Wafer bonding device and semiconductor equipment

Abstract

The utility model provides a wafer bonding device and semiconductor equipment, the wafer bonding device comprises a first adsorption structure, a second adsorption structure, at least one exhaust port and an exhaust pipeline, the first adsorption structure comprises a first edge area and a first middle area, and the first middle area is used for adsorbing a first wafer; the second adsorption structure and the first adsorption structure are oppositely arranged, the second adsorption structure is used for adsorbing a second wafer, the exhaust port is located in a first edge area of the first adsorption structure, and the exhaust pipeline is located in the first adsorption structure and communicated with the exhaust port. In the wafer bonding process, the exhaust port can suck surrounding gas into the exhaust port, and when the gas flows, air between two wafers can be taken away by high-speed airflow around the exhaust port and water vapor between the two wafers can be taken away at the same time, so that the water vapor is prevented from being condensed between the two wafers, edge bubbles are prevented from being formed after bonding, and the bonding quality of the wafers is improved. And the bonding effect is improved.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a wafer bonding apparatus and semiconductor equipment. Background Technology

[0002] Wafer bonding refers to bonding two wafers together using a wafer bonding device. Wafer bonding is often carried out at room temperature and pressure, which causes continuous dehydration reactions on the wafer surface, generating a large number of water molecules. This results in bubble defects forming at the edges of the bonded wafer, leading to an unsatisfactory bonding effect. Utility Model Content

[0003] In view of this, the purpose of this application is to provide a wafer bonding apparatus and semiconductor equipment that removes moisture between two wafers, thereby preventing moisture condensation between the two wafers and thus avoiding the formation of edge bubbles after bonding, thereby improving the bonding effect. The specific solution is as follows:

[0004] This application provides a wafer bonding apparatus, comprising:

[0005] A first adsorption structure; the first adsorption structure includes a first edge region and a first middle region, the first middle region being used to adsorb a first wafer;

[0006] A second adsorption structure is disposed opposite to the first adsorption structure; the second adsorption structure is used to adsorb a second wafer, and the first wafer and the second wafer are located between the first adsorption structure and the second adsorption structure;

[0007] At least one exhaust port located in the first edge region;

[0008] An exhaust pipe is located inside the first adsorption structure, and the exhaust pipe is connected to the exhaust port.

[0009] In one possible implementation, there are multiple exhaust ports, which are evenly distributed in the first edge region.

[0010] In one possible implementation, the exhaust port is an exhaust passage that surrounds the first intermediate region.

[0011] In one possible implementation, the second adsorption structure includes a second edge region and a second intermediate region, the second intermediate region being used to adsorb the second wafer;

[0012] The wafer bonding apparatus further includes:

[0013] At least one air inlet located in the second edge region;

[0014] An air inlet pipe is located inside the second adsorption structure and is connected to the air inlet.

[0015] In one possible implementation, there are multiple air inlets, which are evenly distributed in the second edge region.

[0016] In one possible implementation, the air inlet is an air intake passage that surrounds the second intermediate region.

[0017] In one possible implementation, the size of the exhaust port is larger than the size of the intake port.

[0018] In one possible implementation, when the exhaust port is an exhaust passage and the air inlet is an air inlet passage, the width of the exhaust port is greater than or equal to twice the width of the air inlet.

[0019] In one possible implementation, the exhaust port and the air inlet are positioned opposite each other.

[0020] This application also provides a semiconductor device, including the aforementioned wafer bonding apparatus.

[0021] This application provides a wafer bonding apparatus and semiconductor device. The wafer bonding apparatus includes a first adsorption structure, a second adsorption structure, at least one exhaust port, and an exhaust pipe. The first adsorption structure includes a first edge region and a first intermediate region. The first intermediate region is used to adsorb a first wafer. The second adsorption structure is disposed opposite to the first adsorption structure and is used to adsorb a second wafer. The first and second wafers are located between the first and second adsorption structures. The exhaust port is located in the first edge region of the first adsorption structure, and the exhaust pipe is located inside the first adsorption structure and is connected to the exhaust port. Thus, during the wafer bonding process, the exhaust port can draw in surrounding gas and supply gas to the exhaust pipe. During gas flow, the air between the two wafers is carried away by the high-speed airflow around the exhaust port, and moisture between the two wafers is also carried away, thereby preventing moisture condensation between the two wafers and thus avoiding the formation of edge bubbles after bonding, improving the bonding effect. Attached Figure Description

