Double-sided poly solar cell structure

Abstract

The utility model provides a double-sided poly solar cell structure. The double-sided poly solar cell structure comprises: a mounting frame; the double-sided solar cell panel is mounted in the mounting frame, a semiconductor substrate is arranged in the middle of the solar cell panel, a first tunneling layer is arranged on the top of the semiconductor substrate, a first doped conductive layer is arranged on the top of the first tunneling layer, and a second doped conductive layer is arranged on the top of the second tunneling layer. A first passivation layer is arranged at the top of the first doped conductive layer, a second tunneling layer is arranged at the bottom of the semiconductor substrate, and a second doped conductive layer is arranged at the bottom of the second tunneling layer. According to the double-sided poly solar cell structure provided by the utility model, double-sided lighting is carried out through the second tunneling layer, the second doped conductive layer and the second passivation layer at the bottom of the semiconductor substrate and the first tunneling layer, the first doped conductive layer and the first passivation layer at the top of the semiconductor substrate in actual work; therefore, the conversion efficiency of the solar cell is effectively improved.

Description

TECHNICAL FIELD

[0001] The utility model relates to a double -sided solar cell technical field especially relates to a double -sided poly solar cell structure. BACKGROUND

[0002] Solar cell is a kind of photovoltaic semiconductor wafer using sunlight to generate electricity, also known as "solar chip" or "photovoltaic cell", it can output voltage and produce current in the case of loop as long as the light intensity of certain illumination condition is met.

[0003] The eternal theme of photovoltaic industry is to improve cell conversion efficiency and reduce degree electric cost. With the gradual approach of P-type cell conversion efficiency to its theoretical limit, N-type cell develops as the mainstream of the industry due to its own advantages. At present, the mainstream N-type cell has TOPCon, heterojunction HJT, BC technology and the like.

[0004] Among them, TOPCon cell is the current mainstream technology, and its market share in China in 2024 is expected to exceed 60%, and currently the passivation structure of TOPCon cell is mainly on the back of the cell, so it is necessary to develop a double-sided POLY structure to further improve the conversion efficiency of the cell.

[0005] Therefore, it is necessary to provide a double-sided poly solar cell structure to solve the above technical problems. INVENTION CONTENTS

[0006] The utility model provides a kind of double-sided poly solar cell structure, solve the problem that the passivation structure of TOPCon cell is mainly on the back of the cell, causes the limited conversion efficiency of cell, reduces the conversion efficiency of solar cell.

[0007] To solve the above technical problems, the utility model provides a kind of double-sided poly solar cell structure, comprising: mounting frame;

[0008] Double-sided solar cell panel, the double-sided solar cell panel is installed in the inside of mounting frame, the middle position of the solar cell panel is provided with semiconductor substrate, the top of the semiconductor substrate is provided with first tunneling layer, the top of the first tunneling layer is provided with first doped conductive layer, the top of the first doped conductive layer is provided with first passivation layer, the bottom of the semiconductor substrate is provided with second tunneling layer, the bottom of the second tunneling layer is provided with second doped conductive layer, the bottom of the second doped conductive layer is provided with second passivation layer;

[0009] Two first electrodes, two the first electrode is set in the top of double-sided solar cell panel, the bottom of the double-sided solar cell panel is provided with two second electrodes;

[0010] The top of the semiconductor substrate is a first surface, the bottom of the semiconductor substrate is a second surface, the first surface of the semiconductor substrate is provided with a first tunneling layer and a first doped conductive layer, a first passivation layer and a first electrode in the direction away from the base, the second surface of the semiconductor substrate is provided with a second tunneling layer and a second doped conductive layer, a second passivation layer and a second electrode in the direction away from the base, the thickness of the first tunneling layer is 0.8-1.5nm, the thickness of the second tunneling layer is 1.2-2nm, further, the first tunneling layer and the second tunneling layer comprise a material through which a majority carrier can pass, such as an oxide, a nitride oxide, a semiconductor and a conductive polymer, and specifically, the tunneling layer can be formed by a silicon oxide layer comprising silicon oxide Si0x, mainly because the silicon oxide layer has excellent passivation characteristics and other characteristics in the current industry, and the carrier can easily tunnel through the silicon oxide layer, and in some cases, the tunneling layer can also be made of a dielectric material of SiCx, further, the tunneling layer can be prepared by a PECVD in-situ deposition method, an oxidation process or an LPCVD process, and the first surface of the semiconductor substrate removes part of the N+poly-si layer in the non-grid line area by laser, and then removes the remaining tunneling layer after cleaning.

