Package structure

Abstract

The utility model discloses a packaging structure, and the structure comprises a lead frame which comprises a main body, a high-voltage pin and a plurality of low-voltage pins, the high-voltage pin and the plurality of low-voltage pins are located at the two sides of the main body of the lead frame respectively, the high-voltage pin is electrically connected with the main body, and the plurality of low-voltage pins are independent of the main body and the high-voltage pin; the power device unit is located on the main body, and the high-voltage pin and at least part of the low-voltage pins are electrically connected with the power device unit; the plastic package body wraps the power device unit and part of the lead frame, and a main body of the lead frame extends to the outside along a second side edge of the plastic package body and is connected with the high-voltage pin; the plurality of low-voltage pins extend to the outside along the first side edge of the plastic package body, and the first side edge and the second side edge are oppositely arranged. According to the packaging structure provided by the invention, the low-voltage pin and the high-voltage pin are oppositely arranged at the two ends of the body and are independent of the body and the high-voltage pin, so that the creepage distance and the output current of a product are improved, and the working scene of the product is wider.

Description

TECHNICAL FIELD

[0001] The utility model relates to the technical field of semiconductor packaging, more particularly to a packaging structure. BACKGROUND

[0002] With the in-depth application of product fields, the industrial level application such as consumer, frequency conversion and energy storage and even the application of automobile level products, the product performance requirements of power devices are also constantly improved.

[0003] The signal crosstalk between the high-voltage terminal and the low-voltage terminal in the existing packaging structure is large, resulting in large loss of power devices. UTILITY MODEL CONTENT

[0004] In view of the above problems, the utility model aims at providing a packaging structure solving the above technical problems.

[0005] According to the application, a packaging structure is provided, comprising: a lead frame, the lead frame comprising a main body, a high-voltage pin and a plurality of low-voltage pins, the high-voltage pin and the plurality of low-voltage pins being located on both sides of the main body of the lead frame respectively, the high-voltage pin being electrically connected with the main body, the plurality of low-voltage pins being independent of the main body and the high-voltage pin;

[0006] a power device unit, the power device unit being located on the main body of the lead frame, the high-voltage pin and at least part of the low-voltage pins being electrically connected with the power device unit; and

[0007] a plastic package, the plastic package covering the power device unit and part of the lead frame, the main body of the lead frame extending to the outside along the second side edge of the plastic package and being connected with the high-voltage pin, the plurality of low-voltage pins extending to the outside along the first side edge of the plastic package, the first side edge of the plastic package being oppositely arranged with the second side edge.

[0008] Optionally, the width of the high-voltage pin is greater than the width of the plurality of low-voltage pins.

[0009] Optionally, the width of the high-voltage pin is 16.8mm±0.3mm.

[0010] Optionally, the thickness of at least part of the main body of the lead frame is equal to the thickness of the high-voltage pin.

[0011] Optionally, the thickness of the main body of the lead frame is greater than the thickness of the plurality of low-voltage pins.

[0012] Optionally, the thickness of the high-voltage pin is 2.0mm±0.1mm.

[0013] Optionally, the thickness of each low-voltage pin is 0.6mm±0.1mm.

[0014] Optionally, each of the low voltage pins comprises a first portion, a second portion and a third portion, the second portion of the low voltage pin connects the first portion of the low voltage pin and the third portion of the low voltage pin, the first portion of the low voltage pin is covered by the plastic package, the second portion of the low voltage pin is a bending portion, and the third portion of the low voltage pin is located outside the plastic package.

[0015] Optionally, the plurality of low voltage pins comprises power pins and signal pins.

[0016] Optionally, the first portion of the power pin and the third portion of the power pin are parallel, and the first portion of the signal pin and the third portion of the signal pin are parallel.

[0017] Optionally, the first portion of the power pin and the first portion of the signal pin are on a first horizontal plane, and the third portion of the power pin and the third portion of the signal pin are on a second horizontal plane, the first horizontal plane and the second horizontal plane are parallel but not on the same plane.

[0018] Optionally, the bending height of the power pin and the signal pin is 2.5 mm ± 0.3 mm.

[0019] Optionally, the first portion of the power pin and the third portion of the power pin are parallel, and the first portion of the signal pin and the third portion of the signal pin are perpendicular.

[0020] Optionally, the bending height of the power pin is 2.5 mm ± 0.3 mm, and the bending height of the signal pin is 10.0 mm ± 0.3 mm.

[0021] Optionally, the first portion of the power pin and the first portion of the signal pin are arranged in parallel.

[0022] Optionally, the first portion of the power pin and the first portion of the signal pin are on a first horizontal plane.

[0023] Optionally, the width of the power pin is greater than the width of the signal pin.

[0024] Optionally, the width of the power pin is 6.5 mm ± 0.3 mm.

[0025] Optionally, the width of the signal pin is 1.2 mm ± 0.3 mm.

[0026] Optionally, the main body of the lead frame and the high voltage pin are an integral structure.

