Edge cleaning structure of thin-film solar cell
By designing a combined structure of buffer zone and busbar in the perovskite solar cell, the burr problem caused by laser etching is solved, internal short circuits are prevented, and the stability and photoelectric conversion efficiency of the cell are improved.
Patent Information
- Application Number
- CN202422737396.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-09
- Publication Date
- 2025-11-14
- Estimated Expiration
- 2034-11-09
AI Technical Summary
During the etching process of perovskite solar cells, uneven laser energy can cause burrs to appear in the edge cleaning section. During encapsulation, these burr fragments fall into the busbar area, creating an internal short circuit and causing the cell to fail.
Design an edge-clearing structure for a thin-film solar cell, including a substrate layer divided into a thin-film solar cell structure, a buffer zone, and a current-collecting zone. The buffer zone is set to prevent excessive laser energy from breaking down the conductive thin film layer and to prevent burr fragments from falling off. A combination structure of conductive thin film layer, barrier layer, transport layer, passivation layer, and light-absorbing layer is adopted.
It effectively prevents open circuits and burr fragments from falling off due to laser etching, improving the stability and commercial value of the battery and enhancing photoelectric conversion efficiency.
Smart Images
Figure CN223553701U_ABST
Abstract
Description
Technical Field
[0001] This application relates to the field of thin-film solar cell technology, and more particularly to a clearing structure for a thin-film solar cell. Background Technology
[0002] With the challenge of global warming, it is crucial to reduce carbon emissions while continuously developing renewable energy sources such as photovoltaics, wind power, and hydropower. Perovskite solar cells, as a representative of emerging solar photovoltaic cells, possess advantages such as high efficiency, low cost, lightweight and transparent design, and ease of fabrication. In the fabrication of large-area perovskite solar modules, laser etching is used to divide a single cell area into several series-connected cells, effectively preventing lateral recombination. However, during the actual etching process, uneven laser energy often results in burrs on the edges of the etched cells. During encapsulation, the high pressure causes these burrs to fall into the current-carrying area, leading to internal short circuits and cell failure. Therefore, ensuring the cleanliness and stability of the edge cleaning process is one of the critical technical bottlenecks that urgently needs to be addressed for the commercialization of perovskite photovoltaic cells.
[0003] Therefore, this application provides an edge-cleaning structure for thin-film solar cells to solve the above-mentioned problems. Utility Model Content
[0004] This application provides an edge-cleaning structure for thin-film solar cells, which solves the problem that during the etching process of perovskite solar cells, uneven laser energy always causes burrs to appear on the edges of the etched part of the cell. During encapsulation, the strong pressure causes residual burr fragments to fall into the busbar area, resulting in internal short circuits and cell failure.
[0005] To solve the above-mentioned technical problems, this application provides a thin-film solar cell edge clearing structure, including a substrate layer 101, wherein the substrate layer 101 is sequentially divided into a thin-film solar cell structure 1011, a buffer zone 1012 and a current collection region 1013;
[0006] The thin-film solar cell structure includes, from bottom to top, a conductive thin film layer 102, a first barrier layer 103, a first transmission layer 104, a first passivation layer 105, a light-absorbing layer 106, a second passivation layer 107, a second transmission layer 108, a second barrier layer 109, and a back electrode 1010.
[0007] The buffer zone 1012 is provided with the conductive thin film layer 102, the first barrier layer 103, the first transmission layer 104, the first passivation layer 105, the light-absorbing layer 106, the second passivation layer 107, the second transmission layer 108, and the second barrier layer 109 in sequence from bottom to top.
[0008] A first conductive thin film layer 1021 is provided on the current collection area 1013;
[0009] The current collection area 1013 is arranged adjacent to the buffer zone 1012, and the buffer zone 1012 is arranged adjacent to the thin-film solar cell structure 1011.
[0010] As a further embodiment, the residual shapes of the first blocking layer 103, the first transmission layer 104, the first passivation layer 105, the light-absorbing layer 106, the second passivation layer 107, the second transmission layer 108, and the second blocking layer 109 may include cubes, cuboids, cylinders, cones, and spheres.
[0011] As a further embodiment, the width of the buffer 1012 is 1μm to 2000μm.
[0012] As a further embodiment, the width of the busbar region 1013 is 1μm to 1000mm.
[0013] As a further embodiment, the thickness of the conductive thin film layer 102 is 0~100μm.
