IGBT (Insulated Gate Bipolar Translator) driving and protecting device based on 1ED020I12

Abstract

The utility model aims to provide the IGBT driving and protecting device based on the 1ED020I12, which has the advantages of low cost, simple circuit, safety, reliability and high efficiency. The driving signal push-pull output module is connected with an IGBT module, sends a driving signal to the IGBT module and controls the IGBT module to work, and the IGBT overcurrent protection module is connected with the driving signal push-pull output module, receives a control signal of the driving signal push-pull output module and provides overcurrent protection for the IGBT module. One end of the IGBT over-voltage protection module is connected with the IGBT module and carries out over-voltage value setting, the other end of the IGBT over-voltage protection module is connected with the driving signal push-pull output module and carries out over-voltage protection on the IGBT module, and the auxiliary power supply provides electric energy for the driving signal push-pull output module, the IGBT over-current protection module and the IGBT over-voltage protection module. The IGBT driving protection circuit can be applied to the field of IGBT driving protection.

Description

Technical Field

[0001] This utility model relates to the field of IGBT drive protection, and in particular to an IGBT drive and protection device based on 1ED020I12. Background Technology

[0002] Insulated-gate bipolar transistors (IGBTs) are key components in modern power electronics, widely used in equipment such as frequency converters, UPS power supplies, and high-frequency welding machines. IGBTs combine the high input impedance of MOSFETs with the low saturation voltage characteristics of bipolar transistors, enabling them to handle large currents at high frequencies.

[0003] However, IGBTs may encounter short circuits or overcurrents in practical applications. These situations can cause a rapid rise in device temperature, which, if not controlled, may lead to permanent damage. Short circuit protection typically refers to protection achieved by detecting a rapid rise in Vce when an IGBT experiences a short circuit. Overcurrent protection, on the other hand, involves using a current sensor to sense the absolute value of the current when it exceeds the normal operating level but does not reach the level required for a short circuit, thereby providing protection.

[0004] Therefore, overcurrent protection is a crucial measure to ensure the safe operation of IGBTs. Commercially available IGBT overcurrent protection typically uses a diode added to the desaturation pin of the driver chip. However, the threshold for this Uce voltage detection is usually quite high, and the protection only activates when a severe overcurrent fault occurs in the IGBT. In such cases, the IGBT's overcurrent tolerance is already limited, requiring the IGBT driver to quickly protect the IGBT; otherwise, IGBT damage may occur.

[0005] When the IGBT is turned off, a very high surge voltage spike will be generated across the collector-emitter terminals of the IGBT due to the stray inductance and load inductance in the circuit. This voltage spike may cause the IGBT to break down, so measures need to be taken to suppress this overvoltage.

[0006] Overvoltage protection is just as important as overcurrent protection, but current technology generally achieves this through:

[0007] 1. Optimize circuit design to reduce stray inductance, such as by using layered wiring and shortening connection lines;

[0008] 2. Use absorption circuits, such as RC snubber circuits or RCD snubber circuits, to absorb the energy released in the inductor and reduce turn-off overvoltage;

[0009] 3. Increase the gate resistance Rg to slow down the switching speed of the IGBT and reduce switching overvoltage spikes.

[0010] However, even with these measures, IGBTs can still experience overvoltage, especially when using snubber circuits, which are not ideal in practice. Utility Model Content

[0011] The technical problem to be solved by this utility model is to overcome the shortcomings of the prior art and provide a low-cost, simple, safe, reliable and efficient IGBT drive and protection device based on 1ED020I12.

[0012] The technical solution adopted by this utility model is that this utility model includes

[0013] This push-pull output module connects to the IGBT module, sends drive signals to the IGBT module, and controls the operation of the IGBT module.

[0014] Connected to the drive signal push-pull output module, this IGBT overcurrent protection module receives control signals from the drive signal push-pull output module and provides overcurrent protection for the IGBT module.

[0015] An IGBT overvoltage protection module is configured such that one end is connected to the IGBT module for setting the overvoltage value, and the other end is connected to the drive signal push-pull output module for overvoltage protection of the IGBT module.

[0016] The system also includes an auxiliary power supply, which provides power to the drive signal push-pull output module, the IGBT overcurrent protection module, and the IGBT overvoltage protection module. The auxiliary power supply provides voltages of -9V, +5V, and +15V.