[0022] To more clearly illustrate the technical solutions in the embodiments of this application or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0023] Figure 1This illustration shows a schematic diagram of the structure of a wafer bonding apparatus provided in an embodiment of this application;

[0024] Figure 2 A schematic diagram of a first adsorption structure provided in an embodiment of this application is shown;

[0025] Figure 3 This paper shows a schematic diagram of another first adsorption structure provided in an embodiment of the present application;

[0026] Figure 4 A schematic diagram of a second adsorption structure provided in an embodiment of this application is shown;

[0027] Figures 5(a)-5(d) show schematic diagrams of a wafer bonding process provided in an embodiment of this application. Detailed Implementation

[0028] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the specific embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0029] Many specific details are set forth in the following description in order to provide a full understanding of this application. However, this application may also be implemented in other ways different from those described herein. Those skilled in the art can make similar extensions without departing from the spirit of this application. Therefore, this application is not limited to the specific embodiments disclosed below.

[0030] Secondly, this application provides a detailed description in conjunction with schematic diagrams. When detailing the embodiments of this application, for ease of explanation, the cross-sectional views illustrating the device structure may be partially enlarged, not adhering to the usual scale. Furthermore, the schematic diagrams are merely examples and should not limit the scope of protection of this application. In addition, actual fabrication should include three-dimensional spatial dimensions of length, width, and depth.

[0031] As described in the background section, bonding at room temperature and pressure causes continuous dehydration reactions on the wafer surface, generating a large number of water molecules. Simultaneously, surface energy propels gas from the center of the wafer towards the edge, creating a high-pressure gas pressure. This escaping gas absorbs the generated water vapor and becomes saturated. (See reference...) Figure 1 The diagram illustrates wafer bonding in related technologies. It shows two silicon wafers, one above the other, bonded together at the middle before the edges, with high-pressure gas diffusing outwards. As the high-pressure gas reaches the wafer edges, the pressure drops sharply, the temperature decreases, and the saturated vapor pressure decreases abruptly. This causes the previously saturated water vapor to liquefy. Especially when there are fine scratches or small particles at the wafer edges, these provide condensation nuclei for the water vapor, making it easier for it to condense and resulting in bonding bubble defects at the wafer edges.

[0032] Based on the above technical problems, this application provides a wafer bonding apparatus and semiconductor equipment. The wafer bonding apparatus includes a first adsorption structure, a second adsorption structure, at least one exhaust port, and an exhaust pipe. The first adsorption structure includes a first edge region and a first intermediate region, the first intermediate region being used to adsorb a first wafer. The second adsorption structure is disposed opposite to the first adsorption structure and is used to adsorb a second wafer. The first and second wafers are located between the first and second adsorption structures. The exhaust port is located in the first edge region of the first adsorption structure, and the exhaust pipe is located inside the first adsorption structure and is connected to the exhaust port. During the wafer bonding process, the exhaust port can draw in surrounding gas and supply gas to the exhaust pipe. When the gas flows, the air between the two wafers is carried away by the high-speed airflow around the exhaust port, and at the same time, the water vapor between the two wafers is carried away, thereby preventing water vapor from condensing between the two wafers, thus preventing the formation of edge bubbles after bonding and improving the bonding effect.

[0033] For ease of understanding, the wafer bonding apparatus and semiconductor device provided in the embodiments of this application will be described in detail below with reference to the accompanying drawings.

[0034] refer to Figure 1 The diagram shown is a schematic diagram of a wafer bonding device provided in an embodiment of this application. The device includes a first adsorption structure 101, a second adsorption structure 102 disposed opposite to the first adsorption structure 101, at least one exhaust port 103 located in the first edge region, and an exhaust pipe 104 located inside the first adsorption structure 101.

