Deposition equipment with electromagnetic shielding function

Abstract

Deposition equipment with an electromagnetic shielding function comprises a reaction cavity, a spray header, a first electrode, a bearing part, a heating element, a second electrode, a plasma source and an electromagnetic shielding element, the reaction cavity comprises a body and a processing space, the spray header and the first electrode are arranged above the processing space, and the first electrode is arranged above the body. The bearing part is arranged below the processing space and is used for bearing a substrate, the heating element is configured to heat the substrate, a circuit of the heating element is electrically connected to a power source, the second electrode is arranged below the processing space, and the electromagnetic shielding element is adjacent to the heating element to shield a signal from the plasma source. The electromagnetic shielding element is provided with a net-shaped structure which is parallel to the bearing plane, and the electromagnetic shielding element is connected to the ground.

Description

Technical Field

[0001] This utility model relates to a deposition device, and more particularly to a deposition device with electromagnetic shielding function. Background Technology

[0002] Deposition equipment and technologies play a crucial role in the semiconductor and advanced manufacturing industries, especially chemical vapor deposition (CVD) and atomic layer deposition (ALD) technologies. These deposition techniques can grow thin films on substrates with excellent thickness control and uniformity, and can be used to fabricate the complex structures required for microelectronic and nanoelectronic components.

[0003] CVD (Chemical Vapor Deposition) is one of the most common thin film deposition methods. Its working principle involves introducing reactive gases into a reaction chamber, where thermal energy or plasma is used to decompose the gases and deposit them onto a substrate to form a thin film. CVD is suitable for depositing a variety of materials, including metals, oxides, and nitrides, and is therefore widely used in integrated circuits (ICs), solar cells, displays, and other components. The advantages of CVD include high deposition rates, high film density, and excellent uniformity.

[0004] Alternating Layer Deposition (ALD) is another high-precision thin-film deposition technology that deposits only a single layer of atoms per deposition. ALD typically consists of two main stages: adsorption and reaction. In the adsorption stage, reactant molecules adhere to the substrate surface and then undergo a chemical reaction with another reactant to form a stable monolayer film. Due to its monolayer deposition characteristics, ALD can achieve high film uniformity and finer thickness control, making it particularly suitable for submicron and nanometer-scale processes. ALD is currently mainly used in the fabrication of high-k materials, gate dielectric layers, and ultrathin insulating layers.

[0005] Deposition processes often involve the use of radio frequency (RF) power devices and heaters. The RF power device uses an RF electric field to excite gas molecules and generate plasma, facilitating deposition. The heater provides the necessary heat for the deposition reaction; depending on the deposition process, the heating temperature may range from 200°C to 800°C. However, the RF signal from the RF power device may transmit interference signals back to the equipment through the conductive parts of the heater, affecting the process and potentially causing the heater to malfunction. Utility Model Content

[0006] The main purpose of this invention is to solve the problem that conventional deposition equipment is prone to RF signal interference via heating elements.

[0007] To achieve the above objectives, this utility model provides a deposition apparatus with electromagnetic shielding function, comprising a reaction chamber, a spray head, a first electrode, a support portion, a heating element, a second electrode, a plasma source, and an electromagnetic shielding element. The reaction chamber includes a body and a process space formed within the body. The spray head is disposed above the process space, the first electrode is disposed above the process space, the support portion is disposed below the process space and is used to support a substrate to be deposited, the heating element is configured to heat the substrate, a circuit of the heating element is electrically connected to a power source and is powered by the power source to heat the substrate, the second electrode is disposed below the process space relative to the first electrode, the plasma source is coupled to at least one of the first electrode and the second electrode, and the electromagnetic shielding element is disposed adjacent to the heating element to shield signals from the plasma source. The electromagnetic shielding element has a mesh structure disposed parallel to the support plane, and the electromagnetic shielding element is connected to a ground.

[0008] In one embodiment, the support portion includes a platform having a support plane for placing the substrate, and the electromagnetic shielding element is disposed in the platform.

