable track extends in a direction spreading outward from the center of the placement area, and the bottom of the main body is movably fixed on the movable track.

[0015] The technical solution provided by the embodiments of the present application has at least the following advantages:

[0016] In the deposition equipment provided by the embodiment of the present application, there is a carrier platform in the chamber, and the carrier platform has a placement area for placing wafers. A plurality of shielding members are arranged around the placement area, and the shielding members are connected in sequence to form a protective ring. In this way, when the wafer is placed on the carrier platform, the protective ring surrounds the wafer. The shielding member includes a main body and a protruding portion. The bottom of the main body is movably connected to the carrier platform, and the protruding portion is connected to the top of the main body. When the wafer is placed on the carrier platform, the protruding portion is located above the edge of the wafer, and the area enclosed by the protruding portion is smaller than the area of ​​the wafer. In this way, the protective ring forms a shield for the edge area of ​​the wafer, and during the deposition process, the deposition of thin films on the edge areas of the side and back of the wafer can be avoided. The bottom of the main body is movably connected to the carrier platform. After the deposition process is completed, by moving the position of the main body relative to the carrier platform, the distance between the protruding portions of the shielding member can be adjusted so that the area enclosed by the protruding portion is larger than the area of ​​the wafer, thereby facilitating the removal of the wafer from the protective ring. The deposition equipment provided in the embodiment of the present application uses a protective ring to shield the edge area of ​​the wafer to avoid the deposition of thin films on the edge areas of the side and back of the wafer, which is beneficial to reducing the cleaning process of the edge areas of the side and back of the wafer, thereby avoiding defects in the semiconductor structure; and the protective ring does not need to be in direct contact with the wafer, which can avoid defects or discharge problems on the wafer and improve the manufacturing yield of the semiconductor structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] One or more embodiments are exemplarily illustrated by the pictures in the corresponding drawings. These exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise stated, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present application or the technical solutions in the traditional technology, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0018] Figure 1 A schematic structural diagram of a deposition device provided in an embodiment of the present application;

[0019] Figure 2 A top view of a carrier platform provided in an embodiment of the present application;

[0020] Figure 3 A partially enlarged structural schematic diagram of a carrier platform provided in an embodiment of the present application;

[0021] Figure 4 A schematic diagram of a first cross-sectional structure of a shielding member along a vertical direction in a deposition device provided in an embodiment of the present application;

[0022] Figure 5 A schematic diagram of a second cross-sectional structure of a shielding member along the vertical direction in the deposition device provided in an embodiment of the present application;

[0023] Figure 6 A schematic diagram of a third cross-sectional structure of a shielding member along the vertical direction in the deposition apparatus provided in an embodiment of the present application;

[0024] Figure 7 A schematic diagram of a fourth cross-sectional structure of a shielding member along the vertical direction in the deposition apparatus provided in an embodiment of the present application;

[0025] Figure 8 A schematic diagram of a fifth cross-sectional structure of a shielding member along the vertical direction in the deposition apparatus provided in an embodiment of the present application;

[0026] Figure 9 A schematic diagram of a cross-sectional structure of protruding portions of multiple shielding members in a deposition device provided by an embodiment of the present application along a horizontal direction;

[0027] Figure 10 A schematic cross-sectional structure diagram of the main body of multiple shielding members in the deposition equipment provided by an embodiment of the present application along the horizontal direction;

[0028] Figure 11 This is a schematic diagram of a partially enlarged structure of a shielding member in a deposition device provided in an embodiment of the present application. DETAILED DESCRIPTION

[0029] As can be seen from the background art, the manufacturing yield of semiconductor structures needs to be improved.

[0030] In the related art, a barrier ring is used to prevent the thin film from growing on the side and part of the back of the wafer. Specifically, the barrier ring is fixed in the cavity of the deposition equipment. The barrier ring is generally located in the ceramic accessory area above the wafer carrier and below the ventilation panel. After the wafer is placed on the carrier, the carrier is raised to move the wafer upward, so that the barrier ring covers the annular area of ​​the wafer 3mm to 5mm away from the outermost edge, thereby preventing the thin film from growing on the edge area of ​​the side or back of the wafer. However, the above method uses a contact method, which may cause defects or discharge problems in the wafer, thereby affecting the manufacturing yield of the semiconductor structure.

