High-voltage MOS tube detection system of switching power supply

Abstract

The utility model relates to a high-voltage MOS tube detection system of a switching power supply, which comprises a test module, a sampling module, a control module, a display module and a power supply module, the test module is connected with the sampling module, and the control module is respectively connected with the sampling module, the display module and the power supply module; the test module comprises a high-voltage MOS tube VT1, the sampling module comprises a divider resistor R1 and a divider resistor R4, the divider resistor R1 and the divider resistor R4 are connected in series, a D pin of the high-voltage MOS tube VT1 is connected with the divider resistor R1, an S pin of the high-voltage MOS tube VT1 is connected with the divider resistor R4, the control module comprises a KST-51 development board, the sampling module further comprises an AD conversion unit, and the AD conversion unit is connected with the high-voltage MOS tube VT1. A voltage acquisition end of the AD conversion unit is connected between the divider resistor R1 and the divider resistor R4, an output end of the AD conversion unit is connected with a detection port of the KST-51 development board, and the power supply module is used for supplying power to the control module; according to the invention, the mistaken touch risk caused by probe connection and the time for testing the stress of the white box can be reduced, and the testing cost is reduced.

Description

Technical Field

[0001] This utility model relates to the field of MOSFET testing technology, specifically to a high-voltage MOSFET testing system for switching power supplies. Background Technology

[0002] High-voltage MOSFETs are frequently found in PFC, LLC, flyback, and forward topologies of switching power supplies. In white-box testing, when testing the stress of MOSFETs in switching power supply topologies, it is essential to use equipment such as differential probes, ordinary high-voltage probes, and oscilloscopes to test the voltage stress of MOSFETs in the high-voltage region. This can lead to increased testing costs, longer testing times, and increased safety risks. Utility Model Content

[0003] In view of this, the present invention addresses the deficiencies of the existing technology, and its main objective is to provide a low-cost, high-reliability, and high-efficiency high-voltage MOSFET detection system for switching power supplies.

[0004] To achieve the above objectives, the present invention adopts the following technical solution:

[0005] A high-voltage MOSFET testing system for a switching power supply includes a test module, a sampling module, a control module, a display module, and a power supply module. The test module is connected to the sampling module, and the control module is connected to the sampling module, the display module, and the power supply module. The test module includes a high-voltage MOSFET VT1. The sampling module is used to acquire the VDS voltage of the high-voltage MOSFET VT1. The sampling module includes voltage divider resistors R1 and R4 connected in series. The drain pin (D) of the high-voltage MOSFET VT1 is connected to the voltage divider resistor R1. The S-pin of the high-voltage MOSFET VT1 is connected to the voltage divider resistor R4. The sampling module includes an AD conversion unit, and the control module includes a KST-51 development board. The control module integrates the VDS voltage data collected by the sampling module, performs conversion calculations, and displays the converted data through the display module. The voltage acquisition terminal of the AD conversion unit is connected between the voltage divider resistor R1 and the voltage divider resistor R4, and the output terminal of the AD conversion unit is connected to the detection port of the KST-51 development board. The power supply module is used to power the control module.

[0006] As a preferred embodiment, voltage divider resistors R2 and R3 are connected in series between voltage divider resistors R1 and R4, and the voltage acquisition terminal of the AD conversion unit is connected between voltage divider resistors R3 and R4.

[0007] As a preferred embodiment, the S-pin of the high-voltage MOSFET VT1 is grounded.

[0008] As a preferred embodiment, the display module includes the display screen provided with the KST-51 development board.

[0009] As a preferred embodiment, the power supply module includes a 5V power supply unit, which is connected to the power supply port of the KST-51 development board.

[0010] As a preferred embodiment, the AD conversion unit includes a PCF8591 AD converter.

[0011] Compared with existing technologies, the aforementioned high-voltage MOSFET detection system for switching power supplies has significant advantages and beneficial effects. Specifically, as can be seen from the above technical solution, it mainly consists of a high-voltage MOSFET detection system for switching power supplies. The power supply module supplies power to the control module, which then controls the sampling module to collect the voltage of the high-voltage MOSFET. The system receives the digital voltage converted by the sampling module and displays it on the display module. It uses fewer electronic components and has lower costs, enabling rapid testing of the voltage of the high-voltage MOSFET without the need for differential probes or ordinary high-voltage probes. This reduces the risk of accidental contact caused by probe connection, reduces the time required for testing the white box stress, and lowers testing costs. It has the advantages of low cost, high reliability, and high efficiency. Attached Figure Description

[0012] Figure 1 This is a structural block diagram of an embodiment of the present utility model;

[0013] Figure 2 This is a circuit diagram of an embodiment of the present invention. Detailed Implementation

[0014] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments of the present utility model. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. All other embodiments obtained by those skilled in the art based on the embodiments of the present utility model without creative effort are within the protection scope of the present utility model.

[0015] It should be noted that when a component is said to be "fixed to" another component, it can be directly attached to the other component or there may be an intervening component. When a component is said to be "connected to" another component, it can be directly connected to the other component or there may be an intervening component. The terms "vertical," "horizontal," "left," "right," and similar expressions used in this document are for illustrative purposes only.