[0009] In one embodiment, the electromagnetic shielding element is embedded in the platform.

[0010] In one embodiment, the electromagnetic shielding element is plate-shaped.

[0011] In one embodiment, the heating element is a resistance heater.

[0012] In one embodiment, the electromagnetic shielding element is disposed above the heating element, and when viewed from above, the projected area of ​​the electromagnetic shielding element is larger than that of the heating element.

[0013] In one embodiment, the electromagnetic shielding element is a metal element. Attached Figure Description

[0014] Figure 1 This is a schematic diagram of the structure of an embodiment of the present utility model;

[0015] Figure 2 This is a top view schematic diagram of an electromagnetic shielding element according to an embodiment of the present invention.

[0016] [Symbol Explanation]

[0017] 1: Deposition equipment

[0018] 10: Reaction Chamber

[0019] 11: Ontology

[0020] 12: Process Space

[0021] 20: Sprayer head

[0022] 21: Gas Source

[0023] 30: Bearing section

[0024] 31: Platform

[0025] 31a: Bearing plane

[0026] 32: Support component

[0027] 40: Heating element

[0028] 41: Power source

[0029] 50: Plasma source

[0030] 51: First electrode

[0031] 52: Second electrode

[0032] 70: Plasma

[0033] 80: Electromagnetic shielding components

[0034] 81: Network structure

[0035] 90: Substrate

[0036] A1: Projected area

[0037] A2: Projected area

[0038] GND: Ground Detailed Implementation

[0039] The terminology used herein is for the purpose of illustrating particular embodiments only and is not intended to limit the invention. Unless the context otherwise indicates, the singular forms “a” and “the” used herein may also include the plural forms.

[0040] The directional terms used herein, such as up, down, left, right, front, back, and their derivatives or synonyms, refer to the orientation of the elements in the accompanying drawings and are not intended to limit the present invention, unless the context clearly states otherwise.

[0041] This invention discloses a deposition apparatus, which can be a chemical vapor deposition (CVD) or atomic layer deposition (ALD) apparatus. Figure 1A deposition apparatus 1 includes a reaction chamber 10, a spray head 20, a support portion 30, a heating element 40, and a pair of electrode assemblies. The following description uses plasma-enhanced atomic layer deposition (PEALD) as an example; therefore, the process apparatus also includes one or more plasma sources 50, such as radio frequency power plasma sources. These plasma sources 50 can also be microwave plasma sources, DC plasma sources, or electron cyclotron resonance (ECR) plasma sources. The process apparatus of this invention can also be other types of deposition apparatus, as long as it includes a heater and a plasma source, it falls within the scope of this invention.

[0042] The reaction chamber 10 includes a body 11 and a process space 12 formed within the body 11. A spray head 20 is disposed above the process space 12 and is connected to one or more gas sources 21 to supply precursors and reactants into the process space 12. A support portion 30 is disposed below the process space 12 and includes a platform 31 and a support member 32. The platform 31 supports a substrate 90 to be deposited.

[0043] The heating element 40 is disposed within the reaction chamber 10 for heating the substrate 90. In this example, the heating element 40 is disposed below a supporting plane 31a that supports the substrate 90, for example, below the platform 31. In other examples, the heating element 40 may also be disposed within the platform 31 or otherwise integrated with the platform 31. The heating element 40 may be a resistance heater, an infrared heater, or a lamp-type heater, etc. In this example, the heating element 40 is a resistance heater, and a circuit of the heating element 40 is electrically connected to a power source 41.

[0044] The electrode assembly includes a first electrode 51 and a second electrode 52. In this example, the first electrode 51 is electrically connected to a radio frequency power plasma source (the plasma source 50), and the second electrode 52 is electrically connected to ground. It is understood that the first electrode 51 may be integrated or combined with the spray head 20 or independently disposed above the process space 12, and the second electrode 52 may be integrated or combined with the platform 31 or independently disposed below the process space 12. The placement and arrangement of the first electrode 51 and the second electrode 52 are acceptable as long as they can generate an electric field in the process space 12 to help form a plasma 70.