[0017] The drive signal push-pull output module includes a drive control module, a current push-pull amplifier circuit, and a drive resistor. The drive control module includes a drive chip and four bootstrap capacitors connected to the signal drive voltage terminal of the drive chip. The signal drive voltage terminal is connected to the auxiliary power supply. The drive chip has built-in signal isolation function. The non-inverting input terminal of the drive chip directly inputs a PWM signal for control. The fault signal output terminal of the drive chip is connected to the auxiliary power supply via the ninth pull-up resistor. The first power input terminal of the drive chip is connected to the thirty-third filter capacitor and is powered by the auxiliary power supply. The drive signal output terminal of the drive chip is connected to the output terminal of the current push-pull amplifier circuit via the drive resistor.

[0018] The driver chip is model number 1ED020I12.

[0019] The current push-pull amplifier circuit includes an NPN transistor and a PNP transistor. The collector of the NPN transistor is connected to the auxiliary power supply. The emitter of the NPN transistor is connected to the gate via a gate on-resistor and outputs to the gate of the IGBT module. A gate off-resistor is connected in series with the emitter of the PNP transistor. The base of the PNP transistor is connected to the base of the NPN transistor and then connected to the drive signal output terminal of the drive chip through the drive resistor.

[0020] The IGBT overcurrent protection module includes a Vce detection circuit, a reference voltage module, and a comparator output module. The Vce detection circuit is connected to the collector of the IGBT module to detect the saturation voltage drop when the IGBT module is turned on and to provide reverse connection protection for the IGBT module. The Vce detection circuit detects the voltage value of the IGBT module and outputs it to the comparator output module. The reference voltage module outputs the required voltage to the comparator output module. The output terminal of the comparator output module is connected to the drive signal push-pull output module.

[0021] The Vce detection circuit includes a first TVS diode, a second TVS diode, a third TVS diode, a fourth TVS diode, a fifth TVS diode, and a twenty-first pull-up resistor connected in sequence. The cathode of the first TVS diode is connected to the collector of the IGBT module, the anode of the fifth TVS diode is connected to the non-inverting input of the comparator output module, one end of the twenty-first pull-up resistor is connected to the anode of the fifth TVS diode, and the other end is connected to the auxiliary power supply. The twenty-first pull-up resistor causes a forward voltage drop among the first TVS diode, the second TVS diode, the third TVS diode, the fourth TVS diode, and the fifth TVS diode.

[0022] The reference voltage module includes a reference voltage chip, a current-limiting resistor, a first voltage-dividing resistor, a second voltage-dividing resistor, a fortieth filter capacitor, and a forty-first filter capacitor. One end of the current-limiting resistor is connected to the auxiliary power supply, and the other end is connected in series to pin 1 of the reference voltage chip. One end of the first voltage-dividing resistor is connected to pin 1 of the reference voltage chip, and the other end is connected in series with the second voltage-dividing resistor and then connected to pin 2 of the reference voltage chip. The other end of the second voltage-dividing resistor is connected to pin 3 of the reference voltage chip and then connected to the output ground. The fortieth filter capacitor and the forty-first filter capacitor are connected in parallel between pins 1 and 3 of the reference voltage chip.

[0023] The comparator output module includes a comparator chip, a bidirectional TVS diode, and a blanking circuit consisting of a blanking resistor and a blanking capacitor. The inverting input terminal of the comparator chip is connected to the output terminal of the reference voltage module, and the non-inverting input terminal is connected to the output terminal of the Vce detection circuit. The bidirectional TVS diode is connected in parallel to the non-inverting input terminal and the output ground of the comparator chip. One end of the blanking resistor is connected to the desaturation pin of the drive signal push-pull output module, and the other end is connected in series with the blanking capacitor and connected to the output terminal of the comparator chip. The other end of the blanking capacitor is connected to the output ground.

