Furnace tube device
By using a furnace tube device with a magnetic outer tube and excitation coil to generate a variable magnetic field in the PEALD process, the contradiction between thermal budget and deposition rate is resolved, the film growth rate and coverage uniformity are improved, and the growth of ultrathin continuous films is realized.
Patent Information
- Application Number
- CN202422908233.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-27
- Publication Date
- 2025-11-04
- Estimated Expiration
- 2034-11-27
AI Technical Summary
In the existing PEALD process, it is difficult to balance thermal budget and deposition rate, resulting in a significant impact on the process.
The furnace tube device includes a magnetic outer tube, an excitation coil, and an inner tube. By applying a variable magnetic field in the inner tube to modulate the plasma, the density and activity of plasma active particles are increased, and the heat transfer from high-energy particles to the surface of the target part is reduced.
To improve the film growth rate, reduce the thermal budget, enhance the film coverage uniformity and step coverage, and achieve the regulation of film growth and nucleation mechanisms, ultrathin continuous conformal films can be grown.
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Figure CN223509958U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of semiconductor manufacturing equipment technology, and in particular to a furnace tube device. Background Technology
[0002] In the semiconductor manufacturing field, traditional thermal atomic layer deposition (ALD) processes are completed by heating, where heat is used to drive chemical reactions on the substrate surface. However, these processes have low reactivity and slow reaction rates.
[0003] Typically, energy can be provided to the reaction through auxiliary methods to enhance the ALD reaction. For example, highly active and reactive plasmas can be used to replace traditional co-reactants in the ALD process, a technique known as Plasma Enhanced ALD (PEALD). PEALD is an energy-enhanced atomic layer deposition technique and an effective means of preparing high-quality ultrathin films at low temperatures.
[0004] For batch furnace tube machines, a significant amount of heat is generated during thin film deposition. The total heat received by the wafer is called the thermal budget, and an excessively high thermal budget can adversely affect the process. To reduce the impact of the thermal budget on the process, it is usually necessary to sacrifice deposition temperature or deposition rate. A new device is needed to address the conflict between thermal budget and deposition rate in the PEALD process. Utility Model Content
[0005] In view of the shortcomings of the prior art described above, the purpose of this application is to provide a furnace tube device to solve the problem that the thermal budget and deposition rate of the PEALD process cannot be simultaneously achieved in the prior art.
[0006] This application provides a furnace tube device, including a magnetic outer tube, an excitation coil, and an inner tube. The magnetic outer tube includes a chamber capable of accommodating the inner tube. The inner tube is disposed within the chamber, and the bottom of the inner tube includes an opening for a target component to enter or exit. The excitation coil is wound around the outer wall of the chamber to generate a variable magnetic field.
[0007] In some embodiments, the magnetic outer tube further includes a magnetic boot, which is connected to the chamber in a U-shape; the magnetic boot includes a first end, a second end, and a magnetic boot body, the first end is fixedly connected to a first end of the chamber, the second end is pivotally connected to the magnetic boot body, and the second end is movably connected to a second end of the chamber.
[0008] In some embodiments, a cap is provided at the second end, the cap is adapted to the second end port of the chamber, and the cap covers the opening at the bottom of the inner tube to close the inner tube to form a sealed reaction space; the cap simultaneously closes or opens the chamber and the inner tube space for the entry and exit of the target component; the magnetic shoe is connected to the chamber in a closed loop to establish a closed magnetic field.
[0009] In some embodiments, the pivotable connection is horizontally rotatable with the connection point between the magnetic boot body and the second end as the axis.
[0010] In some embodiments, the magnetic boot is a solid structure.
[0011] In some embodiments, the excitation coil is formed by winding insulated wire.
[0012] In some embodiments, the insulated wire is made of copper, aluminum, or nickel.
[0013] In some embodiments, a crystal boat is also included, which enters and exits the inner tube through a port at the bottom of the inner tube, and the crystal boat is used to carry the target component.
[0014] In some embodiments, an inlet pipe and an outlet pipe are further included; the inlet pipe extends into the inner tube from the bottom of the inner tube and extends along the side wall of the inner tube to the top of the inner tube, for filling the inner tube with the reaction fluid; the outlet pipe is disposed at the bottom of the inner tube, and the reaction fluid after the reaction flows out of the inner tube from the outlet pipe.
