High-heat-dissipation packaging structure and semiconductor device

Abstract

The utility model provides a high-heat-dissipation packaging structure and a semiconductor device, and relates to the technical field of semiconductors. The high-heat-dissipation packaging structure comprises a substrate and a chip arranged on the substrate, the side, away from the substrate, of the chip is provided with a cooling fin and a metal sponge, the melting point of the metal sponge is higher than that of the cooling fin, the metal sponge surrounds and wraps the cooling fin, the substrate is further provided with a heat dissipation cover, the chip is covered with the heat dissipation cover, and the heat dissipation cover covers the chip. The surfaces, deviating from the chip, of the cooling fin and the metal sponge are in heat-conducting connection with the inner surface of the cooling cover. According to the high-heat-dissipation packaging structure, the metal sponge is adopted to surround and wrap the cooling fins, the metal sponge can absorb the molten cooling fins so as to prevent the cooling fins from overflowing, the metal sponge absorbing the molten cooling fins still has good heat conduction performance, and therefore the high-heat-dissipation packaging structure can effectively improve the heat dissipation effect of the chip. The high ductility of the metal sponge enables the installation height of the heat dissipation cover to be controlled more easily, and the combination between the metal sponge and the heat dissipation fins is tighter.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of semiconductor, in particular to a high-heat-dissipation packaging structure and a semiconductor device. BACKGROUND

[0002] With the development of microelectronic industry towards light weight, thinness, miniaturization and functional diversification, the traditional wire bonding interconnection technology cannot meet the requirements of high density, and flip chip packaging technology emerges as the times require. In order to meet the high heat dissipation requirement of the chip, the existing flip chip packaging technology needs to paste a heat sink on the surface of the chip away from the substrate after welding the chip on the substrate, and heat press a heat dissipation cover on the potting adhesive of the substrate, and finally realize the connection of the chip, the heat sink and the heat dissipation cover through reflow soldering.

[0003] At present, the heat sink widely used in the industry is indium heat sink, and the melting point of indium heat sink is lower than the temperature of reflow soldering. Therefore, the indium heat sink will melt and flow around the chip during reflow soldering, resulting in a large number of holes between the chip and the heat dissipation cover, and thus reducing the heat dissipation. CONTENT OF THE UTILITY MODEL

[0004] The purpose of the present application is to provide a high-heat-dissipation packaging structure and a semiconductor device which can effectively improve the heat dissipation effect of the chip in view of the deficiencies in the prior art.

[0005] To achieve the above purpose, the technical scheme adopted by the embodiments of the present application is as follows:

[0006] In one aspect of the embodiments of the present application, a high-heat-dissipation packaging structure is provided, comprising: a substrate and a chip disposed on the substrate, the side of the chip away from the substrate being provided with a heat sink and a metal sponge, the melting point of the metal sponge being higher than that of the heat sink, the metal sponge surrounding and wrapping the heat sink, the substrate further being provided with a heat dissipation cover, the heat dissipation cover being arranged outside the chip, and the surfaces of the heat sink and the metal sponge away from the chip being respectively in thermal conductive connection with the inner surface of the heat dissipation cover.

[0007] Optionally, the surface of the metal sponge away from the chip is attached to the inner surface of the heat dissipation cover.

[0008] Optionally, it further comprises a back gold layer, one side of the back gold layer being attached to the surface of the chip away from the substrate, and the opposite side being attached to the heat sink and the metal sponge.

[0009] Optionally, the back gold layer comprises an aluminum layer, a titanium layer, a nickel layer, a vanadium layer and a gold layer which are sequentially stacked on the surface of the chip.

[0010] Optionally, the heat sink is an indium heat sink, and the metal sponge is a copper sponge.

[0011] Optionally, the inner surface of the heat dissipation cover and the surface of the metal sponge are respectively provided with a metal plating layer, and the surface of the heat dissipation fin away from the chip is attached to the metal plating layer.

[0012] Optionally, the end surface of the heat dissipation cover and the surface of the substrate are connected by adhesive connection through potting glue.

[0013] Optionally, the surface of the chip facing the substrate is provided with solder balls, and the chip is welded to the substrate through the solder balls.

[0014] Optionally, the bottom filling glue is filled between the chip and the substrate, and the bottom filling glue wraps the solder balls.

[0015] Another aspect of the embodiments of the present application provides a semiconductor device comprising the high heat dissipation packaging structure according to any one of the above.

