Semiconductor laser

Abstract

The utility model discloses a semiconductor laser, which comprises an optical fiber beam combiner, an output optical fiber and a plurality of space beam combining modules, each space beam combining module is connected with the input end of an optical fiber beam combiner through a beam combining optical fiber, and the output end of the optical fiber beam combiner is connected with an output optical fiber; the space beam combining module comprises a coupling lens, a step plate and a plurality of spectrum beam combining units, each step of the step plate is provided with a light beam reflecting mirror, each spectrum beam combining unit is arranged on the side edge of the step plate, the light beam reflecting mirrors are used for reflecting light beams emitted by the corresponding spectrum beam combining units to the coupling lens, and the light beams are coupled into the beam combining optical fiber through the coupling lens; the number of the light beam reflectors arranged on the steps of the step plate from top to bottom increases first and then decreases. The semiconductor laser has a relatively high utilization rate of a circular region of the optical fiber numerical aperture, can accommodate more light beams in the optical fiber numerical aperture, and is relatively high in output power.

Description

TECHNICAL FIELD

[0001] The utility model belongs to the technical field of laser, especially relates to a semiconductor laser. BACKGROUND

[0002] The semiconductor laser has the advantages of high efficiency, compact structure, low cost and high reliability, is widely used in the fields of optical fiber communication, optical disc, laser printer, laser scanner, laser pointer (laser pen) and the like, and is the laser with the largest production quantity.

[0003] However, the single semiconductor laser single tube has low output power, so it is required to combine the beams output by multiple semiconductor laser single tubes to obtain higher power output; after the beams output by the semiconductor tube laser single tubes are combined by the space combining technology, the overall light spot formed is rectangular, the rectangular light spot only occupies part of the circular area on the coupling lens satisfying the numerical aperture of the optical fiber, the numerical aperture of the optical fiber is wasted, and the output power of the laser is limited. UTILIZY MODEL CONTENT

[0004] In view of the above problems, the utility model discloses a semiconductor laser to overcome the above problems or at least partially solve the above problems.

[0005] In order to realize the above purpose, the utility model adopts the following technical scheme:

[0006] The utility model discloses a semiconductor laser, including optical fiber combiner, output optical fiber and multiple space combining modules.

[0007] Each space combining module is connected with the input end of the optical fiber combiner through the combining optical fiber, and the output end of the optical fiber combiner is connected with the output optical fiber.

[0008] The space combining module includes a coupling lens, a stepped plate and multiple spectrum combining units, each step of the stepped plate is provided with a beam reflector, each spectrum combining unit is arranged on the side of the stepped plate, the beam reflector is used to reflect the light beam emitted by the corresponding spectrum combining unit to the coupling lens, and the light beam is coupled into the combining optical fiber through the coupling lens, and the number of beam reflectors arranged on the steps from top to bottom of the stepped plate increases first and then decreases.

[0009] Further, multiple spectrum combining units are arranged on both sides of the stepped plate.

[0010] Further, only one beam reflector is arranged on the uppermost step and the lowermost step of the stepped plate, and two beam reflectors are arranged on the remaining steps.

[0011] Further, the number of the spatial beam combining modules is seven, one of which is coaxial with the output fiber, and the other six are arranged in a snowflake pattern.

[0012] Further, the spectral beam combining unit comprises a first light emitting array, a second light emitting array, a third light emitting array, a fourth light emitting array, a first large reflector, a second large reflector, a first prism, a second prism and a beam combining assembly.

[0013] The first prism is an inverted isosceles triangle, the first light emitting array and the second light emitting array are respectively arranged on the two sides of the first prism along the X-axis direction, the first light emitting array comprises a first laser single tube array and a first reflector group, the first reflector group is used for combining the light beams emitted by the first laser single tube array to one side of the first prism, the second light emitting array comprises a second laser single tube array and a second reflector group, the second reflector group is used for combining the light beams emitted by the second laser single tube array to the other side of the first prism; the first prism is used for reflecting the light beams emitted by the first light emitting array and the second light emitting array to the Y-axis direction, and the first large reflector is used for reflecting the light beams emitted by the first prism to the Z-axis direction.

