Solar cell, photovoltaic module and photovoltaic system

Abstract

The utility model is suitable for the technical field of solar power generation, and provides a solar cell, a photovoltaic assembly and a photovoltaic system, the solar cell comprises a silicon substrate, a doping layer and a passivation layer, the front and / or back of the silicon substrate is provided with the doping layer, and one side surface of the doping layer far away from the silicon substrate is provided with the passivation layer. A plurality of grooves are formed in the back face of the back contact solar cell, the positions where the grooves are located do not comprise the passivation layers, and first synaptic structures connected with the doping layers are arranged in the center areas of the bottoms of the grooves. The first synapse structure is formed in the central area of the bottom of the groove, so that good ohmic contact can be formed between the metal grid line and the first synapse structure during subsequent printing of the metal grid line, thereby improving the carrier collection efficiency and improving the conversion efficiency of the battery.

Description

Technical Field

[0001] This utility model belongs to the field of solar power generation technology, and in particular relates to a solar cell, photovoltaic module and photovoltaic system. Background Technology

[0002] Solar cells are devices that directly convert light energy into electrical energy through the photoelectric effect or photochemical effect. BC (Back Contact) cells are a general term for various types of back-contact crystalline silicon solar cells, including HPBC, TBC, and HBC. In BC cells, both the emitter electrode and the base electrode are located on the back side. This back-contact structure reduces or eliminates light loss from the front grid lines by moving the emitter electrode to the back of the cell, thus improving efficiency. Furthermore, it facilitates assembly during module packaging; since all electrodes are on the back, the spacing between cells can be reduced, increasing packing density and improving the appearance.

[0003] BC cells require laser-printed metal grid lines to collect charge carriers. However, currently available BC cells cannot form good ohmic contacts during grid line printing, which reduces the probability of charge carrier collection and thus leads to reduced conversion efficiency. Utility Model Content

[0004] This utility model provides a solar cell designed to solve the problem of low carrier collection rate in existing solar cells, which leads to reduced conversion efficiency.

[0005] The present invention is implemented as follows: a solar cell includes a silicon substrate, a doped layer, and a passivation layer. The doped layer is disposed on the front and / or back of the silicon substrate, and a passivation layer is disposed on the side of the doped layer away from the silicon substrate. A plurality of grooves are disposed on the back of the solar cell in contact with the back of the solar cell. The location of the grooves does not include the passivation layer. A first synaptic structure connected to the doped layer is disposed in the central area of ​​the bottom of the groove.

[0006] Furthermore, the bottom of the groove is provided with an edge region located outside the central region, and the edge region is provided with a second synaptic structure.

[0007] Furthermore, along the direction away from the silicon substrate, the edge region is higher than the center region.

[0008] Furthermore, the central region is provided with several first zones, and at least a portion of the first synaptic structures at the boundary of adjacent first zones are higher than the height of the first synaptic structures within the first zone.

[0009] Furthermore, the central region includes the boundary of the base of the micro-pyramid structure, and at least a portion of the first synaptic structures located at the boundary are higher than the height of the remaining first synaptic structures.

[0010] Furthermore, the groove edge region extends away from the central region to form a gap space between the doped layer and the passivation layer.

[0011] Furthermore, a third synaptic structure is provided on the surface of the passivation layer facing the gap space.

[0012] Furthermore, a fourth synaptic structure is provided within the gap space, with its two ends connected to the doped layer and the passivation layer, respectively.

[0013] Furthermore, the first synaptic structure, the second synaptic structure, and the third synaptic structure include at least one of the following shapes: round, pointed, spherical, conical, and irregular.

[0014] Furthermore, the lengths of the bases of the first, second, and third synaptic structures are less than 500 nm.

[0015] Furthermore, the heights of the first, second, and third synaptic structures are less than 500 nm.

[0016] Furthermore, the diameter of the groove is between 12 micrometers and 30 micrometers.

[0017] Secondly, this application also provides a photovoltaic module, including the solar cell as described above.

[0018] Thirdly, this application also provides a photovoltaic system, including the photovoltaic module as described above.

