GaN-based multi-light-area LED chip and illumination lamp
By setting annular isolation grooves on GaN-based light emitters to form multiple sub-light-emitting regions, the problem of complex beam transformation structures in existing lighting fixtures is solved, achieving the effects of cost reduction and size reduction.
Patent Information
- Application Number
- CN202422989516.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-04
- Publication Date
- 2025-11-11
- Estimated Expiration
- 2034-12-04
AI Technical Summary
Existing lighting fixtures have complex structures when performing beam transformation, resulting in high costs, large size, and heavy weight.
By using GaN-based multi-area LED chips, multiple sub-light-emitting regions are formed by setting an annular isolation groove on the GaN-based light-emitting body. Each sub-light-emitting region emits a beam of light at a different angle, thereby realizing beam transformation.
The simplified beam transformation structure reduces the cost of lighting fixtures and decreases their size and weight.
Smart Images
Figure CN223540881U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of lighting fixture technology, and in particular to a GaN-based multi-area LED chip and lighting fixture. Background Technology
[0002] In mobile lighting, to meet more lighting needs, lighting fixtures often feature beam switching capabilities, that is, switching between different beams to satisfy different lighting requirements.
[0003] Currently, there are two main methods for beam transformation in lighting fixtures. One method involves changing the distance between the lens and the light source. This allows for beam transformation by altering the distance between the lens and the light source. Another method involves placing multiple LEDs at different positions on the same focal plane within the light source. This allows for beam transformation by driving the LEDs at different positions on the same focal plane. While both methods achieve beam transformation, their complex structures result in high costs, large size, and significant weight for the lighting fixtures.
[0004] Therefore, existing technologies still need to be improved and developed. Utility Model Content
[0005] In view of the shortcomings of the prior art, the purpose of this utility model is to provide a GaN-based multi-area LED chip and lighting fixture, so as to solve the problem that the structure of the beam conversion method used in the existing lighting fixture is complex, resulting in high cost, large size and weight of the lighting fixture.
[0006] The technical solution adopted by this utility model to solve its technical problem is: to provide a GaN-based multi-light-region LED chip, including: a substrate and a GaN-based light emitter disposed on the substrate;
[0007] At least one annular isolation groove is formed on the GaN-based light emitter. The annular isolation groove penetrates the upper and lower surfaces of the GaN-based light emitter. When a plurality of annular isolation grooves are formed, the outlines of the orthographic projections of the plurality of annular isolation grooves on the substrate gradually decrease and are sequentially nested from the inside to the outside.
[0008] In this context, the region adjacent to the wall of any annular isolation groove on the GaN-based light emitter is a sub-light-emitting region, and each sub-light-emitting region emits a beam of light at a certain angle when it is lit.
[0009] In a further embodiment of this invention, the GaN-based light emitter includes: a metal electrode and, from bottom to top, an N-shaped gallium nitride layer, a multilayer quantum well layer, a P-shaped gallium nitride layer, and a transparent conductive layer disposed on the substrate;
[0010] Wherein, the upper surface of the transparent conductive layer is the upper surface of the GaN-based light emitter, and the lower surface of the N-shaped gallium nitride layer is the lower surface of the GaN-based light emitter;
[0011] The positive electrode in the metal electrode is connected to the transparent conductive layer, and the negative electrode in the metal electrode is connected to the N-shaped gallium nitride layer.
[0012] A further feature of this invention is that when the annular isolation groove is provided, the light power density of the sub-light-emitting region adjacent to the inner wall of the annular isolation groove is the highest.
[0013] A further feature of this invention is that when several annular isolation grooves are provided, the light power density of the sub-light-emitting region adjacent to the inner wall of the innermost annular isolation groove is the highest.
[0014] In a further improvement of this invention, when several annular isolation grooves are provided, the light power density of the sub-light-emitting region gradually decreases from the inside to the outside.
[0015] A further feature of this invention is that the light power density of the sub-emitting region with the highest light power density is greater than 6 A / mm². 2 .
[0016] In a further embodiment of this invention, the annular isolation groove is either a circular annular isolation groove or a polygonal annular isolation groove.
[0017] This utility model also provides a lighting fixture, comprising: a housing having a receiving chamber and a GaN-based multi-region LED chip as described above.
[0018] In a further embodiment of this invention, the lighting fixture also includes a positive lens, which is disposed on the housing and through which the light emitted from the GaN-based multi-area LED chip is emitted.