[0014] The second prism is an inverted isosceles triangle, the second large reflector and the first large reflector, and the second prism and the first prism are all arranged in a staggered manner in the Z-axis direction, the second large reflector is located on the side of the first large reflector away from the beam combining assembly, and the second prism is located on the side of the first prism away from the beam combining assembly; the third light emitting array and the fourth light emitting array are respectively arranged on the two sides of the second prism along the X-axis direction, the third light emitting array comprises a third laser single tube array and a third reflector group, the third reflector group is used for combining the light beams emitted by the third laser single tube array to one side of the second prism, the fourth light emitting array comprises a fourth laser single tube array and a fourth reflector group, the fourth reflector group is used for combining the light beams emitted by the fourth laser single tube array to the other side of the second prism; the second prism is used for reflecting the light beams emitted by the third light emitting array and the fourth light emitting array to the Y-axis direction, and the second large reflector is used for reflecting the light beams emitted by the second prism to the Z-axis direction.

[0015] The beam combining module is used for spectral beam combining of the light beams emitted by the first large reflector and the second large reflector.

[0016] Further, the first prism is an isosceles right triangle; the first laser single-tube array includes a plurality of first semiconductor laser single tubes, each of the first semiconductor laser single tubes emits a light beam along the Z-axis direction, the first mirror group includes a plurality of first small mirrors, the plurality of first small mirrors are arranged along the X-axis direction, the plurality of first semiconductor laser single tubes are located on a side of the plurality of first small mirrors close to the beam combining assembly, and the plurality of first semiconductor laser single tubes and the plurality of first small mirrors are arranged in a stepped manner along the Y-axis direction; the second laser single-tube array includes a plurality of second semiconductor laser single tubes, each of the second semiconductor laser single tubes emits a light beam along the Z-axis direction, the second mirror group includes a plurality of second small mirrors, the plurality of second small mirrors are arranged along the X-axis direction, the plurality of second semiconductor laser single tubes are located on a side of the plurality of second small mirrors close to the beam combining assembly, and the plurality of second semiconductor laser single tubes and the plurality of second small mirrors are arranged in a stepped manner along the Y-axis direction;

[0017] The second prism is an isosceles right triangle; the third laser single-tube array includes a plurality of third semiconductor laser single tubes, each of the third semiconductor laser single tubes emits a light beam along the Z-axis direction, the third mirror group includes a plurality of third small mirrors, the plurality of third small mirrors are arranged along the X-axis direction, the plurality of third semiconductor laser single tubes are located on a side of the plurality of third small mirrors away from the beam combining assembly, and the plurality of third semiconductor laser single tubes and the plurality of third small mirrors are arranged in a stepped manner along the Y-axis direction; the fourth laser single-tube array includes a plurality of fourth semiconductor laser single tubes, each of the fourth semiconductor laser single tubes emits a light beam along the Z-axis direction, the fourth mirror group includes a plurality of fourth small mirrors, the plurality of fourth small mirrors are arranged along the X-axis direction, the plurality of fourth semiconductor laser single tubes are located on a side of the plurality of fourth small mirrors away from the beam combining assembly, and the plurality of fourth semiconductor laser single tubes and the plurality of fourth small mirrors are arranged in a stepped manner along the Y-axis direction.

[0018] Further, the first laser single-tube array includes a plurality of first semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the first mirror group includes a plurality of first small mirrors, the plurality of first small mirrors are arranged along the X-axis direction, and each of the first small mirrors is arranged obliquely, and the plurality of first semiconductor laser single tubes are located on a side of the plurality of first small mirrors close to the beam combining assembly; the second laser single-tube array includes a plurality of second semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the second mirror group includes a plurality of second small mirrors, the plurality of second small mirrors are arranged along the X-axis direction, and each of the second small mirrors is arranged obliquely, and the plurality of second semiconductor laser single tubes are located on a side of the plurality of second small mirrors close to the beam combining assembly.

[0019] The third laser single-tube array includes a plurality of third semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the third mirror group includes a plurality of third small mirrors, the plurality of third small mirrors are arranged along the X-axis direction, and each of the third small mirrors is arranged obliquely, and the plurality of third semiconductor laser single tubes are located on a side of the plurality of third small mirrors away from the beam combining assembly; the fourth laser single-tube array includes a plurality of fourth semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the fourth mirror group includes a plurality of fourth small mirrors, the plurality of fourth small mirrors are arranged along the X-axis direction, and each of the fourth small mirrors is arranged obliquely, and the plurality of fourth semiconductor laser single tubes are located on a side of the plurality of fourth small mirrors away from the beam combining assembly.

[0020] Further, the spectral beam combining unit further includes a lens pair.

[0021] The lens pair is arranged on an optical path between the beam combining assembly and the first large mirror.

[0022] Further, the spectral beam combining unit further includes a filter.

[0023] The filter is arranged on an optical path between the beam combining assembly and the first large mirror.

[0024] Further, the beam combining assembly includes a conversion lens, an output grating, a turning mirror and a cavity mirror.

