Grid line structure, solar cell and solar cell module
The mesh structure composed of ring grid lines and circular nodes solves the problem of light shading effect in solar cells, improves photoelectric conversion efficiency and electrode stability, and reduces manufacturing complexity and cost.
Patent Information
- Application Number
- CN202422975383.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-29
- Publication Date
- 2025-11-11
- Estimated Expiration
- 2034-11-29
AI Technical Summary
The existing metal grid structure of solar cells has a significant light-blocking effect, which affects the power conversion efficiency.
The ring grid structure, consisting of multiple first ring grid lines and solid circular nodes, forms a mesh structure, reducing light shading and improving photoelectric conversion efficiency. It is then attached to the substrate using traditional processes such as screen printing or electroplating.
It effectively reduces light shading, improves photoelectric conversion efficiency, enhances electrode stability and durability, and reduces manufacturing complexity and cost.
Smart Images
Figure CN223540877U_ABST
Abstract
Description
Technical Field
[0001] This disclosure relates to the field of solar cell technology, and more specifically, to a grid structure, a solar cell, and a solar cell module. Background Technology
[0002] In solar cell design, the configuration of the metal grid lines has a crucial impact on its power conversion efficiency. The main function of the metal grid lines is to collect photogenerated carriers onto the electrodes while minimizing the obstruction of incident light. The design of the metal grid line pattern affects the efficiency of the solar cell.
[0003] In related technologies, the patterns of metal grid lines include stripes, grids, and honeycomb patterns, and these patterns generally exhibit significant light-blocking effects. Utility Model Content
[0004] The purpose of this disclosure is to provide a grid line structure, a solar cell, and a solar cell module to solve the technical problem of significant light shading effect in grid line structures.
[0005] To achieve the above objectives, this disclosure provides a grid structure, comprising: a current collection section including a plurality of first annular grid lines arranged in an array in the same plane, each of the first annular grid lines contacting an adjacent first annular grid line circumferentially; and a current discharge section including a solid circular node, wherein the outer diameter of the first annular grid lines is larger than the diameter of the circular node, the plurality of first annular grid lines are arranged in an array around the central axis of the circular node, and the circular node is conductively connected to the plurality of first annular grid lines arranged in an array around it, such that the circular node and the plurality of first annular grid lines arranged in an array around it form a conductive unit.
[0006] Optionally, each of the first annular grid lines overlaps with the adjacent first annular grid lines in the circumferential direction, and the circular node is tangent to the plurality of first annular grid lines arranged in an array around it.
[0007] Optionally, among a plurality of first annular grid lines circumferentially surrounding the same first annular grid line, adjacent first annular grid lines are spaced apart from each other.
[0008] Optionally, each of the circular nodes is surrounded by an array of four of the first annular grid lines.
[0009] Optionally, among a plurality of first annular grid lines that surround the same first annular grid line in the circumferential direction, two adjacent first annular grid lines overlap.
[0010] Optionally, each of the circular nodes is surrounded by an array of three of the first annular grid lines.
[0011] Optionally, the outer diameter of the first annular gate line is 7 mm to 12 mm, and / or the line width of the first annular gate line is 10 μm to 25 μm.
[0012] Optionally, the center distance between the first annular grid line and the adjacent first annular grid line along the circumferential direction is 0.75 to 0.8 times the outer diameter of the first annular grid line.
[0013] Optionally, each of the first annular grid lines is tangent to the adjacent first annular grid line in the circumferential direction, and the circular node is spaced apart from the plurality of first annular grid lines arranged in an array around it. The current collection section further includes: a second annular grid line, which is concentrically disposed outside the circular node and spaced apart from the circular node, and is tangent to the plurality of first annular grid lines arranged in an array around it; and a straight grid line connecting the second annular grid line and the circular node.
[0014] Optionally, the outer diameter of the second annular grid line is smaller than the outer diameter of the first annular grid line, but larger than the diameter of the circular node.
[0015] Optionally, the straight grid line extends from the point of tangency between the second annular grid line and the first annular grid line to the circular node.
[0016] Optionally, among a plurality of first annular grid lines circumferentially surrounding the same first annular grid line, adjacent first annular grid lines are spaced apart from each other.
[0017] Optionally, each of the circular nodes is surrounded by an array of four of the first annular grid lines.
[0018] Optionally, the current collection section further includes a third annular grid line, the outer diameter of which is smaller than the inner diameter of the second annular grid line, and the inner diameter of which is larger than the diameter of the circular node. The third annular grid line is concentrically disposed between the circular node and the second annular grid line, and is spaced apart from the circular node and the second annular grid line.
