Conductive film and battery

Abstract

The utility model discloses a conducting film and a battery, the conducting film comprises a base material layer, a metal conducting layer and a blocking layer, along a first direction, the base material layer comprises a first surface and a second surface; at least two metal conductive layers are arranged on at least one of the first surface and the second surface; the blocking layer is arranged between the two adjacent metal conducting layers, the blocking layer is a structural layer made of a material different from that of the metal conducting layers, and the thickness of the blocking layer is not larger than 10 nm in the first direction. According to the utility model, the problem that the conductivity of the conductive film is reduced under the condition that the conductive film deforms or is stretched to a certain extent is solved.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of thin film production, in particular to a conductive film and a battery. BACKGROUND

[0002] Based on the conductive film-aluminum composite current collector material for lithium ion batteries, the vacuum evaporation plating film method is generally used to realize the rapid deposition of the conductive film. For this purpose, the traditional vacuum evaporation plating film method is to use the vacuum state of the wire feeding evaporation boat to carry out plating. Limited by the single deposition efficiency, the film thickness is small, so it often needs to deposit 20 to 30 times to deposit an aluminum film layer with a thickness of about 1 um. The process of obtaining the conductive film by multiple deposition not only has low production efficiency, but also causes the overall fracture elongation rate of the conductive film to be relatively low due to the multiple plating, the repeated winding of the conductive film roll and other factors. In addition, due to the characteristics of the deposition method, the surface of the evaporation boat is prone to sputtering aluminum, thereby forming concave-convex point defects on the surface of the aluminum conductive film (which is actually the solidification of sputtering aluminum droplets), thereby affecting the mechanical properties of the aluminum conductive film and making it difficult to reflect the advantages of the high elongation rate of the composite current collector in the deformation process of the actual application of the end battery manufacturing.

[0003] In order to improve the production efficiency of the conductive film and improve the elongation rate performance of the film layer, the single film layer deposition is improved by continuously improving the equipment system, and the growth form of the thin film is also changed. For example, the most extreme form in the industry is to use the evaporation boat wire feeding method to deposit a target coating thickness of about 1 um in one pass. Due to the change of the film layer growth method, the important mechanical property of fracture elongation rate is also improved. The fracture elongation rate is the evaluation standard of the maximum limit condition of the conductive film under the condition of being stretched, specifically, the fracture elongation rate is the ratio of the length of the film stretched and deformed to the length of the film in the natural state.

[0004] However, under the production conditions of low-pass thin film forming, the conductive film will be deformed or under certain stretching conditions, the conductive performance of the conductive film will decrease. UTILITY MODEL CONTENT

[0005] The main purpose of the present application is to provide a conductive film and a battery to solve the problem that the conductive film will be deformed or under certain stretching conditions, the conductive performance of the conductive film will decrease.

[0006] According to one aspect of the present application, a conductive film is provided, comprising:

[0007] a substrate layer along a first direction, the substrate layer comprising a first surface and a second surface;

[0008] a metal conductive layer, at least one of the first surface and the second surface is provided with at least two layers of the metal conductive layer;

[0009] a blocking layer, the blocking layer is provided between two adjacent layers of the metal conductive layer, the blocking layer is a structural layer with a material different from that of the metal conductive layer, and the thickness of the blocking layer in the first direction is not greater than 10 nm.

[0010] Further, the blocking layer includes a metal oxide layer.

[0011] Further, the metal oxide layer includes a structural layer with a metal element same as that of the metal conductive layer.

[0012] Further, the metal conductive layer includes:

[0013] a first metal layer, the first metal layer is located at the outermost surface of the conductive film in the first direction;

[0014] a second metal layer, the second metal layer includes one or more layers, one or more layers of the second metal layer is located between the substrate layer and the first metal layer, and the surface of one or more layers of the second metal layer close to the first metal layer is provided with the blocking layer in the first direction;

[0015] wherein, in the first direction, the thickness of the second metal layer is not less than 300 nm.

