Deposition carrying platform structure of CVD (Chemical Vapor Deposition) equipment
By adding a lifting linkage mechanism to the deposition stage of the CVD equipment, the problems of uneven film thickness at the edge of the wafer source and difficulty in wafer handling were solved, achieving uniform film thickness and convenient operation, and improving product yield.
Patent Information
- Application Number
- CN202423059255.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-12
- Publication Date
- 2025-10-28
- Estimated Expiration
- 2034-12-12
AI Technical Summary
In existing CVD equipment, uneven film thickness at the edge of the wafer and the wafer handling process can easily lead to scratches and contamination of the wafer, affecting product yield.
A lifting linkage mechanism is added to the deposition stage of the CVD equipment. Through the cooperation of the ejector pin hole and the ejector pin, the wafer source can be raised and removed from the deposition groove during the deposition process. The lifting and lowering of the wafer source in each group of grooves can be independently controlled, which improves the uniformity of film thickness and simplifies the wafer removal operation.
It improves the overall uniformity of CVD membranes, reduces scratches and contamination of the film source, and increases product yield.
Smart Images
Figure CN223481274U_ABST
Abstract
Description
Technical Field
[0001] This utility model belongs to the field of LED chip technology, specifically relating to a deposition stage structure for CVD equipment. Background Technology
[0002] Chemical vapor deposition (CVD) is the most widely used deposition technique in the semiconductor industry. For example... Figure 1 As shown, current CVD equipment deposition stages in the LED industry typically include a wafer stage 2 for supporting multiple wafer sources 1 (wafers), and a heating unit 3 located below the wafer stage to provide the reaction temperature required during the formation of the deposition film. The wafer stage has multiple deposition grooves 4 for placing the wafer sources. The deposition stage is installed inside the reaction chamber 5 of the CVD equipment, and the bottom of the reaction chamber has an exhaust port. Figure 1 (Not shown in the image) The top of the reaction chamber is hinged to a top cover 7, which has an air inlet 8 for providing gaseous or vaporous chemicals for the deposition process. Because the thickness of the substrate is less than the depth of the deposition groove, the airflow distribution at the edge of the substrate is affected by the obstruction of the deposition groove during deposition, resulting in inconsistent film thickness at the substrate edge compared to other locations, thus reducing the uniformity of the deposited CVD film. Furthermore, after deposition, existing CVD films require operators to pry the substrate up from a notch 9 on one side of the deposition groove and then use a suction pen to pick up the back of the substrate. This operation easily causes the substrate to rub against the stage, resulting in scratches and contamination on the substrate surface, affecting product yield. Utility Model Content
[0003] This invention addresses the shortcomings of the prior art by providing a deposition stage structure for a CVD equipment. By adding a lifting linkage mechanism, each wafer source can be raised and detached from the deposition groove during the deposition process. This eliminates the influence of the deposition groove on the film thickness at the edge of the wafer source and facilitates the operator's wafer handling, thereby improving the uniformity of film thickness, reducing wafer source scratches and contamination, and improving product yield.
[0004] To achieve the above objectives, the technical solution of this utility model is as follows:
[0005] A deposition stage structure for a CVD equipment is characterized by comprising a wafer stage and a heating unit. The wafer stage is located at the upper end of the heating unit. The wafer stage is provided with multiple deposition grooves. Each deposition groove has a pin hole at its bottom. The pin hole extends downward through the heating unit. A pin is slidably connected inside the pin hole. The lower end of the pin is connected to a lifting linkage mechanism for driving it to move up and down along the pin hole.
[0006] Preferably, the number of thimble holes in each deposition groove is three. The three thimble holes are distributed in a "pin" shape, and the bottom ends of the thimbles inside are commonly connected to a support plate, which is connected to the lifting linkage mechanism.
[0007] Preferably, the multiple deposition grooves are divided into three groups. The three groups of deposition grooves are distributed in a concentric circle manner with the center of the wafer stage as the center of the circle. From the inside to the outside, they are the central groove group, the middle groove group, and the outer groove group in sequence.