[0045] The deposition apparatus 1 also includes an electromagnetic shielding element 80 made of a metal, such as copper. The electromagnetic shielding element 80 is disposed adjacent to the heating element 40 and electrically connected to a ground (GND), and is configured to shield the heating element 40. During the operation of the deposition apparatus 1, in order to generate the plasma 70, the radio frequency power plasma source generates electromagnetic radiation. This electromagnetic radiation will interfere with the circuitry of the heating element 40, which is also in operation. With the electromagnetic shielding element 80, the heating element 40 can be effectively shielded from interference by the electromagnetic radiation from the radio frequency power plasma source.

[0046] In this example, the radio frequency power plasma source is electrically connected to the first electrode 51. The electromagnetic shielding element 80 can be disposed on the heating element 40. For example, the substrate 90 is located on the second electrode 52, and the heating element 40 is located below the second electrode 52. The electromagnetic shielding element 80 is disposed between the second electrode 52 and the heating element 40. In one example, the platform 31 serves as the second electrode 52, or the second electrode 52 is integrated into the platform 31. Both the electromagnetic shielding element 80 and the heating element 40 are disposed within the platform 31. In a top view, the projected area A1 of the electromagnetic shielding element 80 is larger than the projected area A2 of the heating element 40 to achieve a better shielding effect.

[0047] Figure 2 This diagram shows a top view of an electromagnetic shielding element 80 according to an embodiment of the present invention. The electromagnetic shielding element 80 has a mesh structure 81, and as shown... Figure 1 As shown, the electromagnetic shielding element 80 is plate-shaped and is substantially parallel to the bearing plane 31a. In the example where the platform 31 serves as the second electrode 52, the conductivity of the electromagnetic shielding element 80 is greater than that of the platform 31 (the second electrode 52). The platform 31 can be made of a metal, such as aluminum.

[0048] By providing the electromagnetic shielding element 80, the heating element 40 can be protected from the electromagnetic radiation interference of the radio frequency power plasma source, and the radio frequency signal from the radio frequency power plasma source can be shielded, so that the heating element 40 can operate and heat normally.

Claims

1. A deposition device with electromagnetic shielding function, characterized in that, include: A reaction chamber includes a body and a process space formed within the body; A spray head is positioned above one of the process spaces; A first electrode is disposed above the process space; A support portion is disposed below the process space and is used to support a substrate to be deposited; A heating element is configured to heat the substrate, and a circuit of the heating element is electrically connected to a power source and powered by the power source to heat the substrate; A second electrode is disposed below the first electrode in the process space; A plasma source, coupled to at least one of the first electrode and the second electrode; and An electromagnetic shielding element is disposed adjacent to the heating element to shield signals from the plasma source. The electromagnetic shielding element has a mesh structure disposed parallel to the support portion and is connected to a ground.

2. The deposition equipment with electromagnetic shielding function according to claim 1, characterized in that, The support includes a platform having a support plane for placing the substrate, and the electromagnetic shielding element is disposed in the platform.

3. The deposition equipment with electromagnetic shielding function according to claim 2, characterized in that, The electromagnetic shielding element is embedded in the platform.

4. The deposition equipment with electromagnetic shielding function according to claim 1, characterized in that, The electromagnetic shielding element is flat.

5. The deposition equipment with electromagnetic shielding function according to claim 1, characterized in that, The heating element is a resistance heater.

6. The deposition equipment with electromagnetic shielding function according to claim 1, characterized in that, The electromagnetic shielding element is disposed on the heating element, and when viewed from above, the projected area of ​​the electromagnetic shielding element is larger than that of the heating element.

7. The deposition equipment with electromagnetic shielding function according to claim 1, characterized in that, The electromagnetic shielding element is a metal component.

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