[0016] Further, in the first direction, the thickness of the second metal layer is not less than 400 nm and not greater than 750 nm.

[0017] Further, the first metal layer is a multi-layer film structure, and the thickness of each layer of the first metal layer in the first direction is not less than 60 nm.

[0018] Further, the first metal layer is a single-layer film structure, and the thickness of the film structure in the first direction is not less than 300 nm and not greater than 750 nm.

[0019] Further, in the first direction, the sum of the thickness of the metal conductive layer on one side of the substrate layer and the thickness of the blocking layer is not less than 750 nm and not greater than 1600 nm.

[0020] Further, the metal conductive layer includes an aluminum layer or a copper layer; and / or,

[0021] The substrate layer comprises at least one of a polypropylene layer, a polyethylene terephthalate layer, a polyethylene layer, a polyamide layer, a polyimide layer, a polyphenylene ether layer, a polyvinyl chloride layer, an ABS plastic layer, a poly-p-phenyleneterephthalamide layer, a polyformaldehyde layer, a polytetrafluoroethylene layer, a polyvinylidene fluoride layer, a polycarbonate layer, a polyvinyl alcohol layer, a polyethylene glycol layer and a cellulose layer; and / or,

[0022] In the first direction, the thickness of the substrate layer is not less than 2um and not more than 12um.

[0023] In another aspect, the application also provides a battery, comprising a pole piece, wherein the pole piece comprises the conductive film.

[0024] In the application, the blocking layer with a material different from the metal conductive layer is arranged between the two adjacent metal conductive layers of the conductive film, and the blocking layer can block the growth of columnar crystals in the thickness direction of the conductive film during the plating of the metal conductive layer, so that a riveting structure can be formed between the metal conductive layer and the blocking layer in the thickness direction of the conductive film, and the tearing resistance of the conductive film at the grain boundary position during stretching is promoted, that is, the tearing resistance of the conductive film is enhanced during the stretching process perpendicular to the thickness direction of the conductive film, which can ensure that the conductive film has good conductive performance under a certain elongation (deformation amount). Moreover, since the thickness of the blocking layer is not more than 10nm, the blocking layer can make each film layer of the conductive film realize the conductive performance along the thickness direction based on the electron tunneling effect, which is not affected. BRIEF DESCRIPTION OF DRAWINGS

[0025] The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiments of the application and serve to explain the application without imposing undue limitation thereon. In the drawings:

[0026] Figure 1 A structure diagram of the conductive film disclosed by the application.

[0027] Among them, the above-mentioned drawings include the following reference signs:

[0028] 10, substrate layer; 11, first surface; 12, second surface; 20, metal conductive layer; 21, first metal layer; 22, second metal layer; 30, blocking layer; 40, adhesion enhancement layer. DETAILED DESCRIPTION

[0029] It should be noted that the embodiments in the application and the features in the embodiments can be combined with each other without conflict. The application will be described in detail below with reference to the drawings and in combination with the embodiments.

[0030] It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and / or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, components, and / or groups thereof, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and / or groups thereof.

[0031] The relative arrangement of parts and steps, numerical expressions, and numerical values set forth in the examples are not intended to limit the scope of the present application unless otherwise specifically stated. It is to be understood that the actual dimensions of the parts shown in the drawings are not necessarily to scale as the dimensions are shown by way of example for convenience and clarity in understanding the example embodiments. Techniques, methods, and apparatus known to those of ordinary skill can not be discussed in detail because they can be readily understood from the disclosure given herein and the skilled artisan would recognize the appropriate application of such techniques, methods, and apparatus to the example embodiments. In all examples shown and discussed herein, any specific values are to be interpreted as merely exemplary and not limiting. Thus, other examples of the example embodiments can have different values. It is to be noted that like numbers and letters refer to like elements throughout the several views of the drawings and as such, detailed discussions of microfabricated structures, devices, and methods will not be repeated in connection with the following text unless specifically requested.

