Plasma etching device
By using a rotating and moving device in a plasma etching device to adjust the position and magnetic field of the coil, the problem of uneven plasma concentration is solved, a more uniform etching effect is achieved, and the yield and etching quality of semiconductor devices are improved.
Patent Information
- Application Number
- CN202422042846.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-08-21
- Publication Date
- 2025-10-14
- Estimated Expiration
- 2034-08-21
AI Technical Summary
The plasma concentration in the processing chamber of the existing plasma etching device is uneven, resulting in inconsistent etching effects on semiconductor devices and affecting the yield.
A rotating and moving device is used to drive the first and second coils to rotate and move around the axis, adjust the magnetic field distribution in the processing chamber, make the plasma concentration uniform, and adjust the magnetic field strength by controlling the distance between the coil and the chamber wall to ensure etching uniformity.
The uniformity of plasma concentration in the processing chamber is achieved, the etching yield of semiconductor devices is improved, the consistency of the inclination of the channel holes is ensured, and the quality of the devices is improved.
Smart Images
Figure CN223436486U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The present application relates to the technical field of semiconductor chip, and particularly relates to a plasma etching device. BACKGROUND
[0002] NAND (Not-AND) memory is a kind of non-volatile memory, which can retain stored data without power supply. The growing demand for consumer electronics, cloud computing and big data has brought a continuous demand for larger capacity and better performance of NAND memory. As the conventional two-dimensional (2D) NAND memory approaches its physical limit, three-dimensional (3D) NAND memory is now playing an important role.
[0003] The semiconductor device needs to be etched in a reaction chamber before being made into a three-dimensional (3D) NAND memory. SUMMARY
[0004] Embodiments of the present application provide a plasma etching device, which aims to improve the yield of semiconductor devices.
[0005] To achieve the above-mentioned purpose, embodiments of the present application adopt the following technical solutions:
[0006] Embodiments of the present application provide a plasma etching device, which includes a processing chamber, a first coil and a rotating device. The processing chamber is provided with a first chamber wall. The processing chamber can generate plasma for etching. The first coil is located outside the processing chamber. The first coil has a first axis, which is perpendicular to the first chamber wall. The rotating device is connected with the first coil. The rotating device is used to drive the first coil to rotate around the first axis.
[0007] In some embodiments, the plasma etching device further includes a moving device. The moving device is connected with the first coil. The moving device is used to drive the first coil to move along the first axis.
[0008] In some embodiments, the rotating device includes a stator and a rotor. The moving device includes a slide rail and a first sliding block. The first sliding block is arranged on the slide rail. The length direction of the slide rail is collinear with the first axis. The rotor is connected with one end of the slide rail. The relative position between the stator and the first chamber wall is fixed. The first sliding block is connected with the first coil.
[0009] In some embodiments, the moving device further includes a first connecting rod. The first connecting rod connects the first sliding block with the first coil.
[0010] In some embodiments, a plurality of first connecting rods are arranged. The first connecting rod has a first included angle between adjacent two first connecting rods.
[0011] In some embodiments, the plasma etching device further includes a second coil having a second axis that is collinear with the first axis; the moving device further includes a second slider disposed on the slide rail and connected to the second coil.
[0012] In some embodiments, the moving device further includes a second connecting rod connecting the second slider and the second coil.
[0013] In some embodiments, a plurality of second connecting rods are provided, and a second angle is formed between two adjacent second connecting rods.
[0014] In some embodiments, the first slider and the second slider are an integral structure.
[0015] In some embodiments, the second coil is located on a side of the first coil away from the first chamber wall;
[0016] In other embodiments, the first coil is located on a side of the second coil away from the first chamber wall;
[0017] In some further embodiments, along a direction perpendicular to the first chamber wall, a distance from the first coil to the first chamber wall is the same as a distance from the second coil to the first chamber wall. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] To more clearly illustrate the technical solutions of this application, the following briefly introduces the drawings required for use in some embodiments of this application. Obviously, the drawings described below are only drawings of some embodiments of this application, and those skilled in the art can also derive other drawings based on these drawings. Furthermore, the drawings described below are schematic diagrams and are not intended to limit the actual dimensions of the products, actual processes of the methods, actual timing of signals, and the like involved in the embodiments of this application.