[0008] Preferably, the number of grooves in the central groove group is 1, and it is located at the center of the wafer stage. The number of grooves in the middle groove group is 6 and they are distributed in a circumferential array. The number of grooves in the outer groove group is 12 and they are distributed in a circumferential array.
[0009] Preferably, the lifting linkage mechanism includes a first lifting mechanism for controlling the lifting of the thimbles inside each groove of the central groove group, a second lifting mechanism for controlling the lifting of the thimbles inside each groove of the middle groove group, and a third lifting mechanism for controlling the lifting of the thimbles inside each groove of the outer groove group.
[0010] Preferably, the first lifting mechanism includes a first air cylinder and a first lifting frame. The first air cylinder is connected to the first lifting frame. The second lifting mechanism includes a second air cylinder and a second lifting frame. The second air cylinder is connected to the second lifting frame. The third lifting mechanism includes a third air cylinder and a third lifting frame. The third air cylinder is connected to the third lifting frame.
[0011] Preferably, the vertical cross-sections of the first lifting frame, the second lifting frame, and the third lifting frame are all U-shaped structures and are distributed from top to bottom in sequence. The output shaft of the first air cylinder sequentially penetrates through the third lifting frame and the second lifting frame. The output shaft of the second air cylinder penetrates through the third lifting frame.
[0012] Compared with the prior art, the beneficial effects of the present utility model are as follows:
[0013] (1) By means of the lifting linkage mechanism, each piece source can be lifted out of the deposition groove during the deposition process in the present utility model, which not only eliminates the influence of the deposition groove on the thickness of the deposited film at the edge position of the piece source, but also facilitates the operation of the operator to pick up the piece, thereby improving the uniformity of the film thickness, reducing problems such as scratching and contamination of the piece source, and improving the product yield.
[0014] (2) The lifting linkage mechanism of the present utility model includes a first lifting mechanism, a second lifting mechanism, and a third lifting mechanism. The three lifting mechanisms work independently and respectively control the lifting of the piece sources in the deposition grooves of the central groove group, the middle groove group, and the outer groove group on the wafer stage, improving the overall uniformity of the CVD film. Description of the Drawings
[0015] Other features, objects, and advantages of this invention will become more apparent from the following detailed description of non-limiting embodiments with reference to the accompanying drawings.
[0016] Figure 1 This is a schematic diagram of the deposition stage structure in existing CVD equipment.
[0017] Figure 2 This is a schematic diagram of the deposition stage structure of the CVD equipment of this utility model;
[0018] Figure 3 This utility model Figure 2 Enlarged structural diagram at point A in the middle;
[0019] Figure 4 This is a schematic cross-sectional view of the deposition stage of the CVD equipment of this utility model;
[0020] Figure 5 This utility model Figure 4 Enlarged structural diagram at point B;
[0021] In the diagram: 1. Film source, 2. Film stage, 3. Heating unit, 4. Deposition groove, 401. Central groove group, 402. Middle groove group, 403. Outer groove group, 5. Reaction chamber, 6. Air extraction port, 7. Top cover, 8. Air inlet, 9. Notch, 10. Ejector pin hole, 11. Ejector pin, 12. Support plate, 13. First cylinder, 14. First lifting frame, 15. Second cylinder, 16. Second lifting frame, 17. Third cylinder, 18. Third lifting frame, 19. Support column. Detailed Implementation
[0022] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.
[0023] In the description of this utility model, it should be understood that the terms "middle", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.
[0024] In the present utility model, unless otherwise clearly specified and defined, terms such as "arranged", "installed", "connected", "linked", "fixed", etc. shall be understood in a broad sense. For example, it can be a fixed connection or a detachable connection; it can be a mechanical connection; it can be directly connected or indirectly connected through an intermediate medium. For those of ordinary skill in the art, the specific meanings of the above terms in the present utility model can be understood according to specific circumstances.