[0016] Please see Figures 1 to 2This illustration shows a high-voltage MOSFET detection system for a switching power supply according to an embodiment of the present invention. The system includes a test module, a sampling module, a control module, a display module, and a power supply module. The test module is connected to the sampling module, and the control module is connected to the sampling module, display module, and power supply module respectively. The test module includes a high-voltage MOSFET VT1 connected to a high-voltage switching power supply. The sampling module is used to acquire the VDS voltage of the high-voltage MOSFET VT1. The sampling module includes an AD conversion unit and a voltage divider resistor group consisting of four resistors R1, R2, R3, and R4 connected in series. The drain pin (D) of the high-voltage MOSFET VT1 is connected to the voltage divider resistor R1, and the sink pin (S) of the high-voltage MOSFET VT1 is connected to the voltage divider resistor R4 and grounded. The control module... The system includes a KST-51 development board, a display module with a built-in screen, a control module that integrates and converts the VDS voltage data collected by the sampling module, and displays the converted data through the display module. The sampling point is located between voltage divider resistors R3 and R4. The voltage acquisition terminal of the AD conversion unit is connected to the sampling point. The output terminal of the AD conversion unit is connected to the detection port of the KST-51 development board. The KST-51 development board is connected to the built-in display screen. The power supply module supplies power to the control module and includes a 5V power supply unit connected to the power supply port of the KST-51 development board. The 5V power supply unit uses a 5V adapter or a computer port. The AD conversion unit includes a PCF8591 AD converter.

[0017] Its working principle is as follows:

[0018] High-voltage MOSFET VT1 is connected to a high-voltage switching power supply. The sampling module is connected to the S and D pins of MOSFET VT1. A voltage divider resistor group, consisting of resistors R1, R2, and R3, along with resistor R4, divides the high voltage between the S and D pins, converting the voltage at the sampling point to a low voltage below 5V. The AD conversion unit acquires the voltage at the sampling point. The AD conversion unit receives the acquisition command from the microcontroller of the KST-51 development board via the I2C bus. After receiving the acquisition command, the AD conversion unit converts the sampled voltage data into a digital voltage and stores it in a register through the detection port of the KST-51 development board, waiting for the microcontroller to send a receive command. This AD conversion unit is a PCF8591 AD converter, which can communicate with the KST-51 development board via the I2C bus, converting the acquired analog voltage into a digital voltage and storing it in a register, waiting for the microcontroller to read it. The KST-51 development board has built-in buttons, LEDs, and a display screen. The KST-51 development board sends acquisition and reception commands through the buttons, allowing the AD conversion unit to acquire voltage and receive the digital voltage converted by the AD conversion unit. The read digital voltage is then processed and displayed on the display screen.

[0019] The aforementioned high-voltage MOSFET testing system for switching power supplies powers the control module via the power supply module. The control module then controls the sampling module to acquire the VDS voltage of the high-voltage MOSFET. The system receives the digital voltage converted by the sampling module and displays it on the display module. This system can quickly test the voltage of the high-voltage MOSFET without the need for differential probes or ordinary high-voltage probes, thereby reducing the risk of accidental contact caused by connecting probes, reducing the time required to test the white box stress, and lowering the testing cost.

[0020] It should be noted that this utility model is not limited to the above-described embodiments. Based on the inventive spirit of this utility model, those skilled in the art can make other changes, and these changes made based on the inventive spirit of this utility model should be included within the scope of protection claimed by this utility model.

Claims

1. A high-voltage MOSFET detection system for a switching power supply, characterized in that, It includes a testing module, a sampling module, a control module, a display module, and a power supply module. The testing module is connected to the sampling module, and the control module is connected to the sampling module, the display module, and the power supply module. The test module includes a high-voltage MOSFET VT1. The sampling module is used to acquire the VDS voltage of the high-voltage MOSFET VT1. The sampling module includes voltage divider resistors R1 and R4 connected in series. The drain (D) pin of the high-voltage MOSFET VT1 is connected to the voltage divider resistor R1, and the source (S) pin of the high-voltage MOSFET VT1 is connected to the voltage divider resistor R4. The control module includes a KST-51 development board. The sampling module also includes an AD conversion unit. The voltage acquisition terminal of the AD conversion unit is connected between the voltage divider resistors R1 and R4, and the output terminal of the AD conversion unit is connected to the detection port of the KST-51 development board. The power supply module is used to power the control module.

2. The high-voltage MOSFET detection system for a switching power supply as described in claim 1, characterized in that, A voltage divider resistor R2 and a voltage divider resistor R3 are connected in series between the voltage divider resistor R1 and the voltage divider resistor R4, and the voltage acquisition terminal of the AD conversion unit is connected between the voltage divider resistor R3 and the voltage divider resistor R4.

3. The high-voltage MOSFET detection system for a switching power supply as described in claim 1, characterized in that, The S-pin of the high-voltage MOSFET VT1 is grounded.

4. The high-voltage MOSFET detection system for a switching power supply as described in claim 1, characterized in that, The display module includes the display screen that comes with the KST-51 development board.

5. The high-voltage MOSFET detection system for a switching power supply as described in claim 1, characterized in that, The power supply module includes a 5V power supply unit, which is connected to the power supply port of the KST-51 development board.

6. The high-voltage MOSFET detection system for a switching power supply as described in claim 1, characterized in that, The AD conversion unit includes a PCF8591 AD converter.

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