[0032] To solve the problem that the conductive film is deformed or the conductive performance of the conductive film is reduced under certain stretching, the inventor of the utility model finds that under the condition of low-pass thin film forming, due to the sharp increase of single deposition amount, the aluminum atoms collide and agglomerate in the process of transportation and deposition, so that the density of thin film deposition is reduced (there are certain pores in the film), thereby the surface roughness of the conductive film is larger. At the same time, the film layer is rapidly cooled in the direction perpendicular to the surface of the base film after deposition, thereby the columnar growth of the film layer is presented, and if the second deposition of aluminum atoms is carried out on this basis, the film layer will appear more obvious preferred growth under the condition of similar homogenous growth. Further, the original grains on the rough porous surface continue to grow and also present the columnar growth microstructure.

[0033] There is another important performance parameter evaluation in the process of actual conductive film formation and application, that is, the change rate of the electrical performance of the film layer under certain breaking elongation. In the process of testing the electrical performance of the conductive film by using the test method of the electrical performance index, the film is stretched in the direction perpendicular to the thickness of the conductive film, and since the stretching direction is perpendicular to the growth direction of the columnar crystal of the thin film, the film layer is easily torn at the grain boundary of the columnar crystal when the stretching reaches a certain degree, so that the continuity of the film layer in the direction perpendicular to the thickness is hindered, thereby the electrical performance of the conductive film is significantly affected.

[0034] To avoid the conductive film from being caused by the growth of columnar crystals to cause the conductive film to have a certain decline in the conductive performance under deformation or in a certain stretching condition, the first embodiment of the utility model provides a conductive film. As shown in the figure, the conductive film comprises a substrate layer 10, a metal conductive layer 20 and a blocking layer 30. Along the direction indicated by the arrow X shown in the figure, the substrate layer 10 comprises a first surface 11 and a second surface 12. At least one of the first surface 11 and the second surface 12 is provided with at least two metal conductive layers 20, such as only the first surface 11 is provided with at least two metal conductive layers 20, or only the second surface 12 is provided with at least two metal conductive layers 20, or the first surface 11 and the second surface 12 are respectively provided with at least two metal conductive layers 20. The metal conductive layer 20 can be deposited on the substrate layer 10 in the form of evaporation plating film. Figure 1 Figure 1 The first surface 11 and the second surface 12 are provided with at least two metal conductive layers 20. The metal conductive layer 20 can be deposited on the substrate layer 10 in the form of evaporation plating film.

[0035] The blocking layer 30 is arranged between the two adjacent metal conductive layers 20, and the blocking layer 30 is a structural layer with a material different from that of the metal conductive layer 20. Along the first direction, the thickness of the blocking layer 30 is not greater than 10 nm. Since the blocking layer 30 is a structural layer with a material different from that of the metal conductive layer 20, in the process of preparing the metal conductive layer 20 on the substrate layer 10, a heterostructure layer as the blocking layer 30 is inserted between the metal conductive layer 20 and another metal conductive layer 20 in the process of continuously depositing at least two metal conductive layers 20 on the substrate layer 10. If there is no blocking layer 30, another metal conductive layer 20 is continuously deposited on the surface of the last metal conductive layer 20, and columnar crystals are formed in the film layer in the direction perpendicular to the surface of the substrate layer 10 due to the columnar growth phenomenon.