[0019] The beneficial effects of this utility model are as follows:
[0020] This utility model discloses a GaN-based multi-area LED chip and lighting fixture. The GaN-based multi-area LED chip includes: a substrate and a GaN-based light emitter disposed on the substrate; the GaN-based light emitter has at least one annular isolation groove, which penetrates the upper and lower surfaces of the GaN-based light emitter. When a plurality of annular isolation grooves are provided, the outlines of the orthographic projections of the plurality of annular isolation grooves on the substrate gradually decrease and are sequentially nested from the inside to the outside; wherein, the area adjacent to the groove wall of any annular isolation groove on the GaN-based light emitter is a sub-light-emitting area, and each sub-light-emitting area emits a beam of light at a corresponding angle when lit. In this utility model, at least one annular isolation groove is provided in the GaN-based light emitter. The area adjacent to the groove wall of any annular isolation groove is a sub-light-emitting area. When each sub-light-emitting area is lit, it emits a beam of light at a certain angle. Therefore, the beam can be changed by lighting different sub-light-emitting areas. This realizes the beam change through a GaN-based multi-area LED chip. The structure is simple, which reduces the cost of the lighting fixture and makes the size and weight of the lighting fixture smaller. Attached Figure Description
[0021] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on the figures shown in these drawings without creative effort.
[0022] Figure 1 This is a top view of the GaN-based multi-region LED chip of this utility model.
[0023] Figure 2 This is a flowchart of the method for fabricating GaN-based multi-region LED chips according to this invention.
[0024] The markings in the attached figure are as follows: 100, substrate; 200, GaN-based light emitter; 201, annular isolation groove; 202, sub-light-emitting region; 203, metal electrode. Detailed Implementation
[0025] To provide a clearer understanding of the technical features, objectives, and effects of this utility model, the specific embodiments of this utility model are now described in detail with reference to the accompanying drawings. In the following description, it should be understood that the orientations or positional relationships indicated by terms such as "front," "rear," "upper," "lower," "left," "right," "longitudinal," "horizontal," "vertical," "horizontal," "top," "bottom," "inner," "outer," "head," and "tail" are based on the orientations or positional relationships shown in the accompanying drawings, and are constructed and operated in a specific orientation. They are only for the convenience of describing this technical solution and do not indicate that the device or component referred to must have a specific orientation; therefore, they should not be construed as limitations on this utility model.
[0026] like Figure 1 As shown, this utility model provides a GaN-based multi-area LED chip, which may include a substrate 100 and a GaN-based light emitter 200 disposed on the substrate 100. At least one annular isolation groove 201 is formed on the GaN-based light emitter 200, the annular isolation groove 201 penetrating the upper and lower surfaces of the GaN-based light emitter 200. When a plurality of annular isolation grooves 201 are formed, the outline of the orthographic projection of the plurality of annular isolation grooves 201 on the substrate 100 gradually decreases and is formed sequentially from the inside to the outside. The area adjacent to the groove wall of any annular isolation groove 201 on the GaN-based light emitter 200 is a sub-light-emitting area 202, and each sub-light-emitting area 202 corresponds to an emitted light beam at a certain angle. The fact that each sub-light-emitting area 202 corresponds to an emitted light beam at a certain angle means that the angle of the emitted light beam is different when different sub-light-emitting areas 202 are lit.
[0027] Specifically, when the annular isolation trench 201 is formed, a circular trench penetrating the upper and lower surfaces of the GaN-based light emitter 200 is etched using laser or ion etching methods. That is, an annular isolation trench 201 penetrates the upper and lower surfaces of the GaN-based light emitter 200. The annular isolation trench 201 forms several sub-light-emitting regions 202 on the GaN-based light emitter 200. The number of sub-light-emitting regions 202 formed is related to the number of annular isolation trenches 201. For example, when one annular isolation trench 201 is formed, two sub-light-emitting regions 202 are formed on the GaN-based light emitter 200, each being a region adjacent to the trench wall of the annular isolation trench 201. As another example, when two annular isolation trenches 201 are formed, three sub-light-emitting regions are formed on the GaN-based light emitter 200. The three sub-light-emitting regions 202 are the two regions adjacent to the wall of the innermost annular isolation groove 201 and the region adjacent to the wall of the outermost annular isolation groove 201 (the innermost and outermost annular isolation grooves 201 share a common adjacent region, and the common adjacent region of two annular isolation grooves 201 constitutes one sub-light-emitting region 202; therefore, when two annular isolation grooves 201 are provided, three sub-light-emitting regions 202 are formed on the GaN-based light-emitting body 200). The purpose of extending the annular isolation grooves 201 through the upper and lower surfaces of the GaN-based light-emitting body 200 is to allow each sub-light-emitting region 202 to be illuminated independently.
