Vacuum heating device and semiconductor heating device
By using a thermally conductive cover and gas purging diffusion technology in the vacuum heating device, the problem of uneven heating was solved, resulting in a more uniform heating effect and a more efficient degassing process, which reduced substrate warping.
Patent Information
- Application Number
- CN202422579122.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-24
- Publication Date
- 2025-10-17
- Estimated Expiration
- 2034-10-24
AI Technical Summary
Existing vacuum heating devices have heating unevenness issues when heating semiconductor substrates, especially on large-sized substrates, where warping is severe, affecting degassing effects and process quality.
Heating is carried out in a vacuum heating device using a heat-conducting cover. The cover surrounds the containment chamber and heats the substrate. Gas is introduced through the air inlet and diffuser for purging and diffusion. Multiple heating units are combined to uniformly heat the substrate.
It improves heating uniformity, inhibits heat loss, enhances heating efficiency and uniformity of the substrate, effectively removes surface gases, and reduces warping.
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Figure CN223450848U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to but not limited to the process equipment for semiconductor device, because it involves vacuum heating device and semiconductor heating equipment. BACKGROUND
[0002] The vacuum heating device for semiconductor of prior art is described in patent document 1, for example.
[0003] PRIOR ART DOCUMENT
[0004] PATENT DOCUMENT
[0005] Patent document 1: Chinese invention patent publication CN107871681A. SUMMARY
[0006] In patent document 1, in order to uniformly heat the to-be-degassing base material in the film box, the heating assembly includes a first light reflecting cylinder and a second light reflecting cylinder, the first light reflecting cylinder is located between the first cavity and the first light source, and the second light reflecting cylinder is located between the second cavity and the second light source. The first light reflecting cylinder and the second light reflecting cylinder are used to reflect the light irradiated thereon to the to-be-degassing base material in the film box. By such arrangement, the heating energy emitted by the first light source and the second light source can be well maintained in the cylinder, thereby improving the heat utilization rate of the first light source and the second light source, enhancing the heating efficiency, and ensuring that the heating temperature in the first light reflecting cylinder and the second light reflecting cylinder is uniform, so that the to-be-degassing base material in the film box can be uniformly heated.
[0007] In the degassing chamber of patent document 1, since the first light source and the second light source themselves have the problem of heat diffusion and loss when emitting heat, which leads to that the heating of the base material is not uniform enough. In this case, although the light reflecting cylinder can improve the uniformity of heating to a certain extent, there is still room for improvement.
[0008] In view of this, the utility model provides a vacuum heating device which can improve the uniformity of heating of the heating object. In addition, the utility model also provides a semiconductor heating equipment with the vacuum heating device.
[0009] According to the vacuum heating device of the first aspect of the utility model, the heating object is heated, which comprises a shell, a cavity is arranged in the shell, a cover with heat conductivity is arranged in the cavity, an opening part is formed on one side of the cover, a containing chamber is formed in the cover, the containing chamber is used for containing the heating object entering the containing chamber through the opening part, and a first heating unit is arranged outside the cover in the cavity, and the cover is heated around the cover.
[0010] The vacuum heating device according to the first aspect of the present application has the following beneficial effects: the uniformity of heating of the heated object can be improved.
[0011] In some embodiments, the cover includes: a side wall portion in a ring shape; an end portion provided on the side wall portion opposite to the opening portion; and the side wall portion and the end portion jointly forming the accommodation chamber.
[0012] In some embodiments, the cover has an air inlet portion on one side of the side wall portion, the air inlet portion being configured to allow air to enter the accommodation chamber along the side wall portion, and the air inlet portion being configured to diffuse the air entering through the air inlet portion.
[0013] In some embodiments, the air inlet portion includes: a first side plate constituting one side of the side wall portion, a through groove being formed in a middle position of the first side plate; and a first cover plate provided on an outer side of the first side plate, the first cover plate extending from an end of the first side plate adjacent to the end portion and covering the through groove in a manner that a gap is formed between the first cover plate and the first side plate in a thickness direction of the first cover plate.
[0014] In some embodiments, the cover has a diffusion portion provided between the air inlet portion and the accommodation chamber.
[0015] In some embodiments, the diffusion portion includes a first diffusion plate provided on one side of the first side plate opposite to the accommodation chamber with a gap, and the first diffusion plate is configured to diffuse the air entering through the air inlet portion and allow the diffused air to enter the accommodation chamber.
[0016] In some embodiments, the first heating unit includes: a plurality of first heaters, one portion of the first heaters being opposite to the side wall portion, and another portion of the first heaters being opposite to the end portion.
[0017] In some embodiments, the vacuum heating device further includes a tray, the tray being configured to enter and exit the accommodation chamber through the opening portion, the tray having a plurality of spaced-apart holding plates configured to hold the heated objects, and the vacuum heating device further includes a second heating unit, the second heating unit being provided on the tray and configured to heat the holding plates.
[0018] In some embodiments, a plurality of groups of first diffusion holes and / or first diffusion grooves are formed in the first diffusion plate with a gap, and the vacuum heating device further includes a tray, the tray being configured to enter and exit the accommodation chamber through the opening portion, the tray being configured to hold a plurality of the heated objects in a stacked manner with a gap, and each group of the first diffusion holes and / or the first diffusion grooves being opposite to each of the heated objects when the tray is accommodated in the accommodation chamber.
[0019] The semiconductor heating device according to the second aspect of the present application includes the vacuum heating device described above; the heating target is a substrate, and the cover is arranged in the cavity with the opening portion facing downward.