[0035] Specifically, the first adsorption structure 101 is used to adsorb the first wafer 201. The first adsorption structure 101 can be, for example, a bottom chuck. The first wafer 201 is placed above the first adsorption structure 101 and adsorbed by adsorption force. The first adsorption structure 101 can be divided into a middle region and an edge region, respectively denoted as the first middle region and the first edge region. The first middle region is used to adsorb the first wafer 201, meaning the first wafer 201 is adsorbed in the middle region of the first adsorption structure 101 to ensure stable adsorption. As an example, the first edge region can have a radius between 155 mm and 165 mm.

[0036] The second adsorption structure 102 is disposed opposite to the first adsorption structure 101. As an example, the second adsorption structure 102 can be a top chuck. The second adsorption structure 102 is used to adsorb the second wafer 202, with the first wafer 201 and the second wafer 202 located between the first adsorption structure 101 and the second adsorption structure 102. In short, the second wafer 202 is located below the second adsorption structure 102 and is adsorbed by adsorption force. The first wafer 201 and the second wafer 202 are disposed opposite to each other, so that during wafer bonding, the distance between the first adsorption structure 101 and the second adsorption structure 102 can be controlled to bond the two wafers together.

[0037] Specifically, at least one exhaust port 103 can be provided in the first edge region of the first adsorption structure 101, allowing air to enter the exhaust port 103. An exhaust pipe 104 is connected to the exhaust port 103 and discharges through the exhaust pipe 104, thereby drawing away the air between the two wafers and carrying away moisture between them, ensuring tight bonding between the two wafers. Furthermore, the exhaust pipe 104 can be connected to an air extraction device for air extraction. As an example, in... Figure 1 The dashed arrows in the diagram indicate the direction of gas flow and show two exhaust pipes 104.

[0038] In short, during the wafer bonding process, the exhaust port 103 can draw in the surrounding gas and deliver the gas to the exhaust pipe 104. When the gas flows, the air between the two wafers will be carried away by the high-speed airflow around the exhaust port 103, and at the same time, the water vapor between the two wafers will be carried away, thereby preventing water vapor from condensing between the two wafers, thus preventing the formation of edge bubbles after bonding and improving the bonding effect.

[0039] In one possible implementation, there can be multiple exhaust ports 103, which can be evenly distributed in the first edge region. This allows the air between the two wafers to flow evenly to the multiple exhaust ports 103, thereby allowing water vapor to be discharged evenly. This avoids the situation where there is more water vapor on one side and less water vapor on the other side, ensuring that water vapor in all directions can be drawn away evenly.

[0040] As an example, see reference Figure 2 As shown, the first adsorption structure 101 has four exhaust ports 103, which are evenly distributed. Of course, the number and shape of the exhaust ports 103 are not specifically limited here. The shape of the exhaust ports 103 can be, for example, circular or square.

[0041] In one possible implementation, the vent 103 can be a vent passage 105, which surrounds the first intermediate region. That is, the vent 103 can be a continuous vent passage 105, with the first intermediate region located inside the vent passage 105. Because the vent passage 105 has a sufficiently large channel size, it can accelerate the removal of moisture, quickly expelling moisture between the two wafers, thereby improving wafer bonding efficiency and bonding effect. For example, see [reference needed]. Figure 3 As shown, the first adsorption structure 101 has a ring-shaped exhaust passage 105, and the diameter of the exhaust passage 105 is denoted as d2.

[0042] In one possible implementation, the second adsorption structure 102 may include a second edge region and a second intermediate region, the second intermediate region being used to adsorb the second wafer 202, and the wafer bonding device may further include at least one air inlet 106 located in the second edge region, and an air inlet pipe 107 located inside the second adsorption structure 102, the air inlet pipe 107 being connected to the air inlet 106.