[0014] As a further embodiment, the thickness of the first barrier layer 103 and the second barrier layer 109 is 0~500nm.
[0015] As a further embodiment, the thickness of the first transmission layer 104 and the second transmission layer 108 is 0~500nm.
[0016] As a further embodiment, the thickness of the light-absorbing layer 106 is 0~3000nm.
[0017] Compared to existing technologies, the edge-clearing structure of the thin-film solar cell provided in this application includes a substrate layer 101, which is sequentially divided into a thin-film solar cell structure 1011, a buffer zone 1012, and a current-collecting region 1013. The thin-film solar cell structure includes, from bottom to top, a conductive thin film layer 102, a first barrier layer 103, a first transport layer 104, a first passivation layer 105, a light-absorbing layer 106, a second passivation layer 107, a second transport layer 108, and a second barrier layer 109. The back electrode 1010; the buffer zone 1012 is provided with a conductive thin film layer 102, a first barrier layer 103, a first transport layer 104, a first passivation layer 105, a light-absorbing layer 106, a second passivation layer 107, a second transport layer 108, and a second barrier layer 109 from bottom to top; the current-collecting region 1013 is provided with a first conductive thin film layer 1021; wherein, the current-collecting region 1013 is arranged adjacent to the buffer zone 1012 and the buffer zone 1012 is arranged adjacent to the thin film solar cell structure 1011.
[0018] This edge-clearing structure uses a buffer zone to separate the solar cell structure from the busbar area. On the one hand, it prevents the bottom conductive film layer from being punctured due to the high energy of the first laser etching, which would cause an open circuit and lead to cell failure. On the other hand, it also prevents the burrs on the top back electrode layer from falling into the busbar area due to the energy emitted by the laser in an unstable state, which would cause an internal short circuit and also lead to cell failure. It has extremely high commercial and technological value. Attached Figure Description
[0019] To more clearly illustrate the technical solution of this application, the drawings used in the embodiments will be briefly introduced below. Obviously, for those skilled in the art, other drawings can be obtained based on these drawings without any creative effort.
[0020] Figure 1 This is a schematic diagram of the edge-clearing structure of a thin-film solar cell provided in an embodiment of the present invention.
[0021] In the figure: 101 Substrate layer; 1013 Current collection area; 102 Conductive thin film layer; 103 First barrier layer; 104 First transport layer; 105 First passivation layer; 106 Light absorption layer; 107 Second passivation layer; 108 Second transport layer; 109 Second barrier layer; 1010 Back electrode; 1010 First conductive thin film layer. Detailed Implementation
[0022] To enable those skilled in the art to better understand the technical solutions in this application, the technical solutions in the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this utility model, and not all embodiments.
[0023] The core of this application is to provide an edge-cleaning structure for thin-film solar cells, solving the problem that during the etching process of perovskite solar cells, uneven laser energy always leads to burrs on the edges of the etched cell portion. During encapsulation, the high pressure causes residual burr fragments to fall into the current-collecting area, resulting in internal short circuits and cell failure. This addresses the issue of ensuring the cleanliness and stability of the edge cleaning process.
[0024] Figure 1 This is a schematic diagram of the edge-clearing structure of a thin-film solar cell provided in an embodiment of the present invention.
[0025] like Figure 1As shown, a thin-film solar cell edge clearing structure includes a substrate layer 101, which is sequentially divided into a thin-film solar cell structure 1011, a buffer zone 1012, and a current-collecting region 1013. The thin-film solar cell structure includes, from bottom to top, a conductive thin film layer 102, a first barrier layer 103, a first transport layer 104, a first passivation layer 105, a light-absorbing layer 106, a second passivation layer 107, a second transport layer 108, a second barrier layer 109, and a back electrode 1010. The conductive thin film layer 102 uses materials including one or more of the following semiconductor materials: AZO, ITO, FTO, IZO, Cu2O, ZnO, SnO2, Fe2O3, TiO2, ZrO2, CoO, WO3, In2O3, Al2O3, Fe3O4, and Cr2O. The materials used in the first barrier layer 103 and the second barrier layer 109 include one or more of the following materials: TiO2, BCP, Al2O3, CVD-parylene polymer, etc. The materials used in the first transport layer 104 and the second transport layer 108 include SnO2, TiO2, PCBM, C... 60 Fused-ring electron acceptor IDIC molecule, Spiro-OMeTAD, PTAA, PEDOT:PSS, NiO x The materials used in the first passivation layer 105 and the second passivation layer 107 include one or more of the following materials: PEAl, TiO2, ammonium ligand salts with alkylammonium chains, cyclic or aromatic ammonium cations, and typical halide anions. + MA + Cl - I - ,Br - Cs + Pb 2+ Sn 2+ Zn 2+ The back electrode 1010 uses one or more of the following elements: Al, Fe, Co, Ni, Cu, Zn, Ag, In, Sn, Pt, Au, Pb, and ITO, AZO, FTO, IZO, etc., as well as inorganic materials, in any combination of two or more.