[0027] Optionally, the power device unit comprises an insulated gate bipolar transistor and a fast recovery diode, the power pin comprises an emitter pin, the signal pin comprises a base pin, and the high voltage pin comprises a collector pin,

[0028] The first surface of the insulated gate bipolar transistor is opposite to the second surface, the second surface of the insulated gate bipolar transistor faces the first surface of the main body of the lead frame, the collector led out from the second surface of the insulated gate bipolar transistor is connected with the first surface of the main body of the lead frame and connected with the collector pin, the emitter led out from the first surface of the insulated gate bipolar transistor is electrically connected with the emitter pin, and the base led out from the first surface of the insulated gate bipolar transistor is electrically connected with the base pin.

[0029] The first surface of the fast recovery diode is opposite to the second surface, the second surface of the fast recovery diode faces the first surface of the main body of the lead frame, the cathode led out from the second surface of the fast recovery diode is electrically connected with the first surface of the main body of the lead frame, and the anode led out from the first surface of the fast recovery diode is connected with the emitter led out from the first surface of the insulated gate bipolar transistor and electrically connected with the emitter pin.

[0030] Optionally, the signal pin further comprises a Kelvin pin, and the emitter led out from the first surface of the insulated gate bipolar transistor is electrically connected with the Kelvin pin.

[0031] Optionally, the insulated gate bipolar transistor and the fast recovery diode are arranged side by side on both sides of the main body of the lead frame, and the distance between the fast recovery diode and the collector pin is less than the distance between the insulated gate bipolar transistor and the collector pin.

[0032] Optionally, the main body of the lead frame is connected with the collector of the insulated gate bipolar transistor and the cathode of the fast recovery diode through conductive adhesive material, the main body of the lead frame is connected with the collector pin, the emitter pin is connected with the emitter of the insulated gate bipolar transistor and the anode of the fast recovery diode through a connecting line, and the base pin is connected with the base of the insulated gate bipolar transistor through a connecting line.

[0033] Optionally, the Kelvin pin is connected with the emitter of the insulated gate bipolar transistor through a connecting line.

[0034] Optionally, the power device unit comprises a metal-oxide-semiconductor field effect transistor, the power pin comprises a source pin, the signal pin comprises a gate pin, and the high voltage pin comprises a drain pin.

[0035] The first surface of the metal-oxide semiconductor field effect transistor is opposite to the second surface, the second surface of the metal-oxide semiconductor field effect transistor faces the first surface of the main body of the lead frame, the drain electrode led out from the second surface of the metal-oxide semiconductor field effect transistor is connected with the first surface of the main body of the lead frame and is electrically connected with the drain pin, the source electrode led out from the first surface of the metal-oxide semiconductor field effect transistor is electrically connected with the source pin, and the gate electrode led out from the first surface of the metal-oxide semiconductor field effect transistor is electrically connected with the gate pin.

[0036] Optionally, the main body of the lead frame is connected with the drain electrode of the metal-oxide semiconductor field effect transistor through conductive adhesive material, the main body of the lead frame is connected with the drain pin, the source pin is connected with the source electrode of the metal-oxide semiconductor field effect transistor through a connecting wire, and the gate pin is connected with the gate electrode of the metal-oxide semiconductor field effect transistor through a connecting wire.

[0037] Optionally, the signal pin further comprises a Kelvin pin, and the source electrode led out from the first surface of the metal-oxide semiconductor field effect transistor is electrically connected with the Kelvin pin.

[0038] Optionally, the Kelvin pin is connected with the source electrode of the metal-oxide semiconductor field effect transistor through a connecting wire.

[0039] Optionally, the power device is a fast recovery diode, the power pin comprises an anode pin, the signal pin is suspended, and the high-voltage pin comprises a cathode pin,

[0040] The first surface of the fast recovery diode is opposite to the second surface, the second surface of the fast recovery diode faces the first surface of the main body of the lead frame, the cathode led out from the second surface of the fast recovery diode is connected with the first surface of the main body of the lead frame to be connected with the cathode pin, and the anode led out from the first surface of the fast recovery diode is electrically connected with the anode pin.

[0041] Optionally, the main body of the lead frame is connected with the cathode of the fast recovery diode through conductive adhesive material, the main body of the lead frame is connected with the cathode pin, and the anode pin is connected with the anode of the fast recovery diode through a connecting wire.

[0042] Optionally, the adhesive material is lead-tin solder, conductive glue, tin paste or sintered silver.

[0043] Optionally, the connecting wire is a bonding wire, a copper sheet or an aluminum strip.

[0044] Optionally, the plurality of low-voltage pins are provided with a packaging hole and a shallow scribe line.

[0045] Optionally, an edge portion of the first surface of the main body of the lead frame is provided with an anti-overflow groove, and the power device unit is located in the anti-overflow groove.

