Plasma chamber, cavity module and semiconductor equipment

Abstract

The embodiment of the utility model provides a plasma chamber, a cavity module and semiconductor equipment, and relates to the field of semiconductor equipment. The first component comprises a first joint face and a first protrusion arranged on the first joint face in a protruding mode, the first joint face is arranged on the side, facing the second component, of the first component, and the first joint face surrounds the hollow cavity. The second component comprises a second joint surface and a first recess concavely formed in the second joint surface, the second joint surface is arranged on one side, facing the first component, of the second component, the second joint surface is arranged around the hollow cavity, the first joint surface and the second joint surface are oppositely arranged and hermetically connected together, and the first bulge is accommodated in the first recess; the outer wall of the first protrusion is attached to the inner wall of the first recess to increase the joint area between the first component and the second component, so that the gas leakage path of the plasma chamber is increased, and the gas tightness of the plasma chamber is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor equipment technology, specifically to a plasma chamber, cavity module, and semiconductor equipment. Background Technology

[0002] Semiconductor equipment is used to manufacture semiconductor devices. Common semiconductor equipment, such as remote plasma sources (RPS), typically includes a cavity module containing a plasma chamber. The plasma chamber is where the plasma reaction occurs and requires extremely high hermeticity. Currently, two identical half-components are usually joined together to form the plasma chamber. The joint is the weakest point in the plasma chamber, and its hermeticity will be affected over time. Utility Model Content

[0003] The purpose of this application is to provide a plasma chamber, cavity module, and semiconductor device that can improve airtightness.

[0004] To achieve the objectives of this application, the following technical solution is provided:

[0005] In a first aspect, one embodiment of this application provides a plasma chamber, which includes a first component and a second component stacked together, forming a hollow cavity for plasma reaction. The first component includes a first mating surface and a first protrusion protruding from the first mating surface. The first mating surface is located on the side of the first component facing the second component and surrounds the hollow cavity. The second component includes a second mating surface and a first recess recessed on the second mating surface. The second mating surface is located on the side of the second component facing the first component and surrounds the hollow cavity. The first mating surface and the second mating surface are opposite to each other and sealed together. The first protrusion is received within the first recess, and the outer wall of the first protrusion is abutted against the inner wall of the first recess.

[0006] In the plasma chamber provided in this application, when the first component and the second component are fastened together, the first mating surface and the second mating surface are arranged opposite to each other and sealed together to form a first airtight structure; the first protrusion is received in the first recess, and the outer wall of the first protrusion is attached to the inner wall of the first recess to form a second airtight structure, which increases the mating area between the first component and the second component, which is beneficial to increasing the gas leakage path between the first component and the second component, and is beneficial to improving the airtightness of the plasma chamber.

[0007] According to the first aspect, in one possible implementation, the first protrusion includes a first outer wall, a second outer wall, and a third outer wall connected in sequence, with the first outer wall and the third outer wall facing each other, and the third outer wall located on the side of the first protrusion closer to the hollow cavity. The first recess includes a first inner wall, a second inner wall, and a third inner wall connected in sequence, with the first inner wall and the third inner wall facing each other, and the third inner wall located on the side of the first recess closer to the hollow cavity; the first inner wall is fitted with the first outer wall, the second inner wall is fitted with the second outer wall, and the third inner wall is fitted with the third outer wall.

[0008] In this possible implementation, since the first protrusion includes a first outer wall, a second outer wall, and a third outer wall connected in sequence, with the first and third outer walls facing each other, the cross-section of the first joint structure formed by the first mating surface and the first protrusion is approximately "U"-shaped. The first recess includes a first inner wall, a second inner wall, and a third inner wall connected in sequence, with the first and third inner walls facing each other, so that the cross-section of the second joint structure formed by the second mating surface and the first recess is approximately "U"-shaped. This allows the first and second components to be fastened together, forming an approximately "U"-shaped maze after the first protrusion and the first recess are fastened together, which helps to further increase the contact area between the first and second components and further increase the gas leakage path.

