Electroplating uniformity shielding plate device for photovoltaic crystalline silicon solar cell
By setting anode and cathode shields in the electroplating tank of photovoltaic crystalline silicon solar cells and adjusting the distribution of electric field lines, the problem of uneven electroplating was solved, the uniformity of current density was achieved, and product quality was improved and costs were saved.
Patent Information
- Application Number
- CN202423098085.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-13
- Publication Date
- 2025-11-07
- Estimated Expiration
- 2034-12-13
AI Technical Summary
In existing technologies, copper electroplating equipment has the problem of uneven electroplating in the production of photovoltaic crystalline silicon solar cells, resulting in uneven current density and inconsistent coating thickness, which affects product quality and wastes materials.
A uniform electroplating shielding device for photovoltaic crystalline silicon solar cells is designed. By setting anode and cathode shields in the electroplating tank, the distribution of electric field lines is adjusted to ensure uniform current density. The shields are made of acid and alkali resistant materials. Combined with electric field line through holes and transmission rollers, the electroplating process is optimized.
It improves the uniformity of electroplating, reduces material waste, enhances product quality, reduces energy consumption, and strengthens the current gathering and transmission functions of solar cells.
Smart Images
Figure CN223522710U_ABST
Abstract
Description
TECHNICAL FIELD
[0001] The utility model relates to electroplating shield device technical field especially relates to a kind of for photovoltaic crystalline silicon solar cell's electroplating uniformity shield device. BACKGROUND
[0002] Currently in photovoltaic industry, crystalline silicon solar cell usually uses screen printing equipment to print silver paste, and then forms silver grid metal electrode by sintering to collect photo-generated carriers and export current, this method is the most widely used metallization method of crystalline silicon solar cell at present, and the method is simple in process, is the current mainstream mass production metallization process. With the demand and development of market, the cost control of crystalline silicon solar cell piece, the thinning of cell, the demand of silver reduction and silver removal of silver paste, and the demand of metal grid line refinement of cell piece, copper electroplating equipment is introduced into the production preparation process of solar cell;With this copper grid metal instead of silver grid metal. The uniformity of electroplating in copper electroplating equipment, the control of cost and the quality of product are very important, therefore, a kind of for photovoltaic crystalline silicon solar cell's electroplating uniformity shield device is urgently needed. SUMMARY
[0003] To solve the above technical problems, the utility model aims at providing a kind of for photovoltaic crystalline silicon solar cell's electroplating uniformity shield device. The utility model aims at realizing the following technical scheme:
[0004] Provide a kind of for photovoltaic crystalline silicon solar cell's electroplating uniformity shield device, including electroplating tank, the anode is equipped in the electroplating tank, the upper side of anode is equipped with anode shield, transmission roller and cathode shield in proper order;The inner wall of opposite sides of the electroplating tank is equipped with inclined plate, the anode shield is connected with inclined plate, and the transmission roller is connected with cathode shield.
[0005] Preferably, it further includes cathode, and the cathode is arranged in the electroplating tank. The cathode is connected with the anode by electric field line.
[0006] Among them, anode shield and cathode shield can effectively adjust the uniformity of cell piece surface plating layer. The design of anode shield and cathode shield is mainly based on the principle of electric field distribution. In the electroplating process, electric field is formed from anode to cathode, and electric field line distribution affects current density. Shield can change the direction of electric field line, like setting a "barrier" in electric field. For example, when the shield is located between anode and cathode, it can block part of the electric field lines, so that the electric field lines originally concentrated on the edge of the cathode are dispersed, so that the current density is more evenly distributed on the surface of the cathode.
[0007] In addition, if there is only anode shield without cathode shield, since the anode shield is still apart from the plated cell piece, there is still a situation of edge thickening, so cathode shield needs to be set to play the role of shielding again.
[0008] Preferably, the anode shield and the cathode shield are made of acid and alkali corrosion resistant materials.
[0009] Further, the plating uniformity shield device for photovoltaic crystalline silicon solar cells further comprises a cell sheet, which is located above the cathode shield.
[0010] Preferably, the cell sheet can move along the opposite sides of the cathode shield.
[0011] Further, the anode shield comprises a first shielding area and a first electric field line passing area arranged adjacently.
[0012] Further, the anode shield has a length of 900-1000 mm and a width of 80-90 mm; the first electric field line passing area has a length of 150-190 mm and a width of 30-40 mm.
