Power amplifier

Abstract

The utility model provides a power amplification device, relates to the technical field of signal modulation, and realizes modulation and emission of high-frequency signals through a full-bridge switch amplifier and a half-bridge switch amplifier which comprise gallium nitride switches. The high-power-density low-power-consumption high-speed switch has the advantages of being high in power density, low in power consumption, high in switching speed, excellent in thermal stability, low in harmonic distortion, good in linearity, good in anti-interference performance, good in lightning protection performance, high in on-load adaptive capacity and the like. Through the first isolation amplifier and the second isolation amplifier, the driving design of the power amplifier is simplified.

Description

Technical Field

[0001] This invention relates to the field of signal modulation technology, and more particularly to a power amplifier device. Background Technology

[0002] Transmitter power amplifiers are indispensable components in radio broadcasting. Their main function is to amplify the weak signals generated by the signal source, process them, and then transmit them to the antenna system, thereby enabling long-distance signal transmission. In actual medium-wave broadcasting, the power amplification of the power amplifier can often reach several kilowatts or even higher.

[0003] Traditional Pulse Density Modulation (PDM) transmitters typically consist of an optical excitation processing unit, a microcontroller unit (MCU) system, a PDM modulation signal driver, and an RF driver. The optical excitation processing module is responsible for communication with the primary and backup exciters, receiving multiple PDM modulation signals with a 120-degree phase difference, receiving exciter control commands, and uploading power amplifier unit operating parameters. The MCU system is responsible for acquiring real-time operating parameters of the power amplifier unit and controlling the carrier excitation. The PDM modulation driver amplifies the PDM modulated square wave signal to coordinate with the RF modulation. The RF modulation consists of multiple high-power field-effect transistors (FETs). The carrier excitation signal and the PDM modulation driver signal are modulated using these FETs to achieve medium-wave RF signal modulation. Multiple modulation power amplifiers combine the required RF power using power combining technology.

[0004] PDM transmitters have poor anti-interference and lightning protection capabilities, meaning they are more susceptible to interference or damage in harsh electromagnetic environments or during thunderstorms. Secondly, they have poor load adaptability, meaning their performance and stability may be affected under varying workload conditions. These shortcomings collectively contribute to a particularly high failure rate of the modulation power amplifier.

[0005] In summary, the power amplifier devices of existing PDM transmitters are prone to failure. Summary of the Invention

[0006] This invention provides a power amplifier device to address the shortcomings of existing power amplifier devices that are prone to failure, thereby improving the stability of the power amplifier device.

[0007] This application provides a power amplification device, including: a power modulation module, a signal modulation module, a first low-pass filter, and a second low-pass filter. The power modulation module includes a first isolation amplifier and a half-bridge switching amplifier. The first isolation amplifier is connected to the half-bridge switching amplifier, and the half-bridge switching amplifier is connected to the power module. The signal modulation module includes a second isolation amplifier and a full-bridge switching amplifier. The second isolation amplifier is connected to the full-bridge switching amplifier. The half-bridge switching amplifier is connected to the full-bridge switching amplifier through the first low-pass filter. The signal output terminal of the full-bridge switching amplifier is connected to the second low-pass filter. The full-bridge switching amplifier and the half-bridge switching amplifier include at least one gallium nitride switch.

[0008] According to the power amplification device provided in this application, the first isolation amplifier includes a first driving unit and a second driving unit, the power supply module includes a first power supply unit and a second power supply unit, the half-bridge switching amplifier includes a first gallium nitride switch and a second gallium nitride switch, the first driving unit is connected to the first power supply unit and the first gallium nitride switch, and the second driving unit is connected to the second power supply unit and the second gallium nitride switch.

[0009] According to the power amplifier device provided in this application, the second isolation amplifier includes a third driving unit, a fourth driving unit, a fifth driving unit, and a sixth driving unit. The full-bridge switching amplifier includes a third gallium nitride switch, a fourth gallium nitride switch, a fifth gallium nitride switch, and a sixth gallium nitride switch. The third driving unit is connected to the third gallium nitride switch, the fourth driving unit is connected to the fourth gallium nitride switch, the fifth driving unit is connected to the fifth gallium nitride switch, and the sixth driving unit is connected to the sixth gallium nitride switch.