[0009] According to the first aspect, in one possible implementation, the first component further includes a second protrusion protruding from the first mating surface, and the second component further includes a second recess recessed from the second mating surface, the second protrusion being received within the second recess, and the outer wall of the second protrusion abutting against the inner wall of the second recess.

[0010] In this possible implementation, since a second protrusion is added to the first mating surface and a second recess is added to the second mating surface, the second protrusion is housed in the second recess, and the outer wall of the second protrusion fits against the inner wall of the second recess, which further increases the contact area between the first component and the second component and the gas leakage path, which is beneficial to improving the airtightness of the plasma chamber.

[0011] According to the first aspect, in one possible implementation, the first component further includes a second recess recessed in the first mating surface. The second component further includes a second protrusion protruding from the second mating surface, the second protrusion being received within the second recess, and the outer wall of the second protrusion abutting against the inner wall of the second recess.

[0012] In this possible implementation, since a second protrusion is added to the first mating surface and a second recess is added to the second mating surface, the second protrusion is housed in the second recess, and the outer wall of the second protrusion fits against the inner wall of the second recess, which further increases the contact area between the first component and the second component, increases the gas leakage path, and helps to improve the airtightness of the plasma chamber.

[0013] According to the first aspect, in one possible implementation, the first protrusion is disposed along the circumferential direction of the first mating surface and surrounds the hollow cavity, and the first recess is disposed along the circumferential extension direction of the second mating portion and surrounds the hollow cavity.

[0014] In this possible implementation, the second protrusion and the second recess are arranged around the hollow cavity, and the second protrusion and the second recess form an airtight structure surrounding the hollow cavity, which is beneficial to improving the sealing effect of the plasma chamber.

[0015] According to the first aspect, in one possible implementation, in the stacking direction of the first component and the second component, an adhesive layer is provided between the second mating surface and the first mating surface, the side of the adhesive layer facing the first component is attached to and bonded to the first mating surface, and the side of the adhesive layer facing the second component is attached to and bonded to the second mating surface.

[0016] In this possible implementation, bonding is achieved through an adhesive layer, which improves the connection stability between the first component and the second component.

[0017] According to the first aspect, in one possible implementation, the adhesive layer is located outside the first recess.

[0018] In this possible implementation, since the adhesive layer is located outside the first recess, no adhesive layer is provided between the outer wall of the first protrusion and the inner wall of the first recess. This is beneficial to make the outer wall of the first protrusion and the inner wall of the first recess fit more tightly, further improving the airtightness between the first component and the second component.

[0019] According to the first aspect, in one possible implementation, the first mating surface includes a plane, the second mating surface includes a plane, and the planes of the first mating surface and the planes of the second mating surface are bonded together by an adhesive layer.

[0020] In this possible implementation, the flatness of the adhesive layer is related to the surface structure to which it is attached. Applying the adhesive to the plane helps to improve the flatness of the formed adhesive layer, reduce the generation of voids in the adhesive layer, and further improve the airtightness of the plasma chamber.

[0021] Secondly, one embodiment of this application provides a cavity module, the cavity module including a plasma chamber according to the first aspect.

[0022] Thirdly, according to one embodiment of this application, a semiconductor device is provided, the semiconductor device including a body and a cavity module according to the first aspect. Attached Figure Description

[0023] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0024] Figure 1 This is a perspective view of a semiconductor device provided in one embodiment of this application;

[0025] Figure 2 yes Figure 1 A three-dimensional schematic diagram of the semiconductor device when the cover is removed;

[0026] Figure 3 This is a three-dimensional schematic diagram of the plasma chamber of a semiconductor device provided in one embodiment of this application;

[0027] Figure 4 yes Figure 3 The diagram shows a three-dimensional exploded view of the plasma chamber.