[0025] The conversion lens, the output grating and the cavity mirror are sequentially arranged in an output direction of the optical path, and the output grating and the cavity mirror are both located on a side of the conversion lens close to the first large mirror, and the turning mirror is used to reflect the light beam output by the conversion lens to the output grating.

[0026] The utility model discloses a semiconductor laser, through the number of light beam reflector that the stepped board is set on the step from top to bottom first increases then reduces, make the light spot profile that the spatial beam combination unit carries out spatial beam combination forms more close to circular, can better match the circular area of the numerical aperture of optical fiber on coupling lens, the numerical aperture of optical fiber inclusions more light beam, and then improved the output power of semiconductor laser.

[0027] The utility model discloses a semiconductor laser, through the number of light beam reflector that the stepped board is set on the step from top to bottom first increases then reduces, make the light spot profile that the spatial beam combination unit carries out spatial beam combination forms more close to circular, can better match the circular area of the numerical aperture of optical fiber on coupling lens, the numerical aperture of optical fiber inclusions more light beam, and then improved the output power of semiconductor laser. BRIEF DESCRIPTION OF DRAWINGS

[0028] Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments with reference made to the accompanying drawings. The drawings are for purposes of illustration only and are not intended to be limiting in any respect. Like reference numerals are used throughout the drawings to denote the same or similar parts. In the drawings:

[0029] Figure 1 It is a semiconductor laser's perspective view in an embodiment of the utility model;

[0030] Figure 2 It is the left view of semiconductor laser in an embodiment of the utility model;

[0031] Figure 3 It is the perspective view of spatial beam combination module in an embodiment of the utility model;

[0032] Figure 4 It is the plan view of spatial beam combination module in an embodiment of the utility model;

[0033] Figure 5 It is the perspective view of spatial beam combination module of removing spectral beam combination unit in an embodiment of the utility model;

[0034] Figure 6 It is the front view of spatial beam combination module of removing spectral beam combination unit in an embodiment of the utility model;

[0035] Figure 7 It is the plan view of spatial beam combination module of removing spectral beam combination unit in an embodiment of the utility model;

[0036] Figure 8 It is the shape diagram of the light spot of spatial beam combination in a coupling lens in an embodiment of the utility model;

[0037] Figure 9 It is the perspective view of local spectral beam combination unit in an embodiment of the utility model;

[0038] Figure 10 It is the plan view of spectral beam combination unit in an embodiment of the utility model.

[0039] In the figure: 1, fiber combiner; 2, output fiber; 3, spatial beam combining module; 4, combined beam fiber; 5, coupling lens; 6, step board; 7, spectral beam combining unit; 8, beam reflector; 9, first light emitting array; 10, second light emitting array; 11, third light emitting array; 12, fourth light emitting array; 13, first large reflector; 14, second large reflector; 15, first prism; 16, second prism; 17, lens pair; 18, conversion lens; 19, output grating; 20, turning mirror; 21, cavity mirror; 22, range of fiber NA; 23, spatial beam combining spot. DETAILED DESCRIPTION

[0040] In order to make the purpose, technical scheme and advantages of the utility model more clear, the following will combine the utility model specific embodiment and corresponding drawing to make the utility model technical scheme clear, complete description. Obviously, the described embodiment is only a part of the utility model embodiment, not all the embodiments. Based on the embodiment in the utility model, all other embodiments obtained by the person skilled in the art without making creative labor are within the scope of the utility model protection.

[0041] The technical scheme provided by each embodiment of the utility model is described in detail below with reference to the drawings.

[0042] One embodiment of the utility model provides a semiconductor laser, as shown in Figure 1 and Figure 2 The semiconductor laser includes a fiber combiner 1, an output fiber 2 and a plurality of spatial beam combining modules 3.

[0043] Specifically, each spatial beam combining module 3 is connected with the input end of the fiber combiner 1 through a combined beam fiber 4, and the output end of the fiber combiner 1 is connected with the output fiber 2; in this way, the light beams output by the plurality of spatial beam combining modules 3 are combined into the output fiber 2 through the fiber combiner 1, realizing the fiber combining of the light beams, and by increasing the number of spatial beam combining modules 3, the semiconductor laser can have higher output power.

