Heat sink structure and semiconductor device with same

Abstract

The utility model provides a heat sink structure and a semiconductor device with the same, and the heat sink structure comprises a base layer, a first heat conduction layer and a second heat conduction layer. The first heat conduction layer and the second heat conduction layer are respectively arranged on two corresponding side surfaces of the base layer; one or more supporting structures are arranged on the surface of the side, facing the outside, of the first heat conduction layer and / or the second heat conduction layer, connecting areas are formed in the supporting structures, and connecting layers used for being connected with external elements are arranged in the connecting areas. By arranging the supporting structure to limit the connecting layer, a user can plan the specific connecting position of the heat conducting layer of the heat sink structure and the external element in advance, so that the specific connecting or welding process of the heat sink structure and the external element is more standard and controllable, the use amount of the connecting layer can be standard in advance, and the production efficiency is improved in the production process. The connection efficiency of the heat sink structure and the external element and the production efficiency of the semiconductor device with the heat sink structure can be effectively improved.

Description

Technical Field

[0001] This utility model relates to the field of heat sinks, specifically to a heat sink structure and a semiconductor device having the same. Background Technology

[0002] A heat sink is a key structure used for heat dissipation. It typically includes a heat dissipation substrate and one or more functional layers, transferring heat from the heat-generating element to the outside through heat conduction, convection, and radiation. When connecting and installing a heat sink to external components, additional solder is often added to the functional layers for welding. For heat sinks with irregular shapes, large areas, or high connection precision requirements, the solder on the surface can easily diffuse or flow on the functional layers in its molten state, contaminating areas that do not require soldering. This affects the accuracy of the heat sink connection, resulting in inconsistent connection quality between different heat sinks, which may ultimately affect the specific heat dissipation performance of the heat sink. Utility Model Content

[0003] This invention addresses the aforementioned deficiencies in the prior art by providing a heat sink structure and a semiconductor device having the same, thereby solving at least one of the aforementioned technical problems.

[0004] In a first aspect, a heat sink structure is proposed, comprising a base layer, a first heat-conducting layer, and a second heat-conducting layer; the first heat-conducting layer and the second heat-conducting layer are respectively disposed on corresponding two sides of the base layer. One or more support structures are disposed on the side of the first heat-conducting layer and / or the second heat-conducting layer facing the outside, and a connection area is formed within the support structure, wherein a connection layer for connecting with external components is disposed within the connection area.

[0005] By setting up a support structure, a connection area can be formed. In practical applications, users can set the shape of the support structure according to the actual situation to further standardize the connection area and the shape of the connection layer within the connection area.

[0006] In some specific embodiments, the thickness of the support structure is less than or equal to the thickness of the connecting layer. By setting the thickness of the support structure to be less than or equal to the thickness of the connecting layer, it is possible to ensure that the entire connecting layer can be connected to the external component when the heat sink structure is connected to the external component.

[0007] In some specific embodiments, the melting point of the support structure is higher than that of the connecting layer. By setting the melting point of the support structure to be higher than that of the connecting layer, the support structure can maintain its shape and continue to provide support when the connecting layer is connected at high temperatures in practical applications. In practical applications, the connecting layer reaches its melting point first and then melts. Due to the interception of the support structure, the melting connecting layer will not overflow from the connection area, allowing it to fit snugly against external components.

[0008] In some specific embodiments, the projection of the support structure onto the first and / or second thermally conductive layer includes rectangles, circles, ellipses, and squares. In practical applications, the projection of the support structure onto the first and / or second thermally conductive layer can be a regular shape or an irregular shape.

[0009] In some specific embodiments, the support structure is disposed along the edge region of the side surface of the first and / or second heat-conducting layers facing outward. In this case, the area of ​​the connection region is at its largest. By providing the support structure, it is possible to prevent the material in the connection layer from melting and flowing outward, and to prevent the material in the connection layer from overflowing into areas outside the heat-conducting layers, thus avoiding impact on locations where a connection layer is not required.