[0028] Figure 5 This is a perspective view of the first component provided in the first embodiment of this application;

[0029] Figure 6 This is a perspective view of the second component provided in the first embodiment of this application;

[0030] Figure 7 This is a cross-sectional view of a portion of the structure when the first component and the second component are fastened together according to the first embodiment of this application;

[0031] Figure 8 This is a cross-sectional view of a portion of the structure provided in the first embodiment of this application when the first component and the second component are separated;

[0032] Figure 9 This is a cross-sectional view of a portion of the structure when the first and second components are fastened together, as provided in the second embodiment of this application.

[0033] Figure 10 This is a cross-sectional view of a portion of the structure when the first and second components are fastened together, according to the third embodiment of this application.

[0034] Figure 11 This is a cross-sectional view of a portion of the structure provided in the fourth embodiment of this application when the first and second components are fastened together.

[0035] Explanation of reference numerals in the attached figures:

[0036] 100-Semiconductor equipment; 10-Main body; 11-Base plate; 13-Support component; 14-Main body cold plate component; 141-First main body cold plate; 142-Second main body cold plate; 15-Circuit board component; 16-Main body piping; 30-Cover; 50-Cavity module; 500-Plasma chamber; 501-Cavity cold plate; 51-First component; 5110-First mating surface; 5111-First protrusion; 5114 - First outer wall; 5115 - Second outer wall; 5116 - Third outer wall; 5117 - Second protrusion; 53 - Second component; 5310 - Second mating surface; 5311 - First recess; 5314 - First inner wall; 5315 - Second inner wall; 5316 - Third inner wall; 5317 - Second recess; 520 - Hollow cavity; 54 - First opening; 55 - Second opening; 58 - Adhesive layer. Detailed Implementation

[0037] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0038] It should be noted that when a component is said to be "fixed" to another component, it can be directly on the other component or it can be in a middle component. When a component is said to be "connected" to another component, it can be directly connected to the other component or it may be in a middle component.

[0039] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as commonly understood by one of ordinary skill in the art to which this application pertains. The terminology used in the specification of this application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. The term "and / or" as used in this application includes any and all combinations of one or more of the associated listed items.

[0040] The following detailed description of some embodiments of this application is provided in conjunction with the accompanying drawings. Unless otherwise specified, the following embodiments and features can be combined with each other.

[0041] Please see Figure 1 and Figure 2, some embodiments of the present application provide a semiconductor device 100, and the semiconductor device 100 may be an RPS device. The RPS device is a core component supporting a thin film deposition device in the semiconductor and chip manufacturing processes. The thin film deposition device may be one of a chemical vapor deposition (CVD) device, an atomic layer deposition (ALD) device, and a physical vapor deposition (PVD) device. The RPS device is used to output free radicals such as high-concentration fluorine (F) / oxygen (O) / hydrogen (H) / nitrogen (N), etc., so as to support various process application scenarios such as atomic layer deposition (ALD), metal oxide cleaning, and etching in the semiconductor manufacturing process.

[0042] For example, the RPS device may use a compound containing F as the raw material gas for F. The raw material gas enters the chamber, and under the action of an alternating electric field and a magnetic field, the raw material will be dissociated and F free radicals will be released. The active ion F- enters the process chamber and reacts with the contaminated materials in the process chamber, such as silicon oxide and silicon nitride, etc., and the generated vaporized new substances are pumped out of the process chamber by a vacuum pump, thereby ensuring the cleanliness of the process chamber.

[0043] The semiconductor device 100 includes a body 10, a cover 30 (as Figure 1 shown), and a cavity module 50. The cavity module 50 is provided in the body 10. The cover 30 is detachably covered or covered on the body 10 and the cavity module 50 for protecting the body 10, the cavity module 50 and for dust prevention. The cavity module 50 is a place where plasma reactions occur. It can be understood that the present application does not limit the semiconductor device 100 to be an RPS device. The semiconductor device 100 may also be other semiconductor devices equipped with a cavity module 50. For example, a remote plasma cleaning (RPC) device, a plasma source device, and the like.