[0020] The semiconductor heating device according to the second aspect of the present application has the following beneficial effect: the uniformity of heating of the substrate can be improved. BRIEF DESCRIPTION OF DRAWINGS
[0021] Figure 1 is a sectional view of an embodiment of the vacuum heating device and the semiconductor heating device according to the present application.
[0022] Figure 2 is a sectional view of the cover and the tray of Figure 1
[0023] Figure 3 is a sectional view of the air inlet portion and the diffusion portion in the cover of Figure 2
[0024] Figure 4 is a perspective view of the cover of Figure 1
[0025] Figure 5 is a perspective view of the holding plate 143 and the second heating unit in the tray of Figure 2
[0026] BRIEF DESCRIPTION OF REFERENCE NUMERALS
[0027] 100: vacuum heating device;
[0028] 101: substrate;
[0029] 102: housing;
[0030] 103: cover;
[0031] 104: first heating unit;
[0032] 105: cavity;
[0033] 106: opening portion;
[0034] 107: accommodation chamber;
[0035] 108: heat insulation material;
[0036] 109: door portion;
[0037] 110: vacuum lock;
[0038] 111: pipeline;
[0039] 112: driving device;
[0040] 113: heating area;
[0041] 114: mounting column;
[0042] 115: side wall part;
[0043] 116: end part;
[0044] 117: air inlet part;
[0045] 118: first side plate;
[0046] 119: first cover plate;
[0047] 120: through groove;
[0048] 121: first slit;
[0049] 122: first air inlet hole;
[0050] 123: diffusion part;
[0051] 124: first diffusion plate;
[0052] 125: first diffusion hole;
[0053] 126: second diffusion plate;
[0054] 127: second diffusion hole;
[0055] 128: air outlet part;
[0056] 129: annular gap;
[0057] 130: second side plate;
[0058] 131: second cover plate;
[0059] 132: guide channel;
[0060] 133: air outlet hole;
[0061] 134: first heater;
[0062] 135: reflection unit;
[0063] 136: reflection plate;
[0064] 137: tray;
[0065] 138: screw rod transmission assembly;
[0066] 139: base;
[0067] 140: motor;
[0068] 141: Coupling
[0069] 142: Screw rod
[0070] 143: Retaining plate
[0071] 144: Support pin
[0072] 145: Second heating unit
[0073] 146: Second heating member DETAILED DESCRIPTION
[0074] Embodiments of the present embodiment are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference signs represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the drawings are exemplary and are only used to explain the present embodiment and cannot be understood as a limitation of the present embodiment.
[0075] In the description of the present embodiment, it is understood that the orientation description, such as the orientation or positional relationship indicated by the upper, lower, front, rear, left, right, etc. is based on the orientation or positional relationship shown in the drawings, which is only for the purpose of facilitating the description of the present embodiment and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present embodiment.
[0076] In the description of the present embodiment, the meaning of several is one or more, and the meaning of multiple is more than two, greater than, less than, more than, etc. are understood as not including the number, and above, below, etc. are understood as including the number. If it is described as first, second, it is only used for the purpose of distinguishing technical features, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features or implicitly indicating the order of indicated technical features.
[0077] In the description of the present embodiment, unless otherwise explicitly limited, the words such as setting, installing, connecting, etc. should be broadly understood, and those skilled in the art can reasonably determine the specific meaning of the above words in the present embodiment in combination with the specific content of the technical solution.
[0078] In a packaging process of a semiconductor device, for example, a substrate 101 (see FIG. 1) such as a wafer, etc. can have organic materials on the surface, or adsorb H2O gas, etc. Therefore, before plating, a degassing process is required to remove H2O gas, organic solvents, etc. adsorbed on the surface of the substrate 101, so as to improve the density, adhesion, etc. of the subsequent deposited film. Figure 1 and Figure 2 That is, an example of a heating object. ) can have organic materials on the surface, or adsorb H2O gas, etc. Therefore, before plating, a degassing process is required to remove H2O gas, organic solvents, etc. adsorbed on the surface of the substrate 101, so as to improve the density, adhesion, etc. of the subsequent deposited film.
[0079] In the process of panel-level advanced packaging, wafer reconstruction is needed, the finished wafer is cut into small chips, and the chips are attached to the wafer or square glass carrier by adhesive material, then PI (polyimide) film layer is coated on the top for planarization, and RDL (Redistribution Layer) layer is made to lead out the I / O electrode in the chip. Since the adhesive material and PI film layer contain a large amount of solvent, high-temperature degassing process is needed to volatilize the solvent in the adhesive material and PI film layer.
[0080] In the prior art, the semiconductor device is heated in the vacuum heating device 100 to perform degassing. In addition, the uneven heating of the vacuum heating device 100 can cause insufficient degassing, or can also cause warping of the substrate 101. In particular, in the process of panel-level advanced packaging, the size of the square glass substrate 101 is particularly large, for example, 510mm×515mm or more, or 600mm×600mm or more, in which case the warping of the four edges of the substrate 101 can be greater. Therefore, in order to suppress the influence of temperature on the warping of the substrate 101, it is necessary to further improve the uniformity of the heating of the vacuum heating device 100.
[0081] Figure 1 is a sectional view of the vacuum heating device 100 and the semiconductor heating equipment 200 according to an embodiment. Figure 2 is a sectional view of the cover 103 and the tray 137 of Figure 1 Figure 3 is a sectional view of the gas inlet part 117 and the diffusion part 123 in the cover 103. Figure 4 is a perspective view of the cover 103. Figure 5 is a perspective view of the holding plate and the second heating unit 145 in the tray 103. In addition, in Figures 1 to 5 , some components are omitted or exaggerated for the sake of illustration, for example, in Figures 1 to 3 , the gas inlet part 117 and the diffusion part 123 of the cover 103 are exaggerated.