[0015] In some embodiments, the magnetic outer tube is made of a highly magnetic material, including a magnet or an iron core.
[0016] In some embodiments, the two ends of the excitation coil are respectively used to connect to the positive and negative terminals of a power supply, and the power supply is an adjustable power supply.
[0017] As described above, the furnace tube device of this application has the following beneficial effects: reducing the thermal budget of the target surface, increasing the thin film growth rate, increasing the step coverage of high aspect ratio thin films, and realizing the control of thin film growth and nucleation mechanism, as well as the growth of ultrathin, continuous, and conformal thin films. Attached Figure Description
[0018] The following accompanying drawings describe in detail the exemplary embodiments disclosed in this application. The same reference numerals denote similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting and exemplary, and the drawings are for illustrative purposes only and are not intended to limit the scope of this application. Other embodiments may similarly fulfill the inventive intent of this application. It should be understood that the drawings are not drawn to scale.
[0019] in:
[0020] Figure 1 This is a front cross-sectional view of a furnace tube assembly according to some embodiments of this application;
[0021] Figure 2 This is a schematic diagram of the magnetic field distribution within a furnace tube device according to some embodiments of this application;
[0022] Figure 3 These are schematic diagrams of magnetic boots according to some embodiments of this application;
[0023] Figure 4 This is a schematic diagram of the trajectory of a charged particle in a magnetic field, according to some embodiments of this application;
[0024] Figure 5(a) is a schematic diagram of the trajectory of charged particles in a plasma without an applied magnetic field, according to some embodiments;
[0025] Figure 5(b) is a schematic diagram of the trajectory of charged particles in a plasma when a magnetic field is applied, according to some embodiments of this application;
[0026] Figure 6(a) is a schematic diagram of thin film coverage by conventional atomic layer deposition according to some embodiments;
[0027] Figure 6(b) is a schematic diagram of thin film coverage by magnetic field-modulated plasma-enhanced atomic layer deposition according to some embodiments of this application;
[0028] Figure 7 The above diagram shows the simulation results of the magnetic flux density of the furnace tube device according to some embodiments of this application. Detailed Implementation
[0029] The following description provides specific application scenarios and requirements for this application, intended to enable those skilled in the art to make and use the content of this application. Various partial modifications to the disclosed embodiments will be apparent to those skilled in the art, and the general principles defined herein can be applied to other embodiments and applications without departing from the spirit and scope of this application. Therefore, this application is not limited to the embodiments shown, but rather to the widest scope consistent with the claims.
[0030] If, during the half-reaction phase of a plasma pulse, an adjustable magnetic field of magnitude and direction is applied to the substrate surface of a batch PEALD device—a process known as batch magnetic field modulated PEALD (M-PEALD)—the Lorentz force exerted by the magnetic field on charged particles increases the number of charged particles (electrons or positive ions). This increases the collision frequency between charged particles, or between charged particles and neutral atoms / molecules / free radicals. When charged particles collide with ions or free radicals, they have a certain probability of exciting electrons from the outer shell of the ions or free radicals, causing ionization of the ions or excitation of the free radicals, thus enhancing their activity. When charged particles collide with gas atoms / molecules, they have a certain probability of ionizing the gas atoms / molecules, generating positive ions and secondary electrons, thereby increasing the density and activity of active particles in the plasma. Furthermore, the energy of charged particles reaching the target surface after multiple collisions is greatly consumed, significantly reducing heat transfer from high-energy ions to the target surface, lowering the thermal budget, and preventing excessive substrate temperature rise.
[0031] Therefore, this application provides a furnace tube device for atomic layer deposition (PEALD) processes. The furnace tube device includes a magnetically conductive outer tube, an excitation coil, and an inner tube. The magnetically conductive outer tube includes a chamber capable of accommodating the inner tube, which is disposed within the chamber. The bottom of the inner tube includes an opening for the target component to enter or exit. The excitation coil is wound around the outer wall of the chamber to generate a variable magnetic field. This furnace tube device adds magnetic field modulation to the plasma-enhanced atomic layer deposition (PEALD) process. By utilizing the Lorentz force exerted by the magnetic field on charged particles, the activity and density of active particles in the plasma can be increased, thereby improving the thin film growth rate.
[0032] The technical solution of this application will be described in detail below with reference to the embodiments and accompanying drawings.
