Raw material supply system for preparing quartz glass

Abstract

The utility model provides a raw material supply system for preparing quartz glass, and belongs to the technical field of quartz glass preparation. The raw material supply system comprises a raw material conveying pipeline, an auxiliary conveying pipeline, a mixing common pipeline and a mixing unit, and the raw material conveying pipeline is used for conveying titanium source raw material gas; the auxiliary conveying pipeline is used for conveying silicon source raw material gas; the mixing common pipeline is connected with the raw material conveying pipeline and the auxiliary conveying pipeline so as to preliminarily mix titanium source raw material gas and silicon source raw material gas, the mixing common pipeline is provided with a mixing heating piece used for heating gas, and the mixing unit is used for receiving gas output by the mixing common pipeline. According to the raw material supply system for preparing the quartz glass, the titanium source raw material gas and the silicon source raw material gas can be preheated for the first time and then are fully heated and mixed, so that the loss of the titanium source raw material gas is conveniently reduced, and the mixing time is shortened.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of quartz glass production, and in particular to a raw material supply system for preparing quartz glass. BACKGROUND

[0002] Ultra Low Expansion quartz glass is mainly composed of silicon dioxide and a certain amount of titanium dioxide, which reduces the thermal expansion coefficient of quartz glass and realizes the ultra low expansion of quartz glass within a certain temperature range.

[0003] In the related art, the preparation of Ultra Low Expansion quartz glass is generally prepared by mixing titanium tetrachloride raw material and silicon tetrachloride raw material. However, since the gasification temperature of silicon tetrachloride raw material is much lower than that of titanium tetrachloride raw material, when the relatively low-temperature silicon tetrachloride gas is directly mixed with the relatively high-temperature titanium tetrachloride gas, the temperature difference between them will cause the titanium tetrachloride gas to be liquefied due to the low temperature, thereby causing the loss of titanium tetrachloride raw material, affecting the mixing ratio of the two, and increasing the mixing time of the raw materials and reducing the mixing efficiency. CONTENT OF THE INVENTION

[0004] The present application provides a raw material supply system for preparing quartz glass to improve the technical problem that the titanium tetrachloride raw material is easily lost when mixed with silicon tetrachloride raw material in the related art.

[0005] The present application provides a raw material supply system for preparing quartz glass, comprising:

[0006] A raw material conveying pipeline for conveying titanium source raw material gas;

[0007] An auxiliary conveying pipeline for conveying silicon source raw material gas;

[0008] A mixing common pipeline connected with the raw material conveying pipeline and the auxiliary conveying pipeline respectively to preliminarily mix the titanium source raw material gas and the silicon source raw material gas, and a mixing heating element for heating gas is arranged on the mixing common pipeline;

[0009] A mixing unit receiving the gas output by the mixing common pipeline and configured to continue heating and mixing the titanium source raw material gas and the silicon source raw material gas.

[0010] In a possible implementation, the auxiliary conveying pipeline comprises at least two auxiliary conveying sub-pipelines connected in parallel, one of the auxiliary conveying sub-pipelines is connected with the mixing common pipeline, and the other auxiliary conveying sub-pipeline is connected with the mixing unit.

[0011] Each of the auxiliary conveying sub-pipelines is provided with an on-off valve for controlling the on-off state of the pipeline.

[0012] In a possible implementation, the method further includes:

[0013] At least two carrier gas pipelines are connected to the auxiliary delivery sub-pipelines in a one-to-one correspondence. The carrier gas pipelines are used to input carrier gas flow into the auxiliary delivery sub-pipelines. Each of the carrier gas pipelines is provided with a control valve component for controlling the on-off state of the pipeline.

[0014] In a possible implementation, a carrier gas heating element is provided on the carrier gas pipeline, and the carrier gas heating element is used to heat the carrier gas flow.

[0015] In a possible implementation manner, the raw material delivery pipeline, the auxiliary delivery pipeline, and the carrier gas pipeline are all provided with gas flow control components.