[0046] Optionally, the main body of the lead frame is provided with a packaging hole and a shallow scribe line, and at least one side edge of the main body of the lead frame is provided with a step.

[0047] According to the packaging structure provided by the utility model, the high-voltage pin and the plurality of low-voltage pins are located at two sides of the main body of the lead frame, and the plurality of low-voltage pins are independent of the main body and the high-voltage pin.Further, the plurality of low-voltage pins extend to the outside along the first side edge of the plastic package body, the main body of the lead frame extends to the outside along the second side edge of the plastic package body and is connected with the high-voltage pin, and the first side edge and the second side edge are oppositely arranged.That is, the high-voltage pin and the low-voltage pin in the packaging structure of the application are arranged at two ends, which improves the creepage distance and output current of the product, so that the working scene of the product is more extensive.

[0048] Further, the width of the high-voltage pin of the application is greater than the width of the low-voltage pin, which improves the current capacity of the power device.

[0049] Further, the width of the power pin of the application is greater than the width of the signal pin, so that the power pin can pass a large current, and the current capacity of the power device is improved.

[0050] Further, at least part of the main body of the lead frame of the application is exposed outside the plastic package body for heat dissipation, thereby facilitating the reduction of temperature rise of thermal resistance.

[0051] Further, the bending directions of the power pin and the signal pin of the application are consistent, so that the packaging structure realizes patch welding.

[0052] Further, the bending directions of the power pin and the signal pin of the application are inconsistent, so as to separately weld the power pin and the signal pin of the packaging structure.

[0053] Further, the lead frame and the plastic package of the packaging structure of the application can be reused for different power device units, including but not limited to fast recovery diode, metal-oxide semiconductor field effect transistor, insulated gate bipolar transistor + fast recovery diode, thereby reducing the design and manufacturing cost of the packaging structure.

[0054] Further, the packaging hole and the step provided on the main body of the lead frame in the packaging structure of the application are for increasing the bonding force with the plastic package, the shallow scribe line provided on the main body is for preventing water vapor from entering and increasing the bonding force with the plastic package, and the anti-overflow groove provided on the main body is for preventing the adhesive material from overflowing to the back of the base island.

[0055] Further, the package holes are arranged on the plurality of low-voltage pins in the package structure of the present application to increase the bonding force with the plastic package body, and shallow grooves are further arranged on the plurality of low-voltage pins to prevent water vapor from entering and increase the bonding force with the plastic package body. BRIEF DESCRIPTION OF DRAWINGS

[0056] The above and other objects, features and advantages of the present application will become more apparent from the following description of the preferred embodiments of the present application taken in conjunction with the accompanying drawings, in which:

[0057] Figure 1 Fig. 1 shows a circuit schematic diagram of a package structure according to an embodiment of the present application;

[0058] Figure 2 Fig. 2 shows a package schematic diagram of the package structure in Fig. 1; Figure 1

[0059] Figure 3 Fig. 3 shows a perspective schematic diagram of a package structure according to an embodiment of the present application;

[0060] Figure 4 Fig. 4 shows a side view schematic diagram of the inside of the package structure provided in Fig. 3; Figure 3

[0061] Fig. 5 shows a perspective schematic diagram of another package structure according to an embodiment of the present application; Figure 5

[0062] Fig. 6 shows a side view schematic diagram of the inside of the package structure provided in Fig. 5; Figure 6 Figure 5 Fig. 7 shows a circuit schematic diagram of another package structure according to an embodiment of the present application;

[0063] Figure 7 Fig. 8 shows a package schematic diagram of the package structure in Fig. 7;

[0064] Figure 8 Figure 7 Fig. 9 shows a circuit schematic diagram of yet another package structure according to an embodiment of the present application;

[0065] Figure 9 Fig. 10 shows a package schematic diagram of the package structure in Fig. 9.

[0066] Figure 10 Fig. 11 shows a circuit schematic diagram of still another package structure according to an embodiment of the present application; Figure 9 DETAILED DESCRIPTION

[0067] ​​​​The present application will be described in greater detail by reference to the drawings below. For the sake of clarity, the parts of the drawings are not all necessarily to scale. Furthermore, some known parts can not be shown. In the following, numerous specific details of the present application are described, but as the skilled person will appreciate, the application can be implemented without these specific details.

[0068] The present application can be presented in various forms, some examples of which will be described below.

[0069] Figure 1 A circuit schematic diagram of a packaging structure according to an embodiment of the present application is shown. Figure 2 A packaging schematic diagram of the packaging structure in Figure 1 is shown. Figure 3 A perspective schematic diagram of a packaging structure according to an embodiment of the present application is shown. Figure 4 A perspective schematic diagram of the packaging structure in Figure 3 is shown. A side view schematic diagram of the inside of the packaging structure provided is shown. Figure 5 A perspective schematic diagram of another packaging structure according to an embodiment of the present application is shown. Figure 6 A perspective schematic diagram of the packaging structure in Figure 5 is shown. A side view schematic diagram of the inside of the packaging structure provided is shown. Figure 7 A circuit schematic diagram of another packaging structure according to an embodiment of the present application is shown. Figure 8 A circuit schematic diagram of the packaging structure in Figure 7 is shown. A packaging schematic diagram of the packaging structure in Figure 9 is shown. A circuit schematic diagram of yet another packaging structure according to an embodiment of the present application is shown. Figure 10 A circuit schematic diagram of the packaging structure in Figure 9 is shown. A packaging schematic diagram of the packaging structure in

[0070] wherein, Figure 4 , Figure 6 is a packaging structure with a plastic package removed.