[0036] ​Specifically, in the process of stretching in the direction perpendicular to the thickness direction of the conductive film, since the stretching direction is just perpendicular to the growth direction of the columnar crystal, once the stretching reaches a certain degree, the film layer is easy to tear at the grain boundary of the columnar crystal, so that the continuity of the film layer in the direction perpendicular to the thickness direction is hindered, and the conductive performance of the conductive film is significantly reduced. To this end, the embodiment is to block the growth of the columnar crystal in the thickness direction of the conductive film by the blocking layer 30 of the heterostructure. In the process of continuing to deposit the next metal conductive layer 20 on the surface of the blocking layer 30, the next metal conductive layer 20 will not form a significant columnar crystal by homogenous preferred growth on the surface of the previous metal conductive layer 20, so as to achieve the purpose of inhibiting the growth of the columnar crystal in the thickness direction of the conductive film and forming a riveting structure in the thickness direction. Therefore, in the process of stretching, the blocking layer 30 can improve the anti-tearing ability of the conductive film at the grain boundary position of the columnar crystal, so as to ensure that the conductive film still has good conductive performance under a certain elongation (deformation amount). Specifically, in terms of conductive performance (or electrical performance), the conductive film obtained by the embodiment has a sheet resistance change rate of not more than 5% when stretched by 5% of the length, and the sheet resistance change rate specifically includes one of 5%, 4.5%, 3.5%, 3%, 2%, 1.9%, 1.8%, 1.7%, 1.6%, 1.5%, 1.4%, 1.3%, 1.2%, 1.1%, 1%, 0.8%, 0.5%, or other arbitrary values not more than 5%.

[0037] The resistivity of the conductive film obtained by the embodiment is not more than 4.5×10 -8 Ω·m (ohm·m). The resistivity of the conductive film specifically includes one of 4.5×10 -8 Ω·m, 4.2×10 -8 Ω·m, 4.0×10 -8 Ω·m, 3.8×10 -8 Ω·m, 3.6×10 -8 Ω·m, 3.5×10 -8 Ω·m, 3.2×10 -8 Ω·m, 3.0×10 -8 Ω·m, or other arbitrary values not more than 4.5×10 -8 Ω·m. The surface roughness Rq of the conductive film is not less than 15 nm, and the surface roughness Rq of the conductive film specifically includes one of 15 nm, 16 nm, 18 nm, 21 nm, 25 nm, 30 nm, 33 nm, 36 nm, 40 nm, 42 nm, 43 nm, 45 nm, 47 nm, 48 nm, 49 nm, 50 nm, 52 nm, or other arbitrary values not less than 15 nm.

[0038] Secondly, when the thickness of the blocking layer 30 in the embodiment is not greater than 10 nm, not only the growth of the columnar crystal in the conductive film can be inhibited, but also the conductive performance of the conductive film layer along the thickness direction can be unaffected based on the electron tunneling effect, that is, the thickness direction of the conductive film can also realize the conduction of the current, which guarantees the conductive performance of the conductive film. The electron tunneling effect is a basic phenomenon in quantum mechanics, which refers to the quantum behavior of electrons and other microscopic particles that can penetrate or pass through a potential barrier, although the height of the potential barrier is greater than the total energy of the particles. The thickness of the blocking layer 30 can include one of 10 nm, 9.8 nm, 9.7 nm, 9.5 nm, 9.4 nm, 9.2 nm, 9 nm, 8.9 nm, 8.7 nm, 8.6 nm, 8.4 nm, 8.3 nm, 8.1 nm, 8 nm, 7.9 nm, 7.8 nm, 7.6 nm, 7.5 nm, 7.3 nm, 7.2 nm, 7 nm, 6.8 nm, 6.7 nm, 6.5 nm, 6.4 nm, 6.3 nm, 6.1 nm, 6 nm, 5.9 nm, 5.7 nm, 5.5 nm, 5.3 nm, 5.2 nm, 5 nm, 4.9 nm, 4.7 nm, 4.5 nm, 4.3 nm, 4.1 nm, 4 nm, 3.9 nm, 3.8 nm, 3.6 nm, 3.4 nm, 3.2 nm, 3 nm, etc.