[0011] Preferably, the thickness and doping concentration of the second doped conductive layer are greater than those of the first doped conductive layer, and the second doped conductive layer is an amorphous silicon layer doped with B or Ga;

[0012] The first doped conductive layer is mainly an amorphous silicon layer doped with phosphorus, and further, the amorphous silicon layer can contain nitrogen or carbon elements; the first doped conductive layer can be prepared by a PECVD method or an LPCVD method plus annealing, and the phosphorus source can be PH3; the structure of the amorphous silicon layer doped with phosphorus can be a low-doped-concentration amorphous silicon layer, an oxide layer with a certain thickness, a high-doped-concentration amorphous silicon layer, and an oxide layer with a thickness of 0.5-1nm is arranged between the two amorphous silicon layers with different thicknesses and concentrations, which can further reduce the internal diffusion of phosphorus and thus reduce the internal absorption of light; the silicon oxide layer of the intermediate layer can be silicon oxide, silicon nitride oxide, silicon carbide or intrinsic silicon.

[0013] Preferably, the top of the mounting frame is provided with a sealing frame, the two sides of the mounting frame are provided with clamping strips in a staggered manner, the two sides of the mounting frame are respectively provided with fixing frames, the top and bottom of each fixing frame are provided with two mounting buckles, the inside of each mounting buckle is provided with a clamping block with a connecting frame, each group of connecting frames are fixedly connected with protective covers, one side of each clamping block away from the mounting buckle is provided with a limiting buckle, the bottom of the inner wall of the limiting buckle is fixedly connected with a partition plate, the two sides of the partition plate are provided with two supporting springs through two fixed discs, the other end of each group of supporting springs is fixedly connected with a movable plate, the other side of each movable plate is fixedly connected with a supporting bolt, and the other side of each movable plate is provided with a supporting bolt;

[0014] The sealing frame is installed on the top of the mounting frame by bolts to seal the opening, and the connecting part is sealed by a sealing strip to avoid water entering, and the fixing frame is installed on the outer surface of the clamping strip to connect multiple mounting frames, and the clamping strip is fixed in the fixing frame by bolts, and the four clamping blocks on the same surface and the connecting frame form a group.

[0015] Preferably, two through installation grooves are formed in the two sides of the fixing frame, and the protective cover is made of polymethyl methacrylate material.

[0016] The light transmittance of the protective cover can be up to %; the protective cover can be conveniently disassembled and cleaned during the protection process, and the protective cover can be conveniently replaced if damaged due to collision.

[0017] Preferably, the bottom of the fixing frame is fixedly connected with a connecting buckle, and the connecting buckle is threadedly connected with an installation bolt on one side.

[0018] The connecting buckle is connected with the support of the mounting frame.

[0019] Preferably, a water guide strip is installed on the two sides of the upper protective cover, and a drainage groove is formed in the top of the water guide strip.

[0020] The water guide strip can avoid water directly falling into the connecting part of the mounting frame and the fixing frame, and reduce water erosion.

[0021] Preferably, the bifacial solar cell panel comprises a base layer, the top and bottom of the base layer are provided with a passivation layer, and the other side of the passivation layer is provided with an electrode.

[0022] The base layer is a silicon wafer substrate: the base of the bifacial Poly solar cell is a silicon wafer substrate, which is the core part of the entire cell and is responsible for bearing the main process of photoelectric conversion; the passivation layer: in order to reduce the recombination of photo-generated carriers and improve the photoelectric conversion efficiency, the bifacial Poly cell usually covers a passivation layer on the surface of the silicon wafer.

[0023] Preferably, the other side of the electrode is provided with an electric field layer, and the other side of the electric field layer is provided with an anti-reflection layer.

[0024] The electric field layer is a back surface electric field layer: in order to enhance the light absorption capacity and current collection efficiency of the cell, the bifacial Poly cell can also contain a back surface electric field layer; the anti-reflection layer is an anti-reflection film: in order to improve the utilization rate of light and reduce reflection loss.