[0033] refer to Figure 1 The schematic diagram of the front cross-section of the furnace tube assembly shown illustrates that, in some embodiments, the furnace tube assembly 100 includes a magnetic field component 1 and an inner tube 2. The magnetic field component 1 includes a magnetically conductive outer tube 11 and an excitation coil 12; that is, the furnace tube assembly 100 includes a magnetically conductive outer tube 11, an excitation coil 12, and an inner tube 2. The magnetically conductive outer tube 11 includes a chamber 111 capable of accommodating the inner tube 2, which is disposed within the chamber 111. The bottom of the inner tube includes an opening for a target component to enter or exit, such as a wafer to be processed loaded in a crystal boat. The excitation coil 12 is wound around the outer wall of the chamber 111 to generate a variable magnetic field. The two ends of the excitation coil 12 are respectively connected to the positive and negative terminals of a power supply 13. The power supply 13 is an adjustable power supply; by adjusting the power supply, the excitation coil 12 generates a variable magnetic field.
[0034] In the plasma-enhanced atomic layer deposition (PEALD) process, the relevant physical and chemical reactions are carried out within the inner tube 2 of the furnace tube assembly 100. The inner tube 2 is disposed within a chamber 111, and an excitation coil 12 is wound around the outer wall of the chamber 111. When current passes through the excitation coil 12, the generated magnetic field forms a strong magnetic field region within the chamber 111 and the inner tube 2. The chamber 111 enhances the magnetic field generated by the excitation coil 12, making the magnetic field more concentrated and effective. In some embodiments, the excitation coil 12 only needs to generate a uniform magnetic field within the inner tube 2. Preferably, the chamber 111 of the magnetically conductive outer tube 11 is disposed outside the inner tube 2, which prevents particulate contamination and facilitates the manufacture of the furnace tube assembly 100.
[0035] In some embodiments, the excitation coil 12 is formed by winding insulated wire, which may be made of copper, aluminum or nickel.
[0036] In some embodiments, the power supply 13 is an adjustable power supply. The magnitude and direction of the magnetic field generated by the excitation coil 12 are controlled by adjusting the output current of the power supply 13. The current and the number of turns of the excitation coil 12 can ensure that the magnetic field strength inside the chamber 111 meets the process requirements, typically less than 1 Tesla.
[0037] In some embodiments, the magnetic outer tube 11 is made of a highly magnetic material, such as a magnet or an iron core.
[0038] In some embodiments, the magnetic outer tube 11 further includes a magnetic shoe 112, which is connected to the chamber 111 in a U-shape. The magnetic shoe 112 is a solid structure that serves to fix the chamber 111 and also makes it easy to fix the excitation coil 12. At the same time, the magnetic shoe 112 can improve the magnetic field distribution, making the magnetic field in the chamber 111 more uniform.
[0039] Figure 2 A schematic diagram of the magnetic field distribution inside the furnace tube assembly 100 is shown. The dashed line 18 with arrows is a schematic diagram of the magnetic field lines. The magnetic field inside the chamber 111 and the inner tube 2 is perpendicular to the excitation coil 12 and parallel to the side wall of the inner tube 2.
[0040] refer to Figure 3 The schematic diagram of the magnetic boot shown is combined with Figure 1 In some embodiments, the magnetic boot 112 includes a first end 1121, a second end 1122, and a magnetic boot body 1123. The first end 1121 and the second end 1122 are respectively disposed at both ends of the magnetic boot body 1123. The first end 1121 is fixedly connected to the first end 1111 of the chamber 111; the second end 1122 is pivotally connected to the magnetic boot body 1123 and movably connected to the second end 1112 of the chamber 111.
[0041] Specifically, in some embodiments, the pivotal connection between the magnetic boot body 1123 and the second end 1122 is such that it can rotate horizontally around the connection point between the magnetic boot body 1123 and the second end 1122. The second end 1122 can be removed from the second end 1112 of the chamber 111 to allow the target component 17 to enter and exit the inner tube 2.
[0042] Furthermore, in some embodiments, a cap 11221 is provided at the second end 1122 of the magnetic boot 112. The cap 11221 is adapted to the port of the second end 1112 of the chamber 111, and the cap 11221 also covers the opening at the bottom of the inner tube 2, for sealing the inner tube 2 to form a sealed reaction space. The cap 11221 simultaneously closes or opens the space of the chamber 111 and the inner tube 2, for the entry and exit of the target component 17. The magnetic boot 12 is connected to the chamber 111 in a closed loop to establish a closed magnetic field.