[0071] As shown in Figures 1 to 4 , the packaging structure 100a comprises:

[0072] The lead frame 170 comprises a main body 120, a high-voltage pin 130 and a plurality of low-voltage pins 150, the high-voltage pin 130 and the plurality of low-voltage pins 150 being located on both sides of the main body 120 of the lead frame 170 respectively, the high-voltage pin 130 being electrically connected to the main body 120, and the plurality of low-voltage pins 150 being independent of the main body 120 and the high-voltage pin 130.

[0073] Further, the plurality of low-voltage pins 150 comprises a power pin 151 and a signal pin 152, 153.

[0074] The power device unit is located on the main body 120 of the lead frame 170, and the high-voltage pin 130 and at least part of the low-voltage pins 150 are electrically connected to the power device unit, respectively.

[0075] The plastic package 140 covers the power device unit and part of the lead frame 170, and the plurality of low-voltage pins 150 extend to the outside along a first side edge 142 of the plastic package 140, and the main body 120 of the lead frame 170 extends to the outside along a second side edge 141 of the plastic package 140 and is connected to the high-voltage pin 130, and the first side edge 142 and the second side edge 141 are oppositely arranged. The plastic package 140 is, for example, epoxy resin.

[0076] Further, the width d3 of the high-voltage pin 130 is greater than the width of the plurality of low-voltage pins 150.

[0077] Exemplarily, the width d3 of the high-voltage pin 130 is 16.8 mm ± 0.3 mm.

[0078] The main body 120 of the lead frame 170 and the high-voltage pin 130 are an integral structure, and the lead frame 170 is, for example, an integrally formed special-shaped copper material.

[0079] Further, the thickness of at least part of the main body 120 of the lead frame 170 is equal to the thickness of the high-voltage pin 130.

[0080] Further, the thickness of the main body 120 of the lead frame 170 is greater than the thickness of the plurality of low-voltage pins 150.

[0081] Exemplarily, the thickness d4 of the high-voltage pin 130 is 2.0 mm ± 0.1 mm.

[0082] Exemplarily, the thickness d5 of each low-voltage pin 150 is 0.6 mm ± 0.1 mm.

[0083] Further, the width d1 of the power pin 151 is greater than the width d2 of the signal pin 152 and the signal pin 153.

[0084] Exemplarily, the width d1 of the power pin 151 is 6.5 mm ± 0.3 mm.

[0085] Exemplarily, the width d2 of the signal pin 152 and the signal pin 153 is 1.2 mm ± 0.3 mm.

[0086] Further, each low-voltage pin 150 comprises a first part, a second part and a third part, the second part connects the first part and the third part, the first part is covered by the plastic package 140, the second part is a bending part, and the third part is located outside the plastic package 140.

[0087] For example, the first portion 1511 of power pin 151 is encapsulated by a molding compound 140, the second portion 1512 of power pin 151 is a bent portion, and the first portion 1511 and the third portion 1513 of power pin 151 are arranged in parallel. The first portion 1521 of signal pin 152 is encapsulated by a molding compound 140, the second portion 1522 of signal pin 152 is a bent portion, and the first portion 1521 and the third portion 1523 of signal pin 152 are arranged vertically. The first portion 1531 of signal pin 153 is encapsulated by a molding compound 140, the second portion 1532 of signal pin 153 is a bent portion, and the first portion 1531 and the third portion 1533 of signal pin 153 are arranged vertically. Further, the first portion 1511 of power pin 151 is arranged in parallel with the first portions of signal pins 152 and 153. Further, the first portion 1511 of power pin 151 is arranged on a first horizontal plane with the first portions of signal pins 152 and 153.

[0088] That is, in this embodiment, the bending directions of power pin 151 and signal pins 152 and 153 are opposite. For example, one of power pin 151 and signal pins 152 and 153 is bent upwards, and the other is bent downwards. The bending height d6 of power pin 151 is 2.5mm ± 0.3mm, and the bending height d7 of signal pins 152 and 153 is 10.0mm ± 0.3mm.

[0089] In this embodiment, the power device unit includes an insulated gate bipolar transistor (IGBT) and a fast recovery diode (FRD). Power pin 151 is the emitter pin (E), signal pin 152 is the base pin (G), and high-voltage pin 130 is the collector pin (C).