[0019] The beneficial effect of this application is that the back-contact solar cell includes a silicon substrate, a doped layer, and a passivation layer. The doped layer is disposed on the back side of the silicon substrate, and the passivation layer is disposed on the side of the doped layer away from the silicon substrate. Several grooves are disposed on the back side of the back-contact solar cell, and the passivation layer is not present in the location of the grooves. A first synaptic structure connected to the doped layer is disposed in the central region of the bottom of the groove. By forming the first synaptic structure in the central region of the bottom of the groove, a good ohmic contact can be formed between the metal grid lines and the first synaptic structure during subsequent printing of metal grid lines, thereby improving carrier collection efficiency and increasing the cell's conversion efficiency. Attached Figure Description

[0020] Figure 1 This is a schematic diagram of the film structure of a solar cell with laser-cut film according to an embodiment of the present application;

[0021] Figure 2 This is a schematic diagram of the structure of a laser-driven solar cell according to an embodiment of the present application;

[0022] Figure 3 This is a schematic diagram of the groove structure of an embodiment of the solar cell provided in this application;

[0023] Figure 4 This is a schematic diagram of the first synaptic structure of an embodiment of the solar cell provided in this application;

[0024] Figure 5 This is a cross-sectional schematic diagram of the groove of a solar cell according to an embodiment of the present application;

[0025] Figure 6 This is a schematic diagram of the gap space structure of an embodiment of the solar cell provided in this application;

[0026] Figure 7 This is a schematic diagram of the internal interface of the groove in an embodiment of the solar cell provided in this application;

[0027] Figure 8 This is a schematic diagram of the structure of a solar cell provided in this application, showing a further recessed bottom of the groove;

[0028] Figure 9 This is a schematic diagram of a structure of a solar cell provided in this application, in which a first section is disposed within a groove.

[0029] Figure 10 This is a schematic diagram of the base boundary of a pyramid within a groove in one embodiment of the solar cell provided in this application. Detailed Implementation

[0030] To make the objectives, technical solutions, and advantages of this utility model clearer, the present utility model will be further described in detail below with reference to the accompanying drawings and embodiments. Examples of embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present utility model, and should not be construed as limiting the present utility model. Furthermore, it should be understood that the specific embodiments described herein are merely for explaining the present utility model and are not intended to limit the present utility model.

[0031] In the description of this utility model, it should be understood that the terms "length", "width", "upper", "lower", "left", "right", "horizontal", "top", "bottom", etc., indicate the orientation or positional relationship based on the orientation or positional relationship shown in the accompanying drawings. They are only for the convenience of describing this utility model and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation. Therefore, they should not be construed as limitations on this utility model.

[0032] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, features defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this utility model, "a plurality of" means two or more, unless otherwise explicitly specified.

[0033] In the description of this utility model, it should be noted that, unless otherwise explicitly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection, an electrical connection, or a connection that allows for communication; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0034] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0035] The following disclosure provides numerous different embodiments or examples for implementing various structures of the present invention. To simplify the disclosure, specific examples of components and arrangements are described below. These are merely examples and are not intended to limit the scope of the invention. Furthermore, reference numerals and / or letters may be repeated in different examples; such repetition is for simplification and clarity and does not in itself indicate a relationship between the various embodiments and / or arrangements discussed. In addition, examples of various specific processes and materials are provided in this invention, but those skilled in the art will recognize the application of other processes and / or the use of other materials.

[0036] The back-contact solar cell of this application includes a silicon substrate, a doped layer, and a passivation layer. The doped layer is disposed on the back side of the silicon substrate, and a passivation layer is disposed on the side of the doped layer away from the silicon substrate. Several grooves are disposed on the back side of the back-contact solar cell, and the passivation layer is not present in the location of the grooves. A first synaptic structure connected to the doped layer is disposed in the central region of the bottom of the groove. By forming the first synaptic structure in the central region of the bottom of the groove, a good ohmic contact can be formed between the metal grid lines and the first synaptic structure during subsequent printing of metal grid lines, thereby improving carrier collection efficiency and increasing the cell's conversion efficiency.