[0044] The semiconductor device 100 may also include necessary or unnecessary parts such as a plasma driving power supply, an impedance matching circuit, a high-frequency coupling magnetic core, a gas supply system, etc. The present application does not limit the structure of the semiconductor device 100.

[0045] The body 10 includes a base plate 11, a support component 13, a body cold plate component 14, a circuit board component 15, and body piping 16. The body cold plate component 14 is connected to the body piping 16, and the body piping 16 is connected to the cavity module 50. The cavity module 50 includes a plasma chamber 500 and a cavity cold plate 501 connected to the plasma chamber 500. The body cold plate component 14, the body piping 16, and the cavity cold plate 501 are connected to form a flow path for liquid cooling working fluid to perform liquid cooling heat dissipation on the cavity module 50. The body cold plate component 14 may include a first body cold plate 141 and a second body cold plate 142. The number of cold plates in the body cold plate component 14 is not limited; for example, the second body cold plate 142 may be omitted from the body cold plate component 14. It is understood that this application does not limit the structure of the cavity module 50. For example, the cavity cold plate 501 can be omitted from the cavity module 50.

[0046] The liquid cooling medium can be a coolant, such as water, ethylene glycol solution, propylene glycol solution, or fluorinated liquid, and may also include a gas. The liquid cooling medium can be a single component or a mixture of at least two liquid cooling media (e.g., a mixture of at least two coolants). During flow, the liquid cooling medium can remain in a single phase (i.e., without phase change) or be a two-phase system (i.e., transitioning between liquid and gas phases). In some embodiments of this application, the liquid cooling medium is water. It is understood that the type of liquid cooling medium can be selected as needed.

[0047] The cavity module contains a plasma chamber. The plasma chamber is where the plasma reaction occurs, and its airtightness is extremely important. Currently, two identical half-parts are typically joined together to form the plasma chamber cavity. The joint is the weakest point in the plasma chamber, and its airtightness will be affected over time.

[0048] Based on this, please refer to Figure 3 and Figure 4 The first embodiment of this application provides a plasma chamber 500, which includes a first component 51 and a second component 53 stacked together. The first component 51 and the second component 53 enclose a hollow cavity 520. The hollow cavity 520 is used for plasma reaction. The first component 51 and the second component 53 also enclose a first opening 54 and a second opening 55, both of which are connected to the hollow cavity 520 to allow gas to flow. It is understood that the first opening 54 and the second opening 55 may be provided in at least one of the first component 51 and the second component 53.

[0049] Please refer to the following: Figure 4 and Figure 5The first component 51 includes a first mating surface 5110 and a first protrusion 5111 protruding from the first mating surface 5110. The first mating surface 5110 is located on the side of the first component 51 facing the second component 53, and the first mating surface 5110 surrounds the hollow cavity 520. Please refer to the reference section. Figure 4 and Figure 6 The second component 53 includes a second mating surface 5310 and a first recess 5311 recessed in the second mating surface 5310. (See also...) Figure 7 and Figure 8 The first mating surface 5110 and the second mating surface 5310 are oppositely arranged and sealed together. The first protrusion 5111 is received in the first recess 5311, and the outer wall of the first protrusion 5111 is in contact with the inner wall of the first recess 5311. In the plasma chamber 500 provided in this application, when the first component 51 and the second component 53 are fastened together, the first mating surface 5110 and the second mating surface 5310 are oppositely arranged and sealed together to form a first airtight structure. The concave and convex structures of the first component 51 and the second component 53 cooperate with each other. The first protrusion 5111 is received in the first recess 5311, and the outer wall of the first protrusion 5111 is in contact with the inner wall of the first recess 5311 to form a second airtight structure. The second airtight structure helps to increase the gas leakage path, thereby helping to improve the airtightness of the plasma chamber 500.