[0010] In some specific embodiments, multiple connection areas are formed on the outer surface of the first and / or second thermally conductive layers. These connection areas may be partially interconnected or independent of each other. Users can set the shape and number of connection areas according to the actual connection locations required. For different shapes of thermally conductive layers and different installation requirements with external components, the distribution of connection areas on the thermally conductive layers can be standardized or irregular.

[0011] It should be noted that this application does not specifically limit the number and distribution of the heat-conducting layers. In practical applications, multiple first heat-conducting layers can be distributed on one side of the substrate, and multiple second heat-conducting layers can be distributed on the other side of the substrate.

[0012] In some specific embodiments, the side of the support structure away from the connecting layer includes an arc-shaped surface. By setting the side of the support structure away from the connecting layer to a convex arc-shaped surface, the connection strength between the support structure and the first or second heat-conducting layer can be enhanced, making the support structure less susceptible to external forces and less prone to wear and tear, thus preventing it from falling off.

[0013] In some embodiments, the connecting layer includes a pre-plated solder layer. In one embodiment, the connecting layer also includes a thermally conductive adhesive with good filling properties, capable of effectively filling the tiny gaps formed between the first or second thermally conductive layer on the heat sink structure and the connection surface of the external component. Simultaneously, due to the support structure, the flowable thermally conductive adhesive is confined within the connection area formed by the support structure, preventing it from overflowing relative to the connection area and contaminating non-connection areas.

[0014] In some embodiments, the pre-plated solder layer includes gold-tin solder. By depositing a pre-plated solder layer in the connection area formed by the support structure, the heat sink structure can be directly connected to external components using this pre-plated solder layer without the need for additional solder later, effectively improving the installation efficiency of the heat sink structure during installation. In one embodiment, the thickness of the pre-plated solder layer is uniform.

[0015] In some specific embodiments, the thermally conductive layer is a conductor layer, the base layer is an insulating layer, and the first thermally conductive layer and / or the second thermally conductive layer includes a copper layer, or an aluminum layer, or a silver layer, or a tungsten layer.

[0016] In some specific embodiments, the substrate includes a silicon carbide layer and / or an aluminum nitride layer.

[0017] Secondly, a semiconductor device is proposed, comprising a heat sink structure according to any of the aforementioned technical solutions. In practical applications, by incorporating the heat sink structure of the aforementioned technical solutions into the semiconductor device, the placement area of ​​the connection layer on the heat-conducting layer of the heat sink structure can be restricted, improving the reliability of the connection between the heat sink structure and the heat-generating element in the semiconductor device. Furthermore, by pre-setting the distribution of the connection area, no additional connection material needs to be added during the connection process. The heat-generating element includes a chip. In the mass production of semiconductor devices, by pre-setting and defining the position of the connection layer, the repeatability and stability of the production process can be improved. It also reduces the risk of damage to surrounding components caused by the connection layer during installation.

[0018] Beneficial effects: This utility model provides a heat sink structure and a semiconductor device having the same. By setting one or more support structures on the outer surface of the heat-conducting layer on the base layer, a connection area is formed within the support structure, and a connection layer for connecting with external components is set within the connection area. This allows users to plan the specific connection positions between the heat-conducting layer on the heat sink structure and the external components in advance through the support structure, making the specific connection or welding process between the heat sink structure and the external components more standardized and controllable. The size, position, and weight of the connection layer can be pre-defined, which can effectively improve the connection efficiency between the heat sink structure and the external components, as well as the production efficiency of the semiconductor device. Attached Figure Description

[0019] To more clearly illustrate the technical solutions of the embodiments of this utility model, the drawings used in the embodiments will be briefly introduced below. It should be understood that the following drawings only show some embodiments of this utility model and should not be regarded as a limitation on the scope. For those skilled in the art, other related drawings can be obtained based on these drawings without creative effort.

[0020] Figure 1 This is a cross-sectional structural diagram of this application;

[0021] Figure 2 This is another cross-sectional structural diagram of this application;

[0022] Figure 3 This is another cross-sectional structural diagram of this application;

[0023] Figure 4 This is another cross-sectional structural diagram of this application;

[0024] Figure 5 This is a three-dimensional structural diagram of the present application.