[0013] Further, the first electric field line passing area is multiple, and the distance between each first electric field line passing area is 60-80 mm.
[0014] Preferably, the first electric field line passing area is 4, the distance between the leftmost first electric field line passing area close to the side of the anode shield and the side edge of the anode shield is 40-50 mm, and the distance between the rightmost first electric field line passing area close to the side of the anode shield and the side edge of the anode shield is 15-25 mm.
[0015] Further, the cathode shield comprises a second shielding area and a second electric field line passing area arranged adjacently.
[0016] Further, the cathode shield has a length of 950-1000 mm and a width of 90-100 mm; the second electric field line passing area has a length of 150-200 mm and a width of 30-40 mm.
[0017] Preferably, the second electric field line passing area is multiple, and the distance between each second electric field line passing area is 70-90 mm.
[0018] Preferably, the second electric field line passing area is 4, the distance between the leftmost second electric field line passing area close to the side of the cathode shield and the side edge of the cathode shield is 45-55 mm, and the distance between the rightmost second electric field line passing area close to the side of the cathode shield and the side edge of the cathode shield is 20-30 mm.
[0019] Further, a plurality of electric field line passing holes are arranged in the first electric field line passing area and the second electric field line passing area.
[0020] Preferably, the second shielding area of the cathode shielding plate is further provided with a transmission roller convex point opening, and the transmission roller convex point opening is arranged outside the second electric field line passing area.
[0021] Preferably, the electric field line passing holes are uniformly distributed in the first electric field line passing area and the second electric field line passing area.
[0022] Further, the cathode shielding plate is composed of a plurality of third shielding areas arranged at intervals.
[0023] Further, the thickness of the anode shielding plate is 5 mm, and the thickness of the cathode shielding plate is 1 mm.
[0024] Compared with the prior art, the beneficial effects are that:
[0025] 1. The uniformity of electroplating is improved. Without the shielding plate, the electric power lines are unevenly distributed, which leads to uneven current density on the surface of the cathode (cell sheet). At the edges, corners and other positions, the electric power lines are concentrated, the current density is large, and the plating layer is thick. In the middle, the electric power lines are less, the current density is small, and the plating layer is thin. The shielding plate can change the distribution of the electric power lines, make the current density on the surface of the cathode more uniform, and make the thickness of the plating layer more uniform.
[0026] 2. The cost can be saved. Because the uniform plating layer can effectively reduce the material waste caused by the local plating layer being too thick, and avoid the situation that the plating layer needs to be electroplated again due to insufficient thickness, thereby reducing the consumption of materials and energy.
[0027] 3. The product quality is improved. The uniform electroplating layer helps to improve the quality of the product, especially for the high aspect ratio of the fine grid line of the cell sheet. At the same time, the performance of the product can be enhanced, such as in the case that the grid line of the cell sheet is good, the uniform plating layer can better play the function of converging and transmitting current. BRIEF DESCRIPTION OF DRAWINGS
[0028] In order to more clearly illustrate the technical scheme in the embodiments of the present application, the drawings needed in the embodiment description will be briefly introduced. Obviously, the drawings in the following description are some embodiments of the present application, and for those skilled in the art, other drawings can also be obtained on the premise of not creating laboriously.
[0029] Figure 1 It is a structure schematic view of the electroplating uniformity shielding plate device for photovoltaic crystalline silicon solar cells of the embodiment 1 and the embodiment 2 of the present application.
[0030] Figure 2 It is a structure schematic view of the anode shielding plate of the embodiment 1 and the embodiment 2 of the present application.
[0031] Figure 3 It is the electric field line distribution schematic view of the embodiment 1 of the utility model;
[0032] Figure 4 It is the structure schematic view of the cathode shield of the embodiment 1 of the utility model;
[0033] Figure 5 It is the movement direction schematic view of the battery piece of the embodiment 1 of the utility model;
[0034] Figure 6 It is the structure schematic view of the cathode shield of the embodiment 2 of the utility model;
[0035] Figure 7 It is the movement direction schematic view of the battery piece of the embodiment 2 of the utility model;
[0036] Figure 8 It is the electric field line distribution schematic view of the comparative example 1 of the utility model;
[0037] Marking explanation in the drawing:
[0038] 1-electroplating tank;2-anode;3-anode shield;4-conveying roller;5-cathode shield;6-battery piece;7-first shielding area;8-first electric field line passing area;9-second shielding area;10-second electric field line passing area;11-electric field line passing hole;12-conveying roller convex point opening;13-third shielding area. DETAILED DESCRIPTION
[0039] The technical scheme in the embodiments of the utility model will be described clearly and completely in conjunction with the drawings in the embodiments of the utility model. Obviously, the described embodiments are part of the embodiments of the utility model, rather than all the embodiments. Based on the embodiments in the utility model, all other embodiments obtained by the person skilled in the art without creative labor fall within the protection scope of the utility model.
