Crystal silicon wafer coating device

Abstract

The utility model discloses a crystal silicon wafer coating device, which comprises a coating platform, a coating device, a coating device and a control device, and is characterized in that the coating platform is used for placing a crystal silicon wafer; a material receiving platform is arranged at the tail end of the coating platform; an adsorption hole array is arranged on the material receiving platform; the adsorption hole array is provided with a plurality of adsorption holes; the adsorption hole array is arranged at the joint of the material receiving platform and the crystal silicon wafer; and redundant coating liquid at the tail end of the crystal silicon wafer is discharged through the adsorption hole array. The adsorption hole array is arranged at the joint of the material receiving platform and the crystal silicon wafer, so that redundant coating liquid on the crystal silicon wafer is discharged through the adsorption hole array, and the phenomenon that the redundant coating liquid permeates into the back surface of the crystal silicon wafer is avoided.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of crystalline silicon wafer coating technology, particularly to a crystalline silicon wafer coating device. BACKGROUND

[0002] When the crystalline silicon wafer is coated, the crystalline silicon wafer is usually placed on a coating platform, and then the surface of the crystalline silicon wafer is coated with a coating liquid. However, when the coating is performed from the starting end to the end of the surface of the crystalline silicon wafer, the excess liquid will often seep into the back of the crystalline silicon wafer from the end of the top surface of the crystalline silicon wafer.

[0003] How to avoid the phenomenon of the coating liquid seeping into the back of the crystalline silicon wafer has become a technical problem to be solved in the industry. SUMMARY

[0004] In order to at least solve the above technical problems, the purpose of the utility model is to provide a crystalline silicon wafer coating device, which is provided with an adsorption hole array at the joint between the receiving platform and the crystalline silicon wafer, so that the excess coating liquid on the crystalline silicon wafer is discharged through the adsorption hole array, and the phenomenon of the excess coating liquid seeping into the back of the crystalline silicon wafer is avoided.

[0005] In order to achieve the above purpose, the crystalline silicon wafer coating device provided by the present application comprises:

[0006] A coating platform for placing a crystalline silicon wafer;

[0007] A receiving platform is provided at the end of the coating platform;

[0008] An adsorption hole array is provided on the receiving platform;

[0009] The adsorption hole array is provided with a plurality of adsorption holes;

[0010] The adsorption hole array is arranged at the joint between the receiving platform and the crystalline silicon wafer;

[0011] The excess coating liquid on the end of the crystalline silicon wafer is discharged through the adsorption hole array.

[0012] Further, it further comprises:

[0013] An air extraction device is connected in communication with the adsorption hole array;

[0014] The air extraction device extracts the coating liquid in the adsorption hole array.

[0015] Further, the receiving platform is provided with an air extraction channel, and the air extraction device is connected in communication with the adsorption hole array through the air extraction channel.

[0016] Further, it further comprises:

[0017] A telescopic device is connected to the receiving platform.

[0018] The telescopic device is used to adjust the gap between the coating platform and the adsorption hole array.

[0019] Further, the telescopic device further comprises:

[0020] The slider comprises a slider body and a baffle;

[0021] The baffle is connected with the telescopic rod of the telescopic device;

[0022] The telescopic device is provided with a guide rail, and the slider body is arranged on the guide rail;

[0023] When the telescopic rod moves, the slider body is driven to move in the same direction on the guide rail;

[0024] The slider is connected with the material receiving platform.

[0025] Further, it further comprises:

[0026] The first limiting platform is arranged at the starting end of the coating platform;

[0027] The first limiting platform and the material receiving platform jointly limit the displacement of the silicon wafer between the starting end and the end on the coating platform.

[0028] Further, the first limiting platform is provided with a limiting column, and the first limiting platform limits the displacement of the silicon wafer on the coating platform through the limiting column;

[0029] The number of limiting columns is not less than two.

[0030] Further, the first limiting platform is further provided with a horizontal direction telescopic device, which is used to adjust the gap between the limiting column and the silicon wafer in the horizontal direction.