[0025] As Figure 2 and Figure 4 、 Figure 5 shown, a deposition carrier structure of a CVD device includes a wafer stage 2 and a heating unit 3. The wafer stage is installed inside the reaction chamber, and the wafer stage is arranged above the heating unit. The heating unit is prior art and will not be elaborated here. The bottom of the heating unit is connected to the bottom wall of the reaction chamber through a support column 19. An air extraction port 6 is also provided at the bottom of the reaction chamber. Multiple deposition grooves 4 are provided on the wafer stage. A thimble hole 10 is opened at the bottom of each deposition groove, and the thimble hole extends downward through the heating unit. A thimble 11 is slidably connected in the thimble hole. The lower end of the thimble is connected to a lifting linkage mechanism for driving it to move up and down along the thimble hole. The lifting linkage mechanism can eject the wafer source in each deposition groove, eliminate the influence of the deposition groove on the edge position of the CVD film, and improve the uniformity of the film. When the wafer source is outside the deposition groove, the operator can directly suck the back of the wafer source with a suction pen to perform the unloading operation, avoiding scratching of the wafer stage, effectively improving surface scratches, contamination, etc. of the wafer source, and improving the product yield. Combining Figure 3 shown, the number of thimble holes in each deposition groove is three. The three thimble holes are distributed in a "pin" shape, and the bottom ends of the thimbles inside them are commonly connected to a support plate 12. The support plate is connected to the lifting linkage mechanism.
[0026] As Figure 2 shown, the multiple deposition grooves are divided into three groups. The three groups of deposition grooves are distributed in a concentric circle manner with the center of the wafer stage as the center of the circle. From the inside to the outside, they are the central groove group 401, the middle groove group 402, and the outer groove group 403. In this embodiment, the number of grooves in the central groove group is 1, and it is located at the center of the wafer stage. The number of grooves in the middle groove group is 6 and they are distributed in a circumferential array. The number of grooves in the outer groove group is 12 and they are distributed in a circumferential array. The reaction conditions of the wafer sources in each group of deposition grooves during the deposition reaction are the same. In order to ensure that the deposition reaction conditions of the wafer sources in different groups of grooves tend to be the same, the thimbles in each group of deposition grooves are controlled by three independent lifting mechanisms respectively. The specific adjustment height of each group can be freely adjusted in combination with the process temperature and the film thickness requirements. Combining Figure 4 and Figure 5As shown, the lifting linkage mechanism includes a first lifting mechanism for controlling the lifting of the ejector pins inside each groove of the central groove group, a second lifting mechanism for controlling the lifting of the ejector pins inside each groove of the intermediate groove group, and a third lifting mechanism for controlling the lifting of the ejector pins inside each groove of the outer groove group. The first lifting mechanism includes a first cylinder 13 and a first lifting frame 14, with the first cylinder connected to the first lifting frame. The second lifting mechanism includes a second cylinder 15 and a second lifting frame 16, with the second cylinder connected to the second lifting frame. The third lifting mechanism includes a third cylinder 17 and a third lifting frame 18, with the third cylinder connected to the third lifting frame. The vertical cross-sections of the first, second, and third lifting frames are all U-shaped structures and are distributed sequentially from top to bottom. The output shaft of the first cylinder passes through the third and second lifting frames sequentially and can move freely up and down along the corresponding through holes. The output shaft of the second cylinder passes through the third lifting frame and can move freely up and down along the corresponding through holes.
[0027] The deposition process of existing CVD equipment is as follows: loading the wafer (placing the wafer in the deposition groove), vacuuming (vacuuming through the evacuation port at the bottom of the reaction chamber), heating (heating unit), deposition (CVD film deposition), degassing (introducing nitrogen into the reaction chamber to restore the pressure to atmospheric pressure), and unloading the wafer (removing the wafer from the deposition groove). The deposition process of the CVD equipment using this invention is as follows: loading the wafer, vacuuming, heating, raising the ejector pin (the height can be freely set according to actual needs), deposition, degassing, unloading the wafer, and lowering the ejector pin.