[0025] Compared with the related art, the bifacial poly solar cell structure has the following beneficial effects:

[0026] The utility model provides a kind of double-sided poly solar cell structure, to improve the conversion efficiency of solar cell, first tunneling layer, first doped conductive layer and first passivation layer are sequentially arranged on the top of semiconductor substrate, second tunneling layer, second doped conductive layer and second passivation layer are sequentially arranged on the bottom of semiconductor substrate, electrode area and non-electrode area of the top and bottom of semiconductor substrate are used, non-electrode area is handled by laser, cleaning is carried out and the top of semiconductor substrate is secondly texturing, inverted pyramid structure is formed, light trapping effect of bottom cell is increased, the number of penetration of light in absorption layer is increased to further prolong optical path, weak light response of TOPCon bottom cell is increased, first tunneling layer and first doped conductive layer are sequentially deposited on the top of pyramid structure semiconductor substrate, annealing crystallization forms doped polysilicon, two-sided light collection is carried out by second tunneling layer, second doped conductive layer and second passivation layer of the bottom of semiconductor substrate and first tunneling layer, first doped conductive layer and first passivation layer of the top of semiconductor substrate in actual work, so that the conversion efficiency of solar cell is effectively improved. BRIEF DESCRIPTION OF DRAWINGS

[0027] Figure 1 It is the structure schematic view of the first embodiment of the utility model provides a kind of double-sided poly solar cell structure;

[0028] Figure 2 It is the structure schematic view provided by the utility model;

[0029] Figure 3 It is the structure schematic view of the second embodiment of the utility model provides a kind of double-sided poly solar cell structure

[0030] Figure 4 It is the structure schematic view of the utility model provides installation frame;

[0031] Figure 5 It is provided by the utility model Figure 4 The enlarged view of place A shown in the figure;

[0032] Figure 6 It is the structure schematic view of the utility model provides support spring;

[0033] Figure 7 It is the structure schematic view of the utility model provides double-sided solar cell panel;

[0034] Figure 8 It is provided by the utility model Figure 7 The enlarged view of place B shown in the figure.

[0035] The figure label: 1, installation frame, 2, protective cover, 3, sealing frame, 4, drainage groove, 5, water guide strip, 6, clamping strip, 7, installation groove, 8, fixing frame, 9, installation buckle, 10, limiting buckle, 11, clamping block, 12, connecting frame, 13, connecting buckle, 14, installation bolt, 15, partition plate, 16, fixed disc, 17, supporting bolt, 18, pressing block, 19, movable plate, 20, supporting spring, 21, double-sided solar cell panel, 211, base layer, 212, passivation layer, 213, electrode, 214, electric field layer, 215, anti-reflection layer, 22, second electrode, 23, first electrode, 24, second doped conductive layer, 25, second tunneling layer, 26, second passivation layer, 27, semiconductor substrate, 28, first tunneling layer, 29, first doped conductive layer, 30, first passivation layer. DETAILED DESCRIPTION

[0036] The utility model will be further described below in combination with the drawings and embodiments.

[0037] First embodiment

[0038] Please combine with Figure 1 , Figure 2 Among them, Figure 1 It is structure schematic diagram of first embodiment of double-sided poly solar cell structure provided by the utility model; Figure 2 It is structure schematic diagram provided by the utility model. A double-sided poly solar cell structure includes: installation frame 1;

[0039] Double-sided solar cell panel 21, the double-sided solar cell panel 21 is installed in the inside of installation frame 1, the middle position of solar cell panel 21 is provided with semiconductor substrate 27, the top of semiconductor substrate 27 is provided with first tunneling layer 28, the top of first tunneling layer 28 is provided with first doped conductive layer 29, the top of first doped conductive layer 29 is provided with first passivation layer 30, the bottom of semiconductor substrate 27 is provided with second tunneling layer 25, the bottom of second tunneling layer 25 is provided with second doped conductive layer 24, the bottom of second doped conductive layer 24 is provided with second passivation layer 26;

[0040] Two first electrodes 23, two first electrodes 23 are arranged at the top of double-sided solar cell panel 21, and the bottom of double-sided solar cell panel 21 is provided with two second electrodes 22;