[0016] The beneficial effects of the present application include:

[0017] The present application provides a high heat dissipation packaging structure, comprising: a substrate and a chip arranged on the substrate, the side of the chip away from the substrate is provided with a heat dissipation fin and a metal sponge, the melting point of the metal sponge is higher than that of the heat dissipation fin, the metal sponge surrounds and wraps the heat dissipation fin, and a heat dissipation cover is further arranged on the substrate, the heat dissipation cover covers the chip, and the surfaces of the heat dissipation fin and the metal sponge away from the chip are respectively in thermal conductive connection with the inner surface of the heat dissipation cover. The high heat dissipation packaging structure adopts the metal sponge to surround and wrap the heat dissipation fin, the melting point of the metal sponge is higher than that of the heat dissipation fin, when the heat dissipation fin melts at high temperature, the metal sponge can absorb the melted heat dissipation fin, thereby preventing the heat dissipation fin from overflowing and causing a large number of holes between the chip and the heat dissipation cover. The metal sponge that has absorbed the melted heat dissipation fin still has good thermal conductivity, therefore, the high heat dissipation packaging structure can effectively improve the heat dissipation effect of the chip. At the same time, the metal sponge has high ductility, and when the heat dissipation cover is installed, the height of the heat dissipation cover can be adjusted adaptively, so that the installation height of the heat dissipation cover is easier to control, and the combination between the metal sponge and the heat dissipation fin is more compact. BRIEF DESCRIPTION OF DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the following will briefly introduce the drawings needed to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore should not be regarded as a limitation on the scope, and for those skilled in the art, other related drawings can also be obtained without creative labor on the basis of these drawings.

[0019] Figure 1 The structure schematic diagram of the high heat dissipation packaging structure provided by the embodiments of the present application;

[0020] Figure 2 The preparation process schematic diagram of the high heat dissipation packaging structure provided by the embodiments of the present application;

[0021] Figure 3 Fig. 2 is a schematic diagram of a preparation process of the high-heat-dissipation packaging structure according to an embodiment of the present application;

[0022] Figure 4 Fig. 3 is a schematic diagram of a preparation process of the high-heat-dissipation packaging structure according to an embodiment of the present application;

[0023] Figure 5 Fig. 4 is a schematic diagram of a preparation process of the high-heat-dissipation packaging structure according to an embodiment of the present application;

[0024] Figure 6 Fig. 5 is a schematic diagram of a preparation process of the high-heat-dissipation packaging structure according to an embodiment of the present application;

[0025] Figure 7 Fig. 6 is a schematic diagram of a preparation process of the high-heat-dissipation packaging structure according to an embodiment of the present application.

[0026] Fig. 1 is a schematic diagram of a high-heat-dissipation packaging structure according to an embodiment of the present application. DETAILED DESCRIPTION

[0027] In order to make the objectives, technical solutions and advantages of the embodiments of the present application clearer, the following will be combined with the accompanying drawings for a clear and complete description of the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the accompanying drawings can be arranged and designed in various different configurations.

[0028] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the claimed present application, but only represents selected embodiments of the present application. It should be noted that, in the case of no conflict, various features in the embodiments of the present application can be combined with each other, and the combined embodiments are still within the protection scope of the present application.

[0029] It should be noted that: similar reference numerals and letters represent similar items in the following drawings, therefore, once an item is defined in one drawing, it does not need to be further defined and explained in the subsequent drawings.

[0030] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship commonly used when the product of the present application is used, and are only for the convenience of describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application. In addition, the terms "first", "second", "third" and the like are only used to distinguish the description and cannot be understood as indicating or implying relative importance.

[0031] In the description of the present application, it should be noted that unless otherwise explicitly specified and limited, the terms "set", "mount", "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be mechanically connected, or it can be electrically connected; it can be directly connected, or it can be indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0032] An aspect of an embodiment of the present application, please refer to Figure 1 , a high heat dissipation packaging structure 100 is provided, comprising: a substrate 110 and a chip 120 disposed on the substrate 110, the chip 120 is provided with a heat sink 130 and a metal sponge 140 on the side away from the substrate 110, the melting point of the metal sponge 140 is higher than that of the heat sink 130, the metal sponge 140 surrounds and wraps the heat sink 130, and the substrate 110 is further provided with a heat dissipation cover 150, the heat dissipation cover 150 covers the chip 120, and the surfaces of the heat sink 130 and the metal sponge 140 away from the chip 120 are respectively in thermal conductive connection with the inner surface of the heat dissipation cover 150.

[0033] The substrate 110 is provided with the chip 120, one side of the chip 120 is electrically connected with the substrate 110, and the opposite side is provided with the heat sink 130 and the metal sponge 140. The heat sink 130 and the chip 120, and the metal sponge 140 and the chip 120 can be directly attached, or other heat conduction structures can be provided. The metal sponge 140 is in a complete ring shape, and the metal sponge 140 is arranged on the outer side of the heat sink 130 and wraps the heat sink 130. The metal sponge 140 and the heat sink 130 can be directly attached, or other heat conduction structures can be provided.