[0016] In one possible embodiment, the raw material delivery pipeline includes a raw material tank body and a gas-liquid conversion unit connected to the raw material tank body, the raw material tank body is filled with titanium source raw material liquid, and the gas-liquid conversion unit is configured to convert the titanium source raw material liquid into titanium source raw material gas.

[0017] In a possible implementation, the method further includes:

[0018] The raw material tank body is connected to a weight detection component and a pressure detection component, and a liquid level detection component is provided in the raw material tank body.

[0019] In a possible embodiment, a temperature detection component and a pressure detection component are provided in the mixing unit, and the mixing heating temperature in the mixing unit is higher than the mixing heating temperature of the mixing common pipeline.

[0020] In a possible implementation manner, the mixing unit is a mixer, and a heating layer is wrapped around the periphery of the mixer.

[0021] In a possible embodiment, a combustion unit is further included, wherein the combustion unit is used to receive the gas mixed and heated by the mixing unit and deposit and prepare quartz glass.

[0022] The raw material supply system for preparing quartz glass provided in the present application utilizes a common mixing pipeline to preliminarily mix titanium source raw material gas and silicon source raw material gas, and utilizes a mixing unit to continue to heat the mixed titanium source raw material gas and silicon source raw material gas. Since a mixing heating element for heating the gas is provided on the common mixing pipeline, the titanium source raw material gas and the silicon source raw material gas can be preliminarily preheated and mixed before being further heated and mixed by the mixing unit, thereby avoiding liquefaction of the titanium source raw material gas when the relatively low temperature silicon source raw material gas is mixed with the high temperature titanium source raw material gas, thereby affecting the mixing ratio of the raw material gases.

[0023] In addition, the pipeline arrangement for the secondary heating after the preliminary preheating allows the silicon source raw material gas and the titanium source raw material gas to be mixed at a high temperature before entering the mixing unit, which can shorten the mixing time and improve the mixing efficiency. BRIEF DESCRIPTION OF DRAWINGS

[0024] The accompanying drawings, which are incorporated herein and constitute part of this specification, illustrate embodiments consistent with the application and serve to explain the principles

[0025] Figure 1 A structure diagram of a raw material supply system for preparing quartz glass in an embodiment of the application.

[0026] The specific embodiments of the application have been shown and described in the above-described drawings and text. More detailed descriptions will be given in the following. These drawings and text are not intended to limit the scope of the concept of the application in any way, but to illustrate the concept of the application to those skilled in the art by referring to specific embodiments.

[0027] EXPLANATION OF REFERENCE NUMERALS

[0028] 100 - raw material conveying pipeline; 101 - raw material tank; 102 - gas-liquid conversion unit; 103 - weight detection member; 104 - pressure detection member; 105 - liquid level detection member;

[0029] 200 - auxiliary conveying pipeline; 201 - auxiliary conveying sub-pipeline; 202 - on-off valve member;

[0030] 300 - mixed common pipeline; 301 - gas flow control member; 302 - mixed heating member;

[0031] 400 - mixing unit; 401 - temperature detection member;

[0032] 500 - carrier gas pipeline; 501 - control valve member; 502 - carrier gas heating member;

[0033] 600 - combustion unit. DETAILED DESCRIPTION

[0034] In order to make the objects, technical solutions and advantages of the present application clearer, the following will be combined with the accompanying drawings for the preferred embodiments of the present application to make the technical solutions in the embodiments of the present application more fully described. In the drawings, same or similar notations represent same or similar components or components with same or similar functions. The described embodiments are part of the embodiments of the present application, rather than all the embodiments. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present application, and cannot be understood as a limitation of the present application. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work under the premise that the embodiments in the present application fall within the scope of protection of the present application. The embodiments of the present application will be described in detail below with reference to the drawings.