[0025] The reference numerals in the attached figures are as follows: 1-base layer; 21-first heat-conducting layer; 22-second heat-conducting layer; 3-support structure; 31-connection area; 32-connection layer; 321-pre-plated solder layer. Detailed Implementation

[0026] The following will describe the concept, specific structure and technical effects of this utility model clearly and completely with reference to the embodiments and accompanying drawings, so as to fully understand the purpose, features and effects of this utility model.

[0027] Various embodiments of the present invention will be described more fully below. The present invention may have various embodiments, and adjustments and changes may be made therein. However, it should be understood that there is no intention to limit the various embodiments of the present invention to the specific embodiments disclosed herein, but rather the present invention should be understood to cover all adjustments, equivalents, and / or alternatives falling within the spirit and scope of the various embodiments of the present invention.

[0028] In the following, the terms “comprising” or “may include”, which may be used in various embodiments of the present invention, indicate the presence of the disclosed functions, operations, or elements, and do not limit the addition of one or more functions, operations, or elements. Furthermore, as used in various embodiments of the present invention, the terms “comprising,” “having,” and their cognates are intended only to indicate a specific feature, number, step, operation, element, component, or combination of the foregoing, and should not be construed as primarily excluding the presence of one or more other features, numbers, steps, operations, elements, components, or combinations of the foregoing, or the possibility of adding one or more combinations of features, numbers, steps, operations, elements, components, or combinations of the foregoing.

[0029] In various embodiments of this utility model, the expression "or" or "at least one of A and / or B" includes any combination or all combinations of the words listed simultaneously. For example, the expression "A or B" or "at least one of A and / or B" may include A, may include B, or may include both A and B.

[0030] The terms used in the various embodiments of this utility model (such as "first," "second," etc.) may modify various constituent elements in the various embodiments, but do not limit the corresponding constituent elements. For example, the above terms do not limit the order and / or importance of the elements. The above terms are only used for the purpose of distinguishing one element from other elements. For example, a first user device and a second user device refer to different user devices, although both are user devices. For example, without departing from the scope of the various embodiments of this utility model, a first element may be referred to as a second element, and similarly, a second element may be referred to as a first element.

[0031] It should be noted that, in this utility model, unless otherwise explicitly specified and defined, terms such as "installation," "connection," and "fixation" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this utility model according to the specific circumstances.

[0032] In this utility model, those skilled in the art should understand that the terms indicating orientation or positional relationship in the text are based on the orientation or positional relationship shown in the accompanying drawings, and are only for the convenience of describing this utility model and simplifying the description, and are not intended to indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of this utility model.

[0033] The terminology used in the various embodiments of this invention is for the purpose of describing particular embodiments only and is not intended to limit the various embodiments of this invention. As used herein, the singular form is intended to include the plural form as well, unless the context clearly indicates otherwise. Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which the various embodiments of this invention pertain. The terms (such as those defined in a generally used dictionary) are to be interpreted as having the same meaning as in the context of the relevant technical field and are not to be interpreted as having an idealized or overly formal meaning, unless clearly defined in the various embodiments of this invention.

[0034] Example

[0035] This embodiment provides a heat sink structure and a semiconductor device having the same, the specific solution of which is as follows:

[0036] Firstly, a heat sink structure is proposed, such as... Figure 1and Figure 3 As shown, it includes a base layer 1, a first heat-conducting layer 21, and a second heat-conducting layer 22; the first heat-conducting layer 21 and the second heat-conducting layer 22 are respectively disposed on corresponding two sides of the base layer 1. Among them, one or more support structures 3 are disposed on the side surface of the first heat-conducting layer 21 and / or the second heat-conducting layer 22 facing the outside, and a connection area 31 is formed in the support structure 3, and a connection layer 32 for connecting with external components is disposed in the connection area 31.