[0040] It should be understood that when used in the specification and the appended claims, the terms "comprise" and "include" indicate the existence of the described features, integers, steps, operations, elements, and / or components, but do not exclude one or more other features, integers, steps, operations, elements, components, and / or groups thereof.
[0041] It should also be understood that the terms used in the specification of the utility model herein are only for the purpose of describing specific embodiments and do not intend to limit the utility model. As used in the specification and the appended claims of the utility model, unless the context clearly indicates otherwise, the singular forms "a", "an", and "the" are intended to include the plural forms.
[0042] It should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer" and the like indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the application is usually placed, and are only for the convenience of describing the application and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation on the application.
[0043] The terms "parallel", "vertical" and the like do not mean that the components must be absolutely parallel or vertical, but can be slightly inclined. For example, "parallel" only means that its direction is relatively more parallel than "vertical", and does not mean that the structure must be completely parallel, but can be slightly inclined.
[0044] In the description of the application, it should be noted that unless otherwise specified and limited, the terms "connected", "connected" should be understood broadly, for example, it can be fixedly connected, or it can be detachably connected, or integrally connected; it can be directly connected, or indirectly connected through an intermediate medium, or it can be connected inside two elements. For those skilled in the art, the specific meaning of the above terms in the application can be understood according to the specific circumstances.
[0045] Example 1
[0046] Please refer to 1- Figure 5 The plating uniformity shielding device for photovoltaic crystalline silicon solar cells shown in the figure comprises an electroplating tank 1, an anode 2 is arranged in the electroplating tank 1, an anode shielding plate 3, a transmission roller 4 and a cathode shielding plate 5 are arranged on the upper side of the anode 2 in sequence; inclined plates are arranged on the inner walls of the opposite sides of the electroplating tank 1, the anode shielding plate 3 is connected with the inclined plates, and the transmission roller 4 is connected with the cathode shielding plate 5. Among them, the inclined plates play a fixing role, and the inclined plates and the inner walls of the electroplating tank 1 are detachably connected. It also includes a cathode, which is arranged in the electroplating tank 1. The cathode and the anode 2 are connected through electric field lines. Among them, the anode shielding plate 3 and the cathode shielding plate 5 can effectively adjust the uniformity of the plating layer on the surface of the cell piece 6. In this embodiment, the anode shielding plate 3 and the cathode shielding plate 5 are both made of materials resistant to acid and alkali corrosion. The plating uniformity shielding device for photovoltaic crystalline silicon solar cells further comprises a cell piece 6, which is located above the cathode shielding plate 5, and the electrode piece 6 can move along the opposite sides of the cathode shielding plate 5.
[0047] The anode shield 3 comprises a first shielding area 7 and a first electric field line passing area 8 arranged adjacently. The length of the anode shield 3 is 900-1000mm, and the width is 80-90mm; the length of the first electric field line passing area 8 is 150-190mm, and the width is 30-40mm. In this embodiment, the length of the anode shield 3 is 952mm, and the width is 86mm; the length of the first electric field line passing area 8 is 170mm, and the width is 35mm. The first electric field line passing area 8 is multiple, and the distance between each first electric field line passing area 8 is 60-80mm. In this embodiment, the first electric field line passing area 8 is 4, and the distance between each first electric field line passing area 8 is 69mm. The distance between the leftmost first electric field line passing area 8 and the side of the anode shield 3 is 45mm, and the distance between the rightmost first electric field line passing area 8 and the side of the anode shield 3 is 20mm.