[0035] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "mounting", "connection", "connecting" should be understood in a broad sense, for example, it can be fixedly connected, or indirectly connected through an intermediate medium, or the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0036] In the description of the present application, it should be understood that the terms "upper", "lower", "front", "back", "left", "right" and the like indicate the orientation or positional relationship shown in the drawings, and are only used to facilitate the description of the present application and simplify the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0037] The terms "first", "second", "third", "fourth" and the like in the specification and claims of the present application and the above drawings are used to distinguish similar objects, and do not necessarily indicate a specific order or sequence. It should be understood that the data thus used can be interchanged under appropriate circumstances, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein.

[0038] In addition, the terms "include" and "have" and any variations thereof are intended to cover non-exclusive inclusion, for example, a process, method, system, product or device including a series of steps or units does not have to be limited to those steps or units clearly listed, but can include other steps or units not clearly listed or inherent to the process, method, product or device.

[0039] As described in the background art, in the related art, the way to prepare the ultra-low expansion quartz glass is generally to mix titanium tetrachloride raw material and silicon tetrachloride raw material, but since the gasification temperature of the silicon tetrachloride raw material is much lower than the gasification temperature of the titanium tetrachloride raw material (the gasification temperature of the silicon tetrachloride raw material is about 57.6°C, and the gasification temperature of the titanium tetrachloride raw material is about 136.4°C), when the two are mixed, since the temperature in the mixer needs to reach the gasification temperature of the titanium tetrachloride raw material, the silicon tetrachloride raw material with a relatively low temperature directly enters the mixer, causing a large temperature difference, causing the titanium tetrachloride gas to be liquefied due to the influence of low temperature, causing loss of gas raw material, affecting the actual mixing effect and mixing time.

[0040] Based on the above description of the related art, in one or more embodiments of the present application, a raw material supply system for preparing quartz glass is provided, which is described below in conjunction with the drawings.

[0041] As shown in Figure 1 , in one or more embodiments of the present application, a raw material supply system for preparing quartz glass is provided, which includes a raw material conveying pipeline 100, an auxiliary conveying pipeline 200, a mixed common pipeline 300, and a mixing unit 400.

[0042] The raw material conveying pipeline 100 is used to convey titanium source raw material gas, and the auxiliary conveying pipeline 200 is used to convey silicon source raw material gas; the mixed common pipeline 300 is connected with the raw material conveying pipeline 100 and the auxiliary conveying pipeline 200 respectively to preliminarily mix the titanium source raw material gas and the silicon source raw material gas, and the mixed common pipeline 300 is provided with a mixed heating member 302 for heating the gas; the mixing unit 400 receives the gas output by the mixed common pipeline 300 and is configured to continue heating the mixed titanium source raw material gas and the silicon source raw material gas.

[0043] As can be seen from the above description, the raw material supply system for preparing quartz glass provided by the embodiments of the present application, in which the raw material conveying pipeline 100 and the auxiliary conveying pipeline 200 are jointly connected to the mixed common pipeline 300, the titanium source raw material gas and the silicon source raw material gas are preliminarily preheated and mixed by the mixed common pipeline 300, and the two after preheating are jointly introduced into the mixing unit 400 for secondary heating and mixing, effectively avoiding the titanium source raw material gas from being liquefied due to the influence of the silicon source raw material gas with a relatively low temperature, and effectively ensuring the mixing ratio and mixing effect of the silicon source raw material gas and the titanium source raw material gas.

[0044] In addition, the setting of preheating and mixing of the silicon source raw material gas and the titanium source raw material gas and then heating and mixing can ensure that the silicon source raw material gas and the titanium source raw material gas have been partially mixed when entering the mixing unit 400, reducing the mixing time in the mixer, thereby facilitating the improvement of the mixing efficiency.

[0045] The silicon source raw material gas can use silicon tetrachloride, dimethyldichlorosilane, methyltrichlorosilane, and other chlorine silane compounds, tetramethoxysilane, tetraethoxysilane, methyltrimethoxysilane, and other alkoxysilanes, and the titanium source raw material gas can use titanium tetrachloride, titanium tetrabromide, titanium ethoxide, titanium isopropoxide, titanium n-propoxide, titanium n-butoxide, titanium sec-butoxide, titanium tert-butoxide, and other titanium alkoxides, and the like, and no absolute limitation is made thereto. For example, in the embodiment of the present application, the silicon source raw material gas uses titanium tetrachloride, and the titanium source raw material gas uses titanium tetrachloride.