[0019] Figure 1 Schematic diagram of the structure of the plasma etching device in some embodiments of the present application Figure 1 ;
[0020] Figure 2 Schematic diagram of the structure of the plasma etching device in some embodiments of the present application Figure 2 ;
[0021] Figure 3 This is a schematic diagram of the connection between the first coil and the first connecting rod in some embodiments of the present application, or a schematic diagram of the connection between the second coil and the second connecting rod in some embodiments of the present application;
[0022] Figure 4 Schematic diagram of the structure of the plasma etching device in some embodiments of the present application Figure 3 . DETAILED DESCRIPTION
[0023] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are only some of the embodiments of the present application, but not all of them. Based on the embodiments provided by the present application, all other embodiments obtained by those of ordinary skill in the art belong to the scope of protection of the present application.
[0024] In the description of the present application, it should be understood that the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like indicate the orientation or positional relationship shown in the drawings based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as limiting the present application.
[0025] Unless otherwise required by the context, in the entire specification and claims of the present application, the term "comprising" is interpreted to mean "including, but not limited to". In the description of the specification, the terms "one embodiment", "some embodiments", "exemplary embodiment", "exemplarily" or "some examples" and the like are intended to mean that a particular feature, structure, material or characteristic included in at least one embodiment or example of the present application. The illustrative representation of the above terms does not necessarily mean the same embodiment or example. In addition, the specific features, structures, materials or characteristics described can be included in any one or more embodiments or examples in any appropriate manner.
[0026] Hereinafter, the terms "first", "second" are only used for description purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more features. In the description of the embodiments of the present application, unless otherwise stated, the meaning of "multiple" is two or more.
[0027] In describing some embodiments, "coupled" and "connected" and their derivatives can be used. For example, the term "connected" can be used to describe some embodiments to indicate that two or more components have direct physical or electrical contact with each other. For another example, the term "coupled" can be used to describe some embodiments to indicate that two or more components have direct physical or electrical contact with each other. However, the term "coupled" can also mean that two or more components have no direct contact with each other, but still cooperate or interact with each other. The embodiments disclosed herein are not necessarily limited by the content herein.
[0028] “A, B, and C at least one of” has the same meaning as “at least one of A, B, or C,” each including the following combinations: A only, B only, C only, a combination of A and B, a combination of A and C, a combination of B and C, and a combination of A, B, and C.
[0029] “A and / or B” includes the following three combinations: A only, B only, and a combination of A and B.
[0030] The use of “adapted to” or “configured to” herein means open and inclusive language that does not exclude additional devices or steps not explicitly described.
[0031] In addition, the use of “based on” means open and inclusive, as a process, step, calculation, or other action that is “based on” one or more stated conditions or values can in practice be based on additional conditions or values beyond those stated.
[0032] In the context of this application, the meanings of “on,” “over,” and “above” should be construed in the broadest sense consistent with the context, so that “on” means not only “directly on” but also “on” an intermediate feature or layer, and “over” or “above” means not only “over” or “above” but also “over” or “above” without an intermediate feature or layer (i.e., directly on).
[0033] Etching process is one of the important processes in semiconductor device manufacturing process, mainly divided into chemical etching using chemical solution wet etching and dry etching. Among them, dry etching is to use corrosive gas or plasma etching, which can realize anisotropic etching, so that the etching pattern is more fine, suitable for fine process requiring high precision.
[0034] Etching with plasma is called plasma etching (Plasma Etching), which is a process of transferring the pattern exposed and developed on the photoresist to the target material to form the desired design pattern. Generally, high-energy particle-containing plasma is generated by a specific gas in the excited plasma etching device chamber. The high-energy particles in the plasma can remove the substances on the surface of the material by physical sputtering or chemical reaction to generate volatile products.
[0035] The plasma etching device 100 provided by the application can also include an inductively coupled plasma (ICP) etching device. The ICP etching device can include a processing chamber 200, and plasma for etching can be generated in the processing chamber 200. For example, an induction coil can be arranged in the processing chamber 200, and the induction coil is used to pass through a radio frequency current. The radio frequency current passing through the coil generates an electromagnetic field in the processing chamber 200, and the electromagnetic field excites the gas in the processing chamber 200 to generate plasma.