[0037] Example 1

[0038] like Figures 1 to 10 As shown, one embodiment of this application provides a back-contact solar cell, including a silicon substrate 100, a doped layer 200, and a passivation layer 300. The doped layer 200 is disposed on the back side of the silicon substrate 100, and the passivation layer 300 is disposed on the side of the doped layer 200 away from the silicon substrate 100. A plurality of grooves 400 are disposed on the back side of the back-contact solar cell. The location of the grooves 400 does not include the passivation layer. A first synaptic structure 510 connected to the doped layer 200 is disposed in the central region 410 at the bottom of the grooves 400.

[0039] Silicon substrate 100 refers to the basic material used in the manufacture of semiconductor devices. It is usually a single crystal or polycrystalline material made through highly purified crystal growth technology, which will not be elaborated further.

[0040] Optionally, the silicon substrate 100 can be an N-type silicon wafer or a P-type silicon wafer. The N-type silicon wafer is obtained by adding a pentavalent element (such as phosphorus) to a single crystal or polycrystalline material, and the P-type silicon wafer is obtained by adding a trivalent element (such as boron, gallium, or indium) to a single crystal or polycrystalline material. Further details are omitted.

[0041] The silicon substrate 100 has a front side and a back side. The front side of the silicon substrate 100 corresponds to the light-receiving surface of the solar cell, and similarly, the back side of the silicon substrate 100 corresponds to the back-lighting surface of the solar cell.

[0042] A doped layer 200 and a passivation layer 300 are sequentially stacked on the back side of a silicon substrate 100. In some embodiments, the doped layer 200 is formed by further doping the silicon substrate 100 with trivalent or pentavalent elements. For example, taking an N-type silicon wafer as an example, doping the N-type silicon wafer with trivalent elements yields an emitter doped layer 200, which can be considered a p+ layer. Similarly, doping the N-type silicon wafer with pentavalent elements yields a diffusion doped layer 200, which can be considered an n+ layer.

[0043] In implementation, a passivation layer 300 is disposed on the doped layer 200. The passivation layer 300 refers to a thin film that "passivates" or deactivates the surface of the solar cell. The passivation layer 300 is typically composed of at least one of silicon nitride, aluminum oxide, silicon oxynitride, and silicon oxide, reducing the activity of the solar cell surface and thus lowering the surface recombination rate.

[0044] Optionally, the passivation layer 300 can be prepared by PECVD (plasma enhanced chemical vapor deposition) or LPCVD (low pressure chemical vapor deposition), which will not be elaborated further.

[0045] After fabricating the doped layer 200 and passivation layer 300, it is necessary to use a laser to create a film on the passivation layer 300, for example, using a picosecond / femtosecond laser. The laser irradiates the target location of the passivation layer 300, causing the passivation layer 300 at the target location to undergo a process of instantaneous vaporization and re-solidification under the action of the high-temperature laser spot. In other words, a groove 400 is formed on the passivation layer 300 by laser film creation, such as... Figure 2 As shown, the back of the back contact solar cell is provided with several grooves 400, and the location of the grooves 400 does not include the passivation layer 300.

[0046] Optionally, the diameter of the groove 400 is 12 micrometers to 30 micrometers, such as 13 nanometers, 14 nanometers, 15 nanometers, 18 nanometers, 20 nanometers, 25 nanometers, 27 nanometers, 29 nanometers or any value from 12 micrometers to 30 micrometers, without limitation.

[0047] A first synaptic structure 510 is provided in the central region 410 at the bottom of the groove 400, such as... Figure 1 As shown, the first synaptic structure 510 is a protrusion connected to the doped layer 200, such as a columnar or conical protrusion. The first synaptic structure 510 is formed by the doped layer 200 under the action of a high-temperature laser spot during laser film opening, and will not be described in detail.

[0048] The first synaptic structure 510 is a raised structure. When the metal grid lines are printed subsequently, the metal grid lines contact and adhere to the first synaptic structure 510, thereby forming a good ohmic contact.