[0046] As shown in Figure 1 In some embodiments, the auxiliary delivery pipeline 200 includes at least two auxiliary delivery sub-pipelines 201 connected in parallel, one of the auxiliary delivery sub-pipelines 201 is connected with the mixed common pipeline 300, and the other auxiliary delivery sub-pipeline 201 is connected with the mixing unit 400; wherein each auxiliary delivery sub-pipeline 201 is provided with an on-off valve 202 for controlling the on-off state of the pipeline.

[0047] In the above embodiment, the auxiliary delivery sub-pipeline 201 is used for delivering the silicon source raw material gas, and since each auxiliary delivery sub-pipeline 201 is provided with an on-off valve 202, different auxiliary delivery sub-pipelines 201 are switched on or off by controlling different on-off valves 202, thereby forming different delivery states.

[0048] Here, at least two auxiliary delivery sub-pipelines 201 are connected in parallel, which on the one hand can provide a standby pipeline for the silicon source raw material gas when the supply system has a problem, facilitating later maintenance and maintenance, and on the other hand, by controlling the switching on-off state of different auxiliary delivery sub-pipelines 201, different delivery states can also be formed to facilitate subsequent full use of the carrier gas pipeline 500 to deliver the silicon source raw material gas.

[0049] Further, the raw material supply system further includes at least two carrier gas pipelines 500, the carrier gas pipelines 500 are connected one by one with the auxiliary delivery sub-pipelines 201, the carrier gas pipelines 500 are used for inputting a carrier gas flow to the auxiliary delivery sub-pipelines 201, and each carrier gas pipeline 500 is provided with a control valve 501 for controlling the on-off state of the pipeline.

[0050] For example, as shown in Figure 1 The above-mentioned carrier gas pipeline 500 includes an argon gas pipeline and a nitrogen gas pipeline, and the setting of the carrier gas pipeline 500 can promote the uniform distribution of the raw material gas, ensure the efficient mixing of the titanium source raw material gas and the silicon source raw material gas in the mixing unit 400, and since the boiling point of silicon tetrachloride is relatively low, it is easy to form a local high-concentration area in the mixing process, and the delivery effect of the carrier gas flow can avoid the stratification of silicon tetrachloride, thereby improving the mixing uniformity.

[0051] In addition, the carrier gas flow can provide a stable airflow conveying effect for the mixture of titanium source raw material gas and silicon source raw material gas, facilitating precise control of the gas ratio between the two, and providing continuous and uninterrupted gas supply for the process of preparing quartz glass, thereby avoiding product defects caused by material quantity or gas flow factors and improving production efficiency.

[0052] Generally, argon and nitrogen can be used as carrier gas flow or as sweep gas flow. For different implementation scenarios, the delivery control of nitrogen and argon can be flexibly adjusted, and this application does not make absolute limitations on this.

[0053] like Figure 1 As shown, in some embodiments, a carrier gas heating element 502 is provided on the carrier gas pipeline 500, and the carrier gas heating element 502 is used to heat the carrier gas flow.

[0054] The auxiliary transport sub-pipeline 201 used to be connected to the mixing common pipeline 300 will itself be heated by the mixing heating element 302 of the mixing common pipeline 300. Therefore, the carrier gas heating element 502 on the carrier gas pipeline 500 connected to the auxiliary transport sub-pipeline 201 can be omitted; the carrier gas pipeline 500 is actually connected to the auxiliary transport sub-pipeline 201 used to be directly connected to the mixing unit 400. Therefore, the auxiliary transport sub-pipeline 201 directly connected to the mixing unit 400 can be preheated by the carrier gas heating element 502 on the carrier gas pipeline 500. Therefore, the silicon source raw material gas transported by the auxiliary transport sub-pipeline 201 is preheated by the carrier gas heating element 502 and then input into the mixing unit 400.