[0031] The deposition equipment provided in the embodiment of the present application uses a protective ring to shield the edge area of ​​the wafer to avoid the deposition of thin films on the edge areas of the side and back of the wafer, which is beneficial to reducing the cleaning process of the edge areas of the side and back of the wafer, thereby avoiding defects in the semiconductor structure; and the protective ring does not need to be in direct contact with the wafer, which can avoid defects or discharge problems on the wafer and improve the manufacturing yield of the semiconductor structure.

[0032] References herein to "embodiments" mean that a particular feature, structure, or characteristic described in connection with the embodiments may be included in at least one embodiment of the present application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it constitute an independent or alternative embodiment that is mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0033] In the description of the embodiments of the present application, the term "plurality" refers to more than two (including two).

[0034] In the description of the embodiments of this application, the term "and / or" is simply a description of the association relationship between associated objects, indicating that three relationships can exist. For example, A and / or B can represent the following three situations: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this document generally indicates that the associated objects are in an "or" relationship.

[0035] In the description of the embodiments of the present application, technical terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings. They are only for the convenience of describing the embodiments of the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation. Therefore, they cannot be understood as limiting the embodiments of the present application.

[0036] In the description of the embodiments of the present application, unless otherwise expressly specified or limited, technical terms such as "installed," "connected," "connected," and "fixed" should be understood in a broad sense. For example, they can refer to fixed connections, detachable connections, or integration; mechanical connections or electrical connections; direct connections or indirect connections through an intermediate medium; internal connections between two components or interactions between two components. Those skilled in the art can understand the specific meanings of the above terms in the embodiments of the present application based on specific circumstances.

[0037] In the description of the embodiments of the present application, when a component “includes” another component, unless otherwise stated, other components are not excluded, and other components may be further included.

[0038] The terms used in the description of the various embodiments described herein are for describing specific embodiments only and are not intended to be limiting. As used in the description of the various embodiments described and the appended claims, "components" are also intended to include plural forms unless the context clearly indicates otherwise.

[0039] The following detailed description of the various embodiments of the present application is provided in conjunction with the accompanying drawings. However, those skilled in the art will appreciate that many technical details are provided in the various embodiments of the present application to facilitate a better understanding of the present application. However, even without these technical details and the various variations and modifications based on the following embodiments, the technical solutions claimed in the present application can still be implemented.

[0040] Figure 1 A schematic structural diagram of a deposition device provided in an embodiment of the present application; Figure 2 A top view of a supporting platform provided in an embodiment of the present application.

[0041] refer to Figure 1 and Figure 2 The deposition apparatus provided in the embodiment of the present application includes: a chamber 101, a carrier 102 is provided in the chamber 101, a surface of the carrier 102 has a placement area 112 for placing a wafer 10, and the size of the placement area 112 is the same as the size of the wafer 10; a protective ring 103, the protective ring 103 includes a plurality of shielding members 113 arranged in sequence, the shielding members 113 are provided on the carrier 102, and the plurality of shielding members 113 are located around the placement area 112, and the shielding members 113 include a plurality of shielding members 113 arranged in sequence, and the plurality of shielding members 113 are located around the placement area 112, and the shielding members 113 include a plurality of shielding members 113 arranged in sequence, and the plurality of shielding members 113 are located around the placement area 112, and the shielding members 113 include a plurality of shielding members 113 arranged in sequence, and the plurality of shielding members 113 are located around the placement area 112, and the plurality of ... It includes a main body 123 and a protrusion 133. The bottom of the main body 123 is movably connected to the carrier 102, and the protrusion 133 is connected to the top of the main body 123. The protrusion 133 is located above the edge of the placement area 112, and the area enclosed by the protrusion 133 is smaller than the area of ​​the placement area 112. That is, when the wafer 10 is placed on the carrier 102, the protrusion 133 is located above the edge of the wafer 10, and the area enclosed by the protrusion 133 is smaller than the area of ​​the wafer 10.