[0044] In addition, as shown in Figures 3 to 7As shown, the spatial beam combining module includes a coupling lens 5, a step plate 6 and a plurality of spectral beam combining units 7, each step of the step plate 6 is provided with a beam reflector 8, each spectral beam combining unit 7 is arranged on the side of the step plate 6, and the coupling lens 5 is arranged at the lowest end of the step plate 6, and the beam reflector 8 is used to reflect the light beam emitted by the corresponding spectral beam combining unit 7 to the coupling lens 5, and couple it into the beam combining optical fiber 4 through the coupling lens 5 to realize spatial beam combining of the light beam, and the output power of the semiconductor laser can be increased by increasing the number of spectral beam combining units 7; wherein, the number of beam reflectors 8 arranged on the steps from top to bottom of the step plate 6 first increases and then decreases, that is, the number of beam reflectors 8 arranged on the uppermost step and the lowermost step of the step plate 6 is the least, and the number of beam reflectors 8 arranged on the step in the middle of the step plate 6 is the largest, so that after the light beams output by the multiple spectral beam combining units 7 are reflected by the beam reflector 8, the light spot profile formed on the coupling lens 5 is closer to a circle, so as to improve the utilization rate of the circular area of ​​the optical fiber numerical aperture on the coupling lens 5.

[0045] In summary, in the semiconductor laser of this embodiment, by first increasing and then decreasing the number of beam reflectors arranged on the steps of the step plate from top to bottom, the light spot profile formed after the spectral beam combining unit performs spatial beam combining is closer to a circle, which can better match the circular area on the coupling lens that meets the numerical aperture of the optical fiber, accommodate more light beams within the numerical aperture of the optical fiber, and thereby improve the output power of the semiconductor laser.

[0046] In this embodiment, if Figure 3 and Figure 4 As shown, a plurality of spectral beam combining units 7 are respectively arranged on both sides of the step plate 6 , so that a greater number of spectral beam combining units 7 can be arranged in the spatial beam combining module 3 to increase the output power of the semiconductor laser.

[0047] And, as Figures 5 to 7 As shown, only one beam reflector 8 is provided on each of the uppermost and lowermost steps of the stepped plate 6, and two beam reflectors 8 are provided on the remaining steps. The light beams output by the spectral beam combining unit 7 are spatially combined, as shown in FIG. Figure 8 As shown, the light spot 23 after spatial beam combining formed on the coupling lens 5 is a light spot composed of a large rectangle and two small rectangles. The light spot is basically located within the range 22 of the optical fiber NA. Compared with setting one beam reflector for each step in all steps or setting two beam reflectors for each step in all steps, the light spot profile formed by the spatial beam combining arrangement in this embodiment is closer to a circle, which can better match the circular area on the coupling lens that meets the numerical aperture, so as to improve its utilization rate.

[0048] In addition, if Figure 1As shown, the number of spatial beam combining modules 3 is seven, one of which has a corresponding beam combining fiber 4 coaxial with the output fiber 2, and the other six have corresponding beam combining fibers 4 arranged in a snowflake pattern. In this way, the arrangement of the spatial beam combining modules is more compact, and the semiconductor laser has a smaller volume.

[0049] In this embodiment, as shown in Figure 9 and Figure 10 The spectral beam combining unit includes a first light emitting array 9, a second light emitting array 10, a third light emitting array 11, a fourth light emitting array 12, a first large mirror 13, a second large mirror 14, a first prism 15, a second prism 16, and a beam combining assembly.

[0050] Specifically, the first prism 15 is an inverted isosceles triangle, the first light emitting array 9 and the second light emitting array 10 are arranged on both sides of the first prism 15 along the X-axis direction, the first light emitting array 9 includes a first laser single-tube array and a first mirror group, the first mirror group is used to combine the light beams emitted by the first laser single-tube array to one side of the inclined surface of the first prism 15, and the first mirror group realizes equal-path spatial beam combining of the first laser single-tube array, the second light emitting array 10 includes a second laser single-tube array and a second mirror group, the second mirror group is used to combine the light beams emitted by the second laser single-tube array to the other side of the inclined surface of the first prism 15, and the second mirror group realizes equal-path spatial beam combining of the second laser single-tube array; the first prism 15 is used to reflect the light beams emitted by the first light emitting array 9 and the second light emitting array 10 to the Y-axis direction, the first large mirror 13 is located below the first prism 15 and is used to reflect the light beams emitted by the first prism 15 to the Z-axis direction; the first prism 15 and the first large mirror 13 realize equal-path spatial beam combining of the light beams emitted by the first light emitting array 9 and the second light emitting array 10.