[0026] To verify the effect of the edge clearing structure of the thin-film solar cell provided in this application on the cell's voltage and conversion efficiency, the following experimental results are presented in this embodiment.
[0027] First, a comparative model was fabricated. Specifically, the substrate (100mm*100mm) containing the FTO thin film was ultrasonically cleaned and dried sequentially using ethanol and acetone. Then, the FTO thin film was uniformly cut into 10 equal-area sections using a laser. Next, TiO2 and NiO were sequentially deposited on the FTO film using magnetron sputtering. x Layer; The perovskite solution is coated onto the annealed NiO using slot coating. x After the layer is completed, it is placed in a vacuum chamber and evacuated for 60 seconds to form a light-absorbing layer 106, which is then annealed at 150°C for 10 minutes. After the light-absorbing layer 106 has cooled and annealed, PCBM, BCP, and Ag thin film layers are deposited sequentially using vacuum thermal evaporation. After the solar cell structure is completed, a current-collecting region 1013 of a certain width is first formed at the edge of the cell using a laser at a certain energy and frequency. As a further option, the width of the buffer zone 1012 is 1μm~2000μm. Then, a current-collecting region 1013 of a certain width is formed. As a further option, the width of the current-collecting region 1013 is 1μm~1000mm.
[0028] Secondly, the cell is fabricated according to the edge-cleaning structure of the thin-film solar cell provided in this application. The specific steps of Method 1 are as follows: the substrate (100mm*100mm) containing the FTO thin film layer is ultrasonically cleaned and dried sequentially using ethanol and acetone, then the FTO thin film layer is uniformly cut into 10 equal-area regions using a laser, and then TiO2 and NiO are sequentially deposited on the FTO film layer by magnetron sputtering. x Layer; The perovskite solution is coated onto the annealed NiO using slot coating. x After the layer is completed, it is placed in a vacuum chamber and evacuated for 60 seconds to form a light-absorbing layer 106, which is then annealed at 150°C for 10 minutes. After the light-absorbing layer 106 has cooled and annealed, the PCBM, BCP, and Ag thin film layers are deposited sequentially using vacuum thermal evaporation. After the solar cell structure is completed, a 1mm wide buffer zone 1012 is created at the edge of the cell using a laser at a specific energy and frequency. Finally, the energy and frequency are set to twice the laser parameters of the buffer zone 1012, and a 20mm wide current-collecting buffer zone 1012 is created at the edge of the buffer zone 1012.
[0029] The steps of Method 2 are as follows: The substrate (100mm*100mm) containing the FTO thin film layer is ultrasonically cleaned and dried sequentially using ethanol and acetone. Then, the FTO thin film layer is uniformly cut into 10 equal-area sections using a laser. Next, TiO2 and NiO are sequentially deposited on the FTO film layer using magnetron sputtering. x Layer; The perovskite solution is coated onto the annealed NiO using slot coating. xAfter the layer is completed, it is placed in a vacuum chamber and evacuated for 60 seconds to form a light-absorbing layer 106, which is then annealed at 150°C for 10 minutes. After the light-absorbing layer 106 has cooled down, PCBM, BCP, and Ag thin film layers are deposited sequentially using vacuum thermal evaporation. After the solar cell structure is completed, a 3mm wide buffer zone 1012 is created at the edge of the cell using a laser at a specific energy and frequency. Finally, the energy and frequency are set to twice the laser parameters of the buffer zone, and a 30mm wide current-collecting area 1013 is created at the edge of the buffer zone 1012.
