Light-emitting device structure capable of improving focusing

Abstract

The utility model relates to a light-emitting device structure capable of improving focusing. The light-emitting device structure comprises a light-emitting device composed of a first semiconductor layer, a second semiconductor layer and an active layer. The active layer is located between the first semiconductor layer and the second semiconductor layer; the first conductive layer is in ohmic contact with the second semiconductor layer; the reflecting layer is electrically connected with the first conductive layer; the second conductive layer is electrically connected with the reflecting layer; the third conductive layer is electrically connected with the second conductive layer; the third insulating layer covers part of the surface of the electrode and is partially exposed out of the light-emitting device; and the light absorption layer covers most of the surface of the third insulating layer, is positioned in the non-essential light-emitting area and absorbs stray light emitted from the non-essential light-emitting area. The light absorption layer absorbs stray light, the stray light is reduced, light sources in a light-emitting area are more concentrated and focused, and therefore the light-emitting efficiency of the device is improved.

Description

Technical Field

[0001] The utility model relates to the technical field of semiconductor lasers, in particular to a light-emitting device structure with improved focusing. Background Art

[0002] The P / N conduction path in the LED chip is to set up multiple regularly arranged depressions in the light-emitting area, realize the current flow from P to N through the reflective layer and conductive layer of the multi-metal design, and then isolate P and N through the insulating layer to prevent direct conduction and cause short circuit, thereby achieving luminescence.

[0003] Existing light-emitting devices are composed of a first semiconductor layer, a second semiconductor layer and an active layer. The photons emitted by the active layer are emitted with equal probability in all directions. When it is necessary to focus the light on a specific area, the light extraction efficiency needs to be improved through a reflective layer structure. The light extraction needs to be restricted in the area without a reflective layer. The utility model proposes a light-emitting device structure that improves focusing, reduces the generation of stray light, and makes the light source in the light-emitting area more concentrated. Utility Model Content

[0004] Based on the technical problems existing in the background technology, the present invention proposes a light-emitting device structure with improved focusing, which reduces the generation of stray light and makes the light source in the light-emitting area more concentrated.

[0005] The utility model provides a light-emitting device structure with improved focusing, comprising a light-emitting device composed of a first semiconductor layer, a second semiconductor layer, and an active layer; the active layer is located between the first semiconductor layer and the second semiconductor layer; a first conductive layer forming an ohmic contact with the second semiconductor layer, a reflective layer forming an electrical connection with the first conductive layer, a second conductive layer forming an electrical connection with the reflective layer, a third conductive layer forming an electrical connection with the second conductive layer, and a conductive substrate electrically connected to the third conductive layer, wherein the first conductive layer, the reflective layer, the second conductive layer, the third conductive layer, and the conductive substrate together constitute a first electrical connection layer; a first insulating layer covering the surface of the second semiconductor layer and partially exposed on both sides of the second semiconductor layer, a second insulating layer covering the surface and sidewalls of the first semiconductor layer; an electrode that is mostly in contact with the surface of the second insulating layer and is electrically connected to the first semiconductor layer, the electrode being the second electrical connection layer; a third insulating layer covering a portion of the surface of the electrode and partially exposed outside the light-emitting device; and a light-absorbing layer covering most of the surface of the third insulating layer, wherein the light-absorbing layer is located in a non-essential light-emitting region and absorbs stray light emitted from the non-essential light-emitting region.

[0006] Preferably, the first conductive layer and the reflective layer are embedded in the first insulating layer, and the reflective layer is a multi-layer structure, and the electrode is also a multi-layer structure.

[0007] Preferably, the light emitting device is arranged in the second insulating layer, and a light emitting area not covered by the light absorbing layer is provided between the electrode and the light emitting device.

[0008] Preferably, the light absorbing layer comprises indium tin oxide, titanium, titanium tungsten and alloys thereof.

[0009] Preferably, the second conductive layer and the third conductive layer are multi-layer metal structures.

[0010] The beneficial effects of the present invention are as follows: a light-absorbing layer is plated on the third insulating layer in the non-luminous area to absorb stray light, reduce stray light generation, and make the light source in the luminous area more concentrated, thereby improving the luminous efficiency of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 This is a structural schematic diagram of a light-emitting device structure with improved focusing proposed by the present invention.

[0012] Figure 2 This is a top view of the light-emitting area of ​​the utility model.