[0082] Hereinafter, with reference to Figures 1 to 5 , the vacuum heating device 100 is used as an example of heating and degassing of the semiconductor substrate 101 as a heating object. However, the vacuum heating device 100 is not limited to the heating and degassing of the semiconductor substrate 101, for example, it can also be a preheating process before thin film deposition of the substrate 101. In addition, the heating object is not limited to the semiconductor substrate 101, for example, it can also be a component of a circuit board or the like.
[0083] Mainly with reference to Figure 1 and Figure 2 The vacuum heating apparatus 100 according to the embodiment includes a housing 102, a cover 103 having thermal conductivity, and a first heating unit 104. The housing 102 is provided with a cavity 105. The cover 103 is disposed in the cavity 105. The cover 103 is formed with an opening portion 106 on one side thereof. The cover 103 is formed with a receiving chamber 107 for receiving a substrate 101 as a heating target which enters the receiving chamber 107 through the opening portion 106. The first heating unit 104 is disposed outside the cover 103 in the cavity 105 and heats the cover 103.
[0084] The vacuum heating apparatus 100 according to the embodiment can improve the uniformity of heating of the heating target. Specifically, the cover 103 having thermal conductivity is provided and heated to make the cover 103 a heat radiation source. Since the cover 103 is formed with the receiving chamber 107 which is narrower and isolated from other regions in the cavity 105, the heat loss in the receiving chamber 107 can be suppressed when the substrate 101 is heated in the receiving chamber 107, and the uniformity of heating in the receiving chamber 107 as a whole can be improved. Further, since the cover 103 as a heating source heats the substrate 101 received in the receiving chamber 107 as a whole in a planar manner, the uniformity of heating of the substrate 101 can be further improved compared with the conventional heating by light irradiation of a halogen lamp or the like or direct heating by a hot wire.
[0085] The housing 102 of the vacuum heating apparatus 100 is in the form of a box as a whole. The cross-sectional shape of the housing 102 in the form of a box is not particularly limited and can be, for example, a square, a circle, an ellipse, a hexagon, or the like. In order to suppress the outward diffusion of heat in the cavity 105, the housing 102 as a whole is wrapped with a heat insulating material 108 around the periphery thereof. The housing 102 is formed with a door portion 109 on one side thereof for communicating the cavity 105 with the outside of the vacuum heating apparatus 100. The door portion 109 can be closed or opened by a vacuum lock 110. In a state where the door portion 109 is opened, a substrate 101 to be heated can be fed into the cavity 105 or the heated substrate 101 can be taken out of the cavity 105 by a substrate taking robot (not shown) disposed outside the vacuum heating apparatus 100 through the door portion 109. A pipe 111 for vacuum pumping can be provided at the bottom of the housing 102 and connected to a vacuum pump (not shown). Further, a driving device 112 (to be described later) for driving the substrate 101 to be raised and lowered is also provided at the bottom of the housing 102.
[0086] The upper portion of the cavity 105 forms a heating region 113, and the heating region 113 and the cross section of the cavity 105 are substantially coaxial in the middle portion of the cavity 105 in a plan view. The cover 103 is fixed in the heating region 113 of the cavity 105, and specifically, a plurality of mounting posts 114 are installed in the inner side of the cavity 105 by, for example, screwing, and the cover 103 is installed to the mounting posts 114 by, for example, screwing, and thereby is fixed in the heating region 113 of the cavity 105.
[0087] The cover 103 is not particularly limited as long as it is formed using a material having high thermal conductivity in a vacuum, and for example, the cover 103 can be formed of various metal materials such as stainless steel materials, aluminum alloys, and the like. As the stainless steel material, for example, No. 304 stainless steel, No. 309 stainless steel, No. 309S stainless steel, No. 309L stainless steel, No. 310 stainless steel, No. 310S stainless steel, No. 310L stainless steel, or No. 316L stainless steel, and the like can be listed. As the aluminum alloy material, for example, 7075 aluminum alloy, 2024 aluminum alloy, 4047 aluminum alloy, 5052 aluminum alloy, 6061 aluminum alloy, or 6063 aluminum alloy, and the like can be listed.
[0088] The shape of the cover 103 in a plan view is set in accordance with the shape of the housing 102 in a plan view. In one specific example, the housing 102 is square in a plan view, and the cover 103 is also square as a whole in a plan view. The cover 103 includes a side wall portion 115 and an end portion 116, and the side wall portion 115 and the end portion 116 collectively form the accommodation chamber 107. The side wall portion 115 is annular in a plan view. The cover 103 can be formed by bending a stainless steel sheet to form the end portion 116 and the side wall portion 115, and then shaping by welding the end portion 116 and the side wall portion 115. Then, the cover 103 as a whole is installed in the cavity 105. Alternatively, the cover 103 can be independently installed in the cavity 105 by a plurality of plate-shaped members or sheet metal members, and then the plate-shaped members or the sheet metal members are spliced to each other after being installed in the cavity 105.