[0019] Optionally, multiple third annular grid lines are independently provided between the circular node and the second annular grid line, and the multiple third annular grid lines are concentrically arranged and spaced apart from each other.
[0020] Optionally, among a plurality of first annular grid lines circumferentially surrounding the same first annular grid line, two adjacent first annular grid lines are tangent to each other.
[0021] Optionally, each of the circular nodes is surrounded by an array of three of the first annular grid lines.
[0022] Optionally, the outer diameter of the first annular grid line is 7 mm to 12 mm, and / or the linewidth of the first annular grid line is 10 μm to 25 μm, and / or the outer diameter of the second annular grid line is 0.42 to 0.44 times the outer diameter of the first annular grid line, and / or the linewidth of the second annular grid line is 80 μm to 100 μm, and / or the linewidth of the straight grid line is 80 μm to 100 μm, and / or the diameter of the circular node is 240 μm to 300 μm.
[0023] Based on the above technical solutions, this disclosure also provides a solar cell, including the grid structure described in the above technical solutions.
[0024] Based on the above technical solutions, this disclosure also provides a solar cell module, including the solar cell described in the above technical solutions.
[0025] The grid structure provided by this disclosure includes an array of multiple first annular grid lines and multiple solid circular nodes. The mesh structure formed by the contact between the multiple first annular grid lines and the multiple circular nodes can create a uniform current collection path. Furthermore, the mesh structure with this pattern layout can effectively reduce light shading, thereby improving photoelectric conversion efficiency. In addition, the mesh structure composed of multiple first annular grid lines and multiple circular nodes has good symmetry and uniformity, which helps to more evenly distribute mechanical and thermal stresses, significantly improving the stability and durability of the electrode. Moreover, the mesh structure with the above pattern layout can be attached to the substrate using traditional screen printing or electroplating processes, greatly reducing the complexity and cost of the manufacturing process.
[0026] The solar cell provided by this disclosure has the same technical effect as the grid structure in the above technical solution. To avoid unnecessary repetition, it will not be described in detail here.
[0027] The solar cell module provided in this disclosure has the same technical effect as the solar cell in the above technical solution. To avoid unnecessary repetition, it will not be described in detail here.
[0028] Other features and advantages of this disclosure will be described in detail in the following detailed description section. Attached Figure Description
[0029] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings:
[0030] Figure 1 A first embodiment of the gate line structure in this disclosure is shown;
[0031] Figure 2 yes Figure 1 A magnified view of a portion of the image;
[0032] Figure 3 A partially enlarged view of a second embodiment of the gate line structure in this disclosure is shown;
[0033] Figure 4 A third embodiment of the gate line structure in this disclosure is shown;
[0034] Figure 5 yes Figure 4 A magnified view of a portion of the image;
[0035] Figure 6 A partially enlarged view of a fourth embodiment of the gate line structure in this disclosure is shown;
[0036] Figure 7 A partially enlarged view of the fifth embodiment of the gate line structure in this disclosure is shown.
[0037] Explanation of reference numerals in the attached figures
[0038] 100 - substrate, 200 - gate line structure
[0039] 1-Current collection section, 11-First annular grid line, 12-Second annular grid line, 13-Third annular grid line, 14-Straight grid line,
[0040] 2-Current output section, 21-Circular node. Detailed Implementation
[0041] The specific embodiments of this disclosure will be described in detail below with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are for illustration and explanation only and are not intended to limit this disclosure.
[0042] In this disclosure, unless otherwise stated, directional terms such as "inner" and "outer" refer to the inner and outer contours of the corresponding component itself. The terms "first," "second," etc., used in this disclosure are for distinguishing one element from another and do not indicate sequence or importance. Furthermore, when the following description relates to the accompanying drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.
[0043] According to a specific embodiment of this disclosure, a grid line structure 200 is provided, with reference to... Figures 1 to 7 As shown, the gate structure 200 can be attached to the surface of the substrate 100.