[0034] The heat dissipation cover 150 covers the chip 120, the heat dissipation sheet 130 and the metal sponge 140, and is connected with the substrate 110, so as to enclose the chip 120, the heat dissipation sheet 130 and the metal sponge 140 between the heat dissipation cover 150 and the substrate 110. The heat dissipation sheet 130 and the heat dissipation cover 150, and the metal sponge 140 and the heat dissipation cover 150 can be directly attached, or other heat conduction structures can be arranged. The heat generated by the chip 120 during operation is transmitted to the heat dissipation cover 150 by the heat dissipation sheet 130 and the metal sponge 140, and then dissipated to the outside by the heat dissipation cover 150.

[0035] The high-heat-dissipation packaging structure 100 described above uses the metal sponge 140 to surround and wrap the heat dissipation sheet 130, and the melting point of the metal sponge 140 is higher than that of the heat dissipation sheet 130. When the heat dissipation sheet 130 melts at high temperature, the metal sponge 140 can absorb the melted heat dissipation sheet 130, thereby preventing the heat dissipation sheet 130 from overflowing and causing a large number of holes between the chip 120 and the heat dissipation cover 150. The metal sponge 140 that has absorbed the melted heat dissipation sheet 130 still has good heat conduction performance, so the high-heat-dissipation packaging structure 100 described above can effectively improve the heat dissipation effect of the chip 120. At the same time, the metal sponge 140 has high ductility, and can be adjusted adaptively according to the height of the heat dissipation cover 150 during installation of the heat dissipation cover 150, so that the installation height of the heat dissipation cover 150 is easier to control, and the combination between the metal sponge 140 and the heat dissipation sheet 130 is more compact.

[0036] Optionally, the heat dissipation sheet 130 is an indium heat dissipation sheet, and the metal sponge 140 is a copper sponge.

[0037] The indium heat dissipation sheet has high thermal conductivity and can effectively conduct heat. At the same time, the indium heat dissipation sheet is soft and has good plasticity, and can closely fit various irregular surfaces, thereby improving the heat conduction efficiency. The indium heat dissipation sheet also has high chemical stability and is not easy to be oxidized, corroded or subjected to other chemical reactions, and can maintain good heat conduction performance for a long time. However, the melting point of the indium heat dissipation sheet is lower than the temperature of reflow soldering, and the indium heat dissipation sheet will melt during reflow soldering of the chip 120, the indium heat dissipation sheet and the heat dissipation cover 150.

[0038] The copper sponge has high thermal conductivity and a melting point higher than the highest temperature of reflow soldering. When the indium heat dissipation sheet overflows in a molten state, the copper sponge can absorb the molten indium heat dissipation sheet, thereby preventing the molten indium heat dissipation sheet from overflowing. The copper sponge can also maintain high heat dissipation effect in the state of mixing the molten indium heat dissipation sheet. In addition, the copper sponge has good ductility, so that the installation height of the heat dissipation cover 150 is easier to control, and the copper sponge can be closely combined with the indium heat dissipation sheet after installation of the heat dissipation cover 150.

[0039] Optionally, the surface of the metal sponge 140 away from the chip 120 is attached to the inner surface of the heat dissipation cover 150.

[0040] In this way, the heat conduction efficiency between the metal sponge 140 and the heat dissipation cover 150 can be improved, and the heat dissipation effect of the chip 120 can be improved.

[0041] Optionally, the inner surface of the heat dissipation cover 150 and the surface of the metal sponge 140 are respectively provided with a metal plating layer 160, and the surface of the heat dissipation fin 130 away from the chip 120 is attached to the metal plating layer 160.

[0042] The metal plating layer 160 can protect the metal sponge 140 from being oxidized, so that the metal sponge 140 can maintain good heat conduction performance for a long time. At the same time, the inner surface of the heat dissipation cover 150 is provided with the metal plating layer 160, which can improve the bonding performance between the heat dissipation cover 150 and the chip 120, thereby improving the heat dissipation effect of the chip 120.

[0043] Optionally, the metal plating layer 160 is a nickel plating layer.

[0044] The outer side of the metal sponge 140 and the inner surface of the heat dissipation cover 150 are plated with nickel, which can play a role in resisting oxidation, corrosion, enhancing hardness and wear resistance, thereby effectively protecting the metal sponge 140 and the heat dissipation cover 150, and improving the heat dissipation effect of the chip 120.