[0043] Specifically, the second adsorption structure 102 can be divided into a middle region and an edge region, referred to as the second middle region and the second edge region, respectively. The second wafer 202 is adsorbed on the surface of the second middle region, and the second edge region is used to provide an air inlet 106. The air inlet 106 can be connected to a gas supply device to provide gas to the air inlet 106. As an example, the gas supply device can provide inert gases such as N2, He, or Ar. Figure 1 The diagram shows the air inlet 106 and the air inlet pipe 107. The dashed arrows in the diagram indicate the direction of gas flow. Gas can enter through the air inlet pipe 107, flow out through the air inlet 106, then flow to the exhaust port 103, and finally exit through the exhaust pipe 104. This creates an "air column" between the two wafers, allowing air and moisture in the edge area to flow along with the air curtain to the exhaust port 103 for discharge. The gas flow within the air column is faster, quickly carrying away moisture. The shape of the air inlet pipe 107 is not specifically limited here; it may have bends or not.

[0044] In one possible implementation, there can be multiple air inlets 106, which can be evenly distributed in the second edge region. Gas can flow through the multiple air inlets 106, so that water vapor between the two wafers can be carried away by multiple "air columns" and the water vapor in all directions can be drawn away evenly.

[0045] In one possible implementation, the air inlet 106 is an air intake passage 108, which surrounds the second intermediate region. Thus, the air intake passage 108 can form an "air curtain" with the exhaust passage 105, which can separate the intermediate region and the edge region. The air and water vapor in the edge region can flow to the exhaust port 103 along with the air curtain, which is more effective.

[0046] In other words, during the wafer bonding process, the air intake passage 108 of the second adsorption structure 102 can blow out a high-speed airflow downwards, and the first adsorption structure 101 activates the exhaust device, which flows away through the exhaust passage 105, thereby forming a ring of air curtain at the edge of the upper and lower adsorption structures. The air between the upper and lower wafers will flow towards the high-speed airflow and be carried away, thus forming a closed low-pressure microenvironment between the two wafers. The water vapor generated during bonding can be quickly carried away, thereby improving the problem of edge bubbles after bonding and further reducing the probability of edge bubbles appearing.

[0047] In one possible implementation, the exhaust port 103 is larger than the intake port 106, thereby enabling the exhaust port 103 to quickly remove the gas from the intake port 106 and the gas between the two wafers, accelerating gas flow and driving away more water vapor.

[0048] In one possible implementation, when the exhaust port 103 is the exhaust passage 105 and the intake port 106 is the intake passage 108, the width of the exhaust port 103 is greater than or equal to twice the width of the intake port 106. That is, the diameter of the exhaust passage 105 is at least twice the diameter of the intake passage 108, thereby ensuring that gas can be discharged quickly. (Reference) Figure 4 The diagram shown is a schematic diagram of a second adsorption structure provided in an embodiment of this application. The second adsorption structure 102 has an air inlet passage 108 with an inlet diameter of d1 and d2 ≥ 2*d1.

[0049] In one possible implementation, the exhaust port 103 and the air inlet 106 are positioned opposite each other, thereby ensuring that gas can flow smoothly from the air inlet 106 to the exhaust port 103, and ensuring that water vapor is carried away smoothly.

[0050] Referring to Figures 5(a)-5(d), which are schematic diagrams of a wafer bonding process provided in an embodiment of this application, during the wafer bonding process, after the two wafers are aligned, the first adsorption structure 101 can move upward to the set bonding position, as shown in Figure 5(a). Then, the exhaust device connected to the first adsorption structure 101 and the gas supply device connected to the second adsorption structure 102 are turned on. After waiting for 5-10 seconds, an air curtain is formed, and the central pin of the second adsorption structure 102 descends downward, as shown in Figure 5(b). After the middle parts of the two wafers are bonded together, the vacuum of the second adsorption structure 102 adsorbing the second wafer 202 is closed, and the second wafer 202 is no longer adsorbed, so that the edge parts of the two wafers are also bonded together, as shown in Figure 5(c), thereby completing the bonding. After waiting for 1-10 seconds, the gas supply device and the exhaust device are turned off, and the central pin is retracted, as shown in Figure 5(d).