[0055] Preheating the silicon source raw material gas can reduce the influence of temperature difference on the titanium source raw material gas in the mixing unit 400. When the preheated silicon source raw material gas enters the mixing unit 400, the titanium source raw material gas at a relatively high temperature in the mixing unit 400 will not liquefy due to the low temperature of the silicon source raw material gas, thereby ensuring the mixing efficiency of the titanium source raw material gas and the silicon source raw material gas, which is conducive to reducing the mixing time of the two.

[0056] In some embodiments, a separate auxiliary transport sub-pipeline 201 directly connected to the mixing unit 400 is also provided. The auxiliary transport sub-pipeline 201 is not connected to the carrier gas pipeline 500 and the raw material transport pipeline 100, and is used as a backup pipeline when problems occur with other auxiliary transport sub-pipelines 201.

[0057] In the above embodiment, the raw material delivery pipeline 100, the auxiliary delivery pipeline 200 and the carrier gas pipeline 500 are all provided with a gas flow control element 301. The gas flow control element 301 adopts a gas flow controller in the related art, such as an MFC (Mass Flow Controller). Figure 1The gas flow control members 301 at different positions are respectively identified by different serial numbers, such as MFC1, MFC2, and the like. The temperature detection member 401 is identified by HT, and the pressure detection member 104 is identified by PT.

[0058] The gas flow control member 301 is arranged to accurately control the gas flow rate in the pipeline, thereby improving the mixing ratio accuracy. Similarly, the on-off valve member 202 and the control valve member 501 adopt the electromagnetic valve or the switch valve in the related art. The on-off valve member 202 and the control valve member 501 are both one-way valves to prevent the backflow of the raw gas. In addition, by monitoring the related parameters such as the temperature detection member 401 and the pressure detection member 104 to control the gas flow component, the fluctuation of the mixed gas amount in the mixing unit 400 can be reduced, thereby facilitating more accurate control of the gas mixing ratio.

[0059] As shown in FIG. 1, Figure 1 In some embodiments, the raw material delivery pipeline 100 includes a raw material tank 101 and a gas-liquid conversion unit 102 connected to the raw material tank 101. The raw material tank 101 contains a titanium source raw material liquid, and the gas-liquid conversion unit 102 is configured to convert the titanium source raw material liquid into a titanium source raw material gas.

[0060] The above-mentioned gas-liquid conversion unit 102 adopts a flash evaporator or other device components capable of converting liquid raw materials into gas. The raw material tank 101 is connected to a weight detection member 103 and a pressure detection member 104, and the raw material tank 101 is provided with a liquid level detection member 105. For example, the weight detection member 103 is an electronic scale arranged below the raw material tank 101, which is used to monitor the weight change of the raw material tank 101 in real time. The pressure detection member 104 is a pressure sensor arranged inside the raw material tank 101, which is used to monitor the pressure of the raw material tank 101 in real time. The liquid level detection member 105 is a liquid level sensor arranged inside the raw material tank 101, which is used to monitor the liquid level height inside the raw material tank 101.

[0061] In some embodiments, the raw material supply system further includes a raw material control component, an auxiliary control component, and a carrier gas control component. The raw material control component is used to regulate the on-off state of the raw material delivery pipeline 100. The auxiliary control component is used to regulate the on-off state of the auxiliary delivery pipeline 200. The carrier gas control component is used to regulate the on-off state of the carrier gas pipeline 500.

[0062] For example, the above-mentioned raw material control component, auxiliary control component, and carrier gas control component are PLC single-chip microcomputer control boards. The actual control logic and programming data of the single-chip microcomputer control boards can be set according to the related art, and will not be described herein.

[0063] As shown in FIG. 1, Figure 1As shown, the mixing unit 400 is provided with a temperature detection member 401 and a pressure detection member 104, and the mixing heating temperature in the mixing unit 400 is greater than the mixing heating temperature of the mixing common pipeline 300.