[0036] Referring to Figure 1 In some embodiments, the plasma etching device 100 includes an etching platform arranged in the processing chamber 200. A semiconductor device to be etched is placed on the etching platform. During etching of the semiconductor device, the semiconductor device is surrounded by the plasma generated by the plasma etching device 100, and the plasma etches the side of the semiconductor device away from the etching platform. The semiconductor device can include a wafer. In the embodiment in which the semiconductor device includes a wafer, the plasma etching device 100 can be used to form a trench hole on the wafer or perform other etching steps.
[0037] In the above embodiment, the concentration of the plasma generated by the plasma etching device 100 is not the same in the processing chamber 200, resulting in different etching effects of the plasma on the semiconductor device. For example, in the embodiment in which the semiconductor device includes a wafer, the degree of inclination of the trench hole etched on the wafer by the plasma with a relatively small concentration in the region is different from the degree of inclination of the trench hole etched on the wafer by the plasma with a relatively large concentration in the region, which ultimately affects the yield of the finally formed wafer.
[0038] Continuing to refer to Figure 1 In the above embodiment, the plasma etching device 100 further includes a first coil 11, the first coil 11 is located outside the processing chamber 200, the first coil 11 has a first axis, and the first coil 11 can be considered to be wound around the first axis. The processing chamber 200 described above is provided with a first chamber wall 300, and the first axis is perpendicular to the first chamber wall 300. The first coil 11 is used to pass through a current, and then a magnetic field is generated through the first coil 11. The generated magnetic field can adjust the concentration of the plasma in the processing chamber 200. However, it cannot be guaranteed that the resistance of the first coil 11 at each point in the circumferential direction is the same, and it cannot be guaranteed that the magnetic field generated by the first coil 11 after passing through the current is uniform. The concentration of the plasma in the processing chamber 200 is also not the same.
[0039] The plasma etching apparatus 100 provided in the present application further includes a rotating device 20, which is also disposed outside the processing chamber 200 and connected to the first coil 11. The rotating device 20 is configured to drive the first coil 11 to rotate about a first axis. Through the above configuration, the first axis of the first coil 11 is perpendicular to the first chamber wall 300. The rotating device 20 drives the first coil 11 to rotate about the first axis. Therefore, even if the resistance of a certain point or base of the first coil 11 in the circumferential direction is different and the magnetic field generated by the first coil 11 is not uniform, the magnetic field generated by the rotating first coil 11 is uniform within a certain period of rotation of the first coil 11 about the first axis. The uniform magnetic field can adjust the concentration of the plasma within the processing chamber 200, making the concentration of the plasma within the processing chamber 200 uniform, thereby enabling the plasma etching apparatus 100 to uniformly etch all parts of the semiconductor device, thereby improving the yield of the semiconductor device. Illustratively, in an embodiment in which the semiconductor device includes a wafer, the concentration of plasma inside the processing chamber 200 is uniform, which can correct the inclination of the channel holes on the wafer, for example, making the inclination of the channel holes at various locations on the wafer the same, or reducing the inclination of the channel holes on the wafer so that the extension direction of the channel holes is perpendicular to the extension direction of the wafer.
[0040] In some embodiments, the plasma etching device 100 also includes a moving device 40, and the first coil 11 is connected to the rotating device 20 through the moving device 40. The moving device 40 is used to drive the first coil 11 to move along the first axis, thereby driving the first coil 11 close to or away from the processing chamber 200. The distance from the first coil 11 to the processing chamber 200 can be controlled, thereby controlling the strength of the magnetic field generated by the first coil 11 inside the processing chamber 200, thereby controlling the first coil 11 to increase or decrease the amplitude of the plasma concentration inside the processing chamber 200.
[0041] In the above embodiment, the rotating device 20 includes a stator 21 and a rotor 22. The relative position of the stator 21 and the first chamber wall 300 is fixed. The moving device 40 includes a slide rail 30 and a first slider 31. The longitudinal direction of the slide rail 30 is collinear with the first axis. The rotor 22 is connected to one end of the slide rail 30. The first slider 31 is disposed on the slide rail 30 and is connected to the first coil 11. The rotor 22 can rotate relative to the stator 21, thereby driving the slide rail 30 to rotate about its own longitudinal direction. When the relative position of the first slider 31 on the slide rail 30 remains unchanged, the first coil 11 connected to the first slider 31 rotates about the first axis, and the distance between the plane of the first coil 11 and the first chamber wall 300 remains unchanged. When the first slider 31 slides on the slide rail 30, the first coil 11 connected to the first slider 31 rotates about the first axis, and the plane of the first coil 11 can move closer to or farther from the first chamber wall 300.