[0044] The gate structure 200 may include a current collection section 1 and a current output section 2. The current collection section 1 may include a plurality of first annular gate lines 11, which may be arranged in an array on the surface of the substrate 100. Each first annular gate line 11 may be in contact with an adjacent first annular gate line 11 in the circumferential direction. The current output section 2 may include a solid circular node 21. The outer diameter of the first annular gate line 11 may be larger than the diameter of the circular node 21. The plurality of first annular gate lines 11 may be arranged in an array around the central axis of the circular node 21. The circular node 21 may be electrically connected to the plurality of first annular gate lines 11 arranged in an array around it, so that the circular node 21 and the plurality of first annular gate lines 11 arranged in an array around it form a complete conductive unit.
[0045] Through the above technical solution, the gate structure 200 provided in this disclosure includes an array of multiple first annular gate lines 11 and multiple solid circular nodes 21. The mesh structure formed by the multiple first annular gate lines 11 and multiple circular nodes 21 in contact with each other can form a uniform current collection path, and the mesh structure with such a pattern layout can effectively reduce light shading, thereby improving photoelectric conversion efficiency. In addition, the mesh structure composed of multiple first annular gate lines 11 and multiple circular nodes 21 has good symmetry and uniformity, which helps to more uniformly distribute mechanical stress and thermal stress, significantly improving the stability and durability of the electrode. Furthermore, the mesh structure with the above pattern layout can be attached to the substrate 100 using conventional screen printing or electroplating processes, greatly reducing the complexity and cost of the manufacturing process.
[0046] In specific embodiments of this disclosure, the circular node 21 and the first annular grid line 11 can be electrically connected through direct contact, or they can be electrically connected through other grid lines connected between the circular node 21 and the first annular grid line 11.
[0047] Alternatively, the circular node 21 can be tangent to the first annular gate line 11 to achieve a conductive connection between the two. Specifically, refer to... Figures 1 to 3As shown, each first annular gate line 11 can overlap with an adjacent first annular gate line 11 circumferentially. That is, each first annular gate line 11 can intersect with an adjacent first annular gate line 11 circumferentially to form two intersection points. In this case, the gap between adjacent first annular gate lines 11 is reduced, and the circular node 21 can be accommodated in the gap and can be directly tangent to the multiple first annular gate lines 11 arrayed around it to achieve a conductive connection between the circular node 21 and the first annular gate lines 11. In this case, a circular node 21 and multiple first annular gate lines 11 arrayed around the circular node 21 circumferentially can form a conductive unit. In the same conductive unit, the current collected by the multiple first annular gate lines 11 can be directly converged to the circular node 21 through the tangent point.
[0048] As a first embodiment of this disclosure, reference is made to Figure 1 and Figure 2 As shown, among the multiple first annular grid lines 11 that surround the same first annular grid line 11 circumferentially, adjacent first annular grid lines 11 can be spaced apart from each other. In this case, it is possible to avoid both an excessive number of first annular grid lines 11 resulting in an excessively large light-blocking area and an insufficient number of first annular grid lines 11 affecting the current collection effect.
[0049] As a preferred embodiment of the first embodiment, refer to Figure 1 and Figure 2 As shown, four first annular grid lines 11 can be arranged in an array around each circular node 21.
[0050] As a second embodiment of this disclosure, reference is made to Figure 3 As shown, among the multiple first annular grid lines 11 that surround the same first annular grid line 11 circumferentially, adjacent first annular grid lines 11 can overlap, that is, adjacent first annular grid lines 11 can intersect to form two intersection points. In this embodiment, the outer diameter of the first annular grid line 11 can be slightly larger than the outer diameter of the first annular grid line 11 in the first embodiment, so as to avoid the light-blocking area being too large due to the increase in the number of first annular grid lines 11.
[0051] As a preferred embodiment of the second embodiment, refer to Figure 3 As shown, three first annular grid lines 11 can be arranged in an array around each circular node 21.
[0052] In the first and second embodiments, the outer diameter of the first annular grid line 11 can be 7 mm to 12 mm, and / or the line width of the first annular grid line 11 can be 10 μm to 25 μm, and / or the center distance between the first annular grid line 11 and the adjacent first annular grid line 11 in the circumferential direction can be 0.75 times to 0.8 times the outer diameter of the first annular grid line 11, so as to balance the light transmission effect and the current collection effect.
[0053] If the outer diameter of the first annular gate line 11 is less than 7 mm, and / or the line width of the first annular gate line 11 is greater than 25 μm, and / or the center distance is less than 0.75 times the outer diameter of the first annular gate line 11, the light-shielding area of the pattern covering the substrate 100 will be too large, which is not conducive to improving the photoelectric conversion efficiency. If the outer diameter of the first annular gate line 11 is greater than 12 mm, and / or the line width of the first annular gate line 11 is less than 10 μm, and / or the center distance is greater than 0.8 times the outer diameter of the first annular gate line 11, the current collection effect will be affected.