[0024] The IGBT overvoltage protection module includes a thirteenth TVS diode, a fourteenth TVS diode, a fifteenth TVS diode, a sixteenth TVS diode, a seventeenth TVS diode, a twenty-first TVS diode, a twenty-second TVS diode, a Schottky diode, an eighteenth blocking diode, a nineteenth blocking diode, and a bleed resistor. The thirteenth, fourteenth, fifteenth, sixteenth, and seventeenth TVS diodes are connected sequentially. The cathode of the thirteenth TVS diode is connected to the collector of the IGBT module. The anodes of the eighteenth and nineteenth blocking diodes are connected to... The anode of the seventeenth TVS diode is connected, the cathode of the eighteenth blocking diode is connected to the drive signal push-pull output module, the nineteenth blocking diode is connected to the gate of the IGBT module, the cathode of the Schottky diode is connected to the auxiliary power supply, and the anode is connected to the gate of the IGBT module. The bleeder resistor is connected in parallel between the gate and emitter of the IGBT module. The anodes of the twenty-first and twenty-second TVS diodes are connected, and the cathodes of the twenty-first and twenty-second TVS diodes are connected in parallel between the gate and emitter of the IGBT module. A shorting resistor is also connected between the base and collector of the NPN transistor.

[0025] The beneficial effects of this invention are as follows: In this invention, the output of the comparator chip in the overcurrent protection circuit is connected to the desaturation pin of the driver chip; one end of the Vce detection circuit is connected to the collector of the IGBT through multiple TVS diodes, and the other end is connected to the non-inverting input of the comparator chip; the reference voltage circuit is implemented through a reference power supply chip and connected to the inverting input of the comparator chip. This design can effectively and promptly protect the IGBT in the event of a short circuit fault, exhibits good consistency in driving the IGBT half-bridge module, and allows for flexible adjustment of the overcurrent value according to specific IGBT parameters, making it suitable for a wide range of applications. This invention features a simple circuit structure that facilitates production and subsequent maintenance and debugging. The components are inexpensive, and it can drive high-power IGBT modules, making it widely applicable in industrial settings. This invention is adaptable to different IGBT models; the overcurrent value can be adjusted by modifying the values ​​of the first and second voltage divider resistors based on the IGBT module's Vce data, offering high flexibility and reliability. Furthermore, it adds an extra layer of protection to the existing IGBT protection circuit, utilizing the rapid monitoring and protection features of the logic chip to quickly monitor and protect against IGBT overcurrent and short-circuit faults. For different operating voltage environments, overvoltage adjustment can be achieved simply by replacing the TVS diode. Therefore, this invention is low-cost, simple in circuitry, safe, reliable, and highly efficient. Attached Figure Description

[0026] Figure 1 This is a simplified flowchart of the present invention.

[0027] Figure 2 This is a simplified circuit diagram of the drive control module.

[0028] Figure 3 This is a simplified circuit diagram of the IGBT overcurrent protection module.

[0029] Figure 4 This is a simplified circuit diagram of the IGBT overvoltage protection module.

[0030] Figure 5 This is a simplified circuit diagram of the reference voltage module. Detailed Implementation

[0031] like Figures 1-5 As shown, this utility model includes:

[0032] The push-pull output module 2 is connected to IGBT module 1, and sends drive signals to IGBT module 1 and controls the operation of IGBT module 1.

[0033] Connected to the drive signal push-pull output module 2, and receiving control signals from the drive signal push-pull output module 2, the IGBT overcurrent protection module 3 provides overcurrent protection for the IGBT module 1.

[0034] An IGBT overvoltage protection module 4 is configured such that one end is connected to IGBT module 1 for setting the overvoltage value, and the other end is connected to the drive signal push-pull output module 2 for overvoltage protection of IGBT module 1.

[0035] And an auxiliary power supply 5, which provides power to the drive signal push-pull output module 2, the IGBT overcurrent protection module 3, and the IGBT overvoltage protection module 4. The auxiliary power supply 5 provides voltages of -9V, +5V, and +15V.

[0036] The drive signal push-pull output module is connected to the gate of the IGBT module to control the operation of the IGBT module. One end of the overvoltage protection module is connected to the collector of the IGBT module to set the overvoltage value, and the other end is connected to the base of the NPN transistor Q4 in the push-pull output module to provide overvoltage protection. The overcurrent protection module provides overcurrent protection and overcurrent value setting for the comparator output module through the Vce detection circuit and the reference voltage module.