[0010] According to the power amplifier device provided in this application, the first power supply unit further includes a first Zener diode, and the second power supply unit further includes a second Zener diode.

[0011] According to the power amplifier device provided in this application, the first driving unit has a first output negative voltage port and a first ground port, the first output negative voltage port is connected to the gate of the first gallium nitride switch, and the first ground port is connected to the drain of the first gallium nitride switch; the second driving unit has a second output negative voltage port and a second ground port, the second output negative voltage port is connected to the gate of the second gallium nitride switch, and the second ground port is connected to the drain of the second gallium nitride switch.

[0012] According to the power amplifier device provided in this application, the third driving unit is provided with a third output negative voltage port, which is connected to the gate of the third gallium nitride switch; the fourth driving unit is provided with a fourth output negative voltage port, which is connected to the gate of the fourth gallium nitride switch; and the fifth driving unit is provided with a fifth output negative voltage port, which is connected to the gate of the fifth gallium nitride switch.

[0013] According to the power amplification device provided in this application, the second isolation amplifier is provided with a signal collision detection unit.

[0014] The power amplification device provided in this application further includes a first photoelectric signal conversion unit and a second photoelectric signal conversion unit, wherein the first photoelectric signal conversion unit is connected to the input terminal of the first isolation amplifier, and the second photoelectric signal conversion unit is connected to the input terminal of the second isolation amplifier.

[0015] According to the power amplifier device provided in this application, the first driving unit further includes a port for outputting a first positive voltage, the port for outputting the first positive voltage being connected to the gate of the first gallium nitride switch; the second driving unit further includes a port for outputting a second positive voltage, the port for outputting the second positive voltage being connected to the gate of the second gallium nitride switch.

[0016] According to the power amplifier device provided in this application, the gate of the gallium nitride switch is provided with an electrostatic discharge protection circuit.

[0017] The power amplifier device provided in this application achieves high-frequency signal modulation and transmission through a full-bridge switching amplifier and a half-bridge switching amplifier containing gallium nitride switches. It features high power density, low power consumption, fast switching speed, excellent thermal stability, low harmonic distortion, good linearity, good anti-interference performance, good lightning protection, and strong load adaptability. The use of a first isolation amplifier and a second isolation amplifier simplifies the power amplifier's drive design. Attached Figure Description

[0018] To more clearly illustrate the technical solutions in this invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are some embodiments of this invention. For those skilled in the art, other drawings can be obtained from these drawings without creative effort.

[0019] Figure 1 This is a schematic diagram of the power amplifier device provided by the present invention.

[0020] Figure 2This is a schematic diagram of the power modulation module provided by the present invention.

[0021] Figure 3 This is a schematic diagram of voltage flow when the first gallium nitride switch is turned off and on, provided by the present invention.

[0022] Figure label:

[0023] 101: First isolation amplifier; 102: First gallium nitride switch; 103: Second gallium nitride switch; 104: First low-pass filter; 105: Second isolation amplifier; 106: Third gallium nitride switch; 107: Fourth gallium nitride switch; 108: Fifth gallium nitride switch; 109: Sixth gallium nitride switch; 110: Second low-pass filter; 111: First photoelectric signal conversion unit; 112: Second photoelectric signal conversion unit; 113: First isolator; 114: First output positive voltage port; 115: First output negative voltage port; 116: First connector 117: Second output positive voltage port; 118: Second output negative voltage port; 119: Second ground port; 120: First Zener diode; 121: Second Zener diode; 122: Inductor; 123: Capacitor; 124: First power input terminal; 125: First power output terminal; 126: First power output midpoint reference level terminal; 127: Second power input terminal; 128: Second power output midpoint reference level terminal; 129: Second power output terminal; 130: First drive unit; 131: Second drive unit; 132: Resistor. Detailed Implementation

[0024] To make the objectives, technical solutions, and advantages of this invention clearer, the technical solutions of this invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of this invention. All other embodiments obtained by those skilled in the art based on the embodiments of this invention without creative effort are within the scope of protection of this invention.

