Low-temperature source device based on PN-type semiconductor module

Abstract

The utility model provides a low-temperature source device based on a PN-type semiconductor module, which comprises a PN-type semiconductor module, the PN-type semiconductor module comprises a closed box, a plurality of layers of array PN-type semiconductor chips are arranged in the closed box, the peripheral side wall of the closed box is a heat insulation wall, the top end of the closed box is a cold end face, the bottom end of the closed box is a hot end face, the hot end face is connected with a water-cooling circulation base, and the water-cooling circulation base is connected with the PN-type semiconductor module. And the water-cooling circulating base is connected with a water cooler. The low-temperature source device is small in size, low in cost and capable of achieving low-temperature control in the sample machining process of ion beam equipment and effectively avoiding heat damage of samples.

Description

TECHNICAL FIELD

[0001] The utility model relates to ion beam equipment technical field, especially point to a kind of low temperature source device based on PN type semiconductor module. BACKGROUND

[0002] Under vacuum environment, ion beam processes sample section, duration is long, such as lasting several hours even overnight, which can cause local temperature of sample processing area to rise, even excessively high, especially for temperature-sensitive material, which can cause local thermal damage. To avoid thermal damage, ion beam equipment on the market will be configured with liquid nitrogen refrigeration device to provide cold source.

[0003] Liquid nitrogen refrigeration device needs to be installed with dewar flask, generally with a volume of 3 liters, which can provide low temperature for about 4 hours, and then needs to be filled with liquid nitrogen in time, or equipped with automatic liquid nitrogen filling subsystem, which increases cost and site space. Moreover, the temperature of liquid nitrogen is about-196 ℃, which can cause the temperature of sample area to be too low or not the expected temperature, so a heating module needs to be installed near the sample stage, making the temperature control of ion beam equipment more complex. SUMMARY

[0004] The utility model provides a kind of low temperature source device based on PN type semiconductor module, small in size, and low in cost, can realize low temperature control in the process of ion beam equipment processing sample, effectively avoid the thermal damage of sample.

[0005] The technical scheme of the utility model is realized as follows: a kind of low temperature source device based on PN type semiconductor module, including PN type semiconductor module, PN type semiconductor module includes sealed box, multiple layers of array PN type semiconductor sheet are equipped in sealed box, the lateral wall of sealed box is heat insulation wall, the top end of sealed box is cold end face, the bottom end is hot end face, hot end face is connected with water-cooling circulation base, water-cooling circulation base is connected with water chiller.

[0006] Further, PN type semiconductor module is connected with power filter module, cold end face is provided with temperature sensor, temperature sensor and power filter module are connected with PID control module.

[0007] Further, water-cooling circulation base includes box body, inlet and outlet are provided on box body, and turbulence baffle is provided in the box body between inlet and outlet.

[0008] Further, turbulence baffle includes first baffle and second baffle alternately arranged, the head of first baffle is spaced apart from box body, the tail is connected with box body, the head of second baffle is connected with box body, and the tail is spaced apart from box body.

[0009] Further, sealed box and water-cooling circulation base are filled with heat-conducting silica gel.

[0010] The utility model discloses a beneficial effect:

[0011] The utility model discloses based on peltier effect, adopt array PN type semiconductor to build cold source, can control the target temperature of cold source through the input current control of PN type semiconductor module, and control method is simple and direct, and the volume is small, can be directly placed to the vacuum cabin of ion beam equipment and use, and cold source distance sample table is close, and low temperature conduction is fast, and temperature control efficiency is high.

[0012] The temperature control of the cold source constructed by the PN type semiconductor module adopts PID control, and the method is mature and high in efficiency, and the target temperature control can be realized quickly. DRAWINGS

[0013] In order to more clearly illustrate the technical scheme in the embodiments of the utility model or prior art, the following will briefly introduce the drawings needed to be used in the embodiment or prior art description, and obviously, the drawings in the following description are only some embodiments of the utility model, and for those skilled in the art, other drawings can also be obtained according to these drawings without paying creative labor.

[0014] Figure 1 It is the structural diagram of low temperature source device;

[0015] Figure 2 It is the internal structure diagram of water-cooling circulation base;

[0016] Figure 3 It is the overhead view of heat-conducting wire and PN type semiconductor module;

[0017] Figure 4 It is the structural diagram of heat-conducting module;

[0018] Figure 5 It is the overhead view of Figure 3 .