[0037] By setting the support structure 3, a connection area 31 can be formed. In practical applications, users can set the shape of the support structure 3 according to the actual situation to further standardize the connection area 31 and the shape of the connection layer 32 within the connection area 31.

[0038] In some specific embodiments, the thickness of the support structure 3 is less than or equal to the thickness of the connecting layer 32. By setting the thickness of the support structure 3 to be less than or equal to the thickness of the connecting layer 32, all of the connecting layers 32 can directly contact and connect with the external components when the heat sink structure is connected to the external components, resulting in a tighter overall connection. The external components will not first come into contact with the support structure 3, nor will gaps be formed between them and the connecting layer 32.

[0039] In some specific embodiments, the melting point of the support structure 3 is higher than that of the connecting layer 32. By setting the melting point of the support structure 3 to be higher than that of the connecting layer 32, the support structure 3 can maintain its shape and continue to provide support when the connecting layer 32 is connected at high temperatures in practical applications. In practical applications, the connecting layer 32 reaches its melting point first and then melts. Due to the interception of the support structure 3, the melting connecting layer 32 will not overflow from the connecting area 31, and can be closely connected to the external components.

[0040] In some specific embodiments, the projection of the support structure 3 onto the first heat-conducting layer 21 and / or the second heat-conducting layer 22 includes a rectangle, a circle, an ellipse, and a square. In practical applications, the projection of the support structure 3 onto the first heat-conducting layer 21 and / or the second heat-conducting layer 22 can be a regular shape or an irregular shape.

[0041] In some specific embodiments, the support structure 3 is disposed along the edge region of the side surface of the first heat-conducting layer 21 and / or the second heat-conducting layer 22 facing the outside. At this time, the area of ​​the connection region 31 is the largest. By providing the support structure 3, it is possible to prevent the material in the connection layer 32 from melting and flowing to the outside in this case, and to prevent the material in the connection layer 32 from overflowing to areas outside the heat-conducting layer, thus affecting the location where the connection layer 32 is not required.

[0042] In some specific embodiments, a plurality of connection regions 31 are formed on the outer surface of the first thermally conductive layer 21 and / or the second thermally conductive layer 22, such as Figure 4 As shown in the cross-sectional diagram, multiple connection areas 31 are provided on the second heat-conducting layer 22. Users can set the shape and number of connection areas 31 according to the actual connection positions required. For heat-conducting layers of different shapes and different installation requirements with external components, the distribution of connection areas 31 on the heat-conducting layer can be standardized, such as uniform distribution; or it can be irregular.

[0043] It should be noted that this application does not specifically limit the number and distribution of the heat-conducting layers. In practical applications, multiple first heat-conducting layers 21 can be distributed on one side of the base layer 1, and multiple second heat-conducting layers 22 can be distributed on the other side of the base layer 1.

[0044] In some specific embodiments, such as Figure 2 As shown, the side of the support structure 3 away from the connecting layer 32 includes an arc-shaped surface. By setting the side of the support structure 3 away from the connecting layer 32 to be an outwardly convex or inwardly concave arc-shaped surface, the connection strength between the support structure 3 and the first heat-conducting layer 21 or the second heat-conducting layer 22 can be enhanced, making the support structure 3 less susceptible to external forces and less prone to wear and tear, thus preventing it from falling off.

[0045] It should be noted that this embodiment does not limit the width of the support structure 3 in the cross-section. In practical applications, users can adjust the width of the support structure 3 in the cross-section according to the actual usage.

[0046] In some specific embodiments, such as Figure 5 As shown in the three-dimensional structural diagram, the connecting layer 32 includes a pre-plated solder layer 321, which may be deposited in the connecting region 31. In one specific embodiment, the connecting layer 32 also includes thermally conductive adhesive, which has good filling properties and can effectively fill the tiny gaps formed between the first thermally conductive layer 21 or the second thermally conductive layer 22 on the heat sink structure and the connection surface of the external component. At the same time, due to the setting of the support structure 3, the thermally conductive adhesive can be confined within the connecting region 31 formed by the support structure 3, so that the thermally conductive adhesive will not overflow relative to the connecting region 31.

