Passivation contact solar cell

By stacking a diffusion control layer and an external doping layer in a passivated contact solar cell and independently controlling the concentration of the external doping layer, the contradiction between passivation effect and contact performance in passivated contact solar cells is resolved, achieving high yield and excellent cell performance.

CN223553692UActive Publication Date: 2025-11-14JA SOLAR TECH YANGZHOU
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Patent Information

Application Number
CN202422359810.8
Authority / Receiving Office
CN · China
Patent Type
Utility models(China)
Current Assignee / Owner
Filing Date
2024-09-26
Publication Date
2025-11-14
Estimated Expiration
2034-09-26

AI Technical Summary

Technical Problem

There is a contradiction between improving the passivation effect and contact performance of existing passivated contact solar cells. High doping concentration increases the risk of tunnel oxide layer being broken, resulting in low yield.

Method used

A diffusion control layer and an external doped layer are stacked on the passivation contact structure. The diffusion control layer blocks the diffusion of dopants, and the concentration of the external doped layer is independently controlled to make it higher than the doping concentration of the passivation contact structure, thus forming a doped layer structure with a high concentration difference.

Benefits of technology

It effectively ensures the excellent passivation effect and high yield of passivated contact solar cells, significantly improves the contact performance of the cells, avoids the risk of damage to the passivation contact structure, and enhances the current collection capability.

✦ Generated by Eureka AI based on patent content.

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Abstract

The utility model discloses a passivation contact solar cell. The passivated contact solar cell may include: a silicon substrate; the passivation contact structure is arranged on the first main surface of the silicon substrate; the diffusion regulation and control layer is laminated on one side, deviating from the silicon substrate, of the passivation contact structure; the outer doping layer is laminated on one side, deviating from the silicon substrate, of the diffusion regulation and control layer; the type of a doping element contained in the outer doping layer is consistent with that of a doping element contained in the passivation contact structure; the doping concentration of the outer doping layer is higher than the doping concentration of the passivation contact structure. According to the passivation contact solar cell, the excellent passivation effect and high yield of the passivation contact solar cell can be ensured, and the contact performance of the cell is greatly improved.
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