[0043] In some embodiments, the furnace tube assembly 100 further includes a crystal boat 14. The crystal boat 14 enters and exits the inner tube 2 through a port at the bottom of the inner tube 2, and the crystal boat 14 is used to carry the target component 17. In some embodiments, the target component 17 is a wafer.
[0044] In some embodiments, the furnace tube assembly 100 further includes an inlet pipe 15 and an outlet pipe 16. The inlet pipe 15 extends into the inner tube 2 from the bottom and along the side wall of the inner tube 2 to the top of the inner tube 2, for filling the inner tube 2 with the reaction fluid. The outlet pipe 16 is disposed at the bottom of the inner tube 2, and the reaction fluid after the reaction flows out of the inner tube 2 from the outlet pipe 16.
[0045] In some embodiments, the inlet pipe 15 is provided with uniformly spaced outlet holes (not shown) so that the reaction fluid can uniformly reach the target 17 on the crystal boat 14. Since the target 17 is placed horizontally in the slot of the crystal boat 14, the reaction fluid flowing out from the outlet holes enters and diffuses the space between the target 17 in a horizontal direction, which is beneficial to the full process reaction.
[0046] In some embodiments, the furnace tube assembly 100 further includes an outer tube (not shown) for further controlling and regulating the temperature inside the inner tube 2, providing corresponding temperature conditions for different process flows.
[0047] refer to Figure 4 The diagram shows the trajectory of a charged particle in a magnetic field. When the charged particle moves in magnetic field B, it will be subject to the Lorentz force. in Let be the velocity of the charged particle, and q be the charge of the charged particle. Let B be the magnetic field strength, and m be the mass of the charged particle. Assuming the magnetic field B is in the opposite direction to the Z-axis, the velocity of the charged particle is decomposed into a horizontal component v. / / and vertical component v ⊥Then there is Lorentz force on a charged particle in a plane Direction: Perpendicular to magnetic fields B and v ⊥ The plane in which it lies. In general, the Lorentz force can only change the direction of motion of a charged particle in a plane perpendicular to the magnetic field B, but cannot change its velocity; that is, it provides the centripetal force for the charged particle to move in a circular motion. Thus, the charged particle moves in uniform rectilinear motion along the direction of the magnetic field while simultaneously moving in uniform circular motion around the magnetic field lines (called Rameau motion). Figure 4 In the diagram, trajectory 21 is a schematic diagram of the electron's trajectory, and trajectory 22 is a schematic diagram of the ion's trajectory. Assume the radius of the orbit of the charged particle undergoing uniform circular motion is... The centripetal acceleration produced by the Lorentz force should be: The radius of Rameau's motion is called the angular frequency of Rameau's motion. angular frequency ω c This indicates the speed at which a charged particle rotates. Clearly, for a given type of charged particle, the angular frequency ω... c It is only related to the magnetic field B. Since the mass of an electron is much smaller than the mass of an ion, it can be known that... ω c电子 >ω c离子 As shown in the above formula, ions rotate slowly around magnetic field B with a slightly larger radius; electrons rotate rapidly around magnetic field B with a very small radius. When the magnetic field B is strengthened, charged particles will rotate faster with even smaller trajectories. In plasma, the magnetic field has a much greater effect on electrons than on ions.
[0048] Taking NH3 (ammonia) plasma as an example, NH3 (ammonia) plasma consists of NH3 molecules, N (nitrogen) / H (hydrogen) atoms, and free radicals. ion It is composed of electrons (e-), etc. Referring to Figure 5(a) showing the trajectory of charged particles without a magnetic field and Figure 5(b) showing the trajectory of charged particles with a magnetic field, NH3 plasma undergoes random thermal motion on the surface of wafer 30 without a magnetic field; after a magnetic field is applied, under the influence of the magnetic field, the charged particles... The actual distance traveled per unit of advance increases, and the charged particles... The frequency of collisions with charged particles or charged particles with neutral atoms / molecules / free radicals will increase. Electrons (e-) or If with or Collisions will trigger a certain probability. or The outer electrons make Ionization Or make Activation (excitation) enhances activity. Electron (e-) or If it collides with gas atoms / molecules, it will cause the gas atoms / molecules to ionize with a certain probability, producing positive ions. The plasma generates secondary electrons (e-), thereby increasing the density and activity of active particles in the plasma. Secondly, the energy of charged particles that reach the surface of wafer 30 after multiple collisions has been greatly consumed, significantly reducing the thermal budget of high-energy particles on the surface of wafer 30 and preventing excessive rise in substrate temperature.