[0041] The top of the semiconductor substrate 27 is a first surface, the bottom of the semiconductor substrate 27 is a second surface, the first surface of the semiconductor substrate 27 is provided with a first tunneling layer 28 and a first doped conductive layer 29, a first passivation layer 30 and a first electrode 23 in the direction away from the base, the second surface of the semiconductor substrate 27 is provided with a second tunneling layer 25 and a second doped conductive layer 24, a second passivation layer 26 and a second electrode 22 in the direction away from the base, the thickness of the first tunneling layer 28 is 0.8-1.5nm, the thickness of the second tunneling layer 25 is 1.2-2nm, further, the first tunneling layer 28 and the second tunneling layer 25 include materials through which a majority of carriers can pass, such as oxides, nitrides, semiconductors and conductive polymers, and the specific tunneling layer can be formed by a silicon oxide layer including silicon oxide Si0x, which has excellent passivation characteristics and other characteristics in the current industry, and the carriers can easily tunnel through the silicon oxide layer, and in some cases can also be made of dielectric materials of SiCx, further, the tunneling layer can be prepared by PECVD in-situ deposition method, oxidation process or LPCVD process, the first surface of the semiconductor substrate 27 removes part of the N+poly-si layer in the non-grid line area by laser, and then removes the remaining tunneling layer after cleaning, the second surface of the semiconductor substrate 27 removes part of the P+poly-si layer in the non-grid line area by laser, reduces the internal absorption of light, another scheme is to thin the P+poly-si layer on the second surface as a whole by laser, which reduces the internal absorption of light, the first passivation layer 30 and the second passivation layer 26 can be aluminum oxide, silicon nitride, silicon oxynitride, silicon oxide, two or more of which are combined into a film layer, the first electrode 23 penetrates the first passivation layer 30 and is connected to the first doped conductive layer 29, and can be connected to the surface of the first doped conductive layer 29, and similarly the second electrode 22 penetrates the second passivation layer 26 and is connected to the surface of the second doped conductive layer 24.

[0042] The thickness and doping concentration of the second doped conductive layer 24 are greater than those of the first doped conductive layer 29, and the second doped conductive layer 24 is an amorphous silicon layer doped with B or Ga;

[0043] The first doped conductive layer 29 is mainly a phosphorus-doped amorphous silicon layer, and the amorphous silicon layer can further contain nitrogen or carbon elements; the first doped conductive layer can be prepared by a PECVD method or a LPCVD method with annealing, and the phosphorus source can be PH3; the structure of the phosphorus-doped amorphous silicon layer can be a low-doped concentration amorphous silicon layer, an oxide layer with a certain thickness, and a high-doped concentration amorphous silicon layer; an oxide layer with a thickness of 0.5-1 nm is arranged between the two amorphous silicon layers with different thicknesses and concentrations, so as to further reduce the internal diffusion of phosphorus and thus reduce the internal absorption of light; the intermediate oxide layer can be silicon oxide, silicon oxynitride, silicon carbide or intrinsic silicon; the second doped conductive layer 24 is an amorphous silicon layer which can contain nitrogen or carbon elements; the second doped conductive layer can be prepared by a PECVD method or a LPCVD method with annealing, and the boron source can be borane or TMB; the boron source can also be boron halide when the second doped conductive layer is prepared by a diffusion furnace.

[0044] The top of the mounting frame 1 is provided with a sealing frame 3, the two sides of the mounting frame 1 are provided with clamping strips 6, and the two sides of the mounting frame 1 are respectively provided with fixing frames 8. The top and bottom of each fixing frame 8 are provided with two mounting buckles 9, the inside of the mounting buckle 9 is provided with a clamping block 11 with a connecting frame 12, each group of connecting frames 12 are fixedly connected with protective covers 2, one side of each clamping block 11 away from the mounting buckle 9 is provided with a limiting buckle 10, the bottom of the inner wall of the limiting buckle 10 is fixedly connected with a partition plate 15, and the two sides of the partition plate 15 are provided with two supporting springs 20 through two fixed discs 16. The other end of each group of supporting springs 20 is fixedly connected with a movable plate 19, and the other side of the movable plate 19 is fixedly connected with a supporting bolt 17. The other side of the movable plate 19 is provided with a supporting bolt 17.