[0042] In the deposition equipment provided in the embodiment of the present application, a carrier platform 102 is provided in the cavity 101, and a placement area 112 for placing the wafer 10 is provided on the carrier platform 102. A plurality of shielding members 113 are arranged around the placement area 112, and the shielding members 113 are connected in sequence to form a protective ring 103. In this way, when the wafer 10 is placed on the carrier platform 102, the protective ring 103 surrounds the wafer 10. Among them, the shielding member 113 includes a main body 123 and a protrusion 133. The bottom of the main body 123 is movably connected to the carrier 102, and the protrusion 133 is connected to the top of the main body 123. When the wafer 10 is placed on the carrier 102, the protrusion 133 is located above the edge of the wafer 10, and the area of ​​the area enclosed by the protrusion 133 is smaller than the area of ​​the wafer 10, so that the protective ring 103 forms a shield for the edge area of ​​the wafer 10. During the deposition process, the deposition of thin films on the edge areas of the side and back of the wafer 10 can be avoided; the bottom of the main body 123 is movably connected to the carrier 102. After the deposition process is completed, by moving the position of the main body 123 relative to the carrier 102, the distance between the protrusions 133 of the multiple shielding members 113 can be easily adjusted so that the area of ​​the area enclosed by the protrusion 133 is larger than the area of ​​the wafer 10, thereby facilitating the removal of the wafer 10 from the protective ring 103. The deposition equipment provided in the embodiment of the present application forms a shield for the edge area of ​​the wafer 10 through the protective ring 103 to avoid the deposition of thin films on the edge areas of the side and back sides of the wafer 10, which is beneficial to reducing the cleaning process of the edge areas of the side and back sides of the wafer 10, thereby avoiding defects in the semiconductor structure; and the protective ring 103 does not need to be in direct contact with the wafer 10, which can avoid defects or discharge problems in the wafer 10 and improve the manufacturing yield of the semiconductor structure.

[0043] It should be noted that, in the drawings provided in this embodiment, the number of shielding members 113 is 4 as an example, which does not constitute a limitation on the number of shielding members 113. In other embodiments, the number of shielding members may be 2, 4, 6, or 10, etc.

[0044] Figure 3 A schematic diagram of a partially enlarged structure of a carrier platform provided in an embodiment of the present application.

[0045] refer to Figure 3The distance W between the main body 123 and the edge of the placement area 112 is greater than 0 and less than or equal to 5 mm, and can be, for example, 0.2 mm, 0.5 mm, 1 mm, 1.3 mm, 1.8 mm, 2 mm, 2.6 mm, 3 mm, 3.4 mm, 4 mm, 4.5 mm, or 5 mm. Thus, when the wafer 10 is placed on the placement area 112, the distance W between the edge of the wafer 10 and the main body 123 is greater than 0 and less than or equal to 5 mm, thereby preventing the main body 123 from directly contacting the side of the wafer 10 while keeping the distance between the main body 123 and the wafer 10 not too large, so that the shielding member 113 can shield a local area of ​​the edge of the wafer 10.

[0046] refer to Figure 3 In a direction parallel to the surface of the carrier 102, the minimum distance L between the side surface of the protrusion 133 away from the main body 123 and the edge of the placement area 112 is 1 mm to 5 mm, for example, 1 mm, 1.3 mm, 1.8 mm, 2 mm, 2.6 mm, 3 mm, 3.4 mm, 4 mm, 4.5 mm, or 5 mm. Thus, when the wafer 10 is placed on the placement area 112, the width of the protrusion 133 extending above the edge of the wafer 10 is appropriate, so that the protrusion 133 can shield the edge of the wafer 10 while avoiding affecting film formation in the center area of ​​the wafer 10.

[0047] refer to Figure 3 After the wafer 10 is placed in the placement area 112 on the surface of the carrier 102, the distance H between the bottom surface of the protrusion 133 and the top surface of the wafer 10 is 5mm to 40mm, for example, it can be 5mm, 8mm, 10mm, 15mm, 20mm, 26mm, 30mm, 34mm or 40mm.

[0048] Figure 4 A schematic diagram of a first cross-sectional structure of a shielding member along a vertical direction in a deposition device provided in an embodiment of the present application; Figure 5 This is a schematic diagram of a second cross-sectional structure of a shielding member along the vertical direction in the deposition equipment provided in an embodiment of the present application.