[0064] The mixing unit 400 can be a mixer, and the mixing unit 400 is surrounded by a heating layer. The mixing heating member 302, the carrier gas heating member 502, and the heating layer can adopt the same heating mode, for example, electric heating. The mixing heating temperature in the mixing unit 400 needs to be greater than the mixing heating temperature of the mixing common pipeline 300. Generally, the mixing heating temperature in the mixing unit 400 is 180-200℃, for example, the mixing heating temperature is 180℃, 190℃, or 200℃. The mixing heating temperature of the mixing common pipeline 300 needs to be greater than or equal to the gasification temperature of the titanium source raw material gas. When the titanium source raw material gas is titanium tetrachloride, the mixing heating temperature of the mixing common pipeline 300 is 140-150℃, for example, the mixing heating temperature is 140℃, 145℃, or 150℃.

[0065] The above arrangement can ensure that the titanium source raw material gas is preheated to an appropriate temperature before entering the mixing unit 400, and avoid the titanium source raw material gas originally in the mixing unit 400 from being liquefied due to the influence of the relatively low-temperature silicon source raw material gas.

[0066] In addition, the raw material supply system of the present application further includes a combustion unit 600 for receiving the gas mixed and heated by the mixing unit 400 and depositing to prepare quartz glass. The combustion unit 600 can be a burner, and the combustion unit 600 deposits the raw material gas mixed and heated to prepare quartz glass.

[0067] Titanium tetrachloride liquid is injected into the raw material tank 101, and when the liquid level of the titanium source raw material liquid in the raw material tank 101 reaches a certain height, the liquid level detection member 105 sends a signal to the raw material control member and stops liquid supplement. The pressure in the raw material tank 101 is adjusted and controlled to deliver titanium tetrachloride liquid to the gas-liquid conversion unit 102, and the gas-liquid conversion unit 102 converts the titanium tetrachloride liquid into titanium tetrachloride gas. When the gas-liquid conversion unit 102 is a vaporizer, the temperature of the vaporizer is set to 150℃, and the heating temperature in the mixing unit 400 is maintained at 180℃.

[0068] In the embodiment of the present application, several exemplary use processes of the raw material supply system are as follows:

[0069] 1. Control the opening and closing valves 202 on the argon carrier gas pipeline 500, the raw material delivery pipeline 100, and the auxiliary delivery sub-pipeline 201 not connected to the argon carrier gas pipeline 500 to be open, and close the auxiliary delivery sub-pipeline 201 connected to the mixing common pipeline 300. At this time, the silicon tetrachloride gas directly enters the mixing unit 400 and is mixed with the preheated titanium tetrachloride gas in a certain proportion in the mixing unit 400. The mixing heating temperature in the mixing unit 400 is greater than 180°C. The preheated argon gas serves as both a carrier gas flow and a heating gas flow to prevent the titanium tetrachloride gas from liquefying in the mixing unit 400.

[0070] 2. Control the on-off valves 202 on the argon carrier gas pipeline 500, the raw material delivery pipeline 100, and the auxiliary delivery sub-pipeline 201 connected to the argon carrier gas pipeline 500 to be open, and close the auxiliary delivery sub-pipeline 201 connected to the common mixing pipeline 300. At this time, the silicon tetrachloride gas is heated by the carrier gas heater 502 on the argon gas and enters the mixing unit 400. The preheated titanium tetrachloride gas and the heated silicon tetrachloride gas are mixed in a certain proportion in the mixing unit 400. At this time, the silicon tetrachloride gas in the mixing unit 400 is preheated by the carrier gas heater 502, thereby preventing the titanium tetrachloride gas from liquefying in the mixing unit 400.

[0071] 3. Control the opening and closing valves 202 on the nitrogen carrier gas pipeline 500, the raw material delivery pipeline 100, and the auxiliary delivery sub-pipeline 201 connected to the nitrogen carrier gas pipeline 500 to be opened. The raw material delivery pipeline 100 and the auxiliary delivery sub-pipeline 201 are merged into the mixing common pipeline 300 and are preheated as a whole by the mixing heating element 302. The preheated titanium tetrachloride gas and silicon tetrachloride gas are mixed in a certain proportion in the mixing unit 400.