[0030] The specific steps of Method 3 are as follows: The substrate (100mm*100mm) containing the ITO thin film layer is ultrasonically cleaned and dried sequentially using ethanol and acetone. Then, the FTO thin film layer is uniformly cut into 10 equal-area sections using a laser. Next, a TiO2 layer is deposited on the FTO film layer using magnetron sputtering. A perovskite solution is then coated onto the annealed TiO2 layer using slot coating. After completion, the substrate is placed in a vacuum chamber and evacuated for 60 seconds to form a light-absorbing layer 106. This layer is then annealed at 150°C for 10 minutes. After the light-absorbing layer 106 has cooled, Spiro-OMeTAD is spin-coated onto the perovskite, followed by the Au thin film layer. After completing the solar cell structure, a 1mm wide buffer zone 1012 is created at the edge of the cell using a laser at a specific energy and frequency. Finally, the energy and frequency are set to twice the laser parameters of the buffer zone 1012, and a 20mm wide current-collecting region 1012 is created at the edge of the buffer zone 1012.
[0031] The steps of Method 4 are as follows: The substrate (100mm*100mm) containing the ITO thin film layer is ultrasonically cleaned and dried sequentially using ethanol and acetone. Then, the FTO thin film layer is uniformly cut into 10 equal-area sections using a laser. Next, a TiO2 layer is deposited on the FTO film layer using magnetron sputtering. A perovskite solution is then coated onto the annealed TiO2 layer using slot coating. After this, the substrate is placed in a vacuum chamber and evacuated for 60 seconds to form a light-absorbing layer 106. The substrate is then annealed at 150°C for 10 minutes. After the light-absorbing layer 106 has cooled, Spiro-OMeTAD is spin-coated onto the perovskite, followed by the Au thin film layer. After completing the solar cell structure, a 3mm wide buffer zone 1012 is created at the edge of the cell using a laser at a specific energy and frequency. Finally, the energy and frequency are set to twice the laser parameters of the buffer zone 1012, and a 30mm wide current-collecting area 1012 is created at the edge of the buffer zone 1012.
[0032] In this application, such as Figure 1As shown, the buffer zone 1012 is provided with, from bottom to top, a conductive thin film layer 102, a first barrier layer 103, a first transport layer 104, a first passivation layer 105, a light-absorbing layer 106, a second passivation layer 107, a second transport layer 108, and a second barrier layer 109. A first conductive thin film layer 1021 is provided on the current-collecting region 1013; wherein, the current-collecting region 1013 is arranged adjacent to the buffer zone 1012, and the buffer zone 1012 is arranged adjacent to the thin-film solar cell structure 1011.
[0033] Experiments show that placing the structure provided in this application under a light intensity of 1.35 × 10⁻⁶ results in optimal performance. 5 The photoelectric conversion efficiency was tested under lux conditions, and the measured data are shown in the table below:
[0034] Voc(V) <![CDATA[Jsc(mA / cm 2 )]]> FF (%) PCE (%) Comparative Example 9.13 2.31 69.25 14.59 Method 1 10.81 2.41 72.26 18.84 Method 2 10.67 2.43 72.94 18.90 Method 3 10.46 2.47 72.65 18.78 Method 4 10.52 2.44 72.38 18.58
[0035] As can be seen from the comparison table, in the comparative example, the burrs left by the direct etching method fell into the busbar area, causing internal short circuits between part of the busbar area and the battery structure, which in turn led to a decrease in voltage and conversion efficiency. The structural solution provided by this invention can effectively mitigate the impact of this situation.
[0036] As a further embodiment, the residual shapes of the first blocking layer 103, the first transmission layer 104, the first passivation layer 105, the light-absorbing layer 106, the second passivation layer 107, the second transmission layer 108, and the second blocking layer 109 may include cubes, cuboids, cylinders, cones, and spheres.
[0037] As a further option, the thickness of the conductive thin film layer 102 is 0~100μm.
[0038] As a further option, the thickness of the first barrier layer 103 and the second barrier layer 109 is 0~500nm.
[0039] As a further option, the thickness of the first transport layer 104 and the second transport layer 108 is 0~500nm.
[0040] As a further option, the thickness of the light-absorbing layer 106 is 0~3000nm.