[0048] The cathode shield 5 comprises a second shielding area 9 and a second electric field line passing area 10 arranged adjacently. The length of the cathode shield 5 is 950-1000mm, and the width is 90-100mm; the length of the second electric field line passing area 10 is 150-200mm, and the width is 30-40mm. In this embodiment, the length of the cathode shield 5 is 980mm, and the width is 96mm; the length of the second electric field line passing area 10 is 160mm, and the width is 35mm. The second electric field line passing area 10 is multiple, and the distance between each second electric field line passing area 10 is 70-90mm. In this embodiment, the second electric field line passing area 10 is 4, and the distance between each second electric field line passing area 10 is 80mm. The distance between the leftmost second electric field line passing area 10 and the side of the cathode shield 5 is 50mm, and the distance between the rightmost second electric field line passing area 10 and the side of the cathode shield 5 is 25mm. The first electric field line passing area 8 and the second electric field line passing area 10 are both provided with a plurality of electric field line passing holes 11. The electric field line passing holes 11 are uniformly distributed in the first electric field line passing area 8 and the second electric field line passing area 10. The second shielding area 9 of the cathode shield 5 is also provided with a transmission roller protrusion opening 11, which is arranged outside the second electric field line passing area 10. The transmission roller protrusion opening 11 is used for clamping the transmission roller 4. In this embodiment, the transmission roller protrusion opening 11 is arranged on the upper and lower sides of the second electric field line passing area 10. The thickness of the anode shield 3 is 5mm, and the thickness of the cathode shield 5 is 1mm.
[0049] As Figure 3The electric field line distribution diagram shows that the edge effect of the solar cell 6 is obviously reduced due to the cathode shield 5 and the anode shield 3 of the plating uniformity shield device for the photovoltaic crystalline silicon solar cell. This is because when the plating uniformity shield device for the photovoltaic crystalline silicon solar cell is in operation, the solar cell 6 moves along the opposite sides of the cathode shield 5, and the movement direction of the solar cell 6 is shown in the diagram as Figure 5 As shown, when the solar cell 6 passes directly above the cathode shield 5, the electric field lines will pass through the electric field line passing hole 11 in the cathode shield 5, thereby effectively depositing plating.
[0050] Example 2
[0051] Please refer to Figure 1- Figure 2 、 Figures 6-7 The plating uniformity shield device for the photovoltaic crystalline silicon solar cell includes a plating tank 1, the plating tank 1 is provided with an anode 2, the upper side of the anode 2 is sequentially provided with an anode shield 3, a transmission roller 4 and a cathode shield 5; the inner wall of the opposite sides of the plating tank 1 is provided with an inclined plate, the anode shield 3 is connected with the inclined plate, and the transmission roller 4 is connected with the cathode shield 5. Among them, the inclined plate plays a fixing role, and the inclined plate and the inner wall of the plating tank 1 are detachably connected. It also includes a cathode, which is arranged in the plating tank 1. The cathode and the anode 2 are connected by electric field lines. Among them, the anode shield 3 and the cathode shield 5 can effectively adjust the uniformity of the surface plating layer of the solar cell 6. In this embodiment, the anode shield 3 and the cathode shield 5 are made of materials resistant to acid and alkali corrosion. The plating uniformity shield device for the photovoltaic crystalline silicon solar cell also includes a solar cell 6, which is located above the cathode shield 5, and the electrode piece 6 can move along the opposite sides of the cathode shield 5.
[0052] The anode shield 3 comprises the first shielding area 7 and the first electric field line passing area 8 arranged adjacently. The length of the anode shield 3 is 900-1000mm, and the width is 80-90mm; the length of the first electric field line passing area 8 is 150-190mm, and the width is 30-40mm. In the embodiment, the length of the anode shield 3 is 952mm, and the width is 86mm; the length of the first electric field line passing area 8 is 170mm, and the width is 35mm. The first electric field line passing area 8 is multiple, and the distance between each first electric field line passing area 8 is 60-80mm. In the embodiment, the first electric field line passing area 8 is 4, and the distance between each first electric field line passing area 8 is 69mm. The distance between the leftmost first electric field line passing area 8 close to the side of the anode shield 3 and the side of the anode shield 3 is 45mm, and the distance between the rightmost first electric field line passing area 8 close to the side of the anode shield 3 and the side of the anode shield 3 is 20mm. A plurality of electric field line passing holes 11 are arranged in the first electric field line passing area 8. The electric field line passing holes 11 are uniformly distributed in the first electric field line passing area 8.