[0037] The drive signal push-pull output module 2 includes a drive control module, a current push-pull amplifier circuit, and a drive resistor R26. The drive control module includes a drive chip U1 and four bootstrap capacitors C34, C35, C36, and C37 respectively connected to the signal drive voltage terminals VCC2 and VEE2 of the drive chip U1. The model of the drive chip U1 is 1ED020I12. The signal drive voltage terminals VCC2 and VEE2 are connected to the auxiliary power supply 5. The driver chip U1 has a built-in signal isolation function. The non-inverting input terminal IN+ of the driver chip U1 directly inputs the PWM signal for control. The fault signal output terminal FLT of the driver chip U1 is connected to the auxiliary power supply 5 through the ninth pull-up resistor R9. When an overcurrent occurs, it outputs a high level. At the same time, the drive signal output terminal IN- of the driver chip U1 is forcibly pulled low for protection. The first power input terminal VCC1 of the driver chip U1 is connected to the thirty-third filter capacitor C33 and is powered by the auxiliary power supply 5. The drive signal output terminal IN- of the driver chip U1 is connected to the output terminal OUT of the current push-pull amplifier circuit through the drive resistor R26.

[0038] The current push-pull amplifier circuit includes an NPN transistor Q4 and a PNP transistor Q5. The collector of the NPN transistor Q4 is connected to the auxiliary power supply 5. The emitter of the NPN transistor Q4 is connected to the gate on-resistor R28 and outputs to the gate G1 of the IGBT module 1. A gate off-resistor R29 is connected in series with the emitter of the PNP transistor Q5. The base of the PNP transistor Q5 is connected to the base of the NPN transistor Q4 and then connected to the drive signal output terminal IN- of the drive chip U1 through the drive resistor R26.

[0039] The IGBT overcurrent protection module 3 includes a Vce detection circuit, a reference voltage module, and a comparator output module. The Vce detection circuit is connected to the collector C1 of the IGBT module 1 to detect the saturation voltage drop when the IGBT module 1 is turned on, and pushes and pulls the drive signal for the IGBT module 11 to output to the module 2.

[0040] Connected to the drive signal push-pull output module 2, and receiving control signals from the drive signal push-pull output module 2, the IGBT overcurrent protection module 3 provides overcurrent protection for the IGBT module 1.

[0041] An IGBT overvoltage protection module 4 is configured such that one end is connected to IGBT module 1 for setting the overvoltage value, and the other end is connected to the drive signal push-pull output module 2 for overvoltage protection of IGBT module 1.

[0042] And an auxiliary power supply 5, which provides power to the drive signal push-pull output module 2, the IGBT overcurrent protection module 3, and the IGBT overvoltage protection module 4. The auxiliary power supply 5 provides voltages of -9V, +5V, and +15V.

[0043] The drive signal push-pull output module is connected to the gate of the IGBT module to control the operation of the IGBT module. One end of the overvoltage protection module is connected to the collector of the IGBT module to set the overvoltage value, and the other end is connected to the base of the NPN transistor Q4 in the push-pull output module to provide overvoltage protection. The overcurrent protection module provides overcurrent protection and overcurrent value setting for the comparator output module through the Vce detection circuit and the reference voltage module.

[0044] The drive signal push-pull output module 2 includes a drive control module, a current push-pull amplifier circuit, and a drive resistor R26. The drive control module includes a drive chip U1 and four bootstrap capacitors C34, C35, C36, and C37 respectively connected to the signal drive voltage terminals VCC2 and VEE2 of the drive chip U1. The model of the drive chip U1 is 1ED020I12. The signal drive voltage terminals VCC2 and VEE2 are connected to the auxiliary power supply 5. The driver chip U1 has a built-in signal isolation function. The non-inverting input terminal IN+ of the driver chip U1 directly inputs the PWM signal for control. The fault signal output terminal FLT of the driver chip U1 is connected to the auxiliary power supply 5 through the ninth pull-up resistor R9. When an overcurrent occurs, it outputs a high level. At the same time, the drive signal output terminal IN- of the driver chip U1 is forcibly pulled low for protection. The first power input terminal VCC1 of the driver chip U1 is connected to the thirty-third filter capacitor C33 and is powered by the auxiliary power supply 5. The drive signal output terminal IN- of the driver chip U1 is connected to the output terminal OUT of the current push-pull amplifier circuit through the drive resistor R26.