[0054] In the first and second embodiments, the outer diameter of the first annular grid line 11 is preferably 12 mm, the line width of the first annular grid line 11 is preferably 25 μm, and the center distance between the first annular grid line 11 and the adjacent first annular grid line 11 along the circumferential direction is preferably 0.75 times the outer diameter of the first annular grid line 11.
[0055] Table 1 below shows the changes in various parameters of the conductive unit with the outer diameter and linewidth of the first annular gate line 11 in the first embodiment, when the area of the substrate 100 is 210mm*105mm and the center distance between the first annular gate line 11 and the adjacent first annular gate line 11 along the circumferential direction is 0.75 times the outer diameter of the first annular gate line 11.
[0056] Table 1
[0057]
[0058] Alternatively, the circular node 21 can be spaced apart from the first annular gate line 11, and the two can be electrically connected by other gate lines connected before them. Specifically, refer to Figures 4 to 7 As shown, each first annular grid line 11 can be tangent to the adjacent first annular grid line 11 along the circumferential direction, that is, each first annular grid line 11 can be tangent to the adjacent first annular grid line 11 along the circumferential direction to form an intersection point, and the circular node 21 can be spaced apart from the multiple first annular grid lines 11 arranged in an array around it.
[0059] In order to make the first annular grid line 11 in the same conductive unit conductively connected to the circular node 21, the current collection section 1 may also include a second annular grid line 12 and a straight grid line 14.
[0060] The outer diameter of the second annular gate line 12 can be smaller than the outer diameter of the first annular gate line 11 and larger than the diameter of the circular node 21. The second annular gate line 12 can be concentrically fitted on the outside of the circular node 21 and spaced apart from the circular node 21. The second annular gate line 12 can be tangent to the multiple first annular gate lines 11 arrayed around it, so that the current collected by the multiple first annular gate lines 11 in the conductive unit can be gathered on the second annular gate line 12.
[0061] The linear gate line 14 can be connected to the inside of the second annular gate line 12 and can extend from the second annular gate line 12 to the circular node 21 to guide the current collected on the second annular gate line 12 to the circular node 21.
[0062] To improve the current conduction efficiency of the linear grid line 14, reference Figures 4 to 7 As shown, the straight grid line 14 can be extended from the tangent point of the second annular grid line 12 and the first annular grid line 11 to the circular node 21.
[0063] As a third embodiment of this disclosure, reference is made to Figure 4 and Figure 5 As shown, among the multiple first annular grid lines 11 that surround the same first annular grid line 11 circumferentially, adjacent first annular grid lines 11 can be spaced apart from each other. In this case, it is possible to avoid both an excessive number of first annular grid lines 11 resulting in an excessively large light-blocking area and an insufficient number of first annular grid lines 11 affecting the current collection effect.
[0064] As a preferred embodiment of the third embodiment, refer to Figure 4 and Figure 5 As shown, four first annular grid lines 11 can be arranged in an array around each circular node 21.
[0065] As a fourth embodiment of this disclosure, reference is made to Figure 6 As shown, based on the third embodiment described above, the current collection section 1 may further include a third annular grid line 13. The outer diameter of the third annular grid line 13 may be smaller than the inner diameter of the second annular grid line 12, and the inner diameter of the third annular grid line 13 may be larger than the diameter of the circular node 21. The third annular grid line 13 may be concentrically arranged between the circular node 21 and the second annular grid line 12, and spaced apart from the circular node 21 and the second annular grid line 12. The third annular grid line 13 can enhance the current collection effect, thereby improving the efficiency of current collection and conduction.
[0066] In a preferred embodiment of the fourth embodiment, multiple third annular grid lines 13 can be independently provided between the circular node 21 and the second annular grid line 12. The multiple third annular grid lines 13 can be concentrically arranged and spaced apart from each other. The multiple third annular grid lines 13 can further enhance the current collection effect, thereby enhancing the efficiency of current collection and conduction.
[0067] As a fifth embodiment of this disclosure, reference is made to Figure 7 As shown, among the multiple first annular grid lines 11 that circumferentially surround the same first annular grid line 11, two adjacent first annular grid lines 11 can be tangent to each other, that is, two adjacent first annular grid lines 11 are tangent to each other and form an intersection point. In this embodiment, the outer diameter of the first annular grid line 11 can be slightly larger than the outer diameter of the first annular grid line 11 in the third and fourth embodiments, so as to avoid the light-blocking area being too large due to the increase in the number of first annular grid lines 11.