[0031] Further, a gravity direction telescopic device is further arranged between the first limiting platform and the horizontal direction telescopic device;

[0032] The gravity direction telescopic device is used to adjust the height difference between the limiting column and the silicon wafer in the gravity direction.

[0033] Further, the two sides perpendicular to the direction from the starting end to the end are further provided with a second limiting platform and a third limiting platform;

[0034] The second limiting platform and the third limiting platform are symmetrically arranged on the two sides of the coating platform;

[0035] The second limiting platform and the third limiting platform are both provided with a limiting column;

[0036] When the second limiting platform and the third limiting platform move towards the center of the coating platform, the limiting posts on the second limiting platform and the limiting posts on the third limiting platform jointly limit the displacement of the silicon wafer.

[0037] The silicon wafer coating device provided by the embodiment of the application comprises a coating platform, a receiving platform, a suction hole array, a plurality of suction holes, a limiting post, a second limiting platform, a third limiting platform, a gravity direction telescopic device, a horizontal direction telescopic device and a silicon wafer. BRIEF DESCRIPTION OF DRAWINGS

[0038] The accompanying drawings are included to provide a further understanding of the application, and constitute a part of the specification, and are used to explain the application together with the embodiments of the application, and do not constitute a limitation on the application. In the drawings:

[0039] Figure 1 is a structural schematic diagram of the silicon wafer coating device according to the embodiment of the application;

[0040] Figure 2 is a structural schematic diagram of the silicon wafer coating device according to the embodiment of the application from another perspective;

[0041] Figure 3 is a structural schematic diagram of the telescopic device according to the embodiment of the application.

[0042] Legend of the drawings:

[0043] 101-coating platform; 102-first limiting platform; 103-receiving platform; 104-suction hole array; 105-exhaust passage; 106-mounting plate; 107-sliding block; 108-guide rail; 109-telescopic device; 110-limiting post; 111-second limiting platform; 112-gravity direction telescopic device; 113-horizontal direction telescopic device; 114-third limiting platform; 115-silicon wafer; 201-telescopic rod; 202-baffle; 203-sliding block body. DETAILED DESCRIPTION

[0044] Embodiments of the present application will be described in more detail with reference to the drawings. While certain embodiments of the application will be shown and described in the drawings and specification, it is to be understood that the application can be variously embodied and is not to be limited to the embodiments set forth herein, which are presented as exemplary. It should be further understood that the drawings and the embodiments are not to scale and are merely intended to illustrate certain embodiments of the application.

[0045] It should be understood that the various steps of the method embodiments of the present application can be performed in different orders and / or in parallel. In addition, the method embodiments can include additional steps and / or omit performing the steps shown. The scope of the present application is not limited in this respect.

[0046] The term "comprising" and variations thereof as used herein are used inclusively, i.e., "comprising but not limited to." The term "based on" is "based at least in part on." The term "one embodiment" means "at least one embodiment"; the term "another embodiment" means "at least one additional embodiment"; the term "some embodiments" means "at least some embodiments." Related terms are defined in the description that follows.

[0047] It should be noted that the use of "a", "an", "the" and similar referents in the application are intended to be illustrative and not restrictive. Although the above discussion will reference a number of embodiments so as to use structural and / or terminological consistency throughout the application, unless the context clearly indicates otherwise, it should be understood that emphasis is placed on "one or more" rather than "one", and "a plurality" should be understood to mean "two or more".

[0048] Embodiments of the present application will be described in more detail with reference to the drawings. While certain embodiments of the application will be shown and described in the drawings and specification, it is to be understood that the application can be variously embodied and is not to be limited to the embodiments set forth herein, which are presented as exemplary. It should be further understood that the drawings and the embodiments are not to scale and are merely intended to illustrate certain embodiments of the application.