[0049] For traditional ALD or PEALD, due to various physical and chemical reasons, it takes multiple cycles to grow a complete ALD film. The probability that the active sites on the substrate surface are adsorbed by precursor molecules in each cycle is called the growth rate. Applying a magnetic field increases the density and activity of active particles in the plasma, thereby improving the coverage per cycle, i.e., increasing the film growth rate, and also improving the step coverage of aspect ratio pattern films. Referring to Figures 6(a) and 6(b), Figure 6(a) is a schematic diagram of film coverage for conventional ALD; Figure 6(b) is a schematic diagram of film coverage for magnetic field-modulated plasma-enhanced ALD (M-PEALD). It can be seen that the film grown after applying the magnetic field is more uniform and complete, and ultrathin continuous films can be grown with thicknesses controlled at the atomic level.
[0050] The energy of charged particles that reach the surface of the target component after multiple collisions has been greatly consumed, which can greatly reduce the thermal burden of high-energy particles on the surface of the target component and prevent the substrate temperature from rising excessively.
[0051] When the precursor is chemically adsorbed on the surface of the target component, the energy barrier required for the chemical reaction needs to be overcome. The magnetic field increases the density and activity of active particles in the plasma, and the surface reaction can be driven without very high temperatures. This can reduce the growth temperature and produce thin films with lower impurity content, higher density, and better electrochemical performance.
[0052] In some embodiments, the diameter of the chamber 111 is set to 460 mm, the current of the excitation coil 12 is 10 A, and the number of turns of the excitation coil 12 is 1000. Simulation results show that the magnetic flux density is high inside the solid magnetic shoe 112, and relatively low inside the chamber 111; the direction of the magnetic field can be controlled by varying the direction of the applied current. (Reference) Figure 7As shown, the horizontal axis represents different height positions within the cavity, and the vertical axis represents magnetic flux density. Within a height range of 1300 mm, the magnetic flux density is between 8.3 and 8.4 mT. Magnetic flux density deviation = (maximum value - minimum value) / maximum value, i.e. Approximately 0.4%. As can be seen from the figure, the magnetic flux density in the furnace tube device 100, chamber 111 and inner tube 2 shown in the embodiment of this application has excellent uniformity, and the deviation can reach within about 0.4%.
[0053] It should be noted that the furnace tube device 100 of this application embodiment is applicable to thin films grown using the ALD method, including but not limited to the following growth materials: front-end process includes: SiN (silicon nitride), oxide; SiOCN (silicon oxycarbonitrile); mid-stage process includes: HfO2 (hafnium dioxide), TiN (titanium nitride), TaN (tantalum nitride); back-end process includes: TiO (titanium oxide), etc.
[0054] The beneficial effects that the embodiments of this application may bring include, but are not limited to: the furnace tube device 100 of this application utilizes the effect of the Lorentz force of the magnetic field on charged particles to increase the activity and density of active particles in the plasma, improve the thin film growth rate, reduce the thermal budget of the target surface, improve the step coverage of the high aspect ratio thin film, and realize the regulation of thin film growth and nucleation mechanism, as well as the growth of ultrathin, continuous, and conformal thin films.
[0055] It should be noted that different embodiments may produce different beneficial effects. In different embodiments, the beneficial effects may be any one or a combination of the above, or any other possible beneficial effects.
[0056] The basic concepts have been described above. Obviously, for those skilled in the art, the detailed disclosure above is merely illustrative and does not constitute a limitation of this specification. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements, and corrections to this application. Such modifications, improvements, and corrections are suggested in this specification, and therefore remain within the spirit and scope of the exemplary embodiments of this application.
[0057] It should be noted that, in the description of this application, unless otherwise expressly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; a mechanical connection or an electrical connection; a rotating connection or a sliding connection; a direct connection or an indirect connection through an intermediate medium; or the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this application in light of the specific circumstances.