[0089] Mainly referring to Figure 2 and Figure 3 and also referring to Figure 1 and Figure 4The cover 103 has an air inlet portion 117 on one side of the side wall portion 115, which allows gas to flow into the housing chamber 107 along the side wall portion 115. The air inlet portion 117 includes a first side plate 118 that constitutes one side of the side wall portion 115, and a first cover plate 119 that is provided on the outer side of the first side plate 118. A through groove 120 is formed at approximately the middle of the first side plate 118 in the vertical direction. The first cover plate 119 extends from the end (e.g., the upper end) of the first side plate 118 adjacent to the end portion 116, in a manner that has a gap between the first cover plate 119 and the first side plate 118 in the thickness direction of the first side plate 118 and toward the through groove 120, and covers the through groove 120. The first cover plate 119 can extend linearly or in a curved shape. The edge of the first cover plate 119 is fixed to the outer side of the first side plate 118 by, for example, welding, thereby forming a first slit 121 between the first cover plate 119 and the first side plate 118. The upper portion of the first cover plate 119 is formed with a first air inlet hole 122 that is in a flared shape, and that is used to communicate with a gas source (e.g., nitrogen). The upper end of the first slit 121 formed between the first cover plate 119 and the first side plate 118 communicates with the first air inlet hole 122. The lower end of the first slit 121 communicates with the through groove 120. Thus, gas that is used to purge the heated substrate 101 from the first air inlet hole 122 enters the housing chamber 107 via the first slit 121 and the through groove 120, thereby purging the surface of the heated substrate 101. Thus, H2O gas, organic solvent, and the like that have separated from the surface of the substrate 101 due to heating are removed.
[0090] With continued reference to Figure 2 and Figure 3 and with additional reference to Figure 1 and Figure 4The cover 103 has a diffusion portion 123 provided between the intake portion 117 and the accommodation chamber 107 for diffusing the gas introduced via the intake portion 117. For example, the diffusion portion 123 is formed on the side of the first side plate 118 of the side wall portion 115 of the cover 103 opposite the accommodation chamber 107. The diffusion portion 123 includes a first diffusion plate 124 formed on the inner side of the first side plate 118, i.e., on the side of the accommodation chamber 107, substantially across the entire inner side surface of the first side plate 118. Between the first diffusion plate 124 and the first side plate 118, there is a gap in the thickness direction of the first side plate 118, and the width of the gap is not particularly limited as long as the gas can be quickly diffused, and can be, for example, 2 mm to 5 mm. The first diffusion plate 124 allows the gas introduced via the intake portion 117 to be diffused and then introduced into the accommodation chamber 107. More specifically, the first diffusion plate 124 is opposed to the through groove 120 formed in the first side plate 118, and allows the purge gas introduced via the through groove 120 to be diffused and then introduced into the accommodation chamber 107. The first diffusion plate 124 has first diffusion holes 125 formed therein, and the first diffusion holes 125 are formed in the first diffusion plate 124 in, for example, a rectangular array. If taken as a unit of one lateral group, the first diffusion plate 124 can be considered to have a plurality of groups of first diffusion holes 125 formed in the up-down direction, and the distance between the groups of first diffusion holes 125 in the up-down direction is not particularly limited as long as the groups of first diffusion holes 125 are opposed to the substrates 101 held on the tray 137 (described later). In other words, as long as the purge gas introduced into the accommodation chamber 107 via the first diffusion holes 125 and the deaerated surfaces of the substrates 101 placed on the respective layers of the tray 137 are substantially flush, the efficiency of the purge and the uniformity of the heating of the substrates 101 can be improved.
[0091] Furthermore, it is not limited to forming the diffusion holes only in the first diffusion plate 124, and for example, instead of or in addition to the diffusion holes, the first diffusion plate 124 can have a plurality of first diffusion grooves (not shown) formed therein in the up-down direction, and each of the first diffusion grooves can be opposed in the up-down direction.
[0092] Further, the diffusion section 123 can further include a second diffusion plate 126 interposed between the first side plate 118 and the first diffusion plate 124, and the second diffusion plate 126 and the first side plate 118 and the first diffusion plate 124 can have gaps therebetween, which can be 2 mm to 5 mm. The second diffusion plate 126 is opposed to the through groove 120 formed in the first side plate 118, in other words, the first diffusion plate 124 is opposed to the through groove 120 with the second diffusion plate 126 interposed therebetween. The second diffusion plate 126 has second diffusion holes 127 formed therein, and the second diffusion holes 127 are formed in the second diffusion plate 126 in, for example, a rectangular array. If taken as a unit of one group in the lateral direction, it can be said that the second diffusion plate 126 has a plurality of groups of the second diffusion holes 127 formed thereon in the vertical direction. However, it should be noted that each group of the second diffusion holes 127 and each group of the first diffusion holes 125 are misaligned in the vertical direction. For example, one group of the second diffusion holes 127 is positioned midway between two groups of the second diffusion holes 127 in the vertical direction. This allows the purge gas source to be more uniformly diffused in the diffusion section 123 before entering the accommodation chamber 107.
[0093] Further, it is not limited to forming the diffusion holes only in the second diffusion plate 126. For example, instead of or in addition to the diffusion holes, the second diffusion plate 126 can have a plurality of second diffusion grooves (not shown) formed therein in the vertical direction, and each of the second diffusion grooves and each of the first diffusion holes 125 and / or the first diffusion grooves are misaligned in the vertical direction.
[0094] Continuing to refer to Figure 2 and with reference to Figure 1 The cover 103 has an air outlet 128, and the position at which the air outlet 128 is formed is not particularly limited as long as it can form a convection with the air inlet 117. For example, an opening 106 formed in the lower portion of the cover 103 can be directly used as the air outlet 128. More specifically, a gap (annular gap 129) between the base 139 (to be described later) of the tray 137 and the opening 106 in a state in which the tray 137 is accommodated in the accommodation chamber 107 can be used as the air outlet 128.