[0050] In some embodiments of this application, the plasma chamber 500 is an irregularly shaped cavity. It is understood that the plasma chamber 500 may not be an irregularly shaped cavity; the shape of the plasma chamber 500 may be annular, triangular, or other various shapes.

[0051] Please refer to it again. Figure 7 In some embodiments of this application, an adhesive layer 58 is provided between the first mating surface 5110 and the second mating surface 5310. The adhesive layer 58 is located outside the first recess 5311, meaning that no adhesive layer 58 is provided between the outer wall of the first protrusion 5111 and the inner wall of the first recess 5311. This facilitates a tighter fit between the outer wall of the first protrusion 5111 and the inner wall of the first recess 5311, reducing the generation of gaps between them. The adhesive layer 58 is formed by coating the first mating surface 5110 and the second mating surface 5310 with a bonding agent. The bonding agent can be a high-temperature organic adhesive or an inorganic adhesive, etc. In some possible implementations, an adhesive layer 58 can also be provided between the first protrusion 5111 and the inner wall of the first recess 5311, and the adhesive layer 58 can be located inside the first recess 5311.

[0052] In some embodiments of this application, the first mating surface 5110 includes a plane, and the second mating surface 5310 includes a plane. The planes of the first mating surface 5110 and the second mating surface 5310 are bonded together by an adhesive layer 58. The flatness of the adhesive layer 58 is related to the surface structure to which it is attached. Applying an adhesive to the plane helps to improve the flatness of the formed adhesive layer 58, reduces the generation of voids within the adhesive layer 58, and further improves the airtightness of the plasma chamber 500.

[0053] In some embodiments of this application, the first protrusion 5111 extends along the circumferential direction of the first mating surface 5110 and surrounds the hollow cavity 520. For example, the first protrusion 5111 extends from the first opening 54 (e.g., Figure 4 (As shown) extends to the second opening 55 (as shown) Figure 4 (As shown). The first recess 5311 extends along the circumferential direction of the second mating surface 5310 and surrounds the hollow cavity 520. For example, the first recess 5311 extends from the first opening 54 to the second opening 55, that is, the first protrusion 5111 and the first recess 5311 form an airtight structure surrounding the hollow cavity 520, which is beneficial to improving the sealing performance of the plasma chamber 500. It can be understood that the first protrusion 5111 may not extend along the circumferential direction of the first mating surface 5110 and surround the hollow cavity 520, and the first recess 5311 may not extend along the circumferential direction of the first mating surface 5110 and surround the hollow cavity 520.

[0054] Please refer again to some embodiments of this application. Figure 8 The first protrusion 5111 includes a first outer wall 5114, a second outer wall 5115, and a third outer wall 5116 connected in sequence. The first outer wall 5114 and the third outer wall 5116 are arranged opposite to each other, and the third outer wall 5116 is located on the side of the first protrusion 5111 closer to the hollow cavity 520. The inner wall of the first recess 5311 includes a first inner wall 5314, a second inner wall 5315, and a third inner wall 5316 connected in sequence. The first inner wall 5314 and the third inner wall 5316 are arranged opposite to each other, and the third inner wall 5316 is located on the side of the first recess 5311 closer to the hollow cavity 520. The first inner wall 5314 is in contact with the first outer wall 5114, the second inner wall 5315 is in contact with the second outer wall 5115, and the third inner wall 5316 is in contact with the third outer wall 5116.