[0049] The embodiments of the present application provide a crystalline silicon wafer coating device, comprising:

[0050] The coating platform is used to place the crystalline silicon wafer;

[0051] A receiving platform is provided at the end of the coating platform;

[0052] The receiving platform is provided with an array of adsorption holes;

[0053] The array of adsorption holes is provided with a plurality of adsorption holes;

[0054] The array of adsorption holes is arranged at the junction of the receiving platform and the crystalline silicon wafer;

[0055] The excess coating liquid on the end of the crystalline silicon wafer is discharged through the array of adsorption holes.

[0056] Embodiment 1

[0057] Figure 1 is a structural schematic diagram of the crystalline silicon wafer coating device of the embodiments of the present application, Figure 2is a schematic view of a crystalline silicon wafer coating device structure according to another aspect of the present application, Figure 3 is a schematic view of a telescopic device structure according to an aspect of the present application, which will be described below in detail Figures 1-3 A crystalline silicon wafer coating device according to an aspect of the present application is described in detail.

[0058] In an exemplary embodiment, the crystalline silicon wafer coating device according to an aspect of the present application is used for coating a crystalline silicon wafer 115.

[0059] In an exemplary embodiment, the crystalline silicon wafer coating device according to an aspect of the present application comprises a coating platform 101, which is used for placing a crystalline silicon wafer 115 to be coated.

[0060] In an exemplary embodiment, a receiving platform 103 is arranged at the end of the coating platform 101, i.e. the receiving platform 103 is arranged in the direction of the end of the coating operation.

[0061] In an exemplary embodiment, the receiving platform 103 is provided with an adsorption hole array 104.

[0062] In an exemplary embodiment, the adsorption hole array 104 is provided with a plurality of adsorption holes.

[0063] In an exemplary embodiment, the adsorption hole array 104 can be an array of one or more rows of adsorption holes according to requirements.

[0064] In an exemplary embodiment, the length of the adsorption hole array 104 is not less than the width of the crystalline silicon wafer 115.

[0065] In an exemplary embodiment, the adsorption hole array 104 is arranged at the joint of the receiving platform 103 and the crystalline silicon wafer 115, i.e. the adsorption hole array 104 is arranged at the edge of the side of the receiving platform 103 facing the crystalline silicon wafer 115.

[0066] In an exemplary embodiment, according to requirements, the adsorption hole array 104 on the receiving platform 103 can be in contact with the edge of the crystalline silicon wafer 115 without a gap, or the gap can be about 1 millimeter.

[0067] In an exemplary embodiment, the excess coating liquid at the end of the crystalline silicon wafer 115 is drained through the adsorption hole array 104, i.e. the excess coating liquid on the crystalline silicon wafer 115 flows into the adsorption hole array 104 and is then drained through the adsorption hole array 104, thereby avoiding the phenomenon of the excess coating liquid flowing onto the back of the crystalline silicon wafer 115.

[0068] In an exemplary embodiment, the silicon wafer coating device further comprises an air suction device.

[0069] In an exemplary embodiment, the air suction device is connected to the adsorption hole array 104.

[0070] In an exemplary embodiment, the air suction device is used to suck the coating liquid in the adsorption hole array 104, i.e. when the excess coating liquid is sucked, the air suction device is started to suck the coating liquid in the adsorption hole array 104. The air suction device is provided to accelerate the suction of the coating liquid in the adsorption hole array 104, and the coating liquid in the adsorption hole array 104 can be discharged without the air suction device.

[0071] In an exemplary embodiment, the air suction channel 105 is provided on the surface of the receiving platform 103, and the air suction device is connected to the adsorption hole array 104 through the air suction channel 105.

[0072] In an exemplary embodiment, the air suction channel 105 is provided with an outlet on the surface of the receiving platform 103, and when the air suction device is not provided, the height of the outlet of the air suction channel 105 is lower than the height of the adsorption hole array 104, so that the coating liquid in the adsorption hole array 104 is easily discharged.

[0073] In an exemplary embodiment, the silicon wafer coating device further comprises a telescopic device 109.

[0074] In an exemplary embodiment, the telescopic device 109 is connected to the receiving platform 103, for example, the telescopic device 109 is arranged below the receiving platform 103.