[0028] It should be noted that the wall of the annular isolation groove 201 includes the inner wall of the annular isolation groove 201 and the outer wall of the annular isolation groove 201.
[0029] In this embodiment, at least one annular isolation groove 201 is provided in the GaN-based light emitter 200. The area adjacent to the groove wall of any annular isolation groove 201 is a sub-light-emitting area 202. When each sub-light-emitting area 202 is lit, it emits a beam of light at a certain angle. Therefore, the beam can be changed by lighting different sub-light-emitting areas 202, realizing the beam change through a GaN-based multi-area LED chip. The structure is simple, which reduces the cost of the lighting fixture and makes the size and weight of the lighting fixture smaller.
[0030] In some embodiments, the GaN-based light emitter 200 may include a metal electrode 203 and, from bottom to top, an N-shaped gallium nitride layer, a multilayer quantum well layer, a P-shaped gallium nitride layer, and a transparent conductive layer disposed on a substrate 100; wherein, the upper surface of the transparent conductive layer is the upper surface of the GaN-based light emitter 200, and the lower surface of the N-shaped gallium nitride layer is the lower surface of the GaN-based light emitter 200; the positive electrode in the metal electrode 203 is connected to the transparent conductive layer, and the negative electrode in the metal electrode 203 is connected to the N-shaped gallium nitride layer.
[0031] Specifically, the substrate 100 can be a sapphire substrate 100. On the sapphire substrate 100, an N-shaped gallium nitride layer, a multilayer quantum well layer, a P-shaped gallium nitride layer, and a transparent conductive layer are sequentially grown using MOCVD (Metal-Organic Chemical Vapor Deposition) technology. When the annular isolation trench 201 is formed, the annular isolation trench 201 penetrates the upper surface of the transparent conductive layer and the lower surface of the N-shaped gallium nitride layer.
[0032] Furthermore, when setting the metal electrode 203, the metal electrode 203 is fabricated by vapor deposition of a metal film. The metal electrode 203 includes a positive electrode and a negative electrode. The metal electrode 203 can be fabricated in any area of the GaN-based multi-region LED chip that does not affect the normal operation of the GaN-based multi-region LED chip. For example, the metal electrode 203 can be fabricated on the bottom of the substrate 100 (the side opposite to the side where the N-shaped gallium nitride layer is located). Of course, the metal electrode 203 can also be fabricated on the substrate 100 and located on the same side as the N-shaped gallium nitride layer. Those skilled in the art can determine the fabrication location of the metal electrode 203 according to the actual situation, and no further limitations are imposed here.
[0033] Furthermore, during the fabrication of the metal electrode 203, a set of positive and negative electrodes can be fabricated for each sub-light-emitting region 202, or all sub-light-emitting regions 202 can share a negative electrode, and each sub-light-emitting region 202 can have a corresponding positive electrode. As long as each sub-light-emitting region 202 can be independently lit, those skilled in the art can determine the fabrication method of the positive and negative electrodes in the metal electrode 203 according to the actual situation, without imposing further limitations here.
[0034] In this embodiment, the positive electrode is connected to the transparent conductive layer, and the negative electrode is connected to the N-shaped gallium nitride layer.
[0035] In some embodiments, when an annular isolation groove is provided, the light power density of the sub-light-emitting region 202 adjacent to the inner wall of the annular isolation groove is the largest.
[0036] In this embodiment, since the sub-light-emitting region 202 with the highest optical power density is the sub-light-emitting region 202 adjacent to the inner wall of the annular isolation groove, when it is necessary to illuminate a distant target with a small field of view, the sub-light-emitting region 202 with the highest optical power density can be lit to emit a beam of light with a small field of view to illuminate the target.
[0037] In some embodiments, when a plurality of annular isolation grooves are provided, the light power density of the sub-light-emitting region 202 adjacent to the inner wall of the innermost annular isolation groove is the largest.