[0025] Figure 1 This is a schematic diagram of the power amplifier device provided by the present invention, as shown below. Figure 1As shown, a power amplifier device includes: a power modulation module, a signal modulation module, a first low-pass filter 104, and a second low-pass filter 110. The power modulation module includes a first isolation amplifier 101 and a half-bridge switching amplifier. The first isolation amplifier 101 is connected to the half-bridge switching amplifier, and the half-bridge switching amplifier is connected to the power module. The signal modulation module includes a second isolation amplifier 105 and a full-bridge switching amplifier. The second isolation amplifier 105 is connected to the full-bridge switching amplifier. The half-bridge switching amplifier is connected to the full-bridge switching amplifier through the first low-pass filter 104. The signal output terminal of the full-bridge switching amplifier is connected to the second low-pass filter 110. The full-bridge switching amplifier and the half-bridge switching amplifier include at least one gallium nitride switch.

[0026] In one embodiment, the system further includes a first photoelectric signal conversion unit 111 and a second photoelectric signal conversion unit 112. The first photoelectric signal conversion unit 111 is connected to the input terminal of the first isolation amplifier 101, and the second photoelectric signal conversion unit 112 is connected to the input terminal of the second isolation amplifier 105.

[0027] The transmitter power amplifier in this application uses a bridge switching power amplifier, which amplifies high-power modulated radio frequency signals of varying power through a pulsed mixed modulation excitation source and a variable bridge voltage. Multiple full-bridge outputs are then power-combined and filtered to obtain the final radio frequency output signal that meets the requirements.

[0028] A full-bridge switching amplifier is a full-bridge switching amplifier circuit with high-voltage, high-power gallium nitride (GaN) switches as its core. Full-bridge switching amplifier circuits have the advantages of small size, high power, and high efficiency. By combining them with new GaN technology switches, high-power switching amplifiers for medium and short waves can achieve significant performance improvements compared to traditional silicon-based metal-oxide-semiconductor field-effect transistor (MOSFET) amplifiers. Figure 1 As shown, the full-bridge switching amplifier includes four gallium nitride switches.

[0029] The GaN switch in the full-bridge switching amplifier is model GS-065-030, with a maximum voltage of 700V and a maximum current of 40A. The heat dissipation of a single GaN switch transistor is 250W at room temperature and still exceeds 100W at an ambient temperature of 100℃, with a thermal resistance of only 0.46℃ / W. From the "dissipation-temperature curve" of the switching transistor, it can be calculated that even under extreme conditions of an ambient temperature of 55℃ and a 40-degree heatsink temperature difference, with a full-bridge efficiency at the lower limit of 85%, the four-transistor full-bridge amplifier can still guarantee an RF power output capability of over 1500W.

[0030] The first photoelectric signal conversion unit 111 is connected to the input terminal of the first isolation amplifier 101. The output terminal of the first isolation amplifier 101 is connected to a half-bridge switching amplifier, which is also connected to a power supply module. This module modulates the data signal from the first photoelectric signal conversion unit 111 into the power supply signal to obtain a first modulated signal. The first low-pass filter 104 is used to filter the first modulated signal to improve its quality.

[0031] The second photoelectric signal conversion unit 112 is connected to the input terminal of the second isolation amplifier 105, and the output terminal of the second isolation amplifier 105 is connected to the full-bridge switching amplifier. The half-bridge switching amplifier is connected to the full-bridge switching amplifier via the first low-pass filter 104. The full-bridge switching amplifier re-modulates the data signal and the first modulation signal from the second photoelectric signal conversion unit 112 to obtain a radio frequency (RF) signal. The RF signal is then filtered by the second low-pass filter 110 before being emitted. The data signal and the first modulation signal are control signals that are 180 degrees out of phase.

[0032] The power amplifier device provided in this application embodiment achieves high-frequency signal modulation and transmission through a full-bridge switching amplifier and a half-bridge switching amplifier containing gallium nitride switches. It features high power density, low power consumption, fast switching speed, excellent thermal stability, low harmonic distortion, good linearity, good anti-interference performance, good lightning protection performance, and strong load adaptability. The first isolation amplifier 101 and the second isolation amplifier 105 simplify the power amplifier's drive design.

[0033] In one embodiment, the first isolation amplifier 101 includes a first driving unit 130 and a second driving unit 131, the power module includes a first power supply unit and a second power supply unit, and the half-bridge switching amplifier includes a first gallium nitride switch 102 and a second gallium nitride switch 103. The first driving unit 130 is connected to the first power supply unit and the first gallium nitride switch 102, and the second driving unit 131 is connected to the second power supply unit and the second gallium nitride switch 103.