[0075] In an exemplary embodiment, the telescopic device 109 is used to adjust the gap between the receiving platform 103 and the adsorption hole array 104. It can be understood that the telescopic device 109 drives the receiving platform 103 to move by telescoping, so as to adjust the gap between the adsorption hole array 104 and the receiving platform 103 on the receiving platform 103, i.e. adjust the gap between the adsorption hole array 104 and the end of the silicon wafer 115 placed on the coating platform 101, so as to directly discharge the excess coating liquid on the end of the silicon wafer 115 through the adsorption hole array 104.

[0076] In an exemplary embodiment, the telescopic device 109 is an electric cylinder, which is a modular product integrated with a servo motor and a screw.

[0077] In an exemplary embodiment, the telescopic device 109 further comprises a sliding block 107.

[0078] In an exemplary embodiment, the sliding block 107 comprises a sliding block body 203 and a baffle 202.

[0079] In an exemplary embodiment, the slider 107 is in the shape of a letter L, i.e. the slider body 203 and the baffle 202 are connected in the shape of a letter L, as shown in Figure 3 .

[0080] In an exemplary embodiment, the baffle 202 is connected with the telescopic rod 201 of the telescopic device 109, and the telescopic movement of the telescopic device 109 is realized by the telescopic rod 201, i.e. the telescopic rod 201 drives the baffle 202 to move synchronously when the telescopic rod 201 moves.

[0081] In an exemplary embodiment, the telescopic device 109 is provided with a guide rail 108, and the slider body 203 is arranged on the guide rail 108, as shown in Figure 3 .

[0082] In an exemplary embodiment, a mounting plate 106 is arranged between the slider 107 and the material receiving platform 103 according to needs, as shown in Figure 1 .

[0083] In an exemplary embodiment, the telescopic rod 201 drives the slider body 203 to move in the same direction on the guide rail 108 when the telescopic rod 201 moves.

[0084] In an exemplary embodiment, the slider 107 is connected with the material receiving platform 103, for example, the slider 107 is arranged below the material receiving platform 103, as shown in Figure 3 .

[0085] In an exemplary embodiment, a base is arranged below the telescopic device 109 according to needs, and the height of the base is adjustable to adapt to the silicon wafers 115 of different thicknesses; i.e. to achieve that the upper surface of the adsorption hole array 104 is not higher than the upper surface of the silicon wafer 115 placed on the coating platform 101.

[0086] In an exemplary embodiment, the silicon wafer coating device provided by the embodiment of the present application further comprises a first limiting platform 102.

[0087] In an exemplary embodiment, the first limiting platform 102 is arranged at the starting end of the coating platform 101, i.e. when the silicon wafer 115 on the coating platform 101 is coated, the coating operation is performed from the direction of the first limiting platform 102 arranged at one end of the coating platform 101 to the direction of the material receiving platform 103 arranged at the other side of the coating platform 101.

[0088] In an exemplary embodiment, the first limiting platform 102 and the material receiving platform 103 are arranged on the two sides of the coating platform 101, for example, the first limiting platform 102 is arranged on the left side of the coating platform 101, and the material receiving platform 103 is arranged on the right side of the coating platform 101.

[0089] In an exemplary embodiment, the first limiting platform 102 and the receiving platform 103 jointly limit the displacement of the silicon wafer 115 on the coating platform 101 between the initial end and the terminal end, i.e. the first limiting platform 102 and the receiving platform 103 limit the left and right movement of the silicon wafer 115 placed on the coating platform 101.

[0090] In an exemplary embodiment, when the first limiting platform 102 is a fixed platform, the silicon wafer 115 is placed on the coating platform 101, and the left side is close to the first limiting platform 102, and the movement of the silicon wafer 115 in the left and right directions on the coating platform 101 is limited by driving the telescopic device 109 on the right side of the coating platform 101.