[0090] like Figure 1 As shown, the emitter of the insulated gate bipolar transistor (IGBT) is connected to the anode and emitter pin E of the fast recovery diode (FRD), the collector of the IGBT is connected to the cathode and collector pin C of the FRD, and the base of the IGBT is connected to the base pin G.

[0091] The first and second surfaces of the Insulated Gate Bipolar Transistor (IGBT) are opposite each other. The second surface of the IGBT faces the first surface of the lead frame 170 body 120. The collector of the IGBT, extending from the second surface, is electrically connected to the first surface of the lead frame 170 body 120 and is connected to the collector pin C. The emitter of the IGBT, extending from the first surface, is electrically connected to the emitter pin E, and the base of the IGBT, extending from the first surface, is electrically connected to the base pin G.

[0092] The first surface of the fast recovery diode FRD is opposite to the second surface, the second surface of the fast recovery diode FRD faces the first surface of the main body 120 of the lead frame 170, the second surface of the fast recovery diode FRD leads out a cathode electrically connected to the first surface of the main body 120 of the lead frame 170, and the first surface of the fast recovery diode FRD leads out an anode electrically connected to the first surface of the insulated gate bipolar transistor IGBT leading out an emitter and an emitter pin E.

[0093] Further, a Kelvin pin K (a signal pin 153) is also included, and the emitter of the first surface of the insulated gate bipolar transistor IGBT is electrically connected to the Kelvin emitter K pin.

[0094] The insulated gate bipolar transistor IGBT and the fast recovery diode FRD are arranged side by side on both sides of the main body 120 of the lead frame 170, and the distance between the fast recovery diode FRD and the collector pin C is less than the distance between the insulated gate bipolar transistor IGBT and the collector pin C.

[0095] The main body 120 of the lead frame 170 is connected to the collector of the insulated gate bipolar transistor IGBT and the cathode of the fast recovery diode FRD through a conductive adhesive material, the main body 120 of the lead frame 170 is electrically connected to the collector pin C, the emitter pin E is connected to the emitter of the insulated gate bipolar transistor IGBT and the anode of the fast recovery diode FRD through a connecting line 111, and the base pin G is connected to the base of the insulated gate bipolar transistor IGBT through a connecting line 112.

[0096] The Kelvin pin K is connected to the emitter of the insulated gate bipolar transistor IGBT through the connecting line 112.

[0097] Further, the adhesive material may, for example, be lead-tin solder, conductive glue, tin paste, or sintered silver.

[0098] Further, the connecting line 111 may, for example, be a bonding wire, a copper sheet, or an aluminum strip.

[0099] Further, the connecting line 112 may, for example, be a bonding wire, a copper sheet, an aluminum strip, a gold-copper wire, an aluminum wire, or an aluminum-copper hybrid wire.

[0100] Further, the power pin 151 of the plurality of low-voltage pins 150 is provided with a packaging hole 153 and a shallow line 155, the signal pin 152 of the plurality of low-voltage pins 150 is also provided with a packaging hole 154 and a shallow line 156, and the signal pin 153 is also provided with a packaging hole 157 and a shallow line 158. The purpose of designing the shallow line on the plurality of low-voltage pins 150 is to prevent water vapor from entering and increase the bonding force with the plastic package 140. The purpose of designing the packaging hole on the plurality of low-voltage pins 150 is to increase the bonding force with the plastic package 140.

[0101] Furthermore, the edge portion of the first surface of the lead frame 170 body 120 is provided with an anti-overflow groove 121, within which the insulated gate bipolar transistor (IGBT) and fast recovery diode (FRD) are located. The purpose of designing the anti-overflow groove 121 around the lead frame 170 is to prevent adhesive material from overflowing onto the second surface of the body 120.

[0102] Furthermore, the main body 120 of the lead frame 170 is provided with encapsulation holes 113 and shallow etched lines 114. The shallow etched lines on the main body 120 of the lead frame 170 are designed to prevent moisture ingress and increase the bonding strength with the molding compound. The encapsulation holes on the main body 120 of the lead frame 170 are designed to increase the bonding strength with the molding compound 140.

[0103] Furthermore, at least one side of the body 120 of the lead frame 170 is provided with a step 122. Exemplarily, steps 122 are provided on both sides of the body 120 that are not connected to the extension and do not face the plurality of low-voltage pins 150. The purpose of the side step design is to increase the bonding strength with the molding compound 140.

[0104] In other embodiments, such as Figures 5 to 6 As shown, the difference between package structure 100b and package structure 100a lies in the different structures of the signal pins among the multiple low-voltage pins.