[0038] In this embodiment, since the sub-light-emitting region 202 with the highest optical power density is the sub-light-emitting region 202 adjacent to the innermost annular isolation groove wall, when it is necessary to illuminate a distant target with a small field of view, the sub-light-emitting region 202 with the highest optical power density can be lit to emit a beam of light with a small field of view to illuminate the target.
[0039] Furthermore, when several annular isolation grooves are provided, the light power density of the sub-light-emitting region 202 gradually decreases from the inside to the outside.
[0040] In this embodiment, since each sub-light-emitting region 202 emits a beam of light at a certain angle when it is lit, as the light power density of the sub-light-emitting region 202 gradually decreases from the inside to the outside, lighting up different sub-light-emitting regions 202 will result in beams of light with different brightness and different angles.
[0041] Furthermore, the light power density of the sub-emitting region 202 with the highest light power density is greater than 6 A / mm². 2 .
[0042] Specifically, the light power density of the sub-emitting region 202 with the highest light power density can be 6.5 A / mm². 2 7A / mm 2 9A / mm 2 12A / mm 2 When determining the sub-emitting region 202 with the highest optical power density, those skilled in the art can determine it according to the actual situation, and no further restrictions are imposed here.
[0043] In some embodiments, when the annular isolation groove 201 is opened, it may be an annular isolation groove 201 in the shape of a circle or a polygon.
[0044] In this embodiment, as Figure 1 As shown, the annular isolation groove 201 can be a circular annular isolation groove 201. When there are several annular isolation grooves 201, the inner diameter of the circular isolation groove gradually increases from the inside to the outside.
[0045] Of course, the annular isolation groove 201 can also be a square annular isolation groove 201, an equilateral triangular annular isolation groove 201, or a rhomboid annular isolation groove 201.
[0046] Therefore, when an annular isolation groove 201 is formed on the GaN-based light emitter 200, the annular isolation groove 201 can be formed according to actual needs, thereby broadening the applicability of the GaN-based multi-light-region LED chip.
[0047] In some embodiments, the present invention also provides a lighting fixture, which may include a housing having a receiving chamber and the aforementioned GaN-based multi-region LED chip.
[0048] The GaN-based multi-area LED chip may include a substrate 100 and a GaN-based light emitter 200 disposed on the substrate 100. At least one annular isolation groove 201 is formed on the GaN-based light emitter 200. The annular isolation groove 201 penetrates the upper and lower surfaces of the GaN-based light emitter 200. When multiple annular isolation grooves 201 are formed, the outline of the orthographic projection of the multiple annular isolation grooves 201 on the substrate 100 gradually decreases and is formed sequentially from the inside to the outside. The area adjacent to the groove wall of any annular isolation groove 201 on the GaN-based light emitter 200 is a sub-light-emitting area 202, and each sub-light-emitting area 202 corresponds to an emitted light beam at a certain angle. The fact that each sub-light-emitting area 202 corresponds to an emitted light beam at a certain angle means that the angle of the emitted light beam is different when different sub-light-emitting areas 202 are lit.
[0049] Specifically, when the annular isolation trench 201 is formed, a circular trench penetrating the upper and lower surfaces of the GaN-based light emitter 200 is etched using laser or ion etching methods. That is, an annular isolation trench 201 penetrates the upper and lower surfaces of the GaN-based light emitter 200. The annular isolation trench 201 forms several sub-light-emitting regions 202 on the GaN-based light emitter 200. The number of sub-light-emitting regions 202 formed is related to the number of annular isolation trenches 201. For example, when one annular isolation trench 201 is formed, two sub-light-emitting regions 202 are formed on the GaN-based light emitter 200, each being a region adjacent to the trench wall of the annular isolation trench 201. As another example, when two annular isolation trenches 201 are formed, three sub-light-emitting regions are formed on the GaN-based light emitter 200. The three sub-light-emitting regions 202 are the two regions adjacent to the wall of the innermost annular isolation groove 201 and the region adjacent to the wall of the outermost annular isolation groove 201 (the innermost and outermost annular isolation grooves 201 share a common adjacent region, and the common adjacent region of two annular isolation grooves 201 constitutes one sub-light-emitting region 202; therefore, when two annular isolation grooves 201 are provided, three sub-light-emitting regions 202 are formed on the GaN-based light-emitting body 200). The purpose of extending the annular isolation grooves 201 through the upper and lower surfaces of the GaN-based light-emitting body 200 is to allow each sub-light-emitting region 202 to be illuminated independently.