[0091] In an exemplary embodiment, the first limiting platform 102 is provided with a limiting column 110, and the first limiting platform 102 limits the displacement of the silicon wafer 115 on the coating platform 101 through the limiting column 110, as shown in Figure 1 .

[0092] In an exemplary embodiment, the number of limiting columns 110 is not less than two, and the two limiting columns 110 are arranged on the two sides of the first limiting platform 102.

[0093] In an exemplary embodiment, the limiting column 110 protrudes on the upper surface of the first limiting platform 102.

[0094] In an exemplary embodiment, when the limiting column 110 is multiple, the multiple limiting columns 110 are distributed at equal intervals on the upper surface of the first limiting platform 102.

[0095] In an exemplary embodiment, the first limiting platform 102 is further provided with a horizontal telescopic device 113.

[0096] In an exemplary embodiment, the horizontal telescopic device 113 is used to adjust the gap between the limiting column 110 and the silicon wafer 115 in the horizontal direction.

[0097] In an exemplary embodiment, a gravity direction telescopic device 112 is further arranged between the first limiting platform 102 and the horizontal telescopic device 113.

[0098] In an exemplary embodiment, the gravity direction telescopic device 112 is used to adjust the height difference between the limiting column 110 and the silicon wafer 115 in the gravity direction.

[0099] In an exemplary embodiment, the horizontal telescopic device 113 and the gravity direction telescopic device 112 can both be air cylinders or hydraulic cylinders.

[0100] In an exemplary embodiment, when the first limiting platform 102 is moved, the first limiting platform 102 can be first lifted by controlling the gravity direction telescopic device 112, and when the upper surface of the limiting column 110 is higher than the lower surface of the silicon wafer 115, the first limiting platform 102 can be moved to the center point of the coating platform 101 by controlling the horizontal direction telescopic device 113. Of course, according to the needs, the horizontal direction telescopic device 113 and the gravity direction telescopic device 112 can be started at the same time.

[0101] In an exemplary embodiment, the two sides perpendicular to the direction from the starting end to the end are also provided with the second limiting platform 111 and the third limiting platform 114.

[0102] In an exemplary embodiment, the second limiting platform 111 and the third limiting platform 114 are symmetrically arranged on the two sides of the coating platform 101.

[0103] In an exemplary embodiment, for example, the second limiting platform 111 is located at the back of the coating platform 101, and the third limiting platform 114 is located at the front of the coating platform 101, as shown in Figure 1 and Figure 2 .

[0104] In an exemplary embodiment, the second limiting platform 111 and the third limiting platform 114 are both provided with limiting columns 110.

[0105] In an exemplary embodiment, the functions of the limiting columns 110 on the second limiting platform 111 and the limiting columns 110 on the third platform are the same as the function of the limiting columns 110 on the first limiting platform 102.

[0106] In an exemplary embodiment, according to the needs, the number of limiting columns 110 on the second limiting platform 111, the number of limiting columns 110 on the third platform, and the number of limiting columns 110 on the first limiting platform 102 are the same.

[0107] In an exemplary embodiment, the limiting columns 110 on the second limiting platform 111 and the limiting columns 110 on the third platform are symmetrically distributed with the center point of the coating platform 101 as the center.

[0108] In an exemplary embodiment, when the second limiting platform 111 and the third limiting platform 114 move towards the center of the coating platform 101, the limiting columns 110 on the second limiting platform 111 and the limiting columns 110 on the third limiting platform 114 jointly limit the displacement of the silicon wafer 115.

[0109] In an exemplary embodiment, the second limiting platform 111 and the third limiting platform 114 are both provided with horizontal direction telescopic devices 113 and gravity direction telescopic devices 112.

[0110] In an exemplary embodiment, the functions of the horizontal telescopic device 113 and the gravity telescopic device 112 on the second limiting platform 111 and the third limiting platform 114 are the same as the functions of the horizontal telescopic device 113 and the gravity telescopic device 112 on the first limiting platform 102.