[0042] In some embodiments, the mobile device 40 further comprises a first connecting rod 41 connecting the first slider 31 and the first coil 11. The first connecting rod 41 is used to fix the relative position of the first slider 31 and the first coil 11, so that the first slider 31 sliding on the slide rail 30 can drive the first coil 11 to approach or move away from the first chamber wall 300. In the above embodiment, the first connecting rod 41 can comprise an insulating material to avoid affecting the current flow path of the first coil 11.
[0043] In the above embodiment, the first connecting rod 41 can be provided with a plurality of first connecting rods 41, and the adjacent two first connecting rods 41 have a first included angle (such as Figure 3 In the above embodiment, the first connecting rod 41 can be provided with a plurality of first connecting rods 41, and the adjacent two first connecting rods 41 have a first included angle (such as
[0044] Referring to Figure 2 In some embodiments, the plasma etching device 100 further comprises a second coil 12, the second coil 12 has a second axis, the second coil 12 can be considered to be wound around the second axis, and the second axis is collinear with the first axis; in the embodiment in which the processing chamber 200 is provided with the first chamber wall 300, the second axis is also perpendicular to the first chamber wall 300. In the above embodiment, the second coil 12 is also used to flow current, and the second coil 12 can also generate a magnetic field, and the generated magnetic field can adjust the concentration of the plasma in the processing chamber 200. In the above embodiment, the second coil 12 is also connected with the rotating device 20, and the rotating device 20 is used to drive the second coil 12 to rotate around the second axis, so that the rotating second coil 12 generates a uniform magnetic field, and the uniform magnetic field can adjust the concentration of the plasma in the processing chamber 200, so that the concentration of the plasma in the processing chamber 200 is uniform, and the plasma etching device 100 can uniformly etch the semiconductor device, thereby improving the yield of the semiconductor device. In the above embodiment, the diameter of the first coil 11 is greater than the diameter of the second coil 12.
[0045] In the embodiments in which the plasma etching device 100 comprises the first coil 11 and the second coil 12, the second coil 12 can be located on the side of the first coil 11 away from the first chamber wall 300 (i.e., the second coil 12, the first coil 11, and the processing chamber 200 are arranged in sequence along the first axis / second axis); or, the first coil 11 can be located on the side of the second coil 12 away from the first chamber wall 300 (i.e., the first coil 11, the second coil 12, and the processing chamber 200 are arranged in sequence along the first axis / second axis); or, the distance from the first coil 11 to the first chamber wall 300 is the same as the distance from the second coil 12 to the first chamber wall 300 in the direction perpendicular to the first chamber wall 300, and in the embodiments in which the diameter of the first coil 11 is greater than the diameter of the second coil 12, the second coil 12 is located within the space enclosed by the first coil 11.
[0046] In the embodiments in which the plasma etching device 100 further comprises the moving device 40, the second coil 12 is also connected to the rotating device 20 through the moving device 40. The moving device 40 can drive the second coil 12 to move closer to or farther away from the processing chamber 200. The distance from the second coil 12 to the processing chamber 200 can be controlled, and thus the strength of the magnetic field generated by the second coil 12 inside the processing chamber 200 can be controlled, so as to control the amplitude of the increase or decrease of the plasma concentration inside the processing chamber 200. The moving device 40 can further comprise the slide rail 30 and the second slide block 32. The second slide block 32 is also arranged on the slide rail 30, and the second slide block 32 is connected to the second coil 12. The rotor 22 can rotate relative to the stator 21, and thus drive the slide rail 30 to rotate along the length direction of the slide rail 30. When the relative position of the second slide block 32 on the slide rail 30 is unchanged, the second coil 12 connected to the second slide block 32 rotates along the second axis, and the distance from the plane on which the second coil 12 is located to the first chamber wall 300 is unchanged. When the second slide block 32 slides on the slide rail 30, the second coil 12 connected to the second slide block 32 rotates along the second axis, and at the same time, the plane on which the second coil 12 is located can move closer to or farther away from the first chamber wall 300.