[0105] The first portion 1511 of power pin 151 is encapsulated by a molding compound 140, the second portion 1512 of power pin 151 is a bent portion, and the first portion 1511 and the third portion 1513 of power pin 151 are arranged in parallel. The first portion 2521 of signal pin 252 is encapsulated by a molding compound 140, the second portion 2522 of signal pin 252 is a bent portion, and the first portion 2521 and the third portion 2523 of signal pin 252 are arranged in parallel. The first portion 2531 of signal pin 253 is encapsulated by a molding compound 140, the second portion 2532 of signal pin 253 is a bent portion, and the first portion 2531 and the third portion 2533 of signal pin 253 are arranged in parallel. Furthermore, the first portion 1511 of the power pin 151 and the first portion of the signal pins 252 and 253 are on the first horizontal plane, and the third portion 1513 of the power pin 151 and the third portion of the signal pins 252 and 253 are on the second horizontal plane. The first horizontal plane and the second horizontal plane are parallel but not on the same plane.

[0106] That is, in this embodiment, the power pin 151 and signal pins 252 and 253 are bent in the same direction. The bending height d6 of the power pin 151 and signal pins 252 and 253 is 2.5mm ± 0.3mm.

[0107] In other embodiments, as shown in FIG. 10C, the package structure 100c differs from the package structure 100a in that the power device unit, the pin names, and the electrical connections between the power device unit and the pins are different. Figures 7 to 8

[0108] The power device unit includes a metal-oxide-semiconductor field-effect transistor (MOSFET), the power pin 151 is a source pin S, the signal pin 152 is a gate pin G, and the high-voltage pin 130 is a drain pin D.

[0109] The source of the metal-oxide-semiconductor field-effect transistor (MOSFET) is connected to the source pin S, the drain of the metal-oxide-semiconductor field-effect transistor (MOSFET) is connected to the drain pin D, and the gate of the metal-oxide-semiconductor field-effect transistor (MOSFET) is connected to the gate pin G.

[0110] The first surface of the metal-oxide-semiconductor field-effect transistor (MOSFET) is opposite to the second surface, the second surface of the metal-oxide-semiconductor field-effect transistor (MOSFET) faces the first surface of the main body 120 of the lead frame 170, the drain of the metal-oxide-semiconductor field-effect transistor (MOSFET) led out from the second surface is electrically connected to the first surface of the main body 120 of the lead frame 170 to be connected to the drain pin D, the source of the metal-oxide-semiconductor field-effect transistor (MOSFET) led out from the first surface is electrically connected to the source pin S, and the gate of the metal-oxide-semiconductor field-effect transistor (MOSFET) led out from the first surface is electrically connected to the gate pin G.

[0111] Further, the signal pin 152 further includes a Kelvin pin K (the signal pin 153), and the source of the metal-oxide-semiconductor field-effect transistor (MOSFET) led out from the first surface is electrically connected to the Kelvin pin K.

[0112] The main body 120 of the lead frame 170 and the drain of the metal-oxide-semiconductor field-effect transistor (MOSFET) are connected through the conductive adhesive material, the main body 120 of the lead frame 170 is electrically connected to the D drain pin, the source pin S and the source of the metal-oxide-semiconductor field-effect transistor (MOSFET) are connected through the connecting wire 111, the gate pin G and the gate of the metal-oxide-semiconductor field-effect transistor (MOSFET) are connected through the connecting wire 112, and the Kelvin pin K and the source of the metal-oxide-semiconductor field-effect transistor (MOSFET) are connected through the connecting wire 112.

[0113] Further, the arrangement mode of the plurality of low-voltage pins in the package structure 100c can also be replaced by the arrangement mode in the package structure 100b.

[0114] In other embodiments, as shown in FIG. 10C, the package structure 100c differs from the package structure 100a in that the power device unit, the pin names, and the electrical connections between the power device unit and the pins are different. Figures 9 to 10 ​As shown, the difference between the packaging structure 100d and the packaging structure 100a lies in that the power device unit, the pin name, and the electrical connection between the power device unit and the pin are different.

[0115] The power device unit comprises a fast recovery diode FRD, the power pin 151 comprises an anode pin 2, the signal pins 152 and 153 are suspended, and the high-voltage pin 130 comprises a cathode pin 1.

[0116] The anode of the fast recovery diode FRD is connected with the anode pin 2, and the cathode of the fast recovery diode FRD is connected with the cathode pin 1.

[0117] The first surface of the fast recovery diode FRD is opposite to the second surface, the second surface of the fast recovery diode FRD faces the first surface of the main body 120 of the lead frame 170, the cathode led out from the second surface of the fast recovery diode FRD is electrically connected with the first surface of the main body 120 of the lead frame 170 to be connected with the cathode pin 1, and the anode led out from the first surface of the fast recovery diode FRD is electrically connected with the anode pin 2.

[0118] The cathode pin 1 is connected with the cathode of the fast recovery diode FRD through the adhesive material, the main body 120 of the lead frame 170 is electrically connected with the cathode pin 1, and the anode pin 2 is connected with the anode of the fast recovery diode FRD through the connecting line 111.

[0119] Further, the arrangement mode of the plurality of low-voltage pins in the packaging structure 100d can also be replaced by the arrangement mode in the packaging structure 100b.