[0111] In an exemplary embodiment, in use, the crystalline silicon wafer 115 coating device of the present application is usually used by first lowering the first limiting platform 102, the second limiting platform 111 and the third limiting platform 114, and the upper surface of the limiting column 110 on the three platforms is usually controlled to be not higher than the upper surface of the coating platform 101; after the crystalline silicon wafer 115 is placed, the crystalline silicon wafer 115 is limited between the limiting columns 110 through the joint action of the horizontal telescopic device 113 and the gravity telescopic device 112, and then the gap between the adsorption hole array 104 and the end of the crystalline silicon wafer 115 is adjusted by starting the receiving platform 103.

[0112] Although the embodiments of the present application are disclosed as above, the content is only the embodiments adopted for the purpose of facilitating the understanding of the present application, and is not used to limit the present application. Any person skilled in the art of the present application can make any modification and change in the implementation form and details without departing from the spirit and scope of the present application, but the patent protection scope of the present application shall be subject to the scope defined by the appended claims.

Claims

1. A crystalline silicon wafer coating apparatus characterized by comprising: The utility model relates to a coating platform for placing a silicon wafer, a receiving platform at the end of the coating platform, an adsorption hole array on the receiving platform, the adsorption hole array comprising a plurality of adsorption holes, the adsorption hole array being arranged at the junction of the receiving platform and the silicon wafer, and the excess coating liquid on the end of the silicon wafer being removed through the adsorption hole array. The utility model further comprises an air extraction device in communication with the adsorption hole array, and the air extraction device removes the coating liquid in the adsorption hole array. The receiving platform is provided with an air extraction channel, and the air extraction device is in communication with the adsorption hole array through the air extraction channel. The utility model further comprises a telescopic device connected to the receiving platform, and the telescopic device is used to adjust the gap between the coating platform and the adsorption hole array. The telescopic device further comprises a sliding block comprising a sliding block body and a baffle, the baffle being connected to the telescopic rod of the telescopic device, the telescopic device being provided with a guide rail, and the sliding block body being arranged on the guide rail. The sliding block is connected to the receiving platform. The utility model further comprises a first limiting platform arranged at the starting end of the coating platform, and the first limiting platform and the receiving platform jointly limit the displacement of the silicon wafer between the starting end and the end of the silicon wafer on the coating platform.

2. The apparatus according to claim 1, wherein The first limiting platform is provided with a limiting column, and the first limiting platform limits the displacement of the silicon wafer on the coating platform through the limiting column. The number of limiting columns is not less than two. The first limiting platform is further provided with a horizontal telescopic device, and the horizontal telescopic device is used to adjust the gap between the limiting column and the silicon wafer in the horizontal direction.

3. The apparatus of claim 2, wherein the coating station is configured to apply a coating to the surface of the wafer. The first limiting platform and the horizontal telescopic device are further provided with a gravity direction telescopic device.

4. The apparatus of claim 1, wherein the apparatus further comprises a coating station. The gravity direction telescopic device is used to adjust the height difference between the limiting column and the silicon wafer in the gravity direction. The two sides perpendicular to the direction from the starting end to the end are further provided with a second limiting platform and a third limiting platform. The second limiting platform and the third limiting platform are symmetrically arranged on the two sides of the coating platform.

5. The apparatus of claim 4, wherein the coating station is a spin coater. The second limiting platform and the third limiting platform are both provided with the limiting column. When the second limiting platform and the third limiting platform move towards the center of the coating platform, the limiting columns on the second limiting platform and the third limiting platform jointly limit the displacement of the silicon wafer. ​ ​ ​ ​ 6. The crystalline silicon slice coating apparatus according to claim 1, wherein ​ ​ ​ 7. The apparatus of claim 6, wherein the apparatus further comprises a plurality of nozzles. ​ ​ 8. The apparatus of claim 7, wherein the coating station is configured to apply a coating to the surface of the wafer. ​ 9. The apparatus of claim 8, wherein the apparatus further comprises a coating station. ​ ​ 10. The apparatus of claim 9, wherein the apparatus further comprises a coating station. ​ ​ ​ ​

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