[0045] The current push-pull amplifier circuit includes an NPN transistor Q4 and a PNP transistor Q5. The collector of the NPN transistor Q4 is connected to the auxiliary power supply 5. The emitter of the NPN transistor Q4 is connected to the gate on-resistor R28 and outputs to the gate G1 of the IGBT module 1. A gate off-resistor R29 is connected in series with the emitter of the PNP transistor Q5. The base of the PNP transistor Q5 is connected to the base of the NPN transistor Q4 and then connected to the drive signal output terminal IN- of the drive chip U1 through the drive resistor R26.

[0046] The IGBT overcurrent protection module 3 includes a Vce detection circuit, a reference voltage module, and a comparator output module. The Vce detection circuit is connected to the collector C1 of the IGBT module 1 to detect the saturation voltage drop when the IGBT module 1 is turned on, and the other end of the IGBT module 1 is connected to the output ground GND2 of the driver chip. During normal operation, the VCE voltage of the IGBT module is low. The constant current source inside the driver chip of the drive control module charges the blanking capacitor through a resistor to keep its voltage within a safe range.

[0047] The IGBT overvoltage protection module 4 includes a thirteenth TVS diode D13, a fourteenth TVS diode D14, a fifteenth TVS diode D15, a sixteenth TVS diode D16, a seventeenth TVS diode D17, a twenty-first TVS diode D21, a twenty-second TVS diode D22, a Schottky diode D20, an eighteenth blocking diode D18, a nineteenth blocking diode D19, and a bleeder resistor RGE0. The thirteenth TVS diode D13, the fourteenth TVS diode D14, the fifteenth TVS diode D15, the sixteenth TVS diode D16, and the seventeenth TVS diode D17 are connected sequentially. The cathode of the thirteenth TVS diode D13 is connected to the collector C1 of the IGBT module 1. The eighteenth blocking diode... The anodes of diodes D18 and D19 are connected to the anode of TVS diode D17. The cathode of D18 is connected to the drive signal push-pull output module 2. D19 is connected to the gate G1 of IGBT module 1. The cathode of Schottky diode D20 is connected to auxiliary power supply 5, and its anode is connected to the gate G1 of IGBT module 1. The bleeder resistor RGE0 is connected in parallel between the gate G1 and emitter C2 of IGBT module 1. The anodes of TVS diodes D21 and D22 are connected, and the cathodes of TVS diodes D21 and D22 are connected in parallel between the gate G1 and emitter C2 of IGBT module 1. Here, Schottky diode D20 uses a Schottky diode with low reverse current. When an overvoltage value is reached, it is connected to the base of NPN transistor Q4 in the push-pull amplifier through two blocking diodes, causing its IGBT to conduct and bleed the voltage. A shorting resistor RS2 is also connected between the base and collector of the NPN transistor Q4. The shorting resistor RS2 is used to increase the driving capability of the NPN transistor Q4, thereby reducing the line resistance and increasing the line current.

[0048] In this invention, the IGBT overcurrent protection module uses multiple TVS diodes connected in series. The sum of the series-connected cutoff voltages of the TVS diodes should be 1.8 to 2.5 times the bus voltage. The protection value of the saturation voltage drop VCE of the IGBT module and its relationship curve with the conduction current under different test conditions are examined. The on-state voltage drop of the series-connected TVS diodes is calculated and added to the saturation voltage drop of the IGBT module under the required overcurrent value. This is input to the comparator output module, and the voltage divider resistor value of the reference voltage module is modified so that the output voltage of this module is the final calculated value in the IGBT module relationship curve. The comparator chip compares whether the collector saturation voltage drop exceeds the set threshold. When the IGBT collector saturation voltage drop reaches the set voltage value, the comparator output module outputs a high level to drive the chip to desaturate and protect it. The IGBT overvoltage protection module uses multiple TVS diodes connected in series. The sum of the series-connected cutoff voltages of the TVS diodes should be approximately 0.9 times the overvoltage protection value. The bus voltage value should not exceed the overvoltage protection value, and should be at most 0.7 times the overvoltage protection value.

[0049] This invention aims to address the shortcomings of existing technologies by proposing an IGBT driving and protection device based on the 1ED020I12. This device considers the diverse parameters of IGBT modules, adapting to different IGBT models and enabling flexible adjustment. While driving different types of IGBTs, this invention utilizes commercially available, low-cost electronic components that do not affect functionality, and achieves precise control of the IGBT module. Furthermore, this device integrates multiple protection mechanisms, including but not limited to overcurrent protection, short-circuit protection, and overvoltage protection, thereby significantly improving the reliability and safety of the IGBT.