[0050] It should be noted that the wall of the annular isolation groove 201 includes the inner wall of the annular isolation groove 201 and the outer wall of the annular isolation groove 201.
[0051] In this embodiment, at least one annular isolation groove 201 is provided in the GaN-based light emitter 200. The area adjacent to the groove wall of any annular isolation groove 201 is a sub-light-emitting area 202. When each sub-light-emitting area 202 is lit, it emits a beam of light at a certain angle. Therefore, the beam can be changed by lighting different sub-light-emitting areas 202, realizing the beam change through a GaN-based multi-area LED chip. The structure is simple, which reduces the cost of the lighting fixture and makes the size and weight of the lighting fixture smaller.
[0052] Furthermore, the lighting fixture also includes a positive lens, which is mounted on the housing and through which the light emitted from the GaN-based multi-area LED chip is emitted.
[0053] In this embodiment, when one annular isolation groove 201 is formed, the light power density of the sub-light-emitting region 202 adjacent to the inner wall of the annular isolation groove is the highest. When several annular isolation grooves are formed, the light power density of the sub-light-emitting region 202 adjacent to the inner wall of the innermost annular isolation groove is the highest. Among them, the light power density of the sub-light-emitting region 202 with the highest light power density is greater than 6 A / mm. 2 The optical power density can be 6.5 A / mm². 2 7A / mm 2 9A / mm 2 12A / mm 2 When determining the sub-emitting region 202 with the highest optical power density, those skilled in the art can determine it according to the actual situation, and no further restrictions are imposed here.
[0054] Since the sub-emitting region 202 with the highest light power density is located at the innermost side of all sub-emitting regions 202 when one or more annular isolation slots 201 are formed, the emitted beam has the smallest emission angle and the highest brightness when the sub-emitting region 202 with the highest light power density is lit. When using this lighting fixture, when it is necessary to illuminate a distant target with a small field of view, lighting the sub-emitting region 202 with the highest light power density will emit a beam with the highest brightness and the smallest emission angle. This beam is then emitted through a positive lens to form a strong beam that illuminates the distant target with a small field of view. When illuminating some targets that are closer and have a large field of view, different sub-emitting regions 202 can be lit according to the actual situation to meet the illumination requirements. This allows the lighting fixture using the GaN-based multi-area LED chip to illuminate both distant and bright targets, as well as close targets with a wide range, achieving the best lighting effect and realizing beam transformation.
[0055] In some embodiments, such as Figure 2As shown, this utility model also provides a method for fabricating a GaN-based multi-region LED chip as described above, the method comprising:
[0056] S100, Provide a substrate;
[0057] S200, A GaN-based light emitter is generated on the substrate;
[0058] S300. An annular isolation groove is formed on the GaN-based light emitter. The annular isolation groove penetrates the upper and lower surfaces of the GaN-based light emitter. When several annular isolation grooves are formed, the outlines of the orthogonal projections of the multiple annular isolation grooves on the substrate gradually decrease and are formed sequentially from the inside to the outside.
[0059] In this embodiment, the substrate can be a sapphire substrate. The GaN-based light emitter may include a metal electrode and, from bottom to top, an N-shaped gallium nitride layer, a multi-layer quantum well layer, a P-shaped gallium nitride layer, and a transparent conductive layer disposed on the substrate. The N-shaped gallium nitride layer, the multi-layer quantum well layer, the P-shaped gallium nitride layer, and the transparent conductive layer can be sequentially grown on the sapphire substrate using MOCVD technology. When forming an annular isolation trench, the annular isolation trench penetrates the upper surface of the transparent conductive layer and the lower surface of the N-shaped gallium nitride layer. The metal electrode is fabricated by evaporating a metal film.
[0060] When creating the annular isolation trench, a ring-shaped trench penetrating the upper and lower surfaces of the GaN-based light emitter is etched using laser or ion etching methods. This creates an annular isolation trench that penetrates both the upper and lower surfaces of the GaN-based light emitter. The annular isolation trench forms several sub-light-emitting regions within the GaN-based light emitter; the specific number of sub-light-emitting regions is related to the number of annular isolation trenches created.