[0049] refer to Figure 4 and Figure 5 The deposition device may include: a flushing mechanism 104, the flushing mechanism 104 including a flushing channel 114 and a flushing port 124. Figure 4 , the flushing channel 114 is located inside the shielding member 113, and the flushing port 124 can be located on the bottom surface of the protrusion 133; or, refer to Figure 5The flushing channel 114 is located inside the shielding member 113, and the flushing port 124 can be located at the bottom of the main body 123 facing the surface of the placement area 112. That is, the flushing port 124 is located at the bottom of the main body and faces the surface of the wafer 10. In this way, the flushing mechanism 104 can be used to provide flushing gas to the edge of the wafer 10. The flushing of the flushing mechanism 104 can prevent the reaction gas from stagnating at the edge of the wafer 10, thereby preventing the formation of unnecessary film layers on the side and back edge areas of the wafer 10.

[0050] For example, the flushing gas can be an inert gas that does not participate in the reaction, such as nitrogen, helium, or argon.

[0051] In some embodiments, the flushing gas may be discharged in a pulsed manner.

[0052] In some embodiments, the flow rate of the flushing gas may be 1000 cm 3 / min~100000cm 3 / min, for example 1000cm 3 / min、5000cm 3 / min、15000cm 3 / min、20000cm 3 / min、80000cm 3 / min or 100000cm 3 / min.

[0053] Figure 6 This is a schematic diagram of a third cross-sectional structure of a shielding member along the vertical direction in the deposition equipment provided in an embodiment of the present application.

[0054] In some embodiments, the deposition apparatus includes a flushing mechanism 104, and the flushing channel 114 is located within the shield 113. When the flushing port 124 is located at the bottom of the main body and faces the surface of the placement area 112, the bottom surface of the protrusion 133 may be an inclined surface. This facilitates the flushing gas to be directed to areas outside the edge region of the wafer 10 through the inclined surface, thereby avoiding affecting the local pressure at the edge region of the wafer 10.

[0055] Figure 7 A schematic diagram of a fourth cross-sectional structure of a shielding member along the vertical direction in the deposition apparatus provided in an embodiment of the present application; Figure 8 A schematic diagram of a fifth cross-sectional structure of a shielding member along the vertical direction in the deposition apparatus provided in an embodiment of the present application; Figure 9 A schematic diagram of a cross-sectional structure of protruding portions of multiple shielding members in a deposition device provided by an embodiment of the present application along a horizontal direction; Figure 10 This is a schematic diagram of the cross-sectional structure of the main body of multiple shielding members in the deposition equipment provided in an embodiment of the present application along the horizontal direction.

[0056] refer to Figures 7 to 10 The deposition apparatus may include a flushing mechanism 104 and an air suction mechanism 105. The air suction mechanism 105 includes an air suction channel 115 and an air suction port 125. The air suction channel 115 is located inside the shielding member 113 and is independent of the flushing channel 114. The flushing mechanism 104 and the air suction mechanism 105 can form a local airflow circulation at the edge of the wafer 10, thereby preventing the reaction gas from stagnating at the edge of the wafer 10, thereby preventing the formation of unnecessary film layers at the edge of the side and back of the wafer 10.

[0057] refer to Figure 7 When the rinse port 124 is located at the bottom surface of the protrusion 133 and the air intake port 125 is located at the bottom of the main body 123 facing the surface of the placement area 112 (or wafer 10), the rinse port 124 and the air intake port 125 can be arranged in a direction perpendicular to the surface of the carrier 102.

[0058] refer to Figure 8 When the rinse port 124 is located at the bottom of the main body 123 facing the surface of the placement area 112 (or the wafer 10), and the suction port 125 is located on the bottom surface of the protrusion 133, the rinse port 124 and the suction port 125 can be arranged in a direction perpendicular to the surface of the carrier 102.

[0059] refer to Figure 9 When the flushing port 124 is located at the bottom surface of the protrusion 133 and the air inlet 125 is located at the bottom surface of the protrusion 133, the flushing port 124 and the air inlet 125 are located at different positions of the shielding member along the circumferential direction of the placement area (or wafer).

[0060] refer to Figure 10 When the flushing port 124 is located at the bottom of the main body 123 facing the surface of the placement area (or wafer), and the air intake port 125 is located at the bottom of the main body 123 facing the surface of the placement area (or wafer), in the circumferential direction of the placement area (or wafer), the flushing port 124 and the air intake port 125 are located at different positions of the shielding member.