[0050] Finally, it should be emphasized that the above description is only a preferred embodiment of the present utility model and is not intended to limit the present utility model. For those skilled in the art, the present utility model can have various changes and modifications. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. An IGBT drive and protection device based on 1ED020I12, characterized in that, The device includes A push-pull output module (2) for drive signals connected to the IGBT module (1), sending drive signals to the IGBT module (1) and controlling the operation of the IGBT module (1). Connected to the drive signal push-pull output module (2), receiving the control signal from the drive signal push-pull output module (2), and providing overcurrent protection for the IGBT module (1) IGBT overcurrent protection module (3). An IGBT overvoltage protection module (4) is connected to the IGBT module (1) at one end and sets the overvoltage value, and connected to the drive signal push-pull output module (2) at the other end and provides overvoltage protection for the IGBT module (1). And an auxiliary power supply (5), which provides power to the drive signal push-pull output module (2), the IGBT overcurrent protection module (3) and the IGBT overvoltage protection module (4).

2. The IGBT driving and protection device based on 1ED020I12 according to claim 1, characterized in that, The drive signal push-pull output module (2) includes a drive control module, a current push-pull amplifier circuit, and a drive resistor (R26). The drive control module includes a drive chip (U1) and four bootstrap capacitors (C34, C35, C36, C37) respectively connected to the signal drive voltage terminals (VCC2, VEE2) of the drive chip (U1). The signal drive voltage terminals (VCC2, VEE2) are connected to the auxiliary power supply (5). The drive chip (U1) has built-in signal isolation function. The non-inverting input terminal (IN+) of the drive signal is directly input with a PWM signal for control. The fault signal output terminal (FLT) of the drive chip (U1) is connected to the ninth pull-up resistor (R9) and the auxiliary power supply (5). The first power input terminal (VCC1) of the drive chip (U1) is connected to the thirty-third filter capacitor (C33) and is powered by the auxiliary power supply (5). The drive signal output terminal (IN-) of the drive chip (U1) is connected to the output terminal (OUT) of the current push-pull amplifier circuit through the drive resistor (R26).

3. The IGBT driving and protection device based on 1ED020I12 according to claim 2, characterized in that, The driver chip (U1) is model number 1ED020I12.

4. The IGBT driving and protection device based on 1ED020I12 according to claim 2, characterized in that, The current push-pull amplifier circuit includes an NPN transistor (Q4) and a PNP transistor (Q5). The collector of the NPN transistor (Q4) is connected to the auxiliary power supply (5). The emitter of the NPN transistor (Q4) is connected to the gate on-resistor (R28) and outputs to the gate (G1) of the IGBT module (1). A gate off-resistor (R29) is connected in series with the emitter of the PNP transistor (Q5). The base of the PNP transistor (Q5) is connected to the base of the NPN transistor (Q4) and then connected to the drive signal output terminal (IN-) of the drive chip (U1) through the drive resistor (R26).

5. The IGBT driving and protection device based on 1ED020I12 according to claim 1, characterized in that, The IGBT overcurrent protection module (3) includes a Vce detection circuit, a reference voltage module and a comparator output module. The Vce detection circuit is connected to the collector (C1) of the IGBT module (1) to detect the saturation voltage drop when the IGBT module (1) is turned on and to protect the IGBT module (1) from reverse connection. The Vce detection circuit detects the voltage value of the IGBT module (1) and outputs it to the comparator output module. The reference voltage module outputs the required voltage to the comparator output module. The output terminal of the comparator output module is connected to the drive signal push-pull output module (2).

6. The IGBT driving and protection device based on 1ED020I12 according to claim 5, characterized in that, The Vce detection circuit includes a first TVS diode (D1), a second TVS diode (D2), a third TVS diode (D3), a fourth TVS diode (D4), a fifth TVS diode (D5), and a twenty-first pull-up resistor (R21) connected in sequence. The cathode of the first TVS diode (D1) is connected to the collector (C1) of the IGBT module (1). The anode of the fifth TVS diode (D5) is connected to the non-inverting input terminal of the comparator output module. One end of the twenty-first pull-up resistor (R21) is connected to the anode of the fifth TVS diode (D5), and the other end is connected to the auxiliary power supply (5). The twenty-first pull-up resistor (R21) causes the first TVS diode (D1), the second TVS diode (D2), the third TVS diode (D3), the fourth TVS diode (D4), and the fifth TVS diode (D5) to generate a forward voltage drop.