[0028] The working principle of this utility model is as follows:
[0029] like Figures 2 to 5 As shown, the first cylinder 13, the second cylinder 14, and the third cylinder 15 operate independently, respectively controlling the lifting and lowering of the wafer source 1 within each deposition groove 4 of the central groove group 401, the intermediate groove group 402, and the outer groove group 403. The lifting height of each cylinder can be freely set according to actual needs (under normal circumstances, the stage temperature is 300℃, and the wafer source only needs to be raised by 0.5-1mm during deposition to ensure that the temperature can reach 200-250℃ to meet process requirements). Before the deposition reaction, the wafer source 1 is lifted to detach it from the deposition groove 4, meaning the height of the wafer source is not lower than the deposition groove, reducing the edge shading effect and thus obtaining a film layer with better uniformity, thereby eliminating the influence of the deposition groove 4 on the edge position of the CVD film. When picking up the wafer, the height of the wafer source can be raised again as needed, making it convenient for operators to directly pick up the back side of the wafer source using a suction pen, making the operation simple and convenient.
[0030] The foregoing has shown and described the basic principles, main features, and advantages of this utility model. It will be apparent to those skilled in the art that this utility model is not limited to the details of the exemplary embodiments described above, and that it can be implemented in other specific forms without departing from the spirit or basic characteristics of this utility model. Therefore, the embodiments should be considered exemplary and non-limiting in all respects. The scope of this utility model is defined by the appended claims rather than the foregoing description, and thus all changes falling within the meaning and scope of equivalents of the claims are intended to be included within this utility model.
Claims
1. A deposition stage structure for a CVD (CVD) device, characterized in that: It includes a carrier stage and a heating unit. The carrier stage is provided at the upper end of the heating unit. There are a plurality of deposition grooves on the carrier stage. A thimble hole is opened at the bottom of each deposition groove. The thimble hole extends downward through the heating unit. A thimble is slidably connected in the thimble hole. The lower end of the thimble is connected with a lifting linkage mechanism for driving it to move up and down along the thimble hole.
2. The deposition stage structure of a CVD equipment as described in claim 1, characterized in that: The number of thimble holes in each deposition groove is three. The three thimble holes are distributed in a "pin" shape, and the bottom ends of the thimbles inside them are commonly connected with a support plate. The support plate is connected with the lifting linkage mechanism.
3. The deposition stage structure of a CVD equipment as described in claim 1, characterized in that: The plurality of deposition grooves are divided into three groups. The three groups of deposition grooves are distributed in a concentric circle manner with the center of the carrier stage as the center of the circle. From the inside to the outside, they are the central groove group, the middle groove group, and the outer groove group in sequence.
4. The deposition stage structure for a CVD device as described in claim 3, characterized in that: The number of grooves in the central groove group is 1, and it is located at the center position of the carrier stage. The number of grooves in the middle groove group is 6 and they are distributed in a circumferential array. The number of grooves in the outer groove group is 12 and they are distributed in a circumferential array.
5. The deposition stage structure of a CVD equipment as described in claim 3, characterized in that: The lifting linkage mechanism includes a first lifting mechanism for controlling the lifting of the thimbles inside each groove of the central groove group, a second lifting mechanism for controlling the lifting of the thimbles inside each groove of the middle groove group, and a third lifting mechanism for controlling the lifting of the thimbles inside each groove of the outer groove group.
6. The deposition stage structure of a CVD equipment as described in claim 5, characterized in that: The first lifting mechanism includes a first air cylinder and a first lifting frame. The first air cylinder is connected with the first lifting frame. The second lifting mechanism includes a second air cylinder and a second lifting frame. The second air cylinder is connected with the second lifting frame. The third lifting mechanism includes a third air cylinder and a third lifting frame. The third air cylinder is connected with the third lifting frame.
7. A deposition stage structure for a CVD equipment as described in claim 6, characterized in that: The vertical cross-sections of the first lifting frame, the second lifting frame, and the third lifting frame are all U-shaped structures and are distributed in sequence from top to bottom. The output shaft of the first air cylinder sequentially penetrates through the third lifting frame and the second lifting frame. The output shaft of the second air cylinder penetrates through the third lifting frame.