N-type 4H-SiC key growth equipment

Abstract

The utility model discloses an N type 4H-SiC (silicon carbide) key growth device. The N-type 4H-SiC key growth equipment comprises a rack, a growth furnace body is installed on the rack, and a plurality of shockproof assemblies are arranged at the bottom of the rack; and the shockproof assembly comprises a connecting plate, the connecting plate is connected with the rack, a supporting plate is arranged below the connecting plate, a screw rod is rotationally installed at the bottom of the connecting plate, and a damping shock absorption part is installed between the screw rod and the supporting plate. According to the N-type 4H-SiC key growth equipment provided by the utility model, the shock-proof assembly comprising the connecting plate, the supporting plate, the screw rod and the damping component is arranged on the rack, so that the shock-proof effect of the equipment is improved, the shock on the rack can be weakened through the damping component when an external shock source exceeds the standard, the influence on the growth of N-type 4H-SiC is reduced, and the service life of the equipment is prolonged. And the product yield can be improved.

Description

Technical Field

[0001] This utility model relates to the field of silicon carbide crystal growth furnace technology, and in particular to a key growth equipment for N-type 4H-SiC. Background Technology

[0002] The silicon carbide crystal growth furnace is the core equipment for producing silicon carbide single crystals. Its design and technical parameters have a decisive influence on key indicators such as crystal quality, size, and conductivity. Working principle: High-purity SiC powder is heated and sublimated under high temperature and extremely low vacuum. The gaseous reactants are transported to the surface of a low-temperature seed crystal, where they condense into a single crystal with a fixed orientation lattice structure. High-quality silicon carbide crystals are grown by precisely controlling parameters such as growth temperature, gas flow, and pressure, as well as optimizing the furnace structure and control system.

[0003] As the core equipment for producing silicon carbide single crystals, the silicon carbide crystal growth furnace requires a strict operating environment. One N-type 4H-SiC silicon carbide crystal growth furnace on the market requires external vibration source control: when the frequency is greater than 10Hz, the amplitude value should be less than 0.03mm. However, apart from the requirement for external vibration sources, the equipment itself does not have good anti-vibration measures. The equipment itself is in hard contact with the ground. Once the external vibration source exceeds the standard, it may cause a decrease in the yield of products in the furnace, or even scrap the entire batch of products.

[0004] Therefore, it is necessary to provide a key growth equipment for N-type 4H-SiC to solve the above-mentioned technical problems. Utility Model Content

[0005] In view of the above situation and to overcome the defects of the existing technology, this utility model provides an N-type 4H-SiC key growth equipment that can improve the shock resistance of the equipment.

[0006] To achieve the above objectives, the technical solution adopted by this utility model is as follows:

[0007] The N-type 4H-SiC key growth equipment includes: a frame on which the growth furnace body is mounted; multiple anti-vibration components are installed at the bottom of the frame; the anti-vibration components include square connecting plates, which are bolted to the frame; a support plate is installed below the connecting plates; a screw is rotatably mounted on the bottom of the connecting plates via bearings; and a damping shock absorption component is installed between the screw and the support plate.

[0008] Preferably, the damping shock absorber includes a mounting tube fixedly installed on the top of the support plate, a damping shock absorber installed inside the mounting tube, and a threaded tube installed on the top of the damping shock absorber, the threaded tube being threadedly connected to the screw rod.

[0009] Preferably, a gasket is installed inside the mounting tube.

[0010] Preferably, four handles are mounted on the screw, and handle gloves are mounted on the handles, which can move along the axial direction of the handles.

[0011] Preferably, a rubber pad is installed at the bottom of the support plate, and the rubber pad is made of latex.

[0012] Preferably, a removable replacement plate is installed at the bottom of the support plate.

[0013] Compared with the prior art, the present invention has the following beneficial effects:

[0014] (1) This utility model improves the anti-vibration effect of the equipment by setting an anti-vibration component including a connecting plate, a support plate, a screw and a damping shock absorption component on the frame. When the external vibration source exceeds the standard, the damping shock absorption component can weaken the vibration of the frame, reduce the impact on the growth of N-type 4H-SiC, and help improve the product yield.