[0058] Furthermore, when the terms "first," "second," "third," etc., are used in this application specification to describe various features, these terms are only used to distinguish these features and should not be construed as indicating or implying the correlation or relative importance between features or implicitly indicating the number of features indicated.
[0059] In addition, this application specification describes exemplary embodiments by referring to idealized exemplary cross-sectional views and / or plan views and / or perspective views. Therefore, differences from the illustrated shapes are foreseeable due to factors such as manufacturing techniques and / or tolerances. Therefore, exemplary embodiments should not be construed as limited to the shapes of the regions shown herein, but should include deviations in shape caused, for example, by manufacturing processes. Thus, the regions shown in the figures are substantially schematic, and their shapes are not intended to illustrate the actual shapes of the regions of the device, nor to limit the scope of the exemplary embodiments.
[0060] Furthermore, this application uses specific terms to describe embodiments of this specification. For example, "an embodiment," "one embodiment," and / or "some embodiments" refer to a particular feature, structure, or characteristic related to at least one embodiment of this application. Therefore, it should be emphasized and noted that "an embodiment," "one embodiment," or "an alternative embodiment" mentioned twice or more in different locations in this application do not necessarily refer to the same embodiment. In addition, certain features, structures, or characteristics in one or more embodiments of this application can be appropriately combined.
[0061] Similarly, it should be noted that, in order to simplify the description of the present application and thus aid in the understanding of one or more embodiments of the invention, the foregoing description of the embodiments of the present application sometimes combines multiple features into a single embodiment, drawing, or description thereof. However, this disclosure method does not imply that the subject matter of the application requires more features than those mentioned in the claims. In fact, the embodiments contain fewer features than all the features of the single embodiments disclosed above.
[0062] Finally, it should be understood that the embodiments described in this application are merely illustrative of the principles of the embodiments of this application. Other modifications may also fall within the scope of this application. Therefore, alternative configurations of the embodiments of this application are considered as examples and not limitations, and are regarded as consistent with the teachings of this application. Accordingly, the embodiments of this application are not limited to the embodiments explicitly described and illustrated in this application.
Claims
1. A furnace tube device, characterized in that, The device includes a magnetic outer tube, an excitation coil, and an inner tube. The magnetic outer tube includes a cavity capable of accommodating the inner tube, which is disposed within the cavity. The bottom of the inner tube includes an opening for a target component to enter or exit. The excitation coil is wound around the outer wall of the cavity to generate a variable magnetic field. The magnetic outer tube also includes a magnetic shoe, which is connected to the cavity in a U-shape. The magnetic shoe includes a first end, a second end, and a magnetic shoe body. The first end is fixedly connected to a first end of the cavity, the second end is pivotally connected to the magnetic shoe body, and the second end is movably connected to a second end of the cavity.
2. The furnace tube device according to claim 1, characterized in that, The second end is provided with a cap, which is adapted to the second end port of the chamber and covers the opening at the bottom of the inner tube to close the inner tube and form a sealed reaction space; the cap can simultaneously close or open the chamber and the inner tube space for the target to enter and exit; the magnetic shoe is connected to the chamber in a closed loop to establish a closed magnetic field.
3. The furnace tube device according to claim 1, characterized in that, The pivotable connection is horizontally rotatable with the connection point between the magnetic boot body and the second end as the axis.
4. The furnace tube device according to claim 1, characterized in that, The magnetic boot is a solid structure.
5. The furnace tube device according to claim 1, characterized in that, It also includes a crystal boat, which enters and exits the inner tube through a port at the bottom of the inner tube, and the crystal boat is used to carry the target component.
6. The furnace tube device according to claim 1, characterized in that, It also includes an inlet pipe and an outlet pipe; the inlet pipe extends into the inner tube from the bottom of the inner tube and extends along the side wall of the inner tube to the top of the inner tube, for filling the inner tube with the reaction fluid; the outlet pipe is located at the bottom of the inner tube, and the reaction fluid after the reaction flows out of the inner tube from the outlet pipe.
7. The furnace tube device according to claim 1, characterized in that, The material of the magnetic outer tube includes a magnet or an iron core.
8. The furnace tube device according to claim 1, characterized in that, The two ends of the excitation coil are used to connect to the positive and negative terminals of a power supply, which is an adjustable power supply.