[0049] Optionally, the length of the bottom of the first synaptic structure 510 is less than 500 nm. For example, when the synaptic structure is round or conical, the bottom diameter of the synaptic structure can be any value of 5 nm, 6 nm, 7 nm, 10 nm, 15 nm, 20 nm, 50 nm, 100 nm, 200 nm, 400 nm or less than 500 nm, without limitation.

[0050] In some embodiments, the height of the first synaptic structure 510 is less than 500 nanometers, such as any value among 5 nanometers, 6 nanometers, 7 nanometers, 10 nanometers, 15 nanometers, 20 nanometers, 25 nanometers, 30 nanometers, 50 nanometers, 100 nanometers, 200 nanometers, 400 nanometers or less than 500 nanometers, without limitation.

[0051] The back-contact solar cell of this application includes a silicon substrate 100, a doped layer 200, and a passivation layer 300. The doped layer 200 is disposed on the back side of the silicon substrate 100, and the passivation layer 300 is disposed on the side of the doped layer 200 away from the silicon substrate 100. A plurality of grooves 400 are disposed on the back side of the back-contact solar cell. The location of the grooves 400 does not include the passivation layer 300. A first synaptic structure 510 connected to the doped layer 200 is disposed in the central region 410 at the bottom of the groove 400. By forming the first synaptic structure 510 in the central region 410 at the bottom of the groove 400, a good ohmic contact can be formed between the metal grid lines and the first synaptic structure 510 during subsequent printing of metal grid lines, thereby improving carrier collection efficiency and increasing the cell's conversion efficiency.

[0052] In one way, to observe the synaptic structure, for example to facilitate the observation of the first synaptic structure 510, the electrodes on the finished battery cell can be washed away.

[0053] In some alternative embodiments, such as Figure 3 and Figure 7 As shown, the bottom of the groove 400 is provided with an edge region 420 located around the central region 410, and the edge region 420 is provided with a second synaptic structure 520.

[0054] The bottom of the groove 400 can be divided into a central region 410 and an edge region 420 located around the central region 410. For example, the central region 410 can be considered as the inner circle of the bottom of the groove 400, and the edge region 420 can be considered as the outer ring of the bottom of the groove 400. The edge region 420 is provided with a second synaptic structure 520, which increases the roughness of the bottom of the groove 400, thereby better bonding with the metal grid wire, making the contact between the metal grid wire and the second synaptic structure 520 more stable, and preventing the grid wire electrode from easily detaching.

[0055] As one possible approach, along the direction opposite to the silicon substrate 100, the edge region 420 is higher than the central region 410, meaning that the bottom of the groove 400 can be further recessed, such as... Figure 8 As shown, this further improves the contact effect with the electrode.

[0056] Optionally, the central region 410 is provided with a plurality of first regions 411, and at least a portion of the first synaptic structures 510 at the boundary of adjacent first regions 411 are higher than the height of the first synaptic structures 510 within the first region 411.

[0057] The central region 410 can be divided into several first regions 411, and at least some of the first synaptic structures 510 located at the boundaries of adjacent first regions 411 are higher in height, such as... Figure 9 As shown, 41a is the first synaptic structure 510 at the boundary of the adjacent first region 411, and 41b is the first synaptic structure 510 within the first region 411. The height of some or all of the first synaptic structures 510 in 41a is higher than the height of the first synaptic structures 510 in 41b. When printing electrodes in the future, the connection between the electrode and the doped layer 200 is more stable and the conductivity is better.

[0058] In some possible embodiments, the first synaptic structure 510 located at the edge of the central region 410 gradually rises towards the first synaptic structure 510 located at the center point of the central region 410. Alternatively, the first synaptic structure 510 located at the edge of the central region 410 may rise in stages towards the first synaptic structure 510 located at the center point of the central region 410. No limitation is made.

[0059] Furthermore, the central region 410 includes the boundary 412 of the base of the miniature pyramid structure, such as... Figure 10 As shown, at least a portion of the first synaptic structure 510 located at boundary 412 is higher than the height of the remaining first synaptic structures 510.