[0061] In some embodiments, the shape of the flushing port is linear, and the shape of the suction port is linear. Figure 7 or Figure 8 When the flushing port 124 and the air intake port 125 are arranged in a direction perpendicular to the surface of the carrier 102, the flushing port 124 can extend along the length direction of the shielding member 113, and the air intake port 125 can extend along the length direction of the shielding member 113 to form a local airflow circulation in the annular area of ​​the entire edge of the wafer 10.

[0062] In some embodiments, there are multiple flushing ports, which are arranged along the circumferential direction of the placement area, and there are multiple suction ports, which are arranged along the circumferential direction of the placement area. Figure 9 or Figure 10 When the flushing port 124 and the air inlet 125 are located at different positions of the shielding member, the flushing port 124 and the air inlet 125 can be arranged alternately.

[0063] Figure 11 This is a schematic diagram of a partially enlarged structure of a shielding member in a deposition device provided in an embodiment of the present application.

[0064] refer to Figure 11 The deposition device may further include: a baffle 106, which is located at the bottom of the end of the protrusion 133 away from the main body 123. After the wafer 10 is placed in the placement area 112 on the surface of the carrier 102, the bottom of the baffle 106 contacts the surface of the wafer 10. The baffle 106 can be made of a high-temperature resistant and low-hardness material such as silicone, fluororubber or polyimide, so as to avoid the problem of the baffle 106 causing damage to the wafer 10. The baffle 106 and the shielding member 113 can form a relatively closed space at the edge area of ​​the wafer 10 to prevent the reaction gas from gathering at the edge area of ​​the wafer 10, thereby preventing the deposition of film layers on the side and back edge areas of the wafer 10.

[0065] In some embodiments, reference Figures 4 to 8 as well as Figure 11 The bottom of the main body 123 is connected to the carrier 102 through the rotating shaft 107, so that the shielding member 113 can rotate relative to the carrier 102 along the rotating shaft 107 in a direction away from the placement area 112 (or wafer 10) to facilitate the removal and placement of the wafer 10.

[0066] In some embodiments, a movable track is provided on the surface of the carrier, and the movable track extends in a direction spreading outward from the center of the placement area, and the bottom of the main body is movably fixed on the movable track to facilitate the removal and placement of the wafer.

[0067] refer to Figure 1 In some embodiments, the deposition apparatus may include a radio frequency (RF) power supply 108 and / or a remote plasma source (RPS) 109. The RF power supply 108 is used to provide the electric field required to form the plasma. The RPS 109 is used to convert the gas into a plasma state.

[0068] refer to Figure 1In some embodiments, the deposition device may include: an air inlet 110, a guide plate 120 and an air outlet 130. The air inlet 110 is used to transport the reaction gas into the cavity 101. The guide plate 120 can divert the reaction gas so that the reaction gas is evenly dispersed. The air outlet 130 is used to discharge by-products and waste gas generated during the film deposition process in the cavity 101.

[0069] refer to Figure 1 In some embodiments, the deposition device may include: a ceramic kit 140 , which is located on the inner wall of the cavity 101 and is used to protect the cavity 101 .

[0070] The deposition equipment may be a chemical vapor deposition equipment, a physical vapor deposition equipment, an atomic layer deposition equipment, or a plasma chemical vapor deposition equipment.

[0071] In the deposition equipment provided in the embodiment of the present application, a carrier platform 102 is provided in the cavity 101, and a placement area 112 for placing the wafer 10 is provided on the carrier platform 102. A plurality of shielding members 113 are arranged around the placement area 112, and the shielding members 113 are connected in sequence to form a protective ring 103. In this way, when the wafer 10 is placed on the carrier platform 102, the protective ring 103 surrounds the wafer 10. Among them, the shielding member 113 includes a main body 123 and a protrusion 133. The bottom of the main body 123 is movably connected to the carrier 102, and the protrusion 133 is connected to the top of the main body 123. When the wafer 10 is placed on the carrier 102, the protrusion 133 is located above the edge of the wafer 10, and the area of ​​the area enclosed by the protrusion 133 is smaller than the area of ​​the wafer 10. In this way, the protective ring 103 forms a shield for the edge area of ​​the wafer 10. During the deposition process, the deposition of thin films on the edge areas of the side and back of the wafer 10 can be avoided; the bottom of the main body 123 is movably connected to the carrier 102. After the deposition process is completed, by moving the position of the main body 123 relative to the carrier 102, the distance between the protrusions 133 of the shielding member 113 can be easily adjusted so that the area of ​​the area enclosed by the protrusion 133 is larger than the area of ​​the wafer 10, thereby facilitating the removal of the wafer 10 from the protective ring 103. The deposition equipment provided in the embodiment of the present application forms a shield for the edge area of ​​the wafer 10 through the protective ring 103 to avoid the deposition of thin films on the edge areas of the side and back sides of the wafer 10, which is beneficial to reducing the cleaning process of the edge areas of the side and back sides of the wafer 10, thereby avoiding defects in the semiconductor structure; and the protective ring 103 does not need to be in direct contact with the wafer 10, which can avoid defects or discharge problems in the wafer 10 and improve the manufacturing yield of the semiconductor structure.