[0019] PN type semiconductor module 1, power filter module 2, PID control module 3, control system 4, temperature sensor 5, heat-conducting wire 6, heat-conducting module 7, sample table 8, water-cooling circulation base 9, sealed box 10, heat-conducting brush 11, spring 12, heat-conducting block 13, box 14, water inlet 15, water outlet 16, first baffle 17, second baffle 18. DETAILED DESCRIPTION

[0020] The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without creative effort fall within the scope of the present application.

[0021] As shown in the drawings, Figure 1 A low-temperature source device based on a PN-type semiconductor module 1, including a PN-type semiconductor module 1, the PN-type semiconductor module 1 is connected with a power filter module 2, the power filter module 2 is connected with a PID control module 3, the PID control module 3 is connected with a control system 4, the control system 4 can adopt a PLC controller, such as model S7-1200 and the like. The control system 4 controls the target temperature, start and stop state of the PID control module 3, and sets the target temperature through the control system 4, which will be the target temperature of the PID control module 3.

[0022] The cold end face of the PN-type semiconductor module 1 is provided with a temperature sensor 5, the temperature sensor 5 is connected with the PID control module 3, the PID control module 3 monitors the temperature of the cold end face of the array PN-type semiconductor module 1 in real time through the temperature sensor 5, and the built-in microcontroller of the PID control module 3 calculates the current control signal required to be output according to the set target temperature and the current temperature difference through the PID control algorithm, so as to adjust the temperature. The microcontroller is used for controlling the current size and direction of the multi-layer array PN-type semiconductor module 1, so as to ensure that the top plate temperature of the array PN-type semiconductor module 1 is maintained at the target temperature, and a cold source is formed.

[0023] The hot end face of the PN-type semiconductor module 1 is connected with a water-cooled circulating base 9, the water-cooled circulating base 9 is connected with a water chiller, the water chiller is connected with the control system 4, and the control system 4 controls the output water flow temperature, flow, start and stop state of the water chiller. After the water chiller is started, cold water flows from the water chiller into the water-cooled circulating base 9, absorbs the heat generated by the PN-type semiconductor module 1, and leaves the water-cooled circulating base 9 after the temperature rises, and finally returns to the water tank of the water chiller. The cooled cold water flows into the water-cooled circulating base 9 again, and carries away the heat generated by the PN-type semiconductor module 1. This process will continue to ensure that the temperature of the hot end face of the PN-type semiconductor module 1 is stable, so as to ensure that the temperature of the processed part is maintained within the preset or safe temperature range.

[0024] As shown in the drawings, Figure 2As shown, the water-cooling circulation base 9 comprises a box 14, the box 14 is provided with a water inlet 15 and a water outlet 16, a turbulence baffle is arranged in the box 14 between the water inlet 15 and the water outlet 16, the turbulence baffle comprises first baffles 17 and second baffles 18 arranged alternately, the head of the first baffle 17 is spaced apart from the box 14, the tail is connected with the box 14, the head of the second baffle 18 is connected with the box 14, and the tail is spaced apart from the box 14, thereby prolonging the circulation path of the cold water and improving the heat exchange efficiency.

[0025] As shown in the figure, Figure 1 The PN-type semiconductor module 1 comprises a sealed box 10, a plurality of layers of arrayed PN-type semiconductor chips are arranged in the sealed box 10, the number of the arrayed PN-type semiconductor chips, the number of layers and the temperature of the water-cooling circulation base 9 determine the minimum value of the temperature control, and the number of layers can be adjusted according to the target temperature of the cold source.

[0026] The peripheral side wall of the sealed box 10 is a heat insulation wall, and a non-heat-conducting material is used. The top end and the bottom end of the sealed box 10 are heat-conducting end faces, such as copper plates with high thermal conductivity and the like. The bottom end of the sealed box 10 and the water-cooling circulation base 9 below it are connected by a material with low thermal conductivity. The sealed box 10 is filled with heat-conducting silica gel, so that the copper plate and the arrayed PN-type semiconductor chips are tightly attached to meet the good heat conduction requirement.