[0051] This application provides a wafer bonding apparatus, which includes a first adsorption structure, a second adsorption structure, at least one vent, and an venting pipe. The first adsorption structure includes a first edge region and a first intermediate region, with the first intermediate region used to adsorb a first wafer. The second adsorption structure is disposed opposite to the first adsorption structure and is used to adsorb a second wafer. The first and second wafers are located between the first and second adsorption structures. The vent is located in the first edge region of the first adsorption structure, and the venting pipe is located inside the first adsorption structure and communicates with the vent. During wafer bonding, the vent can draw in surrounding gas and supply gas to the venting pipe. As the gas flows, the air between the two wafers is carried away by the high-speed airflow around the vent, which also carries away moisture between the two wafers, thus preventing moisture condensation between the two wafers and avoiding the formation of edge bubbles after bonding, thereby improving the bonding effect.

[0052] This application also provides a semiconductor device that may include a wafer bonding apparatus located inside a cavity of the semiconductor device.

[0053] This application provides a semiconductor device that may include a wafer bonding apparatus. During the wafer bonding process, an exhaust port can draw in surrounding gas and supply gas to the exhaust pipe. As the gas flows, the air between the two wafers is carried away by the high-speed airflow around the exhaust port, and moisture between the two wafers is also carried away, thereby preventing moisture from condensing between the two wafers and thus avoiding the formation of edge bubbles after bonding, improving the bonding effect.

[0054] The various embodiments in this specification are described in a progressive manner. Similar or identical parts between embodiments can be referred to mutually. Each embodiment focuses on its differences from other embodiments. In particular, the method embodiments are basically similar to the apparatus embodiments, so the description is relatively simple; relevant parts can be referred to the descriptions of the apparatus embodiments.

[0055] The above description is merely a preferred embodiment of this application. Although this application has disclosed preferred embodiments above, it is not intended to limit this application. Any person skilled in the art can make many possible variations and modifications to the technical solutions of this application using the methods and techniques disclosed above, or modify them into equivalent embodiments with equivalent changes, without departing from the scope of the technical solutions of this application. Therefore, any simple modifications, equivalent changes, and modifications made to the above embodiments based on the technical essence of this application without departing from the content of the technical solutions of this application shall still fall within the protection scope of the technical solutions of this application.

Claims

1. A wafer bonding apparatus, characterized in that, include: First adsorption structure; The first adsorption structure includes a first edge region and a first middle region, wherein the first middle region is used to adsorb the first wafer; A second adsorption structure disposed opposite to the first adsorption structure; The second adsorption structure is used to adsorb the second wafer, and the first wafer and the second wafer are located between the first adsorption structure and the second adsorption structure; At least one exhaust port located in the first edge region; An exhaust pipe is located inside the first adsorption structure, and the exhaust pipe is connected to the exhaust port.

2. The wafer bonding apparatus according to claim 1, characterized in that, There are multiple exhaust ports, which are evenly distributed in the first edge region.

3. The wafer bonding apparatus according to claim 1, characterized in that, The exhaust port is an exhaust passage, and the exhaust passage surrounds the first intermediate area.

4. The wafer bonding apparatus according to claim 1, characterized in that, The second adsorption structure includes a second edge region and a second middle region, wherein the second middle region is used to adsorb the second wafer; The wafer bonding apparatus further includes: At least one air inlet located in the second edge region; An air inlet pipe is located inside the second adsorption structure and is connected to the air inlet.

5. The wafer bonding apparatus according to claim 4, characterized in that, There are multiple air inlets, which are evenly distributed in the second edge region.

6. The wafer bonding apparatus according to claim 4, characterized in that, The air inlet is an air intake passage, and the air intake passage surrounds the second intermediate region.

7. The wafer bonding apparatus according to claim 4, characterized in that, The size of the exhaust port is larger than the size of the air inlet.

8. The wafer bonding apparatus according to claim 7, characterized in that, When the exhaust port is an exhaust passage and the air inlet is an air inlet passage, the width of the exhaust port is greater than or equal to twice the width of the air inlet.

9. The wafer bonding apparatus according to claim 4, characterized in that, The exhaust port and the air inlet are positioned opposite each other.

10. A semiconductor device, characterized in that, Includes the wafer bonding apparatus according to any one of claims 1-9.

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