[0034] In one embodiment, the first driving unit has a first output negative voltage port 115 and a first ground port 116. The first output negative voltage port 115 is connected to the gate of the first gallium nitride switch 102, and the first ground port 116 is connected to the drain of the first gallium nitride switch 102. The second driving unit has a second output negative voltage port 118 and a second ground port 119. The second output negative voltage port 118 is connected to the gate of the second gallium nitride switch 103, and the second ground port 119 is connected to the drain of the second gallium nitride switch 103.

[0035] In one embodiment, the first driving unit further includes a port 114 for outputting a first positive voltage, which is connected to the gate of the first gallium nitride switch 102; the second driving unit further includes a port 117 for outputting a second positive voltage, which is connected to the gate of the second gallium nitride switch 103.

[0036] In one embodiment, the gate of the gallium nitride switch is provided with an electrostatic discharge protection circuit.

[0037] The half-bridge switching amplifier consists of a first gallium nitride switch 102 and a second gallium nitride switch 103. The first isolation amplifier 101 includes a first isolator 113, a first driving unit, and a second driving unit. Both the first driving unit and the second driving unit are connected to the first isolator 113.

[0038] The first driving unit is connected to the first power supply unit and the first gallium nitride switch 102, and is used to drive the first gallium nitride switch 102 independently. The second driving unit is connected to the second power supply unit and the second gallium nitride switch 103, and is used to drive the second gallium nitride switch 103 independently.

[0039] Gallium nitride (GaN) switches have very high transconductance and very low threshold voltage (Vth). The higher the drive voltage, the stronger the current carrying capacity of the device. GaN achieves reverse conduction through self-commutation. Unlike MOSFETs, it does not have a body diode. The absence of a body diode means the absence of diode reverse recovery and reverse recovery charge (Qrr).

[0040] High-voltage GaN integrates electrostatic discharge (ESD) protection circuitry on the gate, improving gate reliability. Most existing GaN gates have a continuous voltage range of -1.4V to +7V. To meet the high negative voltage turn-off requirements of high-power power supply applications, some GaN gates have improved their negative voltage withstand capability to -6V. The transient gate withstand voltage range is -20V to +10V.

[0041] For high-voltage innovative gallium nitride (InnoGaN), the higher the drive voltage, the stronger the current-carrying capacity and the lower the on-resistance (Rdson). For compatible devices, a drive voltage of 6V~6.5V is recommended for application. The recommended drive voltage for high-voltage gallium nitride (HVGaN) is 6V, which is lower than the 8~12V drive voltage of silicon-based (Si) MOSFETs. To achieve compatibility with Si MOSFET control ICs, the drive voltage of the control IC needs to be stepped down or an additional driver chip needs to be added to meet the high-voltage InnoGaN drive voltage requirements.

[0042] To avoid the risk of the half-bridge drive being turned on by mistake, a negative voltage circuit for the half-bridge isolated drive circuit needs to be designed.

[0043] like Figure 3 As shown in (b), the first drive unit 130 has a port 115 for outputting a first negative voltage and a first ground port 116, which are used to form a circuit when the first gallium nitride switch 102 is open, and output a negative voltage to the first gallium nitride switch 102 to protect the first gallium nitride switch 102. Figure 3 As shown in (a), the port 114 of the first output positive voltage of the first driving unit 130 is connected to the gate of the first gallium nitride switch 102, and is used to output a positive voltage to the first gallium nitride switch 102 when the first gallium nitride switch 102 is turned on, so as to drive the first gallium nitride switch 102.

[0044] The second driving unit 131 has a second negative output voltage port 118 and a second ground port 119, which are used to form a circuit when the second gallium nitride switch 103 is open, and output a negative voltage to the second gallium nitride switch 103 to protect the second gallium nitride switch 103. The second positive output voltage port 117 of the second driving unit 131 is connected to the gate of the second gallium nitride switch 103, and is used to output a positive voltage to the second gallium nitride switch 103 when the second gallium nitride switch 103 is turned on, so as to drive the second gallium nitride switch 103.