[0051] In addition, the second prism 16 is an inverted isosceles triangle, the second large mirror 14 and the first large mirror 13 are parallel and are both misaligned in the Z-axis direction, the second prism 16 and the first prism 15 are parallel and are both misaligned in the Z-axis direction, the second large mirror 14 is located on the side of the first large mirror 13 away from the beam combining assembly, and the second prism 16 is located on the side of the first prism 15 away from the beam combining assembly; and the third light emitting array 11 and the fourth light emitting array 12 are respectively arranged on the two sides of the second prism 16 along the X-axis direction, the third light emitting array 11 includes a third laser single-tube array and a third mirror group, the third mirror group is used for combining the light beams emitted by the third laser single-tube array to one side of the second prism 16, and the third mirror group realizes equal-path spatial beam combining of the third laser single-tube array, the fourth light emitting array 12 includes a fourth laser single-tube array and a fourth mirror group, the fourth mirror group is used for combining the light beams emitted by the fourth laser single-tube array to the other side of the second prism 16, and the fourth mirror group realizes equal-path spatial beam combining of the fourth laser single-tube array; the second prism 16 is used for reflecting the light beams emitted by the third light emitting array 11 and the fourth light emitting array 12 to the Y-axis direction, and the second large mirror 14 is located below the second prism 16 and is used for reflecting the light beams emitted by the second prism 16 to the Z-axis direction. The second prism 16 and the second large mirror 14 realize equal-path spatial beam combining of the light beams emitted by the third light emitting array 11 and the fourth light emitting array 12, and the beam combining assembly is used for spectrally combining the light beams emitted by the first large mirror 13 and the second large mirror 14, so that the light beams emitted by the first light emitting array 9, the second light emitting array 10, the third light emitting array 11 and the fourth light emitting array 12 are combined into one light beam.

[0052] In the spectral beam combining process, because the four light emitting arrays have more light emitting units (semiconductor laser single tubes) than one light emitting array, the above structure can improve the power of the light beam after spectral beam combining, provide a light beam with higher power for spatial beam combining and fiber beam combining, and further improve the output power of the semiconductor laser.

[0053] Further, the first prism 15 is an isosceles right triangle, i.e., the two side slopes of the first prism 15 form a 90° angle; the first laser single-tube array includes a plurality of first semiconductor laser single tubes, each first semiconductor laser single tube emits a light beam along the Z-axis direction, the first mirror group includes a plurality of first small mirrors, each first semiconductor laser single tube corresponds to each first small mirror in one-to-one correspondence, the first small mirror reflects the light beam output by the first semiconductor laser single tube to one side slope of the first prism 15, so that the first semiconductor laser single tube performs equal-path spatial beam combining through the first small mirror, the plurality of first small mirrors are arranged along the X-axis direction, the plurality of first semiconductor laser single tubes are located on one side of the plurality of first small mirrors close to the beam combining assembly, and the plurality of first semiconductor laser single tubes and the plurality of first small mirrors are arranged in a stepped manner along the Y-axis direction, so that the light beam emitted by each first semiconductor laser single tube can be reflected by the corresponding first small mirror to one side slope of the first prism 15, effectively preventing the light beam emitted by the first semiconductor laser single tube from being blocked; the second laser single-tube array includes a plurality of second semiconductor laser single tubes, each second semiconductor laser single tube emits a light beam along the Z-axis direction, the second mirror group includes a plurality of second small mirrors, each second semiconductor laser single tube corresponds to each second small mirror in one-to-one correspondence, the second small mirror reflects the light beam output by the second semiconductor laser single tube to the other side slope of the first prism 15, so that the second semiconductor laser single tube performs equal-path spatial beam combining through the second small mirror, the plurality of second small mirrors are arranged along the X-axis direction, the plurality of second semiconductor laser single tubes are located on one side of the plurality of second small mirrors close to the beam combining assembly, and the plurality of second semiconductor laser single tubes and the plurality of second small mirrors are arranged in a stepped manner along the Y-axis direction, so that the light beam emitted by each second semiconductor laser single tube can be reflected by the corresponding second small mirror to the other side slope of the first prism 15, effectively preventing the light beam emitted by the second semiconductor laser single tube from being blocked.