[0039] It can be seen that in the embodiment, the blocking layer 30 with a material different from the metal conductive layer 20 is arranged between the adjacent two metal conductive layers 20 of the conductive film. During the plating of the metal conductive layer 20, the blocking layer 30 can block the growth of the columnar crystal in the thickness direction of the conductive film, so that a riveting structure can be formed between the metal conductive layer 20 and the blocking layer 30 in the thickness direction of the conductive film, which promotes the tearing resistance of the crystal boundary position of the conductive film during stretching, that is, the tearing resistance of the conductive film is enhanced during stretching perpendicular to the thickness direction of the conductive film, which can guarantee the good conductive performance of the conductive film under a certain elongation (deformation amount). Moreover, since the thickness of the blocking layer 30 is not greater than 10 nm, the blocking layer 30 can make the conductive performance of each film layer of the conductive film along the thickness direction unaffected based on the electron tunneling effect.

[0040] The blocking layer 30 in the embodiment can include a metal film layer (such as a copper layer, a nickel layer, a zinc layer, a magnesium layer, a chromium layer, etc.) of a metal material different from that of the metal conductive layer 20. However, in this structure, the material purity of the metal conductive layer 20 can be reduced or even corroded due to the presence of the blocking layer 30, which is not conducive to effective control of the overall structural strength of the conductive film. To this end, the blocking layer 30 in the embodiment can include a metal oxide layer, which specifically can include at least one of an aluminum oxide layer, a silicon oxide layer, a titanium oxide layer, a copper oxide layer, a nickel oxide layer, a chromium oxide layer, a zinc oxide layer, a magnesium oxide layer, a cobalt oxide layer, a zirconium oxide layer, a tin oxide layer, etc. The use of the metal oxide layer as the blocking layer 30 in the embodiment not only has the advantages of easy availability of raw materials and good stability, but also prevents the phenomenon of mutual diffusion of atoms in the metal conductive layer 20 on the opposite sides of the metal oxide layer, which helps to maintain the purity of the material of each film layer. Moreover, the metal oxide layer can also enhance the adhesion between the two adjacent metal conductive layers 20, thereby improving the structural strength of the conductive film, which is particularly important for the multi-layer film structure of the embodiment having at least two metal conductive layers 20 and a blocking layer 30. The metal oxide layer also generally has good thermal stability and can maintain structural stability during high-temperature processes, which helps to improve the reliability of the entire thin film system.

[0041] In a preferred embodiment of the present application, the metal oxide layer includes a structural layer having the same metal element as the metal conductive layer 20. Specifically, when the metal conductive layer 20 includes an aluminum layer, the metal oxide layer is preferably an aluminum layer. Thus, after the aluminum layer is deposited during the same thin film growth process, only the aluminum layer surface is oxidized to form an aluminum oxide layer. Then, the aluminum layer is deposited on the surface of the aluminum oxide layer, and the aluminum layer surface is oxidized to obtain an aluminum oxide layer after the deposition of the subsequent aluminum layer. This process is repeated until the conductive film of the predetermined thickness is plated. That is, the metal oxide layer (such as an aluminum oxide layer) in the embodiment and the metal conductive layer 20 (such as an aluminum layer) in contact with the substrate layer 10 are continuously formed at one time, which is convenient for processing, can inhibit the growth of columnar crystals of the conductive film, and can improve the production efficiency of the conductive film.

[0042] In the embodiment, the total thickness of the metal conductive layer 20 on the single side (i.e., the first surface 11 or the second surface 12) of the substrate layer 10 along the first direction can be generally set to be between 60 nm and 750 nm, such as one of 60 nm, 70 nm, 80 nm, 90 nm, 100 nm, 200 nm, 300 nm, 400 nm, 500 nm, 700 nm, 750 nm, etc.