[0045] Furthermore, the port 115 for the first negative output voltage is connected to the gate of the first gallium nitride switch 102 via an inductor 122. The port 114 for the first positive output voltage is connected to the gate of the first gallium nitride switch 102 via an inductor. The first ground port 116 is connected to the drain of the first gallium nitride switch 102 via a capacitor and a resistor. The first ground port 116 is grounded.

[0046] Furthermore, the second output negative voltage port 118 is connected to the gate of the second gallium nitride switch 103 via an inductor. The second output positive voltage port 117 is connected to the gate of the second gallium nitride switch 103 via an inductor. The second ground port 119 is connected to the drain of the second gallium nitride switch 103 via a capacitor and a resistor. The second ground port 119 is grounded.

[0047] Furthermore, in a half-bridge switching amplifier, reducing the overlap area between the midpoint of the bridge arm and the bus (e.g., 400V) can reduce PCB parasitic capacitance, effectively reducing the output capacitor discharge loss (Eoss) and equivalent output capacitor discharge loss (Eqoss) of the GaN switch, thereby improving system efficiency.

[0048] This application implements independent driving of the first gallium nitride switch 102 through a first driving unit and a first power supply unit, and implements independent driving of the second gallium nitride switch 103 through a second driving unit and a second power supply unit. Protection of the first gallium nitride switch 102 in the off state is achieved through the first output negative voltage port 115 and the first ground port 116. Protection of the second gallium nitride switch 103 in the off state is achieved through the second output negative voltage port 118 and the second ground port 119. Power is supplied to the first gallium nitride switch 102 through the first output positive voltage port 114. Power is supplied to the second gallium nitride switch 103 through the second output positive voltage port 117.

[0049] In one embodiment, the second isolation amplifier 105 includes a third driving unit, a fourth driving unit, a fifth driving unit, and a sixth driving unit, and the full-bridge switching amplifier includes a third gallium nitride switch 106, a fourth gallium nitride switch 107, a fifth gallium nitride switch 108, and a sixth gallium nitride switch 109. The third driving unit is connected to the third gallium nitride switch 106, the fourth driving unit is connected to the fourth gallium nitride switch 107, the fifth driving unit is connected to the fifth gallium nitride switch 108, and the sixth driving unit is connected to the sixth gallium nitride switch 109.

[0050] In one embodiment, the third driving unit has a port for outputting a third negative voltage, which is connected to the gate of the third gallium nitride switch 106; the fourth driving unit has a port for outputting a fourth negative voltage, which is connected to the gate of the fourth gallium nitride switch 107; and the fifth driving unit has a port for outputting a fifth negative voltage, which is connected to the gate of the fifth gallium nitride switch 108.

[0051] The full-bridge switching amplifier consists of a third gallium nitride switch 106, a fourth gallium nitride switch 107, a fifth gallium nitride switch 108, and a sixth gallium nitride switch 109. The second isolation amplifier 105 includes a second isolator, a third driver unit, a fourth driver unit, a fifth driver unit, and a sixth driver unit. The third, fourth, fifth, and sixth driver units are all connected to the second isolator.

[0052] like Figure 1As shown, the third gallium nitride switch 106 (S3) and the fourth gallium nitride switch 107 (S4) form one half-bridge, and the fifth gallium nitride switch 108 (S5) and the sixth gallium nitride switch 109 (S6) form another half-bridge. These two half-bridges together form an "H-type" full-bridge. Two control signals, 180 degrees out of phase, drive the diagonal arms S3-S5 and S4-S6 of the full-bridge, respectively, generating two opposite currents on the intermediate transformer. After being filtered by the transformer, these currents are converted into sinusoidal RF outputs. By modulating the effective pulse times of the two input signals, the output amplitude of the full-bridge amplifier after filtering can be controlled, thus achieving the effect of combining different waveforms for output.

[0053] The third driving unit has a port for outputting a third negative voltage and a third ground port, which are used to form a circuit when the third gallium nitride switch 106 is closed, and output a negative voltage to the third gallium nitride switch 106 to protect the third gallium nitride switch 106. The third driving unit also has a port for outputting a third positive voltage connected to the gate of the third gallium nitride switch 106, which is used to output a positive voltage to the third gallium nitride switch 106 when the third gallium nitride switch 106 is open, so as to drive the third gallium nitride switch 106.