[0054] In addition, the second prism 16 is an isosceles right triangle, that is, the two side oblique surfaces of the second prism 16 are 90° apart; the third laser single tube array includes a plurality of third semiconductor laser single tubes, each third semiconductor laser single tube emits a light beam along the Z-axis direction, the third reflector group includes a plurality of third small reflectors, each third semiconductor laser single tube corresponds to each third small reflector one by one, the third small reflector reflects the light beam output by the third semiconductor laser single tube to one side oblique surface of the second prism 16, so that the third semiconductor laser single tube is subjected to equal optical path spatial beam combining through the third small reflector, the plurality of third small reflectors are arranged along the X-axis direction, the plurality of third semiconductor laser single tubes are located on the side of the plurality of third small reflectors away from the beam combining component, and the plurality of third semiconductor laser single tubes and the plurality of third small reflectors are arranged in a stepped manner in the Y-axis direction, so that the light beam emitted by each third semiconductor laser single tube can be reflected by the corresponding third small reflector to one side oblique surface of the second prism 16, effectively preventing The light beam emitted by the third semiconductor laser tube is blocked; the fourth laser tube array includes multiple fourth semiconductor laser tubes, each fourth semiconductor laser tube emits a light beam along the Z-axis direction, the fourth reflector group includes multiple fourth small reflectors, each fourth semiconductor laser tube corresponds to each fourth small reflector one by one, the fourth small reflector reflects the light beam output by the fourth semiconductor laser tube to the other side of the inclined surface of the second prism 16, so that the fourth semiconductor laser tube is combined in equal optical path space through the fourth small reflector, the multiple fourth small reflectors are arranged along the X-axis direction, the multiple fourth semiconductor laser tubes are located on the side of the multiple fourth small reflectors away from the beam combining assembly, and the multiple fourth semiconductor laser tubes and the multiple fourth small reflectors are arranged in a stepped manner in the Y-axis direction, so that the light beam emitted by each fourth semiconductor laser tube can be reflected by the corresponding fourth small reflector to the other side of the inclined surface of the fourth prism, effectively preventing the light beam emitted by the fourth semiconductor laser tube from being blocked.

[0055] In this way, the output power of the semiconductor laser can be increased by increasing the number of the first semiconductor laser tube, the second semiconductor laser tube, the third semiconductor laser tube, and the fourth semiconductor laser tube. In the semiconductor laser of this embodiment, by combining spectral beam combining, spatial beam combining, and fiber beam combining, the light beams output by many semiconductor laser tubes are merged into a single beam, significantly improving the output power of the semiconductor laser. For example, the semiconductor laser is provided with 7 spatial beam combining modules, each of which is provided with 14 spectral beam combining units, and each laser tube array is provided with 14 semiconductor laser tubes. In this way, the semiconductor laser will have as many as 15×4×14×7=5880 semiconductor laser tubes.

[0056] In other embodiments, the first laser single-tube array includes a plurality of first semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the first mirror group includes a plurality of first small mirrors, the plurality of first small mirrors are arranged along the X-axis direction, and each of the first small mirrors is arranged obliquely, and the plurality of first semiconductor laser single tubes are located on one side of the plurality of first small mirrors close to the beam combining assembly; the second laser single-tube array includes a plurality of second semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the second mirror group includes a plurality of second small mirrors, the plurality of second small mirrors are arranged along the X-axis direction, and each of the second small mirrors is arranged obliquely, and the plurality of second semiconductor laser single tubes are located on one side of the plurality of second small mirrors close to the beam combining assembly.

[0057] The third laser single-tube array includes a plurality of third semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the third mirror group includes a plurality of third small mirrors, the plurality of third small mirrors are arranged along the X-axis direction, and each of the third small mirrors is arranged obliquely, and the plurality of third semiconductor laser single tubes are located on one side of the plurality of third small mirrors away from the beam combining assembly; the fourth laser single-tube array includes a plurality of fourth semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the fourth mirror group includes a plurality of fourth small mirrors, the plurality of fourth small mirrors are arranged along the X-axis direction, and each of the fourth small mirrors is arranged obliquely, and the plurality of fourth semiconductor laser single tubes are located on one side of the plurality of fourth small mirrors away from the beam combining assembly.

[0058] By arranging each of the first small mirrors, each of the second small mirrors, each of the third small mirrors, and each of the fourth small mirrors obliquely, the light beams reflected by each of the first small mirrors, each of the second small mirrors, each of the third small mirrors, and each of the fourth small mirrors have a certain upward inclination angle, and thus the light beams emitted by each of the first semiconductor laser single tubes can be reflected by the corresponding first small mirror to one side of the first prism, the light beams emitted by each of the second semiconductor laser single tubes can be reflected by the corresponding second small mirror to the other side of the first prism, the light beams emitted by each of the third semiconductor laser single tubes can be reflected by the corresponding third small mirror to one side of the second prism, and the light beams emitted by each of the fourth semiconductor laser single tubes can be reflected by the corresponding fourth small mirror to the other side of the second prism, preventing the light beams emitted by the first semiconductor laser single tubes, the second semiconductor laser single tubes, the third semiconductor laser single tubes, and the fourth semiconductor laser single tubes from being blocked.