[0095] Further, in other embodiments, the gas outlet 128 can include a second side plate 130 constituting the other side of the side wall portion 115 and a second cover plate 131 provided outside the second side plate 130. The second side plate 130 faces the first side plate 118 with the accommodation chamber 107 interposed therebetween. The second cover plate 131 extends downward from an end (e.g., the upper end) of the second side plate 130 adjacent to the end portion 116 to the lower end of the second side plate 130 in a manner having a gap between the second cover plate 131 and the second side plate 130 in the thickness direction of the second side plate 130. The other edges of the second cover plate 131 than the lower edge are fixed to the outside of the second side plate 130 by, for example, welding, thereby forming a lower-opened guide passage 132 between the second cover plate 131 and the second side plate 130. The second side plate 130 is formed with gas outlet holes 133 that communicate with the guide passage 132. Thus, the blow gas that has entered through the gas inlet 117 can be discharged via the gas outlet holes 133 and the guide passage 132 of the gas outlet 128. The gas outlet holes 133 are formed in the second side plate 130 in, for example, a rectangular array. If taken in units of a lateral group, the second side plate 130 can be regarded as being formed with a plurality of groups of the gas outlet holes 133 in the vertical direction. The distance between the groups of the gas outlet holes 133 in the vertical direction is not particularly limited as long as the groups of the gas outlet holes 133 and the substrates 101 held on the tray 137 face each other so that the gas of the accommodation chamber 107 can smoothly enter the guide passage 132 via the groups of the gas outlet holes 133.
[0096] Further, it is not limited to the gas outlet holes 133. For example, instead of or in addition to the gas outlet holes 133, the second side plate 130 can be formed with a plurality of gas outlet grooves in the vertical direction. The distance between the gas outlet grooves in the vertical direction and the distance between the layers of the tray 137 are substantially the same, respectively. In addition, the gas outlet 128 can include an exhaust valve (not shown) that faces the lower end of the guide passage 132.
[0097] Continuing with reference to Figure 1As described above, the first heating unit 104 is provided outside the cover 103 in the cavity 105 to heat the cover 103 around the cover 103. Specifically, the first heating unit 104 heats the cover 103 from the outside of the side wall portion 115 and the outside of the end portion 116 of the cover 103. The first heating unit 104 includes a first heater 134, one portion of which is opposed to the side wall portion 115 and the other portion of which is opposed to the end portion 116. The first heater 134 can be a light source (e.g., a halogen lamp) for heating, a heating plate (e.g., integrated with a hot wire or the like), or various commercially available heaters. The first heater 134 is provided between the cover 103 and the wall surface of the cavity 105, and the mounting method of the first heater 134 is not particularly limited. For example, the first heater 134 can be mounted in the cavity 105 by the mounting column 114 as with the cover 103. The first heater 134 has, for example, five, four of which are opposed to the four side plates (including the first side plate 118 and the second side plate 130) of the side wall portion 115 of the cover 103, and the other one is opposed to the end portion 116 of the cover 103. Thus, the first heater 134 can heat each surface of the cover 103 at the same time.
[0098] Further, in the case where the cover 103 has another shape, for example, a cylindrical shape, the first heater 134 can include two, one of which is in the form of a circular ring to surround the side wall portion 115 of the cover 103, and the other of which is in the form of a circular disc to be opposed to the cover 103 above the end portion 116 of the cover 103. In any case, the form of the first heater 134 is not particularly limited as long as the side wall portion 115 and the end portion 116 of the cover 103 can be heated.
[0099] Continuing with reference to Figure 1The vacuum heating apparatus 100 of the embodiment can further include a reflection unit 135 including a reflection plate 136, a portion of which is opposite to the side wall portion 115 with the first heater 134 interposed therebetween, and another portion of which is opposite to the end portion 116 with the first heater 134 interposed therebetween. The reflection plate 136 can use a stainless steel material, and as the stainless steel material, for example, the above-described No. 304 stainless steel, No. 309 stainless steel, No. 309S stainless steel, No. 309L stainless steel, No. 310 stainless steel, No. 310S stainless steel, No. 310L stainless steel, or No. 316L stainless steel, or the like can be cited. The reflection plate 136 is disposed between the first heater 134 and the wall surface of the cavity 105, and the installation method of the reflection plate 136 is not particularly limited, and for example, the reflection plate 136 can be installed in the cavity 105 by the mounting column 114 as in the first heater 134. The reflection plate 136 has, for example, five, of which four are opposite to the four side plates (including the first side plate 118 and the second side plate 130) of the side wall portion 115 of the cover 103 with the first heater 134 interposed therebetween, and the other is opposite to the end portion 116 of the cover 103 with the first heater 134 interposed therebetween.
[0100] Further, in the case where the cover 103 has another shape, for example, a cylindrical shape, the reflection plate 136 can include two, one of which is in a circular ring shape surrounding the wall surface of the cavity 105, and the other of which is in a circular disc shape disposed at the top of the cavity 105. In summary, the form of the reflection plate 136 is not particularly limited as long as the reflection plate 136 can reflect the heat energy radiated from the first heater 134 and / or the cover 103.