[0060] A micro-pyramid structure refers to a dense array of micro-protrusions formed on a doped region. Typically, these micro-protrusions are pyramid-shaped. As one possible implementation, the apex of these pyramid-shaped micro-protrusions can be removed, leaving only the base. During laser delamination, some or all of the first synaptic structures 510 formed at the boundary of the base are higher than the remaining first synaptic structures 510 within the groove 400, improving contact with the electrode.

[0061] In some alternative embodiments, such as Figure 6 As shown, during laser film opening, the laser spot causes delamination between the doped layer 200 and the passivation layer 300 around the groove 400. Specifically, the edge region 420 extends away from the central region 410, forming a gap space 430 between the doped layer 200 and the passivation layer 300. During subsequent printing of metal grid lines, the metal paste can penetrate into the gap space 430, resulting in a more stable connection between the cured metal grid lines and the battery.

[0062] In some embodiments, a third synaptic structure 530 is provided on the side surface of the passivation layer 300 facing the gap space 430. The passivation layer 300 is provided with the third synaptic structure 530 in the gap space 430. When the metal grid lines are printed subsequently, the metal paste penetrates into the gap space 430 and contacts and adheres to the third synaptic structure 530, further improving the stability of the connection between the metal grid lines and the battery.

[0063] In some alternative embodiments, a fourth synaptic structure 540 is provided in the gap space 430. The two ends of the fourth synaptic structure 540 are connected to the doped layer 200 and the passivation layer 300, respectively. The fourth synaptic structure 540 can be regarded as a connecting pillar connecting the doped layer 200 and the passivation layer 300, so that the subsequent printed metal grid lines are more firmly connected to the battery.

[0064] Optionally, the first synaptic structure 510, the second synaptic structure 520, and the third synaptic structure 530 include at least one of the following shapes: spherical, pointed, spherical, conical, and irregular. Each synaptic structure can be a spherical structure, such as... Figure 4 As shown in A2. It can also be a spherical structure, such as... Figure 4 As shown in A1. Or a conical structure, such as... Figure 4 As shown in Figure A3. In some possible embodiments, each synaptic structure may also be a combination of various shapes and structures. For example, each synaptic structure may include a spherical structure at the top of the spherical ...

[0065] Optionally, the shape, size, and height of the second synaptic structure 520 and the third synaptic structure 530 can refer to the first synaptic structure 510 described above, and will not be repeated here.

[0066] Example 2

[0067] In some alternative embodiments, this application also provides a photovoltaic module, including the solar cell as described above.

[0068] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the structure and implementation principle of the photovoltaic module described above can be referred to the corresponding structure and implementation principle in the aforementioned Embodiment 1, and will not be repeated here.

[0069] The back-contact solar cell of this application includes a silicon substrate 100, a doped layer 200, and a passivation layer 300. The doped layer 200 is disposed on the back side of the silicon substrate 100, and the passivation layer 300 is disposed on the side of the doped layer 200 away from the silicon substrate 100. A plurality of grooves 400 are disposed on the back side of the back-contact solar cell. The location of the grooves 400 does not include the passivation layer 300. A first synaptic structure 510 connected to the doped layer 200 is disposed in the central region 410 at the bottom of the groove 400. By forming the first synaptic structure 510 in the central region 410 at the bottom of the groove 400, a good ohmic contact can be formed between the metal grid lines and the first synaptic structure 510 during subsequent printing of metal grid lines, thereby improving carrier collection efficiency and increasing the cell's conversion efficiency.

[0070] Example 3

[0071] In some alternative embodiments, this application also provides a photovoltaic system including the photovoltaic modules described above.

[0072] In practice, photovoltaic (PV) systems can be applied to PV power plants, such as ground-mounted, rooftop, and floating power plants, as well as to equipment or devices that utilize solar energy for power generation, such as user solar power supplies, solar streetlights, solar cars, and solar buildings. Of course, it's understandable that the application scenarios for PV systems are not limited to these; that is, PV systems can be applied in all areas that require solar energy for power generation. Taking a PV power grid as an example, a PV system can include PV arrays, combiner boxes, and inverters. A PV array can be a combination of multiple PV modules; for example, multiple PV modules can form multiple PV arrays. The PV arrays are connected to combiner boxes, which collect the current generated by the PV arrays. The collected current then flows through an inverter, converting it into AC power required by the mains grid before being connected to the mains grid to achieve solar power supply.