[0045] The sealing frame 3 is mounted on the top of the mounting frame 1 by bolts to seal the opening, and the connecting part is sealed by a sealing strip to prevent water from entering. The fixing frame 8 is mounted on the outer surface of the clamping strip 6 and can connect multiple mounting frames 1. The clamping strip 6 is fixed in the fixing frame 8 by bolts. Four clamping blocks 11 and connecting frames 12 on the same surface form a group. One side of the mounting buckle 9 has an opening for the clamping block 11 to enter. The other side of the mounting buckle 9 is provided with an opening for the limiting buckle 10 to move, and the opening has a hole for the supporting bolt 17 to enter. The clamping block 11 can be installed in the mounting buckle 9 by the limiting buckle 10. The bottom of the movable plate 19 and the bottom of the inner wall of the limiting buckle 10 are in contact, but it does not affect the left and right movement. The partition plate 15 and the inner surface of the limiting buckle 10 are in contact, which divides the inner part of the limiting buckle 10 into two areas. Two supporting springs 20 on the same side form a group.

[0046] The two sides of the fixing frame 8 are provided with two penetrating installation grooves 7, and the protective cover 2 is made of polymethyl methacrylate material.

[0047] The light transmittance of the protective cover 2 can be up to 92%, which is convenient to disassemble and clean during the protection process, and the protective cover 2 can be replaced conveniently if the protective cover 2 is damaged due to collision; the mounting groove 7 is used for clamping the clamping strip 6, and the mounting groove 7 is open at the back end of the fixing frame 8, so that the clamping strip 6 is clamped conveniently.

[0048] The bottom of the fixing frame 8 is fixedly connected with a connecting buckle 13, and one side of the connecting buckle 13 is threadedly connected with a mounting bolt 14.

[0049] The connecting buckle 13 is connected with the support of the mounting frame 1, and the mounting bolt 14 is used for fixing the connecting buckle 13 and the support together, so that the mounting frame 1 can be mounted at a corresponding position.

[0050] The water guide strip 5 is arranged on the top of the protective cover 2, and the top of the water guide strip 5 is provided with a drainage groove 4.

[0051] The drainage groove 4 can assist in draining water, so that water is not directly poured into the connecting position of the mounting frame 1 and the fixing frame 8, and water erosion is reduced.

[0052] The double-sided solar cell panel 21 comprises a base layer 211, the top and bottom of the base layer 211 are provided with a passivation layer 212, and the other side of the passivation layer 212 is provided with an electrode 213.

[0053] The base layer 211 is a silicon wafer substrate: the basis of the double-sided Poly solar cell is a silicon wafer substrate, which is the core part of the entire cell and is responsible for bearing the main process of photoelectric conversion; the passivation layer 212 is used for reducing the recombination of photo-generated carriers and improving the photoelectric conversion efficiency; and the electrode 213 is used for collecting and transmitting photo-generated current.

[0054] The other side of the electrode 213 is provided with an electric field layer 214, and the other side of the electric field layer 214 is provided with an anti-reflection layer 215.

[0055] The electric field layer 214 is a back surface electric field layer: in order to enhance the light absorption capacity and current collection efficiency of the cell, the double-sided Poly solar cell can also comprise a back surface electric field layer; and the anti-reflection layer 215 is an anti-reflection film: in order to improve the utilization rate of light and reduce reflection loss, the surface of the double-sided Poly solar cell is usually covered with an anti-reflection film.

[0056] The working principle of the double-sided poly solar cell structure is as follows:

[0057] The first tunneling layer 28, the first doped conductive layer 29 and the first passivation layer 30 are sequentially arranged above the semiconductor substrate 27, and the second tunneling layer 25, the second doped conductive layer 24 and the second passivation layer 26 are sequentially arranged below the semiconductor substrate 27, the electrode area and the non-electrode area of the top and bottom of the semiconductor substrate 27 are utilized, the non-electrode area is treated by laser, the cleaning is performed, the top of the semiconductor substrate 27 is subjected to secondary texturing, the inverted pyramid structure is formed, the light trapping effect of the bottom cell is increased, the penetration times of light in the absorption layer are increased, the optical path is prolonged, the weak light response of the TOPCon bottom cell is increased, the first tunneling layer 28 and the first doped conductive layer 29 are sequentially deposited on the top of the pyramid structure semiconductor substrate 27, and the annealing crystallization is performed to form doped polysilicon, and the double-side light collection is performed through the second tunneling layer 25, the second doped conductive layer 24 and the second passivation layer 26 of the bottom of the semiconductor substrate 27 and the first tunneling layer 28, the first doped conductive layer 29 and the first passivation layer 30 of the top of the semiconductor substrate 27 in actual work.