[0047] In some embodiments, the moving device 40 further comprises the second connecting rod 42, and the second connecting rod 42 connects the second slide block 32 and the second coil 12. The second connecting rod 42 is used to fix the relative position of the second slide block 32 and the second coil 12, so that the second slide block 32 sliding on the slide rail 30 can drive the second coil 12 to move closer to or farther away from the first chamber wall 300. The second connecting rod 42 can comprise an insulating material, so as to avoid affecting the current flow path on the second coil 12.
[0048] In the above embodiments, a plurality of second connecting rods 42 can be provided, and the second connecting rods 42 can be arranged at the second angle (e.g., 90°) with each other. Figure 3The plurality of second connecting rods 42 can increase the connection points between the second coil 12 and the second slider 32, thereby improving the connection stability between the second coil 12 and the second slider 32. For example, the moving device 40 includes three second connecting rods 42, and the second included angle is 120°. In this way, the connection stability between the second coil 12 and the second slider 32 can be improved, and the number of second connecting rods 42 can be reduced, thereby reducing the weight of the plasma etching device 100.
[0049] In combination with the embodiment in which the moving device 40 includes the first slider 31 and the second slider 32, the first slider 31 and the second slider 32 can be separately arranged, so that the first coil 11 and the second coil 12 can be relatively independently close to or away from the first chamber wall 300. Referring to Figure 4 , the first slider 31 and the second slider 32 can also be an integrated structure. In this case, the relative position of the first coil 11 and the second coil 12 is fixed, and with the movement of the integrated first slider 31 and the second slider 32 on the slide rail 30, the first coil 11 and the second coil 12 jointly close to or away from the first chamber wall 300 along the first axis / second axis.
[0050] The above merely provides a specific implementation of the present application, but the protection scope of the present application is not limited thereto. Any person skilled in the art can easily think of changes or replacements within the technical scope disclosed by the present application, which shall be covered within the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims
1. A plasma etching device, characterized in that: include: a processing chamber, the processing chamber being provided with a first chamber wall, and the processing chamber being capable of generating plasma for etching; a first coil, the first coil being located outside the processing chamber, the first coil having a first axis, the first axis being perpendicular to the first chamber wall; A rotating device is connected to the first coil, and is used to drive the first coil to rotate around the first axis.
2. The plasma etching device according to claim 1, characterized in that: The plasma etching device further includes a moving device connected to the first coil, and the moving device is used to drive the first coil to move along the first axis.
3. The plasma etching device according to claim 2, characterized in that: The rotating device includes a stator and a rotor; the moving device includes a slide rail and a first slider, the first slider is arranged on the slide rail, the length direction of the slide rail is collinear with the first axis, the rotor is connected to one end of the slide rail, the relative position of the stator and the first chamber wall is fixed, and the first slider is connected to the first coil.
4. The plasma etching device according to claim 3, characterized in that: The moving device further includes a first connecting rod connecting the first slider and the first coil.
5. The plasma etching device according to claim 4, characterized in that: There are a plurality of first connecting rods, and a first angle is formed between two adjacent first connecting rods.
6. The plasma etching device according to claim 3, characterized in that: The plasma etching device further includes a second coil, the second coil having a second axis, and the second axis is collinear with the first axis; The moving device further includes a second slider, which is disposed on the slide rail and connected to the second coil.
7. The plasma etching device according to claim 6, characterized in that: The moving device further includes a second connecting rod connecting the second slider and the second coil.
8. The plasma etching device according to claim 7, characterized in that: There are multiple second connecting rods, and a second angle is formed between two adjacent second connecting rods.
9. The plasma etching device according to any one of claims 6 to 8, characterized in that: The first slider and the second slider are an integrated structure.
10. The plasma etching device according to any one of claims 6 to 8, characterized in that: The second coil is located on a side of the first coil away from the first chamber wall; Or, the first coil is located on a side of the second coil away from the first chamber wall; Alternatively, along a direction perpendicular to the first chamber wall, the distance from the first coil to the first chamber wall is the same as the distance from the second coil to the first chamber wall.