[0055] The first protrusion 5111 and the first mating surface 5110 are used to form a first mating structure. The first recess 5311 and the second mating surface 5310 are used to form a second mating structure. Since the first protrusion 5111 includes a first outer wall 5114, a second outer wall 5115, and a third outer wall 5116 connected in sequence, and the first outer wall 5114 and the third outer wall 5116 are arranged opposite to each other, the cross-section of the first mating structure is approximately "U"-shaped. The first recess 5311 includes a first inner wall 5314, a second inner wall 5315, and a third inner wall 5316 connected in sequence, and the first inner wall 5314 and the third inner wall 5316 are arranged opposite to each other, the cross-section of the second mating structure is approximately "U"-shaped. In this way, when the first component 51 and the second component 53 are fastened together, the first protrusion 5111 and the first recess 5311 form a roughly "U"-shaped maze, which helps to further increase the contact area between the first component 51 and the second component 53, as well as increase the gas leakage path of the plasma chamber 500.

[0056] In some embodiments of this application, the first outer wall 5114 may be a plane, and the first inner wall 5314 may be a plane adapted to the first outer wall 5114. The second outer wall 5115 may be a plane, and the second inner wall 5315 may be a plane adapted to the second outer wall 5115. The third outer wall 5116 may be a plane, and the third inner wall 5316 may be a plane adapted to the third outer wall 5116. It is understood that the first outer wall 5114 may also include a plane and / or a curved surface, and the first inner wall 5314 may be a surface structure adapted to the first outer wall 5114; the second outer wall 5115 may also include a plane and / or a curved surface, and the second inner wall 5315 may be a surface structure adapted to the second outer wall 5115; the third outer wall 5116 may also include a plane and / or a curved surface, and the third inner wall 5316 may be a surface structure adapted to the third outer wall 5116.

[0057] This application does not limit the structure of the first protrusion 5111 and the first recess 5311. The first protrusion 5111 can be accommodated in the first recess 5311 and fit against the inner wall of the first recess 5311. For example, the cross-section of the first protrusion 5111 and the first recess 5311 can be approximately "U" shaped or semi-circular.

[0058] In some embodiments of this application, the materials of both the first component 51 and the second component 53 include alumina ceramic. It is understood that this application does not limit the materials of the first component 51 and the second component 53.

[0059] It is understood that the adhesive layer 58 can be located within the first recess 5311, that is, the adhesive layer 58 can be disposed between the outer wall of the first protrusion 5111 and the inner wall of the first recess 5311.

[0060] Please see Figure 9The second embodiment of this application provides a plasma chamber. The plasma chamber provided in the second embodiment has a structure that is generally the same as that of the plasma chamber 500 provided in the first embodiment. The difference is that the first component 51 further includes a second protrusion 5117 protruding from the first mating surface 5110. Compared with the first protrusion 5111, the second protrusion 5117 is located on the side of the first mating surface 5110 that is closer to the hollow cavity 520.

[0061] The second component 53 also includes a second recess 5317 recessed in the second mating surface 5310. Compared with the first recess 5311, the second recess 5317 is located closer to the hollow cavity 520 on the second mating surface 5310. The second protrusion 5117 is received in the second recess 5317, and the outer wall of the second protrusion 5117 is in contact with the inner wall of the second recess 5317.

[0062] The second protrusion 5117 is arranged along the circumference of the first mating surface 5110 and surrounds the hollow cavity, and the second recess 5317 extends along the circumference of the second mating surface 5310 and surrounds the hollow cavity. That is, the second protrusion 5117 and the second recess 5317 form an airtight structure surrounding the hollow cavity 520. From the outside of the plasma chamber to the hollow cavity of the plasma chamber, in addition to the sealing of the first mating surface 5110 and the second mating surface 5310, the plasma chamber 500 is also provided with at least two airtight structures, which is beneficial to improving the sealing effect of the plasma chamber.