[0058] Compared with the related art, the double-side poly solar cell structure has the following beneficial effects:

[0059] In order to improve the conversion efficiency of the solar cell, the first tunneling layer 28, the first doped conductive layer 29 and the first passivation layer 30 are sequentially arranged above the semiconductor substrate 27, and the second tunneling layer 25, the second doped conductive layer 24 and the second passivation layer 26 are sequentially arranged below the semiconductor substrate 27, the electrode area and the non-electrode area of the top and bottom of the semiconductor substrate 27 are utilized, the non-electrode area is treated by laser, the cleaning is performed, the top of the semiconductor substrate 27 is subjected to secondary texturing, the inverted pyramid structure is formed, the light trapping effect of the bottom cell is increased, the penetration times of light in the absorption layer are increased, the optical path is prolonged, the weak light response of the TOPCon bottom cell is increased, the first tunneling layer 28 and the first doped conductive layer 29 are sequentially deposited on the top of the pyramid structure semiconductor substrate 27, and the annealing crystallization is performed to form doped polysilicon, and the double-side light collection is performed through the second tunneling layer 25, the second doped conductive layer 24 and the second passivation layer 26 of the bottom of the semiconductor substrate 27 and the first tunneling layer 28, the first doped conductive layer 29 and the first passivation layer 30 of the top of the semiconductor substrate 27 in actual work, thereby effectively improving the conversion efficiency of the solar cell.

[0060] Second embodiment

[0061] Please refer to Figure 3 , Figure 4 , Figure 5 , Figure 6 , Figure 7 and Figure 8 , Figure 3The utility model provides a kind of structure schematic view of second embodiment of double-sided poly solar cell structure provided by the utility model Figure 4 The utility model provides the structure schematic view of mounting frame; Figure 5 The utility model provides Figure 4 The utility model provides the enlarged view of place A shown in the figure;

[0062] Figure 6 The utility model provides the structure schematic view of supporting spring; Figure 7 The utility model provides the structure schematic view of double-sided solar cell panel; Figure 8 The utility model provides Figure 7 The utility model provides the enlarged view of place B shown in the figure;A kind of double-sided poly solar cell structure provided in the first embodiment based on the application, another double-sided poly solar cell structure is proposed in the second embodiment of the application.The second embodiment is only the preferred mode of the first embodiment, and the implementation of the second embodiment will not cause impact to the single implementation of the first embodiment.

[0063] Specifically, the second embodiment of the application provides a kind of double-sided poly solar cell structure, which is different from the first embodiment of the application, a double-sided poly solar cell structure, the top of the mounting frame 1 is equipped with sealing frame 3, the both sides of the mounting frame 1 are installed with clamping strip 6, the both sides of the mounting frame 1 are installed with fixed frame 8 respectively, the top and bottom of each fixed frame 8 are equipped with two installation buckles 9, the inside of the installation buckle 9 is provided with a clamping block 11 with connecting frame 12, each group of connecting frame 12 is fixedly connected with protective cover 2, one side of each clamping block 11 away from installation buckle 9 is equipped with limiting buckle 10;

[0064] The utility model discloses a kind of supporting springs, and the supporting spring 20 is fixedly connected with movable plate 19 in the other end of each group, the other side of movable plate 19 is fixedly connected with support bolt 17, the other side of movable plate 19 is equipped with support bolt 17;

[0065] The sealing frame 3 is installed on the top of the mounting frame 1 by bolts to seal the opening, and the connection is sealed by a sealing strip to prevent water from entering. The fixing frame 8 is installed on the outer surface of the clamping strip 6, and multiple mounting frames 1 can be connected. The clamping strip 6 is fixed inside the fixing frame 8 by bolts. The four clamping blocks 11 on the same surface and the connecting frame 12 form a group. One side of the mounting buckle 9 has a port for clamping the clamping block 11. The other side of the mounting buckle 9 is provided with a port for the movable limiting buckle 10, and a hole is provided inside the port for clamping the supporting bolt 17. The clamping block 11 can be installed inside the mounting buckle 9 through the limiting buckle 10. The bottom of the movable plate 19 contacts the bottom of the inner wall of the limiting buckle 10, but does not affect the left and right movement. The partition plate 15 contacts the inner surface of the limiting buckle 10, dividing the inner part of the limiting buckle 10 into two areas. The two supporting springs 20 on the same side form a group.