[0015] (2) By installing a gasket inside the installation pipe, this utility model can improve the connection stability between the threaded pipe and the installation pipe, and also improve the shock absorption effect.

[0016] (3) This utility model can push the screw conveniently and effortlessly by installing a handle on the screw and a glove on the handle;

[0017] (4) By installing rubber pads at the bottom of the support plate, this utility model can further improve the shock absorption and vibration resistance of the equipment.

[0018] (5) By installing a detachable replacement plate at the bottom of the support plate, this utility model can improve the safety of the equipment during transportation. Attached Figure Description

[0019] Figure 1 A schematic diagram of the structure of the key N-type 4H-SiC growth equipment provided by this utility model;

[0020] Figure 2 for Figure 1 The diagram shows the structure of the anti-vibration component in the N-type 4H-SiC key growth equipment.

[0021] Figure 3 for Figure 1 The diagram shows the structure of the damping and vibration reduction component in the N-type 4H-SiC key growth equipment.

[0022] The corresponding names of the attached figures are as follows: 1-Frame, 2-Anti-vibration component, 3-Growth furnace body, 4-Connecting plate, 5-Support plate, 6-Screw, 7-Damping shock absorber, 8-Mounting pipe, 9-Threaded pipe, 10-Damping shock absorber, 11-Washer, 12-Handle, 13-Glove, 14-Rubber pad, 15-Replacement plate, 16-Connector. Detailed Implementation

[0023] The present invention will be further described below with reference to the accompanying drawings and embodiments. The embodiments of the present invention include, but are not limited to, the following embodiments.

[0024] Example 1:

[0025] like Figure 1-3 As shown, the key growth equipment for N-type 4H-SiC provided by this utility model includes: a frame 1, on which a growth furnace body 3 for N-type 4H-SiC is mounted, along with other necessary components, which will not be described in detail here. Multiple anti-vibration components 2 are provided at the bottom of the frame 1. Each anti-vibration component 2 includes a square connecting plate 4, which is bolted to the frame 1. A support plate 5 is provided below the connecting plate 4. A screw 6 is rotatably mounted on the bottom of the connecting plate 4 via a bearing. A damping and shock-absorbing component 7 is installed between the screw 6 and the support plate 5. The damping and shock-absorbing component 7 includes a fixed mounting... A damping shock absorber 10 is installed inside the mounting tube 8 at the top of the support plate 5. A threaded tube 9 is installed on the top of the damping shock absorber 10, and the threaded tube 9 is threadedly connected to the screw 6. When in use, the equipment is placed on the ground, the support plate 5 is held still, and the screw 6 is rotated to ensure that the bottom of the support plate 5 is fully grounded. When encountering significant vibration, the damping shock absorber 10 weakens the vibration, reducing the vibration experienced by the frame 1 and improving the overall shock resistance of the equipment. This, in turn, reduces the impact on the growth of N-type 4H-SiC in the growth furnace body 3, which is beneficial to improving the product yield.

[0026] By installing a shock-absorbing assembly 2 on the frame 1, including a connecting plate 4, a support plate 5, a screw 6, and a damping and vibration-damping component 7, the shock resistance of the equipment is improved. When the external vibration source exceeds the standard, the damping and vibration-damping component 7 can weaken the vibration received by the frame 1, reduce the impact on the growth of N-type 4H-SiC, and help improve the product yield.

[0027] Example 2:

[0028] like Figure 3 As shown, a washer 11 is installed inside the mounting tube 8. When in use, the rubber washer 11 contacts the threaded tube 9, which can make the connection between the threaded tube 9 and the mounting tube 8 more stable. Lateral vibration can also be weakened by the washer 11, which helps to improve the vibration reduction effect of the equipment.