[0054] The fourth driving unit has a fourth negative output voltage port and a fourth ground port, which are used to form a circuit when the fourth gallium nitride switch 107 is closed, and output a negative voltage to the fourth gallium nitride switch 107 to protect the fourth gallium nitride switch 107. The fourth driving unit also has a fourth positive output voltage port connected to the gate of the fourth gallium nitride switch 107, which is used to output a positive voltage to the fourth gallium nitride switch 107 when the fourth gallium nitride switch 107 is open, so as to drive the fourth gallium nitride switch 107.

[0055] The fifth drive unit has a fifth negative output voltage port and a fifth ground port, which are used to form a circuit when the fifth gallium nitride switch 108 is closed, and output a negative voltage to the fifth gallium nitride switch 108 to protect the fifth gallium nitride switch 108. The fifth drive unit also has a fifth positive output voltage port connected to the gate of the fifth gallium nitride switch 108, which is used to output a positive voltage to the fifth gallium nitride switch 108 when the fifth gallium nitride switch 108 is open, so as to drive the fifth gallium nitride switch 108.

[0056] The sixth driving unit has a sixth negative output voltage port and a sixth ground port, which are used to form a circuit when the sixth gallium nitride switch 109 is closed, and output a negative voltage to the sixth gallium nitride switch 109 to protect the sixth gallium nitride switch 109. The sixth driving unit also has a sixth positive output voltage port connected to the gate of the sixth gallium nitride switch 109, which is used to output a positive voltage to the sixth gallium nitride switch 109 when the sixth gallium nitride switch 109 is open, so as to drive the sixth gallium nitride switch 109.

[0057] This application implements individual driving of the gallium nitride (GaN) switch in a full-bridge switching amplifier. Protection of the GaN switch in the full-bridge switching amplifier when it is in the off state is achieved through a port outputting a negative voltage and a ground port. Power supply to the GaN switch in the full-bridge switching amplifier is achieved through a port outputting a positive voltage.

[0058] In one embodiment, the second isolation amplifier 105 is provided with a signal collision detection unit.

[0059] Furthermore, a signal conflict detection unit is also provided in the first isolation amplifier 101.

[0060] The signal collision detection unit is used to detect collisions between the data signal and the first modulation signal. When one of the two signals is in a state that causes the half-bridge to turn on abnormally, a prohibition signal is sent to the gate isolation drive of the gallium nitride switch in the full-bridge switching amplifier to forcibly turn off the GaN full bridge and lock it until the enable signal is emitted to deactivate it.

[0061] This application avoids abnormal half-bridge startup through a signal conflict detection unit, thereby improving the protection of gallium nitride switches in both the full-bridge switching amplifier and the half-bridge switching amplifier.

[0062] In one embodiment, the first power supply unit further includes a first Zener diode 120, and the second power supply unit further includes a second Zener diode 121.

[0063] The conduction voltage of the first gallium nitride switch 102 is determined by the first Zener diode 120, and the conduction voltage of the second gallium nitride switch 103 is determined by the second Zener diode 121. The first Zener diode 120 is used to control the output voltage of the first power supply to a stable value. The second Zener diode 121 is used to control the output voltage of the second power supply to a stable value.

[0064] like Figure 2 As shown, the first power supply unit also includes a resistor, a capacitor, a first power supply output terminal 125, a first power supply output midpoint reference level terminal 126, and a first power supply input terminal 124.

[0065] The second power supply unit also includes a resistor 132, a capacitor, a second power supply output terminal 129, a second power supply output midpoint reference level terminal 128, and a second power supply input terminal 127.

[0066] This application achieves a stable voltage output for the first power supply unit through a first Zener diode 120, and a stable voltage output for the second power supply unit through a second Zener diode 121.

[0067] The device embodiments described above are merely illustrative. The units described as separate components may or may not be physically separate. The components shown as units may or may not be physical units; that is, they may be located in one place or distributed across multiple network units. Some or all of the modules can be selected to achieve the purpose of this embodiment according to actual needs. Those skilled in the art can understand and implement this without any creative effort.