[0027] The top end of the sealed box 10 is a cold end face, the cold end face is provided with a heat wire 6 fixing hole, and the cold end face is provided with a plurality of rows of heat wires 6, such as two rows of heat wires 6. The temperature-sensitive sensor 5 is located at the center position of the cold end face and between the two rows of heat wires 6. One end of each row of heat wires 6 is connected to the PN-type semiconductor module 1 by a screw (the screw is connected to the heat wire 6 fixing hole), and the other end is connected to the heat conduction module 7. The bottom end of the sealed box 10 is a hot end face, and the hot end face is filled with heat-conducting silica gel and tightly attached to the water-cooling circulation base 9.

[0028] As shown in the figure, Figures 3-5 The cold end face of the PN-type semiconductor module 1 is connected to the heat conduction module 7 through the heat wire 6, the heat conduction module 7 is connected to the sample stage 8, and the heat wire 6 adopts thick copper stranded wire, so that the arrayed PN-type semiconductor module 1 and the heat conduction module 7 form a soft connection, which is convenient for later maintenance.

[0029] The heat conduction module 7 comprises two heat-conducting brushes 11 oppositely arranged, the two heat-conducting brushes 11 are connected through a spring 12, the heat-conducting brushes 11 are tightly attached to the sample table 8 and form a tight state. The tail part between the two heat-conducting brushes 11 is provided with a heat-conducting block 13, the heat-conducting wire 6 is connected with the heat-conducting block 13 through a screw, the head part between the two heat-conducting brushes 11 is provided with a sample table 8 clamping groove, the heat-conducting brushes 11 conduct the heat of the sample table 8 to the heat-conducting block 13, the sample table 8 is kept at a low temperature or a target temperature, and the low-temperature control of a sample processing area is realized.

[0030] The use method of the low-temperature source device comprises the following steps:

[0031] (1) one end of the heat-conducting wire 6 is connected with the cold end face through a screw, and the other end is connected with the heat-conducting block 13 of the heat conduction module 7 through a screw;

[0032] (2) the water chiller is started, the cold water enters the water cooling circulating base 9 through the water chiller, and the temperature of the hot end face of the PN type semiconductor module 1 is reduced, then the cold water is returned to the water chiller for cooling and then enters the water cooling circulating base 9 again;

[0033] (3) the PID control module 3 is started, the target output current of the power filtering module 2 is controlled through the PID control module 3, the power filtering module 2 outputs the current to the PN type semiconductor module 1, the temperature of the cold end face of the PN type semiconductor module 1 is controlled, and the cold source is formed;

[0034] (4) the sample table 8 is connected with the sample table 8 clamping groove of the heat conduction module 7, the cold source absorbs the heat at the sample table 8 through the heat-conducting wire 6 and the heat conduction module 7, and the sample area keeps the required temperature.

[0035] The above merely describes the preferred embodiments of the present application and is not used to limit the present application, and any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A low-temperature source device based on a PN-type semiconductor module, characterized in that: It includes a PN-type semiconductor module, which includes a sealed box. A multi-layer array of PN-type semiconductor chips is arranged in the sealed box. The surrounding side walls of the sealed box are heat-insulating walls. The top of the sealed box is a cold end face, and the bottom end is a hot end face. The hot end face is connected to a water-cooled circulation base, and the water-cooled circulation base is connected to a water chiller.

2. A low-temperature source device based on a PN-type semiconductor module according to claim 1, characterized in that: The PN type semiconductor module is connected to the power filter module, a temperature sensor is provided on the cold end surface, and both the temperature sensor and the power filter module are connected to the PID control module.

3. A low-temperature source device based on a PN-type semiconductor module according to claim 1 or 2, characterized in that: The water-cooling circulation base comprises a box body, which is provided with a water inlet and a water outlet, and a spoiler baffle is provided in the box body between the water inlet and the water outlet.

4. A low-temperature source device based on a PN-type semiconductor module according to claim 3, characterized in that: The spoiler baffle comprises a first baffle and a second baffle which are alternately arranged. The head of the first baffle is spaced apart from the box body and the tail is connected to the box body. The head of the second baffle is connected to the box body and the tail is spaced apart from the box body.

5. The low-temperature source device based on a PN-type semiconductor module according to claim 1, characterized in that: The sealed box and the space between the sealed box and the water cooling circulation base are filled with thermal conductive silicone.

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