[0043] For example, the metal conductive layer 20 can include a first metal conductive layer 20a and a second metal conductive layer 20b, and the first metal conductive layer 20a and the second metal conductive layer 20b can be arranged on the first surface 11 and the second surface 12 of the substrate layer 10, respectively. Figure 1As shown, the metal conductive layer 20 includes a first metal layer 21 and a second metal layer 22. The first metal layer 21 is located at the surface of the conductive film along the first direction. The second metal layer 22 includes one or more layers, and the one or more layers of the second metal layer 22 are located between the substrate layer 10 and the first metal layer 21 along the first direction. The surface of the one or more layers of the second metal layer 22 close to the first metal layer 21 is provided with a blocking layer 30, that is, after the second metal layer 22 is plated, the blocking layer 30 is provided on the surface of the second metal layer 22, and then the next layer of the second metal layer 22 or the first metal layer 21 is plated on the surface of the blocking layer 30. Among them, the thickness of the second metal layer 22 along the first direction is not less than 300 nm. The thickness of the second metal layer 22 within the above range can inhibit the growth of columnar crystals in the second metal layer 22 through the blocking layer 30, and can obtain the required conductive film by low-pass deposition, thereby preparing efficiently and ensuring the electrical performance of the conductive film. Specifically, the thickness of the second metal layer 22 includes one of 300 nm, 350 nm, 380 nm, 400 nm, 420 nm, 450 nm, 47 nm, 48 nm, 500 nm, 530 nm, 550 nm, 580 nm, 600 nm, 630 nm, 650 nm, 680 nm, 700 nm, 750 nm, etc.

[0044] Preferably, the thickness of the second metal layer 22 along the first direction is not less than 300 nm and not more than 750 nm. At this time, the thickness of the second metal layer 22 can include one of 300 nm, 320 nm, 350 nm, 370 nm, 390 nm, 400 nm, 420 nm, 450 nm, 47 nm, 48 nm, 500 nm, 530 nm, 550 nm, 580 nm, 600 nm, 630 nm, 650 nm, 680 nm, 700 nm, 750 nm, etc., or any other value between the two end values of 300 nm and 750 nm. When the thickness of the second metal layer 22 is within the above range, the process of the conductive film will be shorter, the preparation efficiency will be higher, and the conductive performance of the conductive film when conducting through the second metal layer 22 and the first metal layer 21 will be ensured.

[0045] The first metal layer 21 in this embodiment is a single layer or a multi-layer film structure. That is, the first metal layer 21 in this embodiment can be a single layer film structure obtained by one-time deposition, or the first metal layer 21 can be a multi-layer film structure obtained by multiple depositions, that is, the first metal layer 21 is a multi-layer film structure in a microstructure, and the whole forms the first metal layer 21. The multi-layer film structure of the first metal layer 21 can be observed by SEM (scanning electron microscope) cross-section test. When the first metal layer 21 is a multi-layer film structure, the thickness of each layer of the first metal layer 21 in the first direction is not less than 60 nm (i.e. the thickness of a single layer of the first metal layer 21 obtained by one-time deposition), and the thickness of each layer of the film structure specifically can include one of 60 nm, 62 nm, 64 nm, 65 nm, 67 nm, 68 nm, 70 nm, 72 nm, 74 nm, 76 nm, 77 nm, 78 nm, 80 nm, etc. When the first metal layer 21 in this embodiment is a multi-layer film structure obtained by multiple depositions, it has the following advantages:

[0046] 1) Reducing defects: Depositing the first metal layer 21 in multiple times can reduce the defect density in a single deposition layer. If the deposition is too thick at one time, it may form holes, cracks or uneven areas. However, depositing in multiple times can give each layer the opportunity to self-repair or cover the defects in the previous layer. In this process, since each layer can fill the gaps in the previous layer, the density and uniformity of the entire conductive film can be improved.

[0047] 2) Optimizing surface roughness: Depositing the first metal layer 21 in multiple times can optimize the surface roughness of the final conductive film by controlling the thickness of each layer.