[0045] In order to improve the weldability between the chip 120 and the heat dissipation fin 130, the high-heat-dissipation packaging structure 100 optionally further comprises a back plating layer 170, one side of the back plating layer 170 is attached to the surface of the chip 120 away from the substrate 110, and the opposite side is attached to the heat dissipation fin 130 and the metal sponge 140.

[0046] The chip 120 and the heat dissipation fin 130 are welded through the back plating layer 170, which can improve the reliability of the connection between the two. It can be understood that the material of the back plating layer 170 should be a material that is easily infiltrated with the heat dissipation fin 130.

[0047] Optionally, the back plating layer 170 comprises an aluminum layer, a titanium layer, a nickel layer, a vanadium layer and a gold layer which are sequentially stacked on the surface of the chip 120.

[0048] Optionally, the surface of the chip 120 facing the substrate 110 is provided with a solder ball 121, and the chip 120 is welded and connected to the substrate 110 through the solder ball 121.

[0049] The number of solder balls 121 can be multiple, and multiple solder balls 121 are simultaneously welded and connected to the substrate 110, thereby improving the reliability of the connection between the chip 120 and the substrate 110.

[0050] After the plurality of solder balls 121 are welded to the substrate 110, gaps exist between the solder balls 121. In order to further improve the reliability of the connection between the chip 120 and the substrate 110, optionally, a bottom filling adhesive 180 is filled between the chip 120 and the substrate 110, and the bottom filling adhesive 180 wraps the solder balls 121. The bottom filling adhesive tightly adheres the chip 120, the solder balls 121 and the substrate 110 together.

[0051] Optionally, the end surface of the heat dissipation cover 150 and the surface of the substrate 110 are connected by the adhesive 190. The adhesive 190 is used to bond the heat dissipation cover 150 and the substrate 110 together, which is simple and convenient to operate.

[0052] The preparation process of the high heat dissipation packaging structure 100 is as follows: please refer to Figures 2 to 7 The metal sponge 140 is welded to the inner surface of the heat dissipation cover 150; a metal plating layer 160 is laid on the outer surface of the metal sponge 140 and the inner surface of the heat dissipation cover 150 by physical vapor deposition or electroplating process; the chip 120 is attached to the substrate 110, the chip 120 is welded to the substrate 110 by reflow soldering process, and then the bottom filling adhesive 180 is used for bottom filling; the surface of the chip 120 away from the substrate 110 is subjected to metallization treatment by physical vapor deposition process, and the layers of aluminum, titanium, nickel, vanadium and gold (other metal combinations with the same effect can also be used) are sputtered in turn from bottom to top to obtain the back gold layer 170; the heat dissipation fin 130 is attached to the surface of the back gold layer 170 away from the chip 120; a circle of the adhesive 190 is drawn on the edge of the substrate 110; the heat dissipation cover 150 is hot-pressed onto the adhesive 190 on the substrate 110, and the reflow soldering process is used to realize the welding connection of the chip 120, the heat dissipation fin 130 and the heat dissipation cover 150. Thus, the high heat dissipation packaging structure 100 as shown in Figure 1 is obtained.

[0053] The embodiment also provides a semiconductor device comprising the high heat dissipation packaging structure 100 according to any one of the above.

[0054] The semiconductor device comprises the same structure and advantages as the high heat dissipation packaging structure 100 in the foregoing embodiments. The structure and advantages of the high heat dissipation packaging structure 100 have been described in detail in the foregoing embodiments, which will not be repeated here.

[0055] The above only describes the preferred embodiments of the present application and is not intended to limit the present application. Those skilled in the art can make various modifications and changes to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A high heat dissipation package structure, characterized in that, The application relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure.

2. The high heat dissipation package structure of claim 1, wherein, The application also relates to a high-heat-dissipation packaging structure.

3. The high heat dissipation package structure of claim 2, wherein, The application also relates to a high-heat-dissipation packaging structure.

4. The high heat dissipation package structure of claim 1, wherein, The application also relates to a high-heat-dissipation packaging structure.

5. The high heat dissipation package structure of claim 1, wherein, The application also relates to a high-heat-dissipation packaging structure.

6. The high heat dissipation package structure of claim 1, wherein, The application also relates to a high-heat-dissipation packaging structure.

7. The high heat dissipation package structure of claim 1, wherein, The application also relates to a high-heat-dissipation packaging structure.

8. The high heat dissipation package structure of claim 7, wherein, The application also relates to a high-heat-dissipation packaging structure.

9. A semiconductor device, characterized by comprising: The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure. The application also relates to a high-heat-dissipation packaging structure.

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