[0068] As a preferred embodiment of the fifth embodiment, refer to Figure 7 As shown, three first annular grid lines 11 can be arranged in an array around each circular node 21.
[0069] In the third, fourth, and fifth embodiments, the outer diameter of the first annular gate line 11 can be 7 mm to 12 mm, and / or the linewidth of the first annular gate line 11 can be 10 μm to 25 μm, and / or the outer diameter of the second annular gate line 12 can be 0.42 to 0.44 times the outer diameter of the first annular gate line 11, and / or the linewidths of the second annular gate line 12 and the third annular gate line 13 can be 80 μm to 100 μm, and / or the linewidth of the straight gate line 14 can be 80 μm to 100 μm, and / or the diameter of the circular node 21 can be 240 μm to 300 μm, so as to balance the light transmission effect and the current collection effect.
[0070] If the outer diameter of the first annular gate line 11 is less than 7 mm, and / or the linewidth of the first annular gate line 11 is greater than 25 μm, and / or the outer diameter of the second annular gate line 12 is less than 0.42 times the outer diameter of the first annular gate line 11, and / or the linewidths of the second annular gate line 12 and the third annular gate line 13 are greater than 100 μm, and / or the linewidth of the straight gate line 14 is greater than 100 μm, and / or the diameter of the circular node 21 is greater than 300 μm, then the light-shielding area of the pattern covering the substrate 100 will be too large, which will not... This is beneficial for improving photoelectric conversion efficiency; however, if the outer diameter of the first annular grid line 11 is greater than 12 mm, and / or the linewidth of the first annular grid line 11 is less than 10 μm, and / or the outer diameter of the second annular grid line 12 is greater than 0.44 times the outer diameter of the first annular grid line 11, and / or the linewidths of the second annular grid line 12 and the third annular grid line 13 are less than 80 μm, and / or the linewidth of the straight grid line 14 is less than 80 μm, and / or the diameter of the circular node 21 is less than 240 μm, then the current collection effect will be affected.
[0071] In the third, fourth, and fifth embodiments, the outer diameter of the first annular gate line 11 is preferably 12 mm, the line width of the first annular gate line 11 is preferably 25 μm, the outer diameter of the second annular gate line 12 is preferably 5 mm, the outer diameter of the third annular gate line 13 is preferably 4 mm, when there are multiple third annular gate lines 13 in the same conductive unit, the outer diameter of the one with the larger outer diameter is preferably 4 mm, the outer diameter of the one with the smaller outer diameter is preferably 3 mm, the line width of the second annular gate line 12 and the third annular gate line 13 is preferably 100 μm, the line width of the straight gate line 14 is preferably 100 μm, and the diameter of the circular node 21 is preferably 140 μm.
[0072] In summary of the specific embodiments disclosed herein, the gate structure 200 can be made of metal materials such as copper or silver, so that the gate structure 200 has good conductivity and cost advantages.
[0073] Based on the above technical solutions, this disclosure also provides a solar cell, which may include the grid structure 200 in the above technical solutions.
[0074] The solar cell provided by this disclosure has the same technical effect as the grid structure 200 in the above technical solution. To avoid unnecessary repetition, it will not be described in detail here.
[0075] Based on the above technical solutions, this disclosure also provides a solar cell module, which may include the solar cells described in the above technical solutions.
[0076] The solar cell module provided in this disclosure has the same technical effect as the solar cell in the above technical solution. To avoid unnecessary repetition, it will not be described in detail here.
[0077] The preferred embodiments of this disclosure have been described in detail above with reference to the accompanying drawings. However, this disclosure is not limited to the specific details of the above embodiments. Within the scope of the technical concept of this disclosure, various simple modifications can be made to the technical solutions of this disclosure, and these simple modifications all fall within the protection scope of this disclosure.
[0078] It should also be noted that the various specific technical features described in the above specific embodiments can be combined in any suitable manner without contradiction. In order to avoid unnecessary repetition, this disclosure will not describe the various possible combinations separately.
[0079] Furthermore, various different embodiments of this disclosure can be combined in any way, as long as they do not violate the spirit of this disclosure, they should also be regarded as the content disclosed in this disclosure.