[0073] Those skilled in the art will clearly understand that, for the sake of convenience and brevity, the structure and implementation principle of the photovoltaic system described above can be referred to the corresponding structure and implementation principle in the aforementioned Embodiments 1 and 2, and will not be repeated here.

[0074] The back-contact solar cell of this application includes a silicon substrate 100, a doped layer 200, and a passivation layer 300. The doped layer 200 is disposed on the back side of the silicon substrate 100, and the passivation layer 300 is disposed on the side of the doped layer 200 away from the silicon substrate 100. A plurality of grooves 400 are disposed on the back side of the back-contact solar cell. The location of the grooves 400 does not include the passivation layer 300. A first synaptic structure 510 connected to the doped layer 200 is disposed in the central region 410 at the bottom of the groove 400. By forming the first synaptic structure 510 in the central region 410 at the bottom of the groove 400, a good ohmic contact can be formed between the metal grid lines and the first synaptic structure 510 during subsequent printing of metal grid lines, thereby improving carrier collection efficiency and increasing the cell's conversion efficiency.

[0075] The above are merely preferred embodiments of the present utility model and are not intended to limit the present utility model. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present utility model should be included within the protection scope of the present utility model.

Claims

1. A solar cell, characterized in that, The solar cell includes a silicon substrate, a doped layer, and a passivation layer. The doped layer is disposed on the back side of the silicon substrate, and the passivation layer is disposed on the side of the doped layer away from the silicon substrate. The back side of the solar cell has a plurality of grooves, the location of which does not include the passivation layer. A first synaptic structure connected to the doped layer is disposed in the central region of the bottom of the groove.

2. The solar cell as described in claim 1, characterized in that, The bottom of the groove is provided with an edge region located outside the central region, and the edge region is provided with a second synaptic structure.

3. The solar cell as described in claim 2, characterized in that, Along the direction away from the silicon substrate, the edge region is higher than the center region.

4. The solar cell according to any one of claims 1 to 3, characterized in that, The central region is provided with a plurality of first zones, and at least a portion of the height of the first synaptic structures at the boundary of adjacent first zones is higher than the height of the first synaptic structures within the first zone.

5. The solar cell as described in claim 1, characterized in that, The central region includes the boundary of the base of a micro-pyramid structure, and at least a portion of the first synaptic structure located on the boundary is higher than the height of the remaining first synaptic structures.

6. The solar cell as described in claim 2, characterized in that, The edge region of the groove extends away from the central region to form a gap space between the doped layer and the passivation layer.

7. The solar cell as claimed in claim 6, characterized in that, The passivation layer has a third synaptic structure on the side surface facing the gap space.

8. The solar cell as claimed in claim 6 or 7, characterized in that, A fourth synaptic structure is provided within the gap space, and the two ends of the fourth synaptic structure are respectively connected to the doped layer and the passivation layer.

9. The solar cell as claimed in claim 7, characterized in that, The first synaptic structure, the second synaptic structure, and the third synaptic structure include at least one of the following: round, pointed, spherical, and conical.

10. The solar cell as claimed in claim 7, characterized in that, The length of the bottom of the first synaptic structure, the second synaptic structure, and the third synaptic structure is less than 500 nm.

11. The solar cell as claimed in claim 7, characterized in that, The heights of the first synaptic structure, the second synaptic structure, and the third synaptic structure are less than 500 nm.

12. The solar cell according to claim 1, characterized in that, The diameter of the groove is 12 micrometers to 30 micrometers.

13. A photovoltaic module, characterized in that, Including the solar cell as described in any one of claims 1 to 12.

14. A photovoltaic system, characterized in that, Including the photovoltaic module as described in claim 13.

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