[0013] In the figure: 1. first semiconductor layer, 2. second semiconductor layer, 3. active layer, 4. first conductive layer, 5. reflective layer, 6. second insulating layer, 7. first insulating layer, 8. second conductive layer, 9. third conductive layer, 10. conductive substrate, 11. electrode, 12. third insulating layer, 13. light-absorbing layer. DETAILED DESCRIPTION

[0014] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0015] Reference Figure 1-2 , a light emitting device structure with improved focusing, comprising a light emitting device consisting of a first semiconductor layer 1, a second semiconductor layer 2 and an active layer 3; the active layer 3 is located between the first semiconductor layer 1 and the second semiconductor layer 2;

[0016] A first conductive layer 4 forming an ohmic contact with the second semiconductor layer 2, a reflective layer 5 forming an electrical connection with the first conductive layer 4, wherein the reflective layer 5 is a multi-layer structure, a second conductive layer 8 forming an electrical connection with the reflective layer 5, a third conductive layer 9 forming an electrical connection with the second conductive layer 8, and a conductive substrate 10 electrically connected to the third conductive layer 9. The first conductive layer 4, the reflective layer 5, the second conductive layer 8, the third conductive layer 9, and the conductive substrate 10 together constitute a first electrically connected layer; wherein the second conductive layer 8 and the third conductive layer 9 are a multi-layer metal structure.

[0017] a first insulating layer 7 covering the surface of the second semiconductor layer 2 and partially exposed on both sides of the second semiconductor layer 2, and a second insulating layer 6 covering the surface and sidewalls of the first semiconductor layer 1;

[0018] The electrode 11 , which is mostly in contact with the surface of the second insulating layer 6 and forms an electrical connection with the first semiconductor layer 1 , is a second electrical connection layer; the electrode 11 also has a multi-layer structure.

[0019] a third insulating layer 12 covering a portion of the surface of the electrode 11 and partially exposed to the outside of the light-emitting device;

[0020] A light absorbing layer 13 covers most of the surface of the third insulating layer 12 , wherein the light absorbing layer 13 is located in the non-essential light emitting area and absorbs stray light emitted from the non-essential light emitting area. The light absorbing layer 13 includes indium tin oxide, titanium, titanium tungsten and alloys thereof.

[0021] The first conductive layer 4 and the reflective layer 5 are embedded in the first insulating layer 7, the light emitting device is arranged in the second insulating layer 6, and a light emitting area not covered by the light absorbing layer is provided between the electrode 11 and the light emitting device. Figure 2 As shown, the non-luminous area absorbs stray light, reducing the generation of stray light, making the light source in the luminous area more concentrated and focused, thereby improving the luminous efficiency of the device.

[0022] Preferably, the above is only a preferred specific implementation method of the present invention, but the protection scope of the present invention is not limited to this. Any technician familiar with the technical field within the technical scope disclosed by the present invention, who makes equivalent replacements or changes based on the technical solution and utility model concept of the present invention, should be covered by the protection scope of the present invention.

Claims

1. A light-emitting device structure with improved focusing, comprising a light-emitting device composed of a first semiconductor layer (1), a second semiconductor layer (2) and an active layer (3); the active layer (3) is located between the first semiconductor layer (1) and the second semiconductor layer (2); characterized in that: a first conductive layer (4) forming an ohmic contact with the second semiconductor layer (2), a reflective layer (5) forming an electrical connection with the first conductive layer (4), a second conductive layer (8) forming an electrical connection with the reflective layer (5), a third conductive layer (9) forming an electrical connection with the second conductive layer (8), and a conductive substrate (10) electrically connected with the third conductive layer (9); the first conductive layer (4), the reflective layer (5), the second conductive layer (8), the third conductive layer (9), and the conductive substrate (10) together forming a first electrical connection layer; a first insulating layer (7) covering the surface of the second semiconductor layer (2) and partially exposed on both sides of the second semiconductor layer (2), and a second insulating layer (6) covering the surface and sidewalls of the first semiconductor layer (1); An electrode (11) that is mostly in contact with the surface of the second insulating layer (6) and forms an electrical connection with the first semiconductor layer (1), the electrode (11) being a second electrical connection layer; a third insulating layer (12) covering a portion of the surface of the electrode (11) and partially exposed to the outside of the light-emitting device; A light absorbing layer (13) covers most of the surface of the third insulating layer (12), wherein the light absorbing layer (13) is located in the non-essential light emitting area and absorbs stray light emitted from the non-essential light emitting area.

2. A light emitting device structure with improved focusing according to claim 1, characterized in that: The first conductive layer (4) and the reflective layer (5) are embedded in the first insulating layer (7), and the reflective layer (5) is a multi-layer structure, and the electrode (11) is also a multi-layer structure.

3. The light emitting device structure with improved focusing according to claim 1, characterized in that: The light-emitting device is arranged in the second insulating layer (6), and a light-emitting area not covered by the light-absorbing layer is provided between the electrode (11) and the light-emitting device.

4. The light emitting device structure with improved focusing according to claim 1, characterized in that: The light absorbing layer (13) comprises indium tin oxide, titanium, titanium tungsten and alloys thereof.

5. The light emitting device structure with improved focusing according to claim 1, characterized in that: The second conductive layer (8) and the third conductive layer (9) are multi-layer metal structures.

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