[0041] Compared to existing technologies, the edge-clearing structure of the thin-film solar cell provided in this application includes a substrate layer 101, which is sequentially divided into a thin-film solar cell structure 1011, a buffer zone 1012, and a current-collecting region 1013. The thin-film solar cell structure includes, from bottom to top, a conductive thin film layer 102, a first barrier layer 103, a first transport layer 104, a first passivation layer 105, a light-absorbing layer 106, a second passivation layer 107, a second transport layer 108, and a second barrier layer 109. The back electrode 1010; the buffer zone 1012 is provided with a conductive thin film layer 102, a first barrier layer 103, a first transport layer 104, a first passivation layer 105, a light-absorbing layer 106, a second passivation layer 107, a second transport layer 108, and a second barrier layer 109 from bottom to top; the current-collecting region 1013 is provided with a first conductive thin film layer 1021; wherein, the current-collecting region 1013 is arranged adjacent to the buffer zone 1012 and the buffer zone 1012 is arranged adjacent to the thin film solar cell structure 1011.
[0042] This edge-clearing structure uses a buffer zone to separate the solar cell structure from the busbar area. On the one hand, it prevents the bottom conductive film layer from being punctured due to the high energy of the first laser etching, which would cause an open circuit and lead to cell failure. On the other hand, it also prevents the burrs on the top back electrode layer from falling into the busbar area due to the energy emitted by the laser in an unstable state, which would cause an internal short circuit and also lead to cell failure. It has extremely high commercial and technological value.
[0043] In the description of this application, it should be understood that the terms "center," "longitudinal," "lateral," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," and "outer," etc., indicating orientation or positional relationships based on the orientation or positional relationships shown in the accompanying drawings, are used only for the convenience of describing this application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation on this application. Furthermore, the terms "first," "second," etc., are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of indicated technical features. Thus, features defined with "first," "second," etc., may explicitly or implicitly include one or more of that feature. In the description of this application, unless otherwise stated, "a plurality of" means two or more.
[0044] Other embodiments of this application will readily occur to those skilled in the art upon consideration of the specification and practice of the application disclosed herein. This application is intended to cover any variations, uses, or adaptations of this application that follow the general principles of this application and incorporate common knowledge or customary techniques in the art disclosed herein. The specification and examples are to be considered exemplary only, and the true scope of this application is indicated by the claims.
[0045] It should be understood that this application is not limited to the precise structure described above and shown in the accompanying drawings, and various modifications and changes can be made without departing from its scope. The embodiments of this application described above do not constitute a limitation on the scope of protection of this application.
Claims
1. An edge-clearing structure for a thin-film solar cell, characterized in that, The substrate (101) is divided into a thin-film solar cell structure (1011), a buffer zone (1012), and a current collection zone (1013). The thin-film solar cell structure (1011) includes, from bottom to top, a conductive thin film layer (102), a first barrier layer (103), a first transport layer (104), a first passivation layer (105), a light-absorbing layer (106), a second passivation layer (107), a second transport layer (108), a second barrier layer (109), and a back electrode (1010). The buffer zone (1012) is provided with the conductive thin film layer (102), the first barrier layer (103), the first transmission layer (104), the first passivation layer (105), the light-absorbing layer (106), the second passivation layer (107), the second transmission layer (108), and the second barrier layer (109) from bottom to top. A first conductive thin film layer (1021) is provided on the busbar area (1013); The current collection area (1013) is arranged adjacent to the buffer zone (1012), and the buffer zone (1012) is arranged adjacent to the thin-film solar cell structure (1011).
2. The edge-clearing structure of a thin-film solar cell according to claim 1, characterized in that, The residual shapes of the first blocking layer (103), the first transmission layer (104), the first passivation layer (105), the light-absorbing layer (106), the second passivation layer (107), the second transmission layer (108), and the second blocking layer (109) may include cubes, cuboids, cylinders, cones, and spheres.
3. The edge-clearing structure of a thin-film solar cell according to claim 1, characterized in that, The width of the buffer (1012) is 1μm to 2000μm.
4. The edge-clearing structure of a thin-film solar cell according to claim 1, characterized in that, The width of the merging region (1013) is 1μm to 1000mm.
5. The edge-clearing structure of a thin-film solar cell according to claim 1, characterized in that, The thickness of the conductive thin film layer (102) is 0~100μm.
6. The edge-cleaning structure of a thin-film solar cell according to claim 5, characterized in that, The thickness of the first barrier layer (103) and the second barrier layer (109) is 0~500nm.
7. The edge-clearing structure of a thin-film solar cell according to claim 1, characterized in that, The thickness of the first transmission layer (104) and the second transmission layer (108) is 0~500nm.
8. The edge-clearing structure of a thin-film solar cell according to claim 1, characterized in that, The thickness of the light-absorbing layer is 0~3000nm.