[0048] 3) Thermal stress management: If high-temperature processing is involved in the deposition process, depositing in multiple times can help manage thermal stress. Depositing thin layers each time can reduce the concentration of thermal stress caused by temperature changes, thereby reducing the risk of film cracking.

[0049] In another aspect, the first metal layer 21 in this embodiment can also be a single layer film structure, and the thickness of the film structure in the first direction is not less than 300 nm and not more than 750 nm, and the thickness of the film structure specifically can include one of 300 nm, 320 nm, 350 nm, 400 nm, 420 nm, 450 nm, 47 nm, 48 nm, 500 nm, 530 nm, 550 nm, 580 nm, 600 nm, 630 nm, 650 nm, 680 nm, 700 nm, 750 nm, or any other value between the two end values of 300 nm and 750 nm. That is, the first metal layer 21 can also be obtained by one-time deposition on the surface of the last barrier layer 30, which is particularly important in engineering applications where the efficiency of the conductive film preparation is emphasized.

[0050] In the first direction, the sum of the thickness of the metal conductive layer 20 and the thickness of the blocking layer 30 on the single side of the substrate layer 10 is not less than 750 nm and not more than 1600 nm, i.e. the sum of the thickness of the metal conductive layer 20 and the thickness of the blocking layer 30 can include one of 750 nm, 760 nm, 770 nm, 790 nm, 800 nm, 810 nm, 830 nm, 850 nm, 870 nm, 890 nm, 900 nm, 920 nm, 950 nm, 980 nm, 1000 nm, 1100 nm, 1200 nm, 1300 nm, 1400 nm, 1500 nm, 1600 nm, etc. The present embodiment obtains a conductive film product with better conductive performance by locating the thickness of the metal conductive layer 20 and the thickness of the blocking layer 30 on the single side of the substrate layer 10 within the above range.

[0051] The metal conductive layer 20 in the present embodiment includes an aluminum layer or a copper layer. When the metal conductive layer 20 includes an aluminum layer, the film layer structure sequentially arranged on the surface of the substrate layer 10 of the conductive film can include an aluminum layer, an aluminum oxide layer, an aluminum layer, or an aluminum layer, an aluminum oxide layer, an aluminum layer, an aluminum oxide layer, an aluminum layer, etc., regardless of the number of aluminum layers, as long as an aluminum oxide layer is arranged between any two adjacent aluminum layers to inhibit the growth of columnar crystals, so that the conductive performance of the conductive film remains at a good level in the case of deformation or under certain tension.

[0052] The substrate layer 10 includes at least one of a polypropylene layer, a polyethylene terephthalate layer, a polyethylene layer, a polyamide layer, a polyimide layer, a polyphenyl ether layer, a polyvinyl chloride layer, an ABS plastic layer, a poly-p-phenyleneterephthalamide layer, a polyformaldehyde layer, a polytetrafluoroethylene layer, a polyvinylidene fluoride layer, a polycarbonate layer, a polyvinyl alcohol layer, a polyethylene glycol layer, and a cellulose layer. In the first direction, the thickness of the substrate layer 10 is not less than 2 um and not more than 12 um, and the thickness of the substrate layer 10 can specifically include one of 2 um, 3 um, 4 um, 5 um, 6 um, 7 um, 8 um, 9 um, 10 um, 11 um, 12 um, etc.

[0053] In addition, the conductive film in the present embodiment further includes an adhesion enhancement layer 40 arranged between the metal conductive layer 20 and the substrate layer 10. The adhesion enhancement layer 40 can improve the adhesion of the metal conductive layer 20 to the substrate layer 10 to improve the stability and firmness of the overall structure of the conductive film. The adhesion enhancement layer 40 in the present embodiment can include any one of a copper alloy layer, a nickel alloy layer, a titanium alloy layer, an aluminum alloy layer, an aluminum oxide layer, a silicon nitride layer, a silicon carbide layer, a polyethylene glycol layer, etc.

[0054] The second embodiment of the utility model further provides a battery, the battery includes an electrode sheet, and the electrode sheet includes a conductive film.