[0101] Continuing with reference to Figure 1The vacuum heating apparatus 100 according to the embodiment includes a tray 137 for holding a substrate 101 (a heating target) and a driving device 112 for driving the tray 137 to go in and out of the accommodation chamber 107 via the opening portion 106. The driving device 112 includes a screw drive assembly 138 and a base 139 for holding the tray 137. The screw drive assembly 138 includes a motor 140 installed outside the bottom of the housing 102, a coupling 141 using a vacuum coupling (e.g., a magnetic fluid), and a screw shaft 142 having one end coupled to the motor 140 via the coupling 141 outside the bottom of the housing 102 and the other end protruding into the cavity 105 and supported by the wall surface of the cavity 105. In addition, the driving device 112 includes a linear guide assembly (not shown) used in cooperation with the screw drive assembly 138, which is also disposed in the cavity 105. The base 139 is disposed in the cavity 105. The base 139 is connected to the nut of the screw drive assembly 138 and to the slider of the linear guide assembly by a known method, so that the base 139 is driven by the screw drive assembly 138 to go up and down in the cavity 105.
[0102] Continuing to refer to Figure 2 and also referring to Figure 1 The base 139 of the driving device 112 has a flat plate shape, and the shape of the base 139 is set in accordance with the shape of the opening portion 106 of the cover 103. For example, in the case where the opening portion 106 of the cover 103 has a rectangular shape, the shape of the base 139 in the plan view also has a rectangular shape. The length and width of the base 139 can be slightly smaller than those of the opening portion 106 of the cover 103. When driven by the screw drive assembly 138, the base 139 can be lifted in the upward direction and enter the accommodation chamber 107 of the cover 103 via the opening portion 106 of the cover 103. In the state where the base 139 is accommodated in the accommodation chamber 107, there is an annular gap 129 having a whole annular shape between the edge of the base 139 and the cover 103, and the width of the annular gap 129 can be 1 mm to 3 mm. After the purge gas is introduced into the accommodation chamber 107 via the gas inlet portion 117, the purge gas is blown away via the annular gap 129.
[0103] Further, the length and width of the base 139 can be larger than the size of the opening 106, and the base 139 can be lifted upward by the screw rod driving assembly 138 to a position close to the lower side of the opening 106, and cooperates with the lower edge of the side wall 115 of the cover 103 to form an annular gap 129 with an overall annular shape, and the height of the annular gap 129 in the up-down direction is 1mm to 3mm. After the purge gas is introduced into the accommodation chamber 107 through the gas inlet 117, the purge gas is blown away through the annular gap 129.
[0104] The tray 137 for holding the substrates 101 is held on the base 139 and is in and out of the accommodation chamber 107 through the opening 106. The tray 137 holds a plurality of substrates 101 in a stacked manner and at intervals. In the state that the tray 137 is accommodated in the accommodation chamber 107, each substrate 101 held in the tray 137 is opposite to each group of first diffusion holes 125 and / or first diffusion grooves. For example, the tray 137 has a holding plate 143 for holding the substrates 101 (heating objects), and the holding plate 143 has a plurality of layers distributed at intervals in the up-down direction. The interval of each layer of the holding plate 143 in the up-down direction is substantially the same, and the distance of each layer of the holding plate 143 in the up-down direction is the same as the distance between each group of first diffusion holes 125 and / or first diffusion grooves of the first diffusion plate 124 of the diffusion part 123 in the up-down direction. A plurality of support pins 144 for supporting the substrates 101 are respectively installed on each holding plate 143. There is a gap between the substrates 101 and the holding plate 143. Similarly, in the state that the substrates 101 are held on the holding plate 143 by the support pins 144, the distance of each layer of the substrates 101 in the up-down direction is also the same as the distance between each group of first diffusion holes 125 of the first diffusion plate 124 of the diffusion part 123 in the up-down direction.
[0105] Mainly referring to Figure 2 and Figure 5 In addition, the vacuum heating device 100 of the embodiment can further include a second heating unit 145 arranged on the tray 137 and respectively heating the holding plate 143. For example, the second heating unit 145 can include a plurality of second heating members 146 such as heating wires, and each second heating member 146 is arranged on the holding plate 143 and heats the whole holding plate 143. The installation manner of the second heating member 146 is not particularly limited as long as it can heat the holding plate 143, for example, it can be directly arranged on the bottom of the holding plate 143, or it can be embedded in the inside of the holding plate 143.
[0106] The working process of the vacuum heating device 100 of the embodiment is described below.
[0107] When the door portion 109 of the housing 102 is opened, the substrate 101 is conveyed to the tray 137 by an external feeding robot (not shown) while the tray 137 is driven upward by the driving device 112 until the support pins 144 of the holding plates 143 of each layer of the tray 137 are each supported by the substrate 101. Then, the door portion 109 is closed.
[0108] After the holding plates 143 of the tray 137 are each filled with the substrate 101, the driving device 112 drives the tray 137 into the accommodation chamber 107 through the opening portion 106 of the cover 103. In the state where the tray 137 is accommodated in the accommodation chamber 107 (see FIG. 2), the base 139 of the driving device 112 and the opening portion 106 of the cover 103 form an annular gap 129, and the substrate 101 held in each holding plate 143 is opposed to the first diffusion hole 125 and / or the first diffusion groove of the first diffusion plate 124 of the diffusion portion 123 in the up-and-down direction, respectively. Figure 1 Figure 2
[0109] The cavity 105 is evacuated, and a purge gas (e.g., nitrogen) is introduced. The first heating unit 104 heats (heat radiation) the cover 103 from the outside, and the second heating unit 145 heats (heat radiation) each holding plate 143 of the tray 137. In addition, the purge gas is heated when it enters the accommodation chamber 107 through the gas inlet portion 117 and the diffusion portion 123.