[0061] In this embodiment, at least one annular isolation groove is provided in the GaN-based light emitter. The area adjacent to the groove wall of any annular isolation groove is a sub-light-emitting area. When each sub-light-emitting area is lit, it emits a beam of light at a certain angle. Therefore, the beam can be changed by lighting different sub-light-emitting areas. This realizes the beam change through a GaN-based multi-area LED chip. The structure is simple, which reduces the cost of the lighting fixture and makes the size and weight of the lighting fixture smaller.
[0062] It should be noted that the descriptions of the above-described embodiments of lighting fixtures and manufacturing methods are similar to those of the above-described embodiments of GaN-based multi-region LED chips, and have similar beneficial effects. For technical details not disclosed in the embodiments of the lighting fixtures and manufacturing methods, please refer to the descriptions of the GaN-based multi-region LED chip embodiments of this utility model for understanding.
[0063] In summary, this utility model provides a GaN-based multi-region LED chip and lighting fixture, which has the following beneficial effects:
[0064] At least one annular isolation groove 201 is provided in the GaN-based light emitter 200. The area adjacent to the groove wall of any annular isolation groove 201 is a sub-light emission area 202. When each sub-light emission area 202 is lit, it emits a beam of light at a certain angle. Therefore, the beam can be changed by lighting different sub-light emission areas 202. The beam can be changed by a GaN-based multi-area LED chip. The structure is simple, which reduces the cost of the lighting fixture and makes the size and weight of the lighting fixture smaller.
[0065] It is understood that the above embodiments only illustrate preferred embodiments of the present utility model, and their descriptions are relatively specific and detailed, but they should not be construed as limiting the scope of the present utility model patent. It should be noted that for those skilled in the art, the above technical features can be freely combined, and several modifications and improvements can be made without departing from the concept of the present utility model, all of which fall within the protection scope of the present utility model. Therefore, all equivalent transformations and modifications made within the scope of the claims of the present utility model should fall within the coverage of the claims of the present utility model.
Claims
1. A GaN-based multi-region LED chip, characterized in that, include: Substrate and GaN-based light emitter disposed on said substrate; At least one annular isolation groove is formed on the GaN-based light emitter. The annular isolation groove penetrates the upper and lower surfaces of the GaN-based light emitter. When a plurality of annular isolation grooves are formed, the outlines of the orthographic projections of the plurality of annular isolation grooves on the substrate gradually decrease and are sequentially nested from the inside to the outside. In this context, the region adjacent to the wall of any annular isolation groove on the GaN-based light emitter is a sub-light-emitting region, and each sub-light-emitting region emits a beam of light at a certain angle when it is lit.
2. The GaN-based multi-region LED chip according to claim 1, characterized in that, The GaN-based light emitter includes: a metal electrode and, from bottom to top, an N-shaped gallium nitride layer, a multilayer quantum well layer, a P-shaped gallium nitride layer, and a transparent conductive layer disposed on the substrate. Wherein, the upper surface of the transparent conductive layer is the upper surface of the GaN-based light emitter, and the lower surface of the N-shaped gallium nitride layer is the lower surface of the GaN-based light emitter; The positive electrode in the metal electrode is connected to the transparent conductive layer, and the negative electrode in the metal electrode is connected to the N-shaped gallium nitride layer.
3. The GaN-based multi-region LED chip according to claim 1, characterized in that, When the annular isolation groove is provided, the light power density of the sub-light-emitting region adjacent to the inner wall of the annular isolation groove is the largest.
4. The GaN-based multi-region LED chip according to claim 1, characterized in that, When several annular isolation grooves are provided, the light power density of the sub-light-emitting region adjacent to the inner wall of the innermost annular isolation groove is the highest.
5. The GaN-based multi-region LED chip according to claim 4, characterized in that, When several annular isolation grooves are provided, the light power density of the sub-light-emitting region gradually decreases from the inside to the outside.
6. The GaN-based multi-region LED chip according to claim 3 or 5, characterized in that, The sub-emitting region with the highest optical power density has an optical power density greater than 6 A / mm². 2 .
7. The GaN-based multi-region LED chip according to claim 1, characterized in that, The annular isolation groove can be a circular annular isolation groove or a polygonal annular isolation groove.
8. A lighting fixture, characterized in that, include: A housing having a cavity and a GaN-based multi-region LED chip as described in any one of claims 1-7.
9. The lighting fixture according to claim 8, characterized in that, The lighting fixture also includes a positive lens, which is disposed on the housing and the light emitted from the GaN-based multi-area LED chip is emitted through the positive lens.