[0059] In the present embodiment, as shown in FIG. 1, the spectral beam combining unit further includes a lens pair 17. Figure 10

[0060] ​The lens pair 17 is arranged on the light path between the beam combination assembly and the first large mirror 13, and is used to compress the width of the light beams reflected by the first large mirror 13 and the second large mirror 14 on the X axis to be smaller, so that the light beams can more easily enter the beam combination assembly. Of course, the lens pair can also be replaced by a filter arranged on the light path between the beam combination assembly and the first large mirror, and used to limit the divergence angle of the light beams reflected by the first large mirror and the second large mirror.

[0061] Further, as shown in Figure 10 The beam combination assembly includes a conversion lens 18, an output grating 19, a turning mirror 20 and a cavity mirror 21.

[0062] The conversion lens 18, the output grating 19 and the cavity mirror 21 are sequentially arranged in the output direction of the light path, and the spectral beam combination of the light beams output by the four light emitting arrays is realized through the conversion lens 18, the output grating 19 and the cavity mirror 21, and the light beams after the spectral beam combination are output by the cavity mirror 21; wherein the output grating can be a transmission grating or a reflection grating. Moreover, the output grating 19 and the cavity mirror 21 are both located on the side of the conversion lens 18 close to the first large mirror 13, and the turning mirror 20 is arranged on the light path between the conversion lens 18 and the output grating 19, and is used to reflect the light beams output by the conversion lens 18 to the output grating 19, so that the size of the overall light path is reduced while the length of the light path is maintained, and the structure of the semiconductor laser is more compact and smaller in volume.

[0063] The above is only a specific embodiment of the present application, and based on the above teaching of the present application, those skilled in the art can make other improvements or modifications on the basis of the above embodiment. Those skilled in the art should understand that the above specific description is only for better explanation of the purpose of the present application, and the protection scope of the present application should be subject to the protection scope of the claims.

Claims

1. A semiconductor laser, characterized by, The spatial beam combining module comprises a coupling lens, a stepped plate, and a plurality of spectral beam combining units, each step of the stepped plate is provided with a light beam mirror, each spectral beam combining unit is arranged on the side of the stepped plate, the light beam mirror is used for reflecting the light beam emitted by the corresponding spectral beam combining unit to the coupling lens, and the light beam is coupled into the beam combining fiber through the coupling lens, the number of light beam mirrors arranged on the steps from top to bottom of the stepped plate increases first and then decreases. A plurality of the spectral beam combining units are respectively arranged on both sides of the stepped plate. The uppermost step and the lowermost step of the stepped plate are each provided with only one light beam mirror, and the remaining steps are provided with two light beam mirrors.

2. The semiconductor laser of claim 1, wherein, The number of the spatial beam combining modules is seven, wherein the beam combining fiber corresponding to one of the spatial beam combining modules is coaxially arranged with the output fiber, and the beam combining fibers corresponding to the other six spatial beam combining modules are arranged in a snowflake shape.

3. The semiconductor laser of claim 2, wherein, The spectral beam combining unit comprises a first light emitting array, a second light emitting array, a third light emitting array, a fourth light emitting array, a first large mirror, a second large mirror, a first prism, a second prism, and a beam combining assembly; 4. The semiconductor laser of claim 1, wherein, The first prism is an inverted isosceles triangle, the first light emitting array and the second light emitting array are respectively arranged on both sides of the first prism along the X-axis direction, the first light emitting array comprises a first laser single-tube array and a first mirror group, the first mirror group is used for combining the light beams emitted by the first laser single-tube array to one side of the first prism, the second light emitting array comprises a second laser single-tube array and a second mirror group, the second mirror group is used for combining the light beams emitted by the second laser single-tube array to the other side of the first prism; the first prism is used for reflecting the light beams emitted by the first light emitting array and the second light emitting array to the Y-axis direction, and the first large mirror is used for reflecting the light beams emitted by the first prism to the Z-axis direction; 5. The semiconductor laser according to any one of claims 1 to 4, characterized in that, ​ ​ The second prism is an inverted isosceles triangle, the second large mirror and the first large mirror, and the second prism and the first prism are arranged in the Z-axis direction, the second large mirror is located on the side of the first large mirror away from the beam combination assembly, and the second prism is located on the side of the first prism away from the beam combination assembly; the third light emitting array and the fourth light emitting array are arranged on both sides of the second prism along the X-axis direction, the third light emitting array includes a third laser single tube array and a third mirror group, the third mirror group is used for combining the light beams emitted by the third laser single tube array to one side of the second prism, the fourth light emitting array includes a fourth laser single tube array and a fourth mirror group, the fourth mirror group is used for combining the light beams emitted by the fourth laser single tube array to the other side of the second prism; the second prism is used for reflecting the light beams emitted by the third light emitting array and the fourth light emitting array to the Y-axis direction, and the second large mirror is used for reflecting the light beams emitted by the second prism to the Z-axis direction. The beam combination module is used for spectrally combining the light beams emitted by the first large mirror and the second large mirror.