[0110] The purge gas is evacuated through a vacuum valve or an exhaust valve, and thus the heating and degassing of the substrate 101 are completed.
[0111] In the vacuum heating device 100 of the embodiment, the cover 103 having heat conductivity is provided, and the cover 103 is heated to serve as a heat radiation source. Since the cover 103 forms the accommodation chamber 107 that is narrower and isolated from other regions in the cavity 105, the heat in the accommodation chamber 107 can be inhibited from escaping to the wall surface of the cavity 105 when the substrate 101 is heated in the accommodation chamber 107, and the uniformity of heating in the accommodation chamber 107 is improved as a whole.
[0112] Further, since the cover 103 serving as a heat radiation source heats the substrate 101 accommodated in the accommodation chamber 107 as a whole in a planar manner, the uniformity of heating of the substrate 101 can be further improved compared to the conventional method of heating by light irradiation by a halogen lamp or the like or heating by a hot wire.
[0113] In the vacuum heating device 100 of the embodiment, by forming the gas inlet portion 117 on the cover 103, the gas for purging the surface of the substrate 101 can be introduced into the housing chamber 107, and H2O gas, organic solvent, and the like that are separated from the surface of the substrate 101 due to heating can be effectively removed.
[0114] Further, by causing the gas inlet portion 117 to cause the gas to enter the housing chamber 107 along the side wall portion 115, in the process, the purge gas itself is heated by the side wall portion 115 of the cover 103, and thus, after the purge gas enters the housing chamber 107, the purge gas, as the atmosphere gas in the housing chamber 107, can heat the entire housing chamber 107 while uniformly filling the housing chamber 107. In other words, the cover 103 itself and the purge gas (atmosphere gas) that is heated by the cover 103 and enters the housing chamber 107 collectively heat the substrate 101, and the efficiency and uniformity of heating the substrate 101 can be further improved.
[0115] Further, by causing the purge gas to fill the housing chamber 107, a gas thermal energy conduction is formed in the housing chamber 107, and the conduction efficiency of heat radiation is improved.
[0116] In the vacuum heating device 100 of the embodiment, by causing the purge gas to reach the through groove 120 formed at approximately the middle position in the up-down direction of the first side plate 118 from the upper end portion 116 of the first side plate 118 via the first slit 121, the transport path of the purge gas can be extended, and further, the heating time and heating path of the purge gas can be extended, and thus, the temperature and uniformity of the purge gas can be improved, and thus, the efficiency and uniformity of heating the substrate 101 by the purge gas can be further improved.
[0117] In the vacuum heating device 100 of the embodiment, by causing the cover 103 to have the diffusion portion 123 after the gas inlet portion 117, the uniformity of diffusion of the purge gas can be improved, and further, the purging uniformity of the gas in the housing chamber 107 can be improved, and further, the uniformity of heating the substrate 101 can be improved. By causing each substrate 101 held in the tray 137 to respectively oppose each set of first diffusion holes 125 and / or first diffusion grooves in a state in which the tray 137 is housed in the housing chamber 107, the surface of each layer of the substrate 101 held in the tray 137 can be independently purged, and the efficiency of purging can be improved. Further, since these purge gases simultaneously purge the surface of each substrate 101, the uniformity of heating the substrate 101 can be further improved.
[0118] Further, by making the diffusion part 123 have the second diffusion plate 126, and the second diffusion holes 127 and / or the second diffusion grooves of the second diffusion plate 126 are staggered with the first diffusion holes 125 and / or the first diffusion grooves of the first diffusion plate 124, the speed of the purge gas can be hindered to some extent, the heating time and heating path of the gas in the diffusion part 123 are prolonged, the temperature and uniformity of the purge gas are improved, thereby further improving the efficiency and uniformity of the substrate 101 heated by the purge gas.
[0119] In the vacuum heating device 100 of the embodiment, by making the gas outlet part 128 and the gas inlet part 117 form a convection, the purging efficiency of the purge gas can be improved. Further, by making the gas outlet holes 133 and / or the gas outlet grooves formed in the second side plate 130 opposite to each of the substrates 101 held on the tray 137, the purge gas corresponding to each layer of the substrates 101 can independently form a convection, thereby further improving the purging efficiency of the purge gas.
[0120] In the vacuum heating device 100 of the embodiment, by making the annular gap 129 formed between the base 139 of the driving device 112 and the opening part 106 of the cover 103 in the state that the tray 137 is accommodated in the accommodation chamber 107, the annular gap 129 opposite to the vacuum pumping pipeline 111 at the bottom of the housing 102, thereby the suction efficiency of the purge gas can be improved. In addition, in the case that the gas outlet part 128 is formed with the lower open guide channel 132, by making the gas suction valve opposite to the lower end of the guide channel 132, the suction efficiency of the purge gas can be further improved.
[0121] In the vacuum heating device 100 of the embodiment, by making the first heating unit 104 heat the cover 103 from the outside of the side wall part 115 and the outside of the end part 116 of the cover 103, the uniformity of the first heating unit 104 heating the whole cover 103 can be improved, and further the uniformity of the cover 103 heating the substrates 101 can be improved.
[0122] In addition, in the vacuum heating device 100 of the embodiment, by having the second heating unit 145, the second heating unit 145 heats the holding plate 143 holding the substrates 101, the uniformity of the heating of the substrates 101 can be improved.