[0063] The first mating surface 5110 is provided with a first protrusion 5111 and a second protrusion 5117. The first mating surface 5110, the first protrusion 5111, and the second protrusion 5117 are used to form a first mating structure. The cross-sectional shape of the first mating structure is approximately "M" shaped. The second mating surface 5310 is provided with a first recess 5311 and a second recess 5317. The second mating surface 5310, the first recess 5311, and the second recess 5317 are used to form a second mating structure. The cross-sectional shape of the second mating structure is approximately "M" shaped. Because the first mating surface 5110 is provided with a second protrusion 5117 and the second mating surface 5310 is provided with a second recess 5317, the second protrusion 5117 is housed in the second recess 5317, and the outer wall of the second protrusion 5117 fits against the inner wall of the second recess 5317, the contact area between the first component 51 and the second component 53 is further increased, and the gas leakage path between the first component 51 and the second component 53 is increased, which is beneficial to improving the airtightness of the plasma chamber.

[0064] In this embodiment, the adhesive layer 58 is located outside the first recess 5311 and the second recess 5317.

[0065] It is understood that the number of protrusions on the first mating surface 5110 is not limited, the number of recesses on the second mating surface 5310 is not limited, and the adhesive layer 58 can be disposed between the outer wall of the protrusion and the inner wall of the recess.

[0066] It is understood that the first protrusion 5111 and the second protrusion 5117 can be spaced apart along the circumference of the first mating surface 5110.

[0067] It is understood that the first recess 5311 and the second recess 5317 can be spaced apart along the perimeter of the second mating surface 5310.

[0068] Please see Figure 10 The third embodiment of this application provides a plasma chamber. The plasma chamber provided in the third embodiment has a structure that is generally the same as that of the plasma chamber 500 provided in the first embodiment. The difference is that the first component 51 further includes a second recess 5317 recessed in the first mating surface 5110; the second component 53 further includes a second protrusion 5117 protruding in the second mating surface 5310. The second protrusion 5117 is received in the second recess 5317, and the outer wall of the second protrusion 5117 is in contact with the inner wall of the second recess 5317.

[0069] The first mating surface 5110 is provided with a first protrusion 5111 and a second recess 5317, and the second mating surface 5310 is provided with a first recess 5311 and a second protrusion 5117. The first protrusion 5111 is received in the first recess 5311, and the second protrusion 5117 is received in the second recess 5317, which further increases the contact area between the first component 51 and the second component 53, which is beneficial to increase the complexity of the gas leakage path and further improves the airtightness of the plasma chamber 500.

[0070] The second protrusion 5117 extends from the first opening 54 to the second opening 55 along the circumferential direction of the second mating surface 5310, and the second recess 5317 extends from the first opening 54 to the second opening 55 along the circumferential direction of the first mating surface 5110. That is, the second protrusion 5117 and the second recess 5317 are arranged around the hollow cavity. The second protrusion 5117 and the second recess 5317 form an airtight structure around the hollow cavity, which is beneficial to improving the sealing effect of the plasma chamber 500.

[0071] In this embodiment, the adhesive layer 58 is located outside the first recess 5311 and the second recess 5317.

[0072] It is understood that the first protrusion 5111 and the second recess 5317 can be set along the perimeter of the first mating surface 5110.

[0073] It is understood that the number of protrusions on the first mating surface 5110 is not limited, the number of grooves on the first mating surface 5110 is not limited, the number of protrusions on the second mating surface 5310 is not limited, and the number of grooves on the second mating surface 5310 is not limited.

[0074] Please see Figure 11 The fourth embodiment of this application provides a plasma chamber. The plasma chamber provided in the fourth embodiment has a structure that is substantially the same as that of the plasma chamber 500 provided in the first embodiment, except that the first protrusion 5111 includes a first outer wall 5114 and a second outer wall 5115 connected together, and the second outer wall 5115 is connected between the first outer wall 5114 and the first mating surface 5110. The inner wall of the first recess 5311 includes a first inner wall 5314 and a second inner wall 5315 connected together, and the second inner wall 5315 is connected between the first inner wall 5314 and the second mating surface 5310. The first outer wall 5114 is in contact with the first inner wall 5314, and the second outer wall 5115 is in contact with the second inner wall 5315. The cross-sectional shapes of both the first mating structure and the second mating structure are approximately "Z".