[0053] The cathode shield 5 is composed of a plurality of third shielding areas 13 arranged at intervals. Specifically, the number of the third shielding areas 13 is 5. The length of the leftmost third shielding area 13 is 96mm, and the width is 50mm. The length of the rightmost third shielding area 13 is 96mm, and the width is 25mm. The length of the middle three third shielding areas 13 is 96mm, and the width is 80mm. The segmented design of the cathode shield 5 can reduce the influence of the edge effect generated during the electroplating process of the battery piece. The thickness of the anode shield 3 is 5mm, and the thickness of the cathode shield 5 is 1mm.
[0054] When the electroplating uniformity shield device for photovoltaic crystalline silicon solar cells is in operation, the battery piece 6 moves along the opposite sides of the cathode shield 5. The movement direction of the battery piece 6 is shown in Figure 7 When the battery piece 6 passes directly above the cathode shield 5, the battery piece 6 passes between the third shielding areas 13, and the left and right ends of the battery piece 6 are shielded by the third shielding areas 13 from the electric field lines on both sides, thereby reducing the influence of the edge effect.
[0055] Comparative Example 1
[0056] Please refer to the electroplating device shown in Figure 8 Comparative Example 1 and Example 1 are different in that there is no anode shield 3, transmission roller 4 and cathode shield 5 in the electroplating tank 1, and the rest of the conditions are the same. As shown in Figure 8The electric field line distribution diagram shows that the anode 2 of the plating device of the comparative example 1 produces electric field lines when plating the battery sheet 6 without any shielding plate, and the edge of the battery sheet 6 is thicker than the middle, which is the reason why the shielding plate is designed.
[0057] The above merely provides a specific implementation of the present application, but the protection scope of the present application is not limited to this. Any skilled person in the art can easily think of various equivalent modifications or replacements within the technical range disclosed by the present application, and these modifications or replacements should be covered in the protection scope of the present application. Therefore, the protection scope of the present application should be subject to the protection scope of the claims.
Claims
1. An electroplating uniformity mask apparatus for a photovoltaic crystalline silicon solar cell, characterized by, The utility model provides an electroplating device, including electroplating groove, the electroplating groove is equipped with anode in, the upside of anode is equipped with anode baffle, transmission roller and cathode baffle in proper order, the inner wall of the opposite sides of electroplating groove is equipped with inclined plate, anode baffle is connected with inclined plate, transmission roller is connected with cathode baffle.
2. The plating uniformity mask apparatus for photovoltaic crystalline silicon solar cells of claim 1, wherein, Further comprising a battery piece, the battery piece is located above the cathode baffle.
3. The plating uniformity mask apparatus for photovoltaic crystalline silicon solar cells of claim 1, wherein, The anode baffle comprises a first shielding area and a first electric field line passing area arranged adjacently.
4. The plating uniformity mask apparatus for photovoltaic crystalline silicon solar cells of claim 3, wherein, The length of the anode baffle is 900-1000mm, and the width is 80-90mm; the length of the first electric field line passing area is 150-190mm, and the width is 30-40mm.
5. The plating uniformity mask apparatus for photovoltaic crystalline silicon solar cells of claim 4, wherein, The first electric field line passing area is multiple, and the distance between each first electric field line passing area is 60-80mm.
6. The plating uniformity mask apparatus for photovoltaic crystalline silicon solar cells of claim 3, wherein, The cathode baffle comprises a second shielding area and a second electric field line passing area arranged adjacently.
7. The plating uniformity mask apparatus for photovoltaic crystalline silicon solar cells of claim 6, wherein, The length of the cathode baffle is 950-1000mm, and the width is 90-100mm; the length of the second electric field line passing area is 150-200mm, and the width is 30-40mm.
8. The plating uniformity mask apparatus for photovoltaic crystalline silicon solar cells of claim 7, wherein, A plurality of electric field line passing holes are arranged in the first electric field line passing area and the second electric field line passing area.
9. The plating uniformity shield apparatus for photovoltaic crystalline silicon solar cells of claim 3, wherein, The cathode baffle is composed of a plurality of third shielding areas arranged at intervals.
10. The plating uniformity mask apparatus for photovoltaic crystalline silicon solar cells of claim 1, wherein, The thickness of the anode baffle is 5mm, and the thickness of the cathode baffle is 1mm.