[0123] In fact, since the entire substrate 101 is supported on the holding plate 143 at a short distance therefrom, the substrate 101 can be heated very uniformly by heating the entire holding plate 143 and then heating the substrate 101 via the holding plate 143 in the form of a panel. Moreover, the holding plate 143 located below and supporting a piece of substrate 101 and the holding plate 143 located above the substrate 101 simultaneously heat the upper and lower surfaces of the substrate 101, so that the substrate 101 can be heated very uniformly and efficiently.
[0124] In addition, since the second heating unit 145 is housed together with the tray 137 in the housing chamber 107, heat radiation from the second heating unit 145 is mainly confined within the housing chamber 107 and hardly spreads outside the cover 103, so that the second heating unit 145 can heat the substrate 101 uniformly and efficiently.
[0125] Further, in fact, the heated substrate 101 itself also radiates heat, and the periphery of the substrate 101 can be heated efficiently via the heated cover 103, so that the temperature of the periphery of the substrate 101 can be suppressed from decreasing.
[0126] In other words, the heated cover 103 and the second heating unit 145 housed in the housing chamber 107 of the cover 103 can heat the substrate 101 more uniformly and efficiently, suppress the heat of the housing chamber 107 from spreading outside, and suppress the temperature of the periphery of the substrate 101 from decreasing.
[0127] The vacuum heating device 100 of the embodiment can be applied in a semiconductor heating apparatus 200. As the semiconductor heating apparatus 200, a heating degassing apparatus can be cited, in which the cover 103 is disposed in the cavity 105 with the opening portion 106 facing downward. However, this is not limiting. For example, in the case where the vacuum heating device 100 does not have the tray 137 with multiple layers and the heating target is sent into the cavity 105 of the housing 102 at one time, the opening portion 106 of the cover 103 can be directly opposed to the door portion 109 of the housing 102.
[0128] In the above embodiment, an example in which the cover 103 has the gas inlet portion 117 is described, but the present application is not limited thereto. In a case where only heating is required and purging is not required, the gas inlet portion 117 can not be provided. Further, an example in which the purge gas enters the accommodation chamber 107 via the gas inlet portion 117 provided in the side wall portion 115 of the cover 103 is described, but the present application is not limited thereto. The cover 103 can have only the through groove 120 formed in the first side plate 118, and the gas can be directly connected to the through groove 120 by the pipe 111.
[0129] While the embodiments of the present embodiment have been shown and described, it is understood that the embodiments can be changed, modified, replaced and varied in various ways by those having ordinary skill in the art without departing from the principles and spirit of the present embodiment, and the scope of the present embodiment is defined by the claims and their equivalents.
Claims
1. A vacuum heating device for heating an object, characterized in that: include: a housing, wherein a cavity is provided in the housing; A heat-conductive cover is disposed in the cavity, an opening is formed on one side of the cover, and a storage chamber is formed in the cover, the storage chamber is used to accommodate the heating object entering the storage chamber through the opening; The first heating unit is arranged on the outer side of the cover in the cavity and surrounds the cover to heat the cover.
2. The vacuum heating device according to claim 1, characterized in that The cover comprises: The side wall portion is ring-shaped; an end portion, disposed on a side of the side wall portion opposite to the opening portion; The side wall portion and the end portion together form the accommodation chamber.
3. The vacuum heating device according to claim 2, characterized in that: The cover has an air inlet portion at one side of the side wall portion, and the air inlet portion allows gas to enter the accommodation chamber along the side wall portion.
4. The vacuum heating device according to claim 3, characterized in that: The air intake portion comprises: a first side plate constituting one side of the side wall portion, wherein a through groove is formed in the middle of the first side plate; The first cover plate is arranged on the outer side of the first side plate, starts from one end of the first side plate adjacent to the end portion, extends toward the through groove and covers the through groove in a manner of having a gap between the first cover plate and the first side plate along the thickness direction of the first cover plate.
5. The vacuum heating device according to claim 4, characterized in that: The cover has a diffusion portion, which is arranged between the air inlet portion and the accommodation chamber and is used to diffuse the gas entering through the air inlet portion.
6. The vacuum heating device according to claim 5, characterized in that: The diffusion portion includes a first diffusion plate, which is arranged on one side of the first side plate located at the receiving chamber with a gap therebetween; The first diffusion plate diffuses the gas entering through the air inlet portion and then allows the gas to enter the receiving chamber.
7. The vacuum heating device according to any one of claims 2 to 6, characterized in that: The first heating unit includes a plurality of first heaters, wherein a portion of the first heaters faces the side wall portion and another portion faces the end portion.
8. The vacuum heating device according to any one of claims 1 to 6, characterized in that: Also included is a tray, the tray being introduced into and out of the storage chamber through the opening, the tray having a plurality of spaced-apart retaining plates for retaining the object to be heated; The vacuum heating device further includes a second heating unit, which is disposed on the tray and heats the holding plate.
9. The vacuum heating device according to claim 6, characterized in that: A plurality of groups of first diffusion holes and / or first diffusion slots are formed at intervals on the first diffusion plate; The vacuum heating device further includes a tray, the tray being introduced into and out of the storage chamber through the opening, the tray holding a plurality of the heating objects at intervals in a stacked manner; When the tray is accommodated in the accommodation chamber, each group of the first diffusion holes and / or first diffusion grooves faces each of the heating objects.
10. A semiconductor heating device, characterized in that: The vacuum heating device comprises the vacuum heating device according to any one of claims 1 to 9; the heating object is a substrate, and the cover is arranged in the cavity with the opening facing downward.
Citation Information
Patent Citations
Degassing cavity and semiconductor processing device
CN107871681A