[0075] It is understandable that the cross-section of the outer wall of the first protrusion 5111 is a stepped structure, and the cross-section of the inner wall of the first recess 5311 can be a structure adapted to the stepped structure.

[0076] Without contradiction or conflict, the first and third implementation methods can be combined with each other.

[0077] In the description of the embodiments of this application, it should be noted that the orientation or positional relationship of the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and other indicators are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this application and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this application.

[0078] The above-disclosed embodiments are merely preferred embodiments of this application and should not be construed as limiting the scope of this application. Those skilled in the art can understand that all or part of the processes for implementing the above embodiments, and equivalent variations made in accordance with the claims of this application, still fall within the scope of this application.

Claims

1. A plasma chamber, characterized in that, The plasma chamber includes a first component and a second component stacked together, the first component and the second component forming a hollow cavity, the hollow cavity being used for plasma reaction; The first component includes a first mating surface and a first protrusion protruding from the first mating surface. The first mating surface is located on the side of the first component facing the second component and surrounds the hollow cavity. The second component includes a second mating surface and a first recess recessed on the second mating surface. The second mating surface is located on the side of the second component facing the first component. The second mating surface surrounds the hollow cavity. The first mating surface and the second mating surface are opposite to each other and sealed together. The first protrusion is received in the first recess. The outer wall of the first protrusion is in contact with the inner wall of the first recess.

2. The plasma chamber according to claim 1, characterized in that, The first protrusion includes a first outer wall, a second outer wall, and a third outer wall that are connected in sequence. The first outer wall and the third outer wall are disposed opposite to each other, and the third outer wall is disposed on the side of the first protrusion that is closer to the hollow cavity. The inner wall of the first recess includes a first inner wall, a second inner wall, and a third inner wall that are connected in sequence. The first inner wall and the third inner wall are disposed opposite to each other, and the third inner wall is disposed on the side of the first recess that is closer to the hollow cavity. The first inner wall is attached to the first outer wall, the second inner wall is attached to the second outer wall, and the third inner wall is attached to the third outer wall.

3. The plasma chamber according to claim 1, characterized in that, The first component also includes a second protrusion protruding from the first mating surface; The second component further includes a second recess recessed in the second mating surface, the second protrusion being received in the second recess, and the outer wall of the second protrusion being in contact with the inner wall of the second recess.

4. The plasma chamber according to claim 1, characterized in that, The first component further includes a second recess recessed into the first mating surface; The second component further includes a second protrusion protruding from the second mating surface, the second protrusion being received within the second recess, and the outer wall of the second protrusion being in contact with the inner wall of the second recess.

5. The plasma chamber according to claim 3 or 4, characterized in that, Compared to the first protrusion, the second protrusion is closer to the hollow cavity.

6. The plasma chamber according to claim 1, characterized in that, The first protrusion extends along the circumferential direction of the first mating surface and surrounds the hollow cavity, and the first recess extends along the circumferential direction of the second mating surface and surrounds the hollow cavity.

7. The plasma chamber according to claim 1, characterized in that, In the stacking direction of the first component and the second component, an adhesive layer is provided between the second joint surface and the first joint surface. The side of the adhesive layer facing the first component is attached to and bonded to the first joint surface, and the side of the adhesive layer facing the second component is attached to and bonded to the second joint surface.

8. The plasma chamber according to claim 6, characterized in that, The adhesive layer is located outside the first recess.

9. The plasma chamber according to claim 7, characterized in that, The first mating surface includes a plane, the second mating surface includes a plane, and the planes of the first mating surface and the planes of the second mating surface are bonded together by the adhesive layer.

10. A cavity module, characterized in that, The cavity module includes a plasma chamber according to any one of claims 1-9.

11. A semiconductor device, characterized in that, The semiconductor device includes a body and a cavity module according to claim 10.

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