7. The IGBT driving and protection device based on 1ED020I12 according to claim 5, characterized in that, The reference voltage module includes a reference voltage chip (U5), a current-limiting resistor (R14), a first voltage divider resistor (R15), a second voltage divider resistor (R16), a 40th filter capacitor (C40), and a 41st filter capacitor (C41). One end of the current-limiting resistor (R14) is connected to the auxiliary power supply (5), and the other end is connected in series to pin 1 of the reference voltage chip (U5). One end of the first voltage divider resistor (R15) is connected to pin 1 of the reference voltage chip (U5), and the other end is connected in series with the second voltage divider resistor (R16) and then connected to pin 2 of the reference voltage chip (U5). The other end of the second voltage divider resistor (R16) is connected to pin 3 of the reference voltage chip (U5) and connected to the output ground (GND2). The 40th filter capacitor (C40) and the 41st filter capacitor (C41) are connected in parallel between pins 1 and 3 of the reference voltage chip (U5).

8. The IGBT driving and protection device based on 1ED020I12 according to claim 5, characterized in that, The comparator output module includes a comparator chip (U3), a bidirectional TVS diode (D6), and a blanking circuit consisting of a blanking resistor (R20) and a blanking capacitor (C44). The inverting input terminal of the comparator chip (U3) is connected to the output terminal of the reference voltage module, and the non-inverting input terminal is connected to the output terminal of the Vce detection circuit. The bidirectional TVS diode (D6) is connected in parallel to the non-inverting input terminal of the comparator chip (U3) and the output ground (GND2). One end of the blanking resistor (R20) is connected to the desaturation pin (DESAT) of the drive signal push-pull output module (2), and the other end is connected in series with the blanking capacitor (C44) and connected to the output terminal of the comparator chip (U3). The other end of the blanking capacitor (C44) is connected to the output ground (GND2).

9. The IGBT driving and protection device based on 1ED020I12 according to claim 4, characterized in that, The IGBT overvoltage protection module (4) includes a thirteenth TVS diode (D13), a fourteenth TVS diode (D14), a fifteenth TVS diode (D15), a sixteenth TVS diode (D16), a seventeenth TVS diode (D17), a twenty-first TVS diode (D21), a twenty-second TVS diode (D22), a Schottky diode (D20), an eighteenth blocking diode (D18), a nineteenth blocking diode (D19), and a bleeder resistor (RGE0). The thirteenth TVS diode (D13), the fourteenth TVS diode (D14), the fifteenth TVS diode (D15), the sixteenth TVS diode (D16), and the seventeenth TVS diode (D17) are connected in sequence. The cathode of the thirteenth TVS diode (D13) is connected to the collector (C1) of the IGBT module (1). The eighteenth blocking diode (D18) and the nineteenth blocking diode (D19) are connected to the collector (C1) of the IGBT module (1). The anode of the 17th TVS diode (D17) is connected to the anode of the 18th blocking diode (D18), the cathode of the 19th blocking diode (D19) is connected to the gate (G1) of the IGBT module (1), the cathode of the Schottky diode (D20) is connected to the auxiliary power supply (5), and the anode is connected to the gate (G1) of the IGBT module (1). The discharge resistor (RGE0) is connected in parallel between the gate (G1) and the emitter (C2) of the IGBT module (1). The anodes of the 21st TVS diode (D21) and the 22nd TVS diode (D22) are connected, and the cathodes of the 21st TVS diode (D21) and the 22nd TVS diode (D22) are connected in parallel between the gate (G1) and the emitter (C2) of the IGBT module (1). A short-circuit resistor (RS2) is also connected between the base and the collector of the NPN transistor (Q4).

10. The IGBT driving and protection device based on 1ED020I12 according to claim 1, characterized in that, The auxiliary power supply (5) provides voltages of -9V, +5V and +15V.

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