[0120] According to the packaging structure provided in the utility model, the high-voltage pin and the plurality of low-voltage pins are respectively located at two sides of the main body of the lead frame, and the plurality of low-voltage pins are independent of the main body and the high-voltage pin.Further, the plurality of low-voltage pins extend to the outside along the first side edge of the plastic package body, the main body of the lead frame extends to the outside along the second side edge of the plastic package body and is connected with the high-voltage pin, and the first side edge and the second side edge are oppositely arranged.I.e., the high-voltage pin and the low-voltage pin in the packaging structure of the application are arranged at two ends, which improves the creepage distance and output current of the product, so that the working scene of the product is more extensive.

[0121] Further, the width of the high-voltage pin of the application is greater than the width of the low-voltage pin, which improves the current capacity of the power device.

[0122] Further, the width of the power pin of the application is greater than the width of the signal pin, so that the power pin can pass a large current, which improves the current capacity of the power device.

[0123] Further, at least part of the main body of the lead frame of the application is exposed outside the plastic package to dissipate heat, thereby facilitating the reduction of the temperature rise of thermal resistance.

[0124] Further, the bending directions of the power pins and the signal pins of the application are consistent, so that the packaging structure realizes the soldering of patches.

[0125] Further, the bending directions of the power pins and the signal pins of the application are inconsistent, so that the power pins and the signal pins of the packaging structure are separately soldered.

[0126] Further, the lead frame and the plastic package of the packaging structure of the application can be reused for different power device units, including but not limited to fast recovery diodes, metal-oxide semiconductor field effect transistors, insulated gate bipolar transistors + fast recovery diodes, thereby reducing the design and manufacturing costs of the packaging structure.

[0127] Further, the packaging holes and the steps provided on the main body of the lead frame in the packaging structure of the application are to increase the bonding force with the plastic package, and the shallow lines provided on the main body are to prevent water vapor from entering and increase the bonding force with the plastic package, and the anti-overflow grooves provided on the main body are to prevent the overflow of adhesive materials to the back of the base island.

[0128] Further, the packaging holes provided on the plurality of low-voltage pins in the packaging structure of the application are to increase the bonding force with the plastic package, and the shallow lines provided on the plurality of low-voltage pins are to prevent water vapor from entering and increase the bonding force with the plastic package.

[0129] It should be noted that, in this document, the terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "contain" or any other variants thereof are intended to cover non-exclusive inclusion, so that the process, method, article or device including a series of elements not only includes those elements, but also includes other elements not explicitly listed or inherent to such process, method, article or device. Without more limitations, the element defined by the statement "including a" does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0130] In accordance with the embodiments of the present application as described above, these embodiments do not describe all the details, nor limit the present application to only the specific embodiments described. Obviously, many modifications and variations are possible in light of the above teachings. The description of these embodiments was chosen and described in order to provide the best illustration of the principles of the application and its practical application, and to thereby enable one of ordinary skill in the art to utilize the application and with modifications as appropriate for the particular use contemplated. The present application is thus not intended to be limited to the particular embodiments described and is only limited by the scope of the appended claims and equivalents thereof.