[0068] Through the above description of the embodiments, those skilled in the art can clearly understand that each embodiment can be implemented by means of software plus necessary general-purpose hardware platforms, and of course, it can also be implemented by hardware. Based on this understanding, the above technical solutions, in essence or the part that contributes to the prior art, can be embodied in the form of a software product. This computer software product can be stored in a computer-readable storage medium, such as ROM / RAM, magnetic disk, optical disk, etc., and includes several instructions to cause a computer device (which may be a personal computer, server, or network device, etc.) to execute the methods described in the various embodiments or some parts of the embodiments.

[0069] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, and not to limit them; although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art should understand that modifications can still be made to the technical solutions described in the foregoing embodiments, or equivalent substitutions can be made to some of the technical features; and these modifications or substitutions do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A power amplifier device, characterized in that, include: The system includes a power modulation module, a signal modulation module, a first low-pass filter, and a second low-pass filter. The power modulation module comprises a first isolation amplifier and a half-bridge switching amplifier. The first isolation amplifier is connected to the half-bridge switching amplifier, and the half-bridge switching amplifier is connected to the power module. The signal modulation module comprises a second isolation amplifier and a full-bridge switching amplifier. The second isolation amplifier is connected to the full-bridge switching amplifier. The half-bridge switching amplifier is connected to the full-bridge switching amplifier through the first low-pass filter. The signal output terminal of the full-bridge switching amplifier is connected to the second low-pass filter. Both the full-bridge switching amplifier and the half-bridge switching amplifier include at least one gallium nitride switch.

2. The power amplifier device according to claim 1, characterized in that, The first isolation amplifier includes a first driving unit and a second driving unit, the power module includes a first power supply unit and a second power supply unit, and the half-bridge switching amplifier includes a first gallium nitride switch and a second gallium nitride switch. The first driving unit is connected to the first power supply unit and the first gallium nitride switch, and the second driving unit is connected to the second power supply unit and the second gallium nitride switch.

3. The power amplifier device according to claim 1, characterized in that, The second isolation amplifier includes a third driving unit, a fourth driving unit, a fifth driving unit, and a sixth driving unit. The full-bridge switching amplifier includes a third gallium nitride switch, a fourth gallium nitride switch, a fifth gallium nitride switch, and a sixth gallium nitride switch. The third driving unit is connected to the third gallium nitride switch, the fourth driving unit is connected to the fourth gallium nitride switch, the fifth driving unit is connected to the fifth gallium nitride switch, and the sixth driving unit is connected to the sixth gallium nitride switch.

4. The power amplifier device according to claim 2, characterized in that, The first power supply unit further includes a first Zener diode, and the second power supply unit further includes a second Zener diode.

5. The power amplifier device according to claim 2, characterized in that, The first driving unit has a port for a first output negative voltage and a first ground port. The port for the first output negative voltage is connected to the gate of the first gallium nitride switch, and the first ground port is connected to the drain of the first gallium nitride switch. The second driving unit has a second output negative voltage port and a second ground port. The second output negative voltage port is connected to the gate of the second gallium nitride switch, and the second ground port is connected to the drain of the second gallium nitride switch.

6. The power amplifier device according to claim 3, characterized in that, The third driving unit is provided with a third negative output voltage port, which is connected to the gate of the third gallium nitride switch. The fourth driving unit is provided with a fourth negative output voltage port, which is connected to the gate of the fourth gallium nitride switch. The fifth driving unit is provided with a fifth negative output voltage port, which is connected to the gate of the fifth gallium nitride switch.

7. The power amplifier device according to claim 1, characterized in that, The second isolation amplifier is equipped with a signal collision detection unit.

8. The power amplifier device according to claim 1, characterized in that, It also includes a first photoelectric signal conversion unit and a second photoelectric signal conversion unit, wherein the first photoelectric signal conversion unit is connected to the input terminal of the first isolation amplifier, and the second photoelectric signal conversion unit is connected to the input terminal of the second isolation amplifier.

9. The power amplifier device according to claim 5, characterized in that, The first driving unit further includes a port for outputting a first positive voltage, which is connected to the gate of the first gallium nitride switch; the second driving unit further includes a port for outputting a second positive voltage, which is connected to the gate of the second gallium nitride switch.

10. The power amplifier device according to claim 1, characterized in that, The gate of the gallium nitride switch is equipped with an electrostatic discharge protection circuit.

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