[0072] Those skilled in the art will appreciate that the above-described embodiments are specific examples for implementing the present application, and that in actual applications, various changes in form and detail may be made thereto without departing from the spirit and scope of the present application. Any person skilled in the art may make various changes and modifications without departing from the spirit and scope of the present application. Therefore, the scope of protection of the present application shall be based on the scope defined in the claims.

Claims

1. A deposition device, characterized in that: include: A cavity, wherein a carrying platform is provided in the cavity, and a surface of the carrying platform has a placement area for placing a wafer, and the size of the placement area is the same as the size of the wafer; A protective ring, wherein the protective ring includes a plurality of shielding members arranged in sequence, the shielding members are arranged on the supporting platform, and the plurality of shielding members are located around the placement area, the shielding member includes a main body and a protruding portion, the bottom of the main body is movably connected to the supporting platform, the protruding portion is connected to the top of the main body, the protruding portion is located above the edge of the placement area, and the area enclosed by the protruding portion is smaller than the area of ​​the placement area.

2. The deposition device according to claim 1, characterized in that Also includes: a flushing mechanism, the flushing mechanism comprising a flushing channel and a flushing port, the flushing channel being located inside the shielding member, and the flushing port being located on the bottom surface of the protruding portion; Alternatively, the flushing port is located on a surface of the bottom of the main body facing the placement area.

3. The deposition device according to claim 2, characterized in that The flushing port is located on the bottom surface of the main body facing the placement area, and the bottom surface of the protruding portion is an inclined surface.

4. The deposition device according to claim 2, characterized in that Also includes: An air suction mechanism includes an air suction channel and an air suction port. The air suction channel is located inside the shielding member, and the air suction channel and the flushing channel are independent of each other. The air suction port is located on the bottom surface of the protrusion, or the air suction port is located on the bottom surface of the main body facing the placement area.

5. The deposition device according to claim 4, characterized in that The flushing port is located on the bottom surface of the protruding portion, and the air inlet is located on the bottom surface of the protruding portion; Alternatively, the flushing port is located on a surface of the bottom of the main body facing the placement area, and the air inlet is located on a surface of the bottom of the main body facing the placement area; Along the circumference of the placement area, the flushing port and the air inlet are located at different positions of the shielding member.

6. The deposition apparatus according to claim 4, wherein: The flushing port is located on the bottom surface of the protruding portion, and the air inlet is located on the bottom surface of the main body facing the placement area; Alternatively, the flushing port is located on the bottom surface of the main body facing the placement area, and the air inlet is located on the bottom surface of the protruding portion; The flushing port and the air suction port are arranged in a direction perpendicular to the surface of the supporting platform.

7. The deposition apparatus according to claim 6, wherein: The shape of the flushing port is linear, and the shape of the air intake port is linear; Alternatively, there are multiple flushing ports, and the multiple flushing ports are arranged along the circumferential direction of the placement area; there are multiple air intake ports, and the multiple air intake ports are arranged along the circumferential direction of the placement area.

8. The deposition apparatus according to claim 1, wherein: Also includes: The baffle is located at the bottom of the end of the protrusion away from the main body. After the wafer is placed in the placement area on the surface of the carrier platform, the bottom of the baffle contacts the surface of the wafer.

9. The deposition apparatus according to claim 1, wherein: The bottom of the main body is connected to the supporting platform via a rotating shaft, so that the shielding member can rotate relative to the supporting platform along the rotating shaft in a direction away from the placement area.

10. The deposition apparatus according to claim 1, wherein: A movable track is provided on the surface of the carrying platform. The movable track extends in a direction spreading outward from the center of the placement area. The bottom of the main body is movably fixed on the movable track.

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