Claims
1. A grid line structure, characterized in that, include: The current collection section includes multiple first annular grid lines arranged in an array in the same plane, each first annular grid line contacting an adjacent first annular grid line circumferentially. The current-deriving section includes a solid circular node. The outer diameter of the first annular gate line is larger than the diameter of the circular node. A plurality of the first annular gate lines are arranged in an array around the central axis of the circular node. The circular node can be electrically connected to the plurality of the first annular gate lines arranged in an array around it, so that the circular node and the plurality of the first annular gate lines arranged in an array around it form a conductive unit.
2. The grid line structure according to claim 1, characterized in that, Each of the first annular grid lines overlaps with the adjacent first annular grid lines in the circumferential direction, and the circular node is tangent to the plurality of first annular grid lines arranged in an array around it.
3. The grid line structure according to claim 2, characterized in that, Among a plurality of first annular grid lines that are circumferentially encircled around the same first annular grid line, adjacent first annular grid lines are spaced apart from each other.
4. The grid line structure according to claim 3, characterized in that, Each of the circular nodes is surrounded by an array of four of the first annular grid lines.
5. The grid line structure according to claim 2, characterized in that, Among the plurality of first annular grid lines that surround the same first annular grid line in the circumferential direction, two adjacent first annular grid lines overlap.
6. The grid line structure according to claim 5, characterized in that, Each of the circular nodes is surrounded by an array of three of the first annular grid lines.
7. The grid line structure according to any one of claims 2 to 6, characterized in that, The outer diameter of the first annular gate line is 7 mm to 12 mm, and / or the line width of the first annular gate line is 10 μm to 25 μm.
8. The grid line structure according to claim 7, characterized in that, The center distance between the first annular grid line and the adjacent first annular grid line along the circumferential direction is 0.75 to 0.8 times the outer diameter of the first annular grid line.
9. The grid line structure according to claim 1, characterized in that, Each of the first annular grid lines is tangent to the adjacent first annular grid line in the circumferential direction, and the circular node can be spaced apart from the plurality of first annular grid lines arranged in an array around it. The current collection section also includes: A second annular grid line is concentrically disposed outside the circular node and spaced apart from the circular node. The second annular grid line is tangent to a plurality of first annular grid lines arranged in an array around it. A straight grid line connects the second annular grid line and the circular node.
10. The grid line structure according to claim 9, characterized in that, The outer diameter of the second annular grid line is smaller than the outer diameter of the first annular grid line, but larger than the diameter of the circular node.
11. The grid line structure according to claim 9, characterized in that, The straight grid line extends from the point of tangency between the second annular grid line and the first annular grid line to the circular node.
12. The grid line structure according to claim 9, characterized in that, Among a plurality of first annular grid lines that are circumferentially encircled around the same first annular grid line, adjacent first annular grid lines are spaced apart from each other.
13. The grid line structure according to claim 12, characterized in that, Each of the circular nodes is surrounded by an array of four of the first annular grid lines.
14. The grid line structure according to claim 9, characterized in that, The current collection section further includes a third annular grid line, the outer diameter of which is smaller than the inner diameter of the second annular grid line, and the inner diameter of which is larger than the diameter of the circular node. The third annular grid line is concentrically disposed between the circular node and the second annular grid line, and is spaced apart from the circular node and the second annular grid line.
15. The grid line structure according to claim 14, characterized in that, Multiple third annular grid lines are independently provided between the circular node and the second annular grid line, and the multiple third annular grid lines are concentrically arranged and spaced apart from each other.
16. The grid line structure according to claim 9, characterized in that, Among the plurality of first annular grid lines that are circumferentially encircled around the same first annular grid line, two adjacent first annular grid lines are tangent to each other.
17. The grid line structure according to claim 16, characterized in that, Each of the circular nodes is surrounded by an array of three of the first annular grid lines.
18. The grid line structure according to any one of claims 9 to 17, characterized in that, The outer diameter of the first annular grid line is 7 mm to 12 mm, and / or, The linewidth of the first annular gate line is 10 μm to 25 μm, and / or, The outer diameter of the second annular grid line is 0.42 to 0.44 times the outer diameter of the first annular grid line, and / or, The linewidth of the second annular gate line is 80 μm to 100 μm, and / or, The linewidth of the linear gate lines is 80 μm to 100 μm, and / or, The diameter of the circular node is 240 μm to 300 μm.
19. A solar cell, characterized in that, Includes the gate structure according to any one of claims 1 to 18.
20. A solar cell module, characterized in that, Includes the solar cell of claim 19.