[0047] In some specific embodiments, the pre-plated solder layer 321 includes gold-tin solder. By depositing the pre-plated solder layer 321 in the connection area 31 formed by the support structure 3, the heat sink structure can be directly connected to external components using this pre-plated solder layer 321 without the need to add solder later, which can effectively improve the installation efficiency of the heat sink structure during the installation process.

[0048] In some specific embodiments, the thermally conductive layer is a conductor layer, the base layer 1 is an insulating layer, and the first thermally conductive layer 21 and / or the second thermally conductive layer 22 include a copper layer, an aluminum layer, a silver layer, or a tungsten layer.

[0049] In some specific embodiments, the base layer 1 includes a silicon carbide layer and / or an aluminum nitride layer.

[0050] Secondly, a semiconductor device is proposed, including a heat sink structure according to any of the aforementioned technical solutions. In practical applications, by setting the heat sink structure of the aforementioned technical solutions in the semiconductor device, the placement area of ​​the connection layer 32 on the heat-conducting layer of the heat sink structure can be restricted, improving the reliability of the connection between the heat sink structure and external components. Simultaneously, by pre-setting the distribution of the connection area 31, no additional connection material needs to be added during the connection process. In the mass production of semiconductor devices, by pre-setting and defining the position of the connection layer 32, the repeatability and stability of the production process can be improved. Furthermore, the risk of damage to surrounding components caused by the connection layer 32 during installation can be reduced.

[0051] This embodiment provides a heat sink structure and a semiconductor device having the same. By setting one or more support structures on the outer surface of the heat-conducting layer on the base layer, and forming a connection area within the support structure, and setting a connection layer for connecting with external components within the connection area, the user can pre-plan the specific connection positions between the heat-conducting layer on the heat sink structure and the external components by setting support structures at different positions. This makes the specific connection or welding process between the heat sink structure and the external components more standardized and controllable. The size, position, and weight of the connection layer can be pre-defined, eliminating the need for additional connection materials during the connection process, saving production raw materials, and effectively improving the connection efficiency between the heat sink structure and the external components, thereby improving the production efficiency of the semiconductor device.

[0052] The above is a detailed description of the preferred embodiments of the present utility model. However, the present utility model is not limited to the described embodiments. Those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present utility model. All such equivalent modifications or substitutions are included within the scope defined by the claims of this application.

Claims

1. A heat sink structure, characterized in that, It includes a base layer, a first heat-conducting layer, and a second heat-conducting layer; the first heat-conducting layer and the second heat-conducting layer are respectively disposed on corresponding two sides of the base layer; One or more support structures are provided on the outer surface of the first thermal conductive layer and / or the second thermal conductive layer, the support structure having a connection area, and the connection area having a connection layer for connecting with external components.

2. The heat sink structure according to claim 1, characterized in that, The thickness of the support structure is less than or equal to the thickness of the connecting layer.

3. The heat sink structure according to claim 2, characterized in that, The melting point of the support structure is higher than that of the connecting layer.

4. A heat sink structure according to claim 1, characterized in that, The projection of the support structure onto the first and / or second heat-conducting layers includes rectangles, circles, ellipses, and squares.

5. A heat sink structure according to claim 1, characterized in that, The first thermally conductive layer and / or the second thermally conductive layer have a plurality of connection areas formed on the side surface facing the outside.

6. A heat sink structure according to claim 1, characterized in that, The connection layer includes a pre-plated solder layer.

7. A heat sink structure according to claim 6, characterized in that, The pre-plated solder layer includes gold-tin solder.

8. A heat sink structure according to claim 1, characterized in that, The first thermally conductive layer and / or the second thermally conductive layer include a copper layer, or an aluminum layer, or a silver layer, or a tungsten layer.

9. A heat sink structure according to claim 1, characterized in that, The base layer includes a silicon carbide layer and / or an aluminum nitride layer.

10. A semiconductor device, characterized in that, Includes a heat sink structure according to any one of claims 1-9.

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