Claims

1. A package structure, characterized by, The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package.

2. The package structure of claim 1, wherein, The application relates to a power device unit and a plastic package.

3. The package structure of claim 1, wherein, The application relates to a power device unit and a plastic package.

4. The package structure of claim 1, wherein, The application relates to a power device unit and a plastic package.

5. The package structure of claim 1, wherein, The application relates to a power device unit and a plastic package.

6. The package structure of claim 1, wherein, The application relates to a power device unit and a plastic package.

7. The package structure of claim 1, wherein, The application relates to a power device unit and a plastic package.

8. The package structure of claim 1, wherein, The application relates to a power device unit and a plastic package.

9. The package structure of claim 8, wherein, The application relates to a power device unit and a plastic package.

10. The package structure of claim 9, wherein, The application relates to a power device unit and a plastic package.

11. The package structure of claim 10, wherein, The application relates to a power device unit and a plastic package.

12. The package structure of claim 11, wherein, The application relates to a power device unit and a plastic package.

13. The package structure of claim 9, wherein, The application relates to a power device unit and a plastic package.

14. The package structure of claim 13, wherein, The application relates to a power device unit and a plastic package.

15. The package structure of claim 13, wherein, The application relates to a power device unit and a plastic package.

16. The package structure of claim 15, wherein, The application relates to a power device unit and a plastic package.

17. The package structure of claim 9, wherein, The application relates to a power device unit and a plastic package.

18. The package structure of claim 9, wherein, The application relates to a power device unit and a plastic package.

19. The package structure of claim 9, wherein, The application relates to a power device unit and a plastic package.

20. The package structure of claim 1, wherein, The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. The application relates to a power device unit and a plastic package. 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The package structure of claim 9, wherein, The power device unit comprises an insulated gate bipolar transistor and a fast recovery diode, the power pin comprises an emitter pin, the signal pin comprises a base pin, and the high-voltage pin comprises a collector pin, a first surface of the insulated gate bipolar transistor is opposite to a second surface, the second surface of the insulated gate bipolar transistor faces the first surface of the main body of the lead frame, a collector led out from the second surface of the insulated gate bipolar transistor is connected with the first surface of the main body of the lead frame and connected with the collector pin, an emitter led out from the first surface of the insulated gate bipolar transistor is electrically connected with the emitter pin, and a base led out from the first surface of the insulated gate bipolar transistor is electrically connected with the base pin; a first surface of the fast recovery diode is opposite to a second surface, the second surface of the fast recovery diode faces the first surface of the main body of the lead frame, a cathode led out from the second surface of the fast recovery diode is electrically connected with the first surface of the main body of the lead frame, and an anode led out from the first surface of the fast recovery diode is connected with the emitter led out from the first surface of the insulated gate bipolar transistor and electrically connected with the emitter pin.

22. The package structure of claim 21, wherein, The signal pin further comprises a Kelvin pin, and the emitter led out from the first surface of the insulated gate bipolar transistor is electrically connected with the Kelvin pin.

23. The package structure of claim 21, wherein, The insulated gate bipolar transistor and the fast recovery diode are arranged side by side on both sides of the main body of the lead frame, and the distance between the fast recovery diode and the collector pin is smaller than the distance between the insulated gate bipolar transistor and the collector pin.

24. The package structure of claim 21, wherein, The main body of the lead frame is connected with the collector of the insulated gate bipolar transistor and the cathode of the fast recovery diode through a conductive adhesive material, the main body of the lead frame is connected with the collector pin, the emitter pin is connected with the emitter of the insulated gate bipolar transistor and the anode of the fast recovery diode through a connecting wire, and the base pin is connected with the base of the insulated gate bipolar transistor through a connecting wire.

25. The package structure of claim 22, wherein, The Kelvin pin is connected with the emitter of the insulated gate bipolar transistor through a connecting wire.

26. The package structure of claim 9, wherein, The power device unit comprises a metal-oxide semiconductor field effect transistor, the power pin comprises a source pin, the signal pin comprises a gate pin, and the high-voltage pin comprises a drain pin; a first surface of the metal-oxide semiconductor field effect transistor is opposite to a second surface, the second surface of the metal-oxide semiconductor field effect transistor faces the first surface of the main body of the lead frame, a drain led out from the second surface of the metal-oxide semiconductor field effect transistor is connected with the first surface of the main body of the lead frame and electrically connected with the drain pin, a source led out from the first surface of the metal-oxide semiconductor field effect transistor is electrically connected with the source pin, and a gate led out from the first surface of the metal-oxide semiconductor field effect transistor is electrically connected with the gate pin.

27. The package structure of claim 26, wherein, The main body of the lead frame is connected with the drain of the MOSFET through conductive adhesive material, the main body of the lead frame is connected with the drain pin, the source pin is connected with the source of the MOSFET through a connecting wire, and the gate pin is connected with the gate of the MOSFET through a connecting wire.

28. The package structure of claim 26, wherein, The signal pin further comprises a Kelvin pin, and the source of the first surface of the MOSFET is electrically connected to the Kelvin pin.

29. The package structure of claim 28, wherein, The Kelvin pin is connected with the source of the MOSFET through a connecting wire.

30. The package structure of claim 9, wherein, The power device is a fast recovery diode, the power pin comprises an anode pin, the signal pin is suspended, and the high-voltage pin comprises a cathode pin, The first surface of the fast recovery diode is opposite to the second surface, the second surface of the fast recovery diode faces the first surface of the main body of the lead frame, the cathode of the second surface of the fast recovery diode is connected to the first surface of the main body of the lead frame to be connected with the cathode pin, and the anode of the first surface of the fast recovery diode is electrically connected with the anode pin.

31. The package structure of claim 30, wherein, The main body of the lead frame is connected with the cathode of the fast recovery diode through conductive adhesive material, the main body of the lead frame is connected with the cathode pin, and the anode pin is connected with the anode of the fast recovery diode through a connecting wire.

32. The package structure of claim 24 or 27 or 31, wherein, The adhesive material is lead-tin solder, conductive glue, tin paste or sintered silver.

33. The package structure of claim 24 or 25 or 27 or 29 or 31, wherein, The connecting wire is a bonding wire, a copper sheet or an aluminum strip.

34. The package structure of claim 1, wherein, The plurality of low-voltage pins are provided with packaging holes and shallow scribe lines.

35. The package structure of claim 1, wherein, An edge portion of the first surface of the main body of the lead frame is provided with an anti-overflow groove, and the power device unit is located in the anti-overflow groove.

36. The package structure of claim 1, wherein, The main body of the lead frame is provided with packaging holes and shallow scribe lines, and at least one side edge of the main body of the lead frame is provided with a step.

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