[0066] Two through installation grooves 7 are formed on the two sides of the fixing frame 8. The protective cover 2 is made of polymethyl methacrylate material.

[0067] The light transmittance of the protective cover 2 can be as high as 92%. It is convenient to disassemble and clean during the protection process. If damaged due to impact, it is convenient to replace. The installation groove 7 allows the clamping strip 6 to be clamped. The installation groove 7 is open at one end of the back of the fixing frame 8, which is convenient for clamping the clamping strip 6.

[0068] The bottom of the fixing frame 8 is fixedly connected with the connecting buckle 13. The connecting buckle 13 is threadedly connected with the mounting bolt 14 on one side.

[0069] The connecting buckle 13 is connected with the bracket of the mounting frame 1, and the two are fixed together through the mounting bolt 14, so that the mounting frame 1 can be installed at the corresponding position.

[0070] The two sides of the upper protective cover 2 are provided with water guide strips 5. The top of the water guide strip 5 is provided with a drainage groove 4.

[0071] The drainage groove 4 can assist in drainage to prevent water from directly falling into the connection between the mounting frame 1 and the fixing frame 8, and reduce water erosion.

[0072] The double-sided solar cell panel 21 comprises a base layer 211, and a passivation layer 212 is arranged on the top and bottom of the base layer 211. An electrode 213 is arranged on the other side of the passivation layer 212.

[0073] The base layer 211 is a silicon wafer substrate: the base of the double-sided poly solar cell is a silicon wafer substrate, which is the core part of the whole cell, responsible for bearing the main process of photoelectric conversion, the passivation layer 212: in order to reduce the recombination of photo-generated carriers and improve the photoelectric conversion efficiency, the double-sided poly cell will usually cover a passivation layer on the surface of the silicon wafer, and the electrode 213: in order to collect and transmit the photo-generated current, the double-sided poly cell covers the electrode on the passivation layer.

[0074] The other side of the electrode 213 is provided with an electric field layer 214, and the other side of the electric field layer 214 is provided with an anti-reflection layer 215;

[0075] The electric field layer 214 is a back surface electric field layer: in order to enhance the light absorption capacity and current collection efficiency of the cell, the double-sided poly cell may also contain a back surface electric field layer, and the anti-reflection layer 215 is an anti-reflection film: in order to improve the utilization rate of light and reduce the reflection loss, the surface of the double-sided poly cell is usually covered with an anti-reflection film.

[0076] The working principle of the double-sided poly solar cell structure provided by the utility model is as follows:

[0077] First, install the double-sided solar cell panel 21 in the inside of the installation frame 1, and seal the top of the installation frame 1 by the sealing frame 3, which can increase the protection of the four edges of the double-sided solar cell panel 21, and the fixing frame 8 is installed on the two sides of the installation frame 1 through the clamping strip 6, and the clamping strip 6 is installed in the inside of the installation frame 1 through the bolt, which can facilitate the installation of the installation frame 1, and the installation buckle 9 that can allow the clamping block 11 to be clamped is installed on the top and the bottom of the installation frame 1 near the two ends, and after the clamping block 11 is clamped into the installation buckle 9 with the limiting buckle 10, the supporting bolt 17 on the limiting buckle 10 is clamped into the opening inner surface of the installation buckle 9, so that the clamping block 11 is buckled in the inside of the installation buckle 9, and every four clamping blocks 11 are a group and the two sides of the protection cover 2 can facilitate the disassembly and assembly of the protection cover 2, in actual use, after the double-sided solar cell panel 21 is installed, only the four clamping blocks 11 on the protection cover 2 need to be clamped into the installation buckle 9 above or below the two fixing frames 8, and after clamping in place, the supporting bolt 17 will be clamped into the position in contact with the installation buckle 9 by the supporting force of the supporting spring 20, so that the clamping block 11 is buckled in the inside of the installation buckle 9, and after the two protection covers 2 are installed on the top and the bottom of the double-sided solar cell panel 21, the working double-sided solar cell panel 21 can be protected, and when the protection cover 2 needs to be disassembled for cleaning, only the pressing block 18 on the limiting buckle 10 needs to be pressed, and the supporting spring 20 is compressed through the movable plate 19 to make the supporting bolt 17 separate from the installation buckle 9, so that the limitation of the clamping block 11 is released, and then the protection cover 2 can be easily removed by moving it.