6. The semiconductor laser of claim 5, wherein, The first prism is an isosceles right triangle; the first laser single tube array includes a plurality of first semiconductor laser single tubes, each of the first semiconductor laser single tubes emits a light beam along the Z-axis direction, the first mirror group includes a plurality of first small mirrors, the plurality of first small mirrors are arranged along the X-axis direction, the plurality of first semiconductor laser single tubes are located on the side of the plurality of first small mirrors close to the beam combination assembly, and the plurality of first semiconductor laser single tubes and the plurality of first small mirrors are arranged in a stepped manner in the Y-axis direction; the second laser single tube array includes a plurality of second semiconductor laser single tubes, each of the second semiconductor laser single tubes emits a light beam along the Z-axis direction, the second mirror group includes a plurality of second small mirrors, the plurality of second small mirrors are arranged along the X-axis direction, the plurality of second semiconductor laser single tubes are located on the side of the plurality of second small mirrors close to the beam combination assembly, and the plurality of second semiconductor laser single tubes and the plurality of second small mirrors are arranged in a stepped manner in the Y-axis direction; The second prism is an isosceles right triangle; the third laser single-tube array includes a plurality of third semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the third mirror group includes a plurality of third small mirrors, the plurality of third small mirrors are arranged along the X-axis direction, the plurality of third semiconductor laser single tubes are located on the side of the plurality of third small mirrors away from the beam combining assembly, and the plurality of third semiconductor laser single tubes and the plurality of third small mirrors are arranged in a stepped manner in the Y-axis direction; the fourth laser single-tube array includes a plurality of fourth semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the fourth mirror group includes a plurality of fourth small mirrors, the plurality of fourth small mirrors are arranged along the X-axis direction, the plurality of fourth semiconductor laser single tubes are located on the side of the plurality of fourth small mirrors away from the beam combining assembly, and the plurality of fourth semiconductor laser single tubes and the plurality of fourth small mirrors are arranged in a stepped manner in the Y-axis direction.

7. The semiconductor laser of claim 5, wherein, The first laser single-tube array includes a plurality of first semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the first mirror group includes a plurality of first small mirrors, the plurality of first small mirrors are arranged along the X-axis direction, and each of the first small mirrors is arranged obliquely, and the plurality of first semiconductor laser single tubes are located on the side of the plurality of first small mirrors close to the beam combining assembly; the second laser single-tube array includes a plurality of second semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the second mirror group includes a plurality of second small mirrors, the plurality of second small mirrors are arranged along the X-axis direction, and each of the second small mirrors is arranged obliquely, and the plurality of second semiconductor laser single tubes are located on the side of the plurality of second small mirrors close to the beam combining assembly; The third laser single-tube array includes a plurality of third semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the third mirror group includes a plurality of third small mirrors, the plurality of third small mirrors are arranged along the X-axis direction, and each of the third small mirrors is arranged obliquely, and the plurality of third semiconductor laser single tubes are located on the side of the plurality of third small mirrors away from the beam combining assembly; the fourth laser single-tube array includes a plurality of fourth semiconductor laser single tubes, each of which emits a light beam along the Z-axis direction, the fourth mirror group includes a plurality of fourth small mirrors, the plurality of fourth small mirrors are arranged along the X-axis direction, and each of the fourth small mirrors is arranged obliquely, and the plurality of fourth semiconductor laser single tubes are located on the side of the plurality of fourth small mirrors away from the beam combining assembly.

8. The semiconductor laser of claim 5, wherein, The spectral beam combining unit further includes a lens pair; The lens pair is arranged on the optical path between the beam combining assembly and the first large mirror.

9. The semiconductor laser of claim 5, wherein, The spectral beam combining unit further includes a filter; The filter is arranged on the optical path between the beam combining assembly and the first large mirror.

10. The semiconductor laser of claim 5, wherein, The beam combining assembly comprises a conversion lens, an output grating, a turning mirror and a cavity mirror; The conversion lens, the output grating and the cavity mirror are sequentially arranged in an output direction of an optical path, and the output grating and the cavity mirror are both located on a side of the conversion lens close to the first large mirror, and the turning mirror is used for reflecting the light beam output by the conversion lens to the output grating.

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