[0029] By installing a washer 11 inside the mounting pipe 8, the connection stability between the threaded pipe 9 and the mounting pipe 8 can be improved, and the shock absorption effect can also be improved.

[0030] Example 3:

[0031] like Figure 2-3As shown, four handles 12 are installed on the screw 6, and handle gloves 13 are installed on the handles 12. The handle gloves 13 can move along the axis of the handles 12. When in use, pull the handle gloves 13 away from the screw 6, grasp the handle gloves 13 and push the handles 12 to rotate, thereby rotating the screw 6. No other tools are needed. Due to the increased torque, rotating the screw 6 is more effortless and convenient. After use, push the handle gloves 13 inward to return it to its original position.

[0032] By installing a handle 12 on the screw 6 and a handle glove 13 on the handle 12, the screw 6 can be pushed conveniently and effortlessly.

[0033] Example 4:

[0034] like Figure 2 As shown, a rubber pad 14 is installed at the bottom of the support plate 5. The rubber pad 14 is made of latex and has a better shock absorption and anti-slip effect. When in use, the vibration is damped by the rubber pad 14 at the bottom of the support plate 5, which further improves the shock absorption and vibration resistance of the equipment.

[0035] By installing rubber pads 14 at the bottom of the support plate 5, the vibration reduction and shock resistance of the equipment can be further improved.

[0036] Example 5:

[0037] like Figure 2 As shown, a threaded groove is opened at the bottom of the support plate 5, and a connector 16 is threaded into the groove. A replacement plate 15 is fixedly installed at the bottom of the connector 16. During equipment transportation, the replacement plate 15 is installed at the bottom of the support plate 5 through the connector 16, so that the replacement plate 15 supports the equipment during transportation. After the equipment is transported to the installation site, the replacement plate 15 and the connector 16 are removed from the bottom of the support plate 5, so that the support plate 5 is grounded and installed, thereby preventing the bottom of the support plate 5 from being worn or even damaged during transportation, thus improving the safety of the equipment during transportation.

[0038] By installing a removable replacement plate 15 at the bottom of the support plate 5, the safety of the equipment during transportation can be improved.

[0039] Working principle: When in use, place the equipment on the ground, hold the support plate 5 still, and rotate the screw 6 to make the bottom of the support plate 5 fully grounded. When encountering vibration, the damping shock absorber 10 weakens the vibration, reduces the vibration of the frame 1, improves the overall shock resistance of the equipment, and reduces the impact on the growth of N-type 4H-SiC in the growth furnace body 3, which is conducive to improving the product yield.

Claims

1. An N-type 4H-SiC key growth apparatus, characterized by, Include: Frame (1), the frame (1) is installed with growth furnace body (3), the bottom of frame (1) is provided with multiple shockproof components (2); The shockproof component (2) includes a connecting plate (4) connected with the frame (1), a support plate (5) is arranged below the connecting plate (4), a screw rod (6) is rotatably installed at the bottom of the connecting plate (4), and a damping shock absorbing component (7) is installed between the screw rod (6) and the support plate (5).

2. The N-type 4H-SiC key growth equipment according to claim 1, characterized in that, The damping shock absorbing component (7) includes a mounting pipe (8) fixedly installed on the top of the support plate (5), a damping shock absorber (10) is installed in the mounting pipe (8), a threaded pipe (9) is installed on the top of the damping shock absorber (10), and the threaded pipe (9) is screwed with the screw rod (6).

3. The N-type 4H-SiC key growth equipment according to claim 2, characterized in that, The mounting pipe (8) is provided with a gasket (11) installed therein.

4. The N-type 4H-SiC key growth equipment according to claim 1, characterized in that, Four handles (12) are installed on the screw rod (6), and handle sleeves (13) are installed on the handles (12).

5. The N-type 4H-SiC key growth equipment according to claim 1, characterized in that, A rubber pad (14) is installed at the bottom of the support plate (5).

6. The N-type 4H-SiC key growth equipment according to claim 1, characterized in that, A detachable replacement plate (15) is installed at the bottom of the support plate (5).

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