[0078] Compared with the related art, the double-sided poly solar cell structure has the following beneficial effects:

[0079] In order to increase the protection of the double-sided poly solar cell in actual use, the double-sided solar cell panel 21 is first installed in the inside of the installation frame 1, and the top of the installation frame 1 is sealed by the sealing frame 3, which can increase the protection of the four edges of the double-sided solar cell panel 21, and the fixing frame 8 is installed on the two sides of the installation frame 1 through the clamping strip 6, and the clamping strip 6 is installed in the inside of the installation frame 1 through the bolt, which can facilitate the installation of the installation frame 1, and the installation buckle 9 that can allow the clamping block 11 to be clamped is installed on the top and the bottom of the installation frame 1 near the two ends, and after the clamping block 11 with the limiting buckle 10 is clamped into the installation buckle 9, the clamping block 11 is clamped in the inside of the installation buckle 9 through the support bolt 17 on the limiting buckle 10 clamped into the opening inner surface of the installation buckle 9, and every four clamping blocks 11 are a group and the two sides of the protective cover 2 are installed, which can facilitate the disassembly and assembly of the protective cover 2, and the high-transparency transparent material is used as the protective cover 2 through the structure, which can protect the top and the bottom of the double-sided solar cell panel 21, avoid the direct falling of dust and the knocking of sharp objects, and is beneficial to prolong the service life and use risk of the double-sided solar cell panel 21.

[0080] The above is only the embodiment of the utility model, and does not limit the patent range of the utility model, and any equivalent structure or equivalent process transformation by using the content of the utility model specification and drawings, or direct or indirect application in other related technical fields, is also included in the patent protection range of the utility model.

Claims

1. A bifacial poly solar cell structure characterized by, Include: Mounting frame; The double-sided solar panel is mounted inside the mounting frame, the middle of the solar panel is provided with a semiconductor substrate, the top of the semiconductor substrate is provided with a first tunneling layer, the top of the first tunneling layer is provided with a first doped conductive layer, the top of the first doped conductive layer is provided with a first passivation layer, the bottom of the semiconductor substrate is provided with a second tunneling layer, the bottom of the second tunneling layer is provided with a second doped conductive layer, and the bottom of the second doped conductive layer is provided with a second passivation layer; Two first electrodes are arranged on the top of the double-sided solar panel, and two second electrodes are arranged on the bottom of the double-sided solar panel.

2. A bifacial poly solar cell structure as claimed in claim 1, wherein, The thickness and doping concentration of the second doped conductive layer are greater than those of the first doped conductive layer, and the second doped conductive layer is an amorphous silicon layer doped with B or Ga.

3. The bifacial poly solar cell structure of claim 1, wherein, The top of the mounting frame is provided with a sealing frame, the two sides of the mounting frame are provided with clamping strips, the two sides of the mounting frame are respectively provided with fixing frames, the top and bottom of each fixing frame are provided with two mounting buckles, the inside of the mounting buckle is provided with a clamping block with a connecting frame, each group of connecting frames are fixedly connected with protective covers, one side of each clamping block away from the mounting buckle is provided with a limiting buckle, the bottom of the inner wall of the limiting buckle is fixedly connected with a partition plate, the two sides of the partition plate are provided with two supporting springs through two fixed discs, one end of each group of supporting springs is fixedly connected with a movable plate, the other side of each movable plate is fixedly connected with a supporting bolt, and the other side of each movable plate is provided with a supporting bolt.

4. The bifacial poly solar cell structure of claim 3, wherein, The two sides of the fixing frame are provided with two penetrating mounting grooves, and the protective cover is made of polymethyl methacrylate material.

5. The bifacial poly solar cell structure of claim 3, wherein, The bottom of the fixing frame is fixedly connected with a connecting buckle, and one side of the connecting buckle is threadedly connected with a mounting bolt.

6. The bifacial poly solar cell structure of claim 3, wherein, The two sides of the protective cover located above are provided with water guide strips, and the top of the water guide strip is provided with a drainage groove.

7. The bifacial poly solar cell structure of claim 1, wherein, The double-sided solar panel comprises a base layer, and the top and bottom of the base layer are provided with a passivation layer, and the other side of the passivation layer is provided with an electrode.

8. The bifacial poly solar cell structure of claim 7, wherein, The other side of the electrode is provided with an electric field layer, and the other side of the electric field layer is provided with an anti-reflection layer.

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