[0055] For ease of description, spatial relative terms, such as "above", "upper", "top", "top", etc., can be used herein to describe the spatial positional relationship of one device or feature with other devices or features as shown in the drawings. It should be understood that the spatial relative terms are intended to include different orientations in use or operation in addition to the orientation of the device described in the drawings. For example, if the device in the drawing is inverted, the device described as "above" or "above" the other device or structure will be positioned "below" or "below" the other device or structure. Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatial relative description used herein is interpreted accordingly.

[0056] In addition, it should be noted that the use of "first", "second" and the like to limit parts is only for the convenience of distinguishing the corresponding parts, and if there is no further declaration, the above words have no special meaning, and therefore cannot be understood as limiting the protection scope of the present application.

[0057] The above is only the preferred embodiment of the present application and is not intended to limit the present application. Those skilled in the art can make various modifications and changes to the present application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A conductive film, characterized by, The application relates to a conductive film, which comprises: a substrate layer (10) comprising a first surface (11) and a second surface (12) along a first direction; a metal conductive layer (20) provided with at least two layers of the metal conductive layer (20) on at least one of the first surface (11) and the second surface (12); a blocking layer (30) provided between two adjacent layers of the metal conductive layer (20), the blocking layer (30) being a structural layer with a material different from that of the metal conductive layer (20), and the thickness of the blocking layer (30) along the first direction being not more than 10 nm.

2. The conductive film according to claim 1, wherein The blocking layer (30) comprises a metal oxide layer.

3. The conductive film according to claim 2, wherein The metal oxide layer comprises a structural layer with a metal element same as that of the metal conductive layer (20).

4. The conductive film according to any one of claims 1 to 3, characterized by The metal conductive layer (20) comprises: a first metal layer (21) located at the surface of the conductive film along the first direction; a second metal layer (22) comprising one or more layers, and one or more layers of the second metal layer (22) being located between the substrate layer (10) and the first metal layer (21) along the first direction, and the surface of one or more layers of the second metal layer (22) close to the first metal layer (21) being provided with the blocking layer (30); wherein the thickness of the second metal layer (22) along the first direction is not less than 300 nm.

5. The conductive film according to claim 4, wherein The thickness of the second metal layer (22) along the first direction is not less than 400 nm and not more than 750 nm.

6. The conductive film according to claim 4, wherein The first metal layer (21) is a multi-layer film structure, and the thickness of each layer of the first metal layer (21) along the first direction is not less than 60 nm.

7. The conductive film according to claim 4, wherein The first metal layer (21) is a single-layer film structure, and the thickness of the film structure along the first direction is not less than 300 nm and not more than 750 nm.

8. The conductive film according to any one of claims 1 to 3 or 5 to 6, characterized by, The sum of the thickness of the metal conductive layer (20) and the thickness of the blocking layer (30) on one side of the substrate layer (10) along the first direction is not less than 750 nm and not more than 1600 nm.

9. The conductive film according to any one of claims 1 to 3 or 5 to 6, characterized by, The metal conductive layer (20) comprises an aluminum layer or a copper layer; and / or The substrate layer (10) comprises at least one of a polypropylene layer, a polyethylene terephthalate layer, a polyethylene layer, a polyamide layer, a polyimide layer, a polyphenylene ether layer, a polyvinyl chloride layer, an ABS plastic layer, a poly-p-phenyleneterephthalamide layer, a polyformaldehyde layer, a polytetrafluoroethylene layer, a polyvinylidene fluoride layer, a polycarbonate layer, a polyvinyl alcohol layer, a polyethylene glycol layer and a cellulose layer; and / or The thickness of the substrate layer (10) along the first direction is not less than 2 um and not more than 12 um.

10. A battery, characterized by The battery comprises a pole piece, and the pole piece comprises the conductive film according to any one of claims 1 to 9.

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