[0072] Those skilled in the art will readily appreciate other embodiments of the present application after considering the specification and practicing the utility model disclosed herein. This application is intended to cover any variations, uses, or adaptations of the present application that follow the general principles of this application and include common knowledge or customary techniques in the art not disclosed herein. The description and examples are to be considered as exemplary only, and the true scope and spirit of the present application are indicated by the following claims.

[0073] It should be understood that the present application is not limited to the exact structure described above and shown in the drawings, and that various modifications and changes may be made without departing from the scope thereof. The scope of the present application is limited only by the appended claims.

Claims

1. A raw material supply system for preparing quartz glass, characterized in that: The system comprises: a raw material conveying pipeline (100) for conveying a titanium source raw material gas; an auxiliary conveying pipeline (200) for conveying a silicon source raw material gas; a mixed common pipeline (300) connected with the raw material conveying pipeline (100) and the auxiliary conveying pipeline (200) respectively, for preliminarily mixing the titanium source raw material gas and the silicon source raw material gas, and the mixed common pipeline (300) is provided with a mixed heating member (302) for heating the gas; a mixing unit (400) receiving the gas output by the mixed common pipeline (300) and configured to continue heating the mixed titanium source raw material gas and the silicon source raw material gas.

2. The raw material supply system for producing quartz glass according to claim 1, characterized by, The auxiliary conveying pipeline (200) comprises at least two auxiliary conveying sub-pipelines (201) connected in parallel, one of the auxiliary conveying sub-pipelines (201) is connected with the mixed common pipeline (300), and the other auxiliary conveying sub-pipeline (201) is connected with the mixing unit (400); wherein each of the auxiliary conveying sub-pipelines (201) is provided with an on-off valve member (202) for controlling the on-off state of the pipeline.

3. The raw material supply system for producing quartz glass according to claim 2, characterized by, The system further comprises: at least two carrier gas pipelines (500) connected with the auxiliary conveying sub-pipelines (201) one by one, the carrier gas pipelines (500) are used for inputting a carrier gas flow into the auxiliary conveying sub-pipelines (201), and each of the carrier gas pipelines (500) is provided with a control valve member (501) for controlling the on-off state of the pipeline.

4. The raw material supply system for producing quartz glass according to claim 3, wherein The carrier gas pipelines (500) are provided with carrier gas heating members (502) for heating the carrier gas flow.

5. The raw material supply system for producing quartz glass according to claim 3, wherein The raw material conveying pipeline (100), the auxiliary conveying pipeline (200) and the carrier gas pipelines (500) are all provided with gas flow control members (301).

6. The raw material supply system for preparing quartz glass according to any one of claims 1 to 5, characterized in that: the raw material conveying pipeline (100) comprises a raw material tank (101) and a gas-liquid conversion unit (102) connected with the raw material tank (101), the raw material tank (101) is filled with a titanium source raw material liquid, and the gas-liquid conversion unit (102) is configured to convert the titanium source raw material liquid into a titanium source raw material gas.

7. The raw material supply system for producing quartz glass according to claim 6, wherein The system further comprises: the raw material tank (101) is connected with a weight detection member (103) and a pressure detection member (104), and the raw material tank (101) is provided with a liquid level detection member (105).

8. The raw material supply system for producing quartz glass according to any one of claims 1 to 5, characterized by, The mixing unit (400) is provided with a temperature detection member (401) and a pressure detection member (104), and the mixing heating temperature in the mixing unit (400) is greater than the mixing heating temperature of the mixed common pipeline (300).

9. The raw material supply system for producing quartz glass according to any one of claims 1 to 5, characterized by, The mixing unit is a mixer, and the periphery of the mixer is wrapped with a heating layer.

10. The raw material supply system for producing quartz glass according to any one of claims 1 to 5, characterized by, The system further comprises a combustion unit (600) for receiving the gas mixed and heated